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FR2366668A2 - Transistor a effet de champ de memorisation a canal n - Google Patents

Transistor a effet de champ de memorisation a canal n

Info

Publication number
FR2366668A2
FR2366668A2 FR7729038A FR7729038A FR2366668A2 FR 2366668 A2 FR2366668 A2 FR 2366668A2 FR 7729038 A FR7729038 A FR 7729038A FR 7729038 A FR7729038 A FR 7729038A FR 2366668 A2 FR2366668 A2 FR 2366668A2
Authority
FR
France
Prior art keywords
field effect
effect transistor
channel
source
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7729038A
Other languages
English (en)
Other versions
FR2366668B2 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2643987A external-priority patent/DE2643987C2/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2366668A2 publication Critical patent/FR2366668A2/fr
Application granted granted Critical
Publication of FR2366668B2 publication Critical patent/FR2366668B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

a. L'invention concerne un transistor à effet de champ de mémorisation à canal n. b. Dans ce transistor, qui comporte une porte de mémorisation G1, une porte de commande G2, un drain D, une source S qui est reliée à un substrat HT ainsi qu'une région semi-conductrice BX par l'intermédiaire d'une languette (capacitive), la région semi-conductrice BX est formée par une région de modification de charge isolée des deux régions de raccordement source et drain S, D. c. Application notamment pour des microplaquettes de mémoire REPROM pour calculatrices miniatures.
FR7729038A 1976-09-29 1977-09-27 Transistor a effet de champ de memorisation a canal n Granted FR2366668A2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2643987A DE2643987C2 (de) 1974-09-20 1976-09-29 n-Kanal-Speicher-FET

Publications (2)

Publication Number Publication Date
FR2366668A2 true FR2366668A2 (fr) 1978-04-28
FR2366668B2 FR2366668B2 (fr) 1982-02-26

Family

ID=5989229

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7729038A Granted FR2366668A2 (fr) 1976-09-29 1977-09-27 Transistor a effet de champ de memorisation a canal n

Country Status (4)

Country Link
US (1) US4148044A (fr)
JP (1) JPS5342686A (fr)
FR (1) FR2366668A2 (fr)
GB (1) GB1550784A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)
CH631287A5 (fr) * 1979-03-14 1982-07-30 Centre Electron Horloger Element de memoire non-volatile, electriquement reprogrammable.
US4590503A (en) * 1983-07-21 1986-05-20 Honeywell Inc. Electrically erasable programmable read only memory
US4785199A (en) * 1983-11-28 1988-11-15 Stanford University Programmable complementary transistors
KR0149571B1 (ko) * 1995-05-04 1998-10-01 김주용 반도체 소자의 트랜지스터 구조
US7200046B2 (en) * 2005-06-14 2007-04-03 Micron Technology, Inc. Low power NROM memory devices
FR2984600A1 (fr) * 2011-12-20 2013-06-21 St Microelectronics Rousset Transistor à grille flottante ayant un rendement d'injection des électrons chauds amélioré.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2298160A1 (fr) * 1975-01-17 1976-08-13 Philips Nv Memoire semi-conductrice

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881180A (en) * 1971-11-30 1975-04-29 Texas Instruments Inc Non-volatile memory cell
US3919711A (en) * 1973-02-26 1975-11-11 Intel Corp Erasable floating gate device
JPS5516375B2 (fr) * 1973-05-18 1980-05-01
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2298160A1 (fr) * 1975-01-17 1976-08-13 Philips Nv Memoire semi-conductrice

Also Published As

Publication number Publication date
FR2366668B2 (fr) 1982-02-26
US4148044A (en) 1979-04-03
GB1550784A (en) 1979-08-22
JPS5342686A (en) 1978-04-18

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