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WO2018141621A2 - Module de puissance - Google Patents

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Publication number
WO2018141621A2
WO2018141621A2 PCT/EP2018/051816 EP2018051816W WO2018141621A2 WO 2018141621 A2 WO2018141621 A2 WO 2018141621A2 EP 2018051816 W EP2018051816 W EP 2018051816W WO 2018141621 A2 WO2018141621 A2 WO 2018141621A2
Authority
WO
WIPO (PCT)
Prior art keywords
power module
contact piece
electrical component
module according
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/051816
Other languages
German (de)
English (en)
Other versions
WO2018141621A3 (fr
Inventor
Michael Kaspar
Kai Kriegel
Stefan Stegmeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2018141621A2 publication Critical patent/WO2018141621A2/fr
Publication of WO2018141621A3 publication Critical patent/WO2018141621A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Definitions

  • Power module The invention relates to a power module.
  • passive components such as resistors and semiconductor devices such as
  • IGBTs IGBTs, diodes, MOSFETs, LEDs and substrates such as FR4, DCB (direct copper bonded), AMB (active metal braze) and lead frames electrically connected by means of a construction and connection technology.
  • FR4 direct copper bonded
  • AMB active metal braze
  • connection techniques are known.
  • substrate-remote electrical contacts below ⁇ regularly have special requirements for the connection technology.
  • robust contacts with a long service life should be able to be realized, which, however, should be as inexpensive and manufacturable as possible.
  • the power module according to the invention has at least one electrical component with a contact surface.
  • the at least one elekt ⁇ generic component by means of at least processing module electrically contacts a contact surface on at least one contact piece of open-pore material of the performance and the at least one electrical component and are a contact piece at least, at least in directions of the flat extensions the at least one contact surface, relative to one another, and preferably also ⁇ relative to at least one further component of the power module, at least fixed in a form-fitting manner.
  • the optionally present at least one further component is a component, which is contacted electrically to the contact piece.
  • the power module according to the invention can be produced very simply, since the relative arrangement of electrical component and contact piece or, if appropriate, the relative arrangement tion of electrical component and contact piece with one or more other components of the power module by form-fitting fixing is extremely inexpensive.
  • a permanent, robust and reliable contacting of the electrical component and the contact piece with one another and possibly reliable electrical contacting of the electrical component and / or the contact piece with one or more further components of the power module can be achieved by means of the form-fitting attachment, ie by means of the positive locking - ses, make sure.
  • the power module according to the invention can consequently be implemented simply and reliably.
  • a robust and reliable operation is also advantageously ensured due to the positive connection, since an electrical contact, which is accomplished approximately by means of electroplating, not alone must bear the possibly occurring during operation mechanical load. In particular, such a load can result, for example, from a flow around the power component or from a flow around and / or throughflow of the contact piece with cooling fluid.
  • the "open pore” means for the purposes of this application, that pores of the material of the at least one contact piece form inlets to the surface thereof, can penetrate into the contact piece by wel ⁇ che from the outside, in particular fluid, such as a guided in a cooling passage cooling fluid.
  • fluid such as a guided in a cooling passage cooling fluid.
  • lock such a contact piece of the positive fit is particularly suitable because the contact piece is regularly used for particular flat electrical contacting.
  • the material of the at least one con ⁇ clock track on an open cell structure. In this way, by the contact piece in particular a cooling fluid or a cooling liquid are passed through and thus the at least one power component are efficiently cooled.
  • the power module according to the invention preferably has a substrate, wherein the substrate of the power module forms the electrical component of the power module.
  • the erfin ⁇ tion proper power module can be produced in this development of the invention is particularly inexpensive and robust, since the contact piece to the substrate by means of positive locking can be easily set and, in particular subsequently, simply electrically, preferably galvanically, ie by means of electroplating, can be contacted , According to the invention, a substrate-distant electrical contacting is thus possible with extremely little effort.
  • a power component forms the electrical component.
  • the power component is in electrical contact with a substrate of the power module by means of the contact piece, the substrate, contact piece and power module being respectively fixed relative to one another.
  • the at least one contact piece is formed with, in particular, a metal sponge and / or a metal foam and / or with a fabric-like and / or net-like structure.
  • the at least one contact piece with, in particular of, a ge ⁇ webeartigen and / or foam-like and / or net-like
  • the at least one contact piece is formed from or with metal, in particular copper and / or silver and / or nickel and / or gold and / or silver and / or tin.
  • the or at least one electrical component and / or at least one contact piece of both form-fitting and material-set according to the invention Leis ⁇ processing module.
  • the electrical component and / or the contact piece is preferably fixed by means of transfer molding or molding or by casting or injection molding or electroplating or by gluing or soldering.
  • the defined at least one electrical component and / or at least one contact piece by means of a frame according to the invention the power module having front ⁇ preferably in the direction of the sheet-like extensions of the contact surface of the electrical component by leading fürbre ⁇ cations.
  • the frame extends from a preferably present substrate as described above.
  • cooling fluid advantageously coolant, can be passed through the frame and consequently through the contact piece and / or along the contact piece and / or electrical component.
  • the inventive power module of the framework projections on which at least transversely, preferably ⁇ perpendicular, to the contact surface of at least one elekt ⁇ generic component extend.
  • the frame is formed by means of at least one part of a mold wafer.
  • the power module according to the invention particularly preferably has a cooling-flow path, which is designed to guide a cooling fluid along a cooling-flow direction.
  • the cooling flow direction extends at least along a direction of the planar extent of the contact surface of the at least one power component.
  • the cooling flow direction deviates by more than 30 degrees, suitably at most 15 degrees, preferably 5 degrees and IDE allay from more than 3 degrees from the plane of the planar extents of the contact surface of at least one Leis ⁇ processing component.
  • the cooling fluid flows in the novel power module to a certain extent tangentially on the contact area and / or along one flat side of at least one power component is so ⁇ that the efficiency of heat dissipation of the power device maximizes.
  • the cooling flow path passes through the contact piece.
  • the frame is preferably designed for mounting a rectangular contact piece and / or a rectangular power component.
  • the power module according to the invention has a guide means, in particular for linear and / or sliding guidance, by means of which the electrical component and / or the contact piece can be guided relative to one another in that relative position, in which contact piece and electrical component relative to one another are fixed.
  • a power component is in the inventive method for manufacturing a power module according to the invention as above described at least Hérange ⁇ coated with a contact surface.
  • the at least one power component and / or the at least one contact piece is or will, at least in
  • the power component is electrically contacted by means of at least one contact piece formed with open-pored material.
  • the contacting and setting can be carried out simultaneously or in any of the possible sequences in succession. The invention will be explained in more detail with reference to an embodiment shown in the drawing. It zei ⁇ gen:
  • FIG. 1 is a longitudinal sectional view of a first substrate of a first exemplary embodiment of a power module according to the invention and a frame of the power module connected thereto;
  • Figure 2 according to the first substrate with the frame of the first exemplary embodiment of the inventive power ⁇ module. 1 schematically in a plan view,
  • FIG. 1 and 2 open with power components and contact pieces
  • FIG. 4 shows the power module according to the invention in accordance with FIG. 3 with a second substrate schematically in longitudinal section
  • FIG. 5 shows a second embodiment of a erfindungsge ⁇ MAESSEN power module with a frame schematically in longitudinal section
  • Figure 5a shows the substrate of the second embodiment of the power module according to the invention.
  • 5 is a schematic plan view
  • FIG. 6 shows a frame with a power component of a third embodiment of an inventive
  • Power module schematically in a plan view, as well Figure 7 according to the third embodiment of the invention shown with the SEN power module attached to the side walls of a cooling passage of the power module of the invention frame with the power device.
  • Fig. 6 schematically in cross section.
  • the power module according to the invention comprises in a first exemplary embodiment, as shown in FIG. 1, a substrate 10 in a manner known per se.
  • the substrate 10 is formed as a flat part, which has two mutually parallel flat sides 20, 30, which each extend horizontally and perpendicular to the plane of the drawing.
  • the substrate 10 has a known manner
  • each of the contact surfaces ⁇ 50 is partially circumferentially surrounded by a frame 70 which is attached to the flat side 20 and continues extended perpendicularly from the flat side of the twentieth Basically, the frame 70 may be in other, not specifically shown in the drawing
  • Embodiments also extend from the contact surface 50.
  • frames 70 can also extend from the substrate 10 on the flat side 30 of the substrate 10 and / or on the contact surface 60.
  • the frame 70 consists, as shown in Fig. 2 each of four general vertical cylinders 80 (in the mathematical sense, ie vertical cylinder with not necessarily circular base) with L-shaped base, wherein the lateral surfaces of the vertical cylinder 80 perpendicular from the flat side 20th continue (for clarity, no contact surfaces are shown in Fig. 2).
  • general vertical cylinders 80 in the mathematical sense, ie vertical cylinder with not necessarily circular base
  • L-shaped base wherein the lateral surfaces of the vertical cylinder 80 perpendicular from the flat side 20th continue (for clarity, no contact surfaces are shown in Fig. 2).
  • the L-shaped bases are oriented and arranged relative to each other such that the legs of the L-shaped base cylinders 80 abut the exterior of such side portions of an imaginary rectangle as the corners of the imaginary rectangle. That is, a flat part with right ⁇ rectangular longitudinal cross-sectional area with its corners with the apexes of the cylinder 80 be brought into contact and thus a form-fitting fixed in the direction of the sheet-like extensions of the flat side 20 of the substrate 10, and thus in the directions of two-dimensional extensions of the contact surface 50th
  • the cylinders 80 form linear sliding guides for flat parts with rectangular cross-sectional area in the position in which the flat parts are fixed.
  • the cylinders 80 thus allow a particularly simple production according to the invention of the power module according to the invention.
  • the cylinder 80 of the frame 70 are molded in the embodiment shown ⁇ example, to the substrate 10.
  • the frame 70 may in principle also be formed with a different shape, for example, the frame 70, the contact surfaces 50 fully. be circumferentially formed surrounding and be designed to be permeable by means of passages for cooling liquid.
  • the frame may be integrally connected ⁇ 70 in other ways to the substrate 10 may be 3D-printed, for example, to the substrate 10 or glued or soldered or sintered, or simply firmly pressed ⁇ .
  • 3D method can be used in further in other embodiments, 3D method, and in particular SLS (Selective Laser Sintering) and / or SLA (StereoLitho ⁇ graphy) and / or polygraphy and / or Fused Deposition fashion ling (FDM) and / or 3DP (3D Printing) and / or vacuum casting and / or other methods.
  • power module according to the invention to power components 90, which in turn flat parts with flat sides 92 bil ⁇ .
  • the power components 90 have on these flat sides 92 electrical surface contacts 95 for electrical contacting.
  • the power components 90 also have rectangular
  • the power components 90 are spaced from the contact surfaces 50 on the substrate 10 and from the substrate 10 itself and electrically conductively ⁇ connected by means of electrically conductive ⁇ the contact pieces 100 with a rectangular longitudinal sectional area of the contact surfaces 50 or other components of the inventions ⁇ inventive power module.
  • the contact pieces 100 are also introduced with their rectangular longitudinal sectional area in the frame 70.
  • power module of the ⁇ art to the invention is manufactured such that the first contact pieces 100 are introduced to Gas- respectively in a frame 70 in the direction of the substrate 10 and are guided by means of the cylinder 80 toward the flat side 20 of the substrate to be slidably and in Directions of the planar extensions of the flat side 20 and thus in the direction of the planar extensions of the contact surfaces 50 are fixed and subsequently electrically contacted, for example by means of electroplating to the contact surfaces 50 of the substrate 10.
  • power components 90 are in the direction of the sub ⁇ strat to 10 and introduced in some of the frame 70 to be guided by the cylinder 80 to the substrate 10 is also placed in the direction of the fixed planar extents of the flat side of the twentieth
  • the power device 90 is in turn in electrical contact with the con tact ⁇ piece 100 by means of electroplating.
  • contact piece 100 and power component 90 and substrate 10 can be electrically contacted in a further embodiment of he ⁇ inventive method in a single operation by means of electroplating.
  • the power components 90 are bipolar transistors with iso ⁇ profiled gate electrode (English: “Insulated-Gate Bipolar Transistor” IGBT) and each have flat sides 92 having opposing to Along the flat sides 92 to thin film-like surface contacts 95 extend the power components 90, which as a flat Chipmetallmaschineen. are formed.
  • the FLAE ⁇ chenterne 95 of the power components 90 each made of copper.
  • 95 In principle surface contacts also all or part of or silver, or from or with AlSiCu, sons ⁇ term metals or other electrically conductive materials may be formed.
  • the contact pieces 100 are each made of open-pore and open-cell material, and realized as an electrically conductive copper sponges.
  • the contact pieces 100 ⁇ with cooling fluid, for example cooling liquid or it is understood that in other, not specifically illustrated embodiments, which otherwise correspond to the embodiments explained with reference to FIGS, the open-pore contact pieces 100 also may consist of other open-pore and electrically conductive materials, such as aluminum or titanium contacts formed from fabrics or nets or other porous structures or formed from or with other metals contacts. For example, with conductive Ma ⁇ terialien partially coated with conductive particles or staggered polymer sponges as contact pieces 100 are used.
  • the contact pieces 100 are connected in the illustratedssensbei ⁇ game galvanically and in the manufacture of the inventive ⁇ SEN power module using an electrolytic bath of surface contacts 95 of the power components 90 and to the electrical contact areas 50 of the substrate 10 degrees. It is galvanically copper on the contact surface of contact ⁇ pieces 100 and contact surfaces 50 of the substrate 10 or FLAE ⁇ chenANDen further components of the power module of the invention and the contact pieces 100 and the surfaces ⁇ contacts 95 of the power components 90 is deposited so that the contact pieces 100 each cohesively and electrically are conductively connected to the contact surfaces 50 of the substrate 10 and / or further components of the power module according to the invention and / or the surface contacts 95 of the power components 90 ⁇ . All contact pieces 100 are connected to the respective surface contacts 95 and / or contact surfaces 50 against which they respectively rest.
  • the contact pieces 100 are not galvanically connected ⁇ , but connected by means of sintering or brazing or diffusion soldering or pressing or clamping or gluing.
  • the frames 70 may be as shown in FIG. 4 and spaced above each other.
  • adjacent frames 70 can also be connected to one another in a material-locking manner, for example in one piece or with be formed one-piece cylinders, which each belong to adjacent frames at the same time.
  • a single straight cylinder 115 may be present instead of two adjacent L-shaped straight cylinders associated with adjacent frames 70.
  • This single straight cylinder has a base of T-shape, with the central web 116 of the T-shape being widened with respect to the beam 118 of the T-shape.
  • the widening of the centra ⁇ len web 116 can view a certain extent as a filled intermediate space between two L-shaped cylinders.
  • the contact pieces are not necessarily 100 ar ⁇ retiert in frame 70.
  • the power components 90 are surrounded by a full-frame frame plate 300, which defines the power components 90 at least in a form-fitting manner.
  • the power components 90 are also materially connected to the frame plate, in the illustrated case the power component 90 is cast into the frame plate 300, i. the power component is at least partially embedded in the frame plate 300 such that the frame plate overlaps the power component 90 in the direction perpendicular to its flat sides.
  • the frame plates 300 are in this case formed in such a way that the power components 90 separated from a wafer are cast into a mold wafer 302 in a manner known per se, from which the power components 90 then each together with a protruding frame, which forms the frame plate 300, from the mold wafer 302 are cut out.
  • these frame flakes 300 are embedded in side walls 305 of a housing of the power module according to the invention, for example cast in, as shown in FIG. Since the frame plate 300, the power component 90 in its thickness direction, that is perpendicular to its flat Overlaps pages 92, the two flat sides are reliably electrically isolated by means of the frame plate 300.
  • the frame plate 300 to different Po ⁇ tentialen with which the power device 90 is in contact conductive Wegschlägstest sufficiently, so that an additional insulation to ⁇ is basically unnecessary.
  • the power component 90 can also be enclosed, for example, in frame plates such that the
  • Frame plates are formed from two half-shells, in which the power device 90 is inserted and preferably Festge ⁇ sticks.
  • the components of the power module according to the invention shown in the drawing are assembled by means of a per se be ⁇ known mounting process to a power module according to the invention:
  • the components of the beaumo ⁇ module comprise on the one hand the housing with (with respect to Figures 1 to 5) parallel to the plane extending side walls 305 (the embodiment according to Fig. 7 is shown in cross-section, ie the side walls 305 can be seen explicitly in cross-section here). Between these side walls 305, on the one hand, the substrate 10 and a further substrate 310 are arranged.
  • the further substrate 310 is formed the same ⁇ like the substrate 10 and forms a flat portion with two opposite flat sides 320, 330 which are parallel to the flat sides 20, 30 of the substrate 10 orien ⁇ advantage.
  • the flat sides 320, 330 likewise carry electrically conductive contact surfaces 350 by means of metal-filled plated-through holes.
  • the substrates 10, 310 delimit a cooling channel 360 of the power module for a cooling fluid of a cooling circuit of the power module.
  • the contact pieces which can be filled in between the side walls 305 befindli ⁇ chen gap in the whole width 100 which Power components 90 are positively locked by means of the frame plate 300 relative to the contact pieces 100, currency ⁇ ing in the embodiment according to. Fig. 1 to 5, the Needlesstü ⁇ bridge 100 are enclosed together with the power components 90 in frame 70.
  • the two execution ⁇ examples can be com ⁇ bined in a single power module.
  • Fig. 7 also in the vertical direction one or more times be repeated by the substrate 310 in turn takes the place of the substrate 10. In this way, a series ⁇ circuit of power components 90 can be realized.
  • the contact pieces 100 Due to the open-cell and open-pored structure of the contact pieces 100 and the Druchbrechungen the frame 70, the contact pieces 100 can be flowed through with cooling liquid.
  • cooling liquid cooling water and contact pieces 100 are suitably electrically isolated, for example by means of plastic, which is passed through Dis ⁇ penskanäle through the substrates 10, 310 therethrough to the contact pieces 100 (not shown in the drawing) ,
  • the power components 90 are now located directly in the cooling channel 360.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Le module de puissance comporte au moins un composant électrique pourvu d'une surface de contact. Le composant électrique est mis en contact électrique au moyen de la surface de contact avec au moins une pièce de contact, formée d'une matière à pores ouverts, du module de puissance et l'au moins un composant électrique et l'au moins une pièce de contact sont immobilisés au moins par complémentarité de formes l'un par rapport à l'autre au moins dans les directions d'extensions planes de l'au moins une surface de contact.
PCT/EP2018/051816 2017-02-06 2018-01-25 Module de puissance Ceased WO2018141621A2 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102017201821 2017-02-06
DE102017201821.6 2017-02-06
DE102017001249.0 2017-02-09
DE102017001249 2017-02-09
DE102017203132.8 2017-02-27
DE102017203132.8A DE102017203132A1 (de) 2017-02-06 2017-02-27 Leistungsmodul

Publications (2)

Publication Number Publication Date
WO2018141621A2 true WO2018141621A2 (fr) 2018-08-09
WO2018141621A3 WO2018141621A3 (fr) 2018-10-25

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DE (1) DE102017203132A1 (fr)
WO (1) WO2018141621A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020200721A1 (fr) * 2019-04-04 2020-10-08 Siemens Aktiengesellschaft Dispositif pour le refroidissement de composants électriques et/ou électroniques
EP3758061A1 (fr) * 2019-06-27 2020-12-30 SFI Electronics Technology Inc. Procédé d'emballage pour des composants semi-conducteurs à puce attachée unique de type matrice et de petite taille avec une ou deux cartes de circuit avec des interconnexions traversantes galvanisées
WO2023030789A1 (fr) * 2021-08-30 2023-03-09 Robert Bosch Gmbh Module électronique comprenant au moins un semi-conducteur de puissance et son procédé de production

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020134563A1 (de) 2020-12-22 2022-06-23 Danfoss Silicon Power Gmbh Leistungsmodul und Verfahren zur Herstellung eines Leistungsmoduls

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439427A1 (de) * 1960-05-18 1969-06-26 Siemens Ag Halbleiteranordnung und Verfahren zu deren Herstellung
BE794291A (fr) * 1972-01-22 1973-05-16 Siemens Ag Dispositif a semi-conducteurs regroupant plusieurs corps semi-conducteurs en forme de pastille
JPS56142645A (en) * 1980-04-07 1981-11-07 Hitachi Ltd Semiconductor device
JPS5787139A (en) * 1980-11-19 1982-05-31 Hitachi Ltd Semiconductor device
JPH07211731A (ja) * 1994-01-27 1995-08-11 Fuji Electric Co Ltd 半導体装置
CN1236982A (zh) 1998-01-22 1999-12-01 株式会社日立制作所 压力接触型半导体器件及其转换器
US20050111188A1 (en) 2003-11-26 2005-05-26 Anandaroop Bhattacharya Thermal management device for an integrated circuit
JP2006128262A (ja) * 2004-10-27 2006-05-18 Kyocera Corp 電子部品搭載用基板、電子装置および電子部品搭載用基板の製造方法
DE102006055340A1 (de) 2006-11-23 2008-05-29 Siemens Ag Explosionsfester Modulaufbau für Leistungsbauelemente, insbesondere Leistungshalbleiterbauelemente und dessen Herstellung
TWI339865B (en) * 2007-08-17 2011-04-01 Chipmos Technologies Inc A dice rearrangement package method
JP4958735B2 (ja) * 2007-11-01 2012-06-20 株式会社日立製作所 パワー半導体モジュールの製造方法、パワー半導体モジュールの製造装置、パワー半導体モジュール、及び接合方法
US20110024896A1 (en) * 2008-07-07 2011-02-03 Mitsubishi Electric Corporation Power semiconductor device
DE102009000514A1 (de) * 2009-01-30 2010-08-26 Robert Bosch Gmbh Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil
KR20130139011A (ko) * 2012-06-12 2013-12-20 한국전자통신연구원 Dbc 기판 및 전력 반도체 모듈
KR101963722B1 (ko) * 2012-12-28 2019-07-31 에스케이하이닉스 주식회사 반도체 패키지용 기판, 이를 이용한 반도체 패키지 및 그 제조방법
US9585241B2 (en) * 2013-09-24 2017-02-28 Infineon Technologies Ag Substrate, chip arrangement, and method for manufacturing the same
DE102013219733B4 (de) * 2013-09-30 2015-05-07 Siemens Aktiengesellschaft Verfahren zur Kantenbeschichtung eines monolithisch integrierten Halbleiterbauelementes
US9373559B2 (en) 2014-03-05 2016-06-21 International Business Machines Corporation Low-stress dual underfill packaging
DE102014105957B3 (de) * 2014-04-29 2015-06-25 Infineon Technologies Ag Verfahren zur Herstellung einer Lötverbindung
US9941234B2 (en) * 2015-05-28 2018-04-10 Ut-Battelle, Llc Integrated packaging of multiple double sided cooling planar bond power modules
DE102015210061A1 (de) * 2015-06-01 2016-12-01 Siemens Aktiengesellschaft Verfahren zur elektrischen Kontaktierung eines Bauteils und Bauteilmodul
DE102015214928A1 (de) * 2015-08-05 2017-02-09 Siemens Aktiengesellschaft Bauteilmodul und Leistungsmodul
DE102016218420A1 (de) * 2016-09-26 2018-03-29 Siemens Aktiengesellschaft Leistungsmodul

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020200721A1 (fr) * 2019-04-04 2020-10-08 Siemens Aktiengesellschaft Dispositif pour le refroidissement de composants électriques et/ou électroniques
EP3758061A1 (fr) * 2019-06-27 2020-12-30 SFI Electronics Technology Inc. Procédé d'emballage pour des composants semi-conducteurs à puce attachée unique de type matrice et de petite taille avec une ou deux cartes de circuit avec des interconnexions traversantes galvanisées
WO2023030789A1 (fr) * 2021-08-30 2023-03-09 Robert Bosch Gmbh Module électronique comprenant au moins un semi-conducteur de puissance et son procédé de production

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DE102017203132A1 (de) 2018-08-09

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