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Renze Yu
Renze Yu
Verified email at bristol.ac.uk
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Year
Assist gate driver circuit on crosstalk suppression for SiC MOSFET bridge configuration
H Li, Y Zhong, R Yu, R Yao, H Long, X Wang, Z Huang
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019
522019
Thermal contact resistance optimization of press-pack IGBT device based on liquid metal thermal interface material
X Wang, H Li, R Yao, W Lai, R Liu, R Yu, X Chen, J Li
IEEE Transactions on Power Electronics 37 (5), 5411-5421, 2021
402021
Degradation analysis of planar, symmetrical and asymmetrical trench SiC MOSFETs under repetitive short circuit impulses
R Yu, S Jahdi, P Mellor, L Liu, J Yang, C Shen, O Alatise, J Ortiz-Gonzalez
IEEE Transactions on Power Electronics 38 (9), 10933-10946, 2023
312023
A study on the failure evolution to short circuit of nanosilver sintered press-pack IGBT
H Li, H Long, R Yao, X Wang, Y Zhong, R Yu, J Li
IEEE Transactions on Components, Packaging and Manufacturing Technology 10 …, 2019
222019
Measurements and review of failure mechanisms and reliability constraints of 4H-SiC power MOSFETs under short circuit events
R Yu, S Jahdi, O Alatise, J Ortiz-Gonzalez, SP Munagala, N Simpson, ...
IEEE Transactions on Device and Materials Reliability 23 (4), 544-563, 2023
202023
Optimization on thermomechanical behavior for improving the reliability of press pack IGBT using response surface method
H Li, R Yu, R Yao, X Wang, J Li, R Liu, Y Yu, X Chen
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (5 …, 2021
202021
Design of 400 V miniature DC solid state circuit breaker with SiC MOSFET
H Li, R Yu, Y Zhong, R Yao, X Liao, X Chen
Micromachines 10 (5), 314, 2019
142019
Study on the method to analyze the electrical contact resistances of press-pack IGBT devices
X Wang, H Li, R Yao, H Long, Y Zhong, R Yu, J Li
2019 IEEE 21st Electronics Packaging Technology Conference (EPTC), 613-617, 2019
102019
Impact of intrinsic parameter dispersion on short-circuit reliability of parallel-connected planar and trench SiC MOSFETs
R Yu, S Jahdi, P Mellor
IEEE Transactions on Industrial Electronics 71 (12), 15599-15609, 2024
72024
Electrothermal power cycling to failure of discrete planar, symmetrical double-trench and asymmetrical trench SiC MOSFETs
J Yang, S Jahdi, R Yu, B Stark
IEEE Open Journal of Power Electronics 4, 887-899, 2023
72023
Investigation of repetitive short circuit stress as a degradation metric in symmetrical and asymmetrical double-trench SiC power MOSFETs
R Yu, S Jahdi, P Mellor, J Yang, C Shen, L Liu, O Alatise, J Ortiz-Gonzalez
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022
72022
Performance instability of 650 v p-gan gate hemt device under temperature-related positive gate bias stresses
R Yu, S Jahdi, P Mellor, JO Gonzales, O Alatise
PCIM Europe 2024; International Exhibition and Conference for Power …, 2024
62024
FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes
C Shen, R Yu, S Jahdi, P Mellor, SP Munagala, A Hopkins, N Simpson, ...
Microelectronics Reliability 138, 114686, 2022
62022
Analysis on the reliability effect of solder voids on the nanosilver sintered press-pack IGBT
L Renkuan, L Hul, L Haiyang, L Wei, W Xiao, Y Ran, Y Renze, Y Yue
2020 4th International Conference on HVDC (HVDC), 20-25, 2020
52020
Impact of Layout Parameter Mismatches on Short Circuit Reliability of Parallel-Connected Planar, Trench and Double-Trench SiC MOSFETs
R Yu, S Jahdi, K Floros, I Lüdtke, P Mellor
IEEE Transactions on Device and Materials Reliability, 2024
42024
Performance instability of 650 V p-GaN gate HEMTs under temperature-induced negative gate bias stresses
R Yu, S Jahdi, P Mellor
2024 IEEE 10th International Power Electronics and Motion Control Conference …, 2024
42024
Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures
Y Gunaydin, S Jahdi, X Yuan, R Yu, C Shen, SP Munagala, A Hopkins, ...
Microelectronics Reliability 138, 114711, 2022
42022
Degradation Pattern of Parallel Symmetrical and Asymmetrical Double-Trench SiC MOSFETs under Repetitive Short Circuits
R Yu, S Jahdi
PCIM Europe 2023: International Exhibition and Conference for Power …, 2023
32023
Experimental analysis of short circuit robustness of gan and sic cascode devices
Y Gunaydin, S Jahdi
PCIM Europe 2023: International Exhibition and Conference for Power …, 2023
32023
Improved Temperature Estimation Model of 4H-SiC MOSFET under Avalanche Condition
R Yu, H Li, Y Zhong, W Lai, X Wang, R Yao, R Liu, Y Yu
2020 4th International Conference on HVDC (HVDC), 874-879, 2020
22020
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