| Novel high gain DC–DC converter based on coupled inductor and diode capacitor techniques with leakage inductance effects M Hoseinzadeh Lish, R Ebrahimi, H Madadi Kojabadi, JM Guerrero, ... IET Power Electronics 13 (11), 2380-2389, 2020 | 23 | 2020 |
| A cascade high gain DC-DC converter employing coupled inductor and diode capacitor M Hoseinzadeh, R Ebrahimi, HM Kojabadi 2019 5th Conference on Knowledge Based Engineering and Innovation (KBEI …, 2019 | 13 | 2019 |
| A Single Switch High Step‐Up DC‐DC Converter Based on Tri‐Winding Coupled Inductor for Renewable Energy Applications M Hosseinzadehlish, SM Hashemzadeh, S Pourjafar, E Babaei International Transactions on Electrical Energy Systems 2022 (1), 4175292, 2022 | 11 | 2022 |
| Impact of temperature and base bias stress on the static characteristics of silicon and 4h-sic npn vertical power bjts M Hosseinzadehlish, S Jahdi, C Shen, X Yuan, I Laird, O Alatise, ... PCIM Europe 2023: International Exhibition and Conference for Power …, 2023 | 8 | 2023 |
| Analysis of 1st & 3rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS M Hosseinzadehlish, S Jahdi, X Yuan, C Shen, Y Gunaydin, I Laird, ... 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 6 | 2022 |
| High-energy dynamic avalanche to failure by incremental source-voltage increase in symmetric double-trench & asymmetric trench SiC MOSFETs M Hosseinzadehlish, S Jahdi, X Yuan, J Ortiz-Gonzalez, O Alatise IEEE Open Journal of Industry Applications 5, 235-252, 2024 | 5 | 2024 |
| Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures Y Gunaydin, S Jahdi, X Yuan, R Yu, C Shen, SP Munagala, A Hopkins, ... Microelectronics Reliability 138, 114711, 2022 | 4 | 2022 |
| Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels M Hosseinzadehlish, S Jahdi, K Floros, I Ludtke, X Yuan IEEE Open Journal of Power Electronics, 2025 | 1 | 2025 |
| TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT M Hosseinzadehlish, S Jahdi, X Yuan, K Floros 2024 IEEE Energy Conversion Congress and Exposition (ECCE), 6856-6858, 2024 | 1 | 2024 |
| Impact of Temperature on Dynamics and Reliability of High-Voltage Silicon & 4H-SiC Bipolar Junction Transistors M Hosseinzadehlish, S Jahdi, X Yuan, R Yu, J Ortiz-Gonzalez, O Alatise 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2024 | 1 | 2024 |
| Steady-State Analysis of Standalone Vertical Silicon & SiC NPN BJTs C Shen, S Jahdi, M Hosseinzadehlish, P Mellor, K Floros, I Ludtke 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2024 | 1 | 2024 |
| Dynamic Transients and Reliability of High-Voltage Silicon & 4H-SiC Bipolar Junction Transistors Under Avalanche and Short-Circuits M Hosseinzadehlish, S Jahdi, X Yuan, J Ortiz-Gonzalez, O Alatise PCIM Europe 2024; International Exhibition and Conference for Power …, 2024 | 1 | 2024 |
| Analysis of Avalanche UIS Ruggedness of Vertical Power Silicon & SiC NPN BJTs M Hosseinzadehlish, S Jahdi, X Yuan, M Kuball IEEE Open Journal of Power Electronics, 2025 | | 2025 |
| Prospects and Challenges for SiC Power Devices in MMC-VSC-HVDC Applications O Alatise, S Jahdi, PM Gammon, J Ortiz-Gonzalez, M Hosseinzadehlish, ... Key Engineering Materials 1024, 39-47, 2025 | | 2025 |
| The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation Y Liu, S Jahdi, M Hosseinzadehlish, I Laird, P Mellor, K Floros, I Lüdtke Key Engineering Materials 1022, 29-36, 2025 | | 2025 |
| Prospects and Challenges for SiC Power Devices in MMC-VSC-HVDC Applications J Ortiz-Gonzalez, M Hosseinzadehlish SiC Application and SiC Devices Reliability and Stability, 39, 2025 | | 2025 |
| Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs C Shen, S Jahdi, M Hosseinzadehlish, P Mellor, K Floros, I Lüdtke Key Engineering Materials 1021, 75-83, 2025 | | 2025 |
| Analysis of Electrothermal Reliability of Unipolar and Bipolar 4H-SiC Power Transistors M Hosseinzadehlish University of Bristol, 2025 | | 2025 |
| Prospects and Challenges for SiC Power Devices in MMC-VSC Applications O Alatise, S Jahdi, PM Gammon, J Ortiz-Gonzalez, M Hosseinzadehlish, ... Scientific Books of Abstracts 8, 445-446, 2024 | | 2024 |
| The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery Y Liu, S Jahdi, M Hosseinzadehlish, I Laird, P Mellor, K Floros, I Ludtke Scientific Books of Abstracts 8, 692-693, 2024 | | 2024 |
Saeed JahdiUniversity of BristolVerified email at bristol.ac.uk
