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GB2372635A - Method of fabricating group-III nitride semiconductor crystal,metho of fabricating gallium nitride-based compound semiconductor,gallium nitride-based compound - Google Patents

Method of fabricating group-III nitride semiconductor crystal,metho of fabricating gallium nitride-based compound semiconductor,gallium nitride-based compound Download PDF

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Publication number
GB2372635A
GB2372635A GB0208076A GB0208076A GB2372635A GB 2372635 A GB2372635 A GB 2372635A GB 0208076 A GB0208076 A GB 0208076A GB 0208076 A GB0208076 A GB 0208076A GB 2372635 A GB2372635 A GB 2372635A
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United Kingdom
Prior art keywords
fabricating
based compound
gallium nitride
group
semiconductor crystal
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GB0208076A
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GB2372635B (en
GB0208076D0 (en
Inventor
Yasuhito Urashima
Mineo Okuyama
Tetsuo Sakurai
Hisayuki Miki
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Resonac Holdings Corp
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Showa Denko KK
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Publication of GB2372635A publication Critical patent/GB2372635A/en
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Publication of GB2372635B publication Critical patent/GB2372635B/en
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.

Description

,2,UK Patent Application 1g,GB 11 2 372 635 13,A (43) Date of Printing by
UK Office 28.08.2002 (21) Application No 0208076.0 (51) INTCL7 HOlL 21/205 33/00 (22) Date of Filing 17.08.2001 (52) UK CL (Edition T) (30) Priority Data H1K KLDBM K1EA K2R3A K2S1C K2S1D K2S1E K2S16 (31) 2000248106 (32) 18.08.2000 (33) JP K2S2D K2S20 K2S3B K2S3D K2S6 K3E1M K3E5C1
(31) 2000252067 (32) 23.08.2000 K9A K9E K9N2 K9N3 K9P3 K9S
(31) 60254895 (32) 13.12.2000 (33) US C7F FHE FP914 FR916
(31) 60254898 (32) 13.12.2000
(31) 2001016636 (32) 25.01.2001 (33) JP (56) Documents Cited by ISA (31) 60269852 (32) 21.02.2001 (33) US JP630239936A JP600173829A
(31) 2001048721 (32) 23.02.2001 (33) JP JP 110261169 A JP 110135832 A
(31) 60276116 (32) 16.03.2001 (33) US JP 100215035 A JP 090134878 A
JP 050109621 A JP 2001057463 A
(86) International Application Data JP 2000068559 A (58) Field of Search by ISA
(87) International Publication Data INT CL7 HOlL 21/205 33/00 W02002/017369 En 28.02.2002 Jap. UM Gazette 1926-96; Jap. Unexamined UM Applications 1971-2001: Jap. Reg. UM Gazette 19942001; Jap. Gazette containing UM 1996-2001 (71), (72) and (74) continued overleaf (54) Abstract Title Method of fabricating group-El nitride semiconductor crystal,metho of fabricating gallium nitride-based compound samiconductor, gallium nitride-based compound (57) A method of fabricating a film of group-El nitride semiconductor crystal includes a step of using metal material to deposit particles of a group lil metal on a substrate surface in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-El nitride semiconductor crystal on the substrate surface on which the particles have been deposited.
_ >_ 54
-I 1 Sa l Sa Sa l Sa : I G r -' Sb Sb Sb . 1 -, Sb Sb Sb :W: 1 O3
n : 2 2 -1 D This international application has entered the national phase early.
(71) Applicant(s) Showa Denko K.K.
(Incorporated in Japan) 31-9 Shiba Daimon Home, Minato-ku, Tokyo 105-8516, Japan (72) Inventor(s) Yasubito Urashima Mineo Okuyama Tetsuo Sakurai Hisayuki Miki (74) Agent and/or Address for Service fJ Cleveland 4W3 Chancery Lane, LONDON, WC2A 1JQ Unrted Kingdom
GB0208076A 2000-08-18 2001-08-17 Method of fabricating group-III nitride semiconductor crystals. Expired - Fee Related GB2372635B (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2000248106 2000-08-18
JP2000252067 2000-08-23
US25489800P 2000-12-13 2000-12-13
US25489500P 2000-12-13 2000-12-13
JP2001016636 2001-01-25
US26985201P 2001-02-21 2001-02-21
JP2001048721 2001-02-23
US27611601P 2001-03-16 2001-03-16
PCT/JP2001/007080 WO2002017369A1 (en) 2000-08-18 2001-08-17 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device

Publications (3)

Publication Number Publication Date
GB0208076D0 GB0208076D0 (en) 2002-05-22
GB2372635A true GB2372635A (en) 2002-08-28
GB2372635B GB2372635B (en) 2005-01-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
GB0208076A Expired - Fee Related GB2372635B (en) 2000-08-18 2001-08-17 Method of fabricating group-III nitride semiconductor crystals.

Country Status (5)

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JP (1) JP3940673B2 (en)
AU (1) AU2001280097A1 (en)
DE (1) DE10196361B4 (en)
GB (1) GB2372635B (en)
WO (1) WO2002017369A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001280097A1 (en) * 2000-08-18 2002-03-04 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light
JP3768943B2 (en) * 2001-09-28 2006-04-19 日本碍子株式会社 Group III nitride epitaxial substrate, group III nitride device epitaxial substrate, and group III nitride device
JP2004083316A (en) * 2002-08-26 2004-03-18 Namiki Precision Jewel Co Ltd Single crystal sapphire substrate, method of manufacturing single crystal sapphire substrate, and liquid crystal projector
KR101034055B1 (en) 2003-07-18 2011-05-12 엘지이노텍 주식회사 Light emitting diodes and manufacturing method
DE10335081A1 (en) * 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip
DE10335080A1 (en) 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip
WO2005062390A1 (en) * 2003-12-22 2005-07-07 Showa Denko K.K. Group iii nitride semiconductor device and light-emitting device using the same
FI118196B (en) * 2005-07-01 2007-08-15 Optogan Oy Semiconductor structure and method for producing a semiconductor structure
KR100712753B1 (en) * 2005-03-09 2007-04-30 주식회사 실트론 Compound Semiconductor Device and Manufacturing Method Thereof
TWI360234B (en) 2005-04-07 2012-03-11 Showa Denko Kk Production method of group iii nitride semiconduct
JP2006344930A (en) * 2005-04-07 2006-12-21 Showa Denko Kk Manufacturing method of group iii nitride semiconductor device
JP5131889B2 (en) * 2005-12-06 2013-01-30 学校法人 名城大学 Method of manufacturing nitride compound semiconductor device
KR100901822B1 (en) * 2007-09-11 2009-06-09 주식회사 실트론 Gallium nitride growth substrate and gallium nitride substrate manufacturing method
JP5167974B2 (en) * 2008-06-16 2013-03-21 豊田合成株式会社 Group III nitride compound semiconductor light emitting device and method of manufacturing the same
US9556535B2 (en) * 2014-08-29 2017-01-31 Soko Kagaku Co., Ltd. Template for epitaxial growth, method for producing the same, and nitride semiconductor device
CN114050104B (en) * 2021-11-12 2022-09-30 松山湖材料实验室 Processing method of aluminum nitride single crystal substrate and preparation method of ultraviolet light-emitting device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109621A (en) * 1974-02-04 1975-08-28
JPS60173829A (en) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Growing method of compound semiconductor thin-film
JPS63239936A (en) * 1987-03-27 1988-10-05 Canon Inc Method of forming polycrystalline thin film semiconductor
JPH09134878A (en) * 1995-11-10 1997-05-20 Matsushita Electron Corp Manufacture of gallium nitride compound semiconductor
JPH10215035A (en) * 1997-01-30 1998-08-11 Toshiba Corp Compound semiconductor device and method of manufacturing the same
JPH11135832A (en) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd Gallium nitride group compound semiconductor and manufacture therefor
JPH11261169A (en) * 1998-03-12 1999-09-24 Sony Corp Method of growing nitride III-V compound semiconductor and semiconductor device
JP2000068559A (en) * 1998-08-24 2000-03-03 Mitsubishi Cable Ind Ltd GaN GROUP CRYSTAL MATERIAL AND MANUFACTURE THEREOF
JP2001057463A (en) * 1999-06-07 2001-02-27 Sharp Corp Nitrogen compound semiconductor film structure, nitrogen compound semiconductor device, and method for producing them

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109621A (en) * 1991-10-15 1993-04-30 Asahi Chem Ind Co Ltd Method for growing gallium nitride thin film
AU2001280097A1 (en) * 2000-08-18 2002-03-04 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109621A (en) * 1974-02-04 1975-08-28
JPS60173829A (en) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Growing method of compound semiconductor thin-film
JPS63239936A (en) * 1987-03-27 1988-10-05 Canon Inc Method of forming polycrystalline thin film semiconductor
JPH09134878A (en) * 1995-11-10 1997-05-20 Matsushita Electron Corp Manufacture of gallium nitride compound semiconductor
JPH10215035A (en) * 1997-01-30 1998-08-11 Toshiba Corp Compound semiconductor device and method of manufacturing the same
JPH11135832A (en) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd Gallium nitride group compound semiconductor and manufacture therefor
JPH11261169A (en) * 1998-03-12 1999-09-24 Sony Corp Method of growing nitride III-V compound semiconductor and semiconductor device
JP2000068559A (en) * 1998-08-24 2000-03-03 Mitsubishi Cable Ind Ltd GaN GROUP CRYSTAL MATERIAL AND MANUFACTURE THEREOF
JP2001057463A (en) * 1999-06-07 2001-02-27 Sharp Corp Nitrogen compound semiconductor film structure, nitrogen compound semiconductor device, and method for producing them

Also Published As

Publication number Publication date
AU2001280097A1 (en) 2002-03-04
DE10196361B4 (en) 2008-01-03
DE10196361T5 (en) 2005-05-25
GB2372635B (en) 2005-01-19
JP2004507106A (en) 2004-03-04
WO2002017369A1 (en) 2002-02-28
JP3940673B2 (en) 2007-07-04
GB0208076D0 (en) 2002-05-22

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