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WO2019026717A1 - Dispositif à semi-conducteur, appareil électronique et procédé de fabrication - Google Patents

Dispositif à semi-conducteur, appareil électronique et procédé de fabrication Download PDF

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Publication number
WO2019026717A1
WO2019026717A1 PCT/JP2018/027843 JP2018027843W WO2019026717A1 WO 2019026717 A1 WO2019026717 A1 WO 2019026717A1 JP 2018027843 W JP2018027843 W JP 2018027843W WO 2019026717 A1 WO2019026717 A1 WO 2019026717A1
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WIPO (PCT)
Prior art keywords
semiconductor device
semiconductor chip
component
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/027843
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English (en)
Japanese (ja)
Inventor
剣人 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of WO2019026717A1 publication Critical patent/WO2019026717A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof

Definitions

  • the present technology relates to a semiconductor device, an electronic device, and a manufacturing method, and, for example, to a semiconductor device, an electronic device, and a manufacturing method which can be miniaturized.
  • Patent Document 1 proposes to realize miniaturization by sealing a lens holder, a chip, and a substrate.
  • the present technology has been made in view of such a situation, and makes it possible to realize further miniaturization of a semiconductor device.
  • a semiconductor device includes a translucent substrate, a semiconductor chip, and a component that exchanges signals with the semiconductor chip, and the semiconductor chip and the component include the translucent substrate. Are arranged on the same plane.
  • An electronic device includes a translucent substrate, a semiconductor chip including an imaging device, a component that transmits and receives a signal to and from the semiconductor chip, and a lens for condensing light on the imaging device And the semiconductor chip and the component are disposed on the same surface of the translucent base.
  • an adhesive is applied to a translucent substrate, and the semiconductor chip and a component for exchanging signals with the semiconductor chip are applied to the translucent substrate with the adhesive.
  • a semiconductor device is manufactured by fixing.
  • a semiconductor device includes a translucent substrate, a semiconductor chip, and a component for exchanging signals with the semiconductor chip, and the semiconductor chip and the component are the same as the translucent substrate. It is arranged on the surface.
  • An electronic device is a device including the semiconductor device.
  • the semiconductor device is manufactured.
  • the semiconductor device may be an independent device or an internal block constituting one device.
  • FIG. 1 is a diagram showing the configuration of an embodiment of a semiconductor device to which the present technology is applied.
  • FIG. 7 is a diagram for illustrating the manufacture of the semiconductor device in the first embodiment. It is a figure showing composition of a semiconductor device in a 2nd embodiment. It is a figure for demonstrating manufacture of the semiconductor device in 2nd Embodiment. It is a figure which shows the structure of the semiconductor device in 3rd Embodiment. It is a figure for demonstrating manufacture of the semiconductor device in 3rd Embodiment. It is a figure showing composition of a semiconductor device in a 4th embodiment. It is a figure for demonstrating manufacture of the semiconductor device in 4th Embodiment. It is a figure which shows the structure of the semiconductor device in 5th Embodiment.
  • FIG. 1 is a cross-sectional view of a semiconductor device 10a according to a first embodiment of the present invention.
  • the semiconductor device 10 a includes a semiconductor chip 32, a support base 27 connected to the semiconductor chip 32 via an adhesive layer 28, a through electrode 26 formed on the semiconductor chip 32, and a through electrode 26.
  • the conductive layer 19 is drawn to the back surface of the semiconductor chip 32 to connect to the external terminal 31, and the protective layer 20 for sealing the semiconductor chip 32.
  • the semiconductor chip 32 has, for example, an active element such as a transistor (not shown), a protective film, and the like formed on a semiconductor substrate 11 made of silicon or the like. Further, a wiring layer 12 is formed on the semiconductor substrate 11 by laminating a conductive layer such as a wiring (not shown) or the pad electrode 13 and an insulating layer such as an interlayer insulating film covering the conductive layer.
  • an active element such as a transistor (not shown), a protective film, and the like formed on a semiconductor substrate 11 made of silicon or the like.
  • a wiring layer 12 is formed on the semiconductor substrate 11 by laminating a conductive layer such as a wiring (not shown) or the pad electrode 13 and an insulating layer such as an interlayer insulating film covering the conductive layer.
  • the semiconductor chip 32 includes, for example, a light receiving and / or light emitting element (not shown), a sensor surface for light receiving and / or light emitting, etc.
  • the color filter 30 and the microlens 29 are formed on the layer 12.
  • the semiconductor chip 32 is, for example, a complementary metal oxide semiconductor (CMOS) image sensor, a charge coupled device (CCD) image sensor, or the like.
  • CMOS complementary metal oxide semiconductor
  • CCD charge coupled device
  • the support substrate 27 is made of, for example, a light transmissive substrate such as glass.
  • the support base 27 can also be configured to be an IRCF (InfraRed Cut Filter).
  • the support base 27 is connected to the surface (main surface) of the semiconductor chip 32 on which the active element is formed, via an adhesive layer 28 made of resin or the like.
  • a hollow structure is formed between the support base 27 and the main surface side of the semiconductor chip, but as will be described later with reference to FIG. 3, for example, a structure sealed with a light transmitting resin or the like. It may be
  • a through electrode 26 which penetrates the semiconductor substrate 11 and is connected to the pad electrode 13 is formed.
  • the through electrode 26 has a via hole in which the pad electrode 13 is opened from the surface (rear surface) side opposite to the surface on which the active element of the semiconductor chip 32 is formed with respect to the pad electrode 13 formed in the wiring layer 12. It is formed by covering the inside of the via hole with the conductive layer 19.
  • the conductive layer 19 is formed on the back surface of the semiconductor chip 32 through the pad electrode 13 and the inner side surface of the through electrode 26, and is connected to the external terminal 31 on the back surface side of the semiconductor chip 32. Further, in order to prevent energization due to the contact between the conductive layer 19 and the semiconductor substrate 11, the insulating layer 17 is formed so as to cover the back surface of the semiconductor substrate 11 and the inner side surface of the through electrode 26.
  • the protective layer 20 is formed on the entire back surface side of the semiconductor chip 32 except for the connection portion between the conductive layer 19 and the external terminal 31.
  • the protective layer 20 is formed of, for example, an insulating resin such as a polyimide resin or a solder resist.
  • the component 41 is disposed on the side of the semiconductor chip 32.
  • the component 41 is a passive component such as a resistor or a capacitor, an IC (Integrated Circuit) such as a driver for autofocus or a driver for camera shake correction, or a bare chip (bare die) not sealed in an IC package. , KGD (Known Good Die) which is guaranteed to be good.
  • the component 41 is a component that exchanges signals with the semiconductor chip 32 (processes a signal from the semiconductor chip 32 or supplies a control signal for controlling the semiconductor chip 32).
  • the semiconductor chip 32 and the component 41 are connected via the conductive layer 19.
  • a translucent substrate 101 is prepared.
  • the translucent base 101 is a portion to be the support base 27 when it is singulated.
  • the light-transmissive substrate 101 has the same behavior of linear expansion with temperature as possible as Si (semiconductor substrate 11 (semiconductor wafer 103 (step S13) to be semiconductor substrate 11) formed of silicon single crystal)). Should exhibit the behavior of For example, the translucent substrate 101 (support substrate 27) is formed of glass such as quartz glass or borosilicate glass.
  • the light transmitting substrate 101 prepared in step S11 When the light transmitting substrate 101 prepared in step S11 is bonded to the semiconductor wafer 103 at the wafer level, the light transmitting substrate 101 and the semiconductor wafer 103 have substantially the same shape.
  • the light-transmissive substrate 101 is formed in a rectangular shape or the like, and is disposed in a portion where the pixel region of the semiconductor wafer 103 is formed (in a state where the light-transmissive substrate 101 is divided in advance, It may be bonded to the semiconductor wafer 103).
  • step S12 the adhesive 102 is applied to a region (hereinafter referred to as an adhesive region as appropriate) including the position (region) where the component 41 of the translucent substrate 101 (support substrate 27) is disposed.
  • An adhesive layer 28 (portion to be the adhesive layer 28) is formed.
  • the adhesive layer 28 may be formed by applying the adhesive 102 only to the adhesive area of the light-transmissive substrate 101.
  • the adhesive 102 is applied to the entire surface of the translucent substrate 101, and then the adhesive 102 applied to the area other than the area to be the adhesion area is removed, resulting in the translucent substrate
  • the adhesive layer 28 may be formed by leaving the adhesive 102 only in the adhesive area including the area where the component 41 of 101 (support base 27) is disposed.
  • the adhesive 102 a liquid adhesive can be used.
  • the component 102 and the support substrate 27 may be adhered (fixed) by using the adhesive 102 as a transparent resin and curing the transparent resin.
  • a transparent adhesive is used as the adhesive 102
  • a silicone resin an acrylic resin, an epoxy resin, a dendrimer, or a copolymer thereof.
  • heat resistance / chemical resistance / light resistance even in the process of curing (for example, by heat or UV irradiation) or in the reliability test, and it is possible not to affect the imaging characteristics.
  • step S13 bonding of the light transmitting substrate 101 and the semiconductor wafer 103 and arrangement of the components 41 are performed.
  • a plurality of pixel areas and the like are formed on a substrate formed of silicon single crystal, and a semiconductor wafer 103 provided with a plurality of pixel areas is prepared.
  • the pixel region and the like are formed by the semiconductor element manufacturing process.
  • the semiconductor chip 32 is, for example, a CMOS image sensor, a CCD image sensor, or the like, and the pixel region is a region having a plurality of conversion elements, a plurality of transistors, and the like that convert incident light into charge.
  • the semiconductor wafer 103 in which a plurality of such pixel regions are formed by the semiconductor element manufacturing process is prepared in step S13, and is bonded to the light transmitting substrate 101.
  • the adhesive 102 is applied to the translucent substrate 101 in step S12, and the translucent substrate 101 and the semiconductor wafer 103 are bonded (fixed) by the adhesive 102.
  • the adhesive 102 is also applied to the area where the component 41 of the translucent substrate 101 is disposed, and the component 41 is fixed to the translucent substrate 101 by the adhesive 102.
  • variations in height of the component 41, variations in height of the semiconductor chip 32 and the component 41, and the like can be absorbed, and the component 41 and the semiconductor chip 32 can be arranged side by side flush.
  • the semiconductor chip 32 (the semiconductor wafer 103 including the semiconductor chip 32) may be planarized by polishing after being bonded to the light-transmissive substrate 101.
  • step S14 rewiring is formed.
  • the rewiring is a portion constituting the conductive layer 19.
  • the conductive layer 19 is formed of, for example, copper (Cu) or the like.
  • the patterning of the resist is performed on the back surface of the semiconductor wafer 103 (the side different from the side on which the light transmitting substrate 101 is disposed). Then, the conductive layer 19 is formed by removing an extra conductor which is etched using the resist as a mask.
  • the protective layer 20 is formed.
  • the protective layer 20 is formed of, for example, an insulating resin such as a polyimide resin or a solder resist.
  • a photosensitive resin for the protective layer 20 By using a photosensitive resin for the protective layer 20, patterning for forming the external terminals 31 and the like in step S16 can be easily formed by photolithography.
  • step S16 the external terminals 31 are formed by soldering or the like.
  • the integrated light transmitting substrate 101 and the semiconductor wafer 103 are cut and separated into pieces.
  • blade dicing or laser dicing can be applied.
  • Laser dicing is a preferable method because the processability of a thinned semiconductor wafer can be excellent, the width of cutting can be reduced, and the generation of burrs and the like on a cut surface can be suppressed.
  • the semiconductor device 10a as shown in FIG. 1 is completed.
  • the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27.
  • the variation in height between the semiconductor chip 32 and the component 41 and the variation in height between the components 41 can be absorbed by the adhesive layer 28. Therefore, as described above, the semiconductor chip 32 and the component 41 can be arranged side by side on one surface of the support base 27.
  • the semiconductor chip 32 and the component 41 are arranged on one surface of the support base 27, the overall height of the semiconductor device 10a can be reduced. That is, the semiconductor device 10a can be miniaturized.
  • the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened.
  • the semiconductor chip 32 and the component 41 can be connected at the shortest distance.
  • the semiconductor device 10a when connecting a memory to the semiconductor device 10a, by connecting the semiconductor device 10a to a memory (not shown) via the external terminal 31, power consumption can be reduced and speed can be increased. That is, by providing a large number of external terminals 31 and connecting the memory with the large number of external terminals 31, it is possible to connect to the memory with multiple electrodes, and power consumption and speeding up can be achieved.
  • FIG. 3 is a diagram showing a configuration of a semiconductor device 10b in the second embodiment.
  • the semiconductor device 10b according to the second embodiment shown in FIG. 3 has a structure in which the space between the support base 27 and the main surface side of the semiconductor chip 32 is sealed with a light transmitting resin or the like. This differs from the semiconductor device 10a in the first embodiment shown in FIG.
  • the semiconductor device 10 b is filled with a material for forming the adhesive layer 28 between the support base 27 and the main surface side of the semiconductor chip 32.
  • the material forming the adhesive layer 28 is a light transmitting resin or the like.
  • step S21 a translucent substrate 101 made of a transparent material such as glass is prepared.
  • step S22 the adhesive 202 is applied to the entire surface of the translucent substrate 101.
  • the adhesive 202 is applied to the entire surface of the light transmitting substrate 101, and the process proceeds to the next step S23, which is different from the manufacturing process of the semiconductor device 10a described with reference to FIG.
  • step S23 the semiconductor wafer 103 is bonded and the component 41 is bonded to the light-transmissive substrate 101 on the entire surface of which the adhesive 202 is applied.
  • the adhesive can be formed between the support substrate 27 and the main surface side of the semiconductor chip 32. It can be set as the structure 202 (adhesive layer 28) was filled.
  • step S24 rewiring is formed.
  • step S25 the protective layer 20 is formed.
  • step S26 the external terminal 31 is formed, and the integrated light transmitting substrate 101 and the semiconductor wafer 103 are cut and separated into pieces.
  • the semiconductor device 10b as shown in FIG. 3 is completed by such a process.
  • the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27.
  • the variation in height between the semiconductor chip 32 and the component 41 and the variation in height between the components 41 can be absorbed by the adhesive layer 28. Therefore, as described above, the semiconductor chip 32 and the component 41 can be arranged side by side on one surface of the support base 27.
  • the semiconductor chip 32 and the component 41 are arranged on one surface of the support base 27, the overall height of the semiconductor device 10b can be reduced. That is, the semiconductor device 10b can be miniaturized.
  • the component 41 by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced.
  • power consumption when connecting a memory to the semiconductor device 10b, by connecting the semiconductor device 10b to a memory (not shown) through the external terminal 31, power consumption can be reduced and speed can be increased.
  • FIG. 5 is a diagram showing the configuration of a semiconductor device 10c in the third embodiment.
  • the semiconductor device 10c according to the third embodiment shown in FIG. 5 has a structure in which the space between the support base 27 and the main surface side of the semiconductor chip 32 is sealed with a light transmitting resin or the like.
  • the semiconductor device 10b has the same configuration as the semiconductor device 10b of the second embodiment shown in FIG.
  • the supporting base 27 in order to absorb the height of the component 41, has a configuration in which a counterbore is inserted, compared with the semiconductor device 10a in the first embodiment and the second embodiment. It differs from the semiconductor device 10b in the form.
  • a counterbore 27c is formed on the support base 27 of the semiconductor device 10c.
  • the counterbore 27 c is formed by partially reducing the thickness of the support substrate 27.
  • the counterbore 27c By forming the counterbore 27c on the support base 27, even if a component 41 having a thickness (height) larger than that of the semiconductor chip 32 is disposed in the portion of the counterbore 27c, its height is absorbed by the counterbore 27c.
  • the semiconductor chip 32 and the component 41 can be arranged side by side on one surface of the support base 27.
  • the height of the semiconductor device 10c can be reduced without heightening.
  • step S31 a translucent substrate 301 made of a transparent material such as glass is prepared.
  • a portion which becomes the counterbore 27c of the support substrate 27 of the semiconductor device 10c when it is singulated is already formed.
  • step S 32 the adhesive 302 is applied to the entire surface of the translucent substrate 301.
  • the adhesive 302 is applied to the entire surface of the light-transmissive substrate 301, whereby the adhesive 302 is also filled in the portion of the counterbore 27c.
  • step S33 the semiconductor wafer 103 is adhered to the light transmitting base 301 to which the adhesive 302 is also applied to the counterbore 27c, and the component 41 is adhered.
  • the steps after step S33 are the same as the steps after step S23 shown in FIG.
  • the semiconductor device 10c as shown in FIG. 5 is completed.
  • the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, and the semiconductor chip 32 and the component 41 are high. Since the variation in height and the variation in height between components 41 are absorbed by the adhesive layer 28, the semiconductor device 10c can be miniaturized.
  • the semiconductor device 10c even when the tall component 41 is disposed by forming the counterbore 27c, the semiconductor chip 32 and the component 41 are disposed side by side on one surface of the support base 27. As a result, the overall height of the semiconductor device 10c can be reduced. That is, the semiconductor device 10c can be miniaturized.
  • the component 41 by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced.
  • the semiconductor device 10c when connecting a memory to the semiconductor device 10c, by connecting the semiconductor device 10c to a memory (not shown) through the external terminal 31, power consumption can be reduced and speed can be increased.
  • FIG. 7 is a diagram showing the configuration of a semiconductor device 10d according to the fourth embodiment.
  • the semiconductor device 10d according to the fourth embodiment shown in FIG. 7 has the same structure as the semiconductor device 10a according to the first embodiment shown in FIG. It is hollow but its size is different.
  • the space between the support base 27 and the main surface side of the semiconductor chip 32 is enlarged, in other words, between the support base 27 and the main surface side of the semiconductor chip 32.
  • the second embodiment differs from the semiconductor device 10a according to the first embodiment in that the support base 27 has a counterbore structure in order to widen (provide a gap).
  • a counterbore 27d is formed in a region opposed to (the pixel region of) the semiconductor chip 32 in the support base 27 of the semiconductor device 10d.
  • the counterbore 27 d is formed by forming a part of the thickness of the support substrate 27 thin.
  • a counterbore 27d is formed on the support base 27, and a gap is provided between the support base 27 and the main surface side of the semiconductor chip 32 by bonding the portion of the counterbore 27d so that the pixel region of the semiconductor chip 32 is located. be able to. Also, as in the first to third embodiments, the semiconductor chip 32 and the component 41 can be arranged side by side on one surface of the support base 27.
  • a translucent substrate 401 formed of a transparent material such as glass is prepared.
  • a portion to be the counterbore 27d of the support substrate 27 of the semiconductor device 10d is already formed when it is singulated.
  • step S42 the adhesive 402 is applied to the area other than the counterbore 27d of the translucent substrate 401.
  • the adhesive 402 is applied only to the area (adhesion area) including the position (area) where the component 41 of the translucent base 101 (support base 27) is disposed. State.
  • step S43 the semiconductor wafer 103 is bonded and the component 41 is bonded to the light transmitting substrate 401 having the adhesive 402 applied to portions other than the counterbore 27d. Since the process after process S43 is a process similar to the process after process S13 shown in FIG. 1, description is abbreviate
  • the semiconductor device 10d as shown in FIG. 7 is completed by such a process.
  • the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, and the semiconductor chip 32 and the component 41 are high. Since the variation in height and the variation in height between components 41 are absorbed by the adhesive layer 28, the overall height of the semiconductor device 10d can be reduced. That is, the semiconductor device 10d can be miniaturized.
  • the component 41 by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced.
  • the semiconductor device 10 d when connecting a memory to the semiconductor device 10 d, by connecting the semiconductor device 10 d to a memory (not shown) through the external terminal 31, power consumption can be reduced and speed can be increased.
  • the hollow is provided between the support base 27 and the main surface side of the semiconductor chip 32 by forming the counterbore 27 d on the support base 27.
  • a configuration as shown in FIG. 1 may be used, and the hollow is formed larger by adjusting the thickness of the adhesive layer 28. It can also be done.
  • FIG. 9 is a diagram showing a configuration of a semiconductor device 10e according to the fifth embodiment.
  • the semiconductor device 10e in the fifth embodiment shown in FIG. 9 has a configuration in which the semiconductor device 10c in the third embodiment and the semiconductor device 10d in the fourth embodiment are combined.
  • the counterbore 27c is formed at the position where the component 41 is arranged, and the counterbore 27d is arranged at the position where the semiconductor chip 32 (pixel region thereof) is arranged Is formed.
  • the height of the semiconductor device 10e is not increased even if the component 41 having a height is disposed, and the height is reduced. can do.
  • a hollow can be provided between the support base 27 and the main surface side of the semiconductor chip 32.
  • a translucent substrate 501 made of a transparent material such as glass is prepared.
  • the portions to be the counterbore 27c and the counterbore 27d of the support base 27 of the semiconductor device 10e are already formed when they are singulated. It is possible to carry out in the same manner as the manufacturing process of the semiconductor device 10d described with reference to FIG. 8 except that the light transmitting base 501 on which the counterbore 27c and the counterbore 27d are formed is prepared. , I omit the explanation here.
  • the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, and the semiconductor chip 32 and the component 41 are high. Since the variation in height and the variation in height between components 41 are absorbed by the adhesive layer 28, the overall height of the semiconductor device 10e can be reduced. That is, the semiconductor device 10e can be miniaturized.
  • the component 41 by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced.
  • power consumption when connecting a memory to the semiconductor device 10e, by connecting the semiconductor device 10e to a memory (not shown) through the external terminal 31, power consumption can be reduced and speed can be increased.
  • FIG. 11 is a diagram showing the configuration of a semiconductor device 10f according to the sixth embodiment.
  • a semiconductor device 10f according to the sixth embodiment shown in FIG. 11 is different from the semiconductor device 10a according to the first embodiment shown in FIG. 1 in that a wiring layer 12f is added.
  • the pad electrode 13 and the through electrode 26 are connected, the through electrode 26 and the conductive layer 19 are connected, and the conductive layer 19 and the component 41-1 (in FIG. The one closer to the chip 32 is described as a component 41-1). Further, the component 41-1 and the wiring layer 12f are connected, and the wiring layer 12f and the component 41-2 are connected. Thus, the component 41-1 and the component 41-2 are connected by the wiring layer 12f.
  • the wiring layer 12 f is formed on the back surface side of the support base 27 (the side on which the component 41 is disposed).
  • the component 41-1 is connected to the conductive layer 19 on the lower surface and connected to the wiring layer 12f on the upper surface.
  • wiring layers may be provided on the lower surface and the upper surface of the component 41, respectively.
  • the semiconductor device 10f according to the sixth embodiment is an example of an embodiment in which the degree of freedom of wiring is increased.
  • the first manufacturing of the semiconductor device 10f shown in FIG. 11 will be described with reference to FIG.
  • the semiconductor device 10f is manufactured in substantially the same process as the semiconductor device 10a in the first embodiment, and therefore, the description overlapping with the manufacturing process of the semiconductor device 10a described with reference to FIG. 2 is appropriately omitted.
  • step S61 a translucent base 601 formed of a transparent material such as glass is prepared.
  • a portion to be the wiring layer 12f of the semiconductor device 10f is already formed when it is singulated.
  • step S62 the adhesive 602 is applied only to the area (adhesion area) including the position (area) where the component 41 of the translucent substrate 601 is disposed. Since the wiring layer 12f is also formed in the bonding area, the adhesive 602 is also applied on the wiring layer 12f.
  • step S63 the semiconductor wafer 103 is adhered to the light transmitting substrate 601 to which the adhesive 602 is applied, and the component 41 is adhered.
  • the component 41 (component 41-1 and component 41-2) is fixed in a state of being connected to the wiring layer 12f.
  • the adhesive 602 is an adhesive that electrically connects the component 41 and the wiring layer 12 f.
  • step S64 are basically the same as the steps after step S14 shown in FIG.
  • the semiconductor device 10 f as shown in FIG. 11 is completed by such a process.
  • step S71 a translucent substrate 701 formed of a transparent material such as glass is prepared.
  • a portion to be the wiring layer 12f of the semiconductor device 10f is already formed when it is singulated. Further, the component 41 is mounted on the formed wiring layer 12 f.
  • step S72 the adhesive 702 is applied only to the area (adhesion area) including the position (area) where the component 41 of the translucent substrate 601 is disposed. Since the wiring layer 12 f is already formed in the bonding area and the component 41 is mounted, the adhesive 702 is also applied on the region of the wiring layer 12 f not in contact with the component 41.
  • the processes after the process S73 are basically the same processes as the processes after the process S63 shown in FIG. 12, and thus the description thereof is omitted here.
  • the semiconductor device 10 f as shown in FIG. 11 is completed by such a process.
  • the semiconductor device 10f manufactured by such a process is the same as the semiconductor device 10a (FIG. 1), since the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, the entire height of the semiconductor device 10f is Can be reduced in height. That is, the semiconductor device 10 f can be miniaturized.
  • the component 41 by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced. .
  • the degree of freedom of wiring can be increased.
  • power consumption when connecting a memory to the semiconductor device 10 f, by connecting the semiconductor device 10 f and a memory (not shown) through the external terminal 31, power consumption can be reduced and speed can be increased.
  • FIG. 14 is a diagram showing the configuration of a semiconductor device 10g according to the seventh embodiment.
  • the semiconductor device 10g according to the seventh embodiment has the same basic configuration as the semiconductor device 10f according to the sixth embodiment shown in FIG. 11, but an interconnection layer 12f (FIG. The difference is that the wiring layer 12g) is used.
  • the semiconductor device 10g has a structure in which a part of the wiring layer 12g is exposed.
  • the wiring layer 12g in the portion where the component 41-2 is arranged can be used as an electrode for connection to an external device.
  • the semiconductor device 10g shown in FIG. 14 has a structure that can be connected to an external device by the wiring layer 12g, the semiconductor device 10g does not have the external terminal 31. Even when the external terminal 31 is not provided, it can be connected to an external device other than the wiring layer 12g.
  • the conductive layer 19 can be connected to an external device (a terminal for connection) outside the pixel region.
  • the semiconductor device 10g illustrated in FIG. 14 exemplifies a configuration in which the external terminal 31 is not provided, but the example in which the conductive layer 19 in the place where the external terminal 31 is provided is formed.
  • the conductive layer 19 is connected to a terminal (not shown) provided outside the pixel region, and the terminal can be configured to be connected to an external device.
  • the semiconductor device 10 g can be configured without the conductive layer 19.
  • the configuration including the external terminal 31 has been described as an example, but the semiconductor devices 10a to 10f in the first to sixth embodiments are not limited to the external terminal 31.
  • the semiconductor device 10 without the external terminal 31 is also within the scope of the present technology.
  • the back surface side of the semiconductor device 10 can be configured to be connected to an external device (for example, a memory). It is possible to connect them, or to connect to an external device through the wiring layer 12d.
  • an external device for example, a memory
  • the seventh embodiment will be described by giving an example in which the external terminal 31 is not provided, the external terminal 31 can be configured similarly to the first to sixth embodiments described above. It is.
  • the semiconductor device 10 has a configuration including the external terminal 31 and the conductive layer 19, a configuration including the conductive layer 19 but no external terminal 31, or the external terminal 31 and the conductive layer 19 depending on how the semiconductor device 10 is connected to the external device. It can be configured not to be provided.
  • the semiconductor device 10g according to the seventh embodiment has a region connected to an external device in a part of the wiring layer 12g.
  • Such a configuration, as shown in FIG. 14, is a support in which a counterbore is not formed.
  • the present invention can be applied to the substrate 27.
  • the wiring layer 12g is provided on the support substrate 27 on which the counterbore is formed, and a part of the wiring layer 12g has a region connected to an external device. It is also possible.
  • FIG. 15 shows an example in which the wiring layer 12g of the semiconductor device 10g and an FPC (Flexible Print Board) 801 are connected.
  • a connector 802 is provided on the FPC 801.
  • the connector 802 is connected to an external device (not shown), such as a main board of a mobile phone.
  • an ACF (Anisotropic Conductive Film) terminal 803 is formed in a portion where the wiring layer 12 g and the FPC 801 are connected.
  • the wiring layer 12g and the FPC 801 may be connected using a terminal other than the ACF terminal 803.
  • the semiconductor device 10g has a structure in which a part of the wiring layer 12g is exposed (a structure in which a lead wiring is provided), and the exposed wiring layer 12g and the FPC 801 are connected. be able to. With such a configuration, the semiconductor device 10g can be easily connected to the FPC 801.
  • the semiconductor device 10g can be easily connected to the FPC 801, whereby, for example, when the semiconductor device 10g is installed on the main board, the semiconductor device 10g can be installed without being restricted by the installation position.
  • the degree of freedom of the installation position of the semiconductor device 10g on the main board can be increased, and the semiconductor device 10g can be installed on the main board even if the positioning accuracy when installing on the main board is not high. It becomes.
  • FIG. 16 is a view showing a mounting example when the lens unit having an auto-focus (AF) function is mounted on the semiconductor device 10g.
  • the lens unit 851 is composed of an actuator 861, a lens barrel 862, and a lens 863.
  • a lens 863-1, a lens 863-2, and a lens 863-3 are incorporated inside the lens barrel 862, and the lens barrel 862 is configured to hold the lenses 863-1 to 863-3.
  • the lens barrel 862 is included in the actuator 861, and the semiconductor device 10 g is attached to the lower part of the actuator 861.
  • a coil is provided on the side surface of the lens barrel 862 (the lens carrier on which the lens barrel 862 is mounted).
  • a magnet is provided at a position facing the coil and inside the actuator 861.
  • the magnet is provided with a yoke, and the coil, the magnet, and the yoke constitute a voice coil motor.
  • the lens barrel 862 When the lens barrel 862 is configured to move by supplying a current to the coil, the lens barrel 862 is configured to include an AF terminal 871 for supplying electricity to the coil. As shown in FIG. 16, an AF terminal 871 is formed in a part of the lens unit 851, and the AF terminal 871 and a part of the wiring layer 12 g of the semiconductor device 10 g are connected by solder 881.
  • the semiconductor device 10g and the lens unit 851 are connected by the wiring layer 12g, the solder 881, and the AF terminal 871, and from the semiconductor device 10g, the lens unit 851 (inside is disposed via the wiring layer 12g, the solder 881, and the AF terminal 871). Power (not shown)) can be supplied.
  • the foot 852 of the lens unit 851 can be disposed in the area in which the through electrode 26 is disposed or in the area in which the component 41 is disposed.
  • the parts 41 can also be arranged on both sides of the semiconductor chip 32 as shown in FIG. 16. By arranging the parts 41 on both sides, the legs 852 of the lens unit 851 can be arranged in that area.
  • the imaging device 10g can be miniaturized.
  • step S81 a translucent base 601 formed of a transparent material such as glass is prepared.
  • a portion to be the wiring layer 12g of the semiconductor device 10f is already formed when it is singulated.
  • step S81 is the same as step S61 (FIG. 12).
  • step S82 the adhesive 902 is applied only to the area (adhesion area) including the position (area) where the component 41 of the translucent substrate 601 is disposed. Since the wiring layer 12g is also formed in the bonding area, the adhesive 902 is also applied on the wiring layer 12g. However, in the step S82, the adhesive 902 is used in a portion connected to a part of the wiring layer 12g, in other words, a solder 881 for connection with the ACF terminal 803 (FIG. 15) or the AF terminal 871. Not applied
  • the processes after the process S83 are basically the same processes as the processes after the process S63 shown in FIG. 12, and thus the description thereof is omitted here.
  • the semiconductor device 10g manufactured by such a process since the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, the entire height of the semiconductor device 10g is Can be reduced in height. That is, the semiconductor device 10g can be miniaturized.
  • the semiconductor device 10g can be miniaturized without hindering reduction in the overall height of the semiconductor device 10g.
  • FIG. 18 is a cross-sectional view showing an example of the configuration of a camera module 1000 in which the laminated lens structure 1011 and the semiconductor device 10a are combined.
  • the camera module 1000 includes a laminated lens structure 1011 in which a plurality of lens-mounted substrates 1041 a to 1041 e are laminated, and a semiconductor device 10 a.
  • the multilayer lens structure 1011 includes a plurality of optical units 1013.
  • An alternate long and short dash line 1084 represents the optical axis of each optical unit 1013.
  • the semiconductor device 10 a is disposed below the laminated lens structure 1011.
  • light incident into the camera module 1000 from above is transmitted through the laminated lens structure 1011 and received by the semiconductor device 10a disposed below the laminated lens structure 1011.
  • the multilayer lens structure 1011 includes five lens-mounted substrates 1041 a to 1041 e stacked. In the case where the five lens-equipped substrates 1041a to 1041e are not particularly distinguished, they will be described simply as the lens-equipped substrate 1041.
  • the cross-sectional shape of the through hole 1083 of each lens-equipped substrate 1041 constituting the laminated lens structure 1011 has a so-called downward concave shape in which the opening width decreases toward the lower side (the side on which the semiconductor device 10a is disposed). There is.
  • a diaphragm plate 1051 is disposed on the laminated lens structure 1011.
  • the diaphragm plate 1051 includes, for example, a layer formed of a light absorbing or light shielding material.
  • the aperture plate 1051 is provided with an opening 1052.
  • the semiconductor device 10a is, for example, a front side illumination type or a rear side illumination type CMOS image sensor.
  • the laminated lens structure 1011, the semiconductor device 10 a, the diaphragm plate 1051 and the like are accommodated in a lens barrel 1074.
  • the structural material 1073 is disposed on the upper side of the semiconductor device 10a.
  • the laminated lens structure 1011 and the semiconductor device 10 a are fixed via the structural material 1073.
  • the structural material 1073 is, for example, an epoxy resin.
  • the laminated lens structure 1011 includes the five lens-mounted substrates 1041a to 1041e laminated, but the number of laminated substrates with lenses 1041 is not particularly limited as long as it is two or more.
  • Each lens-equipped substrate 1041 constituting the laminated lens structure 1011 has a configuration in which a lens resin portion 1082 is added to a carrier substrate 1081.
  • the carrier substrate 1081 has a through hole 1083, and a lens resin portion 1082 is formed inside the through hole 1083.
  • the lens resin portion 1082 includes a lens, and the portion extending to the carrier substrate 1081 and carrying the lens also collectively represents a portion integrated by the material constituting the lens.
  • the semiconductor device 10a has been described as an example in FIG. 18, it is also possible to configure the camera module 1000 by combining the semiconductor device 10 of any of the semiconductor devices 10b to 10g with the multilayer lens structure 1011.
  • the present technology is not limited to application to a semiconductor device, and is an imaging device such as a digital still camera or a video camera, a portable terminal device having an imaging function such as a cellular phone, or a copy using an imaging device in an image reading unit.
  • the present invention is applicable to general electronic devices that use an imaging device as an image capturing unit (photoelectric conversion unit) such as a digital camera. Note that there is also a case where a module form mounted on an electronic device, that is, a camera module is used as an imaging device.
  • FIG. 19 is a block diagram illustrating a configuration example of an imaging device which is an example of the electronic device of the present disclosure.
  • an imaging apparatus 2000 according to the present disclosure includes an optical system including a lens group 2001, an imaging apparatus 2002, a DSP circuit 2003 which is a camera signal processing unit, a frame memory 2004, a display apparatus 2005, a recording apparatus 2006, An operation system 2007, a power supply system 2008, and the like are included.
  • the DSP circuit 2003, the frame memory 2004, the display device 2005, the recording device 2006, the operation system 2007, and the power supply system 2008 are mutually connected via a bus line 2009.
  • the CPU 310 controls each unit in the imaging apparatus 2000.
  • the lens group 2001 takes in incident light (image light) from a subject and forms an image on the imaging surface of the imaging device 2002.
  • the imaging device 2002 converts the light amount of incident light focused on the imaging surface by the lens group 2001 into an electrical signal in pixel units and outputs the electrical signal as a pixel signal.
  • the semiconductor device 10 according to the above-described embodiment can be used.
  • the display device 2005 is a panel-type display device such as a liquid crystal display device or an organic EL (electro luminescence) display device, and displays a moving image or a still image captured by the imaging device 2002.
  • the recording device 2006 records a moving image or a still image captured by the imaging device 2002 on a recording medium such as a video tape or a DVD (Digital Versatile Disk).
  • the operation system 2007 issues operation commands for various functions possessed by the imaging device under the operation of the user.
  • the power supply system 2008 appropriately supplies various power supplies serving as operation power supplies of the DSP circuit 2003, the frame memory 2004, the display device 2005, the recording device 2006, and the operation system 2007 to these supply targets.
  • Such an imaging device 2000 is applied to a video camera, a digital still camera, and a camera module for mobile devices such as a mobile phone. Then, in the imaging device 2000, the semiconductor device 10 according to the above-described embodiment can be used as the imaging device 2002.
  • the technology according to the present disclosure (the present technology) can be applied to various products.
  • the technology according to the present disclosure may be applied to an endoscopic surgery system.
  • FIG. 20 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology (the present technology) according to the present disclosure can be applied.
  • the endoscopic operation system 11000 includes an endoscope 11100, such as pneumoperitoneum tube 11111 and the energy treatment instrument 11112, and other surgical instrument 11110, a support arm device 11120 which supports the endoscope 11100 , the cart 11200 which various devices for endoscopic surgery is mounted, and a.
  • an endoscope 11100 such as pneumoperitoneum tube 11111 and the energy treatment instrument 11112
  • other surgical instrument 11110 such as pneumoperitoneum tube 11111 and the energy treatment instrument 11112
  • a support arm device 11120 which supports the endoscope 11100
  • the cart 11200 which various devices for endoscopic surgery is mounted
  • the endoscope 11100 includes a lens barrel 11101 whose region of a predetermined length from the tip is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to a proximal end of the lens barrel 11101.
  • the endoscope 11100 configured as a so-called rigid endoscope having a barrel 11101 of the rigid endoscope 11100, be configured as a so-called flexible scope with a barrel of flexible Good.
  • the endoscope 11100 may be a straight endoscope, or may be a oblique endoscope or a side endoscope.
  • An optical system and an imaging device are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is condensed on the imaging device by the optical system.
  • the observation light is photoelectrically converted by the imaging element to generate an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image.
  • the image signal is transmitted as RAW data to a camera control unit (CCU: Camera Control Unit) 11201.
  • CCU Camera Control Unit
  • the CCU 11201 is configured by a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and centrally controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing for displaying an image based on the image signal, such as development processing (demosaicing processing), on the image signal.
  • a CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • Display device 11202 under the control of the CCU11201, displays an image based on the image signal subjected to image processing by the CCU11201.
  • the light source device 11203 includes, for example, a light source such as an LED (light emitting diode), and supplies the endoscope 11100 with irradiation light at the time of imaging an operation part or the like.
  • a light source such as an LED (light emitting diode)
  • the input device 11204 is an input interface to the endoscopic surgery system 11000.
  • the user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204.
  • the user type of illumination light, magnification and focal length
  • endoscopes 11100 by the imaging condition inputting the setting of the instruction or the like to change.
  • Surgical instrument control unit 11205 is, tissue ablation, to control the driving of the energy treatment instrument 11112 for such sealing of the incision or blood vessel.
  • the insufflation apparatus 11206 is a gas within the body cavity via the insufflation tube 11111 in order to expand the body cavity of the patient 11132 for the purpose of securing a visual field by the endoscope 11100 and securing a working space of the operator.
  • Send The recorder 11207 is a device capable of recording various types of information regarding surgery.
  • the printer 11208 is an apparatus capable of printing various types of information regarding surgery in various types such as text, images, and graphs.
  • the light source device 11203 that supplies the irradiation light when imaging the surgical site to the endoscope 11100 can be configured of, for example, an LED, a laser light source, or a white light source configured by a combination of these. If a white light source by a combination of RGB laser light source is constructed, since it is possible to control the output intensity and output timing of each color (each wavelength) with high accuracy, the adjustment of the white balance of the captured image in the light source apparatus 11203 It can be carried out.
  • a color image can be obtained without providing a color filter in the imaging device.
  • the drive of the light source device 11203 may be controlled so as to change the intensity of the light to be output every predetermined time. Acquiring an image at the time of controlling the driving of the image pickup device of the camera head 11102 divided in synchronization with the timing of the change of the intensity of the light, by synthesizing the image, a high dynamic no so-called underexposure and overexposure An image of the range can be generated.
  • the light source device 11203 may be configured to be able to supply light of a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, the mucous membrane surface layer is irradiated by irradiating narrow band light as compared with irradiation light (that is, white light) at the time of normal observation using the wavelength dependency of light absorption in body tissue.
  • the so-called narrow band imaging is performed to image a predetermined tissue such as a blood vessel with high contrast.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiation with excitation light.
  • body tissue is irradiated with excitation light and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into body tissue and the body tissue is Excitation light corresponding to the fluorescence wavelength of the reagent can be irradiated to obtain a fluorescence image or the like.
  • Light source device 11203 such may be configured to provide a narrow-band light and / or the excitation light corresponding to the special light observation.
  • FIG. 21 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.
  • the camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • the CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. Camera head 11102 and CCU11201 are communicatively connected to each other by a transmission cable 11400.
  • Lens unit 11401 is an optical system provided in the connecting portion of the barrel 11101. Observation light taken from the tip of the barrel 11101 is guided to the camera head 11102, incident on the lens unit 11401.
  • the lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the imaging device constituting the imaging unit 11402 may be one (a so-called single-plate type) or a plurality (a so-called multi-plate type).
  • the imaging unit 11402 When the imaging unit 11402 is configured as a multi-plate type, for example, an image signal corresponding to each of RGB may be generated by each imaging element, and a color image may be obtained by combining them.
  • the imaging unit 11402 may be configured to have a pair of imaging devices for acquiring image signals for right eye and left eye corresponding to 3D (dimensional) display. By 3D display is performed, the operator 11131 is enabled to grasp the depth of the living tissue in the operative site more accurately.
  • the imaging unit 11402 is to be composed by multi-plate, corresponding to the imaging elements, the lens unit 11401 may be provided a plurality of systems.
  • the imaging unit 11402 may not necessarily provided in the camera head 11102.
  • the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
  • the driving unit 11403 is configured by an actuator, and moves the zoom lens and the focusing lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. Thereby, the magnification and the focus of the captured image by the imaging unit 11402 can be appropriately adjusted.
  • the communication unit 11404 is configured of a communication device for transmitting and receiving various types of information to and from the CCU 11201.
  • the communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to CCU11201 via a transmission cable 11400 as RAW data.
  • the communication unit 11404 also receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405.
  • the the control signal for example, information that specifies the frame rate of the captured image, information that specifies the exposure value at the time of imaging, and / or magnification and information, etc. indicating that specifies the focal point of the captured image, captured Contains information about the condition.
  • the imaging conditions such as the frame rate, exposure value, magnification, and focus described above may be appropriately designated by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. Good. In the latter case, the so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are incorporated in the endoscope 11100.
  • AE Auto Exposure
  • AF Auto Focus
  • AWB Automatic White Balance
  • the camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is configured by a communication device for transmitting and receiving various types of information to and from the camera head 11102.
  • the communication unit 11411 is, from the camera head 11102 receives image signals transmitted via a transmission cable 11400.
  • the communication unit 11411 transmits a control signal for controlling driving of the camera head 11102 to the camera head 11102.
  • the image signal and the control signal can be transmitted by telecommunication or optical communication.
  • An image processing unit 11412 performs various types of image processing on an image signal that is RAW data transmitted from the camera head 11102.
  • Control unit 11413 the imaging of the operated portion due endoscope 11100, and various types of control related to the display of the captured image obtained by the imaging of the surgical section are performed.
  • the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.
  • control unit 11413 causes the display device 11202 to display a captured image in which a surgical site or the like is captured, based on the image signal subjected to the image processing by the image processing unit 11412.
  • the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413, by detecting the edge of the shape and color of an object or the like included in the captured image, the surgical instrument such as forceps, a specific body part, bleeding, during use of the energy treatment instrument 11112 mist etc. It can be recognized.
  • the control unit 11413 may superimpose various surgical support information on the image of the surgery section using the recognition result. The operation support information is superimposed and presented to the operator 11131, whereby the burden on the operator 11131 can be reduced and the operator 11131 can reliably proceed with the operation.
  • a transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electric signal cable corresponding to communication of an electric signal, an optical fiber corresponding to optical communication, or a composite cable of these.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure is realized as a device mounted on any type of mobile object such as a car, an electric car, a hybrid electric car, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot May be
  • FIG. 22 is a block diagram showing a schematic configuration example of a vehicle control system that is an example of a mobile control system to which the technology according to the present disclosure can be applied.
  • Vehicle control system 12000 includes a plurality of electronic control units connected via communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (Interface) 12053 are illustrated as a functional configuration of the integrated control unit 12050.
  • the driveline control unit 12010 controls the operation of devices related to the driveline of the vehicle according to various programs.
  • the drive system control unit 12010 includes a drive force generation device for generating a drive force of the vehicle such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, and a steering angle of the vehicle. It functions as a control mechanism such as a steering mechanism that adjusts and a braking device that generates a braking force of the vehicle.
  • Body system control unit 12020 controls the operation of the camera settings device to the vehicle body in accordance with various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device of various lamps such as a headlamp, a back lamp, a brake lamp, a blinker or a fog lamp.
  • the body system control unit 12020 the signal of the radio wave or various switches is transmitted from wireless controller to replace the key can be entered.
  • Body system control unit 12020 receives an input of these radio or signal, the door lock device for a vehicle, the power window device, controls the lamp.
  • Outside vehicle information detection unit 12030 detects information outside the vehicle equipped with vehicle control system 12000.
  • an imaging unit 12031 is connected to the external information detection unit 12030.
  • the out-of-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle, and receives the captured image.
  • the external information detection unit 12030 may perform object detection processing or distance detection processing of a person, a vehicle, an obstacle, a sign, characters on a road surface, or the like based on the received image.
  • Imaging unit 12031 receives light, an optical sensor for outputting an electric signal corresponding to the received light amount of the light.
  • the imaging unit 12031 can output an electric signal as an image or can output it as distance measurement information.
  • the light image pickup unit 12031 is received may be a visible light, it may be invisible light such as infrared rays.
  • Vehicle information detection unit 12040 detects the vehicle information.
  • a driver state detection unit 12041 that detects a state of a driver is connected to the in-vehicle information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera for imaging the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated or it may be determined whether the driver does not go to sleep.
  • the microcomputer 12051 calculates a control target value of the driving force generation device, the steering mechanism or the braking device based on the information inside and outside the vehicle acquired by the outside information detecting unit 12030 or the in-vehicle information detecting unit 12040, and a drive system control unit A control command can be output to 12010.
  • the microcomputer 12051 the driving force generating device on the basis of the information around the vehicle acquired by the outside information detection unit 12030 or vehicle information detection unit 12040, by controlling the steering mechanism or braking device, the driver automatic operation such that autonomously traveling without depending on the operation can be carried out cooperative control for the purpose of.
  • the microcomputer 12051 can output a control command to the body system control unit 12030 based on the information outside the vehicle acquired by the external information detection unit 12030.
  • the microcomputer 12051 controls the headlamps in response to the preceding vehicle or the position where the oncoming vehicle is detected outside the vehicle information detection unit 12030, the cooperative control for the purpose of achieving the anti-glare such as switching the high beam to the low beam It can be carried out.
  • Audio and image output unit 12052 transmits, to the passenger or outside of the vehicle, at least one of the output signal of the voice and image to be output device to inform a visually or aurally information.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices.
  • Display unit 12062 may include at least one of the on-board display and head-up display.
  • FIG. 23 is a diagram illustrating an example of the installation position of the imaging unit 12031.
  • imaging units 12101, 12102, 12103, 12104, and 12105 are provided as the imaging unit 12031.
  • the imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, on the front nose of the vehicle 12100, a side mirror, a rear bumper, a back door, an upper portion of a windshield of a vehicle interior, and the like.
  • the imaging unit 12101 provided in the front nose and the imaging unit 12105 provided in the upper part of the windshield in the vehicle cabin mainly acquire an image in front of the vehicle 12100.
  • the imaging units 12102 and 12103 included in the side mirror mainly acquire an image of the side of the vehicle 12100.
  • the imaging unit 12104 provided in the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100.
  • the imaging unit 12105 provided on the top of the windshield in the passenger compartment is mainly used to detect a leading vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 23 illustrates an example of the imaging range of the imaging units 12101 to 12104.
  • Imaging range 12111 indicates an imaging range of the imaging unit 12101 provided in the front nose
  • imaging range 12112,12113 are each an imaging range of the imaging unit 12102,12103 provided on the side mirror
  • an imaging range 12114 is The imaging range of the imaging part 12104 provided in the rear bumper or the back door is shown. For example, by overlaying the image data captured by the imaging units 12101 to 12104, a bird's eye view of the vehicle 12100 viewed from above can be obtained.
  • At least one of the imaging unit 12101 through 12104 may have a function of obtaining distance information.
  • at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging devices, or an imaging device having pixels for phase difference detection.
  • the microcomputer 12051 measures the distance to each three-dimensional object in the imaging ranges 12111 to 12114, and the temporal change of this distance (relative velocity with respect to the vehicle 12100). In particular, it is possible to extract a three-dimensional object traveling at a predetermined speed (for example, 0 km / h or more) in substantially the same direction as the vehicle 12100 as a leading vehicle, in particular by finding the it can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in advance before the preceding vehicle, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. Automatic operation or the like for autonomously traveling without depending on the way of the driver operation can perform cooperative control for the purpose.
  • automatic brake control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • the microcomputer 12051 converts three-dimensional object data relating to three-dimensional objects into two-dimensional vehicles such as two-wheeled vehicles, ordinary vehicles, large vehicles, classification and extracted, can be used for automatic avoidance of obstacles.
  • the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles visible to the driver of the vehicle 12100 and obstacles difficult to see.
  • the microcomputer 12051 determines the collision risk indicating the degree of risk of collision with each obstacle, and when the collision risk is a setting value or more and there is a possibility of a collision, through the audio speaker 12061 or the display unit 12062 By outputting a warning to the driver or performing forcible deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be performed.
  • At least one of the imaging unit 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the imaging units 12101 to 12104.
  • Such pedestrian recognition is, for example, a procedure for extracting feature points in images captured by the imaging units 12101 to 12104 as an infrared camera, and pattern matching processing on a series of feature points indicating the outline of an object to determine whether it is a pedestrian or not
  • the procedure is to determine Microcomputer 12051 is, determines that the pedestrian in the captured image of the imaging unit 12101 to 12104 is present, recognizing the pedestrian, the sound image output unit 12052 is rectangular outline for enhancement to the recognized pedestrian to superimpose, controls the display unit 12062.
  • the audio image output unit 12052 is, an icon or the like indicating a pedestrian may control the display unit 12062 to display the desired position.
  • a system refers to an entire apparatus configured by a plurality of apparatuses.
  • the present technology can also have the following configurations.
  • the semiconductor chip according to (1) including an imaging device.
  • Apply an adhesive to the translucent substrate and A semiconductor device is manufactured by fixing a semiconductor chip, and a component that transmits and receives a signal to and from the semiconductor chip with the adhesive on the translucent base.
  • the manufacturing method according to (15), wherein the semiconductor chip on which an imaging element is formed is fixed to the translucent base.
  • the adhesive is applied to the light transmitting substrate which is partially formed thin, and the component is fixed to the portion formed thin.
  • the part is fixed with the adhesive to a part of the wiring layer of the transparent substrate in which a wiring layer is formed in a region in which the part is disposed;
  • the manufacturing method according to any one of (15) to (17), wherein an external device is connected to a portion of the wiring layer to which the component is not fixed.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)

Abstract

La présente technologie concerne : un dispositif à semi-conducteur qui est capable de réduire la taille d'un dispositif à semi-conducteur comprenant un élément d'imagerie ; un appareil électronique ; et un procédé de fabrication. La présente invention comprend : un substrat transmettant la lumière ayant des caractéristiques de transmission de lumière ; une puce semi-conductrice ; et un composant qui transmet/reçoit un signal à destination/en provenance de la puce semi-conductrice, la puce semi-conductrice et le composant étant disposés sur la même surface du substrat transmettant la lumière. La puce semi-conductrice comprend un élément d'imagerie. Ce dispositif à semi-conducteur est fabriqué au moyen : de l'application d'un adhésif sur le substrat transmettant la lumière ayant des caractéristiques de transmission de lumière ; et de l'utilisation de l'adhésif pour fixer, au substrat transmettant la lumière, la puce semi-conductrice et les composants qui émettent/reçoivent des signaux à destination/en provenance de la puce semi-conductrice. Cette technologie est applicable à un dispositif à semi-conducteur comprenant une puce semi-conductrice pourvue d'un élément d'imagerie.
PCT/JP2018/027843 2017-08-04 2018-07-25 Dispositif à semi-conducteur, appareil électronique et procédé de fabrication Ceased WO2019026717A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-151270 2017-08-04
JP2017151270A JP2019029979A (ja) 2017-08-04 2017-08-04 半導体装置、電子機器、製造方法

Publications (1)

Publication Number Publication Date
WO2019026717A1 true WO2019026717A1 (fr) 2019-02-07

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JP (1) JP2019029979A (fr)
WO (1) WO2019026717A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11581348B2 (en) * 2019-08-14 2023-02-14 Samsung Electronics Co., Ltd. Semiconductor package including image sensor chip, transparent substrate, and joining structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021014731A1 (fr) * 2019-07-23 2021-01-28 ソニーセミコンダクタソリューションズ株式会社 Boîtier de semi-conducteur

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168594A (ja) * 2012-02-17 2013-08-29 Fujitsu Ltd 半導体装置の製造方法及び電子装置の製造方法
WO2017014072A1 (fr) * 2015-07-23 2017-01-26 ソニー株式会社 Appareil à semi-conducteur, son procédé de fabrication et dispositif électronique
US20170219842A1 (en) * 2014-07-18 2017-08-03 Cambridge Mechatronics Limited Camera assembly

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168594A (ja) * 2012-02-17 2013-08-29 Fujitsu Ltd 半導体装置の製造方法及び電子装置の製造方法
US20170219842A1 (en) * 2014-07-18 2017-08-03 Cambridge Mechatronics Limited Camera assembly
WO2017014072A1 (fr) * 2015-07-23 2017-01-26 ソニー株式会社 Appareil à semi-conducteur, son procédé de fabrication et dispositif électronique

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11581348B2 (en) * 2019-08-14 2023-02-14 Samsung Electronics Co., Ltd. Semiconductor package including image sensor chip, transparent substrate, and joining structure
US12261181B2 (en) * 2019-08-14 2025-03-25 Samsung Electronics Co., Ltd. Semiconductor package including image sensor chip, transparent substrate, and joining structure

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