FR2366668B2 - - Google Patents
Info
- Publication number
- FR2366668B2 FR2366668B2 FR7729038A FR7729038A FR2366668B2 FR 2366668 B2 FR2366668 B2 FR 2366668B2 FR 7729038 A FR7729038 A FR 7729038A FR 7729038 A FR7729038 A FR 7729038A FR 2366668 B2 FR2366668 B2 FR 2366668B2
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2643987A DE2643987C2 (de) | 1974-09-20 | 1976-09-29 | n-Kanal-Speicher-FET |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2366668A2 FR2366668A2 (fr) | 1978-04-28 |
| FR2366668B2 true FR2366668B2 (fr) | 1982-02-26 |
Family
ID=5989229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7729038A Granted FR2366668A2 (fr) | 1976-09-29 | 1977-09-27 | Transistor a effet de champ de memorisation a canal n |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4148044A (fr) |
| JP (1) | JPS5342686A (fr) |
| FR (1) | FR2366668A2 (fr) |
| GB (1) | GB1550784A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2828855C2 (de) * | 1978-06-30 | 1982-11-18 | Siemens AG, 1000 Berlin und 8000 München | Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s) |
| CH631287A5 (fr) * | 1979-03-14 | 1982-07-30 | Centre Electron Horloger | Element de memoire non-volatile, electriquement reprogrammable. |
| US4590503A (en) * | 1983-07-21 | 1986-05-20 | Honeywell Inc. | Electrically erasable programmable read only memory |
| US4785199A (en) * | 1983-11-28 | 1988-11-15 | Stanford University | Programmable complementary transistors |
| KR0149571B1 (ko) * | 1995-05-04 | 1998-10-01 | 김주용 | 반도체 소자의 트랜지스터 구조 |
| US7200046B2 (en) * | 2005-06-14 | 2007-04-03 | Micron Technology, Inc. | Low power NROM memory devices |
| FR2984600A1 (fr) * | 2011-12-20 | 2013-06-21 | St Microelectronics Rousset | Transistor à grille flottante ayant un rendement d'injection des électrons chauds amélioré. |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3881180A (en) * | 1971-11-30 | 1975-04-29 | Texas Instruments Inc | Non-volatile memory cell |
| US3919711A (en) * | 1973-02-26 | 1975-11-11 | Intel Corp | Erasable floating gate device |
| JPS5516375B2 (fr) * | 1973-05-18 | 1980-05-01 | ||
| NL7500550A (nl) * | 1975-01-17 | 1976-07-20 | Philips Nv | Halfgeleider-geheugeninrichting. |
| JPS51117838A (en) * | 1975-04-10 | 1976-10-16 | Shindengen Electric Mfg Co Ltd | Semiconductor memory device |
-
1977
- 1977-09-19 US US05/834,425 patent/US4148044A/en not_active Expired - Lifetime
- 1977-09-27 FR FR7729038A patent/FR2366668A2/fr active Granted
- 1977-09-28 GB GB40244/77A patent/GB1550784A/en not_active Expired
- 1977-09-29 JP JP11728877A patent/JPS5342686A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4148044A (en) | 1979-04-03 |
| GB1550784A (en) | 1979-08-22 |
| FR2366668A2 (fr) | 1978-04-28 |
| JPS5342686A (en) | 1978-04-18 |