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WO1999066099A1 - Materiau cible pour projection - Google Patents

Materiau cible pour projection Download PDF

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Publication number
WO1999066099A1
WO1999066099A1 PCT/JP1999/003194 JP9903194W WO9966099A1 WO 1999066099 A1 WO1999066099 A1 WO 1999066099A1 JP 9903194 W JP9903194 W JP 9903194W WO 9966099 A1 WO9966099 A1 WO 9966099A1
Authority
WO
WIPO (PCT)
Prior art keywords
target material
sputtering
noble metal
plane
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1999/003194
Other languages
English (en)
Japanese (ja)
Inventor
Noriaki Hara
Somei Yarita
Ken Hagiwara
Ritsuya Matsuzaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Priority to DE19981314T priority Critical patent/DE19981314C2/de
Priority to KR1020007000075A priority patent/KR100348023B1/ko
Priority to JP53819599A priority patent/JP3436763B2/ja
Priority to GB0001523A priority patent/GB2343684B/en
Priority to TW088115093A priority patent/TW491909B/zh
Publication of WO1999066099A1 publication Critical patent/WO1999066099A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B11/00—Obtaining noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
    • C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals

Definitions

  • the present invention relates to a sputtering target material.
  • it relates to sputtered evening gate materials made of precious metals.
  • These precious metal thin films are mainly manufactured by a sputtering method, which is one of the physical vapor deposition methods.
  • a sputtering method which is one of the physical vapor deposition methods.
  • the purity of the sputtering material, the structure of the target material and the like greatly affect the characteristics of the formed thin film.
  • the characteristics such as specific resistance that are practically required for the thin film electrode can be determined simply by controlling the purity of the sputtering target material.
  • a sufficiently satisfactory spattering material manufactured by the conventional melting method or powder metallurgy method has been obtained.
  • hot forming is generally performed under hydrostatic pressure using the HIP method, but voids may remain between particles. May be trapped. Once this trapped gas flows out, it affects the degree of vacuum required during sputtering and deteriorates the film properties. There is.
  • an object of the present invention is to solve the conventional problems as described above, so that fine cluster-like lumps are not lost, good thin film characteristics can be obtained, and internal defects are extremely small.
  • An object of the present invention is to provide a high-purity noble metal sputtering target material for sputtering.
  • the present inventors have thought that the metallographic structure of the sputtering target material must be considered in order to prevent the conventional problem of the loss of fine cluster-like lump, and completed the present invention. than it was led to the c Therefore, in describing the present invention, the mechanism of loss of conventional dissolving ⁇ method or fine class evening one like mass of sputtered produced evening by powder metallurgy from Ge' preparative material How you think is very important.
  • FIG. 2 schematically shows a cross-sectional structure observed in a sputtering target material manufactured by a melting method.
  • the sputtering rate depends on the plane orientation of the crystal appearing on the surface and the sputter ion type. different. In other words, in the conventional sputtering target material having various crystal planes on the surface, the sputter rate differs for each crystal plane so that the existence of a preferential sputtering plane is affirmed. Crystals with a low sputter rate coexist.
  • the surface layer of the sputtering target material which is sputtered, is hardened by the implantation of sputter ions, and the thinned grains that are eroded by the sputter ring become grain boundaries that are hardened by work hardening. Along the surface, and then fall off from the surface of the sputtering target material to the thin film formation surface. That is, it can be said that the above-mentioned fine cluster-like lump is one in which the crystal grain itself has peeled and dropped.
  • the crystal structure of the noble metal target material for sputtering according to the present invention is changed to a columnar structure.
  • the sputtering target material is a sputtering target material made of a noble metal and characterized by having a columnar crystal structure grown in the normal direction to the sputtering surface. .
  • the sputtering target material having a columnar structure grown in the normal direction to the sputtering surface has a continuous crystal structure in the thickness direction, and the crystal structure schematically shown in Fig. 1. It is. Therefore, when the structure has a discontinuous structure in the thickness direction shown in FIG. 2, the problem of the conventional sputtering target material, that is, the falling off of fine crystal grains, is extremely unlikely to occur.
  • the columnar structure can be said to be an organization that grew with a preferred orientation in the growth process. Therefore, by making the crystal structure of the material a columnar structure, it is possible to give a certain level of directivity to the crystal orientation of each crystal constituting the material. This makes it possible to align the crystal orientations of the surface of the sputtering target material and to minimize the consumption of the microscopically non-uniform sputtering target material.
  • the noble metal sputtering target material according to the present invention is characterized by having a crystal structure including columnar crystals grown in the normal direction to the sputtering surface, thereby providing a fine cluster-like structure. It can be a noble metal thin film source having good characteristics without generating a lump.
  • the sputtering target material composed of columnar crystals as in the present invention those for other metal species such as titanium are well known.
  • the sputtering target material such as titanium for example, By controlling the heat flow in the post-solidification process in one direction (unidirectional solidification) There is one configured using columnar crystals to be manufactured.
  • the present inventors conducted further research in order to obtain a target material composed of columnar crystals of the noble metal, and as a result, they found that the crystal structure containing the columnar crystals contained the noble metal salt. It is a sputtering target material composed of columnar crystals electrolytically deposited from the contained solution.
  • the columnar crystals electrolytically precipitated from the solution containing the noble metal salt can be precipitated at a relatively low temperature while having a slow deposition rate.
  • the process management is simple and the production efficiency is good, so there is an advantage that it is inexpensive compared to conventional precious metal evening-get materials.
  • columnar crystals formed by electrolytic deposition are high-purity crystals with a low impurity content, because they are produced by separation and deposition using a deposition potential difference peculiar to the electrolytic method. Therefore, the target material according to the present invention also has a feature of high purity with very few internal defects.
  • the target material of the present invention is also required.
  • the solution containing a noble metal only an aqueous solution containing a noble metal salt is used.
  • it also includes a mixed salt in a molten state in which a noble metal salt is mixed.
  • a sunset material comprising columnar crystals precipitated from the mixed molten salt is preferable from the viewpoint of purity and directivity of the crystal plane. This is because the use of molten salt electrolysis among electrolysis makes it easy to adjust the composition of the molten salt used as the electrolytic solution, and also makes it possible to more effectively use the difference in deposition potential with impurities. It can be separated and precipitated.
  • the molten salt electrolysis can directly obtain a precious metal sunset material having a desired shape in a relatively short time as compared with the case of precipitating a noble metal from a noble metal aqueous solution, and by appropriately changing the electrolysis conditions,
  • the structure of precipitates can be controlled, and it can be used as a sputtering target material with a developed columnar structure.
  • iridium, ruthenium, platinum, gold, palladium, rhodium, osmium, and rhenium are considered as the noble metal used in the sputtering target material of the present invention.
  • platinum, ruthenium, and iridium are significantly inferior in physical workability to gold, which is the same noble metal, and cannot be rolled or forged in practice.
  • manufacturing methods other than metallurgical methods is accompanied by significant restrictions.
  • FIG. 1 is a schematic diagram of a cross-sectional crystal structure of a sputtering target material having a columnar crystal structure
  • FIG. 2 is a schematic diagram of a cross-sectional crystal structure of a sputtering target material obtained by a melting method. is there.
  • FIG. 3 is a schematic structural diagram of a molten salt electrolysis apparatus.
  • FIG. 4 is a cross-sectional crystal structure of a ruthenium target material for sputtering according to the present invention, which is a crystal grain structure observed by an optical microscope.
  • FIG. 5 is a graph showing a grain structure of a sputtering target material according to the present invention. This is the grain structure of the crystals observed under an optical microscope as a cross-sectional crystal structure.
  • FIG. 6 shows a ruthenium substrate for sputtering according to the present invention. This is the surface particle structure visually observed on the spattered surface after the spattering of the wood material.
  • Figure 7 shows the surface particle structure of the sputtering target of the sputtering target manufactured by the melting method, which was visually observed after the sputtering.
  • FIG. 8 (a) shows the surface crystal structure of the ruthenium sputtering target material for sputtering according to the present invention by SEM observation of the sputtering ring surface after the completion of the sputtering
  • FIG. 8 (b) This is the profile of the surface roughness of the sputtering surface after the end of sputtering
  • Fig. 9 (a) shows the surface crystallographic structure of the sputtered surface of the ruthenium target material for sputtering obtained by the melt-casting method after SPM, which was observed by SEM. This is a profile of the surface roughness of the sputtering surface after completion.
  • a noble metal target material was manufactured by electrolyzing an aqueous solution containing platinum.
  • An aqueous solution having the following composition was used as a platinum solution serving as an electrolytic bath.
  • a copper disc (diameter: 13 Omm) was used as the force sword for depositing platinum.
  • the force sword was subjected to electrolytic degreasing, acid activation treatment, platinum strike plating, and then immersed in the above aqueous solution for electrolysis.
  • the electrolysis was performed with a bath temperature of 95 :, a power source current density of 3 AZdm 2 , and an electrolysis time of 125 hours. And the molten salt electrolysis As a result, platinum having a thickness of 3 mm was obtained.
  • the cathode to which the electrolytic platinum had adhered was used as a platinum-plated material for sputtering, which was a disc-shaped platinum plate, by dissolving the underlying copper plate.
  • X-ray diffraction analysis of the crystal structure of the platinum target material showed that the integrated intensity of the (200) plane was particularly stronger than that of the other crystal planes.
  • Second Embodiment Next, a mixed molten salt was used as a precious metal solution to be precipitated, and a molten salt electrolysis apparatus 1 was used to produce a evening target material.
  • the molten salt electrolysis apparatus 1 includes a cylindrical container 2 having an open top, a flange 3 having an electrode inlet serving as a lid of the cylindrical container, a graphite electrolytic cell 4, It is provided with a preliminary exhaust chamber 5 for loading or unloading a plating object, and a rotating means 6 for the plating object.
  • a ruthenium plate was used for the anode 7 located inside the electrolytic cell 4 made of graphite.
  • the anode 7 is laid so as to be in contact with the bottom of the graphite electrolytic cell 4, and current is supplied through the graphite electrolytic cell 4. Electrolysis was performed.
  • the composition of the mixed molten salt used here was as shown in Table 2. Table 2
  • Potassium ruthenate chloride 765.1 The electrolysis conditions were a bath temperature of 520 ° C., a power source current density of 2 AZ dm 2 , and an electrolysis time of 150 hours. As a result of performing molten salt electrolysis under these conditions, electrolytic ruthenium having a thickness of 3 mm was obtained. The electrolytic ruthenium was washed with hydrochloric acid or sulfuric acid or the like and peeled off from the graphite electrode to obtain a disc-shaped ruthenium plate, a ruthenium sputtering target material for sputtering.
  • the ruthenium sputtering target material for sputtering was bonded to a 3 mm-thick copper plate to obtain a ruthenium sputtering target for sputtering.
  • a columnar crystal structure as shown in FIG. 4 was obtained.
  • the integrated intensity of the (1 1 2) plane was particularly stronger than that of the other crystal planes.
  • the integrated intensity ratio between the (111) plane and the other crystal plane is higher than that obtained when analyzing a ruthenium sample in a powder state, and the sunset material according to the present embodiment is (111). 2) It was found that the texture was strongly oriented on the surface. The presence or absence of internal defects was examined by an X-ray transmission test, but no internal defects were detected.
  • a ruthenium target was manufactured by changing the electrolysis conditions using the mixed molten salt shown in Table 2 and the apparatus shown in FIG. 1 used in the second embodiment. Therefore, since the basic embodiment is the same as the first embodiment, the duplicate description is omitted and only the electrolysis conditions are described.
  • the electrolysis conditions here were a bath temperature of 560 ° C., a power source current density of 3 AZ dm 2 , and an electrolysis time of 100 hours. As a result of performing molten salt electrolysis under these conditions, electrolytic ruthenium having a thickness of 3 mm was obtained.
  • the (001) plane shows the same tendency as in the first embodiment.
  • the microstructure was found to be strongly oriented on the (001) plane.
  • the presence or absence of internal defects was examined by an X-ray transmission test, but no internal defects were detected.
  • the ruthenium targets manufactured in the first and second embodiments described above. Sputtering was actually performed using a pit. At this time, the sputter ring adopted a roof sputter ring type, and the ruthenium target was placed above the thin film forming substrate. A test with N 100 was performed, but none of the crystal grains itself peeled off and affected the thin film performance.
  • an iridium target material is manufactured using the molten salt electrolysis apparatus 1 shown in FIG. 3 similar to the first and second embodiments.
  • the composition of the mixed molten salt used here was as shown in Table 3. Table 3
  • the electrolysis conditions were a bath temperature of 520 ° C., a power source current density of 2 AZ dm 2 , and an electrolysis time of 150 hours.
  • electrolytic iridium having a thickness of 3 mm was obtained.
  • the electrolytic iridium was pickled with hydrochloric acid or sulfuric acid or the like, and peeled off from the graphite electrode to obtain an iridium target material for sputtering, which is a disk-shaped iridium plate.
  • the iridium target material for sputtering and a 3 mm-thick copper plate were bonded to form a sputtering iridium target.
  • a columnar crystal structure as shown in FIG. 5 was obtained.
  • the (220) plane had the same inclination as in the first embodiment, indicating that the structure was strongly oriented to the (2200) plane.
  • the presence or absence of internal defects was examined by an X-ray transmission test, but no internal defects were detected.
  • sputtering was actually performed using this iridium target. At this time, the sputtering was of the roof sputtering type, and the iridium target was disposed above the thin film forming substrate.
  • a ruthenium target material was formed into a thin film by roof sputtering using a ruthenium target material for sputtering manufactured by a melting method.
  • a comparative test was performed with the substrate placed above the substrate. As a result of the N2100 test, there were two points that seemed to have caused the crystal grains themselves to peel off and affect the thin film performance. Although not a very serious defect, there was a change in the electrical resistance.
  • the sputtering surfaces of the ruthenium target material of the first embodiment and the ruthenium target material manufactured by the above-described melting method were observed.
  • the ruthenium target material produced by the molten salt electrolysis shown in FIG. 6 can be more easily compared with the ruthenium target material of the first embodiment shown in FIG. It can be seen that the erosion is uniform and the surface roughness is small compared to the material.
  • the results of observing this surface by SEM are shown in FIGS. 8 (a) and 9 (a), and the profiles obtained by the surface roughness meter are shown in FIGS. 8 (b) and 9 (b).
  • the sputtered surface of the ruthenium target material of the first embodiment shown in FIG. 7 has a uniform unevenness with less unevenness than the sputtered surface of the ruthenium target material manufactured by the melting method shown in FIG. It will be qualitatively clear that it will be a ring surface. Therefore, the sputtering target material having columnar crystal grains obtained by the molten salt electrolysis method plays a very effective role in enabling stable operation. You. Industrial applicability
  • the precious metal evening gate material for sputtering according to the present invention has a feature that the crystal structure is a columnar structure and the crystal orientation of the material surface is substantially constant. Due to this feature, there is an effect that a crystal film having excellent properties can be produced without crystal particles falling off in the sputtering process.
  • the sputtering target material according to the present invention it is possible to improve the yield and the reliability of product quality in the semiconductor industry.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Cette cible pour projection comprend un métal noble, qui se caractérise par une texture cristalline en colonne dont la croissance s'effectue dans la direction normale à un plan de projection. Cette cible est conçue pour éviter le problème du ciblage manqué d'un mince bloc dans une forme en grappe, ce problème risquant d'apparaître dans une cible pour projection que l'on obtient au moyen du procédé de coulage par dissolution ou au moyen d'un procédé utilisant la métallurgie des poudres. Cette cible peut servir à produire un mince film ayant de bonnes propriétés et elle constitue en outre une cible à base de métal noble de pureté élevée pour projection ayant peu de défauts internes.
PCT/JP1999/003194 1998-06-17 1999-06-16 Materiau cible pour projection Ceased WO1999066099A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19981314T DE19981314C2 (de) 1998-06-17 1999-06-16 Sputtertargetmaterial
KR1020007000075A KR100348023B1 (ko) 1998-06-17 1999-06-16 스퍼터링 타겟재
JP53819599A JP3436763B2 (ja) 1998-06-17 1999-06-16 スパッタリングターゲット材
GB0001523A GB2343684B (en) 1998-06-17 1999-06-16 Sputtering target material
TW088115093A TW491909B (en) 1998-06-17 1999-09-02 Sputtering target material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18571398 1998-06-17
JP10/185713 1998-06-17

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US09463967 A-371-Of-International 2000-02-11
US10/092,465 Continuation-In-Part US6875324B2 (en) 1998-06-17 2002-03-08 Sputtering target material

Publications (1)

Publication Number Publication Date
WO1999066099A1 true WO1999066099A1 (fr) 1999-12-23

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Application Number Title Priority Date Filing Date
PCT/JP1999/003194 Ceased WO1999066099A1 (fr) 1998-06-17 1999-06-16 Materiau cible pour projection

Country Status (6)

Country Link
JP (1) JP3436763B2 (fr)
KR (1) KR100348023B1 (fr)
DE (1) DE19981314C2 (fr)
GB (1) GB2343684B (fr)
TW (1) TW491909B (fr)
WO (1) WO1999066099A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012108074A1 (fr) * 2011-02-09 2012-08-16 Jx日鉱日石金属株式会社 Cible à base d'indium et son procédé de production

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Publication number Priority date Publication date Assignee Title
JP3706128B2 (ja) * 2003-06-27 2005-10-12 株式会社レノメディクス研究所 治療用自己細胞の配送支援システム及びその方法
EP1724364B1 (fr) * 2004-03-01 2014-01-22 JX Nippon Mining & Metals Corporation Procédure de fabrication d'une poudre Ruthenium de grande pureté et une cible de pulvérisation de celui-ci.
KR100841418B1 (ko) * 2006-11-29 2008-06-25 희성금속 주식회사 방전플라즈마 소결법을 이용한 귀금속 타겟 제조

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US4274926A (en) * 1979-04-12 1981-06-23 Degussa Aktiengesellschaft Process for the electrolytic deposition of silver and silver alloy coatings and compositions therefore
EP0286175A1 (fr) * 1987-04-01 1988-10-12 Shell Internationale Researchmaatschappij B.V. Procédé de production électrolytique de métaux
JPH04333587A (ja) * 1990-06-29 1992-11-20 Electroplating Eng Of Japan Co 白金電鋳浴
JPH07332494A (ja) * 1994-06-01 1995-12-22 Honda Motor Co Ltd 高強度無機質皮膜
JPH0867974A (ja) * 1994-08-26 1996-03-12 Mitsubishi Materials Corp Ｐｔ薄膜形成用スパッタリングターゲット
JPH08250427A (ja) * 1995-03-13 1996-09-27 Central Glass Co Ltd 半導体用タングステンターゲット
JPH0941131A (ja) * 1995-07-31 1997-02-10 Mitsubishi Materials Corp 高純度ＩｒまたはＲｕスパッタリングターゲットの製造方法
JPH11158612A (ja) * 1997-12-01 1999-06-15 Mitsubishi Materials Corp 溶解ルテニウムスパッタリングターゲット

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CA1250155A (fr) * 1984-07-31 1989-02-21 James A. Ruf Thermometre a resistance faite de platine
JPS63262461A (ja) * 1987-04-21 1988-10-28 Mitsubishi Kasei Corp スパツタリングタ−ゲツト

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4274926A (en) * 1979-04-12 1981-06-23 Degussa Aktiengesellschaft Process for the electrolytic deposition of silver and silver alloy coatings and compositions therefore
EP0286175A1 (fr) * 1987-04-01 1988-10-12 Shell Internationale Researchmaatschappij B.V. Procédé de production électrolytique de métaux
JPH04333587A (ja) * 1990-06-29 1992-11-20 Electroplating Eng Of Japan Co 白金電鋳浴
JPH07332494A (ja) * 1994-06-01 1995-12-22 Honda Motor Co Ltd 高強度無機質皮膜
JPH0867974A (ja) * 1994-08-26 1996-03-12 Mitsubishi Materials Corp Ｐｔ薄膜形成用スパッタリングターゲット
JPH08250427A (ja) * 1995-03-13 1996-09-27 Central Glass Co Ltd 半導体用タングステンターゲット
JPH0941131A (ja) * 1995-07-31 1997-02-10 Mitsubishi Materials Corp 高純度ＩｒまたはＲｕスパッタリングターゲットの製造方法
JPH11158612A (ja) * 1997-12-01 1999-06-15 Mitsubishi Materials Corp 溶解ルテニウムスパッタリングターゲット

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012108074A1 (fr) * 2011-02-09 2012-08-16 Jx日鉱日石金属株式会社 Cible à base d'indium et son procédé de production
JP2012162792A (ja) * 2011-02-09 2012-08-30 Jx Nippon Mining & Metals Corp インジウムターゲット及びその製造方法

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KR100348023B1 (ko) 2002-08-07
DE19981314T1 (de) 2002-10-24
GB2343684B (en) 2003-04-23
KR20010021519A (ko) 2001-03-15
DE19981314C2 (de) 2003-07-03
TW491909B (en) 2002-06-21

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