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AU2001280097A1 - Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light - Google Patents

Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light

Info

Publication number
AU2001280097A1
AU2001280097A1 AU2001280097A AU8009701A AU2001280097A1 AU 2001280097 A1 AU2001280097 A1 AU 2001280097A1 AU 2001280097 A AU2001280097 A AU 2001280097A AU 8009701 A AU8009701 A AU 8009701A AU 2001280097 A1 AU2001280097 A1 AU 2001280097A1
Authority
AU
Australia
Prior art keywords
based compound
gallium nitride
compound semiconductor
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001280097A
Inventor
Hisayuki Miki
Mineo Okuyama
Tetsuo Sakurai
Yasuhito Urashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of AU2001280097A1 publication Critical patent/AU2001280097A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
AU2001280097A 2000-08-18 2001-08-17 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light Abandoned AU2001280097A1 (en)

Applications Claiming Priority (17)

Application Number Priority Date Filing Date Title
JP2000248106 2000-08-18
JP2000-248106 2000-08-18
JP2000252067 2000-08-23
JP2000-252067 2000-08-23
US25489500P 2000-12-13 2000-12-13
US25489800P 2000-12-13 2000-12-13
US60254898 2000-12-13
US60254895 2000-12-13
JP2001016636 2001-01-25
JP2001-16636 2001-01-25
US26985201P 2001-02-21 2001-02-21
US60269852 2001-02-21
JP2001048721 2001-02-23
JP2001-48721 2001-02-23
US27611601P 2001-03-16 2001-03-16
US60276116 2001-03-16
PCT/JP2001/007080 WO2002017369A1 (en) 2000-08-18 2001-08-17 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
AU2001280097A1 true AU2001280097A1 (en) 2002-03-04

Family

ID=27573712

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001280097A Abandoned AU2001280097A1 (en) 2000-08-18 2001-08-17 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light

Country Status (5)

Country Link
JP (1) JP3940673B2 (en)
AU (1) AU2001280097A1 (en)
DE (1) DE10196361B4 (en)
GB (1) GB2372635B (en)
WO (1) WO2002017369A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2372635B (en) * 2000-08-18 2005-01-19 Showa Denko Kk Method of fabricating group-III nitride semiconductor crystals.
JP3768943B2 (en) * 2001-09-28 2006-04-19 日本碍子株式会社 Group III nitride epitaxial substrate, group III nitride device epitaxial substrate, and group III nitride device
JP2004083316A (en) * 2002-08-26 2004-03-18 Namiki Precision Jewel Co Ltd Single crystal sapphire substrate, method of manufacturing single crystal sapphire substrate, and liquid crystal projector
KR101034055B1 (en) 2003-07-18 2011-05-12 엘지이노텍 주식회사 Light emitting diodes and manufacturing method
DE10335081A1 (en) * 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip
DE10335080A1 (en) 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip
WO2005062390A1 (en) * 2003-12-22 2005-07-07 Showa Denko K.K. Group iii nitride semiconductor device and light-emitting device using the same
FI118196B (en) * 2005-07-01 2007-08-15 Optogan Oy Semiconductor structure and method for producing a semiconductor structure
KR100712753B1 (en) * 2005-03-09 2007-04-30 주식회사 실트론 Compound Semiconductor Device and Manufacturing Method Thereof
JP2006344930A (en) * 2005-04-07 2006-12-21 Showa Denko Kk Manufacturing method of group iii nitride semiconductor device
EP1869717B1 (en) * 2005-04-07 2017-01-04 Toyoda Gosei Co., Ltd. Production method of group iii nitride semioconductor element
JP5131889B2 (en) * 2005-12-06 2013-01-30 学校法人 名城大学 Method of manufacturing nitride compound semiconductor device
KR100901822B1 (en) * 2007-09-11 2009-06-09 주식회사 실트론 Gallium nitride growth substrate and gallium nitride substrate manufacturing method
JP5167974B2 (en) * 2008-06-16 2013-03-21 豊田合成株式会社 Group III nitride compound semiconductor light emitting device and method of manufacturing the same
CN105612276B (en) * 2014-08-29 2017-02-01 创光科学株式会社 Template for epitaxial growth, manufacturing method thereof, and nitride semiconductor device
CN114050104B (en) * 2021-11-12 2022-09-30 松山湖材料实验室 Processing method of aluminum nitride single crystal substrate and preparation method of ultraviolet light-emitting device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109621A (en) * 1974-02-04 1975-08-28
JPS60173829A (en) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Growing method of compound semiconductor thin-film
JPS63239936A (en) * 1987-03-27 1988-10-05 Canon Inc Method of forming polycrystalline thin film semiconductor
JPH05109621A (en) * 1991-10-15 1993-04-30 Asahi Chem Ind Co Ltd Method for growing gallium nitride thin film
JPH09134878A (en) * 1995-11-10 1997-05-20 Matsushita Electron Corp Manufacture of gallium nitride compound semiconductor
JPH10215035A (en) * 1997-01-30 1998-08-11 Toshiba Corp Compound semiconductor device and method of manufacturing the same
JPH11135832A (en) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd Gallium nitride group compound semiconductor and manufacture therefor
JP3988245B2 (en) * 1998-03-12 2007-10-10 ソニー株式会社 Nitride III-V compound semiconductor growth method and semiconductor device manufacturing method
JP3650531B2 (en) * 1998-08-24 2005-05-18 三菱電線工業株式会社 GaN-based crystal substrate and method for producing the same
JP2001057463A (en) * 1999-06-07 2001-02-27 Sharp Corp Nitrogen compound semiconductor film structure, nitrogen compound semiconductor device, and method for producing them
GB2372635B (en) * 2000-08-18 2005-01-19 Showa Denko Kk Method of fabricating group-III nitride semiconductor crystals.

Also Published As

Publication number Publication date
DE10196361T5 (en) 2005-05-25
WO2002017369A1 (en) 2002-02-28
JP3940673B2 (en) 2007-07-04
GB2372635A (en) 2002-08-28
GB2372635B (en) 2005-01-19
JP2004507106A (en) 2004-03-04
GB0208076D0 (en) 2002-05-22
DE10196361B4 (en) 2008-01-03

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