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GB201211683D0 - Method for fabrication a rear conact heterojunction intrinsic thin layer silicon solar cell with only one masking step and respective solar cell - Google Patents

Method for fabrication a rear conact heterojunction intrinsic thin layer silicon solar cell with only one masking step and respective solar cell

Info

Publication number
GB201211683D0
GB201211683D0 GBGB1211683.6A GB201211683A GB201211683D0 GB 201211683 D0 GB201211683 D0 GB 201211683D0 GB 201211683 A GB201211683 A GB 201211683A GB 201211683 D0 GB201211683 D0 GB 201211683D0
Authority
GB
United Kingdom
Prior art keywords
solar cell
layer
fabrication
deposited
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB1211683.6A
Other versions
GB2503513A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
REC CELLS Pte Ltd
Original Assignee
REC CELLS Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by REC CELLS Pte Ltd filed Critical REC CELLS Pte Ltd
Priority to GB1211683.6A priority Critical patent/GB2503513A/en
Publication of GB201211683D0 publication Critical patent/GB201211683D0/en
Publication of GB2503513A publication Critical patent/GB2503513A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A rear contact heterojunction intrinsic thin layer silicon solar cell 1 and fabrication method for such solar cell are proposed, For fabricating the solar cell 1 a thin intrinsic amorphous Si layer 7 is deposited over the entire rear surface of a silicon substrate 3. A first semiconductor layer 13 of a first doping polarity is deposited through a mask. Subsequently, a separation layer 19 of electrically insulating malarial such as silicon nitride is deposited through the same mask such that it covers an entire back surface of the first semiconductor layer 13. Then, a second semiconductor layer 21 is deposited over the entire area of the rear surface of the silicon substrate 3. Finally, metal contacts 39, 41 are formed optionally using a dielectric layer 23 and removable or permanent masking layers 29. The proposed method allows for simple fabrication of HIT solar cells requiring only one mask and enabling high solar cell efficiencies due to p- and n-type-regions being very close to one another.
GB1211683.6A 2012-06-29 2012-06-29 A rear contact heterojunction intrinsic thin layer silicon solar cell Withdrawn GB2503513A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1211683.6A GB2503513A (en) 2012-06-29 2012-06-29 A rear contact heterojunction intrinsic thin layer silicon solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1211683.6A GB2503513A (en) 2012-06-29 2012-06-29 A rear contact heterojunction intrinsic thin layer silicon solar cell

Publications (2)

Publication Number Publication Date
GB201211683D0 true GB201211683D0 (en) 2012-08-15
GB2503513A GB2503513A (en) 2014-01-01

Family

ID=46721718

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1211683.6A Withdrawn GB2503513A (en) 2012-06-29 2012-06-29 A rear contact heterojunction intrinsic thin layer silicon solar cell

Country Status (1)

Country Link
GB (1) GB2503513A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9806210B2 (en) * 2013-03-04 2017-10-31 Sharp Kabushiki Kaisha Photoelectric conversion element
US9761743B2 (en) * 2013-03-28 2017-09-12 Sharp Kabushiki Kaisha Photoelectric conversion element
DE102013219565A1 (en) * 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaic solar cell and method for producing a photovoltaic solar cell
DE112020001695T5 (en) * 2019-03-29 2021-12-16 Sunpower Corporation Solar cells with hybrid architectures including delimited P and N regions with offset contacts

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005025125B4 (en) * 2005-05-29 2008-05-08 Hahn-Meitner-Institut Berlin Gmbh Process for producing a solar cell contacted on one side and solar cell contacted on one side
JP5274277B2 (en) * 2009-01-27 2013-08-28 京セラ株式会社 Method for manufacturing solar cell element
US7927910B2 (en) * 2009-06-28 2011-04-19 Sino-American Silicon Products Inc. Manufacturing method of solar cell
CN202134564U (en) * 2011-06-07 2012-02-01 合肥海润光伏科技有限公司 A new IBC structure N-type silicon heterojunction cell
CN102437243B (en) * 2011-12-08 2013-11-20 常州天合光能有限公司 Heterojunction with intrinsic thin layer (HIT) solar cell structure with heterogeneous floating junction back passivation, and preparation process thereof

Also Published As

Publication number Publication date
GB2503513A (en) 2014-01-01

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)