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IL266966B2 - Process and Manufacture of Low-Dimensional Materials Supporting Both Self-Thermalization and Self-Localization - Google Patents

Process and Manufacture of Low-Dimensional Materials Supporting Both Self-Thermalization and Self-Localization

Info

Publication number
IL266966B2
IL266966B2 IL266966A IL26696619A IL266966B2 IL 266966 B2 IL266966 B2 IL 266966B2 IL 266966 A IL266966 A IL 266966A IL 26696619 A IL26696619 A IL 26696619A IL 266966 B2 IL266966 B2 IL 266966B2
Authority
IL
Israel
Prior art keywords
boron
picocrystalline
oxysilaborane
energy
phonovoltaic
Prior art date
Application number
IL266966A
Other languages
English (en)
Hebrew (he)
Other versions
IL266966A (en
IL266966B1 (en
Original Assignee
Seminuclear Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2016/063933 external-priority patent/WO2018101905A1/fr
Application filed by Seminuclear Inc filed Critical Seminuclear Inc
Publication of IL266966A publication Critical patent/IL266966A/en
Publication of IL266966B1 publication Critical patent/IL266966B1/en
Publication of IL266966B2 publication Critical patent/IL266966B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Silicon Compounds (AREA)
  • Particle Accelerators (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IL266966A 2016-11-29 2017-11-30 Process and Manufacture of Low-Dimensional Materials Supporting Both Self-Thermalization and Self-Localization IL266966B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
PCT/US2016/063933 WO2018101905A1 (fr) 2016-11-29 2016-11-29 Composition et procédé de préparation d'atomes boranes artificiels picocristallins
US201762471815P 2017-03-15 2017-03-15
US201762591848P 2017-11-29 2017-11-29
PCT/US2017/064020 WO2018164746A2 (fr) 2016-11-29 2017-11-30 Traitement et fabrication de matériaux de faibles dimensions supportant à la fois l'auto-thermalisation et l'auto-localisation

Publications (3)

Publication Number Publication Date
IL266966A IL266966A (en) 2019-07-31
IL266966B1 IL266966B1 (en) 2023-11-01
IL266966B2 true IL266966B2 (en) 2024-03-01

Family

ID=68407930

Family Applications (1)

Application Number Title Priority Date Filing Date
IL266966A IL266966B2 (en) 2016-11-29 2017-11-30 Process and Manufacture of Low-Dimensional Materials Supporting Both Self-Thermalization and Self-Localization

Country Status (7)

Country Link
EP (1) EP3549155A4 (fr)
JP (1) JP7250340B2 (fr)
KR (1) KR102373619B1 (fr)
CN (1) CN110431652B (fr)
CA (1) CA3045318A1 (fr)
IL (1) IL266966B2 (fr)
WO (1) WO2018164746A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11220747B2 (en) * 2018-10-29 2022-01-11 Applied Materials, Inc. Complementary pattern station designs
CN111470577A (zh) * 2020-04-15 2020-07-31 苏州正奥水生态技术研究有限公司 一种污水处理光量子载体及其制备方法和使用方法
CN115903279B (zh) * 2022-10-12 2023-10-03 北京大学 一种基于同位素工程进行光谱发射率调控的方法及其应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US6479919B1 (en) * 2001-04-09 2002-11-12 Terrence L. Aselage Beta cell device using icosahedral boride compounds

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432539A (en) * 1965-06-30 1969-03-11 Du Pont Icosahedral dodecahydrododecaborane derivatives and their preparation
US4818625A (en) * 1985-06-24 1989-04-04 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US5872368A (en) * 1995-11-30 1999-02-16 The United States Of America As Represented By The Secretary Of The Navy Method of controlling a super conductor
JP2004123720A (ja) * 2002-09-11 2004-04-22 Sony Corp 分子素子、分子組織体、整流素子、整流方法、センサ素子、スイッチ素子、回路素子、論理回路素子、演算素子および情報処理素子
KR100683401B1 (ko) * 2005-08-11 2007-02-15 동부일렉트로닉스 주식회사 에피층을 이용한 반도체 장치 및 그 제조방법
US7795735B2 (en) * 2007-03-21 2010-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
US7915643B2 (en) * 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US8779462B2 (en) * 2008-05-19 2014-07-15 Infineon Technologies Ag High-ohmic semiconductor substrate and a method of manufacturing the same
WO2010144421A2 (fr) * 2009-06-10 2010-12-16 Thinsilicon Corporation Modules photovoltaïques et procédés de production de modules photovoltaïques comprenant plusieurs empilements de couches semi-conductrices
US8344337B2 (en) * 2010-04-21 2013-01-01 Axcelis Technologies, Inc. Silaborane implantation processes
KR101396432B1 (ko) * 2012-08-02 2014-05-21 경희대학교 산학협력단 반도체 소자 및 그의 제조 방법
JP6544807B2 (ja) * 2014-06-03 2019-07-17 株式会社日本製鋼所 ゲッタリング層を持つ半導体の製造方法、半導体装置の製造方法および半導体装置
US9972489B2 (en) * 2015-05-28 2018-05-15 SemiNuclear, Inc. Composition and method for making picocrystalline artificial borane atoms
US20160351286A1 (en) * 2015-05-28 2016-12-01 SemiNuclear, Inc. Composition and method for making picocrystalline artificial carbon atoms

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US6479919B1 (en) * 2001-04-09 2002-11-12 Terrence L. Aselage Beta cell device using icosahedral boride compounds

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YI ZHANG, EPITAXIAL GROWTH OF ICOSAHEDRAL BORON ARSENIDE ON SILICON CARBIDE SUBSTRATES: IMPROVED PROCESS CONDITIONS AND ELECTRICAL PROPERTIES, 1 January 2011 (2011-01-01) *

Also Published As

Publication number Publication date
EP3549155A4 (fr) 2020-09-30
CA3045318A1 (fr) 2018-09-13
WO2018164746A2 (fr) 2018-09-13
WO2018164746A3 (fr) 2018-12-06
KR102373619B1 (ko) 2022-03-15
IL266966A (en) 2019-07-31
IL266966B1 (en) 2023-11-01
CN110431652B (zh) 2023-12-29
JP2020515057A (ja) 2020-05-21
CN110431652A (zh) 2019-11-08
KR20190126765A (ko) 2019-11-12
EP3549155A2 (fr) 2019-10-09
JP7250340B2 (ja) 2023-04-03

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