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WO2018116780A1 - Composition de prétraitement de substrat de réserve et procédé de fabrication de substrat de réserve - Google Patents

Composition de prétraitement de substrat de réserve et procédé de fabrication de substrat de réserve Download PDF

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Publication number
WO2018116780A1
WO2018116780A1 PCT/JP2017/043038 JP2017043038W WO2018116780A1 WO 2018116780 A1 WO2018116780 A1 WO 2018116780A1 JP 2017043038 W JP2017043038 W JP 2017043038W WO 2018116780 A1 WO2018116780 A1 WO 2018116780A1
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WIPO (PCT)
Prior art keywords
group
resist
pretreatment composition
resist substrate
amphoteric surfactant
Prior art date
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PCT/JP2017/043038
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English (en)
Japanese (ja)
Inventor
拓馬 竹田
祥平 佐藤
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Sanyo Chemical Industries Ltd
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Sanyo Chemical Industries Ltd
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Filing date
Publication date
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Priority to CN201780070786.6A priority Critical patent/CN109964546B/zh
Priority to KR1020197013964A priority patent/KR102120022B1/ko
Priority to JP2018557639A priority patent/JP6653771B2/ja
Publication of WO2018116780A1 publication Critical patent/WO2018116780A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions
    • H05K3/287—Photosensitive compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/29—Sulfates of polyoxyalkylene ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/52—Carboxylic amides, alkylolamides or imides or their condensation products with alkylene oxides
    • C11D1/521—Carboxylic amides (R1-CO-NR2R3), where R1, R2 and R3 are alkyl or alkenyl groups
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/88—Ampholytes; Electroneutral compounds
    • C11D1/94—Mixtures with anionic, cationic or non-ionic compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist

Definitions

  • the present invention relates to a resist substrate pretreatment composition and a method for producing a resist substrate. Specifically, the present invention relates to a resist substrate pretreatment composition used before forming a pattern on the surface of copper or a copper alloy using a solder resist, and a method for producing a resist substrate using the resist substrate pretreatment composition.
  • JP-A-7-263845 Japanese Patent Laid-Open No. 9-18115 JP 2007-227715 A JP 2012-64640 A Japanese Patent No. 4850282
  • the purpose of the present invention is to perform pretreatment on the substrate before resist ink coating, so that wetting and spreading after applying the resist ink by the ink jet method can be suppressed, and a fine resist pattern can be formed with high accuracy. It is to provide a resist substrate pretreatment composition that can be made.
  • the present invention is a resist substrate pretreatment composition containing an amphoteric surfactant (A1), an anionic surfactant (A2), and water, such as the amphoteric surfactant (A1).
  • the numerical value obtained by subtracting the numerical value of the pH of the resist substrate pretreatment composition from the numerical value of the resist substrate Is from -3 to 4, and the number of moles of the amphoteric surfactant (A1) relative to the total number of moles of the amphoteric surfactant (A1) and moles of the anionic surfactant (A2)
  • the ratio of the number is 0.
  • Resist substrate pretreatment composition characterized by being 1 to 0.9;
  • a resist placement step for placing a resist substrate for placing a resist substrate.
  • the resist substrate pretreatment composition of the present invention has an effect of suppressing the wetting and spreading of the inkjet resist in the manufacturing process of the resist substrate. Therefore, a fine resist pattern can be created with high accuracy, and the wiring density can be increased.
  • the resist substrate pretreatment composition of the present invention will be used for a substrate.
  • a substrate a single base material such as phenol resin, epoxy resin, polyimide resin, polyethylene terephthalate, Teflon (registered trademark), ceramic, or a composite base material combining them with glass or paper on an insulating base material , And a metal such as copper or aluminum arranged as a circuit material.
  • the resist substrate pretreatment composition of the present invention is a resist substrate pretreatment composition containing an amphoteric surfactant (A1), an anionic surfactant (A2), and water, the amphoteric surfactant described above.
  • the pH value of the amphoteric surfactant] is from -3 to 4, and the amphoteric surfactant with respect to the total number of moles of the amphoteric surfactant (A1) and the number of moles of the anionic surfactant (A2) Proportion of the number of moles of (A1) ([number of moles of amphoteric surfactant (A1)] / ([number of moles of amphoteric surfactant (A1)] + [number of moles of anionic surfactant (A2)]
  • a value obtained by subtracting the pH value of the resist substrate pretreatment composition from the value of the isoelectric point of the amphoteric surfactant (A1) ([amphoteric surfactant (A1) The numerical value of the isoelectric point]-[the numerical value of the pH of the resist substrate pretreatment composition]) is from -3 to 4. That is, the isoelectric point of the amphoteric surfactant (A1) is at least 3 smaller than the pH value of the resist substrate pretreatment composition, and less than or equal to 4 greater than the pH value of the resist substrate pretreatment composition. It is.
  • the amphoteric surfactant is not excessively negatively charged in the resist substrate pretreatment composition of the present invention, and is preferably not excessively positively charged.
  • the value obtained by subtracting the pH value of the resist substrate pretreatment composition from the value of the isoelectric point of the amphoteric surfactant (A1) is preferably ⁇ 2.5 to 3.8, more preferably ⁇ 2 to 3.6. If the value obtained by subtracting the value of the pH of the resist substrate pretreatment composition from the value of the isoelectric point of the amphoteric surfactant (A1) is outside the range of -3 to 4, the amphoteric surfactant (A1) Since it is charged too positively or negatively, the resist ink wetting and spreading suppression performance deteriorates.
  • isoelectric point of amphoteric surfactant (A1) means a value measured by the following method. That is, first, 4 wt% or more amphoteric surfactant (A1) 1 wt% aqueous solutions having different pHs are prepared. Next, these electrical conductivities are measured, and a correlation graph between pH and electrical conductance is created. In this correlation graph, when a minimum value appears in electrical conductivity, the numerical value of pH at which the minimum value appears is the “isoelectric point of amphoteric surfactant (A1)”. In this correlation graph, when a minimum value does not appear in the electrical conductivity, an amphoteric surfactant (A1) 1% by weight aqueous solution having a different pH is prepared until the minimum value appears in the correlation graph. Measure.
  • the pH of the resist substrate pretreatment composition is a value measured at 25 ° C. using a pH meter (manufactured by Horiba, Ltd.).
  • the ratio of the number is 0. It is 1 to 0.9, preferably 0.15 to 0.85, and more preferably 0.2 to 0.8. If the above numerical value is less than 0.1, the resist ink wetting and spreading suppression performance deteriorates, and if it exceeds 0.9, the resist ink wetting and spreading suppression performance deteriorates.
  • the resist substrate pretreatment composition of the present invention preferably further contains an organic solvent (S) having a boiling point of 100 ° C. or higher and an SP value of 8 to 20.
  • organic solvent S
  • ethylene glycol Boiling point: 198 ° C., SP value: 17.8
  • diethylene glycol Boiling point: 244 ° C., SP value: 15.0
  • propylene glycol Boiling point: 188 ° C., SP value: 15.9
  • alcohols such as propylene glycol monomethyl ether (boiling point: 120 ° C., SP value: 11.3), glycerin (boiling point: 290 ° C., SP value: 20.0), diethylene glycol dimethyl ether (boiling point: 162 ° C., SP Value: 8.1) ether, monoethanolamine (boiling point: 171 ° C., SP value: 14.3), isopropanolamine (boiling point: 160 ° C., SP
  • the organic solvent (S) is ethylene glycol, diethylene glycol, propylene glycol, glycerin, 2- (2-aminoethylamino) ethanol, ethylenediamine-N, N, from the viewpoint of suppressing increase in viscosity when using the resist substrate pretreatment composition.
  • N ′, N′-tetraethanol is preferred, and diethylene glycol, propylene glycol, ethylenediamine-N, N, N ′, N′-tetraethanol is more preferred.
  • the resist substrate pretreatment composition of the present invention contains an organic solvent (S)
  • the viscosity of the resist substrate pretreatment composition increases with time when the resist substrate pretreatment composition is used in an open environment. Can be suppressed.
  • the content of the organic solvent (S) is preferably from the viewpoint of suppressing an increase in viscosity when the resist substrate pretreatment composition is used, with respect to the weight of the resist substrate pretreatment composition. It is 1 to 40% by weight, more preferably 3 to 30% by weight, and most preferably 5 to 20% by weight.
  • SP value in this specification is calculated by the method described in the following document proposed by Fedors et al. "POLYMER ENGINEERING AND SCIENCE, FEBRUARY, 1974, Vol. 14, No. 2, ROBERT F. FEDORS. (Pp. 147-154)"
  • the amphoteric surfactant (A1) is preferably a compound represented by the following general formula (1).
  • R 1 in the general formula (1) is a monovalent saturated hydrocarbon group having 1 to 25 carbon atoms or a monovalent unsaturated hydrocarbon group having 2 to 25 carbon atoms.
  • the monovalent saturated hydrocarbon group having 1 to 25 carbon atoms include methyl group, ethyl group, n-propyl group, hexyl group, cyclohexyl group, n-butyl group, octyl group, nonyl group, decyl group, undecyl group, Examples include lauryl group, stearyl group, n-tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, icosyl group, heicosyl group, docosyl group, tricosyl group and tetracosyl group.
  • Examples of the monovalent unsaturated hydrocarbon group having 2 to 25 carbon atoms include an octadecenyl group and an octadecadienyl group.
  • R 1 is preferably an octyl group, a nonyl group, a decyl group, an undecyl group, a lauryl group and a stearyl group, more preferably an octyl group and a lauryl group, and even more preferably a lauryl group from the viewpoint of suppressing wetting and spreading of the resist ink.
  • R 2 in the general formula (1) is a divalent saturated hydrocarbon group having 1 to 25 carbon atoms or a divalent unsaturated hydrocarbon group having 2 to 25 carbon atoms.
  • Examples of the divalent saturated hydrocarbon group having 1 to 25 carbon atoms and the divalent unsaturated hydrocarbon group having 2 to 25 carbon atoms include ethylene group, propylene group, butylene group, isobutylene group, pentylene group, isopentylene group, and neopentylene group.
  • R 2 is preferably a divalent saturated hydrocarbon group having 1 to 25 carbon atoms from the viewpoint of solubility in water, more preferably an ethylene group, a propylene group and a butylene group, still more preferably an ethylene group and a propylene group, and an ethylene group. Particularly preferred.
  • R 3 in the general formula (1) is a divalent saturated hydrocarbon group having 1 to 25 carbon atoms or a divalent unsaturated hydrocarbon group having 2 to 25 carbon atoms.
  • Examples of the divalent saturated hydrocarbon group having 1 to 25 carbon atoms and the divalent unsaturated hydrocarbon group having 2 to 25 carbon atoms include methylene group, ethylene group, propylene group, butylene group, isobutylene group, pentylene group, and isopentylene.
  • neopentylene group 1-methylbutylene group, 2-methylbutylene group, 1,2-dimethylpropylene group, 1-ethylpropylene group, hexylene group, isohesylene group, 1-methylpentylene group, 2-methylpentylene group 3-methylpentylene group, 1,1-dimethylbutylene group, 1,2-dimethylbutylene group, 2,2-dimethylbutylene group, 1-ethylbutylene group, 1,1,2-trimethylpropylene group, 1, 2,2-trimethylpropylene group, 1-ethyl-2-methylpropylene group, 1-ethyl-1-methylpropylene group, etc. .
  • R 3 is preferably a methylene group, an ethylene group, a propylene group or a butylene group, more preferably a methylene group or an ethylene group, and even more preferably a methylene group from the viewpoint of solubility in water.
  • X in the general formula (1) is an integer of 1 to 20. From the viewpoint of suppressing wetting and spreading of the resist ink, it is preferably 1 to 15, more preferably 1 to 10, and still more preferably 1 to 5.
  • Each hydrocarbon group represented by R 2 when x is 2 or more may be the same hydrocarbon group or different hydrocarbon groups.
  • M + is a counter ion. Any anion can be used as long as it can neutralize the anion electrically and form a water-soluble salt with the anion, such as a cation, proton, protonated amine, and ammonium ion formed from an alkali metal or alkaline earth metal. Is mentioned.
  • sodium, potassium, primary amines alkylamines such as methylamine, ethylamine and butylamine, monoethanolamine and guanidine
  • secondary amines dialkylamines such as dimethylamine, diethylamine and dibutylamine and diethanolamine
  • Tertiary amines ⁇ trialkylamines such as trimethylamine, triethylamine and tributylamine, triethanolamine, N-methyldiethanolamine and 1,4-diazabicyclo [2.2.2] octane etc. ⁇
  • amidine ⁇ 1,8-diazabicyclo [5.4.0] -7-undecene hereinafter abbreviated as DBU), 1,5-diazabicyclo [4.3.0] -5-nonene, 1H-imidazole, 2-methyl-1H-imidazole, 2 -Ethyl-1H- Midazole, 4,5-dihydro-1H-imidazole, 2-methyl
  • Specific examples of the compound represented by the general formula (1) include octylamine ethyleneimine 2-mol adduct sodium acetate, nonylamine ethyleneimine 2-mol adduct sodium acetate, decylamine ethyleneimine 2-mol adduct acetic acid.
  • sodium octylamine ethyleneimine 2 mol adduct sodium acetate, sodium laurylamine ethyleneimine 2 mol adduct sodium acetate, sodium laurylamine ethyleneimine 3 mol adduct sodium acetate, 2 mol laurylamine ethyleneimine adduct Potassium acetate and laurylamine ethyleneimine 2-mole adduct sodium propionate are preferred, sodium laurylamine ethyleneimine 2-mole adduct sodium acetate and laurylamine ethyleneimine 2-mole adduct potassium acetate are more preferred, and laurylamine ethyleneimine 2-mole adduct Sodium acetate is more preferable.
  • the isoelectric point of the amphoteric surfactant (A1) is preferably 8.0 to 11.0, more preferably 8 from the viewpoint of the effect of suppressing wetting and spreading of the resist ink. .5 to 11.0.
  • the anionic surfactant (A2) is preferably a compound represented by the following general formula (2) and / or general formula (3).
  • R 4 in the general formula (2) is a saturated hydrocarbon group having 1 to 25 carbon atoms or an unsaturated hydrocarbon group having 2 to 25 carbon atoms.
  • the saturated hydrocarbon group having 1 to 25 carbon atoms or the unsaturated hydrocarbon group having 2 to 25 carbon atoms include methyl group, ethyl group, n-propyl group, hexyl group, cyclohexyl group, n-butyl group, octyl group, Nonyl group, decyl group, undecyl group, lauryl group, stearyl group, n-tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, icosyl group, heicosyl group, docosyl group, tricosyl group, Examples include a tetracosyl group, an
  • R 4 is preferably a saturated hydrocarbon group having 1 to 25 carbon atoms from the viewpoint of suppressing the wetting and spreading of the resist ink, more preferably an octyl group, a nonyl group, a decyl group, an undecyl group, a lauryl group, and a stearyl group.
  • a lauryl group is further preferred, and a lauryl group is particularly preferred.
  • a 1 in the general formula (2) is an alkylene group having 2 to 12 carbon atoms.
  • the alkylene group having 2 to 12 carbon atoms include ethylene group, propylene group, butylene group, isobutylene group, pentylene group, isopentylene group, neopentylene group, 1-methylbutylene group, 2-methylbutylene group, 1,2 -Dimethylpropylene group, 1-ethylpropylene group, hexylene group, isohexylene group, 1-methylpentylene group, 2-methylpentylene group, 3-methylpentylene group, 1,1-dimethylbutylene group, 1,2- Dimethylbutylene group, 2,2-dimethylbutylene group, 1-ethylbutylene group, 1,1,2-trimethylpropylene group, 1,2,2-trimethylpropylene group, 1-ethyl-2-methylpropylene group and 1- Examples thereof include an ethyl-1-methylpropylene group.
  • a 1 is preferably
  • y is an integer of 1 to 20. From the viewpoint of suppressing wetting and spreading of the resist ink, it is preferably 1 to 15, more preferably 1 to 10, and still more preferably 1 to 5.
  • each alkylene group represented by A 1 may be the same alkylene group or different alkylene groups.
  • M + is a counter ion. Any anion can be used as long as it can neutralize the anion electrically and form a water-soluble salt with the anion, such as a cation, proton, protonated amine and ammonium ion formed from an alkali metal or alkaline earth metal. Is mentioned.
  • M + includes sodium, potassium, primary amines (alkylamines such as methylamine, ethylamine and butylamine, monoethanolamine and guanidine); secondary amines (dialkylamines such as dimethylamine, diethylamine and dibutylamine and diethanolamine) ); Tertiary amines ⁇ trialkylamines such as trimethylamine, triethylamine and tributylamine, triethanolamine, N-methyldiethanolamine and 1,4-diazabicyclo [2.2.2] octane etc. ⁇ ; amidine ⁇ 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [4.3.0] -5-nonene, 1H-imidazole, 2-methyl-1H-imidazole, 2-ethyl-1H-imidazole, 4 , 5-Di Hydro-1H-imidazole, 2-methyl-4,5-dihydro-1H-imi
  • R 5 in the general formula (3) is a saturated hydrocarbon group having 1 to 25 carbon atoms or an unsaturated hydrocarbon group having 2 to 25 carbon atoms.
  • the saturated hydrocarbon group having 1 to 25 carbon atoms or the unsaturated hydrocarbon group having 2 to 25 carbon atoms include methyl group, ethyl group, n-propyl group, hexyl group, cyclohexyl group, n-butyl group, octyl group, Nonyl group, decyl group, undecyl group, lauryl group, stearyl group, n-tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, icosyl group, heicosyl group, docosyl group, tricosyl group, Examples include a tetracosyl group, an
  • R 4 is preferably a saturated hydrocarbon group having 1 to 25 carbon atoms from the viewpoint of suppressing the wetting and spreading of the resist ink, more preferably an octyl group, a nonyl group, a decyl group, an undecyl group, a lauryl group, and a stearyl group.
  • a lauryl group is further preferred, and a lauryl group is particularly preferred.
  • M + in the general formula (3) is a counter ion. Any anion can be used as long as it can neutralize the anion electrically and form a water-soluble salt with the anion, such as a cation, proton, protonated amine and ammonium ion formed from an alkali metal or alkaline earth metal. Is mentioned.
  • M + includes sodium, potassium, primary amines (alkylamines such as methylamine, ethylamine and butylamine, monoethanolamine and guanidine); secondary amines (dialkylamines such as dimethylamine, diethylamine and dibutylamine and diethanolamine) ); Tertiary amines ⁇ trialkylamines such as trimethylamine, triethylamine and tributylamine, triethanolamine, N-methyldiethanolamine and 1,4-diazabicyclo [2.2.2] octane etc. ⁇ ; amidine ⁇ 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [4.3.0] -5-nonene, 1H-imidazole, 2-methyl-1H-imidazole, 2-ethyl-1H-imidazole, 4 , 5-Di Hydro-1H-imidazole, 2-methyl-4,5-dihydro-1H-imi
  • the anionic surfactant (A2) is an alkyl sulfate ester (salt) having a saturated or unsaturated hydrocarbon group having 1 to 25 carbon atoms (salt) ( A2-1) and polyoxyalkylene alkyl ether sulfate (salt) (A2-2) in which the alkyl group is a saturated or unsaturated hydrocarbon group having 1 to 25 carbon atoms.
  • Alkyl sulfate ester (salt) (A2-1) having a saturated or unsaturated hydrocarbon group having 1 to 25 carbon atoms includes mono- and diesters such as propanol, capryl alcohol, lauryl alcohol and oleyl alcohol; The salt etc. are mentioned.
  • polyoxyalkylene alkyl ether sulfate (salt) examples include mono- and diesterified products of alkylene oxide adducts of primary and secondary alcohols and salts thereof.
  • the primary alcohol used as a raw material for the polyoxyalkylene alkyl ether sulfate (salt) (A2-2) may be linear, branched or cyclic, and may have a saturated or unsaturated bond. Specific examples of primary alcohols include hexane-1-ol, heptane-1-ol, octan-1-ol, nonan-1-ol, decan-1-ol, dodecan-1-ol, and tetradecan-1-ol.
  • branched alcohols such as isodecyl alcohol
  • cyclic alcohols such as cyclohexanol
  • beef tallow alcohol hardened tallow alcohol and palm which are mixtures thereof
  • Examples include primary alcohols derived from animal and vegetable oils such as oil alcohol.
  • the secondary alcohol used as a raw material for the polyoxyalkylene alkyl ether sulfate (salt) (A2-2) may be linear, branched or cyclic, and may have a saturated or unsaturated bond. Secondary alcohols include propan-2-ol, butan-2-ol, cyclohexanol, decan-2-ol and the like. As the secondary alcohol, one kind or a mixture of two or more kinds may be used.
  • the alkylene oxide in the polyoxyalkylene alkyl ether sulfate (salt) (A2-2) is an alkylene oxide having 2 to 12 carbon atoms, such as ethylene oxide, 1,2-propylene oxide, 1,2-butylene oxide, 1,2 -Hexylene oxide, tetrahydrofuran, 3-methyltetrahydrofuran and the like.
  • the oxyalkyl groups may be the same or different, and may be a random bond or a block bond.
  • polyoxyalkylene alkyl ether sulfate (salt) examples include lauryl alcohol ethylene oxide 3 mol adduct sulfate sodium (salt), lauryl alcohol ethylene oxide 5 mol propylene oxide 3 mol adduct sulfuric acid.
  • examples of water include ultrapure water, ion exchange water, reverse osmosis (RO) water, and distilled water, and ultrapure water is preferable from the viewpoint of cleanliness.
  • the weight ratio of the amphoteric surfactant (A1) to the anionic surfactant (A2) ([weight of amphoteric surfactant (A1)] / [anionic surfactant)
  • the weight of the agent (A2)]) is preferably 0.1 to 5.0, more preferably 0.3 to 3.0, and more preferably 0.4 to 2.0 from the viewpoint of suppressing the wetting and spreading of the resist. It is.
  • the ratio of the total weight of the amphoteric surfactant (A1) and the anionic surfactant (A2) to the weight of the resist substrate pretreatment composition is preferably 0.01 to 20 from the viewpoint of suppressing wetting and spreading of the resist ink.
  • % By weight, more preferably 0.1 to 15% by weight, still more preferably 1 to 10% by weight.
  • the resist substrate pretreatment composition of the present invention preferably has a pH of 7.0 to 12.0. From the viewpoint of suppressing the wetting and spreading of the resist, it is preferably 7.5 to 11.5, more preferably 8.0 to 11.0, and still more preferably 8.5 to 11.0.
  • the resist substrate pretreatment composition of the present invention may contain a pH adjuster (B), a preservative (C), and the like as other constituents.
  • Examples of the pH adjuster (B) include acids (inorganic acids and organic acids) and alkalis (inorganic alkalis such as sodium hydroxide and potassium hydroxide, amines such as diethanolamine and isopropanolamine).
  • preservative (C) a commercially available preservative can be used.
  • the method for producing a resist substrate in the present invention is a method for producing a resist substrate including a step of performing substrate pretreatment before resist application using the resist substrate pretreatment composition of the present invention. That is, the method for producing a resist substrate of the present invention includes a substrate preparation step of preparing a substrate on which a circuit material is formed, and a pretreatment step of pretreating the substrate using the resist substrate pretreatment composition of the present invention. And a resist placement step of placing a resist on the substrate after the pretreatment step.
  • the circuit material formed on the substrate may be at least one selected from the group consisting of copper, aluminum, iron, tin, silver, nickel, titanium, chromium, and zinc. preferable.
  • the resist substrate manufactured by the method for manufacturing a resist substrate of the present invention can be used as a substrate for a printed wiring board.
  • ⁇ Production Example 4> In a container similar to Production Example 1, 186 parts of lauryl alcohol, 0.32 part of magnesium perchlorate, and 0.03 part of magnesium hydroxide were charged, and the inside of the mixed system was replaced with nitrogen, and then under reduced pressure (20 mmHg) And dehydration at 120 ° C. for 1 hour. Next, 88 parts of ethylene oxide (hereinafter also referred to as “EO”) was introduced at 150 ° C. so that the gauge pressure was 1 to 3 kgf / cm 2 . The reaction product was transferred to a glass reaction vessel, and 120 parts of chlorosulfonic acid was gradually added dropwise over 4 hours while maintaining the temperature at 20 ° C.
  • EO ethylene oxide
  • Examples 1 to 22> and ⁇ Comparative Examples 1 to 3> Each component was blended so as to have the composition shown in Tables 1 to 3, and stirred at 25 ° C. with a magnetic stirrer at 40 rpm for 20 minutes to prepare resist substrate pretreatment compositions (E1) to (E22) and comparative examples. Resist substrate pretreatment compositions (H1) to (H3) were obtained. The weight part of each component is a numerical value converted into a pure component, and water in each component was included in the pure water.
  • a copper test piece (C1020 oxygen-free copper, 20 mm ⁇ 50 mm ⁇ 1 mm) was used as a model substrate.
  • One substrate is immersed in 100 ml of 1% citric acid aqueous solution for 1 minute to remove copper oxide on the surface, and then rinsed with pure water having an electrical resistivity of 18 M ⁇ ⁇ cm or more for 10 seconds and then in 300 ml of pure water for 30 seconds. It was immersed for cleaning and dried with nitrogen.
  • the substrate is immersed in a resist substrate pretreatment composition at 25 ° C.
  • a copper test piece (C1020 oxygen-free copper, 20 mm ⁇ 50 mm ⁇ 1 mm) was used as a model substrate.
  • One substrate is immersed in 100 ml of 1% citric acid aqueous solution for 1 minute to remove copper oxide on the surface, and then rinsed with pure water having an electrical resistivity of 18 M ⁇ ⁇ cm or more for 10 seconds and then in 300 ml of pure water for 30 seconds. It was immersed for cleaning and dried with nitrogen.
  • the substrate was rinsed with pure water having an electrical resistivity of 18 M ⁇ ⁇ cm or more for 10 seconds, and immersed in 300 ml of pure water for 30 seconds for cleaning. Then, it was dried with nitrogen. By this operation, a copper oxide film was formed on the surface of the copper substrate.
  • a copper substrate on which a copper oxide film is formed is dipped in a resist substrate pretreatment composition at 25 ° C. for 1 minute, and then rinsed with pure water having an electrical resistivity of 18 M ⁇ ⁇ cm or more for 10 seconds to obtain 300 ml of pure water. After being immersed in the substrate for 30 seconds and washed, the substrate was dried with nitrogen to obtain a substrate after surface treatment.
  • the copper substrate subjected to the surface treatment with the resist substrate pretreatment compositions of Examples 1 to 22 has a large resist contact angle regardless of the surface oxidation state. As a result, wetting and spreading were suppressed.
  • the copper substrate subjected to the surface treatment with the resist substrate pretreatment compositions of Comparative Examples 1 to 3 had a small contact angle regardless of the surface oxidation state, and the wetting spread was not sufficiently suppressed.
  • the resist substrate pretreatment compositions of Examples 12 to 22 had a small viscosity increase rate in the open heating environment, and the stability of the resist substrate pretreatment composition in the open heating environment was improved. .
  • the resist substrate manufactured by using the resist substrate pretreatment composition of the present invention can suppress the spread of the resist and perform fine patterning on the substrate. Therefore, the resist substrate pretreatment composition of the present invention is useful for applications such as a resist substrate, particularly a printed wiring board substrate.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Detergent Compositions (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

L'invention concerne une composition de prétraitement de substrat de réserve avec laquelle le mouillage et l'étalement de l'encre de réserve après l'application par un procédé à jet d'encre peuvent être supprimés, ce qui permet de former un motif de réserve fine avec une précision élevée. La composition de prétraitement de substrat de réserve selon la présente invention est une composition de prétraitement de substrat de réserve qui contient un agent tensioactif ampholytique (A1), un agent tensioactif anionique (A2) et de l'eau. L'invention est caractérisée en ce que : une valeur numérique obtenue en soustrayant d'une valeur numérique d'un point isoélectrique de l'agent tensioactif ampholytique (A1) une valeur numérique du pH de la composition de prétraitement de substrat de réserve ([valeur numérique de point isoélectrique de l'agent tensioactif ampholytique (A1)] - [valeur numérique du pH de la composition de prétraitement de substrat de réserve]) est de -3 à 4 ; et le rapport du nombre molaire de l'agent tensioactif ampholytique (A1) à un nombre molaire total du nombre molaire de l'agent tensioactif ampholytique (A1) et du nombre molaire de l'agent tensioactif anionique (A2) ([nombre molaire d'agent tensioactif ampholytique (A1)] / ([nombre molaire d'agent tensioactif ampholytique (A1)] + [nombre molaire d'agent tensioactif anionique (A2)]) est de 0,1 à 0,9.
PCT/JP2017/043038 2016-12-22 2017-11-30 Composition de prétraitement de substrat de réserve et procédé de fabrication de substrat de réserve Ceased WO2018116780A1 (fr)

Priority Applications (3)

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CN201780070786.6A CN109964546B (zh) 2016-12-22 2017-11-30 抗蚀剂基板预处理组合物和抗蚀剂基板的制造方法
KR1020197013964A KR102120022B1 (ko) 2016-12-22 2017-11-30 레지스트 기판 전처리 조성물 및 레지스트 기판의 제조 방법
JP2018557639A JP6653771B2 (ja) 2016-12-22 2017-11-30 レジスト基板前処理組成物及びレジスト基板の製造方法

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10300921A (ja) * 1997-04-28 1998-11-13 Sumitomo Chem Co Ltd ブラックマトリックスの製造方法
JP2004299386A (ja) * 2003-03-20 2004-10-28 Ricoh Co Ltd 画像形成方法とそれに用いる画像形成装置及びインクセット
JP2009147295A (ja) * 2007-08-27 2009-07-02 E I Du Pont De Nemours & Co 基板上への光重合性ドライフィルムのウェットラミネーションを施すための組成物および方法
JP2011228517A (ja) * 2010-04-21 2011-11-10 C Uyemura & Co Ltd プリント配線基板の表面処理方法及び表面処理剤
WO2016111035A1 (fr) * 2015-01-07 2016-07-14 太陽インキ製造株式会社 Agent de traitement de surface pour supports métalliques

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263845A (ja) 1994-03-18 1995-10-13 Fujitsu Ltd プリント配線板の製造方法及びその製造装置
JPH0918115A (ja) 1995-06-30 1997-01-17 Kokusai Electric Co Ltd レジストパターンの形成方法
AU775470B2 (en) * 2000-03-03 2004-08-05 Rohm And Haas Company Removable coating composition and preparative method
CN100404274C (zh) * 2003-03-20 2008-07-23 株式会社理光 成像方法、成像装置、油墨组、油墨盒和印刷物
US7781142B2 (en) * 2004-09-30 2010-08-24 Jsr Corporation Copolymer and top coating composition
JP2007227715A (ja) 2006-02-24 2007-09-06 Stanley Electric Co Ltd パターニング基板の製造方法
US20070237899A1 (en) 2006-04-05 2007-10-11 David Sawoska Process for creating a pattern on a copper surface
US20100230696A1 (en) * 2007-08-29 2010-09-16 Takahiro Fukunaga Wiring member, metal component with resin and resin sealed semiconductor device, and processes for producing them
JP5498328B2 (ja) 2010-09-14 2014-05-21 積水化学工業株式会社 プリント配線板の製造方法
EP2899593A4 (fr) * 2012-09-10 2016-06-22 Jsr Corp Composition servant à la formation de film de sous-couche de résine et procédé de formation de motif

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10300921A (ja) * 1997-04-28 1998-11-13 Sumitomo Chem Co Ltd ブラックマトリックスの製造方法
JP2004299386A (ja) * 2003-03-20 2004-10-28 Ricoh Co Ltd 画像形成方法とそれに用いる画像形成装置及びインクセット
JP2009147295A (ja) * 2007-08-27 2009-07-02 E I Du Pont De Nemours & Co 基板上への光重合性ドライフィルムのウェットラミネーションを施すための組成物および方法
JP2011228517A (ja) * 2010-04-21 2011-11-10 C Uyemura & Co Ltd プリント配線基板の表面処理方法及び表面処理剤
WO2016111035A1 (fr) * 2015-01-07 2016-07-14 太陽インキ製造株式会社 Agent de traitement de surface pour supports métalliques

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CN109964546B (zh) 2021-09-10
JPWO2018116780A1 (ja) 2019-06-24
JP6653771B2 (ja) 2020-02-26
CN109964546A (zh) 2019-07-02
KR102120022B1 (ko) 2020-06-05
TW201825453A (zh) 2018-07-16
TWI698413B (zh) 2020-07-11

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