Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N99/00—Subject matter not provided for in other groups of this subclass
  • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
  • H10D62/82—Heterojunctions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D8/00—Diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
  • H10N10/80—Constructional details
  • H10N10/85—Thermoelectric active materials
  • H10N10/851—Thermoelectric active materials comprising inorganic compositions
  • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
  • H10N10/80—Constructional details
  • H10N10/85—Thermoelectric active materials
  • H10N10/851—Thermoelectric active materials comprising inorganic compositions
  • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Landscapes

• Chemical & Material Sciences (AREA)
• Inorganic Chemistry (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Silicon Compounds (AREA)
• Particle Accelerators (AREA)
• Recrystallisation Techniques (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)
• Photovoltaic Devices (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)

Applications Claiming Priority (4)

Publications (3)

Family

ID=68407930

Family Applications (1)

Country Status (7)

Families Citing this family (3)

Family Cites Families (16)

• 2017
  • 2017-11-30 EP EP17899703.7A patent/EP3549155A4/en active Pending
  • 2017-11-30 JP JP2019548545A patent/JP7250340B2/en active Active
  • 2017-11-30 KR KR1020197018946A patent/KR102373619B1/en active Active
  • 2017-11-30 CN CN201780084888.3A patent/CN110431652B/en active Active
  • 2017-11-30 WO PCT/US2017/064020 patent/WO2018164746A2/en not_active Ceased
  • 2017-11-30 CA CA3045318A patent/CA3045318A1/en active Pending
  • 2017-11-30 IL IL266966A patent/IL266966B2/en unknown

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