[go: up one dir, main page]

DE19981314T1 - sputter target - Google Patents

sputter target

Info

Publication number
DE19981314T1
DE19981314T1 DE19981314T DE19981314T DE19981314T1 DE 19981314 T1 DE19981314 T1 DE 19981314T1 DE 19981314 T DE19981314 T DE 19981314T DE 19981314 T DE19981314 T DE 19981314T DE 19981314 T1 DE19981314 T1 DE 19981314T1
Authority
DE
Germany
Prior art keywords
sputter target
sputter
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19981314T
Other languages
German (de)
Other versions
DE19981314C2 (en
Inventor
Noriaki Hara
Somei Yarita
Ken Hagiwara
Ritsuya Matsuzaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Publication of DE19981314T1 publication Critical patent/DE19981314T1/en
Application granted granted Critical
Publication of DE19981314C2 publication Critical patent/DE19981314C2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B11/00—Obtaining noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
    • C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
DE19981314T 1998-06-17 1999-06-16 sputter target Expired - Fee Related DE19981314C2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18571398 1998-06-17
PCT/JP1999/003194 WO1999066099A1 (en) 1998-06-17 1999-06-16 Target material for spattering

Publications (2)

Publication Number Publication Date
DE19981314T1 true DE19981314T1 (en) 2002-10-24
DE19981314C2 DE19981314C2 (en) 2003-07-03

Family

ID=16175558

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19981314T Expired - Fee Related DE19981314C2 (en) 1998-06-17 1999-06-16 sputter target

Country Status (6)

Country Link
JP (1) JP3436763B2 (en)
KR (1) KR100348023B1 (en)
DE (1) DE19981314C2 (en)
GB (1) GB2343684B (en)
TW (1) TW491909B (en)
WO (1) WO1999066099A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1640898A4 (en) * 2003-06-27 2011-01-12 Nc Medical Res Inc INTRINSIC CELL DELIVERY SYSTEM FOR MEDICAL CARE, FINANCIAL SYSTEM FOR ASSISTANCE IN DELIVERY OF INTRINSIC CELLS FOR MEDICAL CARE, AND CORRESPONDING METHODS
KR100881851B1 (en) * 2004-03-01 2009-02-06 닛코킨조쿠 가부시키가이샤 High purity ruthenium powder, sputtering target obtained by sintering this high purity ruthenium powder, thin film obtained by sputtering this target, and manufacturing method of high purity ruthenium powder
KR100841418B1 (en) * 2006-11-29 2008-06-25 희성금속 주식회사 Preparation of Precious Metal Targets by Discharge Plasma Sintering
JP5086452B2 (en) * 2011-02-09 2012-11-28 Ｊｘ日鉱日石金属株式会社 Indium target and manufacturing method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2914880A1 (en) * 1979-04-12 1980-10-30 Degussa METHOD FOR ELECTROLYTICALLY DEPOSITING SILVER AND SILVER ALLOY LAYERS
CA1250155A (en) * 1984-07-31 1989-02-21 James A. Ruf Platinum resistance thermometer
GB8707782D0 (en) * 1987-04-01 1987-05-07 Shell Int Research Electrolytic production of metals
JPS63262461A (en) * 1987-04-21 1988-10-28 Mitsubishi Kasei Corp sputtering target
JP2577832B2 (en) * 1990-06-29 1997-02-05 日本エレクトロプレイテイング・エンジニヤース株式会社 Platinum electroforming bath
JP3311151B2 (en) * 1994-06-01 2002-08-05 本田技研工業株式会社 High strength inorganic coating
JP3246223B2 (en) * 1994-08-26 2002-01-15 三菱マテリアル株式会社 Sputtering target for Pt thin film formation
JP3112804B2 (en) * 1995-03-13 2000-11-27 セントラル硝子株式会社 Tungsten target for semiconductor
JPH0941131A (en) * 1995-07-31 1997-02-10 Mitsubishi Materials Corp Method for producing high-purity Ir or Ru sputtering target
JPH11158612A (en) * 1997-12-01 1999-06-15 Mitsubishi Materials Corp Dissolved ruthenium sputtering target

Also Published As

Publication number Publication date
JP3436763B2 (en) 2003-08-18
GB2343684B (en) 2003-04-23
KR20010021519A (en) 2001-03-15
GB0001523D0 (en) 2000-03-15
WO1999066099A1 (en) 1999-12-23
KR100348023B1 (en) 2002-08-07
DE19981314C2 (en) 2003-07-03
GB2343684A (en) 2000-05-17
TW491909B (en) 2002-06-21

Similar Documents

Publication Publication Date Title
DE69926634D1 (en) PROFILED SPUTTER TARGET
DE69738612D1 (en) sputtering Target
DE69941995D1 (en) radar
DE59703982D1 (en) Target arrangement
NO20003791D0 (en) projectile
DE19881914D2 (en) Magnetron sputter source
DE69928735D1 (en) Holographic radar
DE69902422D1 (en) Improved ion beam sputtering system
DK1128729T3 (en) Herbicide composition
DE60235008D1 (en) RINGFUL SPUTTER TARGET
DE10196963T1 (en) Magnetron sputtering
DE69905161D1 (en) TRACKING SYSTEM
DE60042583D1 (en) sputtering Target
DE59908391D1 (en) radar sensor
DE69942875D1 (en) ATTACK
PT1047665E (en) MATRIX METALOPROTEASE INHIBITORS
DE59913732D1 (en) missile
ATA92598A (en) GUN
DE69940419D1 (en) actuator
FI980153L (en) Actuator
DE69913027D1 (en) Evaporator
IS5783A (en) Propionibacterium gene ferry
DE59809710D1 (en) sputter cathode
ID27476A (en) MAGNETRON
DE19981314T1 (en) sputter target

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8607 Notification of search results after publication
8304 Grant after examination procedure
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee