[go: up one dir, main page]

WO2021240982A1 - Dispositif à semi-conducteur, son procédé de fabrication et appareil électronique - Google Patents

Dispositif à semi-conducteur, son procédé de fabrication et appareil électronique Download PDF

Info

Publication number
WO2021240982A1
WO2021240982A1 PCT/JP2021/013278 JP2021013278W WO2021240982A1 WO 2021240982 A1 WO2021240982 A1 WO 2021240982A1 JP 2021013278 W JP2021013278 W JP 2021013278W WO 2021240982 A1 WO2021240982 A1 WO 2021240982A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
wiring layer
wiring
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/013278
Other languages
English (en)
Japanese (ja)
Inventor
良平 金澤
和樹 佐藤
宏行 山田
雄太 籾内
誠 明戸
謙介 松藤
裕一 荒井
淳人 安井
秀樹 野田
利治 鬼頭
拓馬 八木
良 糸谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of WO2021240982A1 publication Critical patent/WO2021240982A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked

Definitions

  • This technology relates to semiconductor devices, their manufacturing methods, and electronic devices.
  • a chip-on-wafer (CoW: Chip on Wafer) process is performed in which individualized semiconductor chips are bonded to a substrate (wafer).
  • a sealing step of sealing the semiconductor device with a resin material may be performed in order to protect the semiconductor device from dust, moisture, and the like.
  • the resin material is present around the semiconductor chip.
  • Patent Document 1 explains that a dummy chip is mounted together with a semiconductor chip to achieve a heat dissipation effect.
  • the main purpose of this technology is to provide a semiconductor device that reduces the process cost while improving the heat dissipation effect, a manufacturing method thereof, and an electronic device equipped with the semiconductor device.
  • an opening hole is formed on one surface, and a first wiring layer is formed on the other surface, and inside the first semiconductor substrate and the opening hole.
  • the second semiconductor substrate which is configured and has a second wiring layer formed on a surface facing the bottom surface of the opening hole, and the first wiring layer and the second wiring layer are electrically connected to each other.
  • a semiconductor device including wiring to be connected.
  • the first wiring layer may include a first signal processing circuit that processes a pixel signal generated by an image pickup device.
  • the first signal processing circuit may include a memory circuit and a logic circuit.
  • the second wiring layer may include a second signal processing circuit that processes a pixel signal generated by the image pickup device.
  • the second signal processing circuit may include a memory circuit and a logic circuit.
  • the technology node of the signal processing circuit included in the first wiring layer and the technology node of the signal processing circuit included in the second wiring layer may be different.
  • the minimum wiring width of the signal processing circuit included in the second wiring layer may be finer than the minimum wiring width of the signal processing circuit included in the first wiring layer.
  • the wiring may be electrically connected by direct bonding of Cu electrodes.
  • the wiring may be electrically connected via a through via.
  • the wiring may be electrically connected via conductive bumps.
  • At least two substrates are laminated, and at least one of the at least two substrates may include the second semiconductor substrate.
  • the opening hole may be sealed with a resin material.
  • the resin material may have insulating properties and may have a higher thermal conductivity than the interwiring insulating film contained in the second wiring layer.
  • the resin material may have insulating properties and may have a lower dielectric constant than the interwiring insulating film contained in the second wiring layer.
  • the resin material may be any one of an epoxy resin and a silicon resin.
  • the resin material sealed between the bottom surface of the opening hole and the second wiring layer has an insulating property, and has a dielectric constant higher than that of the inter-wiring insulating film contained in the second wiring layer.
  • the thermal conductivity may be high.
  • the semiconductor device has the first semiconductor substrate having a plurality of the opening holes formed on one surface and the first wiring layer formed on the other surface, and the plurality of opening holes, respectively.
  • a plurality of the wirings that electrically connect to each of the two wiring layers may be included.
  • the present technology also provides an electronic device including the semiconductor device. Further, the present technology is configured in a first semiconductor substrate in which an opening hole is formed on one surface and a first wiring layer is formed on the other surface, and inside the opening hole.
  • substantially parallel means not only completely parallel, but also substantially parallel, that is, including a difference of, for example, about several percent.
  • substantially parallel means not only completely parallel, but also substantially parallel, that is, including a difference of, for example, about several percent.
  • each figure is a schematic view and is not necessarily exactly shown.
  • FIGS. 20 and 21 are schematic cross-sectional views for explaining a comparative example of a semiconductor device.
  • a semiconductor device in which a plurality of substrates are laminated is described here as a comparative example, the configuration of the semiconductor device according to the present technology is not limited to the laminated structure. This technique may be used, for example, in a semiconductor device having a single layer structure.
  • the semiconductor device 900 is configured by laminating a plurality of substrates 91 to 93.
  • the first substrate 91 (wafer) and the second substrate (semiconductor chip) 92 are bonded together by CoW technology.
  • the first substrate 91 and the third substrate (wafer) 93 are bonded together by a wafer-on-wafer (WoW: Wafer on Wafer) technique.
  • the semiconductor substrate 911 included in the first substrate 91 and the second wiring layer 922 included in the second substrate 92 are arranged so as to face each other.
  • the first wiring layer 912 and the second wiring layer 922 included in the first substrate 91 are electrically connected to each other via a through via 941 and a conductive bump 942.
  • the sealing portion 95 is formed around the second substrate 92 by the resin material.
  • the first wiring layer 912 included in the first substrate 91 and the third wiring layer 932 included in the third substrate 93 are arranged and bonded so as to face each other, and the Cu (copper) electrode 943 is directly bonded. It is electrically connected by such means.
  • this semiconductor device 900 When this semiconductor device 900 is used, heat is generated in the first wiring layer 912 and the third wiring layer 932 including, for example, a signal processing circuit. Therefore, if a resin material having a low thermal conductivity is used for the sealing portion 95, there arises a problem that the heat dissipation characteristics deteriorate.
  • the semiconductor device 900 is warped due to the difference in the coefficient of thermal expansion between the first substrate 91 and the third substrate 93 and the sealing portion 95.
  • a dummy chip may be used, for example, in Patent Document 1.
  • the dummy chip 96 is arranged inside the sealing portion 95.
  • the dummy chip 96 is adhered to the semiconductor substrate 911 via the adhesive layer 97. It is explained that this improves the heat dissipation effect.
  • FIG. 22 is a schematic perspective view for explaining an outline of a manufacturing process of a comparative example of a semiconductor device.
  • FIG. 23 is a flowchart showing a manufacturing process of a comparative example of a semiconductor device.
  • step S91 the first substrate 91 and the third substrate 93 before being individualized are bonded together by WoW technology.
  • the first wiring layer 912 included in the first substrate 91 and the third wiring layer 932 included in the third substrate 93 are arranged and bonded so as to face each other, and are electrically connected by direct bonding of Cu electrodes or the like. Connected to.
  • step S92 the individualized second substrate 92 is attached to the first substrate 91 by CoW technology.
  • the second wiring layer 922 included in the second substrate 92 and the semiconductor substrate 911 included in the first substrate 91 are arranged and joined so as to face each other.
  • the first wiring layer 912 and the second wiring layer 922 are electrically connected via a through via 941 and a conductive bump 942. This step is performed according to the number of second substrates 92.
  • step S93 an underfill portion 98 with an underfill agent is formed around the conductive bump 942 to reinforce the conductive bump 942 (see FIG. 21).
  • step S94 the dummy chip 96 is bonded to the first substrate 91 via the adhesive layer 97 by CoW technology. This step is performed according to the number of dummy chips 96.
  • step S95 in order to protect the semiconductor device 900 from dust, moisture, etc., the sealing portion 95 is formed by sealing the semiconductor device 900 with a resin material.
  • step S94 the process according to step S94 is performed according to the number of dummy chips 96. This raises the problem of increased process costs.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of the semiconductor device 100 according to the first embodiment of the present technology.
  • the semiconductor device 100 includes a first substrate 1, a second substrate 2, and wiring 4.
  • the first substrate 1 includes a first semiconductor substrate 11.
  • the second substrate 2 includes a second semiconductor substrate 21.
  • the material of the first semiconductor substrate 11 and the second semiconductor substrate 21 may be, for example, silicon.
  • An opening hole 12 is formed on one surface of the first semiconductor substrate 11.
  • the size of the opening hole 12 may be larger than that of the second semiconductor substrate 21.
  • a first wiring layer 13 is formed on the other surface of the first semiconductor substrate 11.
  • the second semiconductor substrate 21, which is smaller than the size of the first semiconductor substrate 11, is arranged and configured inside the opening hole 12.
  • a second wiring layer 22 is formed on one surface of the second semiconductor substrate 21.
  • the second wiring layer 22 is formed on a surface facing the bottom surface of the opening hole 12.
  • the wiring 4 electrically connects the first wiring layer 13 and the second wiring layer 22.
  • heat generated in the first wiring layer 13 and the second wiring layer 22 is released to the outside of the semiconductor device 100 via the first semiconductor substrate 11 and the like.
  • the heat dissipation effect is improved as compared with a comparative example in which the sealing portion 95 having a lower thermal conductivity than that of the first semiconductor substrate 11 is formed.
  • the first semiconductor substrate 11 is formed around the second semiconductor substrate 21.
  • warpage is less likely to occur as compared with a comparative example in which a sealing portion 95 having physical properties such as a coefficient of thermal expansion different from that of a semiconductor substrate is formed.
  • the mechanical strength is improved.
  • the size of the semiconductor chip becomes small and the volume of the sealing portion 95 becomes large, the heat dissipation effect and the mechanical strength are lowered.
  • the size of the second semiconductor substrate 21 becomes smaller, the size of the opening hole 12 becomes smaller, so that the heat dissipation effect and the mechanical strength are improved as compared with the comparative example.
  • a plurality of opening holes 12 can be formed at one time in an etching process or the like in a manufacturing process.
  • the process cost is reduced as compared with a comparative example in which each number of dummy chips 96 is bonded by using CoW technology.
  • the process cost is reduced because it is not necessary to form a sealing portion that needs to bring the physical properties closer to the semiconductor substrate, such as by containing a silica filler.
  • the first substrate 1 may include, for example, an image pickup device that generates a pixel signal.
  • each of the first wiring layer 13 and the second wiring layer 22 may include a signal processing circuit.
  • this signal processing circuit can process the pixel signal generated by the image pickup device.
  • This signal processing circuit may include, for example, a memory circuit, a logic circuit, and the like.
  • the type of signal processing circuit included in the first wiring layer 13 and the type of signal processing circuit included in the second wiring layer 22 may be the same or different.
  • the first wiring layer 13 may include a logic circuit
  • the second wiring layer 22 may include a memory circuit.
  • the second substrate 2 may be, for example, a DRAM, SRAM, MRAM, flash memory, or the like.
  • the semiconductor device 100 can have a function such as super slow.
  • a high-performance semiconductor device 100 can be manufactured.
  • the technology node of the signal processing circuit included in the first wiring layer 13 and the technology node of the signal processing circuit included in the second wiring layer 22 may be the same or different.
  • the minimum wiring width of the signal processing circuit included in the second wiring layer 22 may be finer than the minimum wiring width of the signal processing circuit included in the first wiring layer 13. As a result, a logic circuit capable of high-speed signal processing can be manufactured in a small area. Further, if a semiconductor chip capable of high-speed digital processing can be realized, high value can be added to the semiconductor device at the semiconductor chip level, for example, having a function using artificial intelligence (AI).
  • AI artificial intelligence
  • the signal processing circuit may be a circuit other than a memory circuit and a logic circuit as long as it is necessary for the operation of the semiconductor device 100.
  • the signal processing circuit required for the operation of the semiconductor device 100 includes, for example, a circuit related to control of the semiconductor device 100, a circuit related to processing of an imaged pixel signal, and the like.
  • the signal processing circuit required for the operation of the semiconductor device 100 may include, for example, a power supply circuit, an image signal compression circuit, a clock circuit, an optical communication conversion circuit, and the like.
  • connection means of the wiring 4 is not particularly limited, but as shown in FIG. 1, the wiring 4 can be electrically connected via, for example, a conductive bump 43 and / or a through via 42. Alternatively, as shown in FIG. 2, the wiring 4 may be electrically connected, for example, via direct bonding and / or through via 42 of the Cu electrode 41.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of the semiconductor device 100 according to the first embodiment of the present technology.
  • the semiconductor device 100 according to the first embodiment of the present technology the technology according to another embodiment described later can be used.
  • the semiconductor device according to the second embodiment of the present technology may be configured by laminating a plurality of substrates.
  • FIG. 3 is a schematic cross-sectional view showing the configuration of the semiconductor device 200 according to the second embodiment of the present technology.
  • the semiconductor device 200 according to the second embodiment of the present technology is configured by laminating at least two substrates (third substrate 3 and first substrate 1 in this embodiment). ing. At least one of the two or more substrates (the first substrate 1 in this embodiment) includes the second semiconductor substrate 21 according to the first embodiment.
  • the semiconductor device 200 according to the second embodiment of the present technology is a stack of the third substrate 3 on the semiconductor device 100 according to the first embodiment of the present technology.
  • the third wiring layer 32 included in the third substrate 3 and the first wiring layer 13 included in the first substrate 1 are arranged and joined so as to face each other, and the Cu electrode 41 is directly connected. It is electrically connected by joining.
  • FIG. 4 is a schematic perspective view for explaining an outline of a manufacturing process of a semiconductor device according to an embodiment of the present technology.
  • FIG. 5 is a flowchart showing a manufacturing process of a semiconductor device according to an embodiment of the present technology.
  • step S21 the first substrate 1 and the third substrate 3 before being fragmented are bonded together by WoW technology.
  • the first wiring layer 13 included in the first substrate 1 and the third wiring layer 32 included in the third substrate 3 are arranged and joined so as to face each other, and a Cu electrode is provided. It is electrically connected by direct bonding of.
  • step S22 the opening hole 12 is formed in the first semiconductor substrate 11 by etching the first semiconductor substrate 11 included in the first substrate 1.
  • step S23 the individualized second substrate 2 is attached to the first substrate 1 by CoW technology.
  • the bottom surface of the opening hole 12 included in the first substrate 1 and the second wiring layer 22 included in the second substrate 2 are arranged and joined so as to face each other.
  • the first wiring layer 13 and the second wiring layer 22 are electrically connected via through vias, conductive bumps, and the like. This step is performed according to the number of the second substrates 2.
  • the semiconductor device 200 according to the second embodiment of the present technology has a reduced manufacturing process, so that the process cost is reduced.
  • FIGS. 6 and 7 are schematic cross-sectional views showing the configuration of the semiconductor device 200 according to the second embodiment of the present technology.
  • an opening hole 12a is formed in the semiconductor substrate 11a included in the lowermost substrate 1a. It may have been done. Alternatively, as shown in FIG. 7, an opening hole 12b may be formed in the semiconductor substrate 11b included in the intermediate layer substrate 1b.
  • the semiconductor device 200 according to the second embodiment of the present technology the technology according to another embodiment can be used.
  • the opening holes formed may be sealed with a resin material.
  • FIG. 8 is a schematic cross-sectional view showing the configuration of the semiconductor device 300 according to the third embodiment of the present technology.
  • the opening hole 12 is sealed with the resin material 14.
  • This resin material has insulating properties.
  • the resin material 14 for sealing the opening hole 12 has a higher thermal conductivity than the inter-wiring insulating film (not shown) included in the second wiring layer 22.
  • the inter-wiring insulating film includes, for example, an oxide film and a nitride film.
  • the resin material 14 that seals the opening hole 12 has a lower dielectric constant than the resin material that seals the periphery of the semiconductor device 300. This prevents crosstalk between the wiring included in the semiconductor device 300.
  • the resin material 14 that seals the opening hole 12 may be, for example, any one of an epoxy resin and a silicon resin. Further, the resin material 14 for sealing the opening hole 12 may contain fine particles such as silica as a filler. By changing the material, size, content, etc. of the fine particles, the physical properties (for example, insulating property, thermal conductivity, dielectric constant, etc.) of the resin material 14 that seals the opening hole 12 can be adjusted. ..
  • the semiconductor device 300 according to the third embodiment of the present technology the technology according to another embodiment can be used.
  • the opening holes to be formed may be sealed with a plurality of types of resin materials.
  • FIG. 9 is a schematic cross-sectional view showing the configuration of the semiconductor device 400 according to the fourth embodiment of the present technology.
  • the opening hole 12 is sealed with a plurality of types of resin materials.
  • the first resin material 141 sealed between the bottom surface of the opening hole 12 and the second wiring layer 22 has an insulating property and is dielectric from the interwiring insulating film contained in the second wiring layer. It may be a resin material having a low rate. Thereby, the first resin material 141 can prevent crosstalk between, for example, the first wiring layer 13 and the second wiring layer 22.
  • the second resin material 142 sealed between the side surface of the opening hole 12 and the second wiring layer 22 and the second semiconductor substrate 21 is an inter-wiring insulating film included in the second wiring layer 22. It may be a resin material having a higher thermal conductivity (not shown). As a result, for example, the heat generated in the first wiring layer 13 and the second wiring layer 22 is transferred to the semiconductor device via the first resin material 141, the second resin material 142, the first semiconductor substrate 11, and the like. It is easy to be released to the outside of 400. As a result, the heat dissipation effect of the semiconductor device 400 is improved.
  • the semiconductor device 400 according to the fourth embodiment of the present technology the technology according to another embodiment can be used.
  • the semiconductor device according to the fifth embodiment of the present technology may be configured by arranging a plurality of semiconductor chips.
  • FIG. 10 is a schematic cross-sectional view showing the configuration of the semiconductor device 500 according to the fifth embodiment of the present technology.
  • the semiconductor device 500 includes a first semiconductor substrate 11, a plurality of second semiconductor substrates 21a and 21b, and a plurality of wirings 4a and 4b. including.
  • the first semiconductor substrate 11 has a plurality of opening holes 12a and 12b formed on one surface thereof, and the first wiring layer 13 is formed on the other surface.
  • the number of opening holes is not limited to two.
  • the plurality of second semiconductor substrates 21a and 21b are configured inside each of the plurality of opening holes 12a and 12b.
  • Each of the plurality of second wiring layers 22a and 22b is formed on the surface of the plurality of opening holes 12a and 12b facing the bottom surface thereof.
  • Each of the plurality of wirings 4a and 4b electrically connects the first wiring layer 13 and each of the plurality of second wiring layers 22a and 22b.
  • the semiconductor device 500 according to the fifth embodiment of the present technology the technology according to another embodiment can be used.
  • the semiconductor device according to one embodiment of the present technology can be used in the sensing technology.
  • the semiconductor device according to the embodiment of the present technology can be used, for example, in a distance measuring technique or the like.
  • FIG. 11 is a schematic cross-sectional view for explaining a comparative example of a semiconductor device.
  • the distance measuring device 910 shown in FIG. 11 is a ToF sensor that measures a distance using ToF (Time of Flight) technology.
  • the distance measuring device 910 includes a light source unit 915, a control unit 916, and a light detection unit 917.
  • the light source unit 915 irradiates light such as laser light.
  • a vertical cavity surface emitting laser (VCSEL) or the like is used for the light source unit 915.
  • the control unit 916 controls the light source unit 915 and the like.
  • a laser diode driver (LDD) or the like is used for the control unit 916.
  • the light detection unit 917 detects light.
  • a single photon avalanche diode (SPAD) or the like is used for the photodetector 917.
  • the light source unit 915, the control unit 916, and the photodetector unit 917 are each provided in separate semiconductor devices and are connected by wiring. Therefore, there is a problem that a delay occurs in wiring transmission.
  • a light source unit 915, a control unit 916, and a photodetector unit 917 may be provided in one semiconductor device. This reduces the delay and enhances security.
  • control unit 916 and the photodetector unit 917 are provided in the same wiring layer, it is necessary that the technology nodes of the signal processing circuit included in each of the control unit 916 and the photodetector unit 917 are the same. As a result, for example, it may be necessary to redesign the signal processing circuit included in the control unit 916.
  • FIG. 12 is a schematic cross-sectional view showing the configuration of the semiconductor device 600 according to the sixth embodiment of the present technology.
  • a photodetector is provided in the first wiring layer 13 included in the first substrate 1.
  • a control unit is provided on the second wiring layer 22 included in the second substrate 2.
  • the light source unit 33 is provided on the third semiconductor substrate 31 included in the third substrate 3.
  • a technology node of a signal processing circuit included in a first wiring layer 13 provided with an optical detection unit and a technology node of a signal processing circuit included in a second wiring layer 22 provided with a control unit can be used. It may be different. This eliminates the need to redesign the signal processing circuit included in the control unit, for example.
  • the semiconductor device 600 according to the sixth embodiment of the present technology the technology according to another embodiment can be used.
  • the electronic device of the seventh embodiment of the present technology is an electronic device including the semiconductor device of any one of the first to sixth embodiments of the present technology.
  • the electronic device of the seventh embodiment of the present technology will be described in detail.
  • FIG. 13 is a diagram showing an example of using a semiconductor device according to an embodiment of the present technology as a solid-state image sensor (image sensor).
  • the semiconductor device according to the embodiment of the present technology can be used in various cases of sensing light such as visible light, infrared light, ultraviolet light, and X-ray, as shown below. That is, as shown in FIG. 13, for example, the field of appreciation for taking an image used for appreciation, the field of transportation, the field of home appliances, the field of medical / healthcare, the field of security, the field of beauty, and sports.
  • the semiconductor device of any one of the first to sixth embodiments can be used for the device (for example, the electronic device of the seventh embodiment described above) used in the field of the above, the field of agriculture, and the like. can.
  • the first to sixth implementations are applied to devices for taking images to be used for appreciation, such as digital cameras, smartphones, and mobile phones with camera functions.
  • the semiconductor device of any one of the embodiments can be used.
  • in-vehicle sensors that photograph the front, rear, surroundings, inside of a vehicle, etc., and monitor traveling vehicles and roads for safe driving such as automatic stop and recognition of the driver's condition.
  • the semiconductor device of any one of the first to sixth embodiments is used for a device used for traffic such as a surveillance camera and a distance measuring sensor for measuring distance between vehicles. Can be done.
  • the field of home appliances for example, it is a device used for home appliances such as a television receiver, a refrigerator, and an air conditioner in order to take a picture of a user's gesture and operate the device according to the gesture.
  • the semiconductor device of any one of the sixth embodiments can be used.
  • the first to sixth implementations are applied to devices used for medical care and healthcare, such as endoscopes and devices that perform angiography by receiving infrared light.
  • the semiconductor device of any one of the embodiments can be used.
  • a device used for security such as a surveillance camera for crime prevention and a camera for personal authentication is used as a semiconductor according to any one of the first to sixth embodiments.
  • the device can be used.
  • a device used for cosmetology such as a skin measuring device for photographing the skin and a microscope for photographing the scalp, an embodiment of any one of the first to sixth embodiments.
  • a form of semiconductor device can be used.
  • a semiconductor device In the field of sports, for example, a semiconductor device according to any one of the first to sixth embodiments is used for a device used for sports such as an action camera and a wearable camera for sports applications. can do.
  • a device used for agriculture such as a camera for monitoring the state of a field or a crop
  • a semiconductor device according to any one of the first to sixth embodiments. Can be used.
  • the semiconductor device includes, for example, an image pickup device such as a digital still camera or a digital video camera, a mobile phone having an image pickup function, or an image pickup function. It can be applied to various electronic devices such as other devices.
  • an image pickup device such as a digital still camera or a digital video camera
  • a mobile phone having an image pickup function or an image pickup function. It can be applied to various electronic devices such as other devices.
  • FIG. 14 is a block diagram showing a configuration example of an image pickup device as an electronic device to which the present technology is applied.
  • the image pickup device 201c shown in FIG. 14 includes an optical system 202c, a shutter device 203c, a solid-state image pickup device 204c, a drive circuit (control circuit) 205c, a signal processing circuit 206c, a monitor 207c, and a memory 208c, and is a still image. And it is possible to capture moving images.
  • the optical system 202c is configured to have one or a plurality of lenses, and guides the light (incident light) from the subject to the solid-state imaging device 204c to form an image on the light receiving surface of the solid-state imaging device 204c.
  • the shutter device 203c is arranged between the optical system 202c and the solid-state image pickup device 204c, and controls the light irradiation period and the light-shielding period to the solid-state image pickup device 204c according to the control of the drive circuit (control circuit) 205c.
  • the solid-state image sensor 204c accumulates signal charges for a certain period of time according to the light imaged on the light receiving surface via the optical system 202c and the shutter device 203c.
  • the signal charge stored in the solid-state image sensor 204c is transferred according to the drive signal (timing signal) supplied from the drive circuit (control circuit) 205c.
  • the drive circuit (control circuit) 205c outputs a drive signal for controlling the transfer operation of the solid-state image pickup device 204c and the shutter operation of the shutter device 203c to drive the solid-state image pickup device 204c and the shutter device 203c.
  • the signal processing circuit 206c performs various signal processing on the signal charge output from the solid-state image sensor 204c.
  • the image (image data) obtained by performing signal processing by the signal processing circuit 206c is supplied to the monitor 207c and displayed, or supplied to the memory 208c and stored (recorded).
  • Application example 1 [Application example to endoscopic surgery system]
  • the semiconductor device according to one embodiment of the present technology can be applied to various products.
  • the semiconductor device according to one embodiment of the present technology may be applied to an endoscopic surgery system.
  • FIG. 15 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which a semiconductor device according to an embodiment of the present technology can be applied.
  • FIG. 15 illustrates how the surgeon (doctor) 11131 is performing surgery on patient 11132 on patient bed 11133 using the endoscopic surgery system 11000.
  • the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as an abdominal tube 11111 and an energy treatment tool 11112, and a support arm device 11120 that supports the endoscope 11100.
  • a cart 11200 equipped with various devices for endoscopic surgery.
  • the endoscope 11100 is composed of a lens barrel 11101 in which a region having a predetermined length from the tip is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101.
  • the endoscope 11100 configured as a so-called rigid mirror having a rigid barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible barrel. good.
  • An opening in which an objective lens is fitted is provided at the tip of the lens barrel 11101.
  • a light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is an objective. It is irradiated toward the observation target in the body cavity of the patient 11132 through the lens.
  • the endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.
  • An optical system and an image pickup element are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the image pickup element by the optical system.
  • the observation light is photoelectrically converted by the image pickup device, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated.
  • the image signal is transmitted as RAW data to the camera control unit (CCU: Camera Control Unit) 11201.
  • the CCU11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal for displaying an image based on the image signal, such as development processing (demosaic processing).
  • a CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the display device 11202 displays an image based on the image signal processed by the CCU 11201 under the control of the CCU 11201.
  • the light source device 11203 is composed of, for example, a light source such as an LED (Light Emitting Diode), and supplies irradiation light for photographing an operating part or the like to the endoscope 11100.
  • a light source such as an LED (Light Emitting Diode)
  • LED Light Emitting Diode
  • the input device 11204 is an input interface for the endoscopic surgery system 11000.
  • the user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204.
  • the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.
  • the treatment tool control device 11205 controls the drive of the energy treatment tool 11112 for cauterizing, incising, sealing a blood vessel, or the like of a tissue.
  • the pneumoperitoneum device 11206 uses a gas in the pneumoperitoneum tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing the field of view by the endoscope 11100 and securing the work space of the operator. Is sent.
  • the recorder 11207 is a device capable of recording various information related to surgery.
  • the printer 11208 is a device capable of printing various information related to surgery in various formats such as text, images, and graphs.
  • the light source device 11203 that supplies the irradiation light to the endoscope 11100 when photographing the surgical site can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof.
  • a white light source is configured by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out.
  • the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and the drive of the image sensor of the camera head 11102 is controlled in synchronization with the irradiation timing to correspond to each of RGB. It is also possible to capture the image in a time-division manner. According to this method, a color image can be obtained without providing a filter in the image pickup device.
  • the drive of the light source device 11203 may be controlled so as to change the intensity of the output light at predetermined time intervals.
  • the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change of the light intensity to acquire an image in time division and synthesizing the image, so-called high dynamic without blackout and overexposure. Range images can be generated.
  • the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependence of light absorption in body tissue, the surface layer of the mucous membrane is irradiated with light in a narrower band than the irradiation light (that is, white light) during normal observation.
  • a so-called narrow band imaging is performed in which a predetermined tissue such as a blood vessel is photographed with high contrast.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating with excitation light.
  • the body tissue is irradiated with excitation light to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. It is possible to obtain a fluorescence image by irradiating the excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 11203 may be configured to be capable of supplying narrowband light and / or excitation light corresponding to such special light observation.
  • FIG. 16 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU11201 shown in FIG.
  • the camera head 11102 includes a lens unit 11401, an image pickup unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • CCU11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413.
  • the camera head 11102 and CCU11201 are communicably connected to each other by a transmission cable 11400.
  • the lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101.
  • the observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and incident on the lens unit 11401.
  • the lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the image pickup unit 11402 is composed of an image pickup device (imaging device).
  • the image pickup element constituting the image pickup unit 11402 may be one (so-called single plate type) or a plurality (so-called multi-plate type).
  • each image pickup element may generate an image signal corresponding to each of RGB, and a color image may be obtained by synthesizing them.
  • the image pickup unit 11402 may be configured to have a pair of image pickup elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display, respectively.
  • the 3D display enables the operator 11131 to more accurately grasp the depth of the living tissue in the surgical site.
  • a plurality of lens units 11401 may be provided corresponding to each image pickup element.
  • the image pickup unit 11402 does not necessarily have to be provided on the camera head 11102.
  • the image pickup unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
  • the drive unit 11403 is composed of an actuator, and the zoom lens and focus lens of the lens unit 11401 are moved by a predetermined distance along the optical axis under the control of the camera head control unit 11405. As a result, the magnification and focus of the image captured by the image pickup unit 11402 can be adjusted as appropriate.
  • the communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU11201.
  • the communication unit 11404 transmits the image signal obtained from the image pickup unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
  • the communication unit 11404 receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405.
  • the control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image. Contains information about the condition.
  • the image pickup conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of CCU11201 based on the acquired image signal. good.
  • the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, an AF (Auto Focus) function, and an AWB (Auto White Balance) function.
  • the camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102.
  • the communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
  • the communication unit 11411 transmits a control signal for controlling the drive of the camera head 11102 to the camera head 11102.
  • Image signals and control signals can be transmitted by telecommunications, optical communication, or the like.
  • the image processing unit 11412 performs various image processing on the image signal which is the RAW data transmitted from the camera head 11102.
  • the control unit 11413 performs various controls related to the imaging of the surgical site and the like by the endoscope 11100 and the display of the captured image obtained by the imaging of the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the drive of the camera head 11102.
  • control unit 11413 causes the display device 11202 to display an image captured by the surgical unit or the like based on the image signal processed by the image processing unit 11412.
  • the control unit 11413 may recognize various objects in the captured image by using various image recognition techniques.
  • the control unit 11413 detects a surgical tool such as forceps, a specific biological part, bleeding, mist when using the energy treatment tool 11112, etc. by detecting the shape, color, etc. of the edge of the object included in the captured image. Can be recognized.
  • the control unit 11413 may superimpose and display various surgical support information on the image of the surgical unit by using the recognition result. By superimposing and displaying the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can surely proceed with the surgery.
  • the transmission cable 11400 connecting the camera head 11102 and CCU11201 is an electric signal cable corresponding to electric signal communication, an optical fiber corresponding to optical communication, or a composite cable thereof.
  • the communication is performed by wire using the transmission cable 11400, but the communication between the camera head 11102 and the CCU11201 may be performed wirelessly.
  • the above is an example of an endoscopic surgery system to which this technology can be applied.
  • the present technology can be applied to the endoscope 11100, the camera head 11102 (imaging unit 11402), and the like among the configurations described above.
  • the semiconductor device according to the embodiment of the present technology can be applied to the image pickup unit 10402. This can contribute to higher functionality of the endoscope 11100, the camera head 11102 (imaging unit 11402), and the like.
  • the endoscopic surgery system has been described as an example, but this technique may be applied to other, for example, a microscopic surgery system.
  • the semiconductor device according to one embodiment of the present technology is mounted on a moving body of any kind such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot. It may be realized as a device.
  • FIG. 17 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the present technology can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via the communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (interface) 12053 are shown as a functional configuration of the integrated control unit 12050.
  • the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 has a driving force generator for generating the driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating braking force of the vehicle.
  • the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, turn signals or fog lamps.
  • the body system control unit 12020 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches.
  • the body system control unit 12020 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.
  • the outside information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000.
  • the image pickup unit 12031 is connected to the vehicle outside information detection unit 12030.
  • the vehicle outside information detection unit 12030 causes the image pickup unit 12031 to capture an image of the outside of the vehicle and receives the captured image.
  • the vehicle outside information detection unit 12030 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received image.
  • the image pickup unit 12031 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received.
  • the image pickup unit 12031 can output an electric signal as an image or can output it as distance measurement information. Further, the light received by the image pickup unit 12031 may be visible light or invisible light such as infrared light.
  • the in-vehicle information detection unit 12040 detects the in-vehicle information.
  • a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether the driver has fallen asleep.
  • the microcomputer 12051 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit.
  • a control command can be output to 12010.
  • the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. It is possible to perform cooperative control for the purpose of.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 controls the driving force generating device, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform coordinated control for the purpose of automatic driving that runs autonomously without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the vehicle outside information detection unit 12030.
  • the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 12030, and performs cooperative control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
  • the audio image output unit 12052 transmits an output signal of at least one of audio and an image to an output device capable of visually or audibly notifying information to the passenger or the outside of the vehicle.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices.
  • the display unit 12062 may include, for example, at least one of an onboard display and a head-up display.
  • FIG. 18 is a diagram showing an example of the installation position of the image pickup unit 12031.
  • the vehicle 12100 has an imaging unit 12101, 12102, 12103, 12104, 12105 as an imaging unit 12031.
  • the image pickup units 12101, 12102, 12103, 12104, 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 12100.
  • the image pickup unit 12101 provided in the front nose and the image pickup section 12105 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the image pickup units 12102 and 12103 provided in the side mirror mainly acquire images of the side of the vehicle 12100.
  • the image pickup unit 12104 provided in the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100.
  • the images in front acquired by the image pickup units 12101 and 12105 are mainly used for detecting a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 18 shows an example of the shooting range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging range of the imaging units 12102 and 12103 provided on the side mirrors, respectively
  • the imaging range 12114 indicates the imaging range.
  • the imaging range of the imaging unit 12104 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the image pickup units 12101 to 12104, a bird's-eye view image of the vehicle 12100 can be obtained.
  • At least one of the image pickup units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the image pickup units 12101 to 12104 may be a stereo camera including a plurality of image pickup elements, or may be an image pickup element having pixels for phase difference detection.
  • the microcomputer 12051 has a distance to each three-dimensional object in the image pickup range 12111 to 12114 based on the distance information obtained from the image pickup unit 12101 to 12104, and a temporal change of this distance (relative speed with respect to the vehicle 12100). By obtaining can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in advance in front of the preceding vehicle, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform coordinated control for the purpose of automatic driving or the like in which the vehicle travels autonomously without depending on the operation of the driver.
  • automatic brake control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • the microcomputer 12051 converts three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, electric poles, and other three-dimensional objects based on the distance information obtained from the image pickup units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.
  • At least one of the image pickup units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging unit 12101 to 12104.
  • pedestrian recognition is, for example, a procedure for extracting feature points in an image captured by an image pickup unit 12101 to 12104 as an infrared camera, and pattern matching processing is performed on a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian. It is done by the procedure to determine.
  • the audio image output unit 12052 determines the square contour line for emphasizing the recognized pedestrian.
  • the display unit 12062 is controlled so as to superimpose and display. Further, the audio image output unit 12052 may control the display unit 12062 so as to display an icon or the like indicating a pedestrian at a desired position.
  • the above is an example of a vehicle control system to which this technology can be applied.
  • the semiconductor device according to the embodiment of the present technology can be applied to, for example, the image pickup unit 12031 or the like among the configurations described above.
  • the semiconductor device according to the embodiment of the present technology can be applied to the image pickup unit 12031.
  • FIG. 19 is a diagram showing a manufacturing process of the semiconductor device 800 according to the eighth embodiment of the present technology.
  • FIG. 19 shows a manufacturing process of a semiconductor device in which a plurality of substrates are laminated as an example of the semiconductor device 800.
  • the semiconductor device according to one embodiment of the present technology is not limited to this embodiment.
  • the semiconductor device according to one embodiment of the present technology may be, for example, a semiconductor device composed of a single-layer substrate as described in the first embodiment.
  • FIG. 19 shows a manufacturing process of a solid-state image pickup device as an example of the semiconductor device 800
  • the semiconductor device according to one embodiment of the present technology is not limited to the solid-state image pickup device.
  • step S1 the first substrate 1 and the third substrate 3 are manufactured by the technique conventionally used.
  • the first substrate 1 and the third substrate 3 do not have to be separated into individual pieces.
  • the first substrate 1 may include, for example, a logic circuit. That is, the first wiring layer 13 included in the first substrate 1 may include a signal processing circuit for processing the pixel signal generated by the image pickup device.
  • the third substrate 3 may include, for example, a pixel portion. That is, the third substrate 3 may include, for example, an image pickup element that generates a pixel signal.
  • step S2 the first substrate 1 and the third substrate 3 are bonded together by WoW technology.
  • the first wiring layer 13 included in the first substrate 1 and the third wiring layer 32 included in the third substrate 3 are arranged and bonded so as to face each other, and are electrically connected by direct bonding of Cu electrodes or the like. Connected to.
  • step S3 the third semiconductor substrate 31 included in the third substrate 3 is polished and thinned.
  • step S4 for example, a photolithography method or the like is used to form an optical waveguide coated with a high-refractive resin material 33 or the like.
  • step S5 the semiconductor device 800 is turned upside down, and etching such as wet etching and dry etching, mechanical grinding, and the like are performed to form an opening hole 12 in the first semiconductor substrate 11. It is preferable that the surface of the first substrate 1 is ground before the opening hole 12 is formed.
  • step S6 the individualized second substrate 2 is attached to the first substrate 1 by CoW technology.
  • the bottom surface of the opening hole 12 included in the first substrate 1 and the second wiring layer 22 included in the second substrate 2 are arranged and joined so as to face each other.
  • the first wiring layer 13 and the second wiring layer 22 are electrically connected via the wiring 4 including the through via 42 and the conductive bump 43.
  • This step is performed according to the number of the second substrates 2.
  • the first wiring layer 13 and the second wiring layer 22 may be electrically connected by direct bonding of Cu electrodes or the like.
  • step S7 the semiconductor device 800 is turned upside down to provide an on-chip lens and a color filter 5.
  • the opening hole 12 may be sealed with a resin material.
  • step S8 the semiconductor device 800 is separated into pieces by dicing or the like.
  • the technology according to another embodiment can be used.
  • the present technology can also have the following configurations.
  • a first semiconductor substrate having an opening hole formed on one surface and a first wiring layer formed on the other surface.
  • a second semiconductor substrate configured inside the opening hole and having a second wiring layer formed on a surface facing the bottom surface of the opening hole.
  • a semiconductor device including a wiring that electrically connects the first wiring layer and the second wiring layer.
  • the first wiring layer includes a first signal processing circuit that processes a pixel signal generated by an image pickup device.
  • the first signal processing circuit includes a memory circuit and a logic circuit.
  • the second wiring layer includes a second signal processing circuit that processes a pixel signal generated by an image pickup device.
  • the semiconductor device includes a memory circuit and a logic circuit.
  • the semiconductor device according to [4].
  • the technology node of the signal processing circuit included in the first wiring layer and the technology node of the signal processing circuit included in the second wiring layer are different.
  • the semiconductor device according to any one of [1] to [5].
  • the minimum wiring width of the signal processing circuit included in the second wiring layer is finer than the minimum wiring width of the signal processing circuit included in the first wiring layer.
  • the semiconductor device according to any one of [1] to [6].
  • the wiring is electrically connected by direct bonding of Cu electrodes.
  • the semiconductor device according to any one of [1] to [7].
  • the wiring is electrically connected via a through via.
  • the wiring is electrically connected via a conductive bump.
  • At least two substrates are laminated and configured. Of the at least two substrates, at least one substrate comprises the second semiconductor substrate.
  • the opening hole is sealed with a resin material.
  • the resin material has an insulating property and has a higher thermal conductivity than the inter-wiring insulating film contained in the second wiring layer.
  • the resin material has an insulating property and has a lower dielectric constant than the interwiring insulating film contained in the second wiring layer.
  • the resin material is any one of an epoxy resin and a silicon resin.
  • the resin material sealed between the bottom surface of the opening hole and the second wiring layer has an insulating property, and has a dielectric constant higher than that of the inter-wiring insulating film contained in the second wiring layer. Low, The resin material sealed between the side surface of the opening hole and the second wiring layer and the second semiconductor substrate conducts heat from the inter-wiring insulating film contained in the second wiring layer.
  • the semiconductor device according to any one of [12] to [15].
  • the first semiconductor substrate having a plurality of the opening holes formed on one surface and the first wiring layer formed on the other surface.
  • a plurality of the second semiconductor substrates configured inside each of the plurality of opening holes and having the second wiring layer formed on a surface facing the bottom surface of the opening holes.
  • a plurality of the wirings for electrically connecting each of the first wiring layer and the plurality of the second wiring layers, and the like.
  • the semiconductor device according to any one of [1] to [16].
  • a first semiconductor substrate having an opening hole formed on one surface and a first wiring layer formed on the other surface.
  • a second semiconductor substrate configured inside the opening hole and having a second wiring layer formed on a surface facing the bottom surface of the opening hole.
  • a method for manufacturing a semiconductor device comprising wiring that electrically connects the first wiring layer and the second wiring layer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un dispositif à semi-conducteur ayant un effet de dissipation de chaleur amélioré et un coût de traitement réduit, son procédé de fabrication et un appareil électronique équipé du dispositif à semi-conducteur.　L'invention concerne un dispositif à semi-conducteur comprenant : un premier substrat semi-conducteur ayant une surface à l'intérieur de laquelle est formé un trou d'ouverture et une autre surface sur laquelle est formée une première couche de câblage ; un second substrat semi-conducteur configuré à l'intérieur du trou d'ouverture et ayant une seconde couche de câblage formée sur une surface de celui-ci opposée à une surface inférieure du trou d'ouverture ; et un fil connectant électriquement la première couche de câblage et la seconde couche de câblage.
PCT/JP2021/013278 2020-05-25 2021-03-29 Dispositif à semi-conducteur, son procédé de fabrication et appareil électronique Ceased WO2021240982A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020090741A JP2021190440A (ja) 2020-05-25 2020-05-25 半導体装置とその製造方法、及び電子機器
JP2020-090741 2020-05-25

Publications (1)

Publication Number Publication Date
WO2021240982A1 true WO2021240982A1 (fr) 2021-12-02

Family

ID=78723284

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/013278 Ceased WO2021240982A1 (fr) 2020-05-25 2021-03-29 Dispositif à semi-conducteur, son procédé de fabrication et appareil électronique

Country Status (2)

Country Link
JP (1) JP2021190440A (fr)
WO (1) WO2021240982A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250324788A1 (en) * 2022-06-16 2025-10-16 Sony Semiconductor Solutions Corporation Semiconductor device and imaging device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067215A (ja) * 2005-08-31 2007-03-15 Sanyo Electric Co Ltd 回路基板、回路基板の製造方法および回路装置
JP2008521213A (ja) * 2004-11-16 2008-06-19 インターナショナル・ビジネス・マシーンズ・コーポレーション スルー・バイア接続を有する両面ｓｏｉウエハ・スケール・パッケージを作製するためのデバイスおよび方法
WO2012111652A1 (fr) * 2011-02-14 2012-08-23 住友ベークライト株式会社 Composition de résine de scellement liquide et dispositif semi-conducteur obtenu en utilisant la composition de résine de scellement liquide
JP2016076563A (ja) * 2014-10-06 2016-05-12 日立オートモティブシステムズ株式会社 パワーモジュール及び電力変換装置
JP2017108397A (ja) * 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置
WO2019198385A1 (fr) * 2018-04-09 2019-10-17 ソニーセミコンダクタソリューションズ株式会社 Dispositif de capture d'image, son procédé de fabrication, et dispositif électronique

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008521213A (ja) * 2004-11-16 2008-06-19 インターナショナル・ビジネス・マシーンズ・コーポレーション スルー・バイア接続を有する両面ｓｏｉウエハ・スケール・パッケージを作製するためのデバイスおよび方法
JP2007067215A (ja) * 2005-08-31 2007-03-15 Sanyo Electric Co Ltd 回路基板、回路基板の製造方法および回路装置
WO2012111652A1 (fr) * 2011-02-14 2012-08-23 住友ベークライト株式会社 Composition de résine de scellement liquide et dispositif semi-conducteur obtenu en utilisant la composition de résine de scellement liquide
JP2016076563A (ja) * 2014-10-06 2016-05-12 日立オートモティブシステムズ株式会社 パワーモジュール及び電力変換装置
JP2017108397A (ja) * 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置
WO2019198385A1 (fr) * 2018-04-09 2019-10-17 ソニーセミコンダクタソリューションズ株式会社 Dispositif de capture d'image, son procédé de fabrication, et dispositif électronique

Also Published As

Publication number Publication date
JP2021190440A (ja) 2021-12-13

Similar Documents

Publication Publication Date Title
US11784197B2 (en) Solid-state imaging unit, method of producing the same, and electronic apparatus
WO2019087764A1 (fr) Dispositif d'imagerie à semi-conducteur de type à irradiation arrière, procédé de fabrication de dispositif d'imagerie à semi-conducteur de type à irradiation arrière, dispositif d'imagerie et appareil électronique
US11830898B2 (en) Wafer level lens
US20230018706A1 (en) Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic equipment
JP2019047237A (ja) 撮像装置、および電子機器、並びに撮像装置の製造方法
JP7630577B2 (ja) 固体撮像装置及び電子機器
JP6976751B2 (ja) 撮像装置および撮像装置の製造方法、並びに、電子機器
JP6869717B2 (ja) 撮像装置および撮像装置の製造方法、並びに、電子機器
JP2023082375A (ja) 半導体装置及び電子機器
WO2022044804A1 (fr) Dispositif capteur et appareil électronique
US11315971B2 (en) Imaging device, method of producing imaging device, imaging apparatus, and electronic apparatus
WO2022050119A1 (fr) Dispositif à semi-conducteur, son procédé de fabrication et appareil électronique
WO2021240982A1 (fr) Dispositif à semi-conducteur, son procédé de fabrication et appareil électronique
JP7422676B2 (ja) 撮像装置
JP2020087962A (ja) 固体撮像装置及び電子機器
WO2021049302A1 (fr) Dispositif d'imagerie, appareil électronique, et procédé de fabrication
WO2020235148A1 (fr) Dispositif à semi-conducteurs et appareil électronique
CN112771672A (zh) 固态摄像元件、固态摄像装置和电子设备
WO2020017205A1 (fr) Élément d'imagerie et dispositif électronique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21814527

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21814527

Country of ref document: EP

Kind code of ref document: A1