EP3549155A4 - Traitement et fabrication de matériaux de faibles dimensions supportant à la fois l'auto-thermalisation et l'auto-localisation - Google Patents

Traitement et fabrication de matériaux de faibles dimensions supportant à la fois l'auto-thermalisation et l'auto-localisation Download PDF

Info

Publication number: EP3549155A4
Authority: EP; European Patent Office
Prior art keywords: self; thermalization; localization; manufacturing; support
Prior art date: 2017-03-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

EP17899703.7A

Other languages

German (de)

English (en)

Other versions

EP3549155A2 (fr

Inventor

Patrick Curran

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Seminuclear Inc

Original Assignee

Seminuclear Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-03-15

Filing date

2017-11-30

Publication date

2020-09-30

2017-11-30 Application filed by Seminuclear Inc filed Critical Seminuclear Inc

2019-10-09 Publication of EP3549155A2 publication Critical patent/EP3549155A2/fr

2020-09-30 Publication of EP3549155A4 publication Critical patent/EP3549155A4/fr

Status Pending legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
- H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Chemical & Material Sciences (AREA)
Inorganic Chemistry (AREA)
Silicon Compounds (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Particle Accelerators (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Photovoltaic Devices (AREA)
Recrystallisation Techniques (AREA)

EP17899703.7A 2017-03-15 2017-11-30 Traitement et fabrication de matériaux de faibles dimensions supportant à la fois l'auto-thermalisation et l'auto-localisation Pending EP3549155A4 (fr)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US201762471815P	2017-03-15	2017-03-15
US201762591848P	2017-11-29	2017-11-29
PCT/US2017/064020 WO2018164746A2 (fr)	2016-11-29	2017-11-30	Traitement et fabrication de matériaux de faibles dimensions supportant à la fois l'auto-thermalisation et l'auto-localisation

Publications (2)

Publication Number	Publication Date
EP3549155A2 EP3549155A2 (fr)	2019-10-09
EP3549155A4 true EP3549155A4 (fr)	2020-09-30

Family

ID=68407930

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP17899703.7A Pending EP3549155A4 (fr)	2017-03-15	2017-11-30	Traitement et fabrication de matériaux de faibles dimensions supportant à la fois l'auto-thermalisation et l'auto-localisation

Country Status (7)

Country	Link
EP (1)	EP3549155A4 (fr)
JP (1)	JP7250340B2 (fr)
KR (1)	KR102373619B1 (fr)
CN (1)	CN110431652B (fr)
CA (1)	CA3045318A1 (fr)
IL (1)	IL266966B2 (fr)
WO (1)	WO2018164746A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI754180B (zh) *	2018-10-29	2022-02-01	美商應用材料股份有限公司	用於形成薄膜的處理腔室與方法
CN111470577A (zh) *	2020-04-15	2020-07-31	苏州正奥水生态技术研究有限公司	一种污水处理光量子载体及其制备方法和使用方法
CN115903279B (zh) *	2022-10-12	2023-10-03	北京大学	一种基于同位素工程进行光谱发射率调控的方法及其应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6479919B1 (en) *	2001-04-09	2002-11-12	Terrence L. Aselage	Beta cell device using icosahedral boride compounds
US20150206940A1 (en) *	2012-08-02	2015-07-23	University-Industry Cooperation Group Of Kyung Hee University	Semiconductor device and method for producing same
US20160351286A1 (en) *	2015-05-28	2016-12-01	SemiNuclear, Inc.	Composition and method for making picocrystalline artificial carbon atoms

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3432539A (en) *	1965-06-30	1969-03-11	Du Pont	Icosahedral dodecahydrododecaborane derivatives and their preparation
US4818625A (en) *	1985-06-24	1989-04-04	Lockheed Missiles & Space Company, Inc.	Boron-silicon-hydrogen alloy films
US5872368A (en) *	1995-11-30	1999-02-16	The United States Of America As Represented By The Secretary Of The Navy	Method of controlling a super conductor
US6025611A (en) *	1996-09-20	2000-02-15	The Board Of Regents Of The University Of Nebraska	Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
JP2004123720A (ja) *	2002-09-11	2004-04-22	Sony Corp	分子素子、分子組織体、整流素子、整流方法、センサ素子、スイッチ素子、回路素子、論理回路素子、演算素子および情報処理素子
KR100683401B1 (ko) *	2005-08-11	2007-02-15	동부일렉트로닉스 주식회사	에피층을 이용한 반도체 장치 및 그 제조방법
US7795735B2 (en) *	2007-03-21	2010-09-14	Taiwan Semiconductor Manufacturing Co., Ltd.	Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
US7915643B2 (en) *	2007-09-17	2011-03-29	Transphorm Inc.	Enhancement mode gallium nitride power devices
US8779462B2 (en) *	2008-05-19	2014-07-15	Infineon Technologies Ag	High-ohmic semiconductor substrate and a method of manufacturing the same
KR101245037B1 (ko) *	2009-06-10	2013-03-18	씬실리콘 코포레이션	반도체 다층 스택을 구비한 광전지 모듈 및 광전지 모듈의 제작 방법
US8344337B2 (en) *	2010-04-21	2013-01-01	Axcelis Technologies, Inc.	Silaborane implantation processes
JP6544807B2 (ja) *	2014-06-03	2019-07-17	株式会社日本製鋼所	ゲッタリング層を持つ半導体の製造方法、半導体装置の製造方法および半導体装置
US9972489B2 (en) *	2015-05-28	2018-05-15	SemiNuclear, Inc.	Composition and method for making picocrystalline artificial borane atoms

2017
- 2017-11-30 JP JP2019548545A patent/JP7250340B2/ja active Active
- 2017-11-30 EP EP17899703.7A patent/EP3549155A4/fr active Pending
- 2017-11-30 CA CA3045318A patent/CA3045318A1/fr active Pending
- 2017-11-30 WO PCT/US2017/064020 patent/WO2018164746A2/fr not_active Ceased
- 2017-11-30 IL IL266966A patent/IL266966B2/en unknown
- 2017-11-30 CN CN201780084888.3A patent/CN110431652B/zh active Active
- 2017-11-30 KR KR1020197018946A patent/KR102373619B1/ko active Active

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6479919B1 (en) *	2001-04-09	2002-11-12	Terrence L. Aselage	Beta cell device using icosahedral boride compounds
US20150206940A1 (en) *	2012-08-02	2015-07-23	University-Industry Cooperation Group Of Kyung Hee University	Semiconductor device and method for producing same
US20160351286A1 (en) *	2015-05-28	2016-12-01	SemiNuclear, Inc.	Composition and method for making picocrystalline artificial carbon atoms

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
COREY MELNICK ET AL: "Phonovoltaic. I. Harvesting hot optical phonons in a nanoscale p - n junction", PHYSICAL REVIEW B, vol. 93, no. 9, 4 March 2016 (2016-03-04), XP055690570, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.93.094302 *
JING LIU ET AL: "The local structure of transition metal doped semiconducting boron carbides", JOURNAL OF PHYSICS D: APPLIED PHYSICS, INSTITUTE OF PHYSICS PUBLISHING LTD, GB, vol. 43, no. 8, 3 March 2010 (2010-03-03), pages 85403, XP020171369, ISSN: 0022-3727 *
KUMAR VOBULAPURAM RAMESH ET AL: "Graphene Based On-Chip Interconnects and TSVs : Prospects and Challenges", IEEE NANOTECHNOLOGY MAGAZINE, IEEE, USA, vol. 8, no. 4, 1 December 2014 (2014-12-01), pages 14 - 20, XP011564671, ISSN: 1932-4510, [retrieved on 20141118], DOI: 10.1109/MNANO.2014.2355275 *
NAN LIU ET AL: "Large-Area, Transparent, and Flexible Infrared Photodetector Fabricated Using P-N Junctions Formed by N-Doping Chemical Vapor Deposition Grown Graphene", NANO LETTERS, vol. 14, no. 7, 9 July 2014 (2014-07-09), US, pages 3702 - 3708, XP055723189, ISSN: 1530-6984, DOI: 10.1021/nl500443j *
S. YU. RYBAKOV ET AL: "Oxygen Effect on the Stability of PECVD Boron-Carbon Films", JOURNAL DE PHYSIQUE IV, vol. 05, no. C5, 1 June 1995 (1995-06-01), FR, pages C5 - 921, XP055689624, ISSN: 1155-4339, DOI: 10.1051/jphyscol:19955109 *
SHIOYA HIROKI ET AL: "Gate tunable non-linear currents in bilayer graphene diodes", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 100, no. 3, 16 January 2012 (2012-01-16), pages 33113 - 33113, XP012156888, ISSN: 0003-6951, [retrieved on 20120118], DOI: 10.1063/1.3676441 *
YI ZHANG: "Epitaxial growth of icosahedral boron arsenide on silicon carbide substrates: Improved process conditions and electrical properties", DISSERTATION, 1 January 2011 (2011-01-01), XP055554015, ISBN: 978-1-267-14614-4, Retrieved from the Internet <URL:http://krex.k-state.edu/dspace/bitstream/handle/2097/13122/YiZhang2011.pdf?sequence=3&isAllowed=y> [retrieved on 20190208] *

Also Published As

Publication number	Publication date
JP7250340B2 (ja)	2023-04-03
KR20190126765A (ko)	2019-11-12
IL266966B2 (en)	2024-03-01
CN110431652A (zh)	2019-11-08
IL266966B1 (en)	2023-11-01
KR102373619B1 (ko)	2022-03-15
IL266966A (en)	2019-07-31
CN110431652B (zh)	2023-12-29
CA3045318A1 (fr)	2018-09-13
WO2018164746A3 (fr)	2018-12-06
JP2020515057A (ja)	2020-05-21
WO2018164746A2 (fr)	2018-09-13
EP3549155A2 (fr)	2019-10-09

Publication	Publication Date	Title
EP3548507A4 (fr)	2020-07-15	Organoïdes du côlon et leurs procédés de préparation et d'utilisation
EP3890977A4 (fr)	2022-08-24	Charges modifiées pour fabrication additive de verre
EP3585364A4 (fr)	2020-02-26	Structures de particules-gouttes et procédé pour les préparer et les utiliser
EP3689322A4 (fr)	2020-10-21	Procédé de préparation de matériau dentaire ayant des gradients de facteur de transmission et de couleur et produit préparé ainsi
EP3515662A4 (fr)	2020-06-17	Articles abrasifs non tissés ayant des particules abrasives à orientation électrostatique et leurs procédés de fabrication
EP3601196A4 (fr)	2022-04-06	Formes volumétriques de sic et procédés de formation de lingots
EP3572401A4 (fr)	2020-08-26	Inhibiteur de ask1, sa méthode de préparation et son utilisation
EP3551365A4 (fr)	2020-09-02	Fabrication additive avec alimentation en matériau assoupli à la chaleur
EP3542214A4 (fr)	2020-07-08	Dispositifs de diffraction à cristaux liquides à motif nanométrique et leurs procédés de fabrication
EP3553180A4 (fr)	2020-08-12	Méthode de construction d'une banque de séquençage de cellule unique et son utilisation
EP3509793A4 (fr)	2020-05-06	Articles abrasifs présentant une pluralité de parties et leurs procédés de formation
EP3553824A4 (fr)	2020-04-08	Élément de photodétection et son procédé de fabrication
EP3250751C0 (fr)	2024-06-05	Matériaux fibreux thermoplastiques et procédé de production
EP3368556C0 (fr)	2024-04-10	Nouveaux polypeptides présentant une meilleure stabilité et procédés de préparation et d'utilisation associés
EP3307696C0 (fr)	2024-07-31	Produits en fibrociment enduits et leurs procédés de production
EP3635114C0 (fr)	2024-11-06	Création et utilisation d'acides nucléiques guides
EP3681491A4 (fr)	2021-06-30	Procédés pour la fabrication et l'utilisation d'endoxifène
EP3632958A4 (fr)	2020-12-30	Procédé de production de polyol de biopolyéther, polyol de biopolyéther, et résine biopolyuréthane
EP3471892A4 (fr)	2020-03-11	Pulvérisateurs à gâchette à durée prolongée et leurs procédés de fabrication
EP3612637A4 (fr)	2021-01-27	Procédé de production de protéines à double fonction et ses dérivés
EP3670459C0 (fr)	2025-05-21	Composition chimique pour la production de particules sphériques en verre creux présentant une résistance élevée à la compression
EP3436081A4 (fr)	2019-07-24	Compositions de microarn, leurs procédés de préparation et d'utilisation
EP3677617A4 (fr)	2020-09-09	Procédé de préparation de polysulfure de phénylène et polysulfure de phénylène préparé au moyen de ce dernier
EP3667798A4 (fr)	2020-12-30	Ensemble d'électrodes et son procédé de fabrication
EP3584050A4 (fr)	2020-12-30	Matériau de construction et procédé de fabrication d'un matériau de construction

Legal Events

Date	Code	Title	Description
2018-09-17	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE
2019-09-06	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2019-09-06	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE
2019-10-09	17P	Request for examination filed	Effective date: 20190626
2019-10-09	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
2019-10-09	AX	Request for extension of the european patent	Extension state: BA ME
2020-03-04	DAV	Request for validation of the european patent (deleted)
2020-03-04	DAX	Request for extension of the european patent (deleted)
2020-06-17	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 29/861 20060101ALI20200508BHEP Ipc: H01L 21/033 20060101ALI20200508BHEP Ipc: H01L 31/0256 20060101ALI20200508BHEP Ipc: H01L 21/02 20060101AFI20200508BHEP Ipc: H01L 29/267 20060101ALI20200508BHEP Ipc: H01L 31/02 20060101ALI20200508BHEP Ipc: H01L 49/00 20060101ALI20200508BHEP Ipc: H01L 31/0264 20060101ALI20200508BHEP Ipc: H01L 31/04 20140101ALI20200508BHEP Ipc: H01L 35/22 20060101ALN20200508BHEP Ipc: H01L 31/036 20060101ALI20200508BHEP Ipc: H01L 31/0368 20060101ALI20200508BHEP
2020-09-30	A4	Supplementary search report drawn up and despatched	Effective date: 20200828
2020-09-30	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 31/0256 20060101ALI20200824BHEP Ipc: H01L 21/02 20060101AFI20200824BHEP Ipc: H01L 49/00 20060101ALI20200824BHEP Ipc: H01L 31/0264 20060101ALI20200824BHEP Ipc: H01L 31/02 20060101ALI20200824BHEP Ipc: H01L 31/036 20060101ALI20200824BHEP Ipc: H01L 35/22 20060101ALN20200824BHEP Ipc: H01L 31/0368 20060101ALI20200824BHEP Ipc: H01L 31/04 20140101ALI20200824BHEP Ipc: H01L 29/267 20060101ALI20200824BHEP Ipc: H01L 29/861 20060101ALI20200824BHEP Ipc: H01L 21/033 20060101ALI20200824BHEP
2022-03-11	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: EXAMINATION IS IN PROGRESS
2022-04-13	17Q	First examination report despatched	Effective date: 20220315