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WO2018012267A1 - Structure de trajet d'écoulement et dispositif de traitement - Google Patents

Structure de trajet d'écoulement et dispositif de traitement Download PDF

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Publication number
WO2018012267A1
WO2018012267A1 PCT/JP2017/023421 JP2017023421W WO2018012267A1 WO 2018012267 A1 WO2018012267 A1 WO 2018012267A1 JP 2017023421 W JP2017023421 W JP 2017023421W WO 2018012267 A1 WO2018012267 A1 WO 2018012267A1
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WO
WIPO (PCT)
Prior art keywords
passages
passage
structure according
flow path
path structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/023421
Other languages
English (en)
Japanese (ja)
Inventor
視紅磨 加藤
貴洋 寺田
真也 東
田中　正幸
香織 出浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of WO2018012267A1 publication Critical patent/WO2018012267A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Definitions

  • Embodiments of the present invention relate to a flow path structure and a processing apparatus.
  • An apparatus that discharges fluid from a plurality of holes is known.
  • a shower plate discharges gas from a plurality of holes.
  • the traveling direction of the fluid is distributed around the direction in which the hole for discharging the fluid faces. For this reason, the distribution of the fluid in the space where the fluid is discharged may be biased.
  • the flow path structure includes a member.
  • the member has an outer surface and is provided with a plurality of first passages that open to the outer surface. When fluid is discharged from the plurality of first passages, the fluid is discharged from each of the plurality of first passages from at least one of the other plurality of first passages. It is discharged in the direction that hits.
  • FIG. 1 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus according to the first embodiment.
  • FIG. 2 is a plan view schematically showing a fourth surface of the shower plate of the first embodiment.
  • FIG. 3 is a plan view of the shower plate showing the passage of the first embodiment.
  • FIG. 4 is a cross-sectional view of the shower plate showing the passage of the first embodiment.
  • FIG. 5 is a plan view of the shower plate showing the passage of the first embodiment.
  • FIG. 6 is a cross-sectional view of the shower plate showing the passage of the first embodiment.
  • FIG. 7 is a plan view of the shower plate showing the passage of the first embodiment.
  • FIG. 8 is a cross-sectional view of the shower plate showing the passage of the first embodiment.
  • FIG. 1 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus according to the first embodiment.
  • FIG. 2 is a plan view schematically showing a fourth surface of the shower plate of the first embodiment.
  • FIG. 3 is a plan
  • FIG. 9 is a plan view of a shower plate showing a passage according to the second embodiment.
  • FIG. 10 is a cross-sectional view of the shower plate showing the passage of the second embodiment.
  • FIG. 11 is a plan view of a shower plate showing a passage according to the third embodiment.
  • FIG. 12 is a cross-sectional view of the shower plate showing the passage of the third embodiment.
  • FIG. 13 is sectional drawing of the shower plate which shows the channel
  • a vertically upward direction is defined as an upward direction and a vertically downward direction is defined as a downward direction.
  • a plurality of expressions may be described for the constituent elements according to the embodiment and the description of the elements.
  • the constituent elements and descriptions in which a plurality of expressions are made may be other expressions that are not described. Further, the constituent elements and descriptions that are not expressed in a plurality may be expressed in other ways that are not described.
  • FIG. 1 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus 10 according to the first embodiment.
  • the semiconductor manufacturing apparatus 10 is an example of a processing apparatus, and may be referred to as a manufacturing apparatus, an intake / exhaust apparatus, a supply apparatus, and an apparatus, for example.
  • the processing apparatus is not limited to the semiconductor manufacturing apparatus 10 and may be another apparatus that performs processing such as processing, cleaning, and testing on the target object.
  • an X axis, a Y axis, and a Z axis are defined.
  • the X axis, the Y axis, and the Z axis are orthogonal to each other.
  • the X axis is along the width of the semiconductor manufacturing apparatus 10.
  • the Y axis is along the depth (length) of the semiconductor manufacturing apparatus 10.
  • the Z axis is along the height of the semiconductor manufacturing apparatus 10.
  • the semiconductor manufacturing apparatus 10 of the first embodiment shown in FIG. 1 is, for example, a chemical vapor deposition (CVD) apparatus.
  • the semiconductor manufacturing apparatus 10 may be another apparatus.
  • the semiconductor manufacturing apparatus 10 includes a manufacturing unit 11, a pressure gauge 12, and a pump 13.
  • the pump 13 is an example of a fluid supply unit, and may be referred to as a supply unit, a discharge unit, or a sending unit, for example.
  • a chamber 21 is provided in the manufacturing unit 11.
  • the semiconductor manufacturing apparatus 10 manufactures a semiconductor wafer (hereinafter referred to as a wafer) W in the chamber 21.
  • the manufacturing unit 11 includes an upper wall 23, a peripheral wall 24, a stage 25, a diffusion plate 26, and a shower plate 27.
  • the stage 25 may also be referred to as an arrangement unit, a processing unit, a placement unit, or a table, for example.
  • the diffusing plate 26 may also be referred to as a supply unit, a discharge unit, or a part, for example.
  • the shower plate 27 is an example of a channel structure and a member, and may be referred to as, for example, an intake / exhaust member, a discharge unit, a discharge unit, a suction unit, or a component.
  • the upper wall 23 has a first inner surface 23a.
  • the first inner surface 23a is a substantially flat surface that faces in the negative direction (downward) along the Z-axis.
  • the first inner surface 23 a forms part of the chamber 21. That is, the first inner surface 23 a faces the inside of the chamber 21.
  • a supply port 31 is provided in the upper wall 23.
  • the supply port 31 is connected to the pump 13 by a pipe, for example.
  • the pump 13 supplies the gas G to the chamber 21 from the supply port 31.
  • the gas G is an example of a fluid.
  • the fluid is not limited to gas but may be liquid, for example.
  • FIG. 1 shows the flow of gas G with arrows.
  • the peripheral wall 24 has a second inner surface 24a.
  • the second inner surface 24a is a surface facing in a direction (substantially horizontal direction) perpendicular to the Z axis.
  • the second inner surface 24 a forms part of the chamber 21. That is, the second inner surface 24 a faces the inside of the chamber 21.
  • a plurality of exhaust ports 32 are provided in the peripheral wall 24.
  • the exhaust port 32 is connected to the pump 13 via the pressure gauge 12.
  • the pump 13 can suck the gas G in the chamber 21 from the exhaust port 32. In other words, the gas G in the chamber 21 is exhausted from the exhaust port 32.
  • the stage 25 has a support portion 25a.
  • the support unit 25a is an example of an object support unit, and may be referred to as, for example, an arrangement unit, a processing unit, a mounting unit, or a table.
  • the support portion 25 a is disposed inside the chamber 21.
  • the support portion 25 a faces the first inner surface 23 a of the upper wall 23 and supports the wafer W.
  • the stage 25 has a heater and can heat the wafer W supported by the support portion 25a.
  • the diffusion plate 26 is disposed inside the chamber 21 and attached to the upper wall 23.
  • the diffusion plate 26 has a first surface 26a and a second surface 26b.
  • the first surface 26 a faces the first inner surface 23 a of the upper wall 23.
  • the second surface 26b is located on the opposite side of the first surface 26a.
  • a diffusion chamber 35 is formed between the diffusion plate 26 and the upper wall 23.
  • the diffusion chamber 35 is a space surrounded by the diffusion plate 26 and the upper wall 23.
  • a supply port 31 of the upper wall 23 opens into the diffusion chamber 35. For this reason, the gas G is supplied from the supply port 31 to the diffusion chamber 35.
  • a plurality of holes 37 are provided in the diffusion plate 26.
  • the hole 37 is a hole that connects the first surface 26a and the second surface 26b. That is, the hole 37 connects between the inside and the outside of the diffusion chamber 35.
  • the shower plate 27 is disposed inside the chamber 21 and attached to the upper wall 23.
  • the shower plate 27 covers the diffusion plate 26.
  • the diffusion plate 26 is disposed between the shower plate 27 and the upper wall 23.
  • the shower plate 27 has a third surface 27a and a fourth surface 27b.
  • the third surface 27a is an example of a surface.
  • the fourth surface 27b is an example of an outer surface.
  • Each of the third surface 27a and the fourth surface 27b may be referred to as a surface, for example.
  • the third surface 27a is a substantially flat surface that faces in the positive direction along the Z axis (the direction in which the arrow on the Z axis faces, the upward direction).
  • the third surface 27a may be curved or may be provided with irregularities.
  • the third surface 27 a faces the second surface 26 b of the diffusion plate 26.
  • the third surface 27a faces a plurality of holes 37 that are opened in the second surface 26b with a gap therebetween.
  • the fourth surface 27b is located on the opposite side of the third surface 27a.
  • the fourth surface 27b is a substantially flat surface that faces in the negative direction along the Z-axis.
  • the fourth surface 27b may be a curved surface or may be provided with irregularities.
  • a supply chamber 39 is formed between the diffusion plate 26 and the shower plate 27.
  • the supply chamber 39 is a space surrounded by the diffusion plate 26 and the shower plate 27.
  • a plurality of holes 37 of the diffusion plate 26 are opened in the supply chamber 39. For this reason, the gas G in the diffusion chamber 35 is supplied to the supply chamber 39 through the plurality of holes 37 of the diffusion plate 26.
  • the third surface 27 a faces the supply chamber 39.
  • the fourth surface 27b is separated from the wafer W supported by the support portion 25a of the stage 25 via the space S in the positive direction along the Z axis.
  • the fourth surface 27b faces the wafer W supported by the support portion 25a of the stage 25 through the space S.
  • the shower plate 27 and the wafer W are arranged through the space S in the direction along the Z axis.
  • FIG. 2 is a plan view schematically showing the fourth surface 27b of the shower plate 27 of the first embodiment.
  • the shower plate 27 is provided with a plurality of passages 50. Each of the plurality of passages 50 penetrates the shower plate 27 and opens at the third surface 27a and the fourth surface 27b.
  • the plurality of passages 50 may be individually referred to as passages 50A, 50B, and 50C.
  • the description common to the passages 50A, 50B, and 50C is described as an explanation of the passage 50.
  • the size of the passage 50 with respect to the shower plate 27 is exaggerated for the sake of explanation. That is, the passage 50 is smaller with respect to the shower plate 27 than the passage 50 shown in FIG. Therefore, the number of the plurality of passages 50 provided in the shower plate 27 is larger than the number of the plurality of passages 50 shown in FIG.
  • FIG. 3 is a plan view of the shower plate 27 showing the passage 50A of the first embodiment.
  • FIG. 4 is a cross-sectional view of the shower plate 27 showing the passage 50A of the first embodiment.
  • FIG. 5 is a plan view of the shower plate 27 showing the passage 50B of the first embodiment.
  • FIG. 6 is a cross-sectional view of the shower plate 27 showing the passage 50B of the first embodiment.
  • FIG. 7 is a plan view of the shower plate 27 showing the passage 50C of the first embodiment.
  • FIG. 8 is a cross-sectional view of the shower plate 27 showing the passage 50C of the first embodiment.
  • each of the plurality of passages 50 has at least one first opening 51 and second opening 52.
  • the 1st opening 51 is an edge part of the channel
  • the second opening 52 is an end portion of the passage 50 provided in the third surface 27a. That is, the passage 50 connects the first opening 51 and the second opening 52.
  • each of the plurality of passages 50 includes at least one first passage 55 and a second passage 56.
  • the shower plate 27 is provided with a plurality of first passages 55 and a plurality of second passages 56.
  • the first passage 55 is a part of the passage 50 and is a portion that opens at the fourth surface 27 b of the shower plate 27.
  • the first passage 55 includes the first opening 51 of the passage 50.
  • the first passage 55 is a portion extending from the first opening 51.
  • the first opening 51 is a portion of the first passage 55 that opens at the fourth surface 27b.
  • the first opening 51 is an opening formed in the fourth surface 27 b of the first passage 55.
  • the second passage 56 is a part of the passage 50 and is a portion that opens at the third surface 27 a of the shower plate 27.
  • the second passage 56 includes the second opening 52 of the passage 50.
  • the second passage 56 is a portion extending from the second opening 52.
  • the second opening 52 is a portion of the second passage 56 that opens at the third surface 27a.
  • Each second passage 56 is connected to at least one first passage 55.
  • the first opening 51 of the passage 50A is formed in an annular shape.
  • the first passage 55 of the passage 50 ⁇ / b> A is formed in a cylindrical shape that extends in the direction along the Z-axis and whose inner diameter increases as the first opening 51 is approached.
  • the cross-sectional area of the first passage 55 of the passage 50 ⁇ / b> A decreases as the first opening 51 is approached.
  • the cross-sectional area of the first passage 55 of the passage 50 is a cross-sectional area in a plane orthogonal to the direction in which the first passage 55 extends.
  • the cross-sectional area of the first passage 55 of the passage 50A is a cross-sectional area in the XY plane.
  • FIG. 4 shows a cross section of the shower plate 27 in the XZ plane.
  • the direction in which the first passage 55 extends when viewed in a direction along the Y-axis as shown in FIG. 4 is as follows.
  • the direction along the Y axis is the direction in which the fourth surface 27b of the shower plate 27 faces and is orthogonal to the direction along the Z axis, which is the direction in which the shower plate 27 and the wafer W are arranged.
  • an intermediate point between both ends of the first passage 55 in the direction along the X axis is obtained.
  • the intermediate point is obtained at a plurality of points in the direction along the Z-axis, and the central axis of the first passage 55 is obtained by connecting the plurality of intermediate points.
  • the direction in which the central axis of the first passage 55 extends is the direction in which the first passage 55 in the present embodiment extends.
  • the direction in which the first passage 55 of the passage 50A obtained as described above extends obliquely intersects the Z axis.
  • the direction in which the first passage 55 extends in the passage 50A is a direction that approaches the other passage 50 adjacent to the passage 50A in the XY plane (substantially horizontal direction) as the distance from the fourth surface 27b increases.
  • the second opening 52 of the passage 50A is formed in an annular shape.
  • the second passage 56 of the passage 50A is formed in a cylindrical shape extending in the direction along the Z axis.
  • the cross-sectional area of the second passage 56 of the passage 50A is substantially constant.
  • the cross-sectional area of the second passage 56 of the passage 50 is a cross-sectional area in a plane orthogonal to the direction in which the second passage 56 extends.
  • the cross-sectional area of the second passage 56 of the passage 50A is a cross-sectional area in the XY plane.
  • the cross-sectional area of the second passage 56 is wider than the minimum cross-sectional area of the first passage 55.
  • the cross-sectional area of the second passage 56 in the second opening 52 is wider than the cross-sectional area of the first passage 55 in the first opening 51.
  • the cross-sectional area of the second opening 52 is wider than the cross-sectional area of the first opening 51.
  • the passage 50 ⁇ / b> A is formed by an inner peripheral surface 61 provided on the shower plate 27 and an inner pillar 62.
  • the inner peripheral surface 61 is a cylindrical surface extending in the direction along the Z axis, defines the outer diameter of the first passage 55, and defines the outer diameter of the second passage 56.
  • the inner column 62 is surrounded by the inner peripheral surface 61 at a position separated from the inner peripheral surface 61, defines the inner diameter of the first passage 55, and defines the inner diameter of the second passage 56.
  • the inner pillar 62 is a part of the shower plate 27 and is formed integrally with the other part of the shower plate 27.
  • the inner pillar 62 may be a part molded separately from other parts of the shower plate 27.
  • the inner pillar 62 has a conical part 62a and a pillar part 62b.
  • the conical portion 62 a is formed in a conical shape whose diameter increases as it approaches the first opening 51, and defines the inner diameter of the first passage 55.
  • the bottom surface of the conical portion 62 a forms part of the fourth surface 27 b of the shower plate 27.
  • the first passage 55 is formed between the conical portion 62 a and the inner peripheral surface 61.
  • the column part 62b is formed in a cylindrical shape extending in the direction along the Z axis from the top part of the cone part 62a, and defines the inner diameter of the second passage 56.
  • the second passage 56 is formed between the column part 62 b and the inner peripheral surface 61.
  • the column part 62b is supported by the 3rd surface 27a of the shower plate 27 via a beam, for example.
  • the passage 50 ⁇ / b> B includes four first openings 51.
  • the second passage 56 of the passage 50 ⁇ / b> B is connected to the four first passages 55.
  • the number of first passages 55 to which the second passages 56 are connected is not limited to this.
  • Each of the first openings 51 of the passage 50B is formed in an arc shape.
  • the four arc-shaped first openings 51 are spaced apart from each other in the circumferential direction, and have a substantially annular shape as a whole.
  • each of the first passages 55 of the passage 50B extends in a direction obliquely intersecting the Z axis.
  • the direction in which the first passage 55 extends in the passage 50B is a direction that approaches the other passage 50 adjacent to the passage 50B in the XY plane (substantially horizontal direction) as the distance from the fourth surface 27b increases.
  • the cross-sectional area of the first passage 55 of the passage 50 ⁇ / b> B decreases as the first opening 51 is approached.
  • the second opening 52 of the passage 50B is formed in a circular shape.
  • the second passage 56 of the passage 50B is formed in a columnar shape extending in the direction along the Z axis.
  • the cross-sectional area of the second passage 56 of the passage 50B is substantially constant.
  • the cross-sectional area of the second passage 56 is wider than the sum of the minimum cross-sectional areas of the four first passages 55.
  • the cross-sectional area of the second passage 56 in the second opening 52 is wider than the sum of the cross-sectional areas of the four first passages 55 in the first opening 51.
  • the cross-sectional area of the second opening 52 is wider than the sum of the cross-sectional areas of the four first openings 51.
  • the passage 50 ⁇ / b> B is formed by an inner peripheral surface 61 provided on the shower plate 27 and a bottom wall 64.
  • the bottom surface of the bottom wall 64 forms part of the fourth surface 27 b of the shower plate 27.
  • the bottom wall 64 forming the passage 50B includes an inner plate 64a and four connection portions 64b.
  • the bottom wall 64 is a part of the shower plate 27 and is formed integrally with the other parts of the shower plate 27.
  • the bottom wall 64 may be a part molded separately from the other parts of the shower plate 27.
  • the inner plate 64 a is formed in a substantially disc shape and is surrounded by the inner peripheral surface 61 at a position spaced from the inner peripheral surface 61.
  • the four connecting portions 64b project radially from the outer peripheral surface of the inner plate 64a and connect the inner plate 64a and the inner peripheral surface 61.
  • the four first passages 55 of the passage 50B are respectively formed between the inner peripheral surface 61, the outer peripheral surface of the inner plate 64a, and the two connection portions 64b.
  • the second passage 56 of the passage 50 ⁇ / b> B is formed inside the inner peripheral surface 61.
  • the passage 50 ⁇ / b> C includes four first openings 51.
  • the second passage 56 of the passage 50 ⁇ / b> C is connected to the four first passages 55.
  • the first openings 51 of the passage 50C are each formed in a circular shape.
  • the four circular first openings 51 are spaced apart from each other in the circumferential direction.
  • each of the first passages 55 of the passage 50C extends in a direction obliquely intersecting the Z axis.
  • the direction in which the first passage 55 extends in the passage 50C is a direction that approaches the other passage 50 adjacent to the passage 50C in the XY plane (substantially horizontal direction) as the distance from the fourth surface 27b increases.
  • the cross-sectional area of the first passage 55 of the passage 50C is substantially constant.
  • the second opening 52 of the passage 50C is formed in a circular shape.
  • the second passage 56 of the passage 50C is formed in a columnar shape extending in the direction along the Z axis.
  • the cross-sectional area of the second passage 56 of the passage 50C is substantially constant.
  • the cross-sectional area of the second passage 56 is wider than the sum of the cross-sectional areas of the four first passages 55.
  • the cross-sectional area of the second passage 56 in the second opening 52 is wider than the sum of the cross-sectional areas of the four first passages 55 in the first opening 51.
  • the cross-sectional area of the second opening 52 is wider than the sum of the cross-sectional areas of the four first openings 51.
  • the second passage 56 of the passage 50C is a hole having a bottom 56a.
  • the four first passages 55 of the passage 50C connect the bottom 56a of the second passage 56 and the first opening 51 that opens to the fourth surface 27b of the shower plate 27.
  • a plurality of passages 50 ⁇ / b> A are provided in the center of the shower plate 27.
  • the plurality of passages 50B are arranged so as to surround the plurality of passages 50A.
  • the plurality of passages 50C are arranged so as to surround the plurality of passages 50A and the plurality of passages 50B.
  • the plurality of passages 50A, 50B, and 50C may be arranged at positions different from those in FIG.
  • the shape of the passage 50A, the shape of the passage 50B, and the shape of the passage 50C are different from each other.
  • one shape of the plurality of passages 50 is different from the other shape of the plurality of passages 50.
  • the plurality of passages 50 may include only a plurality of passages 50A, a plurality of passages 50B, or a plurality of passages 50C.
  • the length of the first passage 55 of the passage 50A, the length of the first passage 55 of the passage 50B, and the length of the first passage 55 of the passage 50C are different from each other.
  • the pump 13 in FIG. 1 supplies the gas G to the plurality of passages 50 of the shower plate 27 configured as described above.
  • the pump 13 supplies the gas G to the supply chamber 39 through the supply port 31, the diffusion chamber 35, and the plurality of holes 37 of the diffusion plate 26.
  • the gas G in the supply chamber 39 is supplied to the second passages 56 of the plurality of passages 50.
  • the shower plate 27 supplies the gas G supplied from the pump 13 to the plurality of passages 50 from the first passage 55 of the plurality of passages 50 to the fourth surface 27b of the shower plate 27 and the support portion 25a of the stage 25. It discharges to the space S between the wafer W supported.
  • the gas G discharged from the first passage 55 will be described in detail.
  • each first opening 51 of each of the plurality of passages 50 ⁇ / b> A faces intersects with the direction in which at least one first opening 51 of the other plurality of passages 50 faces.
  • the direction in which each first opening 51 of each of the plurality of passages 50 ⁇ / b> A faces is overlapped at one point with the direction in which at least one of the other passages 50 faces.
  • the first opening 51 is an example of a portion that opens to the outer surface of the first passage.
  • the direction in which the first opening 51 faces is an example of the direction in which the first passage opens toward the outer surface.
  • the direction in which the first opening 51 faces is the direction in which the first passage 55 faces in the first opening 51 (fourth surface 27b). According to another expression, the direction in which the first opening 51 faces is the direction in which the first passage 55 opens toward the fourth surface 27b. That is, the direction in which the first passage 55 obtained as described above extends linearly extends from the first opening 51 (fourth surface 27b).
  • the gas G is discharged from each of the first passages 55 of the plurality of passages 50A in a direction corresponding to the gas G discharged from at least one of the first passages 55 of the other plurality of passages 50.
  • the first passage 55 of one passage 50A discharges the gas G in a direction corresponding to the gas G discharged from the first passage 55 of the other passage 50A adjacent to the passage 50A.
  • the first passage 55 of the passage 50A may discharge the gas G in a direction corresponding to the gas G discharged from the first passage 55 of the other passage 50 farther than the passage 50 adjacent to the passage 50A. good.
  • each first opening 51 of each of the plurality of passages 50 ⁇ / b> B faces intersects with the direction in which at least one first opening 51 of the other plurality of passages 50 faces.
  • the direction in which each first opening 51 of each of the plurality of passages 50B faces overlaps the direction in which at least one first opening 51 of the other plurality of passages 50 faces at one point.
  • the gas G is discharged from each of the first passages 55 of the plurality of passages 50B in a direction corresponding to the gas G discharged from at least one of the first passages 55 of the other plurality of passages 50.
  • the first passage 55 of one passage 50B discharges the gas G in a direction corresponding to the gas G discharged from the first passage 55 of the other passage 50B adjacent to the passage 50B.
  • the first passage 55 of the passage 50B may discharge the gas G in a direction corresponding to the gas G discharged from the first passage 55 of the other passage 50 farther than the passage 50 adjacent to the passage 50B. good.
  • each first opening 51 of each of the plurality of passages 50 ⁇ / b> C faces intersects with the direction in which at least one first opening 51 of the other plurality of passages 50 faces.
  • the direction in which each first opening 51 of each of the plurality of passages 50C faces overlaps with the direction in which at least one of the plurality of other passages 50 faces, at one point.
  • the gas G is discharged from each of the first passages 55 of the plurality of passages 50C in a direction corresponding to the gas G discharged from at least one of the first passages 55 of the other plurality of passages 50.
  • the first passage 55 of one passage 50C discharges the gas G in a direction corresponding to the gas G discharged from the first passage 55 of the other passage 50C adjacent to the passage 50C.
  • the first passage 55 of the passage 50C may discharge the gas G in a direction corresponding to the gas G discharged from the first passage 55 of the other passage 50 farther than the passage 50 adjacent to the passage 50C. good.
  • the shower plate 27 allows the gas G discharged from each of the first passages 55 of the plurality of passages 50 to be out of the first passages 55 of the other plurality of passages 50 before the gas G reaches the wafer W.
  • the gas G is discharged from at least one of them.
  • the gas G discharged from one first passage 55 and the gas G discharged from at least one other first passage 55 include the fourth surface 27b of the shower plate 27, the wafer W, and the like. Clash with each other.
  • the traveling directions of the gases G are dispersed.
  • the flow rate of the gas G after the collision is slower than the flow rate of the gas G when discharged from the first passage 55.
  • the gas G after the collision reaches the wafer W and generates a film on the surface of the wafer W.
  • the semiconductor manufacturing apparatus 10 is a plasma CVD apparatus, the gas G is converted into plasma in the space S.
  • the flow velocity and flow rate of the gas G reaching the surface of the wafer W are approximately uniform on the surface of the wafer W. For this reason, the amount of the gas G that chemically reacts on the surface of the wafer W is approximately uniform, and the thickness of the film generated on the surface of the wafer W is also approximately uniform.
  • the length of the first passage 55 in the passages 50A, 50B, and 50C and the arrangement of the passages 50A, 50B, and 50C are set so that the thickness of the film generated on the surface of the wafer W becomes more uniform.
  • the longer the length of the first passage 55, the lower the conductance of the first passage 55 and the higher the pressure resistance is adjusted by adjusting the length of the first passage 55.
  • the shower plate 27 is layered and formed by, for example, a 3D printer. For this reason, the shower plate 27 is formed as an integral body.
  • the shower plate 27 may be formed by other methods.
  • the direction in which each first opening 51 of the plurality of first passages 55 faces is at least one of the other plurality of first passages 55. At least one point overlaps the direction in which the first opening 51 faces. For example, the direction in which each first opening 51 of the plurality of first passages 55 faces and the direction in which at least one first opening 51 of the other plurality of first passages 55 faces each other. . Further, when the gas G is discharged from the plurality of first passages 55, the gas G is discharged from at least one of the plurality of first passages 55 from each of the plurality of first passages 55. The gas is discharged in the direction hitting the gas G.
  • the direction in which the first openings 51 of the plurality of first passages 55 face is set independently (individually) so that the thickness of the film formed on the wafer W becomes more uniform.
  • the distance between the wafer W and the shower plate 27 is increased. In this case, a large amount of gas G is supplied to the large space S. Therefore, the replacement efficiency of the gas G relating to the time for supplying and discharging the gas G in the chamber 21 and the utilization efficiency of the gas G relating to the amount of the gas G with respect to the thickness of the film formed on the wafer W are reduced. To do.
  • the distance between the wafer W and the shower plate 27 can be reduced, and a decrease in the replacement efficiency and utilization efficiency of the gas G is suppressed.
  • Each cross-sectional area of the plurality of second passages 56 is wider than the sum of the cross-sectional areas of the first passages 55 connected to the second passages 56. Thereby, the pressure resistance in the first passage 55 is high and the conductance is low, and the gas G is discharged from the plurality of first passages 55 more uniformly. Therefore, for example, when the shower plate 27 discharges the gas G, which is a CVD source gas, the thickness of the film formed on the wafer W is suppressed from becoming uneven.
  • Each of the plurality of second passages 56 is connected to at least two of the plurality of first passages 55. Thereby, the number of the first passages 55 is larger than the number of the second passages 56. That is, when the gas G is discharged from many positions, for example, when the shower plate 27 discharges the gas G that is a CVD source gas, the thickness of the film formed on the wafer W is suppressed from becoming uneven. .
  • One shape of the plurality of first passages 55 is different from the other shape of the plurality of first passages 55.
  • each shape of the first passage 55 is set so as to have conductance and pressure resistance corresponding to various conditions including pre- and post-processes such as chemical mechanical polishing (CMP). Therefore, for example, when the shower plate 27 discharges the gas G, which is a CVD source gas, the thickness of the film formed on the wafer W is suppressed from becoming uneven.
  • CMP chemical mechanical polishing
  • the length of one of the plurality of first passages 55 is different from the length of the other one of the plurality of first passages 55.
  • path 55 is set so that it may have conductance and pressure resistance according to various conditions, such as a back-and-forth process. Therefore, for example, when the shower plate 27 discharges the gas G, which is a CVD source gas, the thickness of the film formed on the wafer W is suppressed from becoming uneven.
  • the shower plate 27 discharges the gas G discharged from each of the plurality of first passages 55 from at least one of the other plurality of first passages 55 before the gas G reaches the wafer W. It is comprised so that it may hit against the gas G to be performed. Thereby, it is suppressed that the gas G discharged from the first passage 55 directly hits the wafer W. Therefore, for example, when the shower plate 27 discharges the gas G, which is a CVD source gas, the thickness of the film formed on the wafer W is suppressed from becoming uneven.
  • FIG. 9 is a plan view of the shower plate 27 showing the passage 50C according to the second embodiment.
  • FIG. 10 is a cross-sectional view of the shower plate 27 showing the passage 50C of the second embodiment.
  • a plurality of grooves 71 are provided in the fourth surface 27 b of the shower plate 27.
  • the groove 71 is recessed from the fourth surface 27b and has a bottom.
  • the groove 71 extends between at least two of the plurality of first passages 55 opened in the fourth surface 27b.
  • the groove 71 extends between one first passage 55 of one passage 50C and one first passage 55 of another passage 50C adjacent to the one passage 50C.
  • the gas G discharged from the first passage 55 of the passage 50C is basically discharged in the direction in which the first opening 51 of the first passage 55 faces. Further, a part of the gas G discharged from the first passage 55 of the passage 50 ⁇ / b> C flows in a direction along the groove 71.
  • the gas G is discharged from the first passage 55 of the two passages 50C connected by the groove 71.
  • the gases G flow along the grooves 71 and collide with each other.
  • the gas G collides with the inside of the groove 71 and in the vicinity of the groove 71.
  • the inside of the groove 71 and the vicinity of the groove 71 are part of the space S.
  • the groove 71 provided in the fourth surface 27b is between at least two of the plurality of first passages 55 opened in the fourth surface 27b. It extends at. Thereby, the gas G discharged from the first passage 55 flows along the groove 71 and easily collides with the gas G discharged from the other first passage 55.
  • FIG. 11 is a plan view of the shower plate 27 showing the passage 50D according to the third embodiment.
  • FIG. 12 is a cross-sectional view of the shower plate 27 showing the passage 50D of the third embodiment.
  • the plurality of passages 50 include a plurality of passages 50D.
  • the plurality of passages 50 may include at least one of the passages 50A, 50B, and 50C of the first embodiment, or may include only the passage 50D.
  • the shower plate 27 has a plurality of convex portions 81. Each of the plurality of convex portions 81 protrudes from the fourth surface 27 b of the shower plate 27.
  • the plurality of convex portions 81 are arranged apart from each other.
  • Each of the plurality of convex portions 81 has a peripheral wall 82 and an end wall 83.
  • the peripheral wall 82 is formed in a cylindrical shape extending in the direction along the Z axis.
  • the peripheral wall 82 may be formed in other shapes such as a polygonal cylindrical shape.
  • An end portion in the positive direction along the Z-axis of the peripheral wall 82 is connected to the fourth surface 27b.
  • the peripheral wall 82 has an outer peripheral surface 82a.
  • the outer peripheral surface 82a is a cylindrical outer surface that faces in a direction orthogonal to the Z axis.
  • the outer peripheral surface 82 a faces the space S and forms part of the outer surface of the shower plate 27. That is, the outer peripheral surface 82a is an example of an outer surface.
  • the end wall 83 closes the end of the peripheral wall 82 in the negative direction along the Z axis.
  • the end wall 83 has a bottom surface 83a.
  • the bottom surface 83a is a substantially flat surface facing in the negative direction along the Z axis.
  • the bottom surface 83a faces the space S and forms a part of the outer surface of the shower plate 27. That is, the bottom surface 83a is an example of an outer surface.
  • the outer peripheral surface 82a and the bottom surface 83a of the convex portion 81 form part of the outer surface of the shower plate 27.
  • first passages 55 of the passage 50D open on the outer peripheral surface 82a of the peripheral wall 82.
  • the four first openings 51 are provided on the outer peripheral surface 82 a of the peripheral wall 82.
  • the first passage 55 extends in a direction (substantially horizontal direction) orthogonal to the Z axis.
  • the first opening 51 of the first passage 55 faces in a direction orthogonal to the Z axis. Note that the first opening 51 may face in another direction.
  • the direction in which the first opening 51 of the passage 50D faces is the direction in which the first passage 55 opens toward the outer peripheral surface 82a.
  • the second opening 52 of the passage 50D is formed in a circular shape.
  • the second passage 56 of the passage 50D is formed in a columnar shape extending in the direction along the Z axis.
  • the cross-sectional area of the second passage 56 of the passage 50D is substantially constant.
  • the passage 50D has a third passage 85.
  • the third passage 85 is surrounded by the peripheral wall 82 and the end wall 83.
  • the third passage 85 is formed by the inner surface of the peripheral wall 82 and the inner surface of the end wall 83.
  • the four first passages 55 that open to the outer peripheral surface 82 a are connected to the third passage 85.
  • the second passage 56 that opens to the third surface 27 a is also connected to the third passage 85.
  • the third passage 85 is interposed between the four first passages 55 and the second passage 56.
  • the third passage 85 is formed in a columnar shape extending in the direction along the Z axis.
  • Four first passages 55 are connected to the peripheral surface portion of the cylindrical third passage 85, and the second passage 56 is connected to an end surface portion of the third passage 85.
  • the cross-sectional area of the third passage 85 is substantially constant and is smaller than the cross-sectional area of the second passage 56.
  • the third passage 85 may have other shapes.
  • the cross-sectional area of the third passage 85 is wider than the sum of the minimum cross-sectional areas of the four first passages 55.
  • the cross-sectional area of the third passage 85 at the connection portion between the second passage 56 and the third passage 85 is wider than the sum of the cross-sectional areas of the four first passages 55 in the first opening 51.
  • One of the four first passages 55 that open to the outer peripheral surface 82 a of the peripheral wall 82 faces one of the four first passages 55 that open to the outer peripheral surface 82 a of the other peripheral wall 82.
  • the first openings 51 of the two first passages 55 face each other. For this reason, the direction in which each of the plurality of first passages 55 is overlapped with the direction in which one of the other plurality of first passages 55 is facing.
  • the gas G is discharged from the first passage 55 of the two passages 50D facing each other.
  • the gas G collides with each other between the two convex portions 81.
  • a space between the two convex portions 81 is a part of the space S.
  • the plurality of first passages 55 open to the peripheral walls 82 of the plurality of convex portions 81.
  • the shower plate 27 discharges the gas G which is a CVD source gas
  • the gases G discharged from the plurality of first passages 55 collide more reliably before reaching the wafer W. . Therefore, the thickness of the film formed on the wafer W can be suppressed from becoming uneven.
  • One of the plurality of first passages 55 opening in the peripheral wall 82 faces one of the plurality of first passages 55 opening in the other peripheral wall 82.
  • the two first passages 55 face each other.
  • the first passage 55 of the passage 50D may further open on the bottom surface 83a of the end wall 83.
  • the plurality of first openings 51 may be provided on the outer peripheral surface 82 a of the peripheral wall 82 and the bottom surface 83 a of the end wall 83.
  • at least one of the plurality of first passages 55 is provided in the end wall 83 and extends in a direction along the Z axis or in a direction obliquely intersecting with the Z axis.
  • the first opening 51 formed in the bottom surface 83a of the end wall 83 faces in a direction along the Z axis or in a direction obliquely intersecting the Z axis. Note that the first opening 51 formed in the bottom surface 83a may face in another direction.
  • the direction in which the first opening 51 formed in the bottom surface 83a faces is the direction in which the first passage 55 provided in the end wall 83 opens toward the bottom surface 83a.
  • the gas G is also supplied under the end wall 83, and the thickness of the film formed on the wafer W is suppressed from becoming uneven. Furthermore, the total cross-sectional area of the first opening 51 formed on the bottom surface 83a of the end wall 83 is smaller than the total cross-sectional area of the first opening 51 formed on the outer peripheral surface 82a of the peripheral wall 82, for example. As a result, the amount of the gas G flowing directly toward the wafer W is reduced, and the thickness of the film formed on the wafer W is suppressed from becoming uneven.
  • FIG. 13 is a cross-sectional view of the shower plate 27 showing the passage 50E according to the fourth embodiment.
  • the plurality of passages 50 include a plurality of passages 50E.
  • the plurality of passages 50 may include at least one of the passages 50A, 50B, 50C, and 50D of the first to third embodiments, or may include only the passage 50E.
  • the first passage 55 of the passage 50E extends in a spiral shape. In other words, the first passage 55 of the passage 50E extends in a curved shape.
  • the length of the first passage 55 of one passage 50E is different from the length of the first passage 55 of the other passage 50E.
  • the number of turns of one spiral first passage 55 is different from the number of turns of the other spiral first passage 55.
  • the cross-sectional area of the first passage 55 of the passage 50E is substantially constant.
  • the direction in which each first opening 51 of each of the plurality of passages 50E faces intersects with the direction in which at least one first opening 51 of the other plurality of passages 50 faces.
  • the direction in which each first opening 51 of each of the plurality of passages 50E faces overlaps with the direction in which at least one first opening 51 of the other plurality of passages 50 faces at one point.
  • the first opening 51 is an example of a portion that opens to the outer surface of the first passage.
  • the direction in which the first opening 51 faces is the direction in which the first passage 55 faces in the first opening 51 (fourth surface 27b). That is, the direction in which the first passage 55 obtained as described above extends linearly extends from the first opening 51 (fourth surface 27b).
  • each of the first passages 55 of the passage 50E extends in a spiral shape, it extends in a direction obliquely intersecting the Z axis.
  • the direction in which the first opening 51 of the other passage 50 faces even if the direction in which the first passage 55 of the passage 50E extends linearly at a position closer to the second opening 52 than the first opening 51 It does not always overlap with one point.
  • the first opening 51 if the direction in which the first passage 55 of the passage 50E extends is linearly extended, the first opening 51 overlaps with the direction in which the first opening 51 of the other passage 50 faces at one point. Therefore, the gas G exhausted from the first passage 55 of the passage 50E and the gas G exhausted from at least one other first passage 55 include the fourth surface 27b of the shower plate 27, the wafer W, and the like. Clash with each other.
  • At least one of the plurality of first passages 55 extends in a spiral shape. Thereby, even if the thickness of the shower plate 27 is constant, the length of one of the plurality of first passages 55 is different from the length of the other one of the plurality of first passages 55. Easy to set. Therefore, for example, the shape of each first passage 55 can be easily set so as to have conductance and pressure resistance in accordance with various conditions such as before and after processes.
  • the gas G that has passed through the hole 37 of the diffusion plate 26 is discharged from the plurality of passages 50 of the shower plate 27 into the space S.
  • the semiconductor manufacturing apparatus 10 is not limited to this, and the diffusion plate 26 may not be provided.
  • a flow path that connects the supply port 31 and the plurality of passages 50 and distributes the gas G to the plurality of passages 50 may be formed inside the shower plate 27.
  • the fluid is discharged from each of the plurality of first passages in a direction corresponding to the fluid discharged from at least one of the plurality of other first passages. .
  • the distribution of the fluid in the space where the fluid is discharged becomes more uniform.

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Abstract

La présente invention porte, selon un mode de réalisation, sur une structure de trajet d'écoulement qui est pourvue d'un élément. L'élément comporte une surface externe et est pourvu d'une pluralité de premiers trajets ouverts sur la surface externe. Au moment du déchargement du fluide à partir de la pluralité de premiers trajets, le fluide est déchargé à partir de chaque trajet de la pluralité de premiers trajets dans la direction dans laquelle le fluide frappe le fluide déchargé à partir d'au moins un premier trajet de la pluralité restante de premiers trajets.
PCT/JP2017/023421 2016-07-15 2017-06-26 Structure de trajet d'écoulement et dispositif de traitement Ceased WO2018012267A1 (fr)

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JPH09186140A (ja) * 1995-10-16 1997-07-15 Applied Materials Inc プラズマプロセスリアクタのガスインジェクションスリットノズル
JP2003243365A (ja) * 2002-02-20 2003-08-29 Hitachi High-Technologies Corp プラズマエッチング方法
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CN110391120B (zh) * 2018-04-17 2022-02-22 北京北方华创微电子装备有限公司 一种喷头和等离子体处理腔室

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