| Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ... 2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022 | 50 | 2022 |
| Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2 CJ Dorow, T Schram, Q Smets, KP O’Brien, K Maxey, CC Lin, L Panarella, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 32 | 2023 |
| 300 mm MOCVD 2D CMOS materials for more (than) Moore scaling K Maxey, CH Naylor, KP O'Brien, A Penumatcha, A Oni, C Mokhtarzadeh, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 31 | 2022 |
| DrGaN: An integrated CMOS driver-GaN power switch technology on 300mm GaN-on-Si with E-mode GaN MOSHEMT and 3D monolithic Si PMOS HW Then, M Radosavljevic, S Bader, A Zubair, H Vora, N Nair, P Koirala, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 23 | 2023 |
| High mobility TMD NMOS and PMOS transistors and GAA architecture for ultimate CMOS scaling A Penumatcha, KP O’Brien, K Maxey, W Mortelmans, R Steinhardt, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 22 | 2023 |
| Record Performance in GAA 2D NMOS and PMOS using Monolayer MoS2 and WSe2 with scaled contact and gate length W Mortelmans, P Buragohain, C Rogan, A Kitamura, CJ Dorow, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 18 | 2024 |
| 2D materials in the BEOL CH Naylor, K Maxey, C Jezewski, KP O’Brien, AV Penumatcha, MS Kavrik, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 12 | 2023 |
| Gallium nitride (GaN) on silicon substrates for LEDs M Kane, N Arefin Nitride Semiconductor Light-Emitting Diodes (LEDs), 1st Edition Materials …, 2014 | 12 | 2014 |
| Gate Oxide Module Development for Scaled GAA 2D FETs Enabling SS< 75mV/d and Record Idmax> 900μA/μm at Lg< 50nm W Mortelmans, P Buragohain, A Kitamura, CJ Dorow, C Rogan, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | 8 | 2024 |
| Record PMOS WSe2 GAA Performance Using Contact Planarization, and Systematic Exploration of Manufacturable, High-Yield Contacts M Jaikissoon, P Buragohain, W Mortelmans, K Oguz, C Rogan, J Lux, ... 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits …, 2025 | 3 | 2025 |
| The Critical Role of 2D TMD Interfacial Layers for pFET Performance TD Ngo, X Wu, CJ Dorow, RK Grubbs, L Pinotti, D Cott, K Banerjee, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | 2 | 2024 |
| Int. Electron Devices Meeting (IEDM) CJ Dorow, T Schram, Q Smets, KP O’Brien, K Maxey, CC Lin, L Panarella, ... San Francisco, CA, USA, 2023 | 2 | 2023 |
| GaN growth on silicon based substrates using pulsed electron beam deposition (PED) process N Arefin, MH Kane, PR Larson, VR Whiteside, K Hossain, BN Pritchett, ... MRS Online Proceedings Library 1736 (1), 95-100, 2014 | 1 | 2014 |
| Characterization Methods of TMD Transistor Gate Dielectrics Targeting 1 nm EOT for 2-D CMOS Scaling C Dorow, A Konar, A Kitamura, A Penumatcha, S Lee, A Oni, CY Cheng, ... IEEE Transactions on Electron Devices, 2025 | | 2025 |
| Growth of wide bandgap semiconductors using pulsed electron beam deposition (ped) process N Arefin | | 2015 |
| Revised Physical Alpha-Power Law Model for Ultrathin Oxide MOSFETs N Arefin, F Ahmed, MR Rahman, QDM Khosru 2006 International Conference on Electrical and Computer Engineering, 514-517, 2006 | | 2006 |
Chelsey DorowUniversity of California San DiegoVerified email at physics.ucsd.edu
