| Degradation analysis of planar, symmetrical and asymmetrical trench SiC MOSFETs under repetitive short circuit impulses R Yu, S Jahdi, P Mellor, L Liu, J Yang, C Shen, O Alatise, J Ortiz-Gonzalez IEEE Transactions on Power Electronics 38 (9), 10933-10946, 2023 | 31 | 2023 |
| Crosstalk induced shoot-through in bti-stressed symmetrical & asymmetrical double-trench sic power mosfets J Yang, S Jahdi, B Stark, O Alatise, J Ortiz-Gonzalez, R Wu, P Mellor IEEE Open Journal of the Industrial Electronics Society 3, 188-202, 2022 | 19 | 2022 |
| Analysis of the 1st and 3rd quadrant transients of symmetrical and asymmetrical double-trench SiC power MOSFETs J Yang, S Jahdi, B Stark, O Alatise, J Ortiz-Gonzalez, P Mellor IEEE Open Journal of Power Electronics 2, 265-276, 2021 | 16 | 2021 |
| Impact of carriers injection level on transients of discrete and paralleled silicon and 4h-sic npn bjts C Shen, S Jahdi, J Yang, O Alatise, J Ortiz-Gonzalez, R Wu, P Mellor IEEE Open Journal of the Industrial Electronics Society 3, 65-80, 2022 | 11 | 2022 |
| Impact of temperature and switching rate on properties of crosstalk on symmetrical & asymmetrical double-trench SiC power MOSFET J Yang, S Jahdi, B Stark, R Wu, O Alatise, JO Gonzalez IECON 2021–47th Annual Conference of the IEEE Industrial Electronics Society …, 2021 | 11 | 2021 |
| Investigation of performance of double-trench SiC power MOSFETs in forward and reverse quadrant operation J Yang, S Jahdi, B Stark, P Mellor, O Alatise, J Ortiz-Gonzalez PCIM Europe digital days 2021; International Exhibition and Conference for …, 2021 | 10 | 2021 |
| Electrothermal power cycling to failure of discrete planar, symmetrical double-trench and asymmetrical trench SiC MOSFETs J Yang, S Jahdi, R Yu, B Stark IEEE Open Journal of Power Electronics 4, 887-899, 2023 | 7 | 2023 |
| Investigation of repetitive short circuit stress as a degradation metric in symmetrical and asymmetrical double-trench SiC power MOSFETs R Yu, S Jahdi, P Mellor, J Yang, C Shen, L Liu, O Alatise, J Ortiz-Gonzalez 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 7 | 2022 |
| Threshold voltage drift and on-resistance of SiC symmetrical and asymmetrical double-trench MOSFETs under gate bias stress J Yang, S Jahdi, B Stark, P Mellor, R Wu, J Ortiz-Gonzalez, O Alatise PCIM Europe 2022; International Exhibition and Conference for Power …, 2022 | 6 | 2022 |
| Impact of temperature and switching rate on forward and reverse conduction of gan and sic cascode devices: A technology evaluation Y Gunaydin, S Jahdi, O Alatise, JO Gonzalez, M Hedayati, B Stark, J Yang, ... IET Conference Proceedings CP766 2020 (7), 782-787, 2020 | 6 | 2020 |
| Degradation Pattern of Parallel Symmetrical and Asymmetrical Double-Trench SiC MOSFETs under Repetitive Short Circuits R Yu, S Jahdi PCIM Europe 2023: International Exhibition and Conference for Power …, 2023 | 3 | 2023 |
| Electrothermal ruggedness of high voltage sic merged-pin-schottky diodes under inductive avalanche & surge current stress C Shen, S Jahdi, J Yang, O Alatise, J Ortiz-Gonzalez, P Mellor 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2022 | 3 | 2022 |
| Investigation of the static performance and avalanche reliability of high voltage 4h-sic merged-pin-schottky diodes C Shen, S Jahdi, P Mellor, J Yang, E Bashar, J Ortiz-Gonzalez, O Alatise 2022 24th European Conference on Power Electronics and Applications (EPE'22 …, 2022 | 3 | 2022 |
| Analysis of on-state static and dynamic transients of high voltage 4H-SIC Merged-PiN-Schottky diode C Shen, S Jahdi, P Mellor, J Yang, E Bashar, O Alatise, J Ortiz-Gonzalez IET Conference Proceedings CP799 2022 (4), 314-320, 2022 | 2 | 2022 |
| Positive and negative bias temperature instability on crosstalk-stressed symmetrical & asymmetrical double-trench sic mosfets J Yang, S Jahdi, B Stark, C Shen, O Alatise, J Ortiz-Gonzalez, P Mellor 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2022 | 1 | 2022 |
| Impact of electrothermal bias temperature instability stress on threshold voltage drift of gan cascode power modules Y Gunaydin, S Jahdi, X Yuan, J Yang, R Yu, B Stark 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 1 | 2022 |
| Investigation on threshold voltage instability under sweeping and DC gate bias stressing of SiC symmetrical and asymmetrical double-trench MOSFETs J Yang, S Jahdi, B Stark, J Ortiz-Gonzalez, R Wu, O Alatise, P Mellor IET Conference Proceedings CP799 2022 (4), 301-307, 2022 | 1 | 2022 |
| The impact of electrothermal stress on threshold voltage drift of gan and SIC cascode devices Y Gunaydin, S Jahdi, X Yuan, J Yang, B Stark, J Ortiz-Gonzalez, R Wu, ... 11th International Conference on Power Electronics, Machines and Drives …, 2022 | 1 | 2022 |
| Reliability analysis of planar and symmetrical & asymmetrical trench discrete SiC Power MOSFETs J Yang The University of Bristol, 2023 | | 2023 |
| Evaluation of the Impact of Switching Speed on Inductors in SiC Converters B Cui, J Wang, J Yang, X Yuan International Exhibition and Conference for Power Electronics, Intelligent …, 2023 | | 2023 |
Saeed JahdiUniversity of BristolVerified email at bristol.ac.uk
