| Scaled submicron field-plated enhancement mode high-K gallium nitride transistors on 300mm Si (111) wafer with power FoM (R ON xQ GG) of 3.1 mohm-nC at 40V and f T/f MAX of 130 … HW Then, M Radosavljevic, P Koirala, M Beumer, S Bader, A Zubair, ... 2022 International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2022 | 40 | 2022 |
| A π-Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs AD Latorre-Rey, JD Albrecht, M Saraniti IEEE Transactions on Electron Devices 65 (10), 1-8, 2018 | 37* | 2018 |
| Enhancement-mode 300-mm GaN-on-Si (111) with integrated Si CMOS for future mm-wave RF applications HW Then, M Radosavljevic, Q Yu, A Latorre-Rey, H Vora, S Bader, ... IEEE Microwave and Wireless Technology Letters 33 (6), 835-838, 2023 | 35 | 2023 |
| Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors AD Latorre-Rey, FFM Sabatti, JD Albrecht, M Saraniti Applied Physics Letters 111 (1), 013506, 2017 | 27 | 2017 |
| Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction A Ortiz-Conde, FJ García-Sánchez, J Muci, DCL Muñoz, AD Latorre-Rey, ... Microelectronics Reliability 49 (7), 689-692, 2009 | 25 | 2009 |
| DrGaN: An integrated CMOS driver-GaN power switch technology on 300mm GaN-on-Si with E-mode GaN MOSHEMT and 3D monolithic Si PMOS HW Then, M Radosavljevic, S Bader, A Zubair, H Vora, N Nair, P Koirala, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 23 | 2023 |
| Assessment of Self-Heating Effects Under Lateral Scaling of GaN HEMTs AD Latorre-Rey, K Merrill, JD Albrecht, M Saraniti IEEE Transactions on Electron Devices, 2019 | 21 | 2019 |
| 5G mmWave power amplifier and low-noise amplifier in 300mm GaN-on-Si technology Q Yu, HW Then, D Thomson, J Chou, J Garrett, I Huang, I Momson, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 14 | 2022 |
| Physics-Based Breakdown Voltage Optimization of Trench MOS Barrier Schottky Rectifiers AD Latorre-Rey, M Mudholkar, MT Quddus Transactions on Electron Devices 65 (3), 1-7, 2018 | 14 | 2018 |
| Extraction of mobility degradation and source-and-drain resistance in MOSFETs J Muci, AD Latorre-Rey, FJ García-Sánchez, DCL Muñoz, A Ortiz-Conde, ... Journal Integrated Circuits and Systems 5 (2), 103-109, 2010 | 12 | 2010 |
| Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure A Ortiz-Conde, AD Latorre-Rey, W Liu, WC Chen, HC Lin, JJ Liou, J Muci, ... Solid-State Electronics 54 (6), 635-641, 2010 | 10 | 2010 |
| A fully integrated 3.2-4.7 GHz Doherty power amplifier in 300mm GaN-on-Si technology Q Yu, D Thomson, HW Then, A Latorre-Rey, M Radosavljevic, M Beumer, ... 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022 | 9 | 2022 |
| A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs J Muci, DCL Munoz, AD Latorre-Rey, A Ortiz-Conde, FJ García-Sánchez, ... Semiconductor Science and Technology 24 (10), 105015, 2009 | 9 | 2009 |
| Generation of Hot Electrons in GaN HEMTs under RF Class A and AB PAs AD Latorre-Rey, JD Albrecht, M Saraniti 2017 75th Device Research Conference (DRC), 2017 | 8 | 2017 |
| Extraction of MOSFET model parameters from the measured source-to-drain resistance FJ Garcia-Sanchez, J Muci, DCL Muñoz, AD Latorre-Rey, A Ortiz-Conde, ... ECS Transactions 23 (1), 353-360, 2009 | 8 | 2009 |
| IEEE Microwave and Wireless Tech HW Then, M Radosavljevic, Q Yu, A Latorre-Rey, H Vora, S Bader, ... Lett 33 (6), 835-838, 2023 | 6 | 2023 |
| Electro-thermal characterization of GaN HEMT on Si through selfconsistent energy balance-cellular Monte Carlo device simulations AD Latorre-Rey, K Merrill, JD Albrecht, M Saraniti 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2017 | 6 | 2017 |
| A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs FJ García-Sánchez, AD Latorre-Rey, W Liu, WC Chen, HC Lin, JJ Liou, ... Solid-State Electronics 63 (1), 22-26, 2011 | 6 | 2011 |
| A Charge-Based Model of Junction Barrier Schottky Rectifiers AD Latorre-Rey, M Mudholkar, MT Quddus, A Salih Solid State Electronics, 2018 | 2 | 2018 |
| Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing MT Quddus, AD Latorre-Rey, Z Ramezani, M Mudholkar Micromachines 16 (1), 90, 2025 | 1 | 2025 |
John AlbrechtMichigan State UniversityVerified email at egr.msu.edu
