[go: up one dir, main page]

FR2396414A1 - Transistor a effet de champ a canal de longueur extremement courte - Google Patents

Transistor a effet de champ a canal de longueur extremement courte

Info

Publication number
FR2396414A1
FR2396414A1 FR7819005A FR7819005A FR2396414A1 FR 2396414 A1 FR2396414 A1 FR 2396414A1 FR 7819005 A FR7819005 A FR 7819005A FR 7819005 A FR7819005 A FR 7819005A FR 2396414 A1 FR2396414 A1 FR 2396414A1
Authority
FR
France
Prior art keywords
effect transistor
extremely short
channel field
source
length channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7819005A
Other languages
English (en)
Other versions
FR2396414B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2396414A1 publication Critical patent/FR2396414A1/fr
Application granted granted Critical
Publication of FR2396414B1 publication Critical patent/FR2396414B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/023—Manufacture or treatment of FETs having insulated gates [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un transistor à effet de champ à canal de longueur extrêmement courte Dans ce transistor, qui est réalisé sur un substrat 1 et comporte une région de source 2 et une région de drain 3, un isolant 4 et une première électrode de porte 5, cette dernière recouvre la région semi-conductrice entre la source et le drain 2 et 3 formée dans une zone 7 jouxtant directement la région de source 2 sur laquelle il est prévu une seconde électrode de porte 8 isolée de la première électrode 5 par une couche isolante 6 ainsi qu'une source de tension de polarisation UG1 et une borne 10 d'application d'une tension de commande UG2 . Application notamment aux circuits à transistors à haute fréquence et à haute tension.
FR7819005A 1977-06-30 1978-06-26 Transistor a effet de champ a canal de longueur extremement courte Granted FR2396414A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772729656 DE2729656A1 (de) 1977-06-30 1977-06-30 Feldeffekttransistor mit extrem kurzer kanallaenge

Publications (2)

Publication Number Publication Date
FR2396414A1 true FR2396414A1 (fr) 1979-01-26
FR2396414B1 FR2396414B1 (fr) 1982-12-17

Family

ID=6012850

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7819005A Granted FR2396414A1 (fr) 1977-06-30 1978-06-26 Transistor a effet de champ a canal de longueur extremement courte

Country Status (5)

Country Link
US (1) US4306352A (fr)
JP (1) JPS5414177A (fr)
DE (1) DE2729656A1 (fr)
FR (1) FR2396414A1 (fr)
GB (1) GB1586392A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019758A1 (fr) * 1979-05-28 1980-12-10 Siemens Aktiengesellschaft Transistor à effet de champ à canal court et procédé pour sa fabrication

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
US4472821A (en) * 1982-05-03 1984-09-18 General Electric Company Dynamic shift register utilizing CMOS dual gate transistors
US4468574A (en) * 1982-05-03 1984-08-28 General Electric Company Dual gate CMOS transistor circuits having reduced electrode capacitance
US4672423A (en) * 1982-09-30 1987-06-09 International Business Machines Corporation Voltage controlled resonant transmission semiconductor device
NL8204855A (nl) * 1982-12-16 1984-07-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode en werkwijze ter vervaardiging daarvan.
US5243212A (en) * 1987-12-22 1993-09-07 Siliconix Incorporated Transistor with a charge induced drain extension
US5108940A (en) * 1987-12-22 1992-04-28 Siliconix, Inc. MOS transistor with a charge induced drain extension
US5264380A (en) * 1989-12-18 1993-11-23 Motorola, Inc. Method of making an MOS transistor having improved transconductance and short channel characteristics
JPH03280071A (ja) * 1990-03-29 1991-12-11 Konica Corp 印刷版の形成方法
US5900657A (en) * 1997-05-19 1999-05-04 National Semiconductor Corp. MOS switch that reduces clock feed through in a switched capacitor circuit
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
US9761722B1 (en) 2016-06-24 2017-09-12 International Business Machines Corporation Isolation of bulk FET devices with embedded stressors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1505959A (fr) * 1965-12-22 1967-12-15 Philips Nv Dispositif semi-conducteur
FR1511783A (fr) * 1966-04-15 1968-02-02 Philco Ford Corp Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples
DE2019683A1 (de) * 1969-04-28 1970-11-05 Itt Ind Gmbh Deutsche Isolierschicht-Feldeffekttransistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3454844A (en) * 1966-07-01 1969-07-08 Hughes Aircraft Co Field effect device with overlapping insulated gates
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3912545A (en) * 1974-05-13 1975-10-14 Motorola Inc Process and product for making a single supply N-channel silicon gate device
JPS5154789A (fr) * 1974-11-09 1976-05-14 Nippon Electric Co
US4037308A (en) * 1975-03-21 1977-07-26 Bell Telephone Laboratories, Incorporated Methods for making transistor structures
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
JPS51118969A (en) * 1975-04-11 1976-10-19 Fujitsu Ltd Manufacturing method of semiconductor memory
US4091278A (en) * 1976-08-18 1978-05-23 Honeywell Information Systems Inc. Time-independent circuit for multiplying and adding charge

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1505959A (fr) * 1965-12-22 1967-12-15 Philips Nv Dispositif semi-conducteur
FR1511783A (fr) * 1966-04-15 1968-02-02 Philco Ford Corp Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples
DE2019683A1 (de) * 1969-04-28 1970-11-05 Itt Ind Gmbh Deutsche Isolierschicht-Feldeffekttransistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV8093/68 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019758A1 (fr) * 1979-05-28 1980-12-10 Siemens Aktiengesellschaft Transistor à effet de champ à canal court et procédé pour sa fabrication

Also Published As

Publication number Publication date
JPS5414177A (en) 1979-02-02
FR2396414B1 (fr) 1982-12-17
DE2729656A1 (de) 1979-01-11
GB1586392A (en) 1981-03-18
US4306352A (en) 1981-12-22

Similar Documents

Publication Publication Date Title
FR2396414A1 (fr) Transistor a effet de champ a canal de longueur extremement courte
FR2379168A1 (fr) Transistor a effet de champ mis possedant une courte longueur de canal
GB1110391A (en) Field effect transistor
GB1526679A (en) Method of making a field effect transistor device
JPS61187224A (ja) シリコン基板上に電界効果装置を製造する方法
GB1224335A (en) N-channel field effect transistor
FR2433240A1 (fr) Transistor a effet de champ mos pour des tensions assez elevees
FR2396415A1 (fr) Transistor a effet de champ a canal de longueur extremement courte
GB1316442A (en) Semiconductor devices
KR900000584B1 (ko) 반도체 집적회로 장치
JPH0590587A (ja) 絶縁ゲート型電界効果トランジスタ
GB1476790A (en) Semiconductor device including an insulated gate field effect transistor and method for its manufacture
GB2064866A (en) Field effect semiconductor device
FR2396416A1 (fr) Transistor a effet de champ a canal de courte longueur
US4546371A (en) Semiconductor device having an improved dual-gate field effect transistor
KR850005162A (ko) 전계효과형 트랜지스터
US4136352A (en) Field-effect structures
JPS56110264A (en) High withstand voltage mos transistor
EP0335632A3 (fr) Transistor en couche mince à fort courant
JPS626352B2 (fr)
JP2695843B2 (ja) 半導体装置
JP3143102B2 (ja) Ｍｉｓ型トランジスタ
JPH0329326A (ja) 接合型電界効果型トランジスタ
JPS63142851A (ja) 半導体装置
JP2728070B2 (ja) 電界効果トランジスタ

Legal Events

Date Code Title Description
ST Notification of lapse