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WO2018124046A1 - Dispositif de capture d'image, appareil de capture d'image et procédé de capture d'image - Google Patents

Dispositif de capture d'image, appareil de capture d'image et procédé de capture d'image Download PDF

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Publication number
WO2018124046A1
WO2018124046A1 PCT/JP2017/046590 JP2017046590W WO2018124046A1 WO 2018124046 A1 WO2018124046 A1 WO 2018124046A1 JP 2017046590 W JP2017046590 W JP 2017046590W WO 2018124046 A1 WO2018124046 A1 WO 2018124046A1
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WIPO (PCT)
Prior art keywords
photoelectric conversion
circuit
conversion member
pixel
imaging
Prior art date
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Ceased
Application number
PCT/JP2017/046590
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English (en)
Japanese (ja)
Inventor
順二 高畑
泰弘 新宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
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Priority to JP2018559505A priority Critical patent/JP6706850B2/ja
Publication of WO2018124046A1 publication Critical patent/WO2018124046A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Definitions

  • the present invention relates to an imaging apparatus, a camera, and an imaging method for imaging an image.
  • Patent Document 1 An imaging apparatus that captures an image using an image sensor is known (see, for example, Patent Document 1).
  • the imaging device is desired to improve the image quality of the image to be captured.
  • an object of the present disclosure is to provide an imaging device, a camera, and an imaging method that can improve the image quality of an image to be captured with respect to the image quality of an image captured by a conventional imaging device.
  • An imaging apparatus includes a photoelectric conversion member that generates light by an internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied, and a charge generated by the photoelectric conversion member A pixel value based on each of the plurality of pixel circuits that store the charge amount stored in the pixel unit, a read circuit that reads the charge amount stored in each of the plurality of pixel circuits, and the charge amount read by the read circuit
  • An image pickup device including an output circuit that outputs an output image; and a reduction unit that reduces an influence on the output image due to charges generated by the photoelectric conversion member in a light-shielded state to which a voltage in a second predetermined range is applied. Is provided.
  • An imaging apparatus is a photoelectric conversion member that generates charges due to an internal photoelectric effect by receiving light in an exposure state to which a voltage in a first predetermined range is applied, and the first predetermined voltage applied According to the voltage of the range, the higher the voltage, the higher the photoelectric conversion efficiency, and the photoelectric conversion member that generates the charge, and a plurality of charges that accumulate the charge generated by the photoelectric conversion member in units of pixels.
  • a pixel circuit a readout circuit that reads out the amount of charge accumulated in each of the plurality of pixel circuits; and an output circuit that outputs an output image composed of pixel values based on the amount of charge read out by the readout circuit; And a voltage control unit that controls a voltage applied to the photoelectric conversion member.
  • a camera includes the imaging device and a lens that collects external light on the imaging device.
  • An imaging method is an imaging method performed by an imaging device including an imaging element and a reduction unit, and the imaging element receives light in an exposure state to which a voltage in a first predetermined range is applied.
  • a photoelectric conversion member that generates charges due to the internal photoelectric effect, a plurality of pixel circuits that store charges generated by the photoelectric conversion member in units of pixels, and a charge amount stored in each of the plurality of pixel circuits.
  • a readout circuit that reads out, and an output circuit that outputs an output image composed of pixel values based on each of the charge amounts read by the readout circuit, wherein the output circuit outputs an output image, and the reduction A reduction step for reducing an influence on the output image by the charge generated by the photoelectric conversion member in a light-shielding state to which a voltage in the second predetermined range is applied. And a flop.
  • An imaging method is an imaging method performed by an imaging device including an imaging element and a voltage control unit, and the imaging element receives light in an exposure state to which a voltage in a first predetermined range is applied.
  • a photoelectric conversion member that generates charges due to the internal photoelectric effect, wherein the charge generation is performed such that the higher the voltage, the higher the photoelectric conversion efficiency in accordance with the applied voltage in the first predetermined range.
  • a plurality of pixel circuits for storing charges generated by the photoelectric conversion member in pixel units, a readout circuit for reading out the amount of charges accumulated in each of the plurality of pixel circuits, and the readout An output circuit that outputs an output image composed of pixel values based on each of the charge amounts read by the circuit, and the voltage controller applies a voltage applied to the photoelectric conversion member A voltage control step of controlling, the output circuit, and an output step of outputting the output image.
  • the image quality of an image to be captured can be improved with respect to the image quality of an image captured by a conventional imaging apparatus.
  • FIG. 1 is a block diagram illustrating a configuration of a camera according to Embodiment 1.
  • FIG. 2 is a block diagram illustrating a configuration of the image sensor according to the first embodiment.
  • 3A is a plan view of the photoelectric conversion element according to Embodiment 1.
  • FIG. 3B is a side view of the photoelectric conversion element according to Embodiment 1.
  • FIG. 4 is a block diagram illustrating a configuration of the pixel circuit according to the first embodiment.
  • FIG. 5A is a timing diagram of an imaging start signal and an imaging end signal.
  • FIG. 5B is a timing diagram illustrating an operation of the image sensor according to the first embodiment.
  • FIG. 6 is a block diagram illustrating a configuration of the camera according to Embodiment 2.
  • FIG. 1 is a block diagram illustrating a configuration of a camera according to Embodiment 1.
  • FIG. 2 is a block diagram illustrating a configuration of the image sensor according to the first embodiment.
  • 3A is a plan view of
  • FIG. 7 is a block diagram illustrating a configuration of the image sensor according to the second embodiment.
  • FIG. 8 is a block diagram illustrating a configuration of a pixel circuit according to the second embodiment.
  • FIG. 9A is a timing diagram of an imaging start signal and an imaging end signal.
  • FIG. 9B is a timing diagram illustrating the state of the image sensor according to the second embodiment.
  • FIG. 10 is a schematic diagram showing a light shielding leakage period.
  • FIG. 11 is a block diagram illustrating a configuration of a camera according to Embodiment 3.
  • FIG. 12A is a timing diagram of an imaging start signal and an imaging end signal.
  • FIG. 12B is a timing diagram of the aperture amount designation signal.
  • FIG. 12C is a timing chart of the maximum aperture amount signal.
  • FIG. 12A is a timing diagram of an imaging start signal and an imaging end signal.
  • FIG. 12B is a timing diagram of the aperture amount designation signal.
  • FIG. 12C is a timing chart of the
  • FIG. 12D is a timing diagram illustrating a state of an aperture according to the third embodiment.
  • FIG. 12E is a timing diagram illustrating a state of the image sensor according to the third embodiment.
  • FIG. 13 is a block diagram illustrating a configuration of a camera according to Embodiment 4.
  • FIG. 14 is a block diagram illustrating a configuration of an image sensor according to the fourth embodiment.
  • FIG. 15A is a timing diagram of an imaging start signal and an imaging end signal.
  • FIG. 15B is a timing chart of the aperture amount designation signal B.
  • FIG. 15C is a timing diagram of the applied voltage change signal.
  • FIG. 15D is a timing diagram of the amount of external light collected on the photoelectric conversion member according to Embodiment 4.
  • FIG. 15A is a timing diagram of an imaging start signal and an imaging end signal.
  • FIG. 15B is a timing chart of the aperture amount designation signal B.
  • FIG. 15C is a timing diagram of the applied voltage change signal.
  • FIG. 15E is a timing chart of voltages applied to the photoelectric conversion member according to Embodiment 4.
  • FIG. 15F is a timing chart of photoelectric conversion efficiency in the photoelectric conversion member according to Embodiment 4.
  • FIG. 16 is a block diagram illustrating a configuration of a camera according to the fifth embodiment.
  • FIG. 17 is a specific example of the reference live view image.
  • FIG. 18A is a timing diagram illustrating a state of the image sensor according to the fifth embodiment.
  • FIG. 18B is a timing chart of voltages applied to the photoelectric conversion member according to Embodiment 5.
  • FIG. 19A is a timing diagram of an imaging start signal and an imaging end signal.
  • FIG. 19B is a timing chart of the applied voltage value signal.
  • FIG. 19C is a timing diagram illustrating a state of the image sensor according to the fifth embodiment.
  • FIG. 19D is a timing chart of voltages applied to the photoelectric conversion member according to Embodiment 5.
  • FIG. 20A is a perspective view of a digital still camera according to a modification.
  • FIG. 20B is a perspective view of a video camera according to a modification.
  • FIG. 1 is a block diagram illustrating a configuration of a camera 200 according to the first embodiment.
  • the camera 200 includes a lens barrel 230 and the imaging device 1.
  • the lens barrel 230 includes an optical system 210 and a lens driving unit 220.
  • the optical system 210 is composed of one or more lenses that collect external light on the imaging device 10 of the imaging device 1.
  • the optical system 210 includes a zoom lens 211, a camera shake correction lens 212, a focus lens 213, and a diaphragm 214.
  • the subject image can be enlarged or reduced by moving the zoom lens 211 along the optical axis 210A.
  • the focus of the subject image can be adjusted by moving the focus lens 213 along the optical axis 210A.
  • the camera shake correction lens 212 is movable in a plane perpendicular to the optical axis 210A of the optical system 210. By moving the camera shake correction lens 212 in a direction to cancel the camera 200 shake, the influence of the camera 200 shake on the captured image can be reduced.
  • the diaphragm 214 has an opening 214A located on the optical axis 210A, and adjusts the size of the opening 214A according to the setting of the user or automatically to adjust the amount of transmitted light.
  • the lens driving unit 220 includes a zoom actuator that drives the zoom lens 211, a camera shake correction actuator that drives the camera shake correction lens 212, a focus actuator that drives the focus lens 213, and a diaphragm actuator that drives the diaphragm 214.
  • the lens driving unit 220 controls the zoom actuator, the focus actuator, the camera shake correction actuator, and the aperture actuator.
  • the imaging device 1 includes an imaging element 10, a control unit 20, a reduction unit 40, an image processing unit 260, a memory 270, a card slot 290, an internal memory 340, an operation member 310, and a display monitor 320. Consists of including.
  • the image sensor 10 captures and outputs an image.
  • the reduction unit 40 corrects the image output from the image sensor 10.
  • the reduction unit 40 is realized by a processor (not shown) executing a program stored in a memory (not shown).
  • the image processing unit 260 performs various processes on the image data generated by the image sensor 10 (here, the image corrected by the reduction unit 40), and generates image data to be displayed on the display monitor 320.
  • Image data to be stored in the memory card 300 is generated.
  • the image processing unit 260 performs various processes such as gamma correction and white balance correction on the image data generated by the image sensor 10.
  • the image processing unit 260 converts the image data generated by the image sensor 10 into H.264. It compresses by the compression format etc. based on H.264 standard or MPEG2 standard.
  • the image processing unit 260 is realized by a processor (not shown) executing a program stored in a memory (not shown).
  • the control unit 20 controls the operation of the image sensor 10.
  • the control unit 20 controls the entire camera 200.
  • the control unit 20 is realized by developing a program recorded in the internal memory 340 in the memory 270 that temporarily stores the program and executing a processor (not shown) in the control unit 20. .
  • the memory 270 also functions as a work memory for the image processing unit 360 and the control unit 20.
  • the memory 270 can be realized by, for example, a DRAM or an SRAM.
  • the card slot 390 holds the memory card 300 in a removable manner.
  • the card slot 290 can be mechanically and electrically connected to the memory card 300.
  • the memory card 300 includes a nonvolatile flash memory, a ferroelectric memory, and the like, and can store data such as an image file generated by the image processing unit 260.
  • the internal memory 340 is configured by a nonvolatile flash memory, a ferroelectric memory, or the like.
  • the internal memory 340 stores a control program for controlling the entire camera 200 and the like.
  • the operation member 310 is a generic term for a user interface that receives an operation from a user.
  • the operation member 310 includes, for example, a cross key that accepts an operation from the user, a determination button, and the like.
  • the display monitor 320 includes a screen 320A that can display an image indicated by the image data generated by the image sensor 10 and an image indicated by the image data read from the memory card 300.
  • the display monitor 320 can also display various menu screens for performing various settings of the camera 200 on the screen 320A.
  • a touch panel 320B is arranged on the screen 320A of the display monitor 320. The touch panel 320B can be touched by the user and accept various touch operations. The instruction indicated by the touch operation on the touch panel 320B is notified to the control unit 20 and various processes are performed.
  • the imaging apparatus 1 the imaging element 10, the control unit 20, and the reduction unit 40 will be described in more detail.
  • FIG. 2 is a block diagram showing the configuration of the image sensor 10.
  • the image sensor 10 includes a photoelectric conversion element 110, a pixel circuit array 120, a readout circuit 130, an output circuit 140, a row scanning circuit 150, a timing control circuit 160, and a voltage application circuit. 170.
  • FIG. 3A is a plan view of the photoelectric conversion element 110
  • FIG. 3B is a side view of the photoelectric conversion element 110.
  • the photoelectric conversion element 110 is in close contact with the thin-film photoelectric conversion member 111, the upper transparent electrode 112 that is in close contact with the upper surface of the photoelectric conversion member 111, and the lower surface of the photoelectric conversion member 111.
  • N ⁇ M lower pixel electrodes 113 arranged in a two-dimensional array of N rows and M columns (N and M are integers of 1 or more).
  • the photoelectric conversion member 111 generates charges due to the internal photoelectric effect by receiving light in a state where a voltage in a first predetermined range not including 0 V is applied (hereinafter, this state is referred to as an “exposure state”). . Further, the photoelectric conversion member 111 generates the electric charge so that the higher the voltage is, the higher the photoelectric conversion efficiency is according to the voltage of the first predetermined range to be applied.
  • the photoelectric conversion member 111 is an organic thin film having the above characteristics.
  • the first embodiment is an example in which the image sensor 10 is an organic CMOS image sensor using an organic thin film as a photoelectric conversion member.
  • the photoelectric conversion member 111 is ideally in a state where a voltage in a second predetermined range including 0 V, which is a range below the first predetermined range, is applied (hereinafter, this state is referred to as a “light-shielding state”). It is desirable not to generate charges due to the internal photoelectric effect even if the light is received in.
  • the photoelectric conversion member 111 actually manufactured receives light in a light-shielded state due to the management accuracy of the impurity concentration mixed in the manufacturing material, the management accuracy of the manufacturing process, and the like. As a result, a small amount of charge is generated by the internal photoelectric effect.
  • a phenomenon in which a small amount of charge due to the internal photoelectric effect is generated by receiving light in a light shielding state is referred to as “light shielding leakage”.
  • the upper transparent electrode 112 is a transparent electrode that applies a voltage that generates a potential difference including 0 to the lower surface over the entire upper surface of the photoelectric conversion member 111.
  • the lower pixel electrode 113 is an electrode arranged in a two-dimensional array of N rows and M columns so as to cover the entire lower surface of the photoelectric conversion member 111.
  • the lower pixel electrode 113 collects the charge generated in the vicinity of itself among the charges generated by the photoelectric conversion member 111.
  • the pixel circuit array 120 is a semiconductor device in which N ⁇ M pixel circuits 21 are arranged in a two-dimensional array of N rows and M columns, and the photoelectric conversion element 110 is arranged on the lower surface side of the photoelectric conversion element 110. Arranged in a superimposed manner.
  • each pixel circuit 21 is arranged so that the position of each pixel circuit 21 overlaps with the position of each lower pixel electrode 113 in a one-to-one correspondence when the imaging device 10 is viewed in plan. Has been.
  • FIG. 4 is a block diagram showing the configuration of the pixel circuit 21. As shown in FIG. 4
  • the pixel circuit 21 includes a reset transistor 22, an amplification transistor 23, a selection transistor 24, and a charge storage node 25.
  • the charge storage node 25 is connected to the lower pixel electrode 113 corresponding to the pixel circuit 21 to which the charge storage node 25 belongs, the source of the reset transistor 22, and the gate of the amplification transistor 23, and is collected by the connected lower pixel electrode 113. Accumulate charge.
  • the reset transistor 22 has a gate connected to the reset signal line 51, a drain supplied with a reset voltage VRST, and a source connected to the charge storage node 25.
  • the reset transistor 22 is turned on by a reset signal delivered from the row scanning circuit 150 (described later) via the reset signal line 51, thereby resetting (initializing) the amount of charge accumulated in the charge accumulation node 25. To do.
  • the charge storage node 25 is connected to the gate, the power supply voltage VDD is supplied to the drain, and the drain of the selection transistor 24 is connected to the source.
  • a voltage corresponding to the charge accumulated in the charge accumulation node 25 is applied to the gate of the amplification transistor 23.
  • the amplifying transistor 23 functions as a current source for supplying a current corresponding to the charge stored in the charge storage node 25 when the selection transistor 24 is in the ON state.
  • the selection signal line 52 is connected to the gate, the source of the amplification transistor 23 is connected to the drain, and the vertical signal line 32 is connected to the source.
  • the selection transistor 24 is turned on by a selection signal delivered from the row scanning circuit 150 (described later) via the selection signal line 52, thereby outputting a current flowing through the amplification transistor 23 to the vertical signal line 32.
  • the pixel circuit 21 collects the charges generated by the photoelectric conversion member 111 in units of pixels with the above configuration. Then, the pixel circuit 21 reads the amount of charges accumulated in the charge accumulation node 25 in a nondestructive manner.
  • the row scanning circuit 150 has the following stored charge amount reset function and the following readout pixel circuit selection function.
  • the accumulated charge amount resetting function is performed via a reset signal line 51 connected to each pixel circuit 21 for a reset signal for resetting the charge accumulated in the charge accumulation node 25 in each pixel circuit 21 constituting the pixel circuit array 120. It is a function to deliver.
  • the readout pixel circuit selection function is sequentially performed row by row from the row farthest to the readout circuit 130 (first row) to the row closest to the readout circuit 130 (Nth row).
  • the selection signal for turning on the selection transistor 24 in each of the pixel circuits 21 belonging to the corresponding row is delivered via the selection signal line 52 connected to each of the pixel circuits 21 belonging to the corresponding row at a predetermined time ⁇ t interval. It is a function.
  • the readout of the amount of charge accumulated in the charge accumulation nodes 25 of all the pixel circuits 21 included in the pixel circuit array 120 is sequentially performed in units of rows from the first row to the Nth row by the readout circuit 130 (described later).
  • a period of N ⁇ ⁇ t is required from the start of the readout of the pixel circuits 21 belonging to the first row to the completion of the readout of the pixel circuits 21 belonging to the Nth row.
  • the readout circuit 130 reads out the amount of charge accumulated in each of the pixel circuits 21 constituting the pixel circuit array 120.
  • the readout circuit 130 is configured to include M column readout circuits 31 corresponding to the M columns of the pixel circuit array 120, respectively.
  • the column readout circuit 31 includes a selection transistor 24 that is turned on by a selection signal via a vertical signal line 32 connected to each of the pixel circuits 21 belonging to the corresponding column (this pixel circuit 21). Is also referred to as “a pixel circuit 21 to be read”.), By detecting the amount of current flowing through the amplification transistor 23, the amount of charge accumulated in the charge accumulation node 25 of the pixel circuit 21 to be read is read. Then, a digital signal of K bits (K is a positive integer, for example, 8) indicating the amount of the read electric charge is output as a pixel value of the pixel circuit 21 to be read.
  • the output circuit 140 outputs an output image composed of the pixel values output from the readout circuit 130. That is, the output circuit 140 outputs an output image composed of pixel values based on each of the charge amounts read by the read circuit 130.
  • the voltage application circuit 170 applies a voltage to the photoelectric conversion member 111. More specifically, the voltage application circuit 170 applies a voltage between the upper surface and the lower surface of the photoelectric conversion member 111 by controlling the voltage of the upper transparent electrode 112.
  • the timing control circuit 160 controls the operation timing of the row scanning circuit 150, the operation timing of the readout circuit 130, and the operation timing of the voltage application circuit 170. That is, the timing control circuit 160 controls the timing for executing the stored charge amount reset function and the timing for executing the readout pixel circuit selection function by the row scanning circuit 150, and is selected by the selection signal by the readout circuit 130. The timing at which the amount of charge accumulated in the charge accumulation node 25 of the pixel circuit 21 is read is controlled, the timing at which the voltage conversion circuit 110 brings the photoelectric conversion element 110 into an exposure state, and the photoelectric conversion element 110 at a light shielding state. Control the timing.
  • the control unit 20 has the following imaging control function.
  • the imaging control function is a function that causes the image sensor 10 to capture an image and output an output image. More specifically, an imaging start signal is output to the image sensor 10 at a timing at which imaging is started, and an imaging end signal is output at a timing when a predetermined exposure period T1 has elapsed since the imaging start signal is output. This is a function for causing the image sensor 10 to capture the image.
  • FIG. 5A is a timing diagram of an imaging start signal and an imaging end signal output by the control unit 20.
  • control unit 20 delays the imaging start signal and the imaging end signal with respect to the image sensor 10 by the exposure period T1 when the imaging end signal is output rather than when the imaging start signal is output. To output.
  • the timing control circuit 160 (1) controls the operation timing of the voltage application circuit 170 and performs photoelectric conversion at the timing of receiving the imaging start signal.
  • the voltage applied to the member 111 is set to the first voltage within the first predetermined range, and (2) the charge amount stored in the row scanning circuit 150 at the timing of receiving the imaging start signal by controlling the operation timing of the row scanning circuit 150. Execute the reset function.
  • the timing control circuit 160 (1) controls the operation timing of the voltage application circuit 170 and receives the imaging start signal.
  • the voltage applied to the photoelectric conversion member 111 is a second voltage within the second range, and (2) the timing for receiving the imaging end signal by controlling the operation timing of the row scanning circuit 150 and the operation timing of the readout circuit 130.
  • FIG. 5B is a timing chart showing the state of the image sensor 10.
  • the imaging device 10 when the imaging device 10 receives the imaging start signal output from the control unit 20, the imaging device 10 calculates the charge amount accumulated in the pixel circuit 21 included in the pixel circuit array 120 at the received timing. Reset (initialize). Further, the imaging element 10 puts the photoelectric conversion element 110 into an exposure state for a period from receiving an imaging start signal to receiving an imaging end signal, and blocking the photoelectric conversion element 110 for a period after receiving the imaging end signal. And When the imaging element 10 receives the imaging end signal, the amount of charge accumulated in the pixel circuit 21 included in the pixel circuit array 120 is delayed by ⁇ t in order from the first row to the Nth row. Read.
  • charge accumulation period a period from when the charge amount of the pixel circuit 21 is reset to when the charge amount of the pixel circuit 21 is read. This period is called “charge accumulation period”).
  • the charge accumulation period is T1 + (K ⁇ 1) ⁇ ⁇ t.
  • the charge accumulated in the pixel circuit 21 during the period from when the charge amount is reset to when the charge amount is read out in the pixel circuit 21 located in the Kth row (K is an integer of 1 or more and N or less).
  • K is an integer of 1 or more and N or less
  • the pixel circuit 21 located in the K-th row is compared with the pixel circuit 21 located in the first row in the light-shielded photoelectric conversion element 110, and the exposure generated during the period of (K ⁇ 1) ⁇ ⁇ t.
  • the amount of charge accumulated excessively by the amount of charge due to leakage is read out.
  • the captured image output from the image sensor 10 has a deterioration in image quality due to a time difference between reading start times of each row in the array shape (hereinafter, this deterioration in image quality is referred to as “difference in reading time”). This is an image in which the “uneven brightness” is generated.
  • the reduction unit 40 reduces the influence on the output image due to the charge generated by the photoelectric conversion member 111 in the light-shielded state. More specifically, the reduction unit 40 performs the reduction according to the time difference of the time when the readout by the readout circuit 130 is performed with respect to the pixel circuit 21 in the first row for each row in the pixel circuit array 120. This is done by correcting the pixel value of the output image corresponding to the target row.
  • the reduction unit 40 normalizes the exposure amount during the charge accumulation period in the pixel circuit 21 located in the Kth row of the pixel circuit array 120 by the exposure amount during the charge accumulation period in the pixel circuit 21 located in the first row.
  • the pixel value of the output image output from the image sensor 10 is multiplied for each row by a correction coefficient of 1 or less which becomes smaller as the time difference is larger.
  • this reduction part 40 will reduce the brightness nonuniformity with respect to the output image. to correct.
  • the designer who designs the imaging apparatus 1 has previously performed an experiment in which the image sensor 10 captures an image for calculating the correction coefficient for each row. By analyzing the captured image, an appropriate value can be determined.
  • the imaging device 1 can reduce luminance unevenness due to a difference in readout time.
  • the imaging apparatus 1 it is possible to improve the image quality of an image to be captured as compared with a conventional imaging apparatus that does not reduce luminance unevenness due to a difference in readout time.
  • the image sensor 10 reads out the charge amount accumulated in the pixel circuit 21 in units of rows.
  • the readout of the charge amount is not necessarily limited to an example in which the readout is performed in units of rows as long as it is performed in units of pixel circuit blocks including one or more pixel circuits 21.
  • Embodiment 2 an imaging apparatus according to Embodiment 2 in which some of the functions are changed from imaging apparatus 1 according to Embodiment 1 will be described with reference to the drawings.
  • the imaging apparatus 1 performs a correction by multiplying a pixel value by a correction coefficient for each row on the output image output from the imaging element 10, thereby reading out the output image in the output image. It was an example of the structure which reduces the brightness nonuniformity resulting from the difference of.
  • the imaging device 2 reads out the charge amount accumulated in each pixel circuit sequentially from the first row to the Nth row in the pixel circuit array, and vice versa.
  • the readout is sequentially read out from the Nth row to the first row one by one at the same time, and the output images based on the respective readouts are synthesized, whereby the luminance unevenness caused by the difference in the readout time in the output image.
  • the imaging apparatus according to the second embodiment will be described with reference to the drawings, focusing on the changes from the imaging apparatus 1 according to the first embodiment.
  • FIG. 6 is a block diagram illustrating a configuration of a camera 600 according to the second embodiment.
  • the camera 600 is modified so that the imaging apparatus 1 is changed to the imaging apparatus 2 from the camera 200 according to the first embodiment.
  • the imaging device 10 is changed to the imaging device 610 from the imaging device 1 according to Embodiment 1
  • the control unit 20 is changed to the control unit 620
  • the reduction unit 40 is changed to the reduction unit 640. It has been transformed so that.
  • the image sensor 610 has a part of its function changed from that of the image sensor 10 according to the first embodiment.
  • the image sensor 10 reads and reads out the charge amount accumulated in each pixel circuit 21 sequentially from the first row to the Nth row in the pixel circuit array 120.
  • This is an example of a configuration for outputting an output image composed of pixel values based on the respective charge amounts.
  • the image sensor 610 performs forward reading in which the charge amount accumulated in each pixel circuit 21 is sequentially read from the first row to the Nth row in the pixel array.
  • an output image composed of pixel values based on each of the charge amounts read in the forward direction by simultaneously performing reverse reading in order of reading one row at a time from the Nth row to the first row;
  • This is an example of a configuration in which a reverse output image composed of pixel values based on the charge amounts read in the reverse direction is output.
  • FIG. 7 is a block diagram showing the configuration of the image sensor 610.
  • the image sensor 610 has a reverse direction read circuit 130B and a reverse direction output circuit 140B added to the image sensor 10 according to the first embodiment.
  • the pixel circuit 21 is changed to the pixel circuit 21B, the row scanning circuit 150 is changed to the row scanning circuit 150B, and the timing control circuit 160 is changed to the timing control circuit 160B.
  • the pixel circuit array 120 is changed to the pixel circuit array 120B as the pixel circuit 21 is changed to the pixel circuit 21B.
  • FIG. 8 is a block diagram showing the configuration of the pixel circuit 21B.
  • the pixel circuit 21B has a selection transistor 24B added to the pixel circuit 21 according to the first embodiment.
  • the selection transistor 24B has a gate connected to the selection signal line 52B, a drain connected to the source of the amplification transistor 23, and a source connected to the vertical signal line 32B.
  • the selection transistor 24B is turned on by a selection signal delivered from a row scanning circuit 150B (described later) via a selection signal line 52B, thereby outputting a current flowing through the amplification transistor 23 to the vertical signal line 32B.
  • the amount of current output to the vertical signal line 32B is detected by a column readout circuit 31 included in a backward readout circuit 130B (described later), and turned on by a selection signal.
  • the amount of charge stored in the charge storage node 25 of the pixel circuit 21B including the selected transistor 24B is read out.
  • the row scanning circuit 150B is partially changed in function from the row scanning circuit 150 according to the first embodiment.
  • the row scanning circuit 150B is changed to have the following reverse readout pixel circuit selection function in addition to the accumulated charge amount resetting function and readout pixel circuit selection function of the row scanning circuit 150 according to the first embodiment. Has been.
  • the reverse readout pixel circuit selection function turns on the selection transistor 24B in each pixel circuit 21B belonging to the corresponding row at predetermined time intervals ⁇ t in order from the Nth row to the first row. This is a function of delivering a selection signal for the purpose of selection via the selection signal line 52B connected to each pixel circuit 21B belonging to the corresponding row.
  • the readout of the amount of charge accumulated in the charge accumulation nodes 25 of all the pixel circuits 21B included in the pixel circuit array 120B is performed in units of rows from the Nth row to the first row by the backward readout circuit 130B (described later). Are sequentially executed, and it takes N ⁇ ⁇ t period from the start of reading for the pixel circuit 21 belonging to the Nth row to the completion of reading for the pixel circuit 21B belonging to the first row.
  • the reverse readout circuit 130B has the same configuration as the readout circuit 130. However, in the readout circuit 130, each column readout circuit 31 included is connected to the vertical signal line 32 connected to each pixel circuit 21B belonging to the corresponding column, whereas in the backward readout circuit 130B, Each column readout circuit 31 included is different in that it is connected to a vertical signal line 32B connected to each pixel circuit 21B belonging to the corresponding column.
  • the reverse output circuit 140B has the same configuration as the output circuit 140. However, the output circuit 140 outputs an output image composed of pixel values based on the respective charge amounts read by the readout circuit 130, whereas the backward output circuit 140B reads out by the backward readout circuit 130B. The difference is that a reverse output image composed of pixel values based on the respective charge amounts is output.
  • the timing control circuit 160B is partially changed in function from the timing control circuit 160 according to the first embodiment.
  • the timing control circuit 160B controls the operation timing of the row scanning circuit 150B, the operation timing of the readout circuit 130, the operation timing of the backward readout circuit 130B, and the operation timing of the voltage application circuit 170.
  • the timing control circuit 160 controls the timing for executing the accumulated charge amount reset function, the timing for executing the readout pixel circuit selection function, and the timing for executing the backward readout pixel circuit selection function by the row scanning circuit 150B. Then, the timing at which the readout circuit 130 reads out the amount of charge stored in the charge storage node 25 of the pixel circuit 21 selected by the selection signal is controlled, and the pixel selected by the selection signal by the backward readout circuit 130B.
  • the timing at which the amount of charge accumulated in the charge accumulation node 25 of the circuit 21 is read is controlled, and the timing at which the voltage conversion circuit 110 brings the photoelectric conversion element 110 into an exposure state and the timing at which the photoelectric conversion element 110 is put into a light shielding state. And control.
  • Control unit 620 has a part of its function changed from control unit 20 according to the first embodiment.
  • the control unit 20 according to Embodiment 1 is an example of a configuration having an imaging control function.
  • control unit 620 is an example of a configuration having the imaging control function B.
  • the imaging control function B is a function for causing the imaging device 610 to capture an image and outputting an output image and a reverse direction output image. More specifically, an imaging start signal is output to the image sensor 610 at the timing to start imaging, and an imaging end signal is output at a timing when a predetermined exposure period T1 has elapsed after outputting the imaging start signal. This is a function for causing the image sensor 610 to capture the image.
  • FIG. 9A is a timing diagram of an imaging start signal and an imaging end signal output by the control unit 620.
  • control unit 620 delays the imaging start signal and the imaging end signal with respect to the imaging element 610 by the exposure period T1 when the imaging end signal is output rather than when the imaging start signal is output. To output.
  • the timing control circuit 160B controls (1) the operation timing of the voltage application circuit 170 and performs photoelectric conversion at the timing of receiving the imaging start signal.
  • the voltage applied to the member 111 is set to the first voltage within the first predetermined range, and (2) the amount of charge accumulated in the row scanning circuit 150B at the timing of receiving the imaging start signal by controlling the operation timing of the row scanning circuit 150B. Execute the reset function.
  • the timing control circuit 160B controls (1) the operation timing of the voltage application circuit 170 to receive the imaging start signal.
  • the voltage applied to the photoelectric conversion member 111 is a second voltage within the second range, and (2) the operation timing of the row scanning circuit 150B, the operation timing of the readout circuit 130, and the operation timing of the reverse direction readout circuit 130B.
  • Forward reading which is read at a timing delayed by ⁇ t in units, and
  • FIG. 9B is a timing chart showing the state of the image sensor 610.
  • the imaging element 610 calculates the charge amount accumulated in the pixel circuit 21B included in the pixel circuit array 120B at the received timing. Reset (initialize). In addition, the imaging element 610 puts the photoelectric conversion element 110 into an exposure state for a period from receiving an imaging start signal to receiving an imaging end signal, and blocking the photoelectric conversion element 110 for a period after receiving the imaging end signal. And When the imaging element 610 receives the imaging end signal, the imaging element 610 calculates the charge amount accumulated in the pixel circuit 21B included in the pixel circuit array 120B at a timing delayed by ⁇ t in order from the first row to the Nth row. The forward readout for reading and the backward readout for reading the charge amount accumulated in the pixel circuit 21B included in the pixel circuit array 120B are performed at a timing delayed by ⁇ t in order from the Nth row to the first row.
  • the pixel circuit 21B in the first row that is, the row that is read out first, for the pixel circuit 21B located in the Kth row.
  • the amount of electric charge accumulated in the light-shielded photoelectric conversion element 110 during the period of (K ⁇ 1) ⁇ ⁇ t and the amount of electric charge accumulated due to light-shielding leakage is read.
  • the pixel circuit 21B located in the Kth row is (NK) in the light-shielded photoelectric conversion element 110 as compared with the pixel circuit 21B in the Nth row, that is, the row read first.
  • the amount of electric charge accumulated in excess of the amount of electric charge generated during the period of ⁇ t due to light leakage is read out.
  • both the output image and the reverse direction output image output from the image sensor 610 are images with uneven brightness due to the difference in readout time.
  • FIG. 10 shows the period of extra light shielding leakage in each row when the first read line is used as a reference in forward reading, and each row when the first read line is used as a reference in reverse reading. It is a figure which shows the relationship with the period of the excess light-shielding leak.
  • the function of the reducing unit 640 is changed from that of the reducing unit 40 according to the first embodiment.
  • the reduction unit 640 reduces the influence on the output image due to the charge generated by the photoelectric conversion member 111 in the light-shielded state. More specifically, the reduction unit 640 performs the reduction by combining the output image with the reverse direction output image.
  • the reduction unit 640 performs an average of the pixel values of the output image with the pixel values of the corresponding backward output image, and calls the new output image (hereinafter referred to as “luminance unevenness reduced image”). ) Is generated.
  • the luminance unevenness reduced image is an image in which the luminance unevenness due to the difference in readout time is reduced as compared with the output image.
  • the reduction unit 640 reduces the luminance unevenness with respect to the output image. Output a reduced image.
  • the imaging device 2 can reduce luminance unevenness due to a difference in readout time.
  • the imaging device 2 it is possible to improve the image quality of an image to be captured as compared with a conventional imaging device that does not reduce luminance unevenness due to a difference in readout time.
  • the image sensor 610 reads out the charge amount accumulated in the pixel circuit 21B in units of rows.
  • the readout of the charge amount is not necessarily limited to an example in which it is performed in units of rows as long as it is performed in units of pixel circuit blocks including one or more pixel circuits 21B.
  • Embodiment 3 an imaging apparatus according to Embodiment 3 in which some of the functions are changed from imaging apparatus 1 according to Embodiment 1 will be described with reference to the drawings.
  • the imaging apparatus 1 performs an arithmetic process on the output image after the output image is output from the imaging element 10, so that the luminance resulting from the difference in the readout time in the output image
  • the imaging device uses the imaging device to calculate the amount of light collected on the imaging device during the period in which the charge amount accumulated in each pixel circuit is being read.
  • This is an example of a configuration that reduces the occurrence of uneven brightness due to a difference in readout time in a captured image to be output from now on by narrowing down the aperture to be adjusted.
  • FIG. 11 is a block diagram showing a configuration of a camera 1100 according to the third embodiment.
  • the camera 1100 is modified from the camera 200 according to Embodiment 1 so that the imaging device 1 is changed to the imaging device 3.
  • the control unit 20 is changed to the control unit 1120 and the reduction unit 40 is changed to the reduction unit 1140 with respect to the imaging device 1 according to the first embodiment.
  • control unit 1120 and the reduction unit 1140 will be described in order.
  • the control unit 1120 is partially changed from the control unit 20 according to the first embodiment.
  • the control unit 20 according to Embodiment 1 is an example of a configuration having an imaging control function.
  • control unit 1120 is an example of a configuration having the imaging control function C.
  • the imaging control function C refers to a user who uses the imaging device 3 to set the aperture amount of the aperture 214 during the period in which the photoelectric conversion member 111 is in an exposure state while causing the image sensor 10 to capture an image and output an output image. This is a function to obtain a desired aperture amount. More specifically, (1) the imaging start signal is output to the image sensor 10 at the timing of starting imaging, and the imaging is completed when a predetermined exposure period T1 has elapsed since the imaging start signal is output. By outputting a signal, the image sensor 10 performs imaging of the image, and (2) an aperture amount indicating an aperture amount desired by the user at a timing of outputting an imaging start signal to the lens driving unit 220. This is a function that causes the aperture amount of the aperture 214 to be set to the aperture amount desired by the user by outputting a designation signal.
  • the function of the reducing unit 1140 is changed from that of the reducing unit 40 according to the first embodiment.
  • the reduction unit 1140 sets the aperture amount of the aperture 214 as the maximum aperture amount. More specifically, when an imaging end signal is output from the control unit 1120, a maximum aperture amount signal indicating that the aperture amount is the maximum aperture amount is output to the lens driving unit 220, whereby the aperture 214 is output. Is set to the maximum aperture amount.
  • FIG. 12A is a timing diagram of an imaging start signal and an imaging end signal output by the control unit 620
  • FIG. 12B is a timing diagram of an aperture amount designation signal output by the control unit 620
  • FIG. FIG. 10 is a timing diagram of a maximum aperture amount signal output by a reduction unit 1140.
  • the control unit 620 delays the imaging start signal and the imaging end signal with respect to the image sensor 10 by the exposure period T1 when the imaging end signal is output rather than when the imaging start signal is output. To output. Also, as illustrated in FIG. 12B, the control unit 620 outputs an aperture amount designation signal to the lens driving unit 220 at the timing of outputting the imaging start signal. Then, as illustrated in FIG. 12C, the reduction unit 1140 outputs a maximum aperture amount signal to the lens driving unit 220 when the imaging end signal is output from the control unit 620.
  • FIG. 12D is a timing chart showing the state of the diaphragm 214.
  • the diaphragm 214 indicates the diaphragm amount by the diaphragm amount designation signal during the period from when the lens driving unit 220 receives the diaphragm amount designation signal to when the lens driving unit 220 receives the maximum diaphragm amount signal.
  • the aperture value is set to the maximum aperture value during the period after the maximum aperture signal is received.
  • FIG. 12E is a timing chart showing the state of the image sensor 10.
  • the image sensor 10 receives the imaging start signal and receives the imaging end signal.
  • the photoelectric conversion element 110 is set in an exposure state, and the photoelectric conversion element 110 is set in a light-shielding state for a period after receiving an imaging end signal.
  • the imaging element 10 receives the imaging end signal, the amount of charge accumulated in the pixel circuit 21 included in the pixel circuit array 120 is delayed by ⁇ t in order from the first row to the Nth row. Read.
  • the diaphragm 214 sets the diaphragm amount to the maximum diaphragm amount during the period when the image pickup device 10 is reading the charge amount.
  • the amount of external light collected on the photoelectric conversion member 111 can be minimized while the charge amount is being read. For this reason, in the imaging device 3, during the period when the charge amount is being read, luminance unevenness due to the difference in readout time is reduced compared to a conventional imaging device in which the aperture amount of the aperture is not set to the maximum aperture amount. Images can be output.
  • the imaging device 3 according to the present disclosure can reduce luminance unevenness due to a difference in readout time.
  • the imaging device 3 it is possible to improve the image quality of an image to be captured as compared with a conventional imaging device that does not reduce luminance unevenness due to a difference in readout time.
  • the reduction unit 1140 sets the aperture amount of the aperture 214 as the maximum aperture amount when the imaging end signal is output from the control unit 1120.
  • the aperture amount is not limited to the maximum aperture amount as long as the aperture amount is larger than the aperture amount indicated by the aperture amount designation signal.
  • Embodiment 4 an imaging apparatus according to Embodiment 4 in which some of the functions are changed from imaging apparatus 3 according to Embodiment 3 will be described with reference to the drawings.
  • the imaging apparatus performs apodization imaging that exhibits an apodization effect by increasing the aperture amount of the aperture during the exposure period.
  • the imaging device increases the photoelectric conversion efficiency of the photoelectric conversion member in the period when the aperture amount is increased in the apodization imaging so that the decrease in the light amount due to the increase in the aperture amount is compensated. Increase it.
  • FIG. 13 is a block diagram showing a configuration of a camera 1300 according to the fourth embodiment.
  • the camera 1300 is modified from the camera 1100 according to Embodiment 3 so that the imaging device 3 is changed to the imaging device 4.
  • the reduction unit 1140 is deleted from the imaging device 3 according to Embodiment 3
  • a voltage control unit 1340 is added, the imaging device 10 is changed to the imaging device 1310, and the control unit 1120 is a control unit. It has been changed to 1320.
  • the image sensor 1310 has a part of its function changed from that of the image sensor 10 according to the third embodiment.
  • FIG. 14 is a block diagram showing a configuration of the image sensor 1310.
  • the timing control circuit 160 is changed to a timing control circuit 160C with respect to the image sensor 10 according to the third embodiment.
  • the timing control circuit 160C is partly changed from the timing control circuit 160 according to the third embodiment.
  • the timing control circuit 160C has the following arbitrary voltage application function in addition to the function of the timing control circuit 160 according to the third embodiment.
  • the arbitrary voltage application function is a function of controlling the voltage application circuit 170 and causing the voltage application circuit 170 to dynamically apply an arbitrary voltage within the first predetermined range to the photoelectric conversion member 111.
  • the control unit 1320 has a part of its function changed from the control unit 1120 according to the third embodiment.
  • the control unit 1120 according to the third embodiment is an example of a configuration having the imaging control function C.
  • control unit 1320 is an example of a configuration having an apodization imaging control function.
  • the apodization imaging control function allows the imaging device 1310 to capture an image and output an output image, and at the same time, the aperture desired by the user using the imaging device 3 during the period in which the photoelectric conversion member 111 is in an exposure state. From the aperture amount of 214, a predetermined amount of light of the external light condensed on the photoelectric conversion member 111 is increased to a predetermined ratio A (A is a number less than 1 greater than 0, for example, 1/2). This is a function of increasing the aperture amount of the aperture 214 so as to decrease linearly over the exposure period T1.
  • the imaging start signal is output to the image sensor 1310 at the timing of starting imaging, and the imaging ends at the timing when a predetermined exposure period T1 has elapsed since the imaging start signal was output.
  • the image sensor 10 performs imaging of the image, and (2) an aperture amount indicating an aperture amount desired by the user at a timing of outputting an imaging start signal to the lens driving unit 220. This is a function for causing the aperture 214 to increase the aperture amount by outputting the designation signal B.
  • the voltage control unit 1340 controls the voltage applied to the photoelectric conversion member 111.
  • the voltage control unit 1340 changes the voltage applied to the photoelectric conversion member 111 in accordance with the change when the aperture amount of the diaphragm 214 changes.
  • the above control is performed so as to be increased. More specifically, when the aperture amount designation signal B is output from the control unit 1320, the voltage control unit 1340 applies the first voltage to the imaging element 1310 with respect to the photoelectric conversion efficiency in the photoelectric conversion member 111.
  • the above control is performed by outputting.
  • the voltage control unit 1340 is realized by a processor (not shown) executing a program stored in a memory (not shown).
  • FIG. 15A is a timing diagram of an imaging start signal and an imaging end signal output by the control unit 1320
  • FIG. 15B is a timing diagram of an aperture amount designation signal B output by the control unit 1320
  • FIG. FIG. 10 is a timing diagram of an applied voltage change signal output by the voltage controller 1340.
  • the control unit 1320 delays the imaging start signal and the imaging end signal with respect to the imaging element 1310 by the exposure period T1 when the imaging end signal is output rather than when the imaging start signal is output. To output. Also, as shown in FIG. 15B, the control unit 1320 outputs an aperture amount designation signal B to the lens driving unit 220 at the timing of outputting the imaging start signal. Then, as illustrated in FIG. 15C, the voltage control unit 1340 outputs an applied voltage change signal to the image sensor 1310 at the timing when the aperture amount designation signal B is output.
  • the diaphragm 214 collects the diaphragm amount on the photoelectric conversion member 111 from the diaphragm amount indicated by the diaphragm amount designation signal B over a predetermined exposure period T1.
  • the aperture amount is changed so that the amount of the external light to be emitted decreases linearly until the light amount of the external light reaches a predetermined ratio A times.
  • FIG. 15D is a timing diagram of the amount of external light collected on the photoelectric conversion member 111.
  • the amount of external light condensed on the photoelectric conversion member 111 is changed from the start time of the exposure period T1 to the end time of the exposure period T1. From the amount of light at the aperture amount desired by the user, the amount decreases linearly until it reaches the predetermined ratio A times.
  • the timing control circuit 160C controls the operation timing of the voltage application circuit 170, and receives the applied voltage change signal at the timing of receiving the applied voltage change signal.
  • the voltage applied to the conversion member 111 is a first voltage within a first predetermined range. Then, the voltage applied to the photoelectric conversion member 111 is increased within the first predetermined range so that the photoelectric conversion efficiency in the photoelectric conversion member 111 increases linearly to a predetermined ratio 1 / A over the exposure period T1. .
  • FIG. 15E is a timing diagram of a voltage applied to the photoelectric conversion member 111
  • FIG. 15F is a timing diagram of photoelectric conversion efficiency in the photoelectric conversion member 111.
  • the photoelectric conversion efficiency in the photoelectric conversion member 111 is from the start time of the exposure period T1 to the end time of the exposure period. From the photoelectric conversion efficiency to which the first voltage is applied, it linearly increases until the predetermined ratio becomes 1 / A times.
  • the light amount during the exposure period is A times (here, the light amount at the aperture amount desired by the user). For example, the light amount is reduced to 1/2).
  • the photoelectric conversion efficiency in the photoelectric conversion member 111 is determined from the photoelectric conversion efficiency to which the first voltage is applied. It increases linearly until it reaches a predetermined ratio 1 / A.
  • the imaging apparatus 4 can compensate for the decrease in the light amount in the apodization imaging by the increase in the photoelectric conversion efficiency in the photoelectric conversion member 111.
  • the imaging device 4 reduces deterioration of the image quality of the captured image due to insufficient light quantity in the apodization imaging as compared with the conventional imaging device that does not increase the photoelectric efficiency of the photoelectric conversion member in the apodization imaging. Can do.
  • the imaging device 4 can reduce deterioration of a captured image due to a lack of light amount in apodization imaging.
  • the imaging device 4 it is possible to improve the image quality of an image to be captured, as compared with a conventional imaging device that does not reduce deterioration of a captured image due to insufficient light amount in apodization imaging.
  • Embodiment 5 an imaging apparatus according to Embodiment 5 in which some of the functions are changed from imaging apparatus 1 according to Embodiment 1 will be described with reference to the drawings.
  • the imaging apparatus according to the fifth embodiment sequentially reads out the charge amount accumulated in the pixel circuit in units of rows in the pixel circuit array, as in the imaging apparatus 1 according to the first embodiment.
  • the imaging apparatus according to Embodiment 5 adjusts the luminance difference in the output image in units of rows by positively exposing the photoelectric conversion member to the exposure state during the readout period.
  • the imaging apparatus according to the fifth embodiment will be described with reference to the drawings, focusing on the changes from the imaging apparatus 1 according to the first embodiment.
  • FIG. 16 is a block diagram showing a configuration of a camera 1600 according to the fifth embodiment.
  • the camera 1600 is modified so that the imaging device 1 is changed to the imaging device 5 from the camera 200 according to the first embodiment. Then, in the imaging apparatus 5, the reduction unit 40 is deleted from the imaging apparatus 1 according to Embodiment 1, the imaging element 10 is changed to the imaging element 1310, the control unit 20 is changed to the control unit 1620, and the voltage control unit. 1640 and an acquisition unit 1650 are added.
  • the image sensor 1310 has already been described in the fourth embodiment. For this reason, here, the details of the control unit 1620, the acquisition unit 1650, and the voltage control unit 1640 will be described in order.
  • Control unit 1620 has a part of its function changed from control unit 20 according to the first embodiment.
  • the control unit 1620 has the following live view imaging function in addition to the imaging control function of the control unit 20 according to the first embodiment.
  • the live view imaging function is a function that causes the imaging device 10 to capture an image and output an output image at a predetermined cycle (for example, 1 second). More specifically, the control unit 1620 realizes this live view imaging function by executing the imaging control function at a predetermined cycle.
  • the acquisition unit 1650 has an estimated charge amount indicating the amount of charge estimated to be accumulated in each of the plurality of pixel circuits 21 when the read circuit 130 starts reading. Information on the first distribution is acquired.
  • the acquisition unit 1650 outputs, as the information, an output image (hereinafter referred to as “live view image”) output from the imaging element 1310 during the period in which the control unit 1620 executes the live view imaging function.
  • live view image an output image
  • the acquisition unit 1650 is realized by a processor (not shown) executing a program stored in a memory (not shown).
  • the voltage control unit 1640 controls the voltage applied to the photoelectric conversion member 111.
  • the voltage control unit 1640 provides the first predetermined range to the photoelectric conversion member 111 during at least a part of the period from the start point to the end point of reading by the reading circuit 130 (hereinafter referred to as “additional exposure period”).
  • the voltage applied to the photoelectric conversion member 111 is controlled so that the above voltage is applied.
  • the voltage control unit 1640 uses the pixel of the charge amount read by the readout circuit 130 rather than the luminance distribution (first distribution) in the live view image.
  • the voltage applied to the photoelectric conversion member 111 is controlled so that the distribution in the array shape of the circuit array 120 becomes a flatter distribution.
  • the voltage control unit 1640 (1) Among the live view images acquired by the acquisition unit 1650, the last acquired live view image (hereinafter referred to as “reference live view image”). The sum of the pixel values for each row is calculated, and (2) the voltage applied to the photoelectric conversion member 111 is controlled so that the variation in the sum of the pixel values for each row is reduced.
  • the voltage control unit 1640 is realized by a processor (not shown) executing a program stored in a memory (not shown).
  • FIG. 17 is a specific example of the reference live view image.
  • the reference live view image is an image in which the sun is reflected above the image and the shade is reflected below the image.
  • the voltage control unit 1640 calculates the sum of the pixel values for each row in the live view image.
  • the sum of the pixel values of the upper l rows where the sun is reflected is significantly larger than the average of the sum of the pixel values for each row (that is, the luminance is high), and the lower portion where the shade is reflected
  • the sum of the pixel values of the m-row portion is significantly smaller than the average of the sum of the pixel values for each row (that is, the luminance is low).
  • the voltage control unit 1640 has a luminance distribution so that the luminance distribution in the new image becomes a flatter distribution.
  • the voltage applied to the photoelectric conversion member 111 is controlled so that the additional exposure period is included in the period until the readout only for the pixel circuits 21 located in the lower m rows.
  • FIG. 18A is a timing chart showing the state of the image sensor 1310 when the image sensor 1310 captures a new image in this specific example.
  • FIG. 18B is a timing diagram showing that the image sensor 1310 is new in this specific example.
  • FIG. 11 is a timing diagram of voltages applied to the photoelectric conversion member 111 when a simple image is captured.
  • the voltage control unit 1640 supplies the photoelectric conversion member 111 with the first period from the time when reading of the lowermost (m ⁇ 1) th row is completed until the reading of the lowest row is completed. 1
  • the voltage applied to the photoelectric conversion member 111 is controlled so that the third voltage in a predetermined range is applied.
  • the voltage control unit 1640 controls the voltage applied to the photoelectric conversion member 111 by outputting an applied voltage value signal indicating the value of the voltage to be applied to the photoelectric conversion member 111 to the imaging element 1310. .
  • FIG. 19A is a timing diagram of an imaging start signal and an imaging end signal output by the control unit 1620
  • FIG. 19B is a timing diagram of an applied voltage value signal output by the voltage control unit 1640.
  • control unit 1620 delays the imaging start signal and the imaging end signal with respect to the imaging element 1310 by the exposure period T1 when the imaging end signal is output rather than when the imaging start signal is output. To output.
  • the voltage control unit 1640 uses the distribution of the charge amount read by the readout circuit 130 in the array shape of the pixel circuit array 120 rather than the luminance distribution in the reference live view image.
  • the voltage control unit 1640 generates an applied voltage value signal indicating the calculated third voltage from the calculated start time of the additional exposure period T2 to the end time of the calculated additional exposure period T2. Output.
  • FIG. 19C is a timing chart showing the state of the image sensor 1310
  • FIG. 19D is a timing chart of a voltage applied to the photoelectric conversion member 111.
  • the imaging device 1310 when the imaging device 1310 receives the imaging start signal output from the control unit 1620, it is accumulated in the pixel circuit 21 included in the pixel circuit array 120 at the received timing. Reset (initialize) the charge amount.
  • the imaging element 1310 applies the first voltage to the photoelectric conversion member 111 during the period from the reception of the imaging start signal to the reception of the imaging end signal, thereby bringing the photoelectric conversion element 110 into an exposure state.
  • the imaging element 1310 receives the imaging end signal, the charge amount accumulated in the pixel circuit 21 included in the pixel circuit array 120 is delayed by ⁇ t in order from the first row to the Nth row in units of rows. Read.
  • the image sensor 1310 when the image sensor 1310 receives the applied voltage value signal, the image sensor 1310 applies the third voltage indicated by the applied voltage signal to the photoelectric conversion member 111 during the period during which the applied voltage value signal is received.
  • the conversion member 111 is set to the exposure state.
  • the imaging device 5 sequentially reads out the charge amount accumulated in the pixel circuit 21 in units of rows in the pixel circuit array 120, while the luminance distribution in the output image is distributed during the readout period. Then, the photoelectric conversion member 111 is positively exposed so as to obtain a flatter distribution.
  • the imaging device 5 can adjust the luminance difference in units of rows so that the luminance difference in the output image is reduced.
  • the third voltage is described as being lower than the first voltage.
  • the third voltage is not necessarily lower than the first voltage as long as the voltage is within the first predetermined range. Not limited to cases.
  • the third voltage may be higher than the first voltage or the same. Further, for example, the third voltage may dynamically vary within the first predetermined range.
  • the additional exposure period T2 is located in the latter half of the readout period. However, if the additional exposure period T2 is within the readout period, the additional exposure period T2 is not necessarily located in the latter half of the readout period. Not limited to. For example, the additional exposure period T2 may be located in the first half of the readout period or may be located in the entire readout period. Furthermore, for example, the additional exposure period T2 may be divided into a plurality of periods that are not continuous with each other.
  • the imaging device 5 can adjust the luminance difference in units of rows so that the luminance difference in the output image is reduced.
  • the image quality of an image to be captured is higher than that of a conventional imaging device in which the luminance difference cannot be adjusted in units of rows so that the luminance difference in the output image is reduced. Can be improved.
  • the image sensor 1310 reads out the charge amount accumulated in the pixel circuit 21 in units of rows.
  • the readout of the charge amount is not necessarily limited to an example in which the readout is performed in units of rows as long as it is performed in units of pixel circuit blocks including one or more pixel circuits 21.
  • the imaging device 1 generates charges due to the internal photoelectric effect by the photoelectric conversion member 111 receiving light in a state where a voltage in the first predetermined range is applied, and in the second predetermined range. It has been described that the organic thin film has a function that does not generate charges due to the internal photoelectric effect even if light is received in a state where a voltage is applied.
  • the photoelectric conversion member 111 is not necessarily limited to the organic thin film as long as the presence or absence of charge generation due to the internal photoelectric effect can be controlled by the applied voltage.
  • the imaging device 1 may be an example in which the photoelectric conversion member 111 is a diode having a PN junction surface.
  • the predetermined exposure period T1 is a predetermined period.
  • the exposure period T1 is not a predetermined period, but may be set by a user who uses the imaging apparatus 1, for example.
  • the predetermined ratio A has been described as being a predetermined ratio.
  • the ratio A is not a predetermined ratio, but may be set by a user who uses the imaging device 4, for example.
  • the predetermined ratio A has been described on the assumption that A is a number less than one.
  • the present invention is not necessarily limited to the case where A is a number less than 1, and an example in which A is a number greater than 1 is also conceivable.
  • the amount of the external light collected on the photoelectric conversion member 111 is increased by increasing the aperture amount of the aperture 214 so that the light amount of the external light linearly increases up to A times over the exposure time T1, and the photoelectric conversion member The voltage applied to the photoelectric conversion member 111 is reduced within the first predetermined range so that the photoelectric conversion efficiency in 111 decreases linearly to 1 / A times over the exposure period T1.
  • the present disclosure includes electronic devices in which the imaging devices 1 to 5 according to the first to fifth embodiments are incorporated.
  • Such an electronic device is realized, for example, as a digital still camera shown in FIG. 20A or a video camera shown in FIG. 20B.
  • the imaging apparatus 1 has been described as having a configuration separate from the optical system 210.
  • the imaging device 1 is not necessarily limited to a configuration that is separate from the optical system 210.
  • the imaging device 1 may be a camera with a lens including the optical system 210 and the lens driving unit 220.
  • Each component (functional block) in the imaging devices 1 to 5 may be individually made into one chip by a semiconductor device such as an IC (Integrated Circuit), an LSI (Large Scale Integration), or a part thereof. Alternatively, it may be made into one chip so as to include the whole. Further, the method of circuit integration is not limited to LSI's, and implementation using dedicated circuitry or general purpose processors is also possible. An FPGA (Field Programmable Gate Array) that can be programmed after manufacturing the LSI or a reconfigurable processor that can reconfigure the connection and setting of circuit cells inside the LSI may be used. Furthermore, if integrated circuit technology that replaces LSI appears as a result of progress in semiconductor technology or other derived technology, functional blocks may be integrated using this technology. Biotechnology can be applied as a possibility.
  • IC Integrated Circuit
  • LSI Large Scale Integration
  • all or part of the various processes described above may be realized by hardware such as an electronic circuit or may be realized by using software.
  • the processing by software is realized by a processor included in the imaging apparatus 1 executing a program stored in the memory.
  • the program may be recorded on a recording medium and distributed or distributed. For example, by installing the distributed program in a device having another processor and causing the processor to execute the program, it is possible to cause the device to perform each of the above processes.
  • the imaging device 1 includes a photoelectric conversion member 111 that generates charges due to an internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied, and the photoelectric conversion member 111.
  • a plurality of pixel circuits 21 that accumulate the charges generated by each pixel, a readout circuit 130 that reads out the amount of charges accumulated in each of the plurality of pixel circuits 21, and the amount of charges read out by the readout circuit 130
  • the output image by the electric charge generated by the image sensor 10 including the output circuit 140 that outputs an output image composed of pixel values based on each of them and the light-shielded photoelectric conversion member 111 to which a voltage in the second predetermined range is applied.
  • the reduction part 40 which reduces the influence on is provided.
  • This imaging device 1 reduces the influence on the output image due to the charge generated by the light-shielded photoelectric conversion member 111. For this reason, according to this imaging device 1, the image quality in the image imaged can be improved with respect to the image quality in the image imaged by the conventional imaging device.
  • the readout circuit 130 performs the readout from the first pixel circuit block to the Nth (N) th pixel unit in units of one or more pixel circuits 21 during the period in which the photoelectric conversion member 111 is in the light shielding state.
  • the reduction unit 40 performs the reduction for each pixel circuit block with respect to the pixel circuit 21 of the first pixel circuit block.
  • the pixel value of the output image corresponding to the target pixel circuit block may be corrected in accordance with the time difference between the times when the reading is performed.
  • the imaging apparatus 1 can reduce image quality degradation due to the time difference between the pixel circuit blocks at the time of reading.
  • the reduction unit 40 makes the correction smaller as the time difference is larger with respect to the pixel value of the output image corresponding to the target pixel circuit block for each pixel circuit block. This may be performed by multiplying a correction coefficient of 1 or less.
  • the imaging apparatus 1 can realize a reduction in image quality degradation due to a time difference between the times at which readout is performed in each pixel circuit block by a relatively simple calculation.
  • the readout circuit 130 performs the readout from the first pixel circuit block to the Nth (N) th pixel unit in units of one or more pixel circuits 21 during the period in which the photoelectric conversion member 111 is in the light shielding state. Is an integer greater than or equal to 2) in order to the pixel circuit block, and further, in the period in which the photoelectric conversion member 111 is in the light shielding state, the first pixel from the Nth pixel circuit block in units of the pixel circuit block.
  • a backward reading circuit 130B for reading out the charge amount accumulated in each of the plurality of pixel circuits 21 in order to the circuit block, and a backward direction composed of pixel values based on the respective charge amounts read by the backward reading circuit 130B.
  • a reverse output circuit 140B that outputs an output image, and the reduction unit 40 applies the reduction to the output image. It may perform by combining backward output image.
  • the imaging apparatus 1 can reduce image quality degradation due to the time difference between the pixel circuit blocks at the time of reading.
  • the reduction unit 40 performs processing including a process of adding the pixel value of the backward output image at the position corresponding to the pixel value to each pixel value of the output image. You may do it.
  • the imaging apparatus 1 can realize a reduction in image quality degradation due to a time difference between the times at which readout is performed in each pixel circuit block by a relatively simple calculation.
  • it further includes a lens that collects external light on the photoelectric conversion member 111 and a diaphragm 214 that adjusts the amount of light collected by the lens. It may be performed by reducing the diaphragm 214 during at least a part of the period in which the conversion member 111 is in the light shielding state.
  • the imaging apparatus 1 can reduce deterioration in image quality due to light condensed on the light-shielding photoelectric conversion member 111.
  • the reading by the reading circuit 130 is first completed after the time when the state of the photoelectric conversion member 111 is changed from the exposure state to the light shielding state.
  • a period up to the point of time may be included.
  • the imaging apparatus 1 can reduce deterioration of image quality due to light condensed on the photoelectric conversion member 111 in a light-shielded state during the period.
  • An imaging apparatus 1 is a photoelectric conversion member 111 that generates charges due to an internal photoelectric effect by receiving light in an exposure state in which a voltage in a first predetermined range is applied.
  • a photoelectric conversion member 111 that generates the electric charge so that the higher the voltage is, the higher the photoelectric conversion efficiency is according to a predetermined range of voltage, and the electric charge generated by the photoelectric conversion member 111 is accumulated in units of pixels.
  • the imaging device 10 including the output circuit 140 for outputting, and the voltage control unit 1340 for controlling the voltage applied to the photoelectric conversion member 111 are provided.
  • This imaging apparatus 1 can control the photoelectric conversion efficiency in the photoelectric conversion member 111. For this reason, according to this imaging device 1, the image quality in the image imaged can be improved with respect to the image quality in the image imaged by the conventional imaging device.
  • it further includes a lens that collects external light on the photoelectric conversion member 111, and a diaphragm 214 that adjusts the amount of light collected by the lens, and the voltage control unit 1340 performs the control,
  • the voltage control unit 1340 performs the control
  • the imaging apparatus 1 can reduce image quality degradation caused by a change in the aperture amount during imaging.
  • the voltage control unit 1340 changes the control so that the aperture amount of the aperture 214 increases in the case where the photoelectric conversion member 111 is in the exposure state, the photoelectric conversion member according to the change.
  • the voltage applied to 111 may be increased.
  • the imaging apparatus 1 can reduce image quality degradation caused by an increase in the amount of aperture during imaging.
  • the readout circuit 130 performs the readout in order from the first pixel circuit block to the Nth (N is an integer of 2 or more) pixel circuit block in units of pixel circuit blocks including one or more pixel circuits 21.
  • the voltage control unit 1340 performs the control so that the voltage within the first predetermined range is applied to the photoelectric conversion member 111 during at least a part of the period from the start point to the end point of the reading by the reading circuit 130. It may be done.
  • the imaging apparatus 1 can realize the adjustment of the exposure period for each pixel circuit block.
  • the estimated charge amount indicating the amount of charge estimated to be accumulated in each of the plurality of pixel circuits 21 at the time when the reading circuit 130 starts the reading is provided, and the voltage control unit 1340 reads the control based on the information acquired by the acquisition unit 1650 by the reading circuit 130 rather than the first distribution.
  • the distribution of the charge amount in the plurality of pixel circuits 21 may be performed so as to have a flatter distribution.
  • the imaging apparatus 1 can flatten the luminance distribution in the output image.
  • the image sensor 10 may be an organic CMOS image sensor using an organic thin film as a photoelectric conversion member 111.
  • the camera includes the imaging device 1 and a lens that collects external light on the imaging element 10.
  • This camera reduces the influence on the output image due to the charge generated by the photoelectric conversion member 111 in a light-shielded state, or controls the photoelectric conversion efficiency in the photoelectric conversion member 111. For this reason, according to this camera, the image quality in the image to be captured can be improved with respect to the image quality in the image captured by the conventional camera.
  • the image sensor 10 may be an organic CMOS image sensor using an organic thin film as the photoelectric conversion member.
  • An imaging method is an imaging method performed by the imaging apparatus 1 including the imaging element 10 and the reduction unit 40, and the imaging element 10 is in an exposure state where a voltage in a first predetermined range is applied.
  • the photoelectric conversion member 111 that generates charges due to the internal photoelectric effect by receiving light
  • the plurality of pixel circuits 21 that store the charges generated by the photoelectric conversion member 111 in units of pixels, and the plurality of pixel circuits 21 are stored.
  • a readout circuit 130 that reads out the amount of charge that has been read out, and an output circuit 140 that outputs an output image consisting of pixel values based on each of the amount of charge read out by the readout circuit 130.
  • the output circuit 140 outputs the output image.
  • Output step, and the reduction unit 40 depends on the charge generated by the light-shielded photoelectric conversion member 111 to which a voltage in the second predetermined range is applied. And a reduction step of reducing the influence on the output image.
  • This imaging method reduces the influence on the output image due to the charge generated by the light-shielded photoelectric conversion member 111. For this reason, according to this imaging method, the image quality in the image to be captured can be improved with respect to the image quality in the image captured by the conventional imaging method.
  • An imaging method is an imaging method performed by the imaging device 1 including the imaging device 10 and the voltage control unit 1340, and the imaging device 10 is in an exposure state to which a voltage in a first predetermined range is applied.
  • the photoelectric conversion member 111 that generates charges due to the internal photoelectric effect by receiving light at, the higher the voltage, the higher the photoelectric conversion efficiency according to the applied voltage in the first predetermined range.
  • a readout circuit 130 and an output circuit 140 that outputs an output image composed of pixel values based on each of the charge amounts read by the readout circuit 130, and includes a voltage Control unit 1340, a voltage control step of controlling the voltage applied to the photoelectric conversion member 111, the output circuit 140, and an output step of outputting the output image.
  • This imaging method can control the photoelectric conversion efficiency in the photoelectric conversion member 111. For this reason, according to this imaging method, the image quality in the image to be captured can be improved with respect to the image quality in the image captured by the conventional imaging method.
  • the present disclosure can be widely used for imaging devices that capture images.
  • Imaging device 10 1, 2, 3, 4, 5 Imaging device 10, 610, 1310 Imaging element 20, 620, 1120, 1320, 1620 Control unit 21 Pixel circuit 40, 640, 1140 Reduction unit 110 Photoelectric conversion element 111 Photoelectric conversion member 112 Upper transparent Electrode 113 Lower pixel electrode 120 Pixel circuit array 130 Read circuit 130B Reverse direction read circuit 140 Output circuit 140B Reverse direction output circuit 150 Row scanning circuit (initialization circuit) 160, 160B, 160C Timing control circuit 170 Voltage application circuit 200, 600, 1100, 1300, 1600 Camera 211 Zoom lens 212 Camera shake correction lens 213 Focus lens 214 Aperture 1340, 1640 Voltage control unit 1650 Acquisition unit

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention concerne un dispositif de capture d'image (1) qui comprend : un élément de capture d'image (10) qui comprend un élément de conversion photoélectrique (111) qui génère des charges en raison d'un effet photoélectrique interne en recevant de la lumière dans un état d'exposition dans lequel une tension dans une première plage prédéfinie est appliquée, une pluralité de circuits de pixels (21) pour accumuler les charges générées par l'élément de conversion photoélectrique (111) de façon unitaire par pixel, un circuit de lecture (130) pour lire une quantité de charge accumulée dans chacun parmi la pluralité de circuits de pixel (21), et un circuit de sortie (140) qui produit une image de sortie composée de valeurs de pixel sur la base de chacune des quantités de charge lues par le circuit de lecture (130) ; et une unité de réduction (40) pour réduire l'influence sur l'image de sortie des charges générées par l'élément de conversion photoélectrique (111) dans un état protégé contre la lumière dans lequel une tension dans une seconde plage prédéfinie est appliquée.
PCT/JP2017/046590 2016-12-27 2017-12-26 Dispositif de capture d'image, appareil de capture d'image et procédé de capture d'image Ceased WO2018124046A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013243781A (ja) * 2013-08-27 2013-12-05 Sony Corp 撮像素子およびその制御方法並びにカメラ
WO2014103169A1 (fr) * 2012-12-27 2014-07-03 パナソニック株式会社 Dispositif d'imagerie et procédé d'entraînement associé
JP2016039392A (ja) * 2014-08-05 2016-03-22 ソニー株式会社 撮像装置及び画素信号読み出し方法
JP2016058771A (ja) * 2014-09-05 2016-04-21 リコーイメージング株式会社 撮像装置および撮像方法
JP2016134654A (ja) * 2015-01-15 2016-07-25 キヤノン株式会社 撮像装置及びその制御方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014103169A1 (fr) * 2012-12-27 2014-07-03 パナソニック株式会社 Dispositif d'imagerie et procédé d'entraînement associé
JP2013243781A (ja) * 2013-08-27 2013-12-05 Sony Corp 撮像素子およびその制御方法並びにカメラ
JP2016039392A (ja) * 2014-08-05 2016-03-22 ソニー株式会社 撮像装置及び画素信号読み出し方法
JP2016058771A (ja) * 2014-09-05 2016-04-21 リコーイメージング株式会社 撮像装置および撮像方法
JP2016134654A (ja) * 2015-01-15 2016-07-25 キヤノン株式会社 撮像装置及びその制御方法

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