[go: up one dir, main page]

WO2009094575A3 - Buried insulator isolation for solar cell contacts - Google Patents

Buried insulator isolation for solar cell contacts Download PDF

Info

Publication number
WO2009094575A3
WO2009094575A3 PCT/US2009/031882 US2009031882W WO2009094575A3 WO 2009094575 A3 WO2009094575 A3 WO 2009094575A3 US 2009031882 W US2009031882 W US 2009031882W WO 2009094575 A3 WO2009094575 A3 WO 2009094575A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide
emitter
solar cell
buried insulator
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/031882
Other languages
French (fr)
Other versions
WO2009094575A2 (en
Inventor
Peter Borden
Li Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2009094575A2 publication Critical patent/WO2009094575A2/en
Publication of WO2009094575A3 publication Critical patent/WO2009094575A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/12—Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The present invention relates to methods and apparatuses for providing a buried insulator isolation for solar cell contacts. According to certain aspects, the invention places a buried oxide under the emitter of a polysilicon emitter solar cell. The oxide provides an excellent passivation layer over most of the surface. Holes in the oxide provide contact areas, increasing the current density to enhance efficiency. The oxide isolates the contacts from the substrate, achieving the advantage of a selective emitter structure without requiring deep diffusions. The oxide further enables use of screen printing on advanced shallow emitter cells. Positioning of the grid lines close to the openings also enables use of a very thin emitter to maximize blue response.
PCT/US2009/031882 2008-01-24 2009-01-23 Buried insulator isolation for solar cell contacts Ceased WO2009094575A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2335408P 2008-01-24 2008-01-24
US61/023,354 2008-01-24

Publications (2)

Publication Number Publication Date
WO2009094575A2 WO2009094575A2 (en) 2009-07-30
WO2009094575A3 true WO2009094575A3 (en) 2009-09-24

Family

ID=40901644

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/031882 Ceased WO2009094575A2 (en) 2008-01-24 2009-01-23 Buried insulator isolation for solar cell contacts

Country Status (2)

Country Link
TW (1) TW200947726A (en)
WO (1) WO2009094575A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8324015B2 (en) * 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
US8586403B2 (en) 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
EP4092764A1 (en) * 2013-04-03 2022-11-23 Lg Electronics Inc. Solar cell
CN113748522B (en) 2019-03-29 2025-01-17 迈可晟太阳能有限公司 Solar cell with hybrid structure including distinguished P-type and N-type regions and bias contacts
CN110931603A (en) * 2019-12-11 2020-03-27 晶澳（扬州）太阳能科技有限公司 Solar cell and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020140035A1 (en) * 2001-03-29 2002-10-03 Motoshige Kobayashi Semiconductor device and method of manufacturing the same
US20030189240A1 (en) * 2001-01-25 2003-10-09 Takahiko Konishi Semiconductor device
KR20040017181A (en) * 2002-08-20 2004-02-26 삼성에스디아이 주식회사 Thin film silicon solar cell and method for fabricating the same
US20060186437A1 (en) * 2005-02-23 2006-08-24 Matsushita Electric Industrial Co., Ltd. Bipolar transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030189240A1 (en) * 2001-01-25 2003-10-09 Takahiko Konishi Semiconductor device
US20020140035A1 (en) * 2001-03-29 2002-10-03 Motoshige Kobayashi Semiconductor device and method of manufacturing the same
KR20040017181A (en) * 2002-08-20 2004-02-26 삼성에스디아이 주식회사 Thin film silicon solar cell and method for fabricating the same
US20060186437A1 (en) * 2005-02-23 2006-08-24 Matsushita Electric Industrial Co., Ltd. Bipolar transistor

Also Published As

Publication number Publication date
WO2009094575A2 (en) 2009-07-30
TW200947726A (en) 2009-11-16

Similar Documents

Publication Publication Date Title
WO2009094575A3 (en) Buried insulator isolation for solar cell contacts
MY177509A (en) Trench process and structure for backside contact solar cells with polysilicon doped regions
CN105993079B (en) Solar cells with tunnel dielectrics
WO2006135443A3 (en) Back-contact photovoltaic cells
WO2007126441A3 (en) Back-contact photovoltaic cells
WO2009052511A3 (en) Mono-silicon solar cells
JP6224730B2 (en) Method for forming a diffusion region of a solar cell
TW200703698A (en) Solar cell manufacturing method, solar cell and semiconductor device manufacturing method
WO2010071341A3 (en) Solar cell and method of manufacturing the same
TW200741916A (en) Low resistance and inductance backside through vias and methods of fabricating same
WO2009121604A3 (en) Photovoltaic solar cell and method of production thereof
WO2008115814A3 (en) Solar cells
TW200703699A (en) Solar cell manufacturing method and solar cell
WO2011082371A3 (en) Mobile electrostatic carriers for thin wafer processing
JP2009545158A5 (en)
WO2010055346A3 (en) Deep grooved rear contact photovoltaic solar cells
EP1710834A3 (en) Double trench for isolation of semiconductor devices
WO2006029250A8 (en) Process and fabrication methods for emitter wrap through back contact solar cells
WO2005076959A3 (en) Contact fabrication of emitter wrap-through back contact silicon solar cells
WO2008057438A3 (en) Power switching semiconductor devices including rectifying junction-shunts
WO2008039757A3 (en) Semiconductor devices and methods from group iv nanoparticle materials
GB201211759D0 (en) Method for fabricating a rear contact heterojunction intrinsic thin layer silicon solar cell with only two masking steps and respective solar cell
TW200638555A (en) Solar cell and semiconductor device, and manufacturing method thereof
EP2472592A3 (en) Solar cell and method of fabricating the same
TW200620541A (en) Method of manufacturing a sonos memory device with optimized shallow trench isolation, a sonos memory device with optimized shallow trench isolation and a semiconductor device comprising such a sonos memory device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09703771

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09703771

Country of ref document: EP

Kind code of ref document: A2