| Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs JO Gonzalez, R Wu, S Jahdi, O Alatise IEEE Transactions on Industrial Electronics 67 (9), 7375-7385, 2019 | 222 | 2019 |
| Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby IEEE Transactions on Industrial Electronics 63 (2), 849-863, 2015 | 192 | 2015 |
| An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ... IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014 | 130 | 2014 |
| An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains S Jahdi, O Alatise, C Fisher, L Ran, P Mawby IEEE Journal of emerging and selected topics in Power Electronics 2 (3), 517-528, 2014 | 99 | 2014 |
| Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs P Alexakis, O Alatise, J Hu, S Jahdi, L Ran, PA Mawby IEEE Transactions on Electron Devices 61 (7), 2278-2286, 2014 | 83 | 2014 |
| The impact of temperature and switching rate on the dynamic characteristics of silicon carbide Schottky barrier diodes and MOSFETs S Jahdi, O Alatise, P Alexakis, L Ran, P Mawby IEEE Transactions on Industrial Electronics 62 (1), 163-171, 2014 | 83 | 2014 |
| Accurate analytical modeling for switching energy of PiN diodes reverse recovery S Jahdi, O Alatise, L Ran, P Mawby IEEE Transactions on Industrial Electronics 62 (3), 1461-1470, 2014 | 56 | 2014 |
| Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs R Bonyadi, O Alatise, S Jahdi, J Hu, JAO Gonzalez, L Ran, PA Mawby IEEE Transactions on Power Electronics 30 (12), 6978-6992, 2015 | 48 | 2015 |
| Grid integration of wind-solar hybrid renewables using AC/DC converters as DG power sources S Jahdi, LL Lai, D Nankoo 2011 World congress on sustainable technologies (WCST), 171-177, 2011 | 46 | 2011 |
| -Ga2O3 in Power Electronics Converters: Opportunities & Challenges S Jahdi, AS Kumar, M Deakin, PC Taylor, M Kuball IEEE Open Journal of Power Electronics 5, 554-564, 2024 | 35 | 2024 |
| Comparison of short circuit failure modes in sic planar mosfets, sic trench mosfets and sic cascode jfets E Bashar, R Wu, N Agbo, S Mendy, S Jahdi, JO Gonzalez, O Alatise 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 34 | 2021 |
| Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation S Jahdi, O Alatise, J Ortiz-Gonzalez, P Gammon, L Ran, P Mawby 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 34 | 2015 |
| Degradation analysis of planar, symmetrical and asymmetrical trench SiC MOSFETs under repetitive short circuit impulses R Yu, S Jahdi, P Mellor, L Liu, J Yang, C Shen, O Alatise, J Ortiz-Gonzalez IEEE Transactions on Power Electronics 38 (9), 10933-10946, 2023 | 31 | 2023 |
| Performance of parallel connected sic mosfets under short circuits conditions R Wu, S Mendy, N Agbo, JO Gonzalez, S Jahdi, O Alatise Energies 14 (20), 6834, 2021 | 29 | 2021 |
| Comparative analysis of false turn-on in silicon bipolar and SiC unipolar power devices S Jahdi, O Alatise, JO Gonzalez, L Ran, P Mawby 2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2239-2246, 2015 | 28 | 2015 |
| Current sharing of parallel sic mosfets under short circuit conditions R Wu, S Mendy, JO Gonzalez, S Jahdi, O Alatise 2021 23rd European Conference on Power Electronics and Applications (EPE'21 …, 2021 | 27 | 2021 |
| Measurement and simulation of short circuit current sharing under parallel connection: Sic mosfets and sic cascode jfets R Wu, SN Agbo, S Mendy, E Bashar, S Jahdi, O Gonzalez, O Alatise Microelectronics Reliability 126, 114271, 2021 | 25 | 2021 |
| Dynamic characterization of SiC and GaN devices with BTI stresses JO Gonzalez, M Hedayati, S Jahdi, BH Stark, O Alatise microelectronics reliability 100, 113389, 2019 | 25 | 2019 |
| Cryogenic characterization of commercial SiC power MOSFETs H Chen, PM Gammon, VA Shah, CA Fisher, CW Chan, S Jahdi, ... Materials Science Forum 821, 777-780, 2015 | 25 | 2015 |
| Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling R Bonyadi, O Alatise, S Jahdi, J Hu, L Evans, PA Mawby 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 443-448, 2014 | 25 | 2014 |
Layi Alatise,PhD, CEng, FIET, SMIEEE, Professor of Power Electronics, University of WarwickVerified email at warwick.ac.uk
