| Enabling hybrid bonding on intel process A Elsherbini, K Jun, R Vreeland, W Brezinski, HK Niazi, Y Shi, Q Yu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 34.3. 1-34.3. 4, 2021 | 43 | 2021 |
| Intel 22nm low-power FinFET (22FFL) process technology for 5G and beyond HJ Lee, S Callender, S Rami, W Shin, Q Yu, JM Marulanda 2020 IEEE Custom Integrated Circuits Conference (CICC), 1-7, 2020 | 41 | 2020 |
| Scaled submicron field-plated enhancement mode high-K gallium nitride transistors on 300mm Si (111) wafer with power FoM (R ON xQ GG) of 3.1 mohm-nC at 40V and f T/f MAX of 130 … HW Then, M Radosavljevic, P Koirala, M Beumer, S Bader, A Zubair, ... 2022 International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2022 | 40 | 2022 |
| Enhancement-mode 300-mm GaN-on-Si (111) with integrated Si CMOS for future mm-wave RF applications HW Then, M Radosavljevic, Q Yu, A Latorre-Rey, H Vora, S Bader, ... IEEE Microwave and Wireless Technology Letters 33 (6), 835-838, 2023 | 35 | 2023 |
| Improved micromachined terahertz on-wafer probe using integrated strain sensor Q Yu, MF Bauwens, C Zhang, AW Lichtenberger, RM Weikle, NS Barker IEEE transactions on microwave theory and techniques 61 (12), 4613-4620, 2013 | 31 | 2013 |
| Implementation of high power RF devices with hybrid workfunction and OxideThickness in 22nm low-power FinFET technology HJ Lee, S Morarka, S Rami, Q Yu, M Weiss, G Liu, M Armstrong, CY Su, ... 2019 IEEE International Electron Devices Meeting (IEDM), 25.4. 1-25.4. 4, 2019 | 27 | 2019 |
| A 50-Gb/s 134-GHz 16-QAM 3-m dielectric waveguide transceiver system implemented in 22-nm FinFET CMOS TW Brown, GC Dogiamis, YS Yeh, D Correas-Serrano, TS Rane, ... IEEE Solid-State Circuits Letters 4, 206-209, 2021 | 26 | 2021 |
| Microelectronic assemblies having a hybrid bonded interposer for die-to-die fan-out scaling G Dogiamis, Q Yu, AA Elsherbini, SM Liff US Patent 12,341,114, 2025 | 17 | 2025 |
| mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process Q Yu, S Rami, J Waldemer, Y Ma, V Neeli, J Garrett, G Liu, J Koo, ... 2020 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2020 | 17 | 2020 |
| An F-band power amplifier with skip-layer via achieving 23.8% PAE in FinFET technology Q Yu, J Garrett, S Hwangbo, G Dogiamis, S Rami 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 179-182, 2022 | 14 | 2022 |
| 5G mmWave power amplifier and low-noise amplifier in 300mm GaN-on-Si technology Q Yu, HW Then, D Thomson, J Chou, J Garrett, I Huang, I Momson, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 14 | 2022 |
| An improved ring-centered waveguide flange for millimeter-and submillimeter-wave applications H Li, AR Kerr, JL Hesler, G Wu, Q Yu, NS Barker, RM Weikle 2010 76th ARFTG Microwave Measurement Conference, 1-4, 2010 | 12 | 2010 |
| A 50 Gbps 134 GHz 16 QAM 3 m dielectric waveguide transceiver system implemented in 22nm CMOS TW Brown, GC Dogiamis, YS Yeh, D Correas-Serrano, TS Rane, ... 2021 Symposium on VLSI Circuits, 1-2, 2021 | 11 | 2021 |
| An E-band power amplifier using high power RF device with hybrid work function and oxide thickness in 22nm low-power FinFET Q Yu, YS Yeh, J Garret, J Koo, S Morarka, S Rami, G Liu, HJ Lee 2020 IEEE/MTT-S International Microwave Symposium (IMS), 999-1002, 2020 | 11 | 2020 |
| Advancements in 300 mm GaN-on-Si technology with industry’s first circuit demonstration of monolithically integrated GaN and Si transistors Q Yu, AA Farid, I Momson, J Garrett, H Vora, S Bader, A Zubair, P Koirala, ... IEEE Microwave and Wireless Technology Letters 34 (6), 745-748, 2024 | 10 | 2024 |
| A fully integrated 3.2-4.7 GHz Doherty power amplifier in 300mm GaN-on-Si technology Q Yu, D Thomson, HW Then, A Latorre-Rey, M Radosavljevic, M Beumer, ... 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022 | 9 | 2022 |
| Modeling and characterization of through-silicon-vias (TSVs) in radio frequency regime in an active interposer technology A Rahimi, P Somarajan, Q Yu 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 1383-1389, 2020 | 9 | 2020 |
| Field-effect transistors with asymmetric gate stacks S Rami, HJ Lee, S MORARKA, G Liu, Q Yu, B Sell, M Armstrong US Patent 11,515,424, 2022 | 7 | 2022 |
| A 330–500GHz micro-machined directional coupler JT Do, Q Yu, JL Hesler, NS Barker 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-3, 2013 | 7 | 2013 |
| Integrated strain sensor for micromachined terahertz on-wafer probe Q Yu, M Bauwens, C Zhang, AW Lichtenberger, RM Weikle, NS Barker 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013 | 7 | 2013 |
Adel ElsherbiniIntel CorporationVerified email at intel.com
