| Single‐domain magnetic pillar array of 35 nm diameter and 65 Gbits/in. 2 density for ultrahigh density quantum magnetic storage SY Chou, MS Wei, PR Krauss, PB Fischer Journal of Applied Physics 76 (10), 6673-6675, 1994 | 479 | 1994 |
| 3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact … HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ... 2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019 | 249 | 2019 |
| 300mm heterogeneous 3D integration of record performance layer transfer germanium PMOS with silicon NMOS for low power high performance logic applications W Rachmady, A Agrawal, SH Sung, G Dewey, S Chouksey, B Chu-Kung, ... 2019 IEEE International Electron Devices Meeting (IEDM), 29.7. 1-29.7. 4, 2019 | 237 | 2019 |
| Circulating T cell subpopulations correlate with immune responses at the tumor site and clinical response to PD1 inhibition in non-small cell lung cancer N Manjarrez-Orduño, LC Menard, S Kansal, P Fischer, B Kakrecha, ... Frontiers in immunology 9, 1613, 2018 | 144 | 2018 |
| Study of nanoscale magnetic structures fabricated using electron‐beam lithography and quantum magnetic disk SY Chou, M Wei, PR Krauss, PB Fischer Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 139 | 1994 |
| 10 nm electron beam lithography and sub‐50 nm overlay using a modified scanning electron microscope PB Fischer, SY Chou Applied physics letters 62 (23), 2989-2991, 1993 | 137 | 1993 |
| Process integration and future outlook of 2D transistors KP O’Brien, CH Naylor, C Dorow, K Maxey, AV Penumatcha, A Vyatskikh, ... nature communications 14 (1), 6400, 2023 | 125 | 2023 |
| Integrated circuit structures B Block, VR Rao, P Morrow, R Mehandru, D Ingerly, K Jun, K O'brien, ... US Patent 10,872,820, 2020 | 83 | 2020 |
| Method and apparatus for endpoint detection in a chemical/mechanical process for polishing a substrate LD Yau, PB Fischer US Patent 5,595,526, 1997 | 82 | 1997 |
| Tera‐hertz GaAs metal‐semiconductor‐metal photodetectors with 25 nm finger spacing and finger width SY Chou, Y Liu, PB Fischer Applied physics letters 61 (4), 477-479, 1992 | 79 | 1992 |
| Gallium nitride and silicon transistors on 300 mm silicon wafers enabled by 3-D monolithic heterogeneous integration HW Then, M Radosavljevic, K Jun, P Koirala, B Krist, T Talukdar, ... IEEE Transactions on Electron Devices 67 (12), 5306-5314, 2020 | 76 | 2020 |
| Fabrication of single‐domain magnetic pillar array of 35 nm diameter and 65 Gbits/in.2 density PR Krauss, PB Fischer, SY Chou Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 75 | 1994 |
| Sub‐50 nm high aspect‐ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etching PB Fischer, SY Chou Applied physics letters 62 (12), 1414-1416, 1993 | 74 | 1993 |
| Ultrahigh resolution magnetic force microscope tip fabricated using electron beam lithography PB Fischer, MS Wei, SY Chou Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 71 | 1993 |
| 10 nm Si pillars fabricated using electron‐beam lithography, reactive ion etching, and HF etching PB Fischer, K Dai, E Chen, SY Chou Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 70 | 1993 |
| Enabling Next Generation 3D Heterogeneous Integration Architectures on Intel Process A Elsherbini, K Jun, S Liff, T Talukdar, J Bielefeld, W Li, R Vreeland, ... 2022 International Electron Devices Meeting (IEDM), 27.3. 1-27.3. 4, 2022 | 68 | 2022 |
| Advanced scaling of enhancement mode high-K gallium nitride-on-300mm-Si (111) transistor and 3D layer transfer GaN-silicon finfet CMOS integration HW Then, M Radosavljevic, P Koirala, N Thomas, N Nair, I Ban, ... 2021 IEEE International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2021 | 63 | 2021 |
| Renal cell carcinoma (RCC) tumors display large expansion of double positive (DP) CD4+ CD8+ T cells with expression of exhaustion markers LC Menard, P Fischer, B Kakrecha, PS Linsley, E Wambre, MC Liu, ... Frontiers in immunology 9, 2728, 2018 | 57 | 2018 |
| GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020 | 53 | 2020 |
| A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 /spl mu/m2 6-T SRAM cell K Kuhn, M Agostinelli, S Ahmed, S Chambers, S Cea, S Christensen, ... Digest. International Electron Devices Meeting,, 73-76, 2002 | 49 | 2002 |
