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GB201211759D0 - Method for fabricating a rear contact heterojunction intrinsic thin layer silicon solar cell with only two masking steps and respective solar cell - Google Patents

Method for fabricating a rear contact heterojunction intrinsic thin layer silicon solar cell with only two masking steps and respective solar cell

Info

Publication number
GB201211759D0
GB201211759D0 GBGB1211759.4A GB201211759A GB201211759D0 GB 201211759 D0 GB201211759 D0 GB 201211759D0 GB 201211759 A GB201211759 A GB 201211759A GB 201211759 D0 GB201211759 D0 GB 201211759D0
Authority
GB
United Kingdom
Prior art keywords
solar cell
semiconductor layer
thin layer
layer
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB1211759.4A
Other versions
GB2503515A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
REC CELLS Pte Ltd
Original Assignee
REC CELLS Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by REC CELLS Pte Ltd filed Critical REC CELLS Pte Ltd
Priority to GB1211759.4A priority Critical patent/GB2503515A/en
Publication of GB201211759D0 publication Critical patent/GB201211759D0/en
Priority to PCT/IB2013/001369 priority patent/WO2014001885A1/en
Publication of GB2503515A publication Critical patent/GB2503515A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A silicon substrate (3) with a rear surface (5) is provided; a thin layer (7) of i-a-Si is deposited over the rear surface (5); a first semiconductor layer (13) comprising a doped semiconducting material of a first doping polarity is deposited through a first mask such that it covers first portions of a back surface (9) of the i-a-Si layer (7); a first separation layer (19) comprising an electrically insulating material is deposited through the first mask such that it covers at least an entire back surface (17) of the first semiconductor layer (13); a second semiconductor layer (21) comprising a doped semiconducting material of a second doping polarity is deposited though a second mask (27) at regions of second portions. In the finalized solar cell (1), the second semiconductor layer (21) is separated from the first semiconductor layer (13) by at least the intermediate first separation layer (19). Simple fabrication using only two shadow masking steps and high efficiency with high fill factors of the resulting HIT solar cell is achieved.
GB1211759.4A 2012-06-29 2012-06-29 A rear contact heterojunction solar cell Withdrawn GB2503515A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1211759.4A GB2503515A (en) 2012-06-29 2012-06-29 A rear contact heterojunction solar cell
PCT/IB2013/001369 WO2014001885A1 (en) 2012-06-29 2013-06-27 Method for fabricating a rear contact heterojunction intrinsic thin layer silicon solar cell with only two masking steps and respective solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1211759.4A GB2503515A (en) 2012-06-29 2012-06-29 A rear contact heterojunction solar cell

Publications (2)

Publication Number Publication Date
GB201211759D0 true GB201211759D0 (en) 2012-08-15
GB2503515A GB2503515A (en) 2014-01-01

Family

ID=46721783

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1211759.4A Withdrawn GB2503515A (en) 2012-06-29 2012-06-29 A rear contact heterojunction solar cell

Country Status (2)

Country Link
GB (1) GB2503515A (en)
WO (1) WO2014001885A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2491209B (en) 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
WO2015115360A1 (en) * 2014-01-29 2015-08-06 パナソニックＩｐマネジメント株式会社 Solar cell
KR101622091B1 (en) * 2014-08-20 2016-05-18 엘지전자 주식회사 Solar cell and method for manufacuring the same
WO2016114271A1 (en) * 2015-01-14 2016-07-21 シャープ株式会社 Photoelectric conversion element, solar cell module provided with same, and photovoltaic power generation system
US10505064B2 (en) * 2015-09-14 2019-12-10 Sharp Kabushiki Kaisha Photovoltaic device
DE102016106563A1 (en) * 2016-04-11 2017-10-12 Meyer Burger (Germany) Ag Method for producing a solar cell, solar cell produced by the method and substrate carrier
FR3073670B1 (en) * 2017-11-15 2019-12-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD OF FORMING ELECTRODES
JP7221276B2 (en) * 2018-03-23 2023-02-13 株式会社カネカ SOLAR CELL MANUFACTURING METHOD AND SOLAR CELL
CN112466962B (en) * 2020-11-19 2021-11-23 晶科绿能(上海)管理有限公司 Solar cell
CN113964229B (en) * 2021-10-09 2024-07-26 国家电投集团科学技术研究院有限公司 Back contact heterojunction battery and preparation method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003298078A (en) * 2002-03-29 2003-10-17 Ebara Corp Photovoltaic element
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
FR2914501B1 (en) * 2007-03-28 2009-12-04 Commissariat Energie Atomique PHOTOVOLTAIC DEVICE WITH DISCONTINUOUS INTERDIGITED HETEROJUNCTION STRUCTURE
JP5347409B2 (en) * 2008-09-29 2013-11-20 三洋電機株式会社 Solar cell and manufacturing method thereof
GB2467361A (en) * 2009-01-30 2010-08-04 Renewable Energy Corp Asa Contact and interconnect for a solar cell
EP2416373B1 (en) * 2009-03-30 2019-12-25 Panasonic Intellectual Property Management Co., Ltd. Solar cell
US8465909B2 (en) * 2009-11-04 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Self-aligned masking for solar cell manufacture
TW201143113A (en) * 2010-02-26 2011-12-01 Sanyo Electric Co Solar cell and method for manufacturing solar cell

Also Published As

Publication number Publication date
WO2014001885A1 (en) 2014-01-03
GB2503515A (en) 2014-01-01

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)