[go: up one dir, main page]

WO2018141621A2 - Power module - Google Patents

Power module Download PDF

Info

Publication number
WO2018141621A2
WO2018141621A2 PCT/EP2018/051816 EP2018051816W WO2018141621A2 WO 2018141621 A2 WO2018141621 A2 WO 2018141621A2 EP 2018051816 W EP2018051816 W EP 2018051816W WO 2018141621 A2 WO2018141621 A2 WO 2018141621A2
Authority
WO
WIPO (PCT)
Prior art keywords
power module
contact piece
electrical component
module according
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/051816
Other languages
German (de)
French (fr)
Other versions
WO2018141621A3 (en
Inventor
Michael Kaspar
Kai Kriegel
Stefan Stegmeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2018141621A2 publication Critical patent/WO2018141621A2/en
Publication of WO2018141621A3 publication Critical patent/WO2018141621A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D
    • H01L25/117—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26165—Alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29005—Structure
    • H01L2224/29006—Layer connector larger than the underlying bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29211—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29239—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29244—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29247—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29255—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29395—Base material with a principal constituent of the material being a gas not provided for in groups H01L2224/293 - H01L2224/29391
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32235—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/8314—Guiding structures outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H01L2224/83825—Solid-liquid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/839—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector with the layer connector not providing any mechanical bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909—Post-treatment of the layer connector or bonding area
    • H01L2224/8392—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area

Definitions

  • Power module The invention relates to a power module.
  • passive components such as resistors and semiconductor devices such as
  • IGBTs IGBTs, diodes, MOSFETs, LEDs and substrates such as FR4, DCB (direct copper bonded), AMB (active metal braze) and lead frames electrically connected by means of a construction and connection technology.
  • FR4 direct copper bonded
  • AMB active metal braze
  • connection techniques are known.
  • substrate-remote electrical contacts below ⁇ regularly have special requirements for the connection technology.
  • robust contacts with a long service life should be able to be realized, which, however, should be as inexpensive and manufacturable as possible.
  • the power module according to the invention has at least one electrical component with a contact surface.
  • the at least one elekt ⁇ generic component by means of at least processing module electrically contacts a contact surface on at least one contact piece of open-pore material of the performance and the at least one electrical component and are a contact piece at least, at least in directions of the flat extensions the at least one contact surface, relative to one another, and preferably also ⁇ relative to at least one further component of the power module, at least fixed in a form-fitting manner.
  • the optionally present at least one further component is a component, which is contacted electrically to the contact piece.
  • the power module according to the invention can be produced very simply, since the relative arrangement of electrical component and contact piece or, if appropriate, the relative arrangement tion of electrical component and contact piece with one or more other components of the power module by form-fitting fixing is extremely inexpensive.
  • a permanent, robust and reliable contacting of the electrical component and the contact piece with one another and possibly reliable electrical contacting of the electrical component and / or the contact piece with one or more further components of the power module can be achieved by means of the form-fitting attachment, ie by means of the positive locking - ses, make sure.
  • the power module according to the invention can consequently be implemented simply and reliably.
  • a robust and reliable operation is also advantageously ensured due to the positive connection, since an electrical contact, which is accomplished approximately by means of electroplating, not alone must bear the possibly occurring during operation mechanical load. In particular, such a load can result, for example, from a flow around the power component or from a flow around and / or throughflow of the contact piece with cooling fluid.
  • the "open pore” means for the purposes of this application, that pores of the material of the at least one contact piece form inlets to the surface thereof, can penetrate into the contact piece by wel ⁇ che from the outside, in particular fluid, such as a guided in a cooling passage cooling fluid.
  • fluid such as a guided in a cooling passage cooling fluid.
  • lock such a contact piece of the positive fit is particularly suitable because the contact piece is regularly used for particular flat electrical contacting.
  • the material of the at least one con ⁇ clock track on an open cell structure. In this way, by the contact piece in particular a cooling fluid or a cooling liquid are passed through and thus the at least one power component are efficiently cooled.
  • the power module according to the invention preferably has a substrate, wherein the substrate of the power module forms the electrical component of the power module.
  • the erfin ⁇ tion proper power module can be produced in this development of the invention is particularly inexpensive and robust, since the contact piece to the substrate by means of positive locking can be easily set and, in particular subsequently, simply electrically, preferably galvanically, ie by means of electroplating, can be contacted , According to the invention, a substrate-distant electrical contacting is thus possible with extremely little effort.
  • a power component forms the electrical component.
  • the power component is in electrical contact with a substrate of the power module by means of the contact piece, the substrate, contact piece and power module being respectively fixed relative to one another.
  • the at least one contact piece is formed with, in particular, a metal sponge and / or a metal foam and / or with a fabric-like and / or net-like structure.
  • the at least one contact piece with, in particular of, a ge ⁇ webeartigen and / or foam-like and / or net-like
  • the at least one contact piece is formed from or with metal, in particular copper and / or silver and / or nickel and / or gold and / or silver and / or tin.
  • the or at least one electrical component and / or at least one contact piece of both form-fitting and material-set according to the invention Leis ⁇ processing module.
  • the electrical component and / or the contact piece is preferably fixed by means of transfer molding or molding or by casting or injection molding or electroplating or by gluing or soldering.
  • the defined at least one electrical component and / or at least one contact piece by means of a frame according to the invention the power module having front ⁇ preferably in the direction of the sheet-like extensions of the contact surface of the electrical component by leading fürbre ⁇ cations.
  • the frame extends from a preferably present substrate as described above.
  • cooling fluid advantageously coolant, can be passed through the frame and consequently through the contact piece and / or along the contact piece and / or electrical component.
  • the inventive power module of the framework projections on which at least transversely, preferably ⁇ perpendicular, to the contact surface of at least one elekt ⁇ generic component extend.
  • the frame is formed by means of at least one part of a mold wafer.
  • the power module according to the invention particularly preferably has a cooling-flow path, which is designed to guide a cooling fluid along a cooling-flow direction.
  • the cooling flow direction extends at least along a direction of the planar extent of the contact surface of the at least one power component.
  • the cooling flow direction deviates by more than 30 degrees, suitably at most 15 degrees, preferably 5 degrees and IDE allay from more than 3 degrees from the plane of the planar extents of the contact surface of at least one Leis ⁇ processing component.
  • the cooling fluid flows in the novel power module to a certain extent tangentially on the contact area and / or along one flat side of at least one power component is so ⁇ that the efficiency of heat dissipation of the power device maximizes.
  • the cooling flow path passes through the contact piece.
  • the frame is preferably designed for mounting a rectangular contact piece and / or a rectangular power component.
  • the power module according to the invention has a guide means, in particular for linear and / or sliding guidance, by means of which the electrical component and / or the contact piece can be guided relative to one another in that relative position, in which contact piece and electrical component relative to one another are fixed.
  • a power component is in the inventive method for manufacturing a power module according to the invention as above described at least Hérange ⁇ coated with a contact surface.
  • the at least one power component and / or the at least one contact piece is or will, at least in
  • the power component is electrically contacted by means of at least one contact piece formed with open-pored material.
  • the contacting and setting can be carried out simultaneously or in any of the possible sequences in succession. The invention will be explained in more detail with reference to an embodiment shown in the drawing. It zei ⁇ gen:
  • FIG. 1 is a longitudinal sectional view of a first substrate of a first exemplary embodiment of a power module according to the invention and a frame of the power module connected thereto;
  • Figure 2 according to the first substrate with the frame of the first exemplary embodiment of the inventive power ⁇ module. 1 schematically in a plan view,
  • FIG. 1 and 2 open with power components and contact pieces
  • FIG. 4 shows the power module according to the invention in accordance with FIG. 3 with a second substrate schematically in longitudinal section
  • FIG. 5 shows a second embodiment of a erfindungsge ⁇ MAESSEN power module with a frame schematically in longitudinal section
  • Figure 5a shows the substrate of the second embodiment of the power module according to the invention.
  • 5 is a schematic plan view
  • FIG. 6 shows a frame with a power component of a third embodiment of an inventive
  • Power module schematically in a plan view, as well Figure 7 according to the third embodiment of the invention shown with the SEN power module attached to the side walls of a cooling passage of the power module of the invention frame with the power device.
  • Fig. 6 schematically in cross section.
  • the power module according to the invention comprises in a first exemplary embodiment, as shown in FIG. 1, a substrate 10 in a manner known per se.
  • the substrate 10 is formed as a flat part, which has two mutually parallel flat sides 20, 30, which each extend horizontally and perpendicular to the plane of the drawing.
  • the substrate 10 has a known manner
  • each of the contact surfaces ⁇ 50 is partially circumferentially surrounded by a frame 70 which is attached to the flat side 20 and continues extended perpendicularly from the flat side of the twentieth Basically, the frame 70 may be in other, not specifically shown in the drawing
  • Embodiments also extend from the contact surface 50.
  • frames 70 can also extend from the substrate 10 on the flat side 30 of the substrate 10 and / or on the contact surface 60.
  • the frame 70 consists, as shown in Fig. 2 each of four general vertical cylinders 80 (in the mathematical sense, ie vertical cylinder with not necessarily circular base) with L-shaped base, wherein the lateral surfaces of the vertical cylinder 80 perpendicular from the flat side 20th continue (for clarity, no contact surfaces are shown in Fig. 2).
  • general vertical cylinders 80 in the mathematical sense, ie vertical cylinder with not necessarily circular base
  • L-shaped base wherein the lateral surfaces of the vertical cylinder 80 perpendicular from the flat side 20th continue (for clarity, no contact surfaces are shown in Fig. 2).
  • the L-shaped bases are oriented and arranged relative to each other such that the legs of the L-shaped base cylinders 80 abut the exterior of such side portions of an imaginary rectangle as the corners of the imaginary rectangle. That is, a flat part with right ⁇ rectangular longitudinal cross-sectional area with its corners with the apexes of the cylinder 80 be brought into contact and thus a form-fitting fixed in the direction of the sheet-like extensions of the flat side 20 of the substrate 10, and thus in the directions of two-dimensional extensions of the contact surface 50th
  • the cylinders 80 form linear sliding guides for flat parts with rectangular cross-sectional area in the position in which the flat parts are fixed.
  • the cylinders 80 thus allow a particularly simple production according to the invention of the power module according to the invention.
  • the cylinder 80 of the frame 70 are molded in the embodiment shown ⁇ example, to the substrate 10.
  • the frame 70 may in principle also be formed with a different shape, for example, the frame 70, the contact surfaces 50 fully. be circumferentially formed surrounding and be designed to be permeable by means of passages for cooling liquid.
  • the frame may be integrally connected ⁇ 70 in other ways to the substrate 10 may be 3D-printed, for example, to the substrate 10 or glued or soldered or sintered, or simply firmly pressed ⁇ .
  • 3D method can be used in further in other embodiments, 3D method, and in particular SLS (Selective Laser Sintering) and / or SLA (StereoLitho ⁇ graphy) and / or polygraphy and / or Fused Deposition fashion ling (FDM) and / or 3DP (3D Printing) and / or vacuum casting and / or other methods.
  • power module according to the invention to power components 90, which in turn flat parts with flat sides 92 bil ⁇ .
  • the power components 90 have on these flat sides 92 electrical surface contacts 95 for electrical contacting.
  • the power components 90 also have rectangular
  • the power components 90 are spaced from the contact surfaces 50 on the substrate 10 and from the substrate 10 itself and electrically conductively ⁇ connected by means of electrically conductive ⁇ the contact pieces 100 with a rectangular longitudinal sectional area of the contact surfaces 50 or other components of the inventions ⁇ inventive power module.
  • the contact pieces 100 are also introduced with their rectangular longitudinal sectional area in the frame 70.
  • power module of the ⁇ art to the invention is manufactured such that the first contact pieces 100 are introduced to Gas- respectively in a frame 70 in the direction of the substrate 10 and are guided by means of the cylinder 80 toward the flat side 20 of the substrate to be slidably and in Directions of the planar extensions of the flat side 20 and thus in the direction of the planar extensions of the contact surfaces 50 are fixed and subsequently electrically contacted, for example by means of electroplating to the contact surfaces 50 of the substrate 10.
  • power components 90 are in the direction of the sub ⁇ strat to 10 and introduced in some of the frame 70 to be guided by the cylinder 80 to the substrate 10 is also placed in the direction of the fixed planar extents of the flat side of the twentieth
  • the power device 90 is in turn in electrical contact with the con tact ⁇ piece 100 by means of electroplating.
  • contact piece 100 and power component 90 and substrate 10 can be electrically contacted in a further embodiment of he ⁇ inventive method in a single operation by means of electroplating.
  • the power components 90 are bipolar transistors with iso ⁇ profiled gate electrode (English: “Insulated-Gate Bipolar Transistor” IGBT) and each have flat sides 92 having opposing to Along the flat sides 92 to thin film-like surface contacts 95 extend the power components 90, which as a flat Chipmetallmaschineen. are formed.
  • the FLAE ⁇ chenterne 95 of the power components 90 each made of copper.
  • 95 In principle surface contacts also all or part of or silver, or from or with AlSiCu, sons ⁇ term metals or other electrically conductive materials may be formed.
  • the contact pieces 100 are each made of open-pore and open-cell material, and realized as an electrically conductive copper sponges.
  • the contact pieces 100 ⁇ with cooling fluid, for example cooling liquid or it is understood that in other, not specifically illustrated embodiments, which otherwise correspond to the embodiments explained with reference to FIGS, the open-pore contact pieces 100 also may consist of other open-pore and electrically conductive materials, such as aluminum or titanium contacts formed from fabrics or nets or other porous structures or formed from or with other metals contacts. For example, with conductive Ma ⁇ terialien partially coated with conductive particles or staggered polymer sponges as contact pieces 100 are used.
  • the contact pieces 100 are connected in the illustratedssensbei ⁇ game galvanically and in the manufacture of the inventive ⁇ SEN power module using an electrolytic bath of surface contacts 95 of the power components 90 and to the electrical contact areas 50 of the substrate 10 degrees. It is galvanically copper on the contact surface of contact ⁇ pieces 100 and contact surfaces 50 of the substrate 10 or FLAE ⁇ chenANDen further components of the power module of the invention and the contact pieces 100 and the surfaces ⁇ contacts 95 of the power components 90 is deposited so that the contact pieces 100 each cohesively and electrically are conductively connected to the contact surfaces 50 of the substrate 10 and / or further components of the power module according to the invention and / or the surface contacts 95 of the power components 90 ⁇ . All contact pieces 100 are connected to the respective surface contacts 95 and / or contact surfaces 50 against which they respectively rest.
  • the contact pieces 100 are not galvanically connected ⁇ , but connected by means of sintering or brazing or diffusion soldering or pressing or clamping or gluing.
  • the frames 70 may be as shown in FIG. 4 and spaced above each other.
  • adjacent frames 70 can also be connected to one another in a material-locking manner, for example in one piece or with be formed one-piece cylinders, which each belong to adjacent frames at the same time.
  • a single straight cylinder 115 may be present instead of two adjacent L-shaped straight cylinders associated with adjacent frames 70.
  • This single straight cylinder has a base of T-shape, with the central web 116 of the T-shape being widened with respect to the beam 118 of the T-shape.
  • the widening of the centra ⁇ len web 116 can view a certain extent as a filled intermediate space between two L-shaped cylinders.
  • the contact pieces are not necessarily 100 ar ⁇ retiert in frame 70.
  • the power components 90 are surrounded by a full-frame frame plate 300, which defines the power components 90 at least in a form-fitting manner.
  • the power components 90 are also materially connected to the frame plate, in the illustrated case the power component 90 is cast into the frame plate 300, i. the power component is at least partially embedded in the frame plate 300 such that the frame plate overlaps the power component 90 in the direction perpendicular to its flat sides.
  • the frame plates 300 are in this case formed in such a way that the power components 90 separated from a wafer are cast into a mold wafer 302 in a manner known per se, from which the power components 90 then each together with a protruding frame, which forms the frame plate 300, from the mold wafer 302 are cut out.
  • these frame flakes 300 are embedded in side walls 305 of a housing of the power module according to the invention, for example cast in, as shown in FIG. Since the frame plate 300, the power component 90 in its thickness direction, that is perpendicular to its flat Overlaps pages 92, the two flat sides are reliably electrically isolated by means of the frame plate 300.
  • the frame plate 300 to different Po ⁇ tentialen with which the power device 90 is in contact conductive Wegschlägstest sufficiently, so that an additional insulation to ⁇ is basically unnecessary.
  • the power component 90 can also be enclosed, for example, in frame plates such that the
  • Frame plates are formed from two half-shells, in which the power device 90 is inserted and preferably Festge ⁇ sticks.
  • the components of the power module according to the invention shown in the drawing are assembled by means of a per se be ⁇ known mounting process to a power module according to the invention:
  • the components of the beaumo ⁇ module comprise on the one hand the housing with (with respect to Figures 1 to 5) parallel to the plane extending side walls 305 (the embodiment according to Fig. 7 is shown in cross-section, ie the side walls 305 can be seen explicitly in cross-section here). Between these side walls 305, on the one hand, the substrate 10 and a further substrate 310 are arranged.
  • the further substrate 310 is formed the same ⁇ like the substrate 10 and forms a flat portion with two opposite flat sides 320, 330 which are parallel to the flat sides 20, 30 of the substrate 10 orien ⁇ advantage.
  • the flat sides 320, 330 likewise carry electrically conductive contact surfaces 350 by means of metal-filled plated-through holes.
  • the substrates 10, 310 delimit a cooling channel 360 of the power module for a cooling fluid of a cooling circuit of the power module.
  • the contact pieces which can be filled in between the side walls 305 befindli ⁇ chen gap in the whole width 100 which Power components 90 are positively locked by means of the frame plate 300 relative to the contact pieces 100, currency ⁇ ing in the embodiment according to. Fig. 1 to 5, the Needlesstü ⁇ bridge 100 are enclosed together with the power components 90 in frame 70.
  • the two execution ⁇ examples can be com ⁇ bined in a single power module.
  • Fig. 7 also in the vertical direction one or more times be repeated by the substrate 310 in turn takes the place of the substrate 10. In this way, a series ⁇ circuit of power components 90 can be realized.
  • the contact pieces 100 Due to the open-cell and open-pored structure of the contact pieces 100 and the Druchbrechungen the frame 70, the contact pieces 100 can be flowed through with cooling liquid.
  • cooling liquid cooling water and contact pieces 100 are suitably electrically isolated, for example by means of plastic, which is passed through Dis ⁇ penskanäle through the substrates 10, 310 therethrough to the contact pieces 100 (not shown in the drawing) ,
  • the power components 90 are now located directly in the cooling channel 360.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to a power module comprising at least one electric component having a contact surface, wherein the electric component is electrically contacted by means of the contact surface on at least one contact piece, formed from an open-pore material, of the power module and the at least one electric component and the at least one contact piece are fixed relative to each other at least in a positive fit, at least in directions of the flat extensions of the at least one contact surface.

Description

Beschreibung description

Leistungsmodul Die Erfindung betrifft ein Leistungsmodul. Power module The invention relates to a power module.

In der Leistungselektronik werden passive Bauteile wie etwa Widerstände sowie Halbleiterbauteile wie beispielsweise In power electronics are passive components such as resistors and semiconductor devices such as

IGBTs, Dioden, MOSFETS, LEDs und Substrate wie etwa FR4, DCB(Direct copper bonded) , AMB (Active metal braze) und Lead- frames elektrisch mittels einer Aufbau- und Verbindungstechnik miteinander verbunden. IGBTs, diodes, MOSFETs, LEDs and substrates such as FR4, DCB (direct copper bonded), AMB (active metal braze) and lead frames electrically connected by means of a construction and connection technology.

Hierzu sind eine Vielzahl von Verbindungstechniken bekannt. Insbesondere substratferne elektrische Kontaktierungen unter¬ liegen regelmäßig besonderen Anforderungen an die Verbindungstechnik. Je nach Einsatzzweck sollen robuste Kontaktierungen mit hoher Lebensdauer realisierbar sein, welche allerdings möglichst unaufwändig und kostengünstig fertigbar sein sollen. For this purpose, a variety of connection techniques are known. In particular, substrate-remote electrical contacts below ¬ regularly have special requirements for the connection technology. Depending on the intended use, robust contacts with a long service life should be able to be realized, which, however, should be as inexpensive and manufacturable as possible.

Ferner bedingen insbesondere in der Leistungselektronik das Schalten und das Leiten von Strömen in Halbleiterbauelementen, insbesondere IGBTs, Dioden, MOSFETs etc., Ver- lustleistungen . Solche Verlustleistungen müssen von einemFurthermore, in particular in power electronics, the switching and the conduction of currents in semiconductor components, in particular IGBTs, diodes, MOSFETs, etc., cause power losses. Such losses must be of one

Kühler aufgenommen werden, so dass sich solche Halbleiterbauelemente nicht zu stark erhitzen und ein effizienter Betrieb sichergestellt ist. Es ist bekannt, Leistungsbauelemente un¬ terseitig durch lunkerfreies Löten, Diffusionslöten oder Sin- tern auf ein Substrat (DCB, AMB etc.) aufzubringen, wobei das Substrat seinerseits flächig an einen Kühler angebunden ist. Häufig ist die Kühlung dabei jedoch nicht effizient. Die da¬ raus resultierende Erhitzung solcher Leistungsbauelemente hat regelmäßig eine erhöhte Ausfallrate der Leistungsbauelemente sowie ein frühzeitiges Versagen von Isolationsmaterial infol¬ ge thermischer Degradation zur Folge. Oberseitig ist eine Kühlung von Leistungsbauelementen häufig besonders schwierig, da aufgrund der oft eingesetzten Drahtbond- oder Bändchenbond-Technologie zur elektrischen Isolation ein Mate¬ rial vergossen wird, welches eine thermische Energieabfuhr behindert . Vor diesem Hintergrund ist es daher Aufgabe der Erfindung, ein Leistungsmodul bereitzustellen, bei dem einerseits eine elektrische Kontaktierung und damit die Fertigung des Leis¬ tungsmoduls robust und unaufwändig möglich sind. Ferner soll eine Kühlung von Bauelementen auf verbesserte Weise möglich sein. Zudem soll ein Verfahren zur Herstellung eines solchen Leistungsmoduls angegeben werden. Be included cooler, so that such semiconductor devices do not overheat and efficient operation is ensured. It is known, power devices un ¬ terseitig through cavity free soldering, diffusion soldering or sintering tern on a substrate (DCB, AMB etc.) apply, wherein the substrate is in turn connected to surface a cooler. However, cooling is often not efficient. The da ¬ out resulting heating of such power devices has regularly increased failure rate of the power devices and premature failure of insulation material infol ¬ ge thermal degradation result. On the upper side, cooling of power devices is often particularly difficult because of the often used Drahtbond- or Bändchenbond technology for electrical insulation a Mate ¬ material is shed, which hinders thermal energy dissipation. Against this background, it is therefore an object of the invention to provide a power module in which on the one hand an electrical contact and thus the production of the Leis ¬ processing module are rugged and uncomplicated possible. Furthermore, a cooling of components should be possible in an improved manner. In addition, a method for producing such a power module is to be specified.

Diese Aufgabe der Erfindung wird mit einem Leistungsmodul mit den in Anspruch 1 angegebenen Merkmalen sowie mit einem Ver- fahren mit den in Anspruch 12 angegebenen Merkmalen gelöst.This object of the invention is achieved with a power module having the features specified in claim 1 and with a method having the features specified in claim 12.

Bevorzugte Weiterbildungen der Erfindung ergeben sich aus den zugehörigen Unteransprüchen, der nachfolgenden Beschreibung und der Zeichnung. Das erfindungsgemäße Leistungsmodul weist mindestens ein elektrisches Bauteil mit einer Kontaktfläche auf. Bei dem er¬ findungsgemäßen Leistungsmodul ist das zumindest eine elekt¬ rische Bauteil mittels der zumindest einen Kontaktfläche an mindestens ein Kontaktstück offenporigen Materials des Leis- tungsmoduls elektrisch kontaktiert und das zumindest eine elektrische Bauteil und das zumindest eine Kontaktstück sind, zumindest in Richtungen der flächigen Erstreckungen der mindestens einen Kontaktfläche, relativ zueinander, und vorzugs¬ weise zudem relativ zu mindestens einem weiteren Bauteil des Leistungsmoduls, zumindest formschlüssig festgelegt. D.h. ei¬ ne relative Bewegung von elektrischem Bauteil und Kontakt¬ stück ist in Richtung der flächigen Erstreckungen der Kontaktfläche mittels Formschlusses verhindert. Bevorzugt ist das ggf. vorhandene zumindest eine weitere Bauteil ein Bau- teil, welches elektrisch an das Kontaktstück kontaktiert ist. Das erfindungsgemäße Leistungsmodul lässt sich zum einen sehr einfach herstellen, da die relative Anordnung von elektrischem Bauteil und Kontaktstück oder ggf. die relative Anord- nung von elektrischem Bauteil und Kontaktstück mit einem oder mehreren weiteren Bauteilen des Leistungsmoduls durch formschlüssige Festlegung äußerst unaufwändig ist. Insbesondere lässt sich eine dauerhafte, robuste und zuverlässige Kontak- tierung von elektrischem Bauteil und Kontaktstück miteinander sowie ggf. eine zuverlässige elektrische Kontaktierung des elektrischen Bauteils und/oder des Kontaktstücks mit einem oder mehreren weiteren Bauteilen des Leistungsmoduls mittels der formschlüssigen Festlegung, d.h. mittels des Formschlus- ses, sicherstellen. Das erfindungsgemäße Leistungsmodul lässt sich folglich einfach und zuverlässig realisieren. Vorteilhaft ist aufgrund des Formschlusses zudem ein robuster und zuverlässiger Betrieb sichergestellt, da eine elektrische Kontaktierung, die etwa mittels Galvanisierens bewerkstelligt ist, nicht allein die möglicherweise während des Betriebes auftretende mechanische Last tragen muss. Insbesondere kann eine solche Last etwa aus einer Umströmung des Leistungsbau¬ teils oder einer Umströmung und/oder Durchströmung des Kontaktstücks mit Kühlfluid resultieren. Preferred embodiments of the invention will become apparent from the accompanying dependent claims, the following description and the drawings. The power module according to the invention has at least one electrical component with a contact surface. In the he ¬ inventive power module, the at least one elekt ¬ generic component by means of at least processing module electrically contacts a contact surface on at least one contact piece of open-pore material of the performance and the at least one electrical component and are a contact piece at least, at least in directions of the flat extensions the at least one contact surface, relative to one another, and preferably also ¬ relative to at least one further component of the power module, at least fixed in a form-fitting manner. Ie ei ¬ ne relative movement of the electrical component and contact ¬ piece of the contact surface is prevented by form-locking in the direction of the sheet-like extensions. Preferably, the optionally present at least one further component is a component, which is contacted electrically to the contact piece. On the one hand, the power module according to the invention can be produced very simply, since the relative arrangement of electrical component and contact piece or, if appropriate, the relative arrangement tion of electrical component and contact piece with one or more other components of the power module by form-fitting fixing is extremely inexpensive. In particular, a permanent, robust and reliable contacting of the electrical component and the contact piece with one another and possibly reliable electrical contacting of the electrical component and / or the contact piece with one or more further components of the power module can be achieved by means of the form-fitting attachment, ie by means of the positive locking - ses, make sure. The power module according to the invention can consequently be implemented simply and reliably. A robust and reliable operation is also advantageously ensured due to the positive connection, since an electrical contact, which is accomplished approximately by means of electroplating, not alone must bear the possibly occurring during operation mechanical load. In particular, such a load can result, for example, from a flow around the power component or from a flow around and / or throughflow of the contact piece with cooling fluid.

Zweckmäßig ist unter „offenporig" im Sinne dieser Anmeldung zu verstehen, dass Poren des Materials des zumindest einen Kontaktstücks an deren Oberfläche Einlässe bilden, durch wel¬ che von außen insbesondere Fluid, etwa ein in einem Kühlkanal geführtes Kühlfluid, ins Kontaktstück eindringen kann. Gerade zur Arretierung eines solchen Kontaktstücks ist der Form- schluss besonders geeignet, da das Kontaktstück regelmäßig zur insbesondere flächigen elektrischen Kontaktierung eingesetzt wird. Suitably, the "open pore" means for the purposes of this application, that pores of the material of the at least one contact piece form inlets to the surface thereof, can penetrate into the contact piece by wel ¬ che from the outside, in particular fluid, such as a guided in a cooling passage cooling fluid. Especially to lock such a contact piece of the positive fit is particularly suitable because the contact piece is regularly used for particular flat electrical contacting.

Zweckmäßigerweise ist bei dem erfindungsgemäßen Leistungsmo¬ dul das erfindungsgemäß vorgesehene offenporige Material des zumindest einen Kontaktstücks zur Leitung von Kühlfluid, ins¬ besondere Kühlflüssigkeit, durch seine Poren besonders geeig- net. Insbesondere weist das Material des zumindest einen Kon¬ taktstücks eine offenzellige Struktur auf. Auf diese Weise kann durch das Kontaktstück insbesondere ein Kühlfluid oder eine Kühlflüssigkeit hindurch geleitet werden und somit das zumindest eine Leistungsbauteil effizient entwärmt werden. Conveniently Leistungsmo ¬ dul the inventively provided open-pored material at least particularly suited to the special ¬ cooling liquid through its pores of the one contact piece for conducting cooling fluid according to the invention. In particular, the material of the at least one con ¬ clock track on an open cell structure. In this way, by the contact piece in particular a cooling fluid or a cooling liquid are passed through and thus the at least one power component are efficiently cooled.

Vorzugsweise weist das erfindungsgemäße Leistungsmodul ein Substrat auf, wobei das Substrat des Leistungsmoduls das elektrische Bauteil des Leistungsmoduls bildet. Das erfin¬ dungsgemäße Leistungsmodul lässt sich in dieser Weiterbildung der Erfindung besonders unaufwändig und robust herstellen, da das Kontaktstück an das Substrat mittels Formschlusses ein- fach festgelegt werden kann und, insbesondere anschließend, einfach elektrisch, vorzugsweise galvanisch, d.h. mittels Galvanisierens, kontaktiert werden kann. Erfindungsgemäß ist somit auch eine substratferne elektrische Kontaktierung mit äußerst geringem Aufwand möglich. The power module according to the invention preferably has a substrate, wherein the substrate of the power module forms the electrical component of the power module. The erfin ¬ tion proper power module can be produced in this development of the invention is particularly inexpensive and robust, since the contact piece to the substrate by means of positive locking can be easily set and, in particular subsequently, simply electrically, preferably galvanically, ie by means of electroplating, can be contacted , According to the invention, a substrate-distant electrical contacting is thus possible with extremely little effort.

Alternativ oder zusätzlich und ebenfalls bevorzugt bildet ein Leistungsbauteil das elektrische Bauteil. Idealerweise steht bei dem erfindungsgemäßen Leistungsmodul das Leistungsbauteil mittels des Kontaktstücks mit einem Substrat des Leistungsmo- duls in elektrischem Kontakt, wobei Substrat, Kontaktstück und Leistungsmodul jeweils relativ zueinander festgelegt sind . Alternatively or additionally and also preferably, a power component forms the electrical component. Ideally, in the case of the power module according to the invention, the power component is in electrical contact with a substrate of the power module by means of the contact piece, the substrate, contact piece and power module being respectively fixed relative to one another.

In einer vorteilhaften Weiterbildung des erfindungsgemäßen Leistungsmoduls ist das mindestens eine Kontaktstück mit, insbesondere aus, einem Metallschwamm und/oder einem Metallschaum und/oder mit einer gewebeartigen und/oder netzartigen Struktur gebildet. In an advantageous development of the power module according to the invention, the at least one contact piece is formed with, in particular, a metal sponge and / or a metal foam and / or with a fabric-like and / or net-like structure.

Vorzugsweise ist bei dem erfindungsgemäßen Leistungsmodul das mindestens eine Kontaktstück mit, insbesondere aus, einer ge¬ webeartigen und/oder schaumartigen und/oder netzartigen Preferably, in the power module according to the invention the at least one contact piece with, in particular of, a ge ¬ webeartigen and / or foam-like and / or net-like

Struktur, insbesondere einer als Metallnetz gebildeten Struktur, gebildet. In dieser Weiterbildung lässt sich die Offen- porigkeit von erstem und/oder zweiten Kontaktstück leicht ge- währleisten. Geeigneterweise ist das zumindest eine Kontaktstück aus oder mit Metall, insbesondere Kupfer und/oder Silber und/oder Nickel und/oder Gold und/oder Silber und/oder Zinn, gebildet. Vorzugsweise ist oder sind bei dem erfindungsgemäßen Leis¬ tungsmodul das zumindest eine elektrische Bauteil und/oder zumindest eine Kontaktstück sowohl formschlüssig als auch stoffschlüssig festgelegt. Stoffschlüssig ist das elektrische Bauteil und/oder das Kontaktstück vorzugsweise mittels Um- oder Anspritzens oder mittels Gießens oder Spritzgießens oder Galvanisierens oder mittels Klebens oder Lötens festgelegt. Structure, in particular a structure formed as a metal net formed. In this development, the open porosity of the first and / or second contact piece can be easily ensured. Suitably, the at least one contact piece is formed from or with metal, in particular copper and / or silver and / or nickel and / or gold and / or silver and / or tin. Preferably, the or at least one electrical component and / or at least one contact piece of both form-fitting and material-set according to the invention Leis ¬ processing module. Cohesively, the electrical component and / or the contact piece is preferably fixed by means of transfer molding or molding or by casting or injection molding or electroplating or by gluing or soldering.

Bevorzugt ist bei dem erfindungsgemäßen Leistungsmodul das zumindest eine elektrische Bauteil und/oder zumindest eine Kontaktstück mittels eines Rahmens festgelegt, welcher vor¬ zugsweise in Richtung der flächigen Erstreckungen der Kontaktfläche des elektrischen Bauteils durchführende Durchbre¬ chungen aufweist. Alternativ oder zusätzlich und ebenfalls bevorzugt streckt sich der Rahmen von einem wie oben be- schreiben bevorzugt vorhandenen Substrat fort. Insbesondere kann mittels der Durchbrechungen des Rahmens Kühlfluid, zweckmäßig Kühlflüssigkeit, durch den Rahmen und folglich durch das Kontaktstück hindurch und/oder an Kontaktstück und/oder elektrischem Bauteil entlang geführt werden. Preferably, the defined at least one electrical component and / or at least one contact piece by means of a frame according to the invention the power module having front ¬ preferably in the direction of the sheet-like extensions of the contact surface of the electrical component by leading Durchbre ¬ cations. Alternatively or additionally, and also preferably, the frame extends from a preferably present substrate as described above. In particular, by means of the openings of the frame, cooling fluid, advantageously coolant, can be passed through the frame and consequently through the contact piece and / or along the contact piece and / or electrical component.

Zweckmäßig weist bei dem erfindungsgemäßen Leistungsmodul der Rahmen Vorsprünge auf, welche sich zumindest quer, vorzugs¬ weise senkrecht, zur Kontaktfläche des zumindest einen elekt¬ rischen Bauteils, erstrecken. Suitably, in the inventive power module of the framework projections on which at least transversely, preferably ¬ perpendicular, to the contact surface of at least one elekt ¬ generic component extend.

In einer bevorzugten Weiterbildung des erfindungsgemäßen Leistungsmoduls ist der Rahmen mittels zumindest eines Teils eines Moldwafers gebildet. Besonders bevorzugt weist das erfindungsgemäße Leistungsmodul einen Kühlstrompfad auf, der zur Führung eines Kühlfluids entlang einer Kühlstromrichtung ausgebildet ist. In a preferred development of the power module according to the invention, the frame is formed by means of at least one part of a mold wafer. The power module according to the invention particularly preferably has a cooling-flow path, which is designed to guide a cooling fluid along a cooling-flow direction.

Geeigneterweise erstreckt sich die Kühlstromrichtung zumin- dest entlang einer Richtung der flächigen Erstreckung der Kontaktfläche des mindestens einen Leistungsbauteils. Suitably, the cooling flow direction extends at least along a direction of the planar extent of the contact surface of the at least one power component.

Geeigneterweise weicht die Kühlstromrichtung um höchstens 30 Grad, zweckmäßig höchstens 15 Grad, bevorzugt 5 Grad und ide- alerweise höchstens um 3 Grad von der Ebene der flächigen Erstreckungen der KOntaktfläche des zumindest einen Leis¬ tungsbauteils ab. In dieser Weiterbildung der Erfindung strömt das Kühlfluid beim erfindungsgemäßen Leistungsmodul gewissermaßen tangential an der Kontaktfläche und/oder einer Flachseite des zumindest einen Leistungsbauteils entlang, so¬ dass die Effizienz der Entwärmung des Leistungsbauteils maxi- miert ist. Geeigneterweise führt der Kühlstrompfad durch das Kontaktstück hindurch. Vorzugsweise ist bei dem erfindungsgemäßen Leistungsmodul der Rahmen zur Fassung eines rechteckigen Kontaktstücks und/oder eines rechteckigen Leistungsbauteils ausgebildet. Suitably, the cooling flow direction deviates by more than 30 degrees, suitably at most 15 degrees, preferably 5 degrees and IDE alerweise from more than 3 degrees from the plane of the planar extents of the contact surface of at least one Leis ¬ processing component. In this embodiment of the invention, the cooling fluid flows in the novel power module to a certain extent tangentially on the contact area and / or along one flat side of at least one power component is so ¬ that the efficiency of heat dissipation of the power device maximizes. Suitably, the cooling flow path passes through the contact piece. In the case of the power module according to the invention, the frame is preferably designed for mounting a rectangular contact piece and / or a rectangular power component.

Besonders zweckmäßig weist das erfindungsgemäße Leistungsmo- dul ein Führungsmittel, insbesondere zur Linear- und/oder Gleitführung, auf, mittels welchem das elektrische Bauteil und/oder das Kontaktstück in diejenige relative Stellung zueinander führbar ist oder sind, in welcher Kontaktstück und elektrisches Bauteil relativ zueinander festgelegt sind. Particularly expediently, the power module according to the invention has a guide means, in particular for linear and / or sliding guidance, by means of which the electrical component and / or the contact piece can be guided relative to one another in that relative position, in which contact piece and electrical component relative to one another are fixed.

Bei dem erfindungsgemäßen Verfahren zur Herstellung eines erfindungsgemäßen Leistungsmoduls wie oben beschrieben wird zumindest ein Leistungsbauteil mit einer Kontaktfläche herange¬ zogen. Das zumindest eine Leistungsbauteil und/oder das zu- mindest eine Kontaktstück wird oder werden, zumindest inA power component is in the inventive method for manufacturing a power module according to the invention as above described at least Hérange ¬ coated with a contact surface. The at least one power component and / or the at least one contact piece is or will, at least in

Richtungen der flächigen Erstreckungen der mindestens einen Kontaktfläche, mittels einer Arretiervorrichtung, insbesonde¬ re mittels eines Rahmens, relativ zueinander oder gegenüber mindestens einem weiteren Bauteil des Leistungsmoduls zumin- dest formschlüssig, vorzugsweise mittels eines Führungsmit¬ tels, festgelegt. Bei dem erfindungsgemäßen Verfahren wird das Leistungsbauteil mittels mindestens eines mit offenpori¬ gem Material gebildeten Kontaktstücks elektrisch kontaktiert. Das Kontaktieren und das Festlegen können im Sinne dieser Erfindung gleichzeitig oder in jeder der möglichen Reihenfolgen aufeinanderfolgend durchgeführt werden. Nachfolgend wird die Erfindung anhand eines in der Zeichnung dargestellten Ausführungsbeispiels näher erläutert. Es zei¬ gen : Directions of the planar extensions of at least one contact surface, by means of a locking device, insbesonde ¬ re by means of a frame, relative to each other or against at least one other component of the power module at least form-fitting, preferably by means of a Führungsmit ¬ set. In the method according to the invention, the power component is electrically contacted by means of at least one contact piece formed with open-pored material. For the purposes of this invention, the contacting and setting can be carried out simultaneously or in any of the possible sequences in succession. The invention will be explained in more detail with reference to an embodiment shown in the drawing. It zei ¬ gen:

Figur 1 ein erstes Substrat eines ersten Ausführungsbei- spiels eines erfindungsgemäßen Leistungsmoduls und einen daran angebundenen Rahmen des Leistungsmoduls schematisch im Längsschnitt, FIG. 1 is a longitudinal sectional view of a first substrate of a first exemplary embodiment of a power module according to the invention and a frame of the power module connected thereto;

Figur 2 das erste Substrat mit dem Rahmen des ersten Aus- führungsbeispiels des erfindungsgemäßen Leistungs¬ moduls gem. Fig. 1 schematisch in einer Draufsicht, Figure 2 according to the first substrate with the frame of the first exemplary embodiment of the inventive power ¬ module. 1 schematically in a plan view,

Figur 3 das erfindungsgemäße Leistungsmodul mit dem Sub¬ strat und mit dem Rahmen gem. Fig. 1 und 2 mit Leistungsbauteilen und Kontaktstücken offenporigenFigure 3 according to the power module according to the invention with the sub strate ¬ and to the frame. Fig. 1 and 2 open with power components and contact pieces

Materials schematisch im Längsschnitt, Material schematic in longitudinal section,

Figur 4 das erfindungsgemäße Leistungsmodul gem. Fig. 3 mit einem zweiten Substrat schematisch im Längsschnitt, FIG. 4 shows the power module according to the invention in accordance with FIG. 3 with a second substrate schematically in longitudinal section,

Figur 5 ein zweites Ausführungsbeispiel eines erfindungsge¬ mäßen Leistungsmoduls mit einem Rahmen schematisch im Längsschnitt, Figur 5a das Substrat des zweiten Ausführungseispiels des erfindungsgemäßen Leistungsmoduls gem. Fig. 5 schematisch in einer Draufsicht, 5 shows a second embodiment of a erfindungsge ¬ MAESSEN power module with a frame schematically in longitudinal section, Figure 5a shows the substrate of the second embodiment of the power module according to the invention. 5 is a schematic plan view,

Figur 6 einen Rahmen mit einem Leistungsbauteil eines drit- ten Ausführungsbeispiels eines erfindungsgemäßen6 shows a frame with a power component of a third embodiment of an inventive

Leistungsmoduls schematisch in einer Draufsicht, sowie Figur 7 das dritte Ausführungsbeispiel des erfindungsgemä¬ ßen Leistungsmoduls mit dem an Seitenwände eines Kühlkanals des erfindungsgemäßen Leistungsmoduls angebunden Rahmen mit dem Leistungsbauteil gem. Fig. 6 schematisch im Querschnitt. Power module schematically in a plan view, as well Figure 7 according to the third embodiment of the invention shown with the SEN power module attached to the side walls of a cooling passage of the power module of the invention frame with the power device. Fig. 6 schematically in cross section.

Das erfindungsgemäße Leistungsmodul umfasst in einem ersten Ausführungsbeispiel zunächst wie in Fig. 1 dargestellt in an sich bekannter Weise ein Substrat 10. The power module according to the invention comprises in a first exemplary embodiment, as shown in FIG. 1, a substrate 10 in a manner known per se.

Das Substrat 10 ist als Flachteil ausgebildet, welches zwei zueinander parallele Flachseiten 20, 30 aufweist, die sich jeweils horizontal und senkrecht zur Zeichenebene erstrecken. Das Substrat 10 weist in an sich bekannter Weise The substrate 10 is formed as a flat part, which has two mutually parallel flat sides 20, 30, which each extend horizontally and perpendicular to the plane of the drawing. The substrate 10 has a known manner

Durchkontaktierungen 40 in Gestalt von metallgefüllten Vias auf, welche einander abgewandte Kontaktflächen 50, 60 an den Flachseiten 20, 30 des Substrats 10 miteinander leitend ver¬ binden . Through holes 40 in the form of metal-filled vias on which facing away contact surfaces 50, 60 on the flat sides 20, 30 of the substrate 10 together ver ¬ bind.

An einer Flachseite 20 des Substrats 10 ist jede der Kontakt¬ flächen 50 teilumfänglich von einem Rahmen 70 umgeben, der an der Flachseite 20 angebunden ist und sich senkrecht von der Flachseite 20 fortstreckt. Grundsätzlich kann sich der Rahmen 70 in weiteren, nicht eigens in der Zeichnung dargestelltenOn a flat side 20 of the substrate 10, each of the contact surfaces ¬ 50 is partially circumferentially surrounded by a frame 70 which is attached to the flat side 20 and continues extended perpendicularly from the flat side of the twentieth Basically, the frame 70 may be in other, not specifically shown in the drawing

Ausführungsbeispielen auch von der Kontaktfläche 50 fortstrecken. In weiteren, nicht eigens abgebildeten Ausführungsbeispielen können sich Rahmen 70 auch an der Flachseite 30 vom Substrat 10 und/oder an der Kontaktfläche 60 vom Substrat 10 fortstrecken. Embodiments also extend from the contact surface 50. In further exemplary embodiments, which are not specifically illustrated, frames 70 can also extend from the substrate 10 on the flat side 30 of the substrate 10 and / or on the contact surface 60.

Mittels dieser Rahmen 70 sind Leistungsbauteile (siehe weite¬ re Beschreibung dieses Ausführungsbeispiels) relativ zu den Kontaktflächen 50 in den Richtungen der flächigen By means of these frames 70 are power components (see further description of this embodiment ¬ re ¬ ) relative to the contact surfaces 50 in the directions of the flat

Erstreckungen der Kontaktflächen 50 (und somit - gleichbedeutend - den flächigen Erstreckungen der Flachseite 20) des Substrats 10 festlegbar. Dazu sind die Leistungsbauteile in Richtung der flächigen Erstreckungen der Flachseiten 20, 30 von Kühlfluid, im hier gezeigten Ausführungsbeispiel von Kühlflüssigkeit, umströmbar angeordnet. Zur Umströmung mit Kühlflüssigkeit wird mittels des Substrats 10 und weiterer Bestandteile des erfindungsgemäßen Leistungsmoduls ein Kühl- kanal gebildet, wie in der weiteren Beschreibung des Ausführungsbeispiels erläutert werden wird. Distances of the contact surfaces 50 (and thus - synonymous - the planar extensions of the flat side 20) of the substrate 10 can be fixed. For this purpose, the power components in the direction of the planar extensions of the flat sides 20, 30th of cooling fluid, arranged in the embodiment shown here of cooling liquid, flow around. For circulating with coolant, a cooling channel is formed by means of the substrate 10 and further components of the power module according to the invention, as will be explained in the further description of the exemplary embodiment.

Der Rahmen 70 besteht wie in Fig. 2 dargestellt jeweils aus vier allgemeinen senkrechten Zylindern 80 (im mathematischen Sinne, d.h. senkrechte Zylinder mit nicht notwendigerweise kreisförmiger Grundfläche) mit L-förmiger Grundfläche, wobei sich die Mantelflächen der senkrechten Zylinder 80 senkrecht von der Flachseite 20 fortstrecken (aus Übersichtsgründen sind in Fig. 2 keine Kontaktflächen dargestellt) . The frame 70 consists, as shown in Fig. 2 each of four general vertical cylinders 80 (in the mathematical sense, ie vertical cylinder with not necessarily circular base) with L-shaped base, wherein the lateral surfaces of the vertical cylinder 80 perpendicular from the flat side 20th continue (for clarity, no contact surfaces are shown in Fig. 2).

Die L-förmigen Grundflächen sind derart relativ zueinander orientiert und angeordnet, dass die Schenkel der Zylinder 80 mit L-förmiger Grundfläche außen an solchen Seitenabschnitten eines gedachten Rechtecks anliegen, welche die Ecken des ge- dachten Rechtecks beinhalten. D.h. ein Flachteil mit recht¬ eckiger Längsschnittsfläche ist mit seinen Ecken mit den Scheiteln der Zylinder 80 zur Anlage bringbar und somit formschlüssig in Richtung der flächigen Erstreckungen der Flachseite 20 des Substrats 10 und somit in Richtungen der flächi- gen Erstreckungen der Kontaktfläche 50 festlegbar. The L-shaped bases are oriented and arranged relative to each other such that the legs of the L-shaped base cylinders 80 abut the exterior of such side portions of an imaginary rectangle as the corners of the imaginary rectangle. That is, a flat part with right ¬ rectangular longitudinal cross-sectional area with its corners with the apexes of the cylinder 80 be brought into contact and thus a form-fitting fixed in the direction of the sheet-like extensions of the flat side 20 of the substrate 10, and thus in the directions of two-dimensional extensions of the contact surface 50th

Die Zylinder 80 bilden lineare Gleitführungen für Flachteile mit reckteckiger Längsschnittsfläche in diejenige Stellung, in welcher die Flachteile festgelegt sind. Die Zylinder 80 erlauben folglich eine besonders einfache erfindungsgemäße Fertigung des erfindungsgemäßen Leistungsmoduls. The cylinders 80 form linear sliding guides for flat parts with rectangular cross-sectional area in the position in which the flat parts are fixed. The cylinders 80 thus allow a particularly simple production according to the invention of the power module according to the invention.

Die Zylinder 80 des Rahmens 70 sind im gezeigten Ausführungs¬ beispiel an das Substrat 10 angespritzt. In weiteren, nicht eigens dargestellten Ausführungsbeispielen können die Rahmen 70 grundsätzlich auch mit einer anderen Gestalt ausgebildet sein, etwa können die Rahmen 70 die Kontaktflächen 50 vollum- fänglich umgebend ausgebildet sein und mittels Durchführungen für Kühlflüssigkeit durchlässig ausgebildet sein. The cylinder 80 of the frame 70 are molded in the embodiment shown ¬ example, to the substrate 10. In further, not specifically illustrated embodiments, the frame 70 may in principle also be formed with a different shape, for example, the frame 70, the contact surfaces 50 fully. be circumferentially formed surrounding and be designed to be permeable by means of passages for cooling liquid.

In weiteren, nicht eigens gezeigten Ausführungsbeispielen kann der Rahmen 70 auf andere Weise an das Substrat 10 ange¬ bunden sein, beispielsweise an das Substrat 10 3D-gedruckt oder geklebt oder gelötet oder gesintert oder lediglich fest¬ gedrückt sein. Weiterhin können in in weiteren Ausführungsbeispielen weitere 3D-Verfahren zum Einsatz kommen, insbeson- dere SLS (selektives Lasersintern) und/oder SLA (Stereolitho¬ grafie) und/oder Polygrafie und/oder Fused Deposition Mode- ling (FDM) und/oder 3DP (3D Printing) und/oder Vakuumguss und/oder weitere Verfahren. Wie in Fig. 3 dargestellt und oben bereits kurz skizziert, weist das erfindungsgemäße Leistungsmodul Leistungsbauteile 90 auf, welche ihrerseits Flachteile mit Flachseiten 92 bil¬ den. Die Leistungsbauteile 90 weisen an diesen Flachseiten 92 elektrische Flächenkontakte 95 zur elektrischen Kontaktierung auf. Die Leistungsbauteile 90 weisen zudem rechteckige In another, not specifically shown embodiments, the frame may be integrally connected ¬ 70 in other ways to the substrate 10 may be 3D-printed, for example, to the substrate 10 or glued or soldered or sintered, or simply firmly pressed ¬. Furthermore, can be used in further in other embodiments, 3D method, and in particular SLS (Selective Laser Sintering) and / or SLA (StereoLitho ¬ graphy) and / or polygraphy and / or Fused Deposition fashion ling (FDM) and / or 3DP (3D Printing) and / or vacuum casting and / or other methods. As shown in FIG. 3 already described briefly above, power module according to the invention to power components 90, which in turn flat parts with flat sides 92 bil ¬. The power components 90 have on these flat sides 92 electrical surface contacts 95 for electrical contacting. The power components 90 also have rectangular

Längsschnittsflächen auf und sind in den Rahmen 70 mit ihren Längsschnittsflächen parallel zu den flächigen Erstreckungen der Flachseite 20 eingebracht. Die Leistungsbauteile 90 sind von den Kontaktflächen 50 an dem Substrat 10 sowie von dem Substrat 10 selbst beabstandet und mittels elektrisch leiten¬ der Kontaktstücke 100 mit rechteckiger Längsschnittsfläche an die Kontaktflächen 50 oder an weitere Bestandteile des erfin¬ dungsgemäßen Leistungsmoduls elektrisch leitend angebunden. Die Kontaktstücke 100 sind ebenfalls mit ihrer rechteckigen Längsschnittsfläche in die Rahmen 70 eingebracht. Longitudinal sectional areas and are introduced into the frame 70 with their longitudinal sectional areas parallel to the flat extensions of the flat side 20. The power components 90 are spaced from the contact surfaces 50 on the substrate 10 and from the substrate 10 itself and electrically conductively ¬ connected by means of electrically conductive ¬ the contact pieces 100 with a rectangular longitudinal sectional area of the contact surfaces 50 or other components of the inventions ¬ inventive power module. The contact pieces 100 are also introduced with their rectangular longitudinal sectional area in the frame 70.

Erfindungsgemäß wird das erfindungsgemäße Leistungsmodul der¬ art hergestellt, dass das zunächst Kontaktstücke 100 jeweils in einen Rahmen 70 in Richtung auf das Substrat 10 zu einge- bracht werden und mittels der Zylinder 80 in Richtung auf die Flachseite 20 des Substrats zu gleitend geführt werden und in Richtungen der flächigen Erstreckungen der Flachseite 20 und folglich in Richtung der flächigen Erstreckungen der Kontakt- flächen 50 festgelegt werden und nachfolgend beispielsweise mittels Galvanisierens an die Kontaktflächen 50 des Substrats 10 elektrisch kontaktiert werden. Dabei werden According to the invention power module of the ¬ art to the invention is manufactured such that the first contact pieces 100 are introduced to einge- respectively in a frame 70 in the direction of the substrate 10 and are guided by means of the cylinder 80 toward the flat side 20 of the substrate to be slidably and in Directions of the planar extensions of the flat side 20 and thus in the direction of the planar extensions of the contact surfaces 50 are fixed and subsequently electrically contacted, for example by means of electroplating to the contact surfaces 50 of the substrate 10. It will be

geeigneterweise sämtliche Kontaktstücke zugleich in einem einzigen Arbeitsgang mittels Galvanisierens angebunden. Nachfolgend werden Leistungsbauteile 90 in Richtung auf das Sub¬ strat 10 zu in einige der Rahmen 70 eingebracht und mittels der Zylinder 80 auf das Substrat 10 zu geführt ebenfalls in Richtung der flächigen Erstreckungen der Flachseite 20 fest- gelegt. Das Leistungsbauteil 90 wird seinerseits mit dem Kon¬ taktstück 100 mittels Galvanisierens elektrisch kontaktiert. Grundsätzlich können Kontaktstück 100 und Leistungsbauteil 90 und Substrat 10 in einem weiteren Ausführungsbeispiel des er¬ findungsgemäßen Verfahrens auch in einem einzigen Arbeitsgang mittels Galvanisierens elektrisch kontaktiert werden. suitably connected all the contacts at the same time in a single operation by means of electroplating. Subsequently, power components 90 are in the direction of the sub ¬ strat to 10 and introduced in some of the frame 70 to be guided by the cylinder 80 to the substrate 10 is also placed in the direction of the fixed planar extents of the flat side of the twentieth The power device 90 is in turn in electrical contact with the con tact ¬ piece 100 by means of electroplating. In principle, contact piece 100 and power component 90 and substrate 10 can be electrically contacted in a further embodiment of he ¬ inventive method in a single operation by means of electroplating.

Die Leistungsbauteile 90 sind Bipolartransistoren mit iso¬ lierter Gate-Elektrode (englisch: „Insulated-Gate Bipolar Transistor": IGBT) und weisen jeweils einander abgewandte Flachseiten 92 auf. Entlang Flachseiten 92 erstrecken sich dünnschichtartige Flächenkontakte 95 der Leistungsbauteile 90, welche als flächige Chipmetallisierungen ausgebildet sind. Im dargestellten Ausführungsbeispiel bestehen die Flä¬ chenkontakte 95 der Leistungsbauteile 90 jeweils aus Kupfer. Grundsätzlich können Flächenkontakte 95 auch sämtlich oder zum Teil aus oder mit Silber oder aus oder mit AlSiCu, sons¬ tigen Metallen oder anderen elektrisch leitenden Materialien gebildet sein. Die Kontaktstücke 100 sind jeweils aus offenporigem und offenzelligem Material gefertigt und als elektrisch leitfähige Kupferschwämme realisiert. Aufgrund der offenzelligen und offenporigen Struktur der Kontaktstücke 100 sind die Kontakt¬ stücke 100 mit Kühlfluid, beispielsweise Kühlflüssigkeit oder auch Luft, durchströmbar. Es versteht sich, dass in weiteren, nicht eigens dargestellten Ausführungsbeispielen, welche im Übrigen den anhand der Figuren erläuterten Ausführungsbeispielen entsprechen, die offenporigen Kontaktstücke 100 auch aus sonstigen offenporigen und elektrisch leitfähigen Materialien bestehen können, etwa aus Geweben oder Netzen oder sonstigen porösen Strukturen gebildete Aluminium- oder Titankontaktstücke oder aus oder mit sonstigen Metallen gebildete Kontaktstücke. Beispielsweise können auch mit leitfähigen Ma¬ terialien bereichsweise beschichtete oder mit leitfähigen Partikeln versetzte Polymerschwämme als Kontaktstücke 100 dienen . Die Kontaktstücke 100 sind im dargestellten Ausführungsbei¬ spiel galvanisch und bei der Herstellung des erfindungsgemä¬ ßen Leistungsmoduls unter Verwendung eines Elektrolytbades an Flächenkontakte 95 der Leistungsbauteile 90 sowie an die elektrische Kontaktflächen 50 des Substrats 10 angebunden. Dabei ist galvanisch Kupfer an der Anlagefläche von Kontakt¬ stücken 100 und Kontaktflächen 50 des Substrats 10 oder Flä¬ chenkontakten weiterer Bestandteile des erfindungsgemäßen Leistungsmoduls sowie der Kontaktstücke 100 und den Flächen¬ kontakten 95 der Leistungsbauteile 90 abgeschieden, sodass die Kontaktstücke 100 jeweils Stoffschlüssig und elektrisch leitend an die Kontaktflächen 50 des Substrats 10 und/oder weiterer Bestandteile des erfindungsgemäßen Leistungsmoduls und/oder der Flächenkontakte 95 der Leistungsbauteile 90 an¬ gebunden sind. Sämtliche Kontaktstücke 100 sind mit den je- weiligen Flächenkontakten 95 und/oder Kontaktflächen 50 verbunden, an welchen sie jeweils anliegen. The power components 90 are bipolar transistors with iso ¬ profiled gate electrode (English: "Insulated-Gate Bipolar Transistor" IGBT) and each have flat sides 92 having opposing to Along the flat sides 92 to thin film-like surface contacts 95 extend the power components 90, which as a flat Chipmetallisierungen. are formed. In the illustrated embodiment there are the FLAE ¬ chenkontakte 95 of the power components 90 each made of copper. 95 In principle surface contacts also all or part of or silver, or from or with AlSiCu, sons ¬ term metals or other electrically conductive materials may be formed. the contact pieces 100 are each made of open-pore and open-cell material, and realized as an electrically conductive copper sponges. Because of the open-cell and open-cell structure of the contact pieces 100, the contact pieces 100 ¬ with cooling fluid, for example cooling liquid or It is understood that in other, not specifically illustrated embodiments, which otherwise correspond to the embodiments explained with reference to FIGS, the open-pore contact pieces 100 also may consist of other open-pore and electrically conductive materials, such as aluminum or titanium contacts formed from fabrics or nets or other porous structures or formed from or with other metals contacts. For example, with conductive Ma ¬ terialien partially coated with conductive particles or staggered polymer sponges as contact pieces 100 are used. The contact pieces 100 are connected in the illustrated Ausführungsbei ¬ game galvanically and in the manufacture of the inventive ¬ SEN power module using an electrolytic bath of surface contacts 95 of the power components 90 and to the electrical contact areas 50 of the substrate 10 degrees. It is galvanically copper on the contact surface of contact ¬ pieces 100 and contact surfaces 50 of the substrate 10 or FLAE ¬ chenkontakten further components of the power module of the invention and the contact pieces 100 and the surfaces ¬ contacts 95 of the power components 90 is deposited so that the contact pieces 100 each cohesively and electrically are conductively connected to the contact surfaces 50 of the substrate 10 and / or further components of the power module according to the invention and / or the surface contacts 95 of the power components 90 ¬ . All contact pieces 100 are connected to the respective surface contacts 95 and / or contact surfaces 50 against which they respectively rest.

In weiteren, nicht eigens gezeigten Ausführungsbeispielen, welche im Übrigen dem dargestellten Ausführungsbeispiel ent- sprechen, sind die Kontaktstücke 100 nicht galvanisch ange¬ bunden, sondern mittels Sintern oder Löten oder Diffusionslöten oder Pressen oder Klemmen oder Kleben angebunden. In another, not specifically shown embodiments which speak otherwise corresponds to the embodiment shown, the contact pieces 100 are not galvanically connected ¬, but connected by means of sintering or brazing or diffusion soldering or pressing or clamping or gluing.

Die Rahmen 70 können dabei wie in Fig. 4 dargestellt und oben beschrieben voneinander beabstandet sein. In einem weiteren, in Fig. 5 und Fig. 5a dargestellten Ausführungsbeispiel können benachbarte Rahmen 70 auch miteinander stoffschlüssig verbunden sein, etwa einstückig ausgebildet sein oder mit einstückigen Zylindern gebildet sein, welche jeweils zugleich zu benachbarten Rahmen gehören. Beispielsweise kann anstelle zweier benachbarter L-förmiger gerader Zylinder, welche zu benachbarten Rahmen 70 gehören, lediglich ein einziger gera- der Zylinder 115 vorhanden sein. Dieser einzige gerade Zylinder weist eine Grundfläche mit T-Form auf, wobei der zentrale Steg 116 der T-Form gegenüber dem Balken 118 der T-Form verbreitert ist. Somit lässt sich die Verbreiterung des zentra¬ len Stegs 116 gewissermaßen als ausgefüllter Zwischenraum zwischen zwei L-förmigen Zylindern ansehen. The frames 70 may be as shown in FIG. 4 and spaced above each other. In a further exemplary embodiment illustrated in FIGS. 5 and 5 a, adjacent frames 70 can also be connected to one another in a material-locking manner, for example in one piece or with be formed one-piece cylinders, which each belong to adjacent frames at the same time. For example, instead of two adjacent L-shaped straight cylinders associated with adjacent frames 70, only a single straight cylinder 115 may be present. This single straight cylinder has a base of T-shape, with the central web 116 of the T-shape being widened with respect to the beam 118 of the T-shape. Thus, the widening of the centra ¬ len web 116 can view a certain extent as a filled intermediate space between two L-shaped cylinders.

Im in Fig. 6 und 7 dargestellten Ausführungsbeispiel sind nicht notwendigerweise die Kontaktstücke 100 in Rahmen 70 ar¬ retiert. Stattdessen sind in diesem Ausführungsbeispiel die Leistungsbauteile 90 mit einem vollumfänglichen Rahmenplätt¬ chen 300 umgeben, welcher die Leistungsbauteile 90 zumindest formschlüssig festlegt. In the in Fig. 6 and 7 illustrated embodiment, the contact pieces are not necessarily 100 ar ¬ retiert in frame 70. Instead, in this exemplary embodiment, the power components 90 are surrounded by a full-frame frame plate 300, which defines the power components 90 at least in a form-fitting manner.

Zusätzlich zur formschlüssigen Arretierung sind die leis- tungsbauteile 90 zudem stoffschlüssig mit dem Rahmenplättchen verbunden, im dargestellten Falle ist das Leistungsbauteil 90 in das Rahmenplättchen 300 eingegossen, d.h. das Leistungsbauteil ist zumindest teilweise derart in das Rahmenplättchen 300 eingelassen, dass das Rahmenplättchen das Leistungsbau- teil 90 in Richtung senkrecht zu dessen Flachseiten überlappt . In addition to the positive locking, the power components 90 are also materially connected to the frame plate, in the illustrated case the power component 90 is cast into the frame plate 300, i. the power component is at least partially embedded in the frame plate 300 such that the frame plate overlaps the power component 90 in the direction perpendicular to its flat sides.

Die Rahmenplättchen 300 sind dabei derart gebildet, dass die aus einem Wafer vereinzelten Leistungsbauteile 90 in an sich bekannter Weise in einen Moldwafer 302 eingegossen werden, aus welchem dann die Leistungsbauteile 90 jeweils gemeinsam mit einem überstehenden Rahmen, welcher das Rahmenplättchen 300 bildet, aus dem Moldwafer 302 ausgeschnitten werden. Diese Rahmenplättchen 300 sind mit ihren Randbereichen wie in Fig. 7 dargestellt in Seitenwände 305 eines Gehäuses des er¬ findungsgemäßen Leistungsmoduls eingelassen, beispielsweise eingegossen. Da das Rahmenplättchen 300 das Leistungsbauteil 90 in dessen Dickenrichtung, also senkrecht zu dessen Flach- Seiten 92 überlappt, sind die beiden Flachseiten mittels des Rahmenplättchens 300 zuverlässig elektrisch isoliert. Damit ist das Rahmenplättchens 300 gegenüber unterschiedlichen Po¬ tentialen, mit welchen das Leistungsbauteil 90 leitend in Kontakt steht, hinreichend durchschlägstest , sodass eine zu¬ sätzliche Isolierung grundsätzlich entbehrlich ist. The frame plates 300 are in this case formed in such a way that the power components 90 separated from a wafer are cast into a mold wafer 302 in a manner known per se, from which the power components 90 then each together with a protruding frame, which forms the frame plate 300, from the mold wafer 302 are cut out. As shown in FIG. 7, these frame flakes 300 are embedded in side walls 305 of a housing of the power module according to the invention, for example cast in, as shown in FIG. Since the frame plate 300, the power component 90 in its thickness direction, that is perpendicular to its flat Overlaps pages 92, the two flat sides are reliably electrically isolated by means of the frame plate 300. Thus, the frame plate 300 to different Po ¬ tentialen with which the power device 90 is in contact conductive durchschlägstest sufficiently, so that an additional insulation to ¬ is basically unnecessary.

Grundsätzlich kann in weiteren, nicht eigens dargestellten Ausführungsbeispielen das Leistungsbauteil 90 auch beispiels- weise derart in Rahmenplättchen eigefasst werden, dass dieIn principle, in other exemplary embodiments, which are not specifically illustrated, the power component 90 can also be enclosed, for example, in frame plates such that the

Rahmenplättchen aus zwei Halbschalen gebildet sind, in welche das Leistungsbauteil 90 eingelegt und vorzugsweise festge¬ klebt wird. Die in der Zeichnung dargestellten Komponenten des erfindungsgemäßen Leistungsmoduls sind mittels eines an sich be¬ kannten Bestückungsprozesses zu einem erfindungsgemäßen Leistungsmodul zusammengefügt: Die Komponenten des Leistungsmo¬ duls umfassen zum einen das Gehäuse mit sich (hinsichtlich der Figuren 1 bis 5) parallel zur Zeichenebene erstreckenden Seitenwänden 305 (das Ausführungsbeispiel gem. Fig. 7 ist im Querschnitt dargestellt, d.h. die Seitenwände 305 sind hier im Querschnitt explizit zu sehen) . Zwischen diesen Seitenwänden 305 ist einerseits das Substrat 10 sowie ein weiteres Substrat 310 angeordnet. Das weitere Substrat 310 ist gleich¬ artig dem Substrat 10 ausgebildet und bildet ein Flachteil mit zwei einander abgewandten Flachseiten 320, 330, welche parallel zu den Flachseiten 20, 30 des Substrats 10 orien¬ tiert sind. Die Flachseiten 320, 330 tragen ebenfalls mittels metallgefüllter Durchkontaktierungen elektrisch leitend verbundene Kontaktflächen 350. Frame plates are formed from two half-shells, in which the power device 90 is inserted and preferably Festge ¬ sticks. The components of the power module according to the invention shown in the drawing are assembled by means of a per se be ¬ known mounting process to a power module according to the invention: The components of the Leistungsmo ¬ module comprise on the one hand the housing with (with respect to Figures 1 to 5) parallel to the plane extending side walls 305 (the embodiment according to Fig. 7 is shown in cross-section, ie the side walls 305 can be seen explicitly in cross-section here). Between these side walls 305, on the one hand, the substrate 10 and a further substrate 310 are arranged. The further substrate 310 is formed the same ¬ like the substrate 10 and forms a flat portion with two opposite flat sides 320, 330 which are parallel to the flat sides 20, 30 of the substrate 10 orien ¬ advantage. The flat sides 320, 330 likewise carry electrically conductive contact surfaces 350 by means of metal-filled plated-through holes.

Gemeinsam mit den Seitenwänden 305 begrenzen die Substrate 10, 310 einen Kühlkanal 360 des Leistungsmoduls für ein Kühl- fluid eines Kühlkreislaufes des Leistungsmoduls. Im in den Fig. 6 und 7 dargestellten Ausführungsbeispiel können die Kontaktstücke 100 den zwischen den Seitenwänden 305 befindli¬ chen Zwischenraum in der ganzen Breite ausfüllen, wobei die Leistungsbauteile 90 mittels der Rahmenplättchen 300 relativ zu den Kontaktstücken 100 formschlüssig arretiert sind, wäh¬ rend im Ausführungsbeispiel gem. Fig. 1 bis 5 die Kontaktstü¬ cke 100 gemeinsam mit den Leistungsbauteilen 90 in Rahmen 70 eingefasst sind. Grundsätzlich können die beiden Ausführungs¬ beispiele aber auch in ein und demselben Leistungsmodul kom¬ biniert sein. Grundsätzlich kann der Aufbau gem. Fig. 7 auch in vertikaler Richtung ein- oder mehrfach wiederholt werden, indem jeweils das Substrat 310 wiederum an die Stelle des Substrats 10 tritt. Auf diese Weise lässt sich eine Reihen¬ schaltung von Leistungsbauteilen 90 realisieren. Together with the side walls 305, the substrates 10, 310 delimit a cooling channel 360 of the power module for a cooling fluid of a cooling circuit of the power module. In in Figs. 6 and 7 illustrated embodiment, the contact pieces which can be filled in between the side walls 305 befindli ¬ chen gap in the whole width 100 which Power components 90 are positively locked by means of the frame plate 300 relative to the contact pieces 100, currency ¬ ing in the embodiment according to. Fig. 1 to 5, the Kontaktstü ¬ bridge 100 are enclosed together with the power components 90 in frame 70. In principle, the two execution ¬ examples can be com ¬ bined in a single power module. Basically, the structure gem. Fig. 7 also in the vertical direction one or more times be repeated by the substrate 310 in turn takes the place of the substrate 10. In this way, a series ¬ circuit of power components 90 can be realized.

Aufgrund der offenzelligen und offenporigen Struktur der Kontaktstücke 100 sowie der Druchbrechungen der Rahmen 70 sind die Kontaktstücke 100 mit Kühlflüssigkeit durchströmbar. Due to the open-cell and open-pored structure of the contact pieces 100 and the Druchbrechungen the frame 70, the contact pieces 100 can be flowed through with cooling liquid.

In dargestellten Ausführungsbeispiel übernimmt eine später durch den Kühlkanal 360 geleitete Kühlflüssigkeit gleichzei¬ tig die Isolationseigenschaften, d.h. die Kühlflüssigkeit ist selbst nicht elektrisch leitend. In weiteren, nicht eigens dargestellten Ausführungsbeispielen ist die Kühlflüssigkeit Kühlwasser und Kontaktstücke 100 sind geeignet elektrisch isoliert, beispielsweise mittels Kunststoffs, der durch Dis¬ penskanäle durch die Substrate 10, 310 hindurch zu den Kon- taktstücken 100 gegeben wird (nicht in der Zeichnung dargestellt) . In the illustrated embodiment, a later passed through the cooling channel 360 cooling fluid simultane- ously ¬ tig the insulation properties, ie the cooling liquid is not electrically conductive itself. In further, not specifically illustrated embodiments, the cooling liquid cooling water and contact pieces 100 are suitably electrically isolated, for example by means of plastic, which is passed through Dis ¬ penskanäle through the substrates 10, 310 therethrough to the contact pieces 100 (not shown in the drawing) ,

Bei dem derart bereitgestellten Leistungsmodul sind nun die Leistungsbauteile 90 direkt im Kühlkanal 360 befindlich. In the power module thus provided, the power components 90 are now located directly in the cooling channel 360.

Durch den Kühlkanal 360 geleitetes Kühlfluid kann nun dieThrough the cooling channel 360 passed cooling fluid can now

Leistungsbauteile 90 beidseitig oder sogar allseits umströ¬ men. Eine Wärmeabfuhr ist folglich besonders effizient mög¬ lich. Wie bereits oben erläutert ist eine zusätzliche Isolierung von Kontaktstücken 100 bei einer hinreichend hohen Durchschlagfestigkeit der Rahmenplättchen 300 nicht zwingend not¬ wendig . Power components 90 on both sides or even on all sides umströ ¬ men. Heat dissipation is therefore particularly efficient mög ¬ Lich. As already explained above, an additional insulation of contact pieces 100 with a sufficiently high dielectric strength of the frame plates 300 is not absolutely necessary.

Claims

Patentansprüche claims 1. Leistungsmodul, aufweisend mindestens ein elektrisches Bauteil (10, 90) mit einer Kontaktfläche (50, 95), bei wel¬ chem das elektrische Bauteil (10, 90) mittels der Kontaktflä¬ che (50, 95) an mindestens ein mit offenporigem Material ge¬ bildetes Kontaktstück (100) des Leistungsmoduls elektrisch kontaktiert ist und das zumindest eine elektrische Bauteil (10, 90) und das zumindest eine Kontaktstück (100), zumindest in Richtungen der flächigen Erstreckungen der mindestens einen Kontaktfläche (50, 95), relativ zueinander, und vorzugs¬ weise zudem gegenüber mindestens einem weiteren Bauteil des Leistungsmoduls, zumindest formschlüssig festgelegt sind. 1. power module, comprising at least one electrical component (10, 90) with a contact surface (50, 95) at wel ¬ chem the electrical component (10, 90) by means of Kontaktflä ¬ che (50, 95) at least one with open-pored Material ge ¬ formed contact piece (100) of the power module is electrically contacted and the at least one electrical component (10, 90) and the at least one contact piece (100), at least in directions of the planar extensions of the at least one contact surface (50, 95), relative to each other, and preferential ¬, in addition to at least one other component of the power module, at least fixed in a form-fitting manner. 2. Leistungsmodul nach dem vorhergehenden Anspruch, welches ein Substrat (10) und/oder Leistungsbauteil (90) aufweist, wobei das Substrat (10) und/oder Leistungsbauteil (90) des Leistungsmoduls das mindestens eine elektrische Bauteil (90) des Leistungsmoduls bildet oder bilden. 2. Power module according to the preceding claim, which has a substrate (10) and / or power component (90), wherein the substrate (10) and / or power component (90) of the power module forms the at least one electrical component (90) of the power module or form. 3. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem das Kontaktstück (100) mit offenzeiligem Material gebildet und/oder an das elektrische Bauteil (10, 90) mittels Galvanisierens angebunden ist. 3. Power module according to one of the preceding claims, wherein the contact piece (100) formed with open-material and / or to the electrical component (10, 90) is connected by means of galvanizing. 4. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem das mindestens eine Kontaktstück (100) mit einem Metallschwamm und/oder einem Metallschaum gebildet ist. 4. Power module according to one of the preceding claims, wherein the at least one contact piece (100) is formed with a metal sponge and / or a metal foam. 5. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine elektrische Bauteil (10, 90) und/oder zumindest eine Kontaktstück (100) sowohl formschlüs¬ sig als auch stoffschlüssig festgelegt sind. 5. Power module according to one of the preceding claims, wherein the at least one electrical component (10, 90) and / or at least one contact piece (100) are fixed both formschlüs ¬ sig and cohesively. 6. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine elektrische Bauteil (10, 90) und zumindest eine Kontaktstück (100) mittels eines Rahmens des Leistungsmoduls (70, 300) festgelegt ist, welcher vor¬ zugsweise in Richtung der flächigen Erstreckungen der Kontaktfläche (50, 95) durchführende Durchbrechungen aufweist. 6. Power module according to one of the preceding claims, wherein the at least one electrical component (10, 90) and at least one contact piece (100) by means of a frame of the power module (70, 300) is fixed, which has ¬ preferably in the direction of the planar extensions of the contact surface (50, 95) performing openings. 7. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem der Rahmen (70) Vorsprünge (80) aufweist, welche sich zumindest quer, vorzugsweise senkrecht, zur Kontaktflä¬ che (50, 95) des zumindest einen elektrischen Bauteils (10, 90 ) , erstrecken . 7. Power module according to one of the preceding claims, wherein the frame (70) has projections (80) which at least transversely, preferably perpendicular, to Kontaktflä ¬ che (50, 95) of the at least one electrical component (10, 90), extend. 8. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem der Rahmen (300) mittels zumindest eines Teils eines Moldwafers (302) gebildet ist. A power module as claimed in any preceding claim, wherein the frame (300) is formed by at least a portion of a mold wafer (302). 9. Leistungsmodul nach einem der vorhergehenden Ansprüche, welches einen Kühlstrompfad (360), ausgebildet zur Führung eines Kühlfluids entlang einer Kühlstromrichtung, aufweist, dessen Kühlstromrichtung sich zumindest entlang einer Richtung der flächigen Erstreckung der Flachseite (20, 92) des mindestens einen Leistungsbauteils erstreckt. 9. Power module according to one of the preceding claims, which has a cooling flow path (360), designed to guide a cooling fluid along a cooling flow direction, the cooling flow direction extends at least along a direction of the planar extent of the flat side (20, 92) of the at least one power component. 10. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem der Rahmen (70, 300) zur Fassung eines Kontaktstücks (100) mit rechteckiger Längsschnittsfläche und/oder eines elektrischen Bauteils (90) mit rechteckiger 10. Power module according to one of the preceding claims, wherein the frame (70, 300) for mounting a contact piece (100) having a rectangular longitudinal sectional area and / or an electrical component (90) with rectangular Längsschnittsfläche ausgebildet ist. Longitudinal sectional area is formed. 11. Leistungsmodul nach einem der vorhergehenden Ansprüche, welches ein Führungsmittel aufweist, mittels welchem das elektrische Bauteil (10, 90) und/oder das Kontaktstück (100) in diejenige relative Stellung zueinander führbar ist oder sind, in welcher Kontaktstück (100) und elektrisches Bauteil (10, 90) relativ zueinander festgelegt sind. 11. Power module according to one of the preceding claims, which has a guide means by which the electrical component (10, 90) and / or the contact piece (100) in that relative position to each other can be guided or, in which contact piece (100) and electrical Component (10, 90) are fixed relative to each other. 12. Verfahren zur Herstellung eines Leistungsmoduls nach einem der vorhergehenden Ansprüche, bei welchem zumindest ein elektrisches Bauteil (10, 90) mit einer Kontaktfläche (50, 95) herangezogen wird und bei welchem das elektrische Bauteil (10, 90) mittels der Kontaktfläche (50, 95) an mindestens ein mit offenporigem Material gebildetes Kontaktstück (100) elektrisch kontaktiert wird und das zumindest eine elektri¬ sche Bauteil (10, 90) und das zumindest eine Kontaktstück (100), zumindest in Richtungen der flächigen Erstreckungen der mindestens einen Kontaktfläche (50, 95), mittels einer Festlegvorrichtung, insbesondere mittels eines Rahmens (70, 300), relativ zueinander, und vorzugsweise zudem relativ zu mindestens einem weiteren Bauteil des Leistungsmoduls zumin- dest formschlüssig und vorzugsweise mittels eines Führungs¬ mittels (80) festgelegt werden. 12. A method for producing a power module according to one of the preceding claims, wherein at least one electrical component (10, 90) with a contact surface (50, 95) is used and in which the electrical component (10, 90) by means of the contact surface (50, 95) to at least one formed with open-pore material contact piece (100) is electrically contacted, and the at least one electrical ¬-specific component (10, 90) and the at least one contact piece (100), at least in directions of the planar extensions of the at least one contact surface (50, 95), by means of a fixing device, in particular by means of a frame (70, 300), relative to each other, and preferably also relative to at least one further component of the power module at least positive locking and preferably by means a guide ¬ means (80) are set.
PCT/EP2018/051816 2017-02-06 2018-01-25 Power module Ceased WO2018141621A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102017201821 2017-02-06
DE102017201821.6 2017-02-06
DE102017001249.0 2017-02-09
DE102017001249 2017-02-09
DE102017203132.8 2017-02-27
DE102017203132.8A DE102017203132A1 (en) 2017-02-06 2017-02-27 power module

Publications (2)

Publication Number Publication Date
WO2018141621A2 true WO2018141621A2 (en) 2018-08-09
WO2018141621A3 WO2018141621A3 (en) 2018-10-25

Family

ID=62910198

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/051816 Ceased WO2018141621A2 (en) 2017-02-06 2018-01-25 Power module

Country Status (2)

Country Link
DE (1) DE102017203132A1 (en)
WO (1) WO2018141621A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020200721A1 (en) * 2019-04-04 2020-10-08 Siemens Aktiengesellschaft Device for dissipating heat from electrical and/or electronic components
EP3758061A1 (en) * 2019-06-27 2020-12-30 SFI Electronics Technology Inc. Packaging method for attached single small-size and array type chip semiconductor components with one or two circuit boards with electroplated through-interconnections
WO2023030789A1 (en) * 2021-08-30 2023-03-09 Robert Bosch Gmbh Electronic module comprising at least one power semiconductor and method for producing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020134563A1 (en) 2020-12-22 2022-06-23 Danfoss Silicon Power Gmbh Power module and method of manufacturing a power module

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439427A1 (en) * 1960-05-18 1969-06-26 Siemens Ag Semiconductor device and method for the production thereof
BE794291A (en) * 1972-01-22 1973-05-16 Siemens Ag SEMICONDUCTOR DEVICE GROUPING SEVERAL SEMICONDUCTOR BODIES IN THE FORM OF PELLETS
JPS56142645A (en) * 1980-04-07 1981-11-07 Hitachi Ltd Semiconductor device
JPS5787139A (en) * 1980-11-19 1982-05-31 Hitachi Ltd Semiconductor device
JPH07211731A (en) * 1994-01-27 1995-08-11 Fuji Electric Co Ltd Semiconductor device
CN1236982A (en) 1998-01-22 1999-12-01 株式会社日立制作所 Pressure contact type semiconductor device and its converter
US20050111188A1 (en) 2003-11-26 2005-05-26 Anandaroop Bhattacharya Thermal management device for an integrated circuit
JP2006128262A (en) * 2004-10-27 2006-05-18 Kyocera Corp Electronic component mounting substrate, electronic device, and method of manufacturing electronic component mounting substrate
DE102006055340A1 (en) 2006-11-23 2008-05-29 Siemens Ag Explosion-proof module construction for power components, in particular power semiconductor components and its manufacture
TWI339865B (en) * 2007-08-17 2011-04-01 Chipmos Technologies Inc A dice rearrangement package method
JP4958735B2 (en) * 2007-11-01 2012-06-20 株式会社日立製作所 Power semiconductor module manufacturing method, power semiconductor module manufacturing apparatus, power semiconductor module, and joining method
US20110024896A1 (en) * 2008-07-07 2011-02-03 Mitsubishi Electric Corporation Power semiconductor device
DE102009000514A1 (en) * 2009-01-30 2010-08-26 Robert Bosch Gmbh Composite component and method for producing a composite component
KR20130139011A (en) * 2012-06-12 2013-12-20 한국전자통신연구원 Direct bonded copper substrate and power semiconductor module
KR101963722B1 (en) * 2012-12-28 2019-07-31 에스케이하이닉스 주식회사 Substrate, semiconductor package using the same and methods for fabricating the semiconductor package
US9585241B2 (en) * 2013-09-24 2017-02-28 Infineon Technologies Ag Substrate, chip arrangement, and method for manufacturing the same
DE102013219733B4 (en) * 2013-09-30 2015-05-07 Siemens Aktiengesellschaft Process for the edge coating of a monolithically integrated semiconductor component
US9373559B2 (en) 2014-03-05 2016-06-21 International Business Machines Corporation Low-stress dual underfill packaging
DE102014105957B3 (en) * 2014-04-29 2015-06-25 Infineon Technologies Ag Method for producing a solder joint
US9941234B2 (en) * 2015-05-28 2018-04-10 Ut-Battelle, Llc Integrated packaging of multiple double sided cooling planar bond power modules
DE102015210061A1 (en) * 2015-06-01 2016-12-01 Siemens Aktiengesellschaft Method for electrical contacting of a component and component module
DE102015214928A1 (en) * 2015-08-05 2017-02-09 Siemens Aktiengesellschaft Component module and power module
DE102016218420A1 (en) * 2016-09-26 2018-03-29 Siemens Aktiengesellschaft power module

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020200721A1 (en) * 2019-04-04 2020-10-08 Siemens Aktiengesellschaft Device for dissipating heat from electrical and/or electronic components
EP3758061A1 (en) * 2019-06-27 2020-12-30 SFI Electronics Technology Inc. Packaging method for attached single small-size and array type chip semiconductor components with one or two circuit boards with electroplated through-interconnections
WO2023030789A1 (en) * 2021-08-30 2023-03-09 Robert Bosch Gmbh Electronic module comprising at least one power semiconductor and method for producing same

Also Published As

Publication number Publication date
WO2018141621A3 (en) 2018-10-25
DE102017203132A1 (en) 2018-08-09

Similar Documents

Publication Publication Date Title
AT514085B1 (en) power module
DE102009045063C5 (en) Power semiconductor module with molded-on heat sink, power semiconductor module system and method for producing a power semiconductor module
EP3332420B1 (en) Component module and power module
DE102012218304B4 (en) Power semiconductor device module
DE3402003A1 (en) PERFORMANCE SEMICONDUCTOR MODULE
WO2010136017A1 (en) Cooled electric unit
WO2018141621A2 (en) Power module
DE102014113238A1 (en) Electronic power device and method of manufacturing an electronic power device
DE19506093A1 (en) Diode laser device
DE102012208146A1 (en) CONNECTION SYSTEM FOR PRODUCING ELECTRICAL CONNECTIONS OF A POWER SEMICONDUCTOR MODULE AND METHOD FOR PRODUCING SUCH CONNECTIONS
EP1652231A1 (en) Device comprising at least one heat source formed by a functional element that is to be cooled, at least one heat sink, and at least one intermediate layer located between the heat source and the heat sink and made of a thermally conducting material, and thermally conducting material, especially for use in such a device
DE102009016649A1 (en) A semiconductor device and method having first and second carriers
WO2018055148A1 (en) Power module
DE102014111786A1 (en) Cooling plate, component comprising a cooling plate, and method of manufacturing a cooling plate
DE102015115132A1 (en) Semiconductor module with integrated pin or rib cooling structure
DE102016214607B4 (en) Electronic module and method for its manufacture
DE112015005593B4 (en) power module
DE102014213545A1 (en) The power semiconductor module
DE19506091B4 (en) cooling element
DE102009022877B4 (en) Cooled electrical unit
DE102021109666B3 (en) Electronic device and method for its manufacture
DE102009040627B4 (en) Semiconductor device and method of manufacturing an electronic system
DE102019115573B4 (en) Power electronic switching device and method of manufacture
DE102020121033B4 (en) Power electronic switching device, power semiconductor module therewith and method for manufacturing
DE10249855B4 (en) Material for supplying current to semiconductor devices and method for producing such

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18704446

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18704446

Country of ref document: EP

Kind code of ref document: A2