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KR20100086934A - 박막 트랜지스터 및 그 제조방법 - Google Patents

박막 트랜지스터 및 그 제조방법 Download PDF

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Publication number
KR20100086934A
KR20100086934A KR1020097017777A KR20097017777A KR20100086934A KR 20100086934 A KR20100086934 A KR 20100086934A KR 1020097017777 A KR1020097017777 A KR 1020097017777A KR 20097017777 A KR20097017777 A KR 20097017777A KR 20100086934 A KR20100086934 A KR 20100086934A
Authority
KR
South Korea
Prior art keywords
layer
seed
gate insulating
insulating layer
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020097017777A
Other languages
English (en)
Korean (ko)
Inventor
마사하루 니시우라
Original Assignee
후지 덴키 홀딩스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지 덴키 홀딩스 가부시키가이샤 filed Critical 후지 덴키 홀딩스 가부시키가이샤
Publication of KR20100086934A publication Critical patent/KR20100086934A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Thin Film Transistor (AREA)
KR1020097017777A 2007-11-22 2008-05-20 박막 트랜지스터 및 그 제조방법 Withdrawn KR20100086934A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007303665 2007-11-22
JPJP-P-2007-303665 2007-11-22
JPJP-P-2008-019658 2008-01-30
JP2008019658 2008-01-30

Publications (1)

Publication Number Publication Date
KR20100086934A true KR20100086934A (ko) 2010-08-02

Family

ID=40667311

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097017777A Withdrawn KR20100086934A (ko) 2007-11-22 2008-05-20 박막 트랜지스터 및 그 제조방법

Country Status (3)

Country Link
KR (1) KR20100086934A (ja)
TW (1) TW200935521A (ja)
WO (1) WO2009066479A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8395156B2 (en) * 2009-11-24 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI445181B (zh) 2012-02-08 2014-07-11 E Ink Holdings Inc 薄膜電晶體
CN115132819A (zh) * 2022-07-28 2022-09-30 惠科股份有限公司 薄膜晶体管及其制备方法、显示面板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794749A (ja) * 1993-09-22 1995-04-07 Toshiba Corp 薄膜トランジスタの製造方法
JPH0897427A (ja) * 1994-07-27 1996-04-12 Sharp Corp 薄膜半導体素子および薄膜トランジスタ並びにその製造方法

Also Published As

Publication number Publication date
TW200935521A (en) 2009-08-16
WO2009066479A1 (ja) 2009-05-28

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20090826

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid