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TWI667367B - 混合器及真空處理裝置 - Google Patents

混合器及真空處理裝置 Download PDF

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Publication number
TWI667367B
TWI667367B TW105132444A TW105132444A TWI667367B TW I667367 B TWI667367 B TW I667367B TW 105132444 A TW105132444 A TW 105132444A TW 105132444 A TW105132444 A TW 105132444A TW I667367 B TWI667367 B TW I667367B
Authority
TW
Taiwan
Prior art keywords
gas
mixing container
cylinder
cylinder body
tube
Prior art date
Application number
TW105132444A
Other languages
English (en)
Chinese (zh)
Other versions
TW201726969A (zh
Inventor
田宮慎太郎
神保洋介
阿部洋一
Original Assignee
日商愛發科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商愛發科股份有限公司 filed Critical 日商愛發科股份有限公司
Publication of TW201726969A publication Critical patent/TW201726969A/zh
Application granted granted Critical
Publication of TWI667367B publication Critical patent/TWI667367B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/50—Mixing receptacles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Seeds, Soups, And Other Foods (AREA)
TW105132444A 2015-10-06 2016-10-06 混合器及真空處理裝置 TWI667367B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-198275 2015-10-06
JP2015198275 2015-10-06

Publications (2)

Publication Number Publication Date
TW201726969A TW201726969A (zh) 2017-08-01
TWI667367B true TWI667367B (zh) 2019-08-01

Family

ID=58487766

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105132444A TWI667367B (zh) 2015-10-06 2016-10-06 混合器及真空處理裝置

Country Status (5)

Country Link
JP (1) JP6216483B2 (fr)
KR (1) KR102159868B1 (fr)
CN (1) CN108138321B (fr)
TW (1) TWI667367B (fr)
WO (1) WO2017061498A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525780A (en) * 1993-08-31 1996-06-11 Texas Instruments Incorporated Method and apparatus for uniform semiconductor material processing using induction heating with a chuck member
US7045060B1 (en) * 2002-12-05 2006-05-16 Inflowsion, L.L.C. Apparatus and method for treating a liquid
CN1781586A (zh) * 2004-11-30 2006-06-07 沈阳化工学院 单管多旋流体混合装置及其混合操作方法
CN101537319A (zh) * 2009-04-30 2009-09-23 赵纪仲 可调式射流混合装置及其混流调节方法
JP2011056400A (ja) * 2009-09-10 2011-03-24 Jfe Engineering Corp 流体混合方法及び流体混合装置
WO2012134293A1 (fr) * 2011-04-01 2012-10-04 Heatmatrix Group B.V. Dispositif et procédé de mélange de deux fluides
JP2013188938A (ja) * 2012-03-13 2013-09-26 National Institute Of Advanced Industrial Science & Technology 二酸化炭素を混合して低粘性化させた溶融樹脂の高圧微粒化方法及び装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129973A (ja) * 1987-11-13 1989-05-23 Hitachi Ltd 反応処理装置
JP2508717Y2 (ja) * 1989-08-31 1996-08-28 株式会社島津製作所 成膜装置のガス導入用ミキシングチャンバ
JPH10150030A (ja) 1996-11-19 1998-06-02 Kokusai Electric Co Ltd 成膜装置
JP4570732B2 (ja) 2000-05-25 2010-10-27 株式会社アルバック ガス噴出装置及び真空処理装置
JP2003226976A (ja) * 2002-02-04 2003-08-15 Tokura Kogyo Kk ガスミキシング装置
JP2008114097A (ja) * 2005-02-22 2008-05-22 Hoya Advanced Semiconductor Technologies Co Ltd ガス混合器、成膜装置、及び薄膜製造方法
JP4895167B2 (ja) * 2006-01-31 2012-03-14 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法
EP2045002A1 (fr) * 2007-10-02 2009-04-08 Ineos Europe Limited Appareil de mélange
US9121096B2 (en) * 2008-10-10 2015-09-01 Alta Devices, Inc. Concentric showerhead for vapor deposition
US9051900B2 (en) * 2009-01-13 2015-06-09 Avl Powertrain Engineering, Inc. Ejector type EGR mixer
JP5478723B2 (ja) * 2010-06-14 2014-04-23 株式会社アルバック 成膜装置
CN202497835U (zh) * 2012-03-22 2012-10-24 淮南舜化机械制造有限公司 气体混合装置
US10232324B2 (en) * 2012-07-12 2019-03-19 Applied Materials, Inc. Gas mixing apparatus
CN203955054U (zh) * 2014-06-24 2014-11-26 浙江深度能源技术有限公司 Scr脱硝装置的双介质混合器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525780A (en) * 1993-08-31 1996-06-11 Texas Instruments Incorporated Method and apparatus for uniform semiconductor material processing using induction heating with a chuck member
US7045060B1 (en) * 2002-12-05 2006-05-16 Inflowsion, L.L.C. Apparatus and method for treating a liquid
CN1781586A (zh) * 2004-11-30 2006-06-07 沈阳化工学院 单管多旋流体混合装置及其混合操作方法
CN101537319A (zh) * 2009-04-30 2009-09-23 赵纪仲 可调式射流混合装置及其混流调节方法
CN101537319B (zh) 2009-04-30 2011-09-14 赵纪仲 可调式射流混合装置及其混流调节方法
JP2011056400A (ja) * 2009-09-10 2011-03-24 Jfe Engineering Corp 流体混合方法及び流体混合装置
WO2012134293A1 (fr) * 2011-04-01 2012-10-04 Heatmatrix Group B.V. Dispositif et procédé de mélange de deux fluides
JP2013188938A (ja) * 2012-03-13 2013-09-26 National Institute Of Advanced Industrial Science & Technology 二酸化炭素を混合して低粘性化させた溶融樹脂の高圧微粒化方法及び装置

Also Published As

Publication number Publication date
CN108138321A (zh) 2018-06-08
TW201726969A (zh) 2017-08-01
JP6216483B2 (ja) 2017-10-18
CN108138321B (zh) 2020-03-20
KR102159868B1 (ko) 2020-09-24
JPWO2017061498A1 (ja) 2017-10-19
KR20180050367A (ko) 2018-05-14
WO2017061498A1 (fr) 2017-04-13

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