JP3940673B2 - Ｉｉｉ族窒化物半導体結晶の製造方法、および窒化ガリウム系化合物半導体の製造方法 - Google Patents
Ｉｉｉ族窒化物半導体結晶の製造方法、および窒化ガリウム系化合物半導体の製造方法 Download PDFInfo
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- JP3940673B2 JP3940673B2 JP2002521342A JP2002521342A JP3940673B2 JP 3940673 B2 JP3940673 B2 JP 3940673B2 JP 2002521342 A JP2002521342 A JP 2002521342A JP 2002521342 A JP2002521342 A JP 2002521342A JP 3940673 B2 JP3940673 B2 JP 3940673B2
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- gallium nitride
- metal
- substrate
- group iii
- temperature
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 303
- 239000013078 crystal Substances 0.000 title claims abstract description 204
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 96
- 229910002601 GaN Inorganic materials 0.000 title claims description 407
- -1 gallium nitride compound Chemical class 0.000 title claims description 148
- 239000000758 substrate Substances 0.000 claims abstract description 379
- 229910052751 metal Inorganic materials 0.000 claims abstract description 295
- 239000002184 metal Substances 0.000 claims abstract description 295
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 260
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 120
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 261
- 238000000034 method Methods 0.000 claims description 218
- 239000007789 gas Substances 0.000 claims description 141
- 229910052594 sapphire Inorganic materials 0.000 claims description 137
- 239000010980 sapphire Substances 0.000 claims description 137
- 239000002994 raw material Substances 0.000 claims description 123
- 230000008569 process Effects 0.000 claims description 110
- 239000012159 carrier gas Substances 0.000 claims description 107
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 76
- 125000002524 organometallic group Chemical group 0.000 claims description 75
- 239000001257 hydrogen Substances 0.000 claims description 73
- 229910052739 hydrogen Inorganic materials 0.000 claims description 73
- 238000000137 annealing Methods 0.000 claims description 61
- 238000005121 nitriding Methods 0.000 claims description 52
- 229910052733 gallium Inorganic materials 0.000 claims description 36
- 239000010419 fine particle Substances 0.000 claims description 34
- 229910052782 aluminium Inorganic materials 0.000 claims description 33
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- 229910052738 indium Inorganic materials 0.000 claims description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 13
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- 238000000354 decomposition reaction Methods 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 238000000197 pyrolysis Methods 0.000 claims description 7
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 7
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 6
- 239000007769 metal material Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 421
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 182
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 162
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 123
- 229910021529 ammonia Inorganic materials 0.000 description 77
- 239000010408 film Substances 0.000 description 67
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 62
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 60
- 230000004888 barrier function Effects 0.000 description 50
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- 229910001873 dinitrogen Inorganic materials 0.000 description 26
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- 239000011777 magnesium Substances 0.000 description 17
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 238000005253 cladding Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000008901 benefit Effects 0.000 description 10
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- 239000000463 material Substances 0.000 description 10
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
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- 238000002474 experimental method Methods 0.000 description 7
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- 229910000077 silane Inorganic materials 0.000 description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 5
- 150000002902 organometallic compounds Chemical class 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
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- 238000001312 dry etching Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 3
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- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910001507 metal halide Inorganic materials 0.000 description 3
- 150000005309 metal halides Chemical class 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002259 gallium compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910001922 gold oxide Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
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- 239000002923 metal particle Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
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- 150000002830 nitrogen compounds Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
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Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000248106 | 2000-08-18 | ||
| JP2000252067 | 2000-08-23 | ||
| US25489800P | 2000-12-13 | 2000-12-13 | |
| US25489500P | 2000-12-13 | 2000-12-13 | |
| JP2001016636 | 2001-01-25 | ||
| US26985201P | 2001-02-21 | 2001-02-21 | |
| JP2001048721 | 2001-02-23 | ||
| US27611601P | 2001-03-16 | 2001-03-16 | |
| PCT/JP2001/007080 WO2002017369A1 (fr) | 2000-08-18 | 2001-08-17 | Procede de fabrication de cristal semi-conducteur de nitrure du groupe iii, procede de fabrication d'un semi-conducteur a base de nitrure de gallium, semi-conducteur a base de nitrure de gallium, dispositif electroluminescent a semi-conducteur a base de nitrure de gallium, et source lumineuse utilisant ce dispositif electro |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004507106A JP2004507106A (ja) | 2004-03-04 |
| JP3940673B2 true JP3940673B2 (ja) | 2007-07-04 |
Family
ID=27573712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002521342A Expired - Fee Related JP3940673B2 (ja) | 2000-08-18 | 2001-08-17 | Ｉｉｉ族窒化物半導体結晶の製造方法、および窒化ガリウム系化合物半導体の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP3940673B2 (fr) |
| AU (1) | AU2001280097A1 (fr) |
| DE (1) | DE10196361B4 (fr) |
| GB (1) | GB2372635B (fr) |
| WO (1) | WO2002017369A1 (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2001280097A1 (en) * | 2000-08-18 | 2002-03-04 | Showa Denko K.K. | Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light |
| JP3768943B2 (ja) * | 2001-09-28 | 2006-04-19 | 日本碍子株式会社 | Ｉｉｉ族窒化物エピタキシャル基板、ｉｉｉ族窒化物素子用エピタキシャル基板及びｉｉｉ族窒化物素子 |
| JP2004083316A (ja) * | 2002-08-26 | 2004-03-18 | Namiki Precision Jewel Co Ltd | 単結晶サファイア基板および単結晶サファイア基板の作製方法ならびに液晶プロジェクタ装置 |
| KR101034055B1 (ko) | 2003-07-18 | 2011-05-12 | 엘지이노텍 주식회사 | 발광 다이오드 및 그 제조방법 |
| DE10335081A1 (de) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip |
| DE10335080A1 (de) | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| WO2005062390A1 (fr) * | 2003-12-22 | 2005-07-07 | Showa Denko K.K. | Dispositif a semi-conducteur a base de nitrure du groupe iii et dispositif electroluminescent utilisant ledit dispositif |
| FI118196B (fi) * | 2005-07-01 | 2007-08-15 | Optogan Oy | Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä |
| KR100712753B1 (ko) * | 2005-03-09 | 2007-04-30 | 주식회사 실트론 | 화합물 반도체 장치 및 그 제조방법 |
| TWI360234B (en) | 2005-04-07 | 2012-03-11 | Showa Denko Kk | Production method of group iii nitride semiconduct |
| JP2006344930A (ja) * | 2005-04-07 | 2006-12-21 | Showa Denko Kk | Ｉｉｉ族窒化物半導体素子の製造方法 |
| JP5131889B2 (ja) * | 2005-12-06 | 2013-01-30 | 学校法人 名城大学 | 窒化物系化合物半導体素子の製造方法 |
| KR100901822B1 (ko) * | 2007-09-11 | 2009-06-09 | 주식회사 실트론 | 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법 |
| JP5167974B2 (ja) * | 2008-06-16 | 2013-03-21 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法 |
| US9556535B2 (en) * | 2014-08-29 | 2017-01-31 | Soko Kagaku Co., Ltd. | Template for epitaxial growth, method for producing the same, and nitride semiconductor device |
| CN114050104B (zh) * | 2021-11-12 | 2022-09-30 | 松山湖材料实验室 | 氮化铝单晶衬底的加工方法及紫外发光器件的制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50109621A (fr) * | 1974-02-04 | 1975-08-28 | ||
| JPS60173829A (ja) * | 1984-02-14 | 1985-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体薄膜の成長方法 |
| JPS63239936A (ja) * | 1987-03-27 | 1988-10-05 | Canon Inc | 多結晶薄膜半導体の形成方法 |
| JPH05109621A (ja) * | 1991-10-15 | 1993-04-30 | Asahi Chem Ind Co Ltd | 窒化ガリウム系薄膜の成長方法 |
| JPH09134878A (ja) * | 1995-11-10 | 1997-05-20 | Matsushita Electron Corp | 窒化ガリウム系化合物半導体の製造方法 |
| JPH10215035A (ja) * | 1997-01-30 | 1998-08-11 | Toshiba Corp | 化合物半導体素子及びその製造方法 |
| JPH11135832A (ja) * | 1997-10-26 | 1999-05-21 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体及びその製造方法 |
| JP3988245B2 (ja) * | 1998-03-12 | 2007-10-10 | ソニー株式会社 | 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体装置の製造方法 |
| JP3650531B2 (ja) * | 1998-08-24 | 2005-05-18 | 三菱電線工業株式会社 | ＧａＮ系結晶基材およびその製造方法 |
| JP2001057463A (ja) * | 1999-06-07 | 2001-02-27 | Sharp Corp | 窒素化合物半導体膜構造及び窒素化合物半導体素子並びにそれらの製造方法 |
| AU2001280097A1 (en) * | 2000-08-18 | 2002-03-04 | Showa Denko K.K. | Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light |
-
2001
- 2001-08-17 AU AU2001280097A patent/AU2001280097A1/en not_active Abandoned
- 2001-08-17 DE DE10196361T patent/DE10196361B4/de not_active Expired - Fee Related
- 2001-08-17 JP JP2002521342A patent/JP3940673B2/ja not_active Expired - Fee Related
- 2001-08-17 WO PCT/JP2001/007080 patent/WO2002017369A1/fr not_active Ceased
- 2001-08-17 GB GB0208076A patent/GB2372635B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU2001280097A1 (en) | 2002-03-04 |
| DE10196361B4 (de) | 2008-01-03 |
| DE10196361T5 (de) | 2005-05-25 |
| GB2372635A (en) | 2002-08-28 |
| GB2372635B (en) | 2005-01-19 |
| JP2004507106A (ja) | 2004-03-04 |
| WO2002017369A1 (fr) | 2002-02-28 |
| GB0208076D0 (en) | 2002-05-22 |
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