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DE19981314T1 - Sputtertargetmaterial - Google Patents

Sputtertargetmaterial

Info

Publication number
DE19981314T1
DE19981314T1 DE19981314T DE19981314T DE19981314T1 DE 19981314 T1 DE19981314 T1 DE 19981314T1 DE 19981314 T DE19981314 T DE 19981314T DE 19981314 T DE19981314 T DE 19981314T DE 19981314 T1 DE19981314 T1 DE 19981314T1
Authority
DE
Germany
Prior art keywords
sputter target
sputter
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19981314T
Other languages
English (en)
Other versions
DE19981314C2 (de
Inventor
Noriaki Hara
Somei Yarita
Ken Hagiwara
Ritsuya Matsuzaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Publication of DE19981314T1 publication Critical patent/DE19981314T1/de
Application granted granted Critical
Publication of DE19981314C2 publication Critical patent/DE19981314C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B11/00—Obtaining noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
    • C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
DE19981314T 1998-06-17 1999-06-16 Sputtertargetmaterial Expired - Fee Related DE19981314C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18571398 1998-06-17
PCT/JP1999/003194 WO1999066099A1 (en) 1998-06-17 1999-06-16 Target material for spattering

Publications (2)

Publication Number Publication Date
DE19981314T1 true DE19981314T1 (de) 2002-10-24
DE19981314C2 DE19981314C2 (de) 2003-07-03

Family

ID=16175558

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19981314T Expired - Fee Related DE19981314C2 (de) 1998-06-17 1999-06-16 Sputtertargetmaterial

Country Status (6)

Country Link
JP (1) JP3436763B2 (de)
KR (1) KR100348023B1 (de)
DE (1) DE19981314C2 (de)
GB (1) GB2343684B (de)
TW (1) TW491909B (de)
WO (1) WO1999066099A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1640898A4 (de) * 2003-06-27 2011-01-12 Nc Medical Res Inc Selbstzellenablieferungs-unterstützungssystem für die medizinische versorgung, selbstzellen-ablieferungs-unterstützungs-finanzsystem für die medizinische versorgung und verfahren dafür
KR100881851B1 (ko) * 2004-03-01 2009-02-06 닛코킨조쿠 가부시키가이샤 고순도 루테니움 분말, 이 고순도 루테니움 분말을소결하여 얻는 스퍼터링 타겟트 및 이 타겟트를 스퍼터링하여 얻은 박막 및 고순도 루테니움 분말의 제조방법
KR100841418B1 (ko) * 2006-11-29 2008-06-25 희성금속 주식회사 방전플라즈마 소결법을 이용한 귀금속 타겟 제조
JP5086452B2 (ja) * 2011-02-09 2012-11-28 Ｊｘ日鉱日石金属株式会社 インジウムターゲット及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2914880A1 (de) * 1979-04-12 1980-10-30 Degussa Verfahren zur elektrolytischen abscheidung von silber- und silberlegierungsschichten
CA1250155A (en) * 1984-07-31 1989-02-21 James A. Ruf Platinum resistance thermometer
GB8707782D0 (en) * 1987-04-01 1987-05-07 Shell Int Research Electrolytic production of metals
JPS63262461A (ja) * 1987-04-21 1988-10-28 Mitsubishi Kasei Corp スパツタリングタ−ゲツト
JP2577832B2 (ja) * 1990-06-29 1997-02-05 日本エレクトロプレイテイング・エンジニヤース株式会社 白金電鋳浴
JP3311151B2 (ja) * 1994-06-01 2002-08-05 本田技研工業株式会社 高強度無機質皮膜
JP3246223B2 (ja) * 1994-08-26 2002-01-15 三菱マテリアル株式会社 Ｐｔ薄膜形成用スパッタリングターゲット
JP3112804B2 (ja) * 1995-03-13 2000-11-27 セントラル硝子株式会社 半導体用タングステンターゲット
JPH0941131A (ja) * 1995-07-31 1997-02-10 Mitsubishi Materials Corp 高純度ＩｒまたはＲｕスパッタリングターゲットの製造方法
JPH11158612A (ja) * 1997-12-01 1999-06-15 Mitsubishi Materials Corp 溶解ルテニウムスパッタリングターゲット

Also Published As

Publication number Publication date
JP3436763B2 (ja) 2003-08-18
GB2343684B (en) 2003-04-23
KR20010021519A (ko) 2001-03-15
GB0001523D0 (en) 2000-03-15
WO1999066099A1 (en) 1999-12-23
KR100348023B1 (ko) 2002-08-07
DE19981314C2 (de) 2003-07-03
GB2343684A (en) 2000-05-17
TW491909B (en) 2002-06-21

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8607 Notification of search results after publication
8304 Grant after examination procedure
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee