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WO1997020320A1 - Dispositif integre de façon monolithe - Google Patents

Dispositif integre de façon monolithe Download PDF

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Publication number
WO1997020320A1
WO1997020320A1 PCT/IT1996/000226 IT9600226W WO9720320A1 WO 1997020320 A1 WO1997020320 A1 WO 1997020320A1 IT 9600226 W IT9600226 W IT 9600226W WO 9720320 A1 WO9720320 A1 WO 9720320A1
Authority
WO
WIPO (PCT)
Prior art keywords
stl
terminals
substrate
sub
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IT1996/000226
Other languages
English (en)
Inventor
Ubaldo Mastromatteo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SRL
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SRL
Priority to JP9520343A priority Critical patent/JP2000503762A/ja
Priority to EP96940127A priority patent/EP0864159A1/fr
Priority to AU77097/96A priority patent/AU7709796A/en
Priority to BR9611784-2A priority patent/BR9611784A/pt
Publication of WO1997020320A1 publication Critical patent/WO1997020320A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21B—FUSION REACTORS
    • G21B3/00—Low temperature nuclear fusion reactors, e.g. alleged cold fusion reactors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21B—FUSION REACTORS
    • G21B3/00—Low temperature nuclear fusion reactors, e.g. alleged cold fusion reactors
    • G21B3/002—Fusion by absorption in a matrix
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

Definitions

  • This invention relates to a monolithically integrated device capable of generating thermal energy, based on a physical phenomenon attributed to cold nuclear fusion reactions.
  • Object of this invention is to provide a monolithically integrated device capable of effectively generating thermal energy by exploiting the aforementioned phenomenon and of overcoming the aforementioned drawbacks.
  • Fig. 1 shows the section of a first device according to this invention
  • Fig. 2 shows the top view of the device of Fig. 1,
  • Fig. 3 shows the section of part of a second device according to this invention
  • Fig. 4 shows the top view of the device of Fig. 3,
  • Fig. 5 shows the section of part of a third device according to this invention
  • Fig. 6 shows the bottom view of the device of Fig. 5
  • Fig. 7 shows the section of a greater part of the device of Fig . 1 .
  • Fig. 8 shows the section of a greater part of the device of Fig. 3,
  • Fig. 9 shows the section of a greater part of the device of Fig. 5,
  • Fig. 10 shows schematically the top view of the whole part of generation of thermal and electric energy of the device of Fig. 8,
  • Fig. 11 shows schematically the top view of the whole device of Fig. 8, and
  • Fig. 12 shows schematically the top view of a thermopile of a known type utilizable in the device of Fig. 10.
  • the invention starts from the recognition that in the field of integrated electronic circuits the fact is known that, during the fabrication of the same, some component materials, such as for instance boron nitride, silicon carbide, silicon nitride, aluminium arsenide, gallium arsenide enrich in hydrogen, causing degradations of the performances; such phenomenon is explained, for instance, in S. Manzini's article, "Active doping instability in n+-p silicon surface avalanche diodes", Solid form Electronics, Vol. 32, Nr. 2, pp. 331-337, 1995 and in the articles mentioned in the references.
  • a process step typical of the techniques of fabrication of electronic integrated circuits, which leads to the formation of hydrogen-rich materials is the PECVD (Plasma Enhanced Chemical Vapor Deposition) ; details on this process step and also on all the fabrication techniques of silicon-based integrated electronic circuits may be drawn from S.M. Sze's book, “VLSI Technology", McGraw-Hill, 1988; in addition, fabrication techniques that are specific of the integrated electronic circuits based on germanium and gallium arsenide are well known in the literature.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • a typical chemical reaction between hydrogen compounds using the PECVD technique is the following one:
  • Such oxidoreduction reaction [1] takes place from leftside to rightside if we reach a rather high temperature Tl, for instance 400°C, and if we cause the two leftside reagents to be in the plasma phase instead that in the gaseous phase; At such "low” temperature Tl, the reaction [1] is not complete and stoichiometric and many bonds remain therefore between hydrogen and the A and B elements; generally, these bonds are single, i.e. "j" and "k” are equal to one; from reaction [1] a solid composition is obtained that has a high content of chemically bound hydrogen (and therefore of deuterium and tritium) and of gaseous state hydrogen, which does not remain in high amount in the composition.
  • reaction [1] becomes complete and stoichiometric, i. e. the following reaction takes place:
  • temperatures Tl and T2 depend on the A and B elements utilized; besides, it must be taken into account that there are no critical values which cause abrupt variations in the reaction speed for reactions [1] and [2] .
  • the method according to this invention proposes to utilize a first structure from a first material in solid form suitable to absorb hydrogen with ensuing generation of thermal energy, and to utilize a second structure from a second material in solid form suitable to release hydrogen when it is at a temperature higher than a prefixed temperature, to put in contact at least partly to one another said first and said second structure, and to heat at the start at least said second structure, at least until it has exceeded said prefixed temperature in at least one part; the starting heating may also be caused by the environment where the two structures are placed.
  • the starting heating causes in the second structure the release of some hydrogen; such hydrogen will move, for instance by diffusion in the solid state, in the second structure and pass, at least partly into the first structure, as this one is in contact with the second structure.
  • the first structure absorbs hydrogen and starts generating thermal energy, because of the presumed nuclear fusion reactions, and then starts heating.
  • the second structure will be heated by the first structure and therefore the process of hydrogen release goes on; as a consequence, the first structure goes on heating. If the first structure should not be in condition of heating the second structure sufficiently, the "starting" heating can be expected to go on, for instance, for the whole duration of the process of thermal energy generation.
  • the aforementioned silicon nitride-based solid composition is only one of the possible second materials that stresses such release properties; of course, such second materials may be produced according to different techniques, among which the PECVD.
  • first material one can choose among: palladium, titanium, platinum, nickel, and alloy thereof, and any other material showing such absorption property.
  • the starting heating of the second structure may involve, in some cases, a starting heating also of the first structure through their contact, is an advantage as, in such cases, the hydrogen absorption by the first structure is spurred; such heating may also be spurred, if necessary, by a suitable arrangement of the materials and the thermal energy source.
  • Relying on the spontaneous movement of hydrogen in the second structure towards the first structure may lead to an insufficient generation of thermal energy.
  • the intensity of the electric field can be fixed beforehand on the basis of the thermal power wished.
  • the temperature of the two structures will continue to increase until they are melted and the apparatus is destroyed; should one wish to obtain different thermal powers at different times, controlling through the intensity of the electric field the thermal energy generated is very advantageous; Through field inversion it is even possible to cancel the effect of the spontaneous movement of hydrogen, and therefore to inhibit entirely the generation of thermal energy.
  • the hydrogen and its isotopes that are released through reaction [2] are absorbed by the first absorbing material with good efficiency, as the two materials are m contact with one another and both of them are solid.
  • the concentration of hydrogen in the second material m terms of atoms per cubic centimeter, be sufficient to originate an appreciable number of fusion phenomena per volume unit of the first material.
  • a concentration of IO 22 may be chosen for the hydrogen in the silicon nitride and the nitride massmay be caused to be 9 times greater than the nickel mass; in this way, the number of hydrogen atoms that can be released is about equal to the number of nickel atoms available; in fact, the density of nickel is equal to 9 x IO 22 .
  • reaction [1] not to complete in reaction [2]
  • reaction [1] not to complete in reaction [2]
  • it is of the essential to cause reaction [1] not to complete in reaction [2], so as to trap much hydrogen in the resulting solid composition; of course, should some not chemically bound hydrogen be trapped in the composition but, for instance, in atomic and/or molecular and/or ionic form, this would be no problem, but on the contrary an advantage, as surely it would be released once the composition has been heated up to a temperature higher than Tl .
  • first and the second structure are in contact at least partly with one another.
  • the first structure is indicated by STl and the second structure by ST2, while the substrate is indicated by SUB; its function is to support the device and it may be realized, for instance, from silicon.
  • ST2 surrounds structure STl, and therefore the hydrogen follows a path which depends on its starting position and which may be either horizontal or vertical or oblique.
  • an insulating structure STS or thermally insulating material is advantageously placed, for instance a thick layer of silicon dioxide, so as to prevent the thermal energy generated by such generator GE from dissipating through conduction in substrate SUB or damaging it; in the embodiments of Figs. 1, 3, 5, the material of structure STS is usefully also an electric insulator, to prevent current dissipations; this is true for silicon dioxide.
  • the device should usefully furtherly comprise, at least in the part occupied by generator GE, a a third structure ST3 of a third material in solid form suitable to generate thermal energy when it is submitted to the passage of electric current, so placed as to be thermally coupled at least to said second structure ST2; said third material may be, for instance, polysilicon or doped polysilicon; structure ST3 is a resistor realizible therefore in any of the numeros ways well known in the sector of integrated circuits.
  • structure STl and structure ST3 are shaped as a line, preferably bent, and are practically fully superposed; the width of line of structure ST3 is much greater than the width of line of the first structure STl, so that it is possible to obtain a good heating; structure ST2 occupies the resting part of the space and is shaped as a substantially rectangular and flat plate.
  • structures STl, ST2, ST3 are substantially all shaped as a bent line and are placed side by side; a variant consists in the realization of structure STl in the shape of a "comb" whose teeth insert in the loops of the bent line, as shown in the figures; another variant consists in giving structures STl and ST2 the same shape.
  • structures STl and ST3 have substantially the same shape and are formed by a plurality of cells, for instance and as shown in the figures, having a square form, connected to one another, for instance, by narrower and thinner channels; structure ST2 occupies the resting part of the space.
  • structure ST3 may have, in combination with structure STl, the function of polarization of the material of structure ST2; by applying to these suitable potentials an electric field may generate with field lines having such shape and direction as to spur the movement of the nuclei of such hydrogen released in structure ST2 towards structure STl.
  • a part of structure ST3, in particular the cells, is prevailingly used for the polarization function, and another part of the same, in particular the channels, is prevailingly used for the heating function.
  • structure ST3 performs both of the functions .
  • structure STl is provided with at least two terminals
  • Tl, T4, and structure ST3 is provided with at least two terminals T5, T7; besides, there is a first voltage generator Gl coupled to the two terminals Tl, T4 of structure STl, a second voltage generator G2 coupled to the two terminals T5, T7 of structure ST3, and a third voltage generator G3 coupled to terminal T4 and terminal T5; one notices that structure STl and structure ST3 form approximately a condenser with two flat parallel plates in which a dielectric is interposed constituted by structure ST2.
  • Generator G2 performs the heating function, while generator G3 performs the polarization function; generator Gl may be advantageously utilized, in case of necessity, to optimize the polarization function; in fact, as the potential of structure ST3 changes from point to point because of generator G2 and as, in general, the materials of structure STl and of structure ST3 are different, it may be important to check, through generator G3, the intensity of the electric field and therefore the polarization of structure ST2 when the position changes, for instance to obtain a uniform generation of thermal energy.
  • Fig. 2 shows also terminals T2 and T3, additional for structure STl, and terminal T6 additional for structure ST3; such additional terminals in combination with the "normal" terminals, may be advantageously utilized both to better control the polarization of structure ST2, and to better control the heating of structure STl, as well as to better control the generation of thermal energy, for instance by excluding completely only part of structure ST3 from the generation of thermal energy.
  • structures STl and ST3 may be provided with like terminals, even though they are not shown in said figures.
  • thermopile system the integrability in monolithic form is facilitated; such thermopile system should be so located that its hot contact regions are thermally coupled with at least structure STl, the real heat source.
  • thermopile system one means, in general, a plurality of thermopiles serially connected with one another; it cannot be excluded that, with a suitable choice of materials and in some applications, the thermopile system may be formed by one only thermopile.
  • Thermopiles are well known devices which operate generally by exploiting the Seebeck effect.
  • thermopile converter STP is placed with its hot contact part on structure STl, which ensures a good thermal coupling, and the resting part on structure STS.
  • generator GE is placed on structure STl, which in its turn is placed on structure STS; structure STl extends much beyond the edge of generator GE; the thermopile converter STP is place sideways on generator GE, and more particularly with its hot contact part on structure STl, which ensures a good heat transfer, and the resting part on structure STS.
  • generator GE is placed on structure STl, which ensures a good thermal coupling, which, in its turn, is placed on the hot contact part of the thermopile converter STP; converter STP is placed on structure STS.
  • Fig. 12 shows schematically the top view of a thermopile TP; this comprises a fourth flat structure ST4 made from a fourth electric conductive material shaped an "L”, a sixth flat structure ST6 from a sixth electric conductive material, other than the fourth one, shaped as an "L”, and a fifth flat structure ST5 from electrically conductive material; structure ST5 has a shape complementary to structure ST6 and flanks the latter on both sides of the "L”; structure ST4 is superposed to the two other structures, so as to have a region of electric contact with structure ST6 at a first extremity, called region of hot contact; at the second extremity, structures ST4 and ST6 present respectively a first terminal Pl and a second terminal P2.
  • thermopiles operate also as temperature sensors of generator GE.
  • thermopile converter STP If generator GE and the thermopile converter STP are placed sideways on one another as shown in Fig. 8, it is advantageous to choose the material of structure ST4 equal to the material of structure STl, the material of structure ST4 equal to the material of structure STl, the material of structure ST6 equal to the material of structure ST3, so that both the thermopiles TP and generator GE can be realized through the same process steps.
  • the same aim may be reached by choosing the material of structure ST4 equal to the material of structure ST3, the material of structure ST5 equal to the material of structure ST2, the material of structure ST6 equal to the material of structure STl.
  • Fig. 10 shows a structure which might constitute a complete device encloseable in a package and suitable to feed an electric or electronic circuit.
  • This comprises a generator GE, for instance that shown in Figs. 3, 4, 8, connected to, for instance, four electric lines, to feed the terminals of structures STl and ST3, which, as a whole, form a bus BC for the control of the generation of thermal energy, and comprises a thermopile converter STP formed by fifteen thermopiles TP crown-arranged around the generator GE, electrically insulated from one anotherm electrically insulated from generator GE, but thermally coupled to the same; the crown is open to allow the passage of bus BC.
  • a generator GE for instance that shown in Figs. 3, 4, 8, connected to, for instance, four electric lines, to feed the terminals of structures STl and ST3, which, as a whole, form a bus BC for the control of the generation of thermal energy, and comprises a thermopile converter STP formed by fifteen thermopiles TP crown-arranged around the generator GE, electrically insulated from one anotherm electrically insulated from generator GE, but thermally coupled to the same; the crown is open to allow the passage of
  • thermopiles TP are serially connected with one another, i.e.: terminal P2 of one of them is connected to terminal Pl of the adjoining one; terminal Pl of the first one is connected to a positive line LP; terminal P2 of the last one is connected to a negative line LN. Lines LP and LN may therefore be utilized ar terminals of a voltage generator.
  • Fig. 10 may alternatively be utilized inside a conventional integrated system as feeding source.
  • Fig. 11 shows the structure of one such integrated circuit, which structure comprises: a generator GE, a control bus BC connected to generator GE, a converter STP, two lines LP and LN - positive and negative - connected to converter STP, control circuit SC monolithically integrated, connected to bus BC and lines LP and LN, two feeding and mass lines VCC and GND connected to circuit SC, an applicative circuit CC monolithically integrated, suitable to perform analogic and/or logic electric functions of a conventional type and connected to lines VCC and GND to be fed by them.
  • Circuit SC which in a simple embodiment might also be omitted, can perform the following functions: take the current required by circuit CC, send to the terminals of the structures of generator GE suitable voltages through bus BC, take the temperature of generator GE through lines LP and LN, receive the voltage generated by converter STP through lines LP and LN, stablize the voltage supplied to lines VCC and GND.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Primary Cells (AREA)

Abstract

Le dispositif intégré de façon monolithe selon cette invention comporte un premier substrat (SUB) et, au moins, dans une partie, a) une première structure (ST1) d'une première substance, sous forme solide, propre à absorber de l'hydrogène, avec pour corollaire une production d'énergie thermique, se superposant audit substrat (SUB), b) une deuxième structure (ST2) d'une deuxième substance, sous forme solide, propre à libérer de l'hydrogène lorsqu'elle atteint une température supérieure à une température préétablie, se superposant audit substrat (SUB), c) une troisième structure (ST3) d'une troisième substance, sous forme solide, propre à produire de l'énergie thermique lorsqu'elle est soumise à un courant électrique et placée de manière à être en couplage thermique avec la deuxième structure précitée (ST2). Lesdites première et deuxième structures (ST1 et ST2) sont en contact, partiellement, au moins.
PCT/IT1996/000226 1995-11-30 1996-11-26 Dispositif integre de façon monolithe Ceased WO1997020320A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9520343A JP2000503762A (ja) 1995-11-30 1996-11-26 モノリシック集積装置
EP96940127A EP0864159A1 (fr) 1995-11-30 1996-11-26 Dispositif integre de fa on monolithe
AU77097/96A AU7709796A (en) 1995-11-30 1996-11-26 Monolithically integrated device
BR9611784-2A BR9611784A (pt) 1995-11-30 1996-11-26 Dispositivo integrado de forma monolìtica

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT95MI002502A IT1276998B1 (it) 1995-11-30 1995-11-30 Dispositivo integrato monoliticamente
ITMI95A002502 1995-11-30

Publications (1)

Publication Number Publication Date
WO1997020320A1 true WO1997020320A1 (fr) 1997-06-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IT1996/000226 Ceased WO1997020320A1 (fr) 1995-11-30 1996-11-26 Dispositif integre de façon monolithe

Country Status (8)

Country Link
EP (1) EP0864159A1 (fr)
JP (1) JP2000503762A (fr)
CN (1) CN1203690A (fr)
AU (1) AU7709796A (fr)
BR (1) BR9611784A (fr)
IT (1) IT1276998B1 (fr)
RU (1) RU2175788C2 (fr)
WO (1) WO1997020320A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001029844A1 (fr) * 1999-10-21 2001-04-26 Stmicroelectronics S.R.L. Procede et dispositif permettant de generer de l'energie thermique
WO2003019576A1 (fr) * 2001-08-23 2003-03-06 Vatajitsyn, Andrei Ivanovitch Dispositif de production d'energie
WO2015040077A1 (fr) * 2013-09-17 2015-03-26 Airbus Defence and Space GmbH Dispositif générateur d'énergie et procédé de génération d'énergie et ensemble de commande et récipient réactionnel associé

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105206313B (zh) * 2015-10-15 2017-05-31 西安雍科建筑科技有限公司 一种冷聚变反应试验装置

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JPS6376443A (ja) * 1986-09-19 1988-04-06 Nec Corp 半導体装置
SU1364168A1 (ru) * 1986-01-22 1991-09-23 Институт электроники АН БССР Многоэлементный термоэлектрический преобразователь
JPH06138269A (ja) * 1992-10-27 1994-05-20 Hiroshi Kubota 常温核融合材料及び該材料を用いた常温核融合装置

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US5015432A (en) * 1973-10-24 1991-05-14 Koloc Paul M Method and apparatus for generating and utilizing a compound plasma configuration
RU2115178C1 (ru) * 1989-03-13 1998-07-10 Юниверсити Оф Юта Рисерч Фаундейшн Способ и устройство для генерирования тепла
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SU1364168A1 (ru) * 1986-01-22 1991-09-23 Институт электроники АН БССР Многоэлементный термоэлектрический преобразователь
JPS6376443A (ja) * 1986-09-19 1988-04-06 Nec Corp 半導体装置
JPH06138269A (ja) * 1992-10-27 1994-05-20 Hiroshi Kubota 常温核融合材料及び該材料を用いた常温核融合装置

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PATENT ABSTRACTS OF JAPAN vol. 018, no. 439 (P - 1787) 16 August 1994 (1994-08-16) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001029844A1 (fr) * 1999-10-21 2001-04-26 Stmicroelectronics S.R.L. Procede et dispositif permettant de generer de l'energie thermique
WO2003019576A1 (fr) * 2001-08-23 2003-03-06 Vatajitsyn, Andrei Ivanovitch Dispositif de production d'energie
WO2015040077A1 (fr) * 2013-09-17 2015-03-26 Airbus Defence and Space GmbH Dispositif générateur d'énergie et procédé de génération d'énergie et ensemble de commande et récipient réactionnel associé

Also Published As

Publication number Publication date
IT1276998B1 (it) 1997-11-04
JP2000503762A (ja) 2000-03-28
ITMI952502A0 (fr) 1995-11-30
BR9611784A (pt) 1999-12-28
ITMI952502A1 (it) 1997-05-30
RU2175788C2 (ru) 2001-11-10
EP0864159A1 (fr) 1998-09-16
AU7709796A (en) 1997-06-19
CN1203690A (zh) 1998-12-30

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