EP3549155A4 - PROCESS AND MANUFACTURING OF LOW-DIMENSIONAL MATERIALS WITH THE SUPPORT OF BOTH SELF-THERMALIZATION AND SELF-LOCALIZATION - Google Patents

PROCESS AND MANUFACTURING OF LOW-DIMENSIONAL MATERIALS WITH THE SUPPORT OF BOTH SELF-THERMALIZATION AND SELF-LOCALIZATION Download PDF

Info

Publication number: EP3549155A4
Authority: EP; European Patent Office
Prior art keywords: self; thermalization; localization; manufacturing; support
Prior art date: 2017-03-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

EP17899703.7A

Other languages

German (de)

French (fr)

Other versions

EP3549155A2 (en

Inventor

Patrick Curran

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Seminuclear Inc

Original Assignee

Seminuclear Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-03-15

Filing date

2017-11-30

Publication date

2020-09-30

2017-11-30 Application filed by Seminuclear Inc filed Critical Seminuclear Inc

2019-10-09 Publication of EP3549155A2 publication Critical patent/EP3549155A2/en

2020-09-30 Publication of EP3549155A4 publication Critical patent/EP3549155A4/en

Status Pending legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
- H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Chemical & Material Sciences (AREA)
Inorganic Chemistry (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Silicon Compounds (AREA)
Particle Accelerators (AREA)
Recrystallisation Techniques (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Photovoltaic Devices (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)

EP17899703.7A 2017-03-15 2017-11-30 PROCESS AND MANUFACTURING OF LOW-DIMENSIONAL MATERIALS WITH THE SUPPORT OF BOTH SELF-THERMALIZATION AND SELF-LOCALIZATION Pending EP3549155A4 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US201762471815P	2017-03-15	2017-03-15
US201762591848P	2017-11-29	2017-11-29
PCT/US2017/064020 WO2018164746A2 (en)	2016-11-29	2017-11-30	Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Publications (2)

Publication Number	Publication Date
EP3549155A2 EP3549155A2 (en)	2019-10-09
EP3549155A4 true EP3549155A4 (en)	2020-09-30

Family

ID=68407930

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP17899703.7A Pending EP3549155A4 (en)	2017-03-15	2017-11-30	PROCESS AND MANUFACTURING OF LOW-DIMENSIONAL MATERIALS WITH THE SUPPORT OF BOTH SELF-THERMALIZATION AND SELF-LOCALIZATION

Country Status (7)

Country	Link
EP (1)	EP3549155A4 (en)
JP (1)	JP7250340B2 (en)
KR (1)	KR102373619B1 (en)
CN (1)	CN110431652B (en)
CA (1)	CA3045318A1 (en)
IL (1)	IL266966B2 (en)
WO (1)	WO2018164746A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US11220747B2 (en) *	2018-10-29	2022-01-11	Applied Materials, Inc.	Complementary pattern station designs
CN111470577A (en) *	2020-04-15	2020-07-31	苏州正奥水生态技术研究有限公司	Sewage treatment photon carrier and preparation method and use method thereof
CN115903279B (en) *	2022-10-12	2023-10-03	北京大学	A method and application of spectral emissivity control based on isotope engineering

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6479919B1 (en) *	2001-04-09	2002-11-12	Terrence L. Aselage	Beta cell device using icosahedral boride compounds
US20150206940A1 (en) *	2012-08-02	2015-07-23	University-Industry Cooperation Group Of Kyung Hee University	Semiconductor device and method for producing same
US20160351286A1 (en) *	2015-05-28	2016-12-01	SemiNuclear, Inc.	Composition and method for making picocrystalline artificial carbon atoms

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3432539A (en) *	1965-06-30	1969-03-11	Du Pont	Icosahedral dodecahydrododecaborane derivatives and their preparation
US4818625A (en) *	1985-06-24	1989-04-04	Lockheed Missiles & Space Company, Inc.	Boron-silicon-hydrogen alloy films
US5872368A (en) *	1995-11-30	1999-02-16	The United States Of America As Represented By The Secretary Of The Navy	Method of controlling a super conductor
US6025611A (en) *	1996-09-20	2000-02-15	The Board Of Regents Of The University Of Nebraska	Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
JP2004123720A (en) *	2002-09-11	2004-04-22	Sony Corp	Molecular element, molecular organization, rectifying element, rectifying method, sensor element, switching element, circuit element, logic circuit element, arithmetic element and information processing element
KR100683401B1 (en) *	2005-08-11	2007-02-15	동부일렉트로닉스 주식회사	Semiconductor Device Using Epilayer and Manufacturing Method Thereof
US7795735B2 (en) *	2007-03-21	2010-09-14	Taiwan Semiconductor Manufacturing Co., Ltd.	Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
US7915643B2 (en) *	2007-09-17	2011-03-29	Transphorm Inc.	Enhancement mode gallium nitride power devices
US8779462B2 (en) *	2008-05-19	2014-07-15	Infineon Technologies Ag	High-ohmic semiconductor substrate and a method of manufacturing the same
WO2010144421A2 (en) *	2009-06-10	2010-12-16	Thinsilicon Corporation	Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
US8344337B2 (en) *	2010-04-21	2013-01-01	Axcelis Technologies, Inc.	Silaborane implantation processes
JP6544807B2 (en) *	2014-06-03	2019-07-17	株式会社日本製鋼所	Method of manufacturing semiconductor having gettering layer, method of manufacturing semiconductor device, and semiconductor device
US9972489B2 (en) *	2015-05-28	2018-05-15	SemiNuclear, Inc.	Composition and method for making picocrystalline artificial borane atoms

2017
- 2017-11-30 EP EP17899703.7A patent/EP3549155A4/en active Pending
- 2017-11-30 JP JP2019548545A patent/JP7250340B2/en active Active
- 2017-11-30 KR KR1020197018946A patent/KR102373619B1/en active Active
- 2017-11-30 CN CN201780084888.3A patent/CN110431652B/en active Active
- 2017-11-30 WO PCT/US2017/064020 patent/WO2018164746A2/en not_active Ceased
- 2017-11-30 CA CA3045318A patent/CA3045318A1/en active Pending
- 2017-11-30 IL IL266966A patent/IL266966B2/en unknown

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6479919B1 (en) *	2001-04-09	2002-11-12	Terrence L. Aselage	Beta cell device using icosahedral boride compounds
US20150206940A1 (en) *	2012-08-02	2015-07-23	University-Industry Cooperation Group Of Kyung Hee University	Semiconductor device and method for producing same
US20160351286A1 (en) *	2015-05-28	2016-12-01	SemiNuclear, Inc.	Composition and method for making picocrystalline artificial carbon atoms

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
COREY MELNICK ET AL: "Phonovoltaic. I. Harvesting hot optical phonons in a nanoscale p - n junction", PHYSICAL REVIEW B, vol. 93, no. 9, 4 March 2016 (2016-03-04), XP055690570, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.93.094302 *
JING LIU ET AL: "The local structure of transition metal doped semiconducting boron carbides", JOURNAL OF PHYSICS D: APPLIED PHYSICS, INSTITUTE OF PHYSICS PUBLISHING LTD, GB, vol. 43, no. 8, 3 March 2010 (2010-03-03), pages 85403, XP020171369, ISSN: 0022-3727 *
KUMAR VOBULAPURAM RAMESH ET AL: "Graphene Based On-Chip Interconnects and TSVs : Prospects and Challenges", IEEE NANOTECHNOLOGY MAGAZINE, IEEE, USA, vol. 8, no. 4, 1 December 2014 (2014-12-01), pages 14 - 20, XP011564671, ISSN: 1932-4510, [retrieved on 20141118], DOI: 10.1109/MNANO.2014.2355275 *
NAN LIU ET AL: "Large-Area, Transparent, and Flexible Infrared Photodetector Fabricated Using P-N Junctions Formed by N-Doping Chemical Vapor Deposition Grown Graphene", NANO LETTERS, vol. 14, no. 7, 9 July 2014 (2014-07-09), US, pages 3702 - 3708, XP055723189, ISSN: 1530-6984, DOI: 10.1021/nl500443j *
S. YU. RYBAKOV ET AL: "Oxygen Effect on the Stability of PECVD Boron-Carbon Films", JOURNAL DE PHYSIQUE IV, vol. 05, no. C5, 1 June 1995 (1995-06-01), FR, pages C5 - 921, XP055689624, ISSN: 1155-4339, DOI: 10.1051/jphyscol:19955109 *
SHIOYA HIROKI ET AL: "Gate tunable non-linear currents in bilayer graphene diodes", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 100, no. 3, 16 January 2012 (2012-01-16), pages 33113 - 33113, XP012156888, ISSN: 0003-6951, [retrieved on 20120118], DOI: 10.1063/1.3676441 *
YI ZHANG: "Epitaxial growth of icosahedral boron arsenide on silicon carbide substrates: Improved process conditions and electrical properties", DISSERTATION, 1 January 2011 (2011-01-01), XP055554015, ISBN: 978-1-267-14614-4, Retrieved from the Internet <URL:http://krex.k-state.edu/dspace/bitstream/handle/2097/13122/YiZhang2011.pdf?sequence=3&isAllowed=y> [retrieved on 20190208] *

Also Published As

Publication number	Publication date
CA3045318A1 (en)	2018-09-13
WO2018164746A2 (en)	2018-09-13
WO2018164746A3 (en)	2018-12-06
KR102373619B1 (en)	2022-03-15
IL266966A (en)	2019-07-31
IL266966B1 (en)	2023-11-01
CN110431652B (en)	2023-12-29
IL266966B2 (en)	2024-03-01
JP2020515057A (en)	2020-05-21
CN110431652A (en)	2019-11-08
KR20190126765A (en)	2019-11-12
EP3549155A2 (en)	2019-10-09
JP7250340B2 (en)	2023-04-03

Publication	Publication Date	Title
EP3548507A4 (en)	2020-07-15	COLON ORGANOIDS AND METHOD FOR THE PRODUCTION AND USE THEREOF
EP3890977A4 (en)	2022-08-24	CONSTRUCTED STARTING MATERIALS FOR THE GENERATIVE MANUFACTURING OF GLASS
EP3585364A4 (en)	2020-02-26	PARTICLE DROP STRUCTURES AND METHOD FOR THE PRODUCTION AND USE THEREOF
EP3689322A4 (en)	2020-10-21	PROCESS FOR MANUFACTURING DENTAL MATERIAL WITH PERMEABILITY AND COLOR GRADIENTS AND THE PRODUCT MANUFACTURED THIS
EP3515662A4 (en)	2020-06-17	FLEECE GRINDING ARTICLES WITH ELECTROSTATICALLY ALIGNED GRINDING PARTICLES AND METHOD FOR THE PRODUCTION THEREOF
EP3601196A4 (en)	2022-04-06	VOLUMETRIC FORMS OF SIC AND PROCESSES FOR THE PRODUCTION OF MONOCRYSTAL BODIES
EP3572401A4 (en)	2020-08-26	ASK1-INHIBITOR AND THE MANUFACTURING PROCESS AND USE OF IT
EP3551365A4 (en)	2020-09-02	GENERATIVE MANUFACTURING WITH SUPPLY OF HEAT-ARC MATERIAL
EP3542214A4 (en)	2020-07-08	LIQUID CRYSTALLINE DIFFERENTIAL DEVICES WITH NANOSCALE STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF
EP3553180A4 (en)	2020-08-12	METHOD OF PREPARING SINGLE CELL SEQUENCING LIBRARIES AND THE USE OF THEREOF
EP3509793A4 (en)	2020-05-06	ABRASIVE ARTICLES WITH A VARIETY OF PARTS AND METHOD FOR THE PRODUCTION THEREOF
EP3553824A4 (en)	2020-04-08	PHOTODETECTING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
EP3368556C0 (en)	2024-04-10	NOVEL POLYPEPTIDES WITH IMPROVED PROTEOLYTIC STABILITY AND METHODS FOR THE PRODUCTION AND USE THEREOF
EP3307696C0 (en)	2024-07-31	COATED FIBER CEMENT PRODUCTS AND METHODS OF MANUFACTURING THE SAME
EP3635114C0 (en)	2024-11-06	PRODUCTION AND USE OF GUIDE NUCLEIC ACIDS
EP3681491A4 (en)	2021-06-30	PROCESS FOR MANUFACTURING AND USE OF ENDOXIFES
EP3552834A4 (en)	2020-07-08	SCREEN PLATE AND METHOD FOR THE PRODUCTION THEREOF
EP3632958A4 (en)	2020-12-30	PROCESS FOR THE PRODUCTION OF BIOPOLYETHERPOLYOL, BIOPOLYETHERPOLYOL AND BIOPOLYURETHANE RESIN
EP3612637A4 (en)	2021-01-27	PROCESS FOR THE PRODUCTION OF DUAL FUNCTION PROTEINS AND THEIR DERIVATIVES
EP3670459C0 (en)	2025-05-21	Chemical composition for the production of hollow spherical glass particles with high compressive strength
EP3436081A4 (en)	2019-07-24	MIKRORNA COMPOSITIONS AND METHOD FOR THE PRODUCTION AND USE THEREOF
EP3677617A4 (en)	2020-09-09	PROCESS FOR THE PRODUCTION OF POLYPHENYLENE SULFIDE AND POLYPHENYLENE SULFIDE PRODUCED WITH IT
EP3667798A4 (en)	2020-12-30	ELECTRODE ASSEMBLY AND METHOD OF MANUFACTURING THE ELECTRODE ASSEMBLY
EP3584050A4 (en)	2020-12-30	BUILDING MATERIAL AND METHOD OF MANUFACTURING THE BUILDING MATERIAL
EP3872116A4 (en)	2022-07-27	POLYAMIDE-10 WITH EXCELLENT MECHANICAL AND THERMAL PROPERTIES AND PROCESS FOR ITS PRODUCTION

Legal Events

Date	Code	Title	Description
2018-09-17	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE
2019-09-06	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2019-09-06	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE
2019-10-09	17P	Request for examination filed	Effective date: 20190626
2019-10-09	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
2019-10-09	AX	Request for extension of the european patent	Extension state: BA ME
2020-03-04	DAV	Request for validation of the european patent (deleted)
2020-03-04	DAX	Request for extension of the european patent (deleted)
2020-06-17	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 29/861 20060101ALI20200508BHEP Ipc: H01L 21/033 20060101ALI20200508BHEP Ipc: H01L 31/0256 20060101ALI20200508BHEP Ipc: H01L 21/02 20060101AFI20200508BHEP Ipc: H01L 29/267 20060101ALI20200508BHEP Ipc: H01L 31/02 20060101ALI20200508BHEP Ipc: H01L 49/00 20060101ALI20200508BHEP Ipc: H01L 31/0264 20060101ALI20200508BHEP Ipc: H01L 31/04 20140101ALI20200508BHEP Ipc: H01L 35/22 20060101ALN20200508BHEP Ipc: H01L 31/036 20060101ALI20200508BHEP Ipc: H01L 31/0368 20060101ALI20200508BHEP
2020-09-30	A4	Supplementary search report drawn up and despatched	Effective date: 20200828
2020-09-30	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 31/0256 20060101ALI20200824BHEP Ipc: H01L 21/02 20060101AFI20200824BHEP Ipc: H01L 49/00 20060101ALI20200824BHEP Ipc: H01L 31/0264 20060101ALI20200824BHEP Ipc: H01L 31/02 20060101ALI20200824BHEP Ipc: H01L 31/036 20060101ALI20200824BHEP Ipc: H01L 35/22 20060101ALN20200824BHEP Ipc: H01L 31/0368 20060101ALI20200824BHEP Ipc: H01L 31/04 20140101ALI20200824BHEP Ipc: H01L 29/267 20060101ALI20200824BHEP Ipc: H01L 29/861 20060101ALI20200824BHEP Ipc: H01L 21/033 20060101ALI20200824BHEP
2022-03-11	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: EXAMINATION IS IN PROGRESS
2022-04-13	17Q	First examination report despatched	Effective date: 20220315