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WO2009094575A3 - Isolation d'isolant enterré pour contacts de cellule solaire - Google Patents

Isolation d'isolant enterré pour contacts de cellule solaire Download PDF

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Publication number
WO2009094575A3
WO2009094575A3 PCT/US2009/031882 US2009031882W WO2009094575A3 WO 2009094575 A3 WO2009094575 A3 WO 2009094575A3 US 2009031882 W US2009031882 W US 2009031882W WO 2009094575 A3 WO2009094575 A3 WO 2009094575A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide
emitter
solar cell
buried insulator
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/031882
Other languages
English (en)
Other versions
WO2009094575A2 (fr
Inventor
Peter Borden
Li Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2009094575A2 publication Critical patent/WO2009094575A2/fr
Publication of WO2009094575A3 publication Critical patent/WO2009094575A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/12—Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne des procédés et appareils assurant une isolation d'isolant enterré pour des contacts de cellule solaire. Selon certains aspects, l'invention place un oxyde enterré sous l'émetteur d'une cellule solaire à émetteur de polysilicium. L'oxyde fournit une excellente couche de passivation sur la plupart de la surface. Des trous dans l'oxyde fournissent des zones de contact, ce qui augmente la densité de courant pour améliorer l'efficacité. L'oxyde isole les contacts du substrat, ce qui offre l'avantage d'une structure d'émetteur sélective sans nécessiter de diffusions en profondeur. L'oxyde permet en outre d'utiliser la sérigraphie sur des cellules d'émetteur creuses avancées. Le positionnement des lignes de grille à proximité des ouvertures permet également d'utiliser un émetteur très mince pour optimiser la réponse du bleu.
PCT/US2009/031882 2008-01-24 2009-01-23 Isolation d'isolant enterré pour contacts de cellule solaire Ceased WO2009094575A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2335408P 2008-01-24 2008-01-24
US61/023,354 2008-01-24

Publications (2)

Publication Number Publication Date
WO2009094575A2 WO2009094575A2 (fr) 2009-07-30
WO2009094575A3 true WO2009094575A3 (fr) 2009-09-24

Family

ID=40901644

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/031882 Ceased WO2009094575A2 (fr) 2008-01-24 2009-01-23 Isolation d'isolant enterré pour contacts de cellule solaire

Country Status (2)

Country Link
TW (1) TW200947726A (fr)
WO (1) WO2009094575A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8324015B2 (en) * 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
US8586403B2 (en) 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
EP4092764A1 (fr) * 2013-04-03 2022-11-23 Lg Electronics Inc. Cellule solaire
CN113748522B (zh) 2019-03-29 2025-01-17 迈可晟太阳能有限公司 具有包括区分开的p型和n型区与偏置触点的混合结构的太阳能电池
CN110931603A (zh) * 2019-12-11 2020-03-27 晶澳（扬州）太阳能科技有限公司 太阳能电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020140035A1 (en) * 2001-03-29 2002-10-03 Motoshige Kobayashi Semiconductor device and method of manufacturing the same
US20030189240A1 (en) * 2001-01-25 2003-10-09 Takahiko Konishi Semiconductor device
KR20040017181A (ko) * 2002-08-20 2004-02-26 삼성에스디아이 주식회사 효율이 향상된 박막 실리콘 태양전지 및 그의 제조방법
US20060186437A1 (en) * 2005-02-23 2006-08-24 Matsushita Electric Industrial Co., Ltd. Bipolar transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030189240A1 (en) * 2001-01-25 2003-10-09 Takahiko Konishi Semiconductor device
US20020140035A1 (en) * 2001-03-29 2002-10-03 Motoshige Kobayashi Semiconductor device and method of manufacturing the same
KR20040017181A (ko) * 2002-08-20 2004-02-26 삼성에스디아이 주식회사 효율이 향상된 박막 실리콘 태양전지 및 그의 제조방법
US20060186437A1 (en) * 2005-02-23 2006-08-24 Matsushita Electric Industrial Co., Ltd. Bipolar transistor

Also Published As

Publication number Publication date
WO2009094575A2 (fr) 2009-07-30
TW200947726A (en) 2009-11-16

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