| Electron scattering at surfaces and grain boundaries in Cu thin films and wires JS Chawla, F Gstrein, KP O’Brien, JS Clarke, D Gall Physical Review B—Condensed Matter and Materials Physics 84 (23), 235423, 2011 | 239 | 2011 |
| High-frequency electrical properties of individual and bundled carbon nanotubes JJ Plombon, KP O’Brien, F Gstrein, VM Dubin, Y Jiao Applied physics letters 90 (6), 2007 | 222 | 2007 |
| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 179 | 2018 |
| Low temperature synthesis of vertically aligned carbon nanotubes with electrical contact to metallic substrates enabled by thermal decomposition of the carbon feedstock GD Nessim, M Seita, KP O’Brien, AJ Hart, RK Bonaparte, RR Mitchell, ... Nano letters 9 (10), 3398-3405, 2009 | 175 | 2009 |
| Organometallic precursors for the chemical phase deposition of metal films in interconnect applications H Simka, J Dominguez, S Johnston, A Lavoie, K O'Brien US Patent 7,220,671, 2007 | 157 | 2007 |
| Flexible high‐conductivity carbon‐nanotube interconnects made by rolling and printing S Tawfick, K O'brien, AJ Hart small 5 (21), 2467-2473, 2009 | 154 | 2009 |
| Advancing 2D monolayer CMOS through contact, channel and interface engineering KP O'Brien, CJ Dorow, A Penumatcha, K Maxey, S Lee, CH Naylor, ... 2021 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2021 | 129 | 2021 |
| Process integration and future outlook of 2D transistors KP O’Brien, CH Naylor, C Dorow, K Maxey, AV Penumatcha, A Vyatskikh, ... nature communications 14 (1), 6400, 2023 | 124 | 2023 |
| Wide-frequency dielectric susceptibility measurements in glycerol N Menon, KP O'Brien, PK Dixon, L Wu, SR Nagel, BD Williams, JP Carini Journal of non-crystalline solids 141, 61-65, 1992 | 122 | 1992 |
| Precursor gas chemistry determines the crystallinity of carbon nanotubes synthesized at low temperature GD Nessim, M Seita, DL Plata, KP O’Brien, AJ Hart, ER Meshot, ... Carbon 49 (3), 804-810, 2011 | 90 | 2011 |
| Statistical characterization of Barkhausen noise KP O’Brien, MB Weissman Physical Review E 50 (5), 3446, 1994 | 85 | 1994 |
| Integrated circuit structures B Block, VR Rao, P Morrow, R Mehandru, D Ingerly, K Jun, K O'Brien, ... US Patent 10,872,820, 2020 | 83 | 2020 |
| Method of forming a selectively converted inter-layer dielectric using a porogen material GM Kloster, KP O'Brien, MD Goodner, J Leu, DH Gracias, LD Rockford, ... US Patent 7,018,918, 2006 | 81 | 2006 |
| Advancing monolayer 2-D nMOS and pMOS transistor integration from growth to van der Waals interface engineering for ultimate CMOS scaling C Dorow, K O’Brien, CH Naylor, S Lee, A Penumatcha, A Hsiao, T Tronic, ... IEEE Transactions on Electron Devices 68 (12), 6592-6598, 2021 | 79 | 2021 |
| Forming thin hard mask over air gap or porous dielectric GM Kloster, KP O'Brien, DH Gracias, HM Park, VS Ramachandrarao US Patent 7,238,604, 2007 | 73 | 2007 |
| The critical role of the underlayer material and thickness in growing vertically aligned carbon nanotubes and nanofibers on metallic substrates by chemical vapor deposition GD Nessim, D Acquaviva, M Seita, KP O'brien, CV Thompson Advanced Functional Materials 20 (8), 1306-1312, 2010 | 59 | 2010 |
| Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ... 2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022 | 50 | 2022 |
| Layer transferred ferroelectric memory devices KP O'Brien, BS Doyle, K Oguz, CC Kuo, ML Doczy, TK Indukuri US Patent App. 16/082,261, 2019 | 50 | 2019 |
| Connecting single molecule electrical measurements to ensemble spectroscopic properties for quantification of single-walled carbon nanotube separation WJ Kim, CY Lee, KP O’brien, JJ Plombon, JM Blackwell, MS Strano Journal of the American Chemical Society 131 (9), 3128-3129, 2009 | 48 | 2009 |
| Magnetic core inductor (MCI) structures for integrated voltage regulators AA Elsherbini, KP O'Brien, H Braunisch, K Bharath US Patent 9,129,817, 2015 | 47 | 2015 |
Uygar E. AvciComponents Research, Intel Corp.Verified email at intel.com
