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WO2017061498A1 - Mélangeur et dispositif de traitement sous vide - Google Patents

Mélangeur et dispositif de traitement sous vide Download PDF

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Publication number
WO2017061498A1
WO2017061498A1 PCT/JP2016/079681 JP2016079681W WO2017061498A1 WO 2017061498 A1 WO2017061498 A1 WO 2017061498A1 JP 2016079681 W JP2016079681 W JP 2016079681W WO 2017061498 A1 WO2017061498 A1 WO 2017061498A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
cylinder
mixing container
main body
mixer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/079681
Other languages
English (en)
Japanese (ja)
Inventor
慎太郎 田宮
洋介 神保
阿部　洋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to KR1020187009489A priority Critical patent/KR102159868B1/ko
Priority to JP2017527376A priority patent/JP6216483B2/ja
Priority to CN201680058354.9A priority patent/CN108138321B/zh
Publication of WO2017061498A1 publication Critical patent/WO2017061498A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/50—Mixing receptacles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • the present invention relates to a technical field of a gas mixer and a vacuum processing apparatus using the mixer.
  • the amount of gas supplied from the low pressure gas source decreases due to pressure loss.
  • the gas flow rate ratio deviates from a desired value.
  • one gas is a gas at normal temperature and pressure
  • the gas source of the gas is a cylinder
  • the other gas is a gas material generated by sublimation or evaporation by heating a solid or liquid source material.
  • the growth rate of the thin film decreases when the supply amount of the gaseous raw material decreases.
  • a method of using a rectangular parallelepiped container as a mixing container, connecting pipes through which different types of gas flow to the mixing container, mixing two kinds of gas by the vortex generated in the mixing container, and taking out the mixed gas with a single pipe There is an advantage that the pressure loss is small.
  • the degree of mixing is affected and there is a problem that the two types of gases are not uniformly mixed.
  • the two types of gases are located in different regions within the mixing vessel, and when a thin film is formed with the obtained mixed gas, the film thickness Only thin films with poor distribution can be obtained.
  • a plasma CVD method using TEOS as a raw material has been widely used as a material for a SiO 2 film used for a semiconductor element.
  • a TEOS gas and an oxygen gas are mixed inside a mixing vessel, the plasma is converted into plasma.
  • the gas pressure is determined by the vapor pressure and temperature of the substance.
  • the vapor pressure of liquid TEOS is difficult to ensure a value of 2600 Pa or higher, so the differential pressure between the pressure at the TEOS gas generation site and the pressure in the mixing vessel is small. Although it is easy to increase the flow rate of the filled oxygen gas, it is difficult to increase the flow rate of the TEOS gas.
  • Prior art using a mixing vessel is described in the following document.
  • the present invention was created to solve the above-described disadvantages of the prior art, and an object thereof is to provide a mixer capable of uniformly mixing two kinds of gases and a vacuum processing apparatus using the mixer. It is in.
  • the present invention provides a mixing container in which an internal space is separated from an external atmosphere, and a cylindrical first in which a first gas introduced to the root side flows out from a first cylinder opening on the tip side.
  • the first cylinder opening is disposed in the mixing container so as to be separated from the wall surface of the mixing container facing the first cylinder opening, and at least a part of the second cylinder main body is the second cylinder main body.
  • the outer peripheral side surface of the first cylindrical main body is disposed in contact with the inner peripheral side surface of the first cylindrical main body, the inner peripheral side surface of the first cylindrical main body and the outer peripheral surface of the second cylindrical main body.
  • the first gas is allowed to flow through a gap between side surfaces, and the second cylinder opening is formed inside the first cylinder body.
  • the first cylinder opening is arranged at a position closer to the second cylinder opening than the wall surface of the mixing container facing the first cylinder opening, and the first and second gases are
  • the mixed gas generated by mixing the first and second gases is discharged from the outlet to the outside of the mixing container. It is a mixer.
  • the first cylinder main body and the second cylinder main body are respectively extended along straight lines parallel to each other, and flow out from the first cylinder opening into the mixing container and advance straight. It is a mixer in which the outflow port is arranged so that the first gas and the second gas flowing out into the mixing container from the second cylinder opening and going straight forward do not enter the outflow port.
  • the outlet is a wall surface of a portion where a virtual cylinder obtained by virtually extending an outer peripheral side surface of the first cylinder body in a direction in which the first cylinder body extends and a wall surface of the mixing container intersect. It is a mixer provided in the said wall surface of the outer side of a crossing part.
  • the outlet is at least at a position where a virtual cylinder obtained by virtually extending an outer peripheral side surface of the first cylinder main body in a direction in which the first cylinder main body extends and a wall surface of the mixing container intersect.
  • a mixer in which a part is arranged and a baffle plate member is provided between the first cylinder opening and the outlet.
  • the mixing container is a rectangular parallelepiped, and wall surfaces of four walls among the six walls of the mixing container are arranged in parallel with the outer periphery of the first cylinder body, and the outer peripheral side surface of the first cylinder body It is a mixer faced with.
  • the present invention is a mixer in which the first cylinder main body and the second cylinder main body have circular inner cross-sectional shapes.
  • the present invention includes a gas supply device, a mixer, a gas transfer pipe, a vacuum chamber, and a gas discharge device, and the first gas and the second gas are introduced from the gas supply device into the mixer.
  • the first gas and the second gas are mixed in the mixer to generate a mixed gas, and the generated mixed gas is transferred from the mixer to the gas discharge device by the gas transfer pipe,
  • a vacuum processing apparatus in which an object to be processed, which is discharged from the gas releasing apparatus into the vacuum chamber and disposed inside the vacuum chamber, is vacuum-processed, and the mixer has an internal space in an external atmosphere.
  • An outlet that is connected to the gas transfer pipe, and the first cylinder opening is spaced apart from a wall surface of the mixing container facing the first cylinder opening.
  • at least a part of the second cylinder main body is arranged inside the first cylinder main body in a state where the outer peripheral side surface of the second cylinder main body is not in contact with the inner peripheral side surface of the first cylinder main body.
  • the first gas flows through a gap between an inner peripheral side surface of the first cylinder main body and an outer peripheral side surface of the second cylinder main body, and the second cylinder opening is formed inside the first cylinder main body.
  • the first cylinder opening is arranged at a position closer to the second cylinder opening than the wall surface of the mixing container facing the first cylinder opening, and the first and second gases are It is discharged into the mixing container through one cylinder opening and mixed in the mixing container, and the first and second gas are mixed.
  • There mixed gas produced is mixed is a vacuum processing apparatus which flows into the interior of the gas transfer pipe from the outlet.
  • the gas supply device includes a gas generation container in which a raw material is arranged, and a heating device that heats the raw material in the gas generation container, and the first gas or the second gas
  • the source material is heated by the heating device, the source gas generated by sublimation or evaporation is supplied to the mixing container, and the other gas is a gas that is a gas at least at normal temperature and pressure.
  • It is a vacuum processing apparatus supplied to the said mixing container.
  • a thin film is formed on the surface of an object to be processed disposed inside the vacuum chamber by a chemical reaction between the first gas and the second gas contained in the mixed gas discharged into the vacuum chamber. Vacuum processing apparatus.
  • the present invention is a vacuum processing apparatus provided with a plasma apparatus for converting the mixed gas supplied from the mixer into plasma.
  • the first cylinder main body and the second cylinder main body are respectively extended along straight lines parallel to each other, and flow out from the first cylinder opening into the mixing container and advance straight.
  • the vacuum processing apparatus in which the outflow port is arranged so that the first gas and the second gas flowing out from the second cylinder opening into the mixing container and traveling straight do not enter the outflow port.
  • the outlet is a wall surface of a portion where a virtual cylinder obtained by virtually extending an outer peripheral side surface of the first cylinder body in a direction in which the first cylinder body extends and a wall surface of the mixing container intersect.
  • the outlet is a wall surface of a portion where a virtual cylinder obtained by virtually extending an outer peripheral side surface of the first cylinder body in a direction in which the first cylinder body extends and a wall surface of the mixing container intersect.
  • the vacuum processing apparatus is arranged so that at least a part of the crossing portion overlaps, and a baffle plate member is provided between the first cylinder opening and the outlet.
  • the mixing container is a rectangular parallelepiped, and wall surfaces of four walls among the six walls of the mixing container are arranged in parallel with the outer periphery of the first cylinder body, and the outer peripheral side surface of the first cylinder body It is a vacuum processing apparatus that faces.
  • the present invention is a vacuum processing apparatus in which the first cylinder main body and the second cylinder main body have circular inner cross-sectional shapes.
  • the mixer of the present invention can uniformly mix different types of first gas and second gas introduced into the mixer.
  • the mixer of the present invention can uniformly mix the first gas and the second gas even when the flow rate difference between the first gas and the second gas is large.
  • the vacuum processing apparatus of the present invention can uniformly vacuum process the surface of the processing object.
  • symbol 2 of Fig.1 (a) has shown the vacuum processing apparatus of this invention.
  • the vacuum processing apparatus 2 has a vacuum tank 24, and the vacuum tank 24 is provided with a discharge device 19, a gas supply device 4, and a mixer 3 according to the first embodiment of the present invention. Yes.
  • An evacuation device 33 is connected to the vacuum chamber 24, and when the inside of the vacuum chamber 24 is evacuated by the evacuation device 33, the inside of the mixer 3 is also evacuated.
  • the mixer 3 and the gas supply device 4 are disposed outside the vacuum chamber 24.
  • the gas supply device 4 includes an auxiliary raw material gas supply device 8 and a main raw material gas supply device 9.
  • the auxiliary raw material gas supply device 8 is a gas cylinder here, and the auxiliary raw material gas supply device 8 has a normal temperature (“normal temperature” means a temperature of 5 ° C. to 35 ° C .: Japanese Industrial Standard JIS Z 8703).
  • the main raw material gas supply device 9 includes a gas generation container 5, a raw material 6, and a heating device 7.
  • the raw material 6 is disposed inside the gas generation container 5.
  • the gas generation container 5 is heated by the heating device 7 in a state where the inside of the gas generation container 5 is evacuated by the vacuum exhaust device 33,
  • a main raw material gas that is a gas of the raw material 6 is generated by sublimation or evaporation.
  • the source material 6 may be directly heated by the heating device 7 to generate a main source gas that is a gas of the source material 6 by sublimation or evaporation.
  • One of the auxiliary source gas supply device 8 and the main source gas supply device 9 is connected to the mixer 3 by the first pipe 26, and the other device is connected to the mixer 3 by the second pipe 27.
  • One of the auxiliary raw material gas supplied from the auxiliary raw material gas supply device 8 and the main raw material gas supplied from the main raw material gas supply device 9 serves as the first gas as the first pipe. 26 is supplied to the mixer 3, and the other gas is supplied to the mixer 3 through the second pipe 27 as the second gas.
  • the inside of the vacuum chamber 24 and the inside of the mixer 3 are evacuated by the evacuation device 33, and even if the first and second gases are supplied to the mixer 3, the inside of the mixer 3 and the vacuum chamber 24 remains A vacuum atmosphere is maintained.
  • FIG. 2 shows the structure of the mixer 3.
  • the mixer 3 has a mixing container 10 in which the internal space is separated from the external atmosphere, and the internal space of the mixing container 10 has a cylindrical first cylinder body 11 that is hollow inside and circular in cross section. Is arranged.
  • a cylindrical second cylinder body 12 that is hollow inside and circular in cross section is disposed inside the cylindrical shape of the first cylinder body 11.
  • the mixing container 10 is a rectangular parallelepiped, and two surfaces having the maximum area and parallel to each other among the four surfaces extending in the longitudinal direction are horizontally arranged.
  • the 1st cylinder main body 11 and the 2nd cylinder main body 12 are arrange
  • FIG. 2 is a horizontal cross-sectional view of the mixer 3, and is a view when the cross-section is viewed from above.
  • the mixer 3 of this embodiment has a small chamber 21, the first pipe 26 is connected to the small chamber 21, and the first gas that has passed through the first pipe 26 is introduced into the interior 22 of the small chamber 21 that has been evacuated. It has become so.
  • a small hole 23 is provided in the wall of the small chamber 21, and one end of the first cylinder main body 11 is fixed to the wall of the small chamber 21 so that a hollow portion of the first cylinder main body 11 is connected to the small hole 23.
  • the other end of the first cylinder body 11 is disposed inside the mixing container 10.
  • the inside of the small chamber 21 is connected to the inside of the mixing container 10 by the first cylinder body 11, and the first gas introduced into the small chamber 21 by the first pipe 26 passes through the first pipe 26 and is mixed. It is supplied to the inside of the container 10.
  • the inside of the small chamber 21 is separated from the inside of the mixing container 10 in portions other than the first cylinder body 11.
  • the wall in contact with the atmosphere outside the mixing container 10 is the wall of the small chamber 21, and the first and second introduction ports 37 and 38 are formed on the wall of the small chamber 21. Is provided.
  • the tip of the first pipe 26 is connected to a first inlet 37, and the first gas that has passed through the first pipe 26 is introduced into the interior 22 of the small chamber 21 from the first inlet 37.
  • the small hole 23 is formed in the wall of the small chamber 21 in contact with the atmosphere inside the mixing container 10.
  • the second cylinder main body 12 is inserted through the second introduction port 38 and the small hole 23, and at least a part of the distal end side of the second cylinder main body 12 is positioned inside the first cylinder main body 11.
  • a gap 47 is formed between the outer peripheral side surface of the first cylinder main body 11 and the inner peripheral side surface of the second cylinder main body 12.
  • the space between the edge portion of the first introduction port 37 and the tip of the first pipe 26 and the space between the edge portion of the second introduction port 38 and the outer peripheral surface of the second cylinder body 12 are hermetically sealed. Air is prevented from entering the inside and the inside of the mixing container 10 from the first and second introduction ports 37 and 38.
  • the outer peripheral side surface of the portion of the second cylinder main body 12 that is inserted into the first cylinder main body 11 and is located inside the first cylinder main body 11 is not in contact with the inner peripheral side surface of the first cylinder main body 11. ing.
  • a gap 47 formed between the inner peripheral side surface of the first cylinder main body 11 and the outer peripheral side surface of the second cylinder main body 12 is connected to the inner space of the small chamber 21 at the root side, and is introduced into the small chamber 21.
  • the first gas is introduced from the base side of the gap 47 into the gap 47 which is a portion between the outer peripheral side surface of the second cylinder main body 12 and the inner peripheral side surface of the first cylinder main body 11.
  • a first cylinder opening 45 is provided at the tip of the first cylinder body 11 located inside the mixing container 10, and a second cylinder opening 46 is provided at the tip of the second cylinder body 12. .
  • the base side of the second cylinder body 12 is connected to the second pipe 27, and the inside of the second cylinder body 12 and the inside of the second pipe 27 are connected via the second inlet 38.
  • the second gas passing through the second pipe 27 is introduced into the second cylinder body 12 from 38.
  • the second cylinder opening 46 is located in an inner hollow portion of the first cylinder main body 11, and the second gas flows out from the second cylinder opening 46 into the first cylinder main body 11.
  • the gap 47 is connected to the running space 48 around the second cylinder opening 46, and the first gas flowing through the gap 47 flows out from the portion of the gap 47 connected to the running space 48 into the running space 48.
  • the run-up space 48 is surrounded by the first cylinder body 11, and the first and second gases that have flowed into the run-up space 48 cannot spread.
  • the direction in which the first gas flowing out into the run-up space 48 flows is the same direction as when flowing through the gap 47, and the direction in which the second gas flowing out into the run-up space 48 flows also inside the second cylinder body 12. The direction is the same as when you were.
  • the first and second cylinder main bodies 11 and 12 are pipes having a constant thickness and are straightened, and the first gas inside the gap 47 goes straight along the direction in which the first cylinder main body 11 extends. Then, the second gas inside the second cylinder main body 12 goes straight along the direction in which the second cylinder main body 12 extends.
  • the first and second gases flow in the same direction as immediately before flowing into the approach space 48. Since the second gas flows inside the first gas flowing in a cylindrical shape, the second gas flows inside the run-up space 48 while being surrounded by the first gas. Flows out from the first tube opening 45 into the mixing container 10 while the second gas is wrapped in the first gas.
  • the first cylinder main body 11 Since the first cylinder main body 11 is not positioned around the first and second gases flowing out from the first cylinder opening 45, the flow of the first and second gases flowing out from the first cylinder opening 45 is widened. However, since the spread is small, it can be considered that the first and second gases flowing out from the first cylinder opening 45 go straight in the same direction as when flowing in the running space 48.
  • the shape of the gap 47 is a donut shape, and the first gas that has flowed out of the gap 47 flows around the second gas in the running space 48, and the second gas flows in a state surrounded by the first gas.
  • ing. 2 indicates a virtual cylinder which is a cylinder when the outer peripheral side surface of the first cylinder main body 11 is virtually extended in a direction in which the first cylinder main body 11 extends.
  • the virtual cylinder 29 goes straight in the extending direction.
  • the wall of the mixing vessel 10 is provided with an outlet 28 connected to one end of the gas transfer pipe 25.
  • the other end of the gas transfer pipe 25 is connected to the discharge device 19, and the internal space of the mixing container 10 and the internal space of the discharge device 19 are connected by the outlet 28 and the gas transfer pipe 25.
  • the virtual cylinder 29 intersects the wall surface of the mixing container 10 facing the first cylinder opening 45, and the outlet 28 is formed by intersecting the virtual cylinder 29 of the wall surface with the wall surface. It is provided on the wall surface of the portion located outside the crossing portion 14 which is a portion to be fixed.
  • the direction in which the first cylinder main body 11 extends and the direction in which the second cylinder main body 12 extends are parallel, and the first and second gases flowing out from the first cylinder opening 45 are parallel to the direction in which the first cylinder main body 11 extends. Go straight in the direction. The straight and first gas does not flow into the outlet 28.
  • the second gas flowing out from the first cylinder opening 45 flows in the mixing container 10 in a state of being wrapped by the first gas and collides with the wall surface where the virtual cylinder 29 intersects. Since the second gas that collided with the wall surface flows in four directions along the wall surface, the first gas that collided with the second gas flowing in the four directions does not collide with the wall surface due to the second gas spreading along the wall surface. Also starts to flow in all directions along the wall. As a result, both the first and second gases flowing out from the first cylinder opening 45 spread along the wall surface facing the first cylinder opening 45.
  • a donut-shaped mixing space 13 centering on the virtual cylinder 29 and the first cylinder main body 11 is provided.
  • this vortex is formed, the first and second gases flowing inside the mixing space 13 are uniformly mixed by forming the vortex, and a mixed gas is generated.
  • the generated mixed gas flows into the outlet 28 from the mixing space 13 and moves to the discharge device 19 through the gas transfer pipe 25.
  • the discharge device 19 has a discharge container 35 in which a cavity 39 is provided, and the mixed gas that has moved through the gas transfer pipe 25 is introduced into the cavity 39.
  • a base 31 is disposed inside the vacuum chamber 24, and a processing object 30 such as a substrate is disposed on the base 31.
  • a processing object 30 such as a substrate is disposed on the base 31.
  • At least one surface of the surface of the discharge container 35 is disposed inside the vacuum chamber 24, and the surface is directed in the direction in which the table 31 is located.
  • a plurality of discharge ports 36 are formed on the surface of the discharge container 35 directed in the direction in which the table 31 is located, and the mixed gas introduced into the cavity 39 is vacuumed from the discharge port 36 toward the processing object 30. It is discharged into the tank 24.
  • the discharge container 35 is connected to a plasma apparatus 34 constituted by a plasma power source.
  • the plasma apparatus 34 applies a voltage to the discharge container 35, plasma of a mixed gas is generated, and the first When the gas and the second gas chemically react to generate a solid, a thin film made of the solid generated on the surface of the object to be processed 30 grows.
  • the voltage output of the plasma device 34 is stopped, the valves provided in the first and second pipes 26 and 27 are closed, and the supply of the mixed gas into the vacuum chamber 24 is stopped.
  • the processing object 30 is moved to the outside of the vacuum chamber 24, the unprocessed processing object 30 is carried into the vacuum chamber 24, placed on the table 31, the valve is opened, and the discharge device 19 A mixed gas is supplied to the inside and a voltage is output from the plasma device 34 to form plasma of the mixed gas, thereby forming a thin film on the surface of the treatment object 30.
  • a mixed gas is generated from the first and second gases, plasma of the mixed gas is generated in a vacuum atmosphere, and thin films are formed on the plurality of objects to be processed 30.
  • the outflow port 28 is provided on the wall surface directly facing the first cylinder opening 45, but the outflow port 28 is provided with first and second gases that flow out of the first cylinder opening 45 and go straight. It may be arranged at a position where it does not flow, and may be arranged on a wall surface other than the wall surface where the virtual cylinder 29 intersects.
  • Reference numeral 2a in FIG. 1 (b) represents a vacuum processing apparatus of another example of the present invention.
  • the first and second cylinder openings 45a and 46a of the first and second cylinder bodies 11a and 12a are disposed inside the mixing container 10, and the outlet 28a is provided.
  • a mixer 3a of the second embodiment which is a modification of the mixer 3 of the first embodiment, provided on the wall surface perpendicular to the wall surface where the first cylinder opening 45a directly faces.
  • a TEOS gas generated by evaporating liquid TEOS (tetraethoxysilane: molecular weight 208.37) is usually used as the first gas.
  • oxygen gas O 2 : molecular weight 31.99
  • the oxygen gas filled in the cylinder is used as the first gas
  • the second gas is used as the second gas.
  • a TEOS gas generated by evaporating liquid TEOS is used.
  • FIG. 10 (a) shows the first and second cylinder main bodies 11a using the TEOS gas as the first gas and the oxygen gas as the second gas as an introduction example 1 to the mixer 3a of the second embodiment of FIG. , 12a, and the TEOS gas mass and the oxygen gas mass at a plurality of calculation locations inside the mixing container 10 when flowing into the outlet port 28a are calculated by distribution simulation.
  • TEOS gas mass fraction TEOS gas mass / (TEOS gas mass + oxygen gas mass) From this, the TEOS gas mass fraction at the calculation location inside the mixing vessel 10 was obtained, and the TEOS gas mass fraction distribution diagram of FIG.
  • Evaluation value (%) ⁇ (A ⁇ B) / (A + B) ⁇ 100 was used to calculate the evaluation value of the mass fraction distribution of the TEOS gas.
  • FIG. 10 (a) the outlet is omitted in FIG. 10 (a) and other figures showing the mass fraction distribution and the figures showing the boundary lines of the mass distribution stage described later.
  • the TEOS gas mass fraction values are shown in four stages. The relationship between these patterns and the TEOS gas mass fraction is shown in FIG.
  • the mass fraction distribution diagram of FIG. 10 (a) is obtained by assuming that the oxygen gas flows into the first or second cylinder body 11a, 12a at a larger flow rate than the TEOS gas. Then, the flow rate ratio of TEOS gas and O 2 gas is 12: 600, and the inside of the mixing container 10 is 2000 Pa, and the mass fraction distribution in the mixing container 10 is calculated.
  • the TEOS gas and oxygen gas of the following examples and comparative examples were introduced into the first and second cylinder bodies 11a and 12a at the same pressure as in FIG. Yes.
  • the first gas and the second gas are uniformly mixed by the vortex formed in the mixing space 13.
  • the evaluation value of the mass fraction distribution of the TEOS gas in the mixed gas supplied from the outlet port 28a is a value of ⁇ 0.48%.
  • FIG. 10B shows the distance between the first and second cylinder main bodies 11a and 12a and the wall surface, and the boundary between the adjacent TEOS gas mass fraction values when the pattern is removed from FIG. 10A. A line is shown.
  • the first and second gases flow a distance of 42.5 mm in the running space 48 and flow out of the first tube opening 45a.
  • the second gas collides with the wall surface of the mixing container 10 through a distance of 5 mm.
  • FIG. 10A shows a mass fraction distribution in the case where the first gas passing through the gap 47 has a lower flow rate (lower pressure) than the second gas passing through the second cylinder body 12a.
  • oxygen gas is introduced into the first gas of the same mixer 3a, TEOS gas is introduced as the second gas, and the second gas passing through the second cylinder body 12a passes through the gap 47.
  • the flow rate was lower (lower pressure) than the first gas passing through.
  • FIGS. 11A The boundaries of the mass fraction distribution of TEOS gas in the introduction example 2 are shown in FIGS.
  • the mass fraction distribution in FIG. 11A is the same as the mass fraction distribution in FIG. 10A and is mixed to the same degree.
  • the evaluation value of the mass fraction distribution of the TEOS gas in the mixed gas supplied from the outlet 28a is a value of ⁇ 0.42%.
  • the first cylinder main body 11a when measuring the mass fraction distribution of FIG. 10 (a) and FIG. 11 (a) is shortened by 20 mm.
  • TEOS gas is used as the first gas
  • An oxygen gas was used as the second gas
  • a mass fraction distribution was calculated.
  • the mass fraction distribution is shown in FIG. 12 (a), and the boundaries and dimensions of different values are shown in FIG. 12 (b). Dimensions other than the length of the first cylinder body 11a are the same as those in FIG.
  • the distribution of the mass fraction in FIG. 12 (a) becomes non-uniform in the vicinity of the wall surface close to the first cylinder body 11a out of the two wall surfaces parallel to the first cylinder body 11a. Therefore, the uniformity is worse than the mass fraction distribution of FIG. It can be said that the first cylinder opening 45a is not arranged near the center of the mixing space 13, which is a space where vortex flow is formed.
  • Appropriate positions of the first cylinder opening 45a include the wall surface of the small chamber 21 and the surface of a baffle plate member 44 described later as “wall surfaces” in addition to the wall surface of the mixing fuser 10, and the first and second cylinder bodies 11a, 12a.
  • the mixing space distance L which is the distance between the two wall surfaces forming the mixing space 13 in the mixing melter 10 in the direction in which the length of the mixing fuselage 10 extends, is “1”
  • the root side of the first and second cylinder main bodies 11a, 12a It is located within a range of a distance of 2/5 or more and 3/5 or less from the wall surface.
  • the center of the mixing space 13 is a position spaced 57.5 mm from the small chamber 21, and the position corresponding to the range of 2/5 or more and 3/5 or less is the range of 46 mm or more and 69 mm or less.
  • the first cylinder opening 45a of (a) is located within a distance range of 2/5 or more and 3/5 or less when viewed from the mixing container 10, but is outside the range when viewed from the center position of the mixing space 13. .
  • the evaluation value of the mass fraction distribution of the TEOS gas in the mixed gas supplied from the outlet 28a is a value of ⁇ 0.93%, and the value of the distribution is a comparison between the first gas and the second gas. Since it is a value within a range where it can be determined that the mixture is uniformly mixed, the outflow port 28a is considered to be necessary to be provided near the far wall of the two wall surfaces parallel to the first cylinder body 11a, etc. It is necessary to select an arrangement according to the degree of mass fraction distribution to be obtained. However, with the configuration of FIG.
  • the boundary line of the mass fraction distribution when oxygen gas is used as the first gas and TEOS gas is used as the second gas (Introduction Example 2) in the mixer 3a having the dimensions shown in FIG. Shown in (a) and (b). From FIG. 13 (a), it is understood that the outflow port 28a may be provided at the center of the wall surface facing the first cylinder opening 45a.
  • the evaluation value of the mass fraction distribution of the TEOS gas in the mixed gas supplied from the outlet 28a is a value of ⁇ 1.04%, and the first gas and the second gas are mixed relatively uniformly. I can judge.
  • the first gas is introduced into the small chamber 21 provided inside the mixing container 10, and the first gas in the small chamber 21 is moved to the gap 47, but the third gas shown in FIG.
  • the first chamber may be introduced outside the mixing container 10 by forming the gap 47 outside the mixing container 10 without providing the small chamber 21.
  • first and second cylinder openings 45b and 46b of the first and second cylinder bodies 11b and 12b are arranged inside the mixing container 10, but the gap 47 is also formed outside the mixing container 10. Therefore, the first and second cylinder main bodies 11b and 12b also include a portion that forms the gap 47 outside the mixing container 10.
  • FIG. 14 shows the mass fraction distribution of the mixer 3c.
  • the first gas is TEOS gas
  • the second gas is oxygen gas (Introduction Example 1). Since the 1st cylinder opening 45c is located in the range of 2/5 or more and 3/5 or less, favorable mixing is possible and it has become uniform mixing.
  • the outlets 28 and 28 a are provided outside the portion 14 where the virtual cylinder 29 and the wall surface of the mixing container 10 intersect.
  • the outlet 28 is the mixer 3 of the first embodiment of FIG. 2, and the outer peripheral side surface of the first cylinder body 11d is virtually arranged in the direction in which the first cylinder body 11d extends.
  • the extending virtual cylinder 29 and the mixing container 10 are arranged so that all or at least a part of the intersecting portion 14, which is a wall surface where the wall surface of the mixing container 10 intersects, overlaps.
  • the baffle plate member 44 is arrange
  • the first gas discharged from the first cylinder opening 45d and going straight in the direction parallel to the direction in which the first cylinder main body 45d extends extends to the surface of the baffle plate member 44 by the second gas spreading along the surface of the baffle plate member 44.
  • the first and second air that is discharged from the first tube opening 45d and travels straight is caused to flow along the surface of the baffle plate member 44 and collide with the surface of the baffle plate member 44.
  • the gas does not flow into the outlet 28 but is mixed in the mixing space 13, and a mixed gas in which the first gas and the second gas are uniformly mixed flows into the outlet 28 and is supplied to the discharge device 19.
  • the outlets 28 and 28 a are provided on the outer wall surface of the crossing portion 14 among the wall surfaces of the mixing container 10.
  • the outer wall surface of the crossing portion 14 includes wall surfaces other than the wall surface of the mixing container 10 that the first cylinder opening 45 directly faces.
  • the baffle plate member 44 is not disposed between the wall surfaces of the mixing container 10 of the first cylinder openings 45, 45a to 45c.
  • the first to fourth embodiments The distance between the first cylinder opening 45d and the baffle plate member 44 of the fifth embodiment is larger than the distance between the first cylinder openings 45, 45a to 45c and the wall surfaces facing the first cylinder openings 45, 45a to 45c. The distance is shorter.
  • the baffle plate member 44 approaches the outflow port 28, and the conductance near the outflow port 28 is reduced. In this case, the pressure loss increases. Therefore, the size and position of the baffle plate member 44, the size and position of the outflow port 28, and the like may be obtained so that the pressure loss does not increase.
  • the first cylinder main body 111a and the second cylinder main body 112a are not protruded into the mixing container 10, and in the mixer 103b of FIG. Although it has a different structure from the main body 112b in that it protrudes into the mixing container 10, it is the same in that it does not have a running space.
  • TEOS gas was used as the first gas
  • oxygen gas was used as the second gas.
  • the mass fraction distribution of TEOS gas in the mixer 103a of the first comparative example is shown in FIG. 15, and the mass fraction distribution of TEOS gas in the mixer 103b of the second comparative example is shown in FIG. In any case, it can be seen that the first gas is not uniformly released from the entire circumference of the gap 47 and is not uniformly mixed in the mixing container 10.
  • the TEOS gas in the mixed gas supplied from the mixers 103a and 103b of the first and second comparative examples to the discharge device 19 is the mass fraction of the TEOS gas in the mixed gas of the mixer 103a of the first comparative example in FIG.
  • the evaluation value of the distribution is ⁇ 3.36%
  • the evaluation value of the mass fraction distribution of the TEOS gas in the mixer 103b of the second comparative example in FIG. 16 is ⁇ 0.69%.
  • the first cylinder body 111c is protruded into the mixing container 10, and the first cylinder opening 145c is positioned in the mixing container 10,
  • the two-cylinder main body 112c is protruded into the mixing container 10 from the first cylinder opening 145c of the first cylinder main body 111c, and the second cylinder opening 146c is positioned closer to the facing wall than the first cylinder opening 145c. .
  • FIGS. 17A and 17B are mass fraction distributions of TEOS gas when TEOS gas is used as the first gas and oxygen gas is used as the second gas in the mixer 103c of the third comparative example. .
  • a vortex by oxygen gas is formed between the second cylinder opening 146c and the wall surface close to the second cylinder opening 146c, and the TEOS gas supplied to the portion from the gap 47 is pushed by the vortex of oxygen gas.
  • the evaluation value of the mass fraction distribution of the TEOS gas of the mixed gas supplied to the discharge device 19 is a value of ⁇ 2.5%.
  • 18 (a) and 18 (b) show the mass of TEOS gas when oxygen gas is used as the first gas and TEOS gas is used as the second gas, contrary to FIGS. 17 (a) and (b). It is a fraction distribution.
  • a vortex of oxygen gas supplied from the tip of the gap 47 is formed between the tip of the gap 47 and the wall surface near the tip of the gap 47, and a complex mass is formed around the protruding second cylinder body 112c.
  • a fraction distribution is formed.
  • TEOS gas and oxygen gas are not incident so as to intersect perpendicularly to the wall surface facing the second cylinder opening 146c, but are mixed non-uniformly.
  • the evaluation value of the mass fraction distribution of the TEOS gas in the mixed gas is a value of ⁇ 1.8%.
  • the mixers 3, 3a to 3d of the present invention use a high flow rate (high pressure) gas and a low flow rate. Even if any of the gas at the flow rate (low pressure) is the first gas and the other is the second gas, they are uniformly mixed.
  • first and second cylinder bodies 11, 11a to 11d, 12, 12a to 12d of the mixers 3, 3a to 3d of the present invention described above are circular in cross section, but may be polygonal, A regular polygon is better.
  • the mixers 103a to 103c without the running space 48 can be used even if the first cylinder main bodies 111a to 111c and the second cylinder main bodies 112a to 112c are used. It can be seen that the second gas is not uniformly mixed, but even if the run-up space 48 is provided, it is considered that the second gas is not uniformly mixed if the distance in which the first and second gases flow in the run-up space 48 is short.
  • the optimum length of the run-up space 48 is affected by the internal dimensions of the mixing container 10 used and the thickness and length of the first and second cylinder bodies 11, 11a to 11d, 12, and 12a to 12d. When the size or the like of the container 10 changes, the optimal length of the run-up space 48 may be calculated again.
  • the appropriate positions of the first tube openings 45, 45a to 45d are “wall surfaces” for the wall surface of the mixing melter 10, the wall surface of the small chamber 21, and the surface of the baffle plate member 44.
  • the mixing space distance L which is the distance between the two wall surfaces forming the mixing space 13 in the mixing melter 10 in the direction in which the first and second cylinder bodies 11, 11a to 11d, 12, 12a to 12d extend, is “1”.
  • the first and second cylinder main bodies 11, 11a to 11d, 12, 12a to 12d are located within a range of a distance of not less than 2/5 and not more than 3/5 from the wall surface on the base side.
  • a stable vortex is formed in the mixing space 13 in the mixing vessel 10 of the mixers 3, 3a to 3d of the first to fifth embodiments, and the distribution of the mass fraction in which the first and second gases are uniformly mixed is calculated. Is done.
  • the length of the run-up space 48 in the direction in which the first and second gases flow is parallel to the direction in which the first and second cylinder bodies 11, 11a to 11d, 12, 12a to 12d of the mixing container 10 extend.
  • the length is longer than 1/5 of the side length, a distribution in which the first and second gases are uniformly mixed can be calculated.
  • the optimal values are the internal dimensions of the mixing container 10, the first and second cylinder bodies 11, 11a to 11d, 12, Since the thicknesses and lengths of 12a to 12d have an effect, the optimal distance value may be recalculated if the internal dimensions of the mixing container 10 change.
  • the width in the direction perpendicular to the mixing space distance L and the distance between the outer circumference of the first cylinder bodies 11, 11 a to 11 d and the wall surface of the mixing fuser 10 is the width of the mixing space 13. Is preferably at least twice as long as the diameter (inner diameter) D of the first cylinder openings 45, 45a to 45d. Therefore, the minimum value of the width of the mixing space 13 can be reduced by changing the dimensions. When the diameter D is less than twice the diameter D of 45a to 45d, the dimensions may be recalculated.
  • the TEOS gas and the oxygen gas are mixed by the mixers 3, 3a to 3d, but other types of gases can also be mixed.
  • one of the source gas generated by sublimation or evaporation and the gas that is a gas at normal temperature may be a first gas and the other gas may be a second gas.
  • the vacuum processing apparatus 2 although the thin film was formed using plasma, the vacuum processing apparatus which forms a thin film without using plasma is also contained. Further, a vacuum processing apparatus that performs vacuum processing such as etching or surface treatment without forming a thin film is also included in the present invention.
  • first cylinder bodies 11 and 11a to 11d and the second cylinder bodies 12 and 12a to 12d of Examples 1 to 5 are not in contact with each other, the flow of the first gas flowing through the gap 47 is not disturbed. Smaller spacers may be disposed in close contact with the inner peripheral side surfaces of the first cylinder main bodies 11, 11a to 11d and the outer peripheral side surfaces of the second cylinder main bodies 12, 12a to 12d.

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Abstract

L'invention concerne un mélangeur pour mélanger uniformément un premier gaz et un second gaz, ainsi qu'un dispositif de traitement sous vide utilisant le mélangeur. Un corps de second cylindre 12 est agencé dans l'intérieur d'un corps de premier cylindre 11, sans contact l'un avec l'autre, de telle sorte qu'une ouverture de second cylindre 46 est située à l'intérieur du corps de premier cylindre 11 ; un espace de course d'approche 48 est formé entre une ouverture de premier cylindre 45 et l'ouverture de second cylindre 46 à l'intérieur du corps de premier cylindre 11 ; un second gaz est introduit dans l'espace de course d'approche 48 par l'ouverture de second cylindre 46 ; un premier gaz est introduit dans l'espace de course 48 depuis un espace 47 formé entre les premier et second corps de cylindre 11, 12 ; les premier et second gaz sont amenés à s'écouler dans l'espace de course d'approche 48 dans un état dans lequel le second gaz est enveloppé dans le premier gaz, et introduits à l'intérieur d'un récipient de mélange 10 par l'ouverture de premier cylindre 45 ; les premier et second gaz avancent en ligne droite à travers le récipient de mélange 10 et ils entrent en collision avec une surface de paroi du récipient de mélange 10 faisant face à l'ouverture de premier cylindre 45, formant ainsi un tourbillon des premier et second gaz. Les premier et second gaz sont ainsi mélangés de manière uniforme même lorsqu'il existe une grande différence dans les débits des premier et second gaz introduits dans le récipient de mélange 10.
PCT/JP2016/079681 2015-10-06 2016-10-05 Mélangeur et dispositif de traitement sous vide Ceased WO2017061498A1 (fr)

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KR1020187009489A KR102159868B1 (ko) 2015-10-06 2016-10-05 혼합기, 진공 처리 장치
JP2017527376A JP6216483B2 (ja) 2015-10-06 2016-10-05 混合器、真空処理装置
CN201680058354.9A CN108138321B (zh) 2015-10-06 2016-10-05 混合器、真空处理装置

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CN108138321A (zh) 2018-06-08
CN108138321B (zh) 2020-03-20
KR20180050367A (ko) 2018-05-14
KR102159868B1 (ko) 2020-09-24

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