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CN110998818A - 等离子体蚀刻工艺中使用涂布部件的工艺裕度扩充 - Google Patents

等离子体蚀刻工艺中使用涂布部件的工艺裕度扩充 Download PDF

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CN110998818A
CN110998818A CN201880051161.XA CN201880051161A CN110998818A CN 110998818 A CN110998818 A CN 110998818A CN 201880051161 A CN201880051161 A CN 201880051161A CN 110998818 A CN110998818 A CN 110998818A
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D·杨
陈天发
P·希尔曼
L·朱
N·K·英格尔
D·卢博米尔斯基
C·斯纳迪加尔
M·夏
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Abstract

本技术的实施例可包括一种蚀刻方法。该方法可包括在腔室的第一部分中混合等离子体流出物与气体以形成第一混合物。该方法也可包括在腔室的第二部分中使第一混合物流到基板。第一部分和第二部分可包括镀镍材料。该方法可进一步包括使第一混合物与基板反应以相对于第二层选择性蚀刻第一层。此外，该方法可包括形成第二混合物，该第二混合物包括来自第一混合物与基板反应的产物。

Description

等离子体蚀刻工艺中使用涂布部件的工艺裕度扩充
相关申请的交叉引用
本申请要求2017年8月7日提交的美国正式申请No.15/670,919的优先权，其全部内容出于所有目的通过引用以其全文结合于此。
技术领域
本技术关于半导体工艺及设备。更具体而言，本技术关于在低压蚀刻操作期间改良工艺选择性。
背景技术
集成电路可能由在基板表面上产生复杂图案化的材料层的工艺来制成。在基板上产生图案化材料需要用于移除暴露材料的受控方法。出于各种目的使用化学蚀刻，包括将光刻胶中的图案转移至下层中、薄化层或薄化已经在表面上存在的特征的横向尺寸。通常期望具有与另一种材料相比更快速地蚀刻一种材料的蚀刻工艺，从而促进例如图案转移工艺。认为此蚀刻工艺对第一材料具有选择性。由于材料、电路和工艺的多样性，已经开发出具有相对于各种材料的选择性的蚀刻工艺。
在基板处理区域内形成的局部等离子体中产生的干式蚀刻可以穿透更受限制的沟槽，并且与湿式蚀刻相比，展现脆弱剩余结构的较少形变。然而，尽管蚀刻工艺可相对于第二材料对第一材料具有选择性，但第二材料的一些不期望蚀刻仍可发生。
因此，存在对可以用于产生高质量组件及结构的经改良系统及方法的需要。这些及其他需要由本技术解决。
发明内容
随着半导体组件变得更小，图案化这些组件可变得更具挑战性。较小特征可更难以限定。这可由于性能、可靠性及制造产出量所需的减小的大小或更严格的容差而导致。下文描述的方法可提供经改良的图案化工艺。
由镀镍材料使等离子体流出物及气体的混合物流动可允许以较低压力蚀刻。通过促进蚀刻剂行进到窄且深的特征底部而不接触及蚀刻侧壁，较低压力处理可有利于较小且较深半导体特征。镀镍可通过在较低压力下维持低的硅蚀刻量来增加选择性。不旨在受限于理论，据信镍可清除氟自由基或氢自由基，而氟自由基或氢自由基正是不期望的硅蚀刻的原因。镍可涂布在气体与等离子体蚀刻剂的大量混合下游的腔室部件。镍可沿着混合的下游的腔室中的等离子体流出物的流动路径涂布所有部件。
本技术的实施例可包括一种半导体处理系统。该系统可包括远程等离子体区域。该系统也可包括由通道与远程等离子体区域流体耦合的处理区域。该系统可进一步包括流体耦合至通道的气体入口。气体入口可限定在进入处理区域之前不经过远程等离子体区域的气体的流动路径。处理区域可包括经配置以支撑基板的基座。处理区域可至少部分由侧壁及喷淋头限定。侧壁及喷淋头可镀有镍。
本技术的实施例可包括一种蚀刻方法。该方法可包括在腔室的第一部分中混合等离子体流出物与气体以形成第一混合物。该方法也可包括在腔室的第二部分中使第一混合物流到基板。第一部分和第二部分可包括镀镍材料。该方法可进一步包括使第一混合物与基板反应以相对于第二层选择性蚀刻第一层。此外，该方法可包括形成第二混合物，该第二混合物包括来自第一混合物与基板反应的产物。
本技术的实施例可包括一种蚀刻方法。该方法可包括使包括氨及含氟气体的第一气体流过等离子体以形成等离子体流出物。该方法也可包括使等离子体流出物流过腔室的第一部分。第一部分可以不包括镀镍材料。该方法可进一步包括在腔室的第二部分中使包括氨的第二气体与等离子体流出物混合以形成第一混合物。此外，该方法可包括在腔室的第三部分中使第一混合物流到基板。该方法也可包括使第一混合物与基板反应以相对于硅层选择性蚀刻氧化硅层。随后，该方法可包括形成第二混合物，该第二混合物包含来自第一混合物与基板反应的产物。第二混合物可流过腔室的第四部分以离开腔室。第二部分、第三部分及第四部分可包括镀镍材料。
附图说明
对所公开技术的性质和益处的进一步理解可通过参考本说明书及附图的剩余部分来实现。
图1图示了根据本技术的实施例的半导体处理系统。
图2图示了根据本技术的实施例的蚀刻方法。
图3图示了根据本技术的实施例的蚀刻方法。
图4A、图4B及图4C图示了根据本技术的实施例的使用镍涂布的腔室及阳极化铝腔室的蚀刻量。
图5图示了根据本发明的实施例的示例性处理工具的一个实施例的俯视平面图。
图6A和图6B图示了根据本发明的实施例的示例性处理腔室的横截面图。
图7图示了根据本发明的实施例的示例性喷淋头配置的示意图。
图8图示了根据本技术的实施例的示例性处理系统的示意性横截面图。
图9示出了根据本技术的实施例的入口配接器的示意性仰视部分平面图。
具体实施方式
用于蚀刻氧化硅的传统系统及方法可能不适用于低压。低压对于较小且较深半导体特征而言可能是较佳的。然而，在较低压力下，蚀刻选择性可能降低。例如，在较低压力下蚀刻热氧化物期间，热氧化物的蚀刻量可能降低，而硅的蚀刻量可能增加。在低压下，反应成分(诸如自由基)的密度降低。因此，热氧化物的蚀刻速率可能降低。未反应或未完全反应的物质也可能在腔室中存在。在较低压力下，这些未反应的物质(例如，氟自由基或氢自由基)可在基板中与硅反应，从而增加硅的蚀刻速率。传统方法在增加的腔室压力下蚀刻以使自由基与基板或其他气体物质反应。
本技术的实施例可允许低压蚀刻热氧化物而不实质上降低相对于硅蚀刻的选择性。镀镍的腔室部件可减少未反应自由基的量。在较少未反应自由基的情况下，自由基更可能蚀刻热氧化物并且不呈现对硅的蚀刻。
I.系统概述
如图1中所示，本技术的实施例可包括半导体处理系统100。系统100可包括远程等离子体区域。远程等离子体区域可包括远程等离子体源102。
系统100也可包括由隔离器104限定的通道与远程等离子体区域流体耦合的处理区域。隔离器104可以是陶瓷材料，诸如氧化铝。隔离器104可能不镀有镍。处理区域可包括从气体与等离子体流出物混合处到等离子体流出物与基板反应以离开腔室处的腔室区。处理区域可包括从隔离器104到端口但不包括隔离器104的区域，该端口是从腔室到泵的端口。
系统100可进一步包括流体耦合至隔离器104的气体入口106。气体入口可限定在进入处理区域之前不经过远程等离子体区域的气体的流动路径。来自等离子体源102的等离子体流出物可穿过输入口108进入隔离器104。气体入口106和输入口108可设置在远程等离子体源(remote plasma source；RPS)配接器110中。RPS配接器110允许远程等离子体源连接到腔室。RPS配接器110、气体入口106及输入口108可能不镀有镍。
隔离器104的下游为混合歧管112。混合歧管112可限定实质上不是直的流动路径。例如，混合歧管可包括流动路径大小的减小(例如，渐缩)和/或扩展，以使气体与等离子体流出物混合。混合歧管112可通向气盒114。气盒加热器116可设置在气盒114上。
在气盒114之后，系统100可经配置为使得等离子体流出物及其他气体经过均匀阻隔器118、均匀面板120及均匀选择性模块化组件(selective modular device；SMD)122。系统100可包括至少部分由均匀SMD 122及间隔件124限定的反应区域。反应区域可以是处理区域的一部分。
处理区域可包括经配置以支撑基板的基座126。基座可镀有镍，但由于基板可覆盖基座，镀镍基座可能不影响蚀刻的选择性。基板可以是半导体晶片，包括硅晶片。系统100可包括设置在基座126的圆周上的圆环(即，边缘环128)。圆环可镀有镍。
系统100可包括泵送衬垫/通道130。泵送衬垫/通道130可包括从腔室到泵的出口。系统100也可包括盖板嵌件132。
处理区域可包括限定在从混合歧管112到泵送衬垫/通道130的区域。处理区域可至少部分由侧壁(例如，间隔件124或形成腔室壁的任何部件)及喷淋头(例如，均匀SMD122)限定。侧壁及喷淋头可镀有镍。从混合歧管112中混合气体到泵送衬垫/通道130的一些或所有表面可具有镀镍表面，包括例如，无电镀镍或电镀镍。无电镀镍可包括有硼镍或有磷镍。隔离器104下游的部件可具有镀镍表面。换言之，混合歧管112、气盒114、均匀阻隔器118、均匀面板120、均匀SMD 122、间隔件124、边缘环128及泵送衬垫/通道130可镀有镍或清除过量自由基的另一种金属。压力板、入口配接器及扩散器(未在图1中图示，但在图8中图示)可在隔离器104与混合歧管112之间，并且每一个可镀有镍或清除过量自由基的另一种金属。其他金属可包括铂或钯，但二者均可能太过昂贵。镀有镍的部件可包括镀覆之前与镍不同的金属。例如，部件可包括不锈钢或铝。
图1是系统的简图。图8图示了系统的类似图且在下文描述。本领域技术人员将理解图8中的从等离子体流出物与隔离器104下游的气体的混合(例如，从压力板4025)到离开腔室的任何部件(例如，金属部件)可镀有镍。
II.方法
实施例包括蚀刻方法，该方法可使用本文描述的蚀刻系统。
A.示例方法
如图2中所示，本技术的实施例可包括蚀刻方法200。在框202中，方法200可包括在腔室的第一部分中混合等离子体流出物与气体以形成第一混合物。等离子体流出物可包括来自使氨及含氟气体流过等离子体的流出物。含氟气体可包括NF3和/或HF。在一些实施例中，等离子体流出物可包括来自使氨、NF3、氩、H2、氦及HF流过等离子体的流出物。第一部分可包括镀镍材料，包括无电镀镍材料。第一部分可包括混合歧管，类似图1中的混合歧管112。在实施例中，第一部分可包括渐缩路径(例如，图8中的中心孔4023)。与非渐缩路径相比，渐缩路径可混合更多气体，这可允许镀镍部件清除自由基。气体可包括氨或氢。
在混合等离子体流出物之前，等离子体流出物可流过腔室的不包括镀镍材料的部分。在引入气体之前的腔室部件可能不镀有镍。例如，在图1中，RPS配接器110可能不镀有镍。与期望结果相反，用镍镀覆RPS配接器可减少所蚀刻氧化硅的量，但增加所蚀刻多晶硅的量。非金属(例如，陶瓷)或不允许等离子体流出物与气体的充分混合的腔室部件也可不镀有镍。例如，在图1中，隔离器104是陶瓷并且不可容易地镀镍。此外，隔离器104不提供用于等离子体流出物与气体的大量混合的几何形状。
在框204中，方法200也可包括在腔室的第二部分中使第一混合物流到基板。腔室的第二部分可在10Torr或更低的压力下，该压力可包括8至10Torr、6至8Torr、4至6Torr、2至4Torr、1至2Torr、或低于1Torr。腔室的第二部分可包括基座，在处理期间基板可位于该基座处。第二部分可包括镀镍材料，包括本文描述的任何镀镍材料。第一混合物可在腔室中在从第一部分到第二部分的路径中流动。路径可由腔室的镀镍部件限定。从等离子体流出物与气体的大量混合到腔室出口的路径可由镀有镍的表面限定，不由未镀有镍的表面中断。
在框206中，方法200可进一步包括使第一混合物与基板反应以相对于第二层选择性蚀刻第一层。第一层可以是热氧化硅层。第二层可以是硅层，包括多晶硅层。第二层可以是任何层，该层可由氟自由基或氢自由基蚀刻。使第一混合物与基板反应可包括蚀刻小于1埃的第二层及大于50埃的第二层。在实施例中，第二层可具有大于50埃、大于100埃、200埃或300埃的蚀刻量，而第一层具有小于1埃的蚀刻量，包括小于0.5埃或约0埃。相对于硅蚀刻氧化物的选择性可大于100、200、300、400、500、600、700、800、900或1000。
在框208中，方法200可包括形成第二混合物，该第二混合物包括来自第一混合物与基板反应的产物。方法200也可包括使第二混合物流过腔室的一部分以离开腔室，其中通向离开腔室的腔室表面包括镀镍材料。例如，在图1中，泵送衬垫/通道130可以是镀镍的。
方法200可包括将氟原子或氢原子吸附至镀镍材料上。从与基板反应移除氟原子或氢原子可帮助维持硅的可忽略的蚀刻同时蚀刻热氧化物。
方法200可进一步包括从腔室移除基板并在基板上执行额外图案化操作。
B.示例方法
如图3中所示，本技术的实施例可包括蚀刻方法300。在框302中，方法300可包括使包括氨及含氟气体的第一气体流过等离子体以形成等离子体流出物。第一气体可以是本文描述的任何气体。
在框304中，方法300也可包括使等离子体流出物流过腔室的第一部分。第一部分可以不包括镀镍材料。第一部分可包括非金属或不具有等离子体流出物与气体的充分混合的腔室部件。第一部分可以是如本文描述的未镀有镍的腔室的任何部分。
在框306中，方法300可进一步包括在腔室的第二部分中将包括氨的第二气体与等离子体流出物混合以形成第一混合物。第二气体在与等离子体流出物混合物之前可以不经过等离子体。腔室的第二部分可以在气体经历充分混合的位置处。例如，在图1中，腔室的第二部分可包括混合歧管112。腔室的第二部分可包括渐缩孔，并且可包括图8中的压力板4025、入口配接器4030、扩散器4035和混合歧管4040。
在框308中，方法300可包括在基板的第三部分中使第一混合物流到腔室。腔室的第三部分可包括在基板被蚀刻处的腔室部分。在图1中，腔室的第三部分可至少部分由均匀SMD 122及间隔件限定，并且可包括基座126。
在框310中，方法300也可包括使第一混合物与基板反应以相对于硅层选择性蚀刻氧化硅层。氧化硅层及硅层可以是本文描述的任何这种层并且可如本文所描述来选择性蚀刻。
在框312中，方法300可包括形成第二混合物，该第二混合物包含来自第一混合物与基板反应的产物。产物可包括来自蚀刻氧化硅的蚀刻副产物。
在框314中，第二混合物可流过腔室的第四部分以离开腔室。腔室的第四部分可至少部分由泵端口或例如图1中的泵送衬垫/通道130限定。离开腔室可包括以与系统经配置以接收基板的部分明显不同的压力下进入系统的部分。
第二部分、第三部分和第四部分可包括镀镍材料。第一混合物可在从第二部分到第四部分的腔室中的路径中流动。路径可以是连续的并且可由腔室的镀镍部件来限定。从第二部分到第四部分的任何表面可镀有镍，并且可以不包括缺乏镀镍的表面。如关于图1描述，从混合歧管112到泵送衬垫/通道130并且包括混合歧管112的任何及所有部件(可选地除了基座126之外)可镀有镍。在图8中，从压力板4025到离开腔室并且包括压力板4025的任何及所有部件可镀有镍。
III.示例
测量不具有任何镀镍部件的系统的蚀刻量以及具有镀镍部件的系统的蚀刻量。具有镀镍部件的系统是与图1类似的系统，其中隔离器104下游的部件镀有镍(包括混合歧管112、气盒114、均匀阻隔器118、均匀面板120、均匀SMD 122、间隔件124、边缘环128及泵送衬垫/通道130，以及未在图1中图示的压力板、入口配接器和扩散器)。RPS配接器110及隔离器104未镀有镍。不具有镀镍部件的系统具有替代的阳极化铝涂层来替代。NH3、NF3、氩、H2、氦及HF的气体混合物流过远程等离子体源。等离子体流出物随后与氨混合并流动以蚀刻基板。测量热氧化物和多晶硅的蚀刻量。
图4A、图4B及图4C图示了利用镍涂布腔室及阳极化铝腔室蚀刻的结果。在图4A中，x轴是腔室压力。左侧的y轴图示以埃为单位的热氧化物蚀刻量。此工艺期望较高的热氧化物蚀刻量。菱形图示镍涂层的热氧化物蚀刻量，并且三角形图示阳极化铝涂层的热氧化物蚀刻量。对于从7Torr至10Torr的压力，两种系统均图示类似的热氧化物蚀刻量。
右侧的y轴图示以埃为单位的硅蚀刻量。方形图示镍涂层的硅蚀刻量，并且x图示阳极化铝涂层的硅蚀刻量。在10Torr下，镍涂布系统及阳极化铝涂布系统均示出接近零的硅蚀刻量。然而，随着压力减小，阳极化铝涂布系统的硅蚀刻量增加。在6Torr下，阳极化铝涂布导致蚀刻约10埃的硅。相比之下，甚至在4Torr的最低测试压力下，镍涂布的系统示出几乎无硅蚀刻量。
图4B图示来自图4A的结果，但仅针对镍涂布的系统。该图在左手y轴上图示热氧化物蚀刻量，在右手y轴上图示硅蚀刻量，以及在x轴上图示腔室压力。绘制了热氧化物蚀刻量，并且随着压力减小，热氧化物蚀刻量减小。未测量到任何腔室压力的硅蚀刻量。因此，在此示例中，镍涂布的系统示出相对于硅蚀刻热氧化物的无限选择性。
图4C图示了来自图4A的结果，但仅针对阳极化铝系统。该图在左手y轴上图示热氧化物蚀刻量、在右手y轴上图示硅蚀刻量、以及在x轴上图示腔室压力。绘制了热氧化物蚀刻量，并且随着压力减小，热氧化物蚀刻量减小。随着压力减小，硅的蚀刻量增加。在7Torr的压力下，硅蚀刻量是约10埃，而热氧化物蚀刻量是约250埃。在7Torr下的选择性略微大于25。结果指示随着腔室压力减小，硅蚀刻量将继续增加，并且热氧化物蚀刻量将继续减小。因此，在小于7Torr的压力下，本领域技术人员将期望选择性低于25。
Ⅳ.示例性处理系统
可实现本发明的实施例的处理腔室可以被包括在处理平台内，诸如可以从加州圣克拉拉市的应用材料公司获得的
Figure BDA0002380424050000091
SelectraTM蚀刻系统。
图5图示了根据所公开实施例的沉积、蚀刻、烘焙及固化腔室的处理工具1000的一个实施例的俯视平面图。在该图中，一对前开式晶片传送盒(front opening unified pod；FOUP)1002供应各种大小的基板，该基板由机器臂1004接收并在放置到位于串联部分1009a-c中的基板处理腔室1008a-f中的一个中之前放置到低压保持区域1006内。第二机器臂1010可用于将基板晶片从保持区域1006运输到基板处理腔室1008a-f并返回。可配备每个基板处理腔室1008a-f来执行数个基板处理操作，除了循环层沉积(cyclical layerdeposition；CLD)、原子层沉积(atomic layer deposition；ALD)、化学气相沉积(chemicalvapor deposition；CVD)、物理气相沉积(physical vapor deposition；PVD)、蚀刻、预清洁、除气、定向及其他基板工艺之外，该基板处理操作包括本文描述的干式蚀刻工艺。
基板处理腔室1008a-f可包括一或多个系统部件，该系统部件用于在基板晶片上沉积、退火、固化和/或蚀刻膜。在一种配置中，两对处理腔室(例如，1008c-d及1008e-f)可用于在基板上沉积材料，并且第三对处理腔室(例如，1008a-b)可用于蚀刻所沉积的膜。在另一种配置中，所有三对腔室(例如，1008a-f)可经配置以蚀刻在基板上的膜。所描述的工艺中的任何一种或多种可在与不同实施例中图示的制造系统分离的一个或多个腔室中执行。膜可以是介电、保护性或其他材料。将了解到，处理工具1000被预想到用于膜的沉积、蚀刻、退火及固化腔室的额外配置。
图6A图示了在处理腔室内具有划分的等离子体产生区域的示例性处理腔室部分2000的横截面图。在膜蚀刻期间，例如，硅、多晶硅、氧化硅、氮化硅、氮氧化硅、碳氧化硅、含碳材料等等，工艺气体可穿过气体入口组件2005流至第一等离子体区域2015中。远程等离子体系统(remote plasma system；RPS)单元2001可包括在该系统中，并且可处理气体，该气体随后可行进穿过气体入口组件2005。入口组件2005可包括两个或更多个相异的气体供应通道，其中第二通道(未示出)可绕过RPS单元2001。由此，在所公开的实施例中，可将前驱物气体递送至处于未激发状态的处理腔室。在另一示例中，在所公开的实施例中，穿过RPS提供的第一通道可用于工艺气体(process gas)，并且绕过RPS的第二通道可用于处理气体(treatment gas)。工艺气体可在进入第一等离子体区域2015之前在RPS单元2001内激发。由此，在所公开的实施例中，例如，含氟前驱物可经过RPS 2001或绕过RPS单元。将类似地理解此布置涵盖的各种其他示例。
图示了冷却板2003、面板2017、离子抑制件2023、喷淋头2025及基座2065(其上设置有基板2055)并且上述每一个可根据所公开的实施例包括在内。基座2065可具有热交换通道，热交换流体流过该热交换通道以控制基板温度。此配置可允许冷却或加热基板2055温度以维持相对低温度，诸如在约-20℃至约200℃之间，或其间。热交换流体可包含乙二醇和/或水。基座2065的晶片支撑盘(其可包含铝、陶瓷或其组合)也可使用嵌入式电阻加热器组件来电阻式加热以达到相对高温度，诸如从高达或约100℃至高于或约1100℃。加热组件可在基座内形成为一或多个回路，并且加热器组件的外部可邻近支撑盘的周边延伸，而内部在具有较小半径的同心圆路径上延伸。到加热器组件的接线可经过基座2065的轴杆，该轴杆可经进一步配置以旋转。
面板2017可以是角锥、圆锥、或另一类似结构，其中窄顶部延伸至宽底部。如图所示，面板2017可另外为平坦的，并且包括用于分配工艺气体的多个通道。取决于使用RPS2001，等离子体产生气体和/或等离子体激发物质可经过面板2017中的多个孔洞，用于更均匀递送至第一等离子体区域2015中。
示例性配置可包括具有通向由面板2017从第一等离子体区域2015划分的气体供应区域2058的气体入口组件2005，使得气体/物质穿过面板2017中的孔洞流至第一等离子体区域2015中。可选择结构及操作特征来防止等离子体从第一等离子体区域2015显著回流返回到供应区域2058、气体入口组件2005及流体供应系统(未示出)中。结构特征可包括选择面板2017中的孔的尺寸及截面几何形状以去活化回流等离子体。操作特征可包括维持气体供应区域2058与第一等离子体区域2015之间的压力差，该压力差维持等离子体穿过喷淋头2025的单向流动。面板2017或腔室的导电顶部、以及喷淋头2025被示出为具有位于特征之间的绝缘环2020，这允许相对于喷淋头2025和/或离子抑制件2023将AC电势施加到面板2017。绝缘环2020可定位在面板2017与喷淋头2025和/或离子抑制件2023之间，从而使得在第一等离子体区域中形成电容耦合的等离子体(capacitively coupled plasma；CCP)。挡板(未图示)可附加地位于第一等离子体区域2015中，或以其他方式与气体入口组件2005耦合，以影响流体穿过气体入口组件2005到区域中的流动。
离子抑制件2023可包含板或在整个结构中限定多个孔的其他几何形状，该结构或其他几何形状经配置以抑制带电物质(例如，离子)迁移出等离子体激发区域2015，同时允许不带电的中性或自由基物质经过离子抑制件2023到抑制件与喷淋头之间的活化气体递送区域中。在所公开的实施例中，离子抑制件2023可包含具有各种孔配置的通孔板。这些不带电物质可包括利用较少反应性载送气体运输穿过孔的高反应性物质。如上所述，离子物质穿过孔洞的迁移可减少，并且在一些实例中被完全抑制。控制经过离子抑制件2023的离子物质的量可提供对与下层晶片基板接触的气体混合物的增加的控制，这继而可增加对气体混合物的沉积和/或蚀刻特性的控制。例如，调节气体混合物的离子浓度可以显著改变其蚀刻选择性。在执行沉积的替代实施例中，其也可以偏移介电材料、含碳材料及其他材料的保形对可流动类型沉积的平衡。
离子抑制件2023中的多个孔洞可经配置以控制活化气体(即，离子、自由基和/或中性物质)穿过离子抑制件2023的通过。例如，可控制孔洞的深宽比或孔洞直径与长度比和/或孔洞的几何形状，使得减少经过离子抑制件2023的活化气体中的带离子电荷的物质的流动。离子抑制件2023中的孔洞可包括面向等离子体激发区域2015的渐缩部分，以及面向喷淋头2025的圆柱部分。可调整圆柱部分的形状及尺寸来控制经过喷淋头2025的离子物质的流动。可调节的电偏压也可施加至离子抑制件2023，作为控制穿过抑制件的离子物质的流动的额外手段。
离子抑制组件2023可用于减少或消除从等离子体产生区域行进到基板的带离子电荷的物质的量。不带电的中性及自由基物质仍可经过离子抑制件中的开口来与基板反应。应当注意，在围绕基板的反应区域中完全消除带离子电荷的物质并非总是期望的目的。在许多实例中，需要离子物质到达基板以执行蚀刻和/或沉积工艺。在这些实例中，离子抑制件可帮助将反应区域中的离子物质浓度控制在辅助工艺的水平。
与离子抑制件2023结合的喷淋头2025可允许在腔室等离子体区域2015中存在等离子体以避免在基板处理区域2033中直接激发气体，同时仍允许被激发的物质从腔室等离子体区域2015行进至基板处理区域2033中。以此方式，腔室可经配置以防止等离子体接触正在蚀刻的基板2055。这可有利地保护各种复杂结构及在基板上图案化的膜，若由所产生等离子体直接接触，该复杂结构及膜可被破坏、错位、或以其他方式扭曲。此外，当允许等离子体接触由沟槽暴露的下层材料，诸如蚀刻终止，下层材料蚀刻的速率可增加。
处理系统可进一步包括电源供应器2040，电源供应器2040与处理腔室电气耦合以向面板2017、离子抑制件2023、喷淋头2025和/或基座2065提供电力以在第一等离子体区域2015或处理区域2033中产生等离子体。电源供应器可经配置以取决于所执行的工艺将可调节电量递送至腔室。此配置可允许在正执行的工艺中使用可调谐等离子体。与经常存在有开或关功能的远程等离子体单元不同，可调谐等离子体可经配置以将特定电量递送至等离子体区域2015。这继而可允许发展特定等离子体特性，使得前驱物可以特定方式解离来增强由这些前驱物产生的蚀刻轮廓。
等离子体可在喷淋头2025之上的腔室等离子体区域2015中或在喷淋头2025之下的基板处理区域2033中点燃。等离子体可在腔室等离子体区域2015中存在以由含氟前驱物的流入产生自由基氟前驱物。通常在射频(radio frequency；RF)范围中的AC电压可以被施加在处理腔室的导电顶部(诸如面板2017)与喷淋头2025和/或离子抑制件2023之间以在沉积期间点燃腔室等离子体区域2015中的等离子体。RF电源供应器可产生13.56MHz的高RF频率，但也可产生单独的其他频率或与13.56MHz频率结合的其他频率。
等离子体功率可以具有各种频率或多个频率的组合。在示例性处理系统中，等离子体可相对于离子抑制件2023和/或喷淋头2025由递送至面板2017的RF功率提供。在不同实施例中，RF功率可在约10瓦与约2000瓦之间、约100瓦与约2000瓦之间、约200瓦与约1500瓦之间、或约200瓦与约1000瓦之间。在不同实施例中，在示例性处理系统中施加的RF功率可以是小于约200kHz的低RF功率、在约10MHz与约15MHz之间的高RF功率、或大于或约1GHz的微波频率。等离子体功率可电容耦合(capacitively-coupled；CCP)或电感耦合(inductively-coupled；ICP)至远程等离子体区域中。
当打开基板处理区域2033中的底部等离子体以例如固化膜或清洁与基板处理区域2033接近的内表面时，顶部等离子体区域2015可保持低功率或无功率。基板处理区域2033中的等离子体可由在喷淋头2025与基座2065或腔室底部之间施加AC电压来点燃。可在存在等离子体时将清洁气体引入基板处理区域2033中。
通过本文描述的喷淋头的实施例，流体(诸如前驱物，例如含氟前驱物)可流到处理区域2033中。在等离子体区域2015中从工艺气体得到的被激发的物质可行进穿过离子抑制件2023中的孔和/或喷淋头2025，并且与从喷淋头的独立部分流到处理区域2033中的额外前驱物反应。或者，如果所有前驱物物质正在等离子体区域2015中激发，则无额外前驱物可流过喷淋头的独立部分。几乎没有或没有等离子体可存在于处理区域2033中。在所公开的应用中，前驱物的激发的衍生物可在基板之上的区域中结合，并且有时在基板上结合以蚀刻结构或移除基板上的物质。
直接激发第一等离子体区域2015中的流体或激发RPS单元2001中的流体可提供若干益处。归因于第一等离子体区域2015中的等离子体，从流体得到的被激发的物质的浓度可在处理区域2033内增加。此增加可由于第一等离子体区域2015中的等离子体位置。与远程等离子体系统(remote plasma system；RPS)2011相比，处理区域2033可位于更靠近第一等离子体区域2015处，从而为被激发的物质余留较少时间，以经由与其他气体分子、腔室壁及喷淋头表面的碰撞而保持在激发状态。
从工艺气体得到的被激发的物质的浓度均匀性也可在处理区域2033内增加。这可由于第一等离子体区域2015的形状，该形状可更类似处理区域2033的形状。相对于经过喷淋头2025的中心附近的孔的物质，在RPS单元2001中产生的被激发的物质可行进更大距离，以经过喷淋头2025的边缘附近的孔。较大距离可导致被激发的物质的减少激发，并且，例如，可导致基板边缘附近的较慢生长速率。对于流过RPS 2001的流体，在第一等离子体区域2015中激发流体可减轻此变化。
工艺气体可在RPS单元2001中被激发，并且可以以激发状态经过喷淋头2025到处理区域2033。或者，可将电力施加至第一处理区域以激发等离子体气体或增强来自RPS的已经被激发的工艺气体。尽管等离子体可在处理区域2033中产生，等离子体可替代地不在处理区域中产生。在一个示例中，仅激发工艺气体或前驱物可来自激发RPS单元2001中的工艺气体以在处理区域2033中与基板2055反应。
除了流体前驱物之外，可存在在不同时间出于不同目的引入的其他气体，包括辅助递送的载送气体。可引入处理气体以从腔室壁、基板、所沉积的膜和/或沉积期间的膜移除不期望的物质。处理气体可在等离子体中激发并随后用于减少或移除腔室内部的残余内含物。在其他公开的实施例中，可在没有等离子体的情况下使用处理气体。当处理气体包括水蒸气时，递送可使用质量流量计(mass flow meter；MFM)、质量流量控制器(mass flowcontroller；MFC)、喷射阀或由市面上可获得的水蒸气产生器来实现。可穿过RPS单元或绕过RPS单元将处理气体引到处理区域2033，并且处理气体可在第一等离子体区域中进一步被激发。
图6B图示了影响穿过面板2017的工艺气体分配的特征的细节图。如图6A及图6B所示，面板2017、冷却板2003及气体入口组件2005交叉以限定气体供应区域2058，可将工艺气体从气体入口2005递送至气体供应区域2058中。气体可填充气体供应区域2058并且穿过面板2017中的孔2059流到第一等离子体区域2015。孔2059可经配置以以实质上单向方式引导流动，使得工艺气体可流到处理区域2033中，但可部分或完全防止工艺气体在横穿面板2017之后回流到气体供应区域2058中。
用于在处理腔室部分2000中使用的气体分配组件(诸如喷淋头2025)可被称为双通道喷淋头(dual channel showerhead；DCSH)并且在本文的图6A以及图7中描述的实施例中另外详述。双通道喷淋头可被提供用于蚀刻工艺，该蚀刻工艺允许分离处理区域2033外部的蚀刻剂来在递送至处理区域中之前提供与腔室部件及彼此的受限相互作用。
喷淋头2025可包含上板2014及下板2016。板可彼此耦合以限定板之间的容积2018。板的耦合可以是用以提供穿过上板及下板的第一流体通道2019及穿过下板2016的第二流体通道2021。所形成的通道可经配置以提供从容积2018穿过下板2016单独经由第二流体通道2021的流体通路，并且第一流体通道2019可与在板与第二流体通道2021之间的容积2018流体隔离。可穿过气体分配组件2025的一侧流体进入容积2018。尽管图6A的示例性系统包括双通道喷淋头，将理解可利用替代分配组件来在处理区域2033之前维持第一与第二前驱物流体隔离。例如，可利用多孔板及该板下面的管，尽管其他配置可以以降低的效率操作，或不提供如所描述的双通道喷淋头那样的均匀处理。
在所示的实施例中，喷淋头2025可经由第一流体通道2019分配工艺气体，该工艺气体在由腔室等离子体区域2015中或来自RPS单元2001的等离子体激发时含有等离子体流出物。在实施例中，引入RPS单元2001和/或腔室等离子体区域2015中的处理气体可含有氟(例如，CF4、NF3或XeF2)、氧(例如，N2O)或含氢前驱物(例如，H2或NH3)。一种或两种工艺气体也可包括载送气体，诸如氦、氩、氮(N2)等等。等离子体流出物可包括工艺气体的离子化或中性衍生物，并且本文中也可被称为氟自由基前驱物，指所引入的工艺气体的原子构成。在示例中，含氟气体(诸如NF3)可在RPS单元2001中激发并经过区域2015及2033，而在那些区域中不额外产生等离子体。来自RPS单元2001的等离子体流出物可经过喷淋头2025并随后与基板2055反应。在经过喷淋头2025之后，等离子体流出物可包括自由基物质，并且可基本上不含离子物质或UV光。这些等离子体流出物可与基板2055上的膜(例如，氮化钛及其他掩模材料)反应。
用于在处理腔室部分2000中使用的气体分配组件2025被称为双通道喷淋头(dualchannel showerhead；DCSH)并且在本文的图7中描述的实施例中详述。双通道喷淋头可允许材料的可流动沉积，以及在操作期间前驱物及处理流体的分离。喷淋头可替代地用于蚀刻工艺，该蚀刻工艺允许分离反应区外部的蚀刻剂以在递送至处理区域中之前提供与腔室部件及彼此的受限相互作用。
图7是根据所公开的实施例的与处理腔室一起使用的喷淋头3025的仰视图。喷淋头3025可与图6A所示的喷淋头对应。通孔3065(其示出第一流体通道2019的视图)可具有多个形状及配置，以控制并影响前驱物穿过喷淋头3025的流动。小孔洞3075(其示出第二流体通道2021的视图)可实质上均匀地分布在喷淋头的表面上方(甚至在通孔3065之间)，与其他配置相比，这可帮助在前驱物离开喷淋头时提供该前驱物的更均匀混合。
图8图示了根据本技术的实施例的示例性处理系统4000的示意性横截面图。系统4000可以是图1中的系统100的变化。系统4000也可包括图6A中示出的腔室的变化，并且可包括在那个图中示出的一些或所有部件。系统4000可包括处理腔室4005和远程等离子体单元4010。远程等离子体单元4010可利用一个或多个部件与处理腔室4005耦合。远程等离子体单元4010可与远程等离子体单元配接器4015、隔离器4020、压力板4025、入口配接器4030、扩散器4035或混合歧管4040中的一或多个耦合。混合歧管4040可与处理腔室4005的顶部耦合，并且可与到处理腔室4005的入口耦合。
远程等离子体单元配接器4015可在第一端4011处与远程等离子体单元4010耦合，并且可在与第一端4011相对的第二端4012处与隔离器4020耦合。穿过远程等离子体单元配接器4015可限定一个或多个通道。在第一端4010处可限定到通道4013的开口或端口。通道4013可被中心限定在远程等离子体单元配接器4015内，并且可由在与穿过远程等离子体单元配接器4015的中心轴线(其可在来自远程等离子体单元4010的流动的方向上)正交的方向上的第一横截面积表征。通道4013的直径可等于从远程等离子体单元4010的出口端口或与该出口端口相同。通道4013可由从第一端4011到第二端4012的长度表征。通道4013可延伸穿过远程等离子体单元配接器4015的整个长度，或小于从第一端4011到第二端4012的长度的长度。例如，通道4013可延伸小于从第一端4011到第二端4012的长度的一半，通道4013可延伸从第一端4011到第二端4012的长度的一半，通道4013可延伸大于从第一端4011到第二端4012的长度的一半，或通道4013可延伸从远程等离子体单元配接器4015的第一端4011到第二端4012的长度的约一半。
远程等离子体单元配接器4015也可限定被限定在远程等离子体单元配接器4015下面的一个或多个沟槽4014。沟槽4014可以是或包括被限定在在远程等离子体单元配接器4015内的一个或多个环形凹陷，以允许放置O形环或弹性组件，这可允许与隔离器4020耦合。
在实施例中，隔离器4020可与远程等离子体单元配接器4015的第二端4012耦合。隔离器4020可以是或包括绕着隔离器通道4021的环形构件。隔离器通道4021可与在穿过远程等离子体单元配接器4015的流动的方向上的中心轴轴向对准。隔离器通道4021可以由在与穿过隔离器4020的流动的方向正交的方向上的第二横截面积表征。第二横截面积可等于、大于或小于通道4013的第一横截面积。在实施例中，隔离器通道4021可以由直径表征，该直径大于、等于或约等于穿过远程等离子体单元配接器4015的通道4013的直径。
隔离器4020可由与远程等离子体单元配接器4015、混合歧管4040或任何其他腔室部件类似或不同的材料制成。在一些实施例中，尽管远程等离子体单元配接器4015和混合歧管4040可由铝(包括铝氧化物、在一或多个表面上处理的铝、或一些其他材料)制成或包括铝，但隔离器4020可以是或包括与其他腔室部件相比导热性较低的材料。在一些实施例中，隔离器4020可以是或包括陶瓷、塑料、或其他热绝缘部件，该部件经配置以在远程等离子体单元4010与腔室4005之间提供热障。在操作期间，远程等离子体单元4010可经冷却或相对于腔室4005在较低温度下操作，而腔室4005可经加热或相对于远程等离子体单元4010在较高温度下操作。提供陶瓷或热绝缘隔离器4020可防止或限制部件之间的热干扰、电气干扰或其他干扰。
压力板4025可与隔离器4020耦合。在实施例中，压力板4025可以是或包括铝或另一材料，并且压力板4025可由一种材料制成或包括该种材料，在实施例中，该种材料与远程等离子体单元配接器4015或混合歧管4040类似或不同。压力板4025可限定穿过压力板4025的中心孔4023。中心孔4023可由穿过压力板4025从靠近隔离器通道4021的一部分到压力板4025的相对侧面的渐缩形状表征。中心孔4023靠近隔离器通道4021的一部分可由与流动方向正交的横截面积表征，该横截面积等于或类似于隔离器通道4021的横截面积。中心孔4023可由跨压力板4025的长度大于或约10％的渐缩百分比表征，并且在实施例中，可由大于或约20％、大于或约30％、大于或约40％、大于或约50％、大于或约60％、大于或约70％、大于或约80％、大于或约90％、大于或约100％、大于或约150％、大于或约200％、大于或约300％或更大的渐缩百分比表征。压力板4025也可限定被限定在隔离器4020下面的一个或多个沟槽4024。沟槽4024可以是或包括限定在压力板4025内的一或多个环形凹陷，以允许放置O形环或弹性组件，这可允许与隔离器4020耦合。
入口配接器4030可在第一端4026处与压力板4025耦合，并且在与第一端4026相对的第二端4027处与扩散器4035耦合。入口配接器4030可限定被限定为穿过入口配接器4030的中心通道4028。中心通道4028可由第一部分4029a及第二部分4029b表征。第一部分4029a可穿过入口配接器4030从第一端4026延伸至第一长度，其中中心通道4028可过渡至第二部分4029b，第二部分4029b可延伸至第二端4027。第一部分4029a可由第一横截面积或直径表征，并且第二部分4029b可由小于第一部分的第一横截面积或直径的第二横截面积或直径表征。在实施例中，第一部分4029a的横截面积或直径可以是第二部分4029b的横截面积或直径的两倍大，并且在实施例中可多达或大于约三倍大、大于或约4倍大、大于或约5倍大、大于或约6倍大、大于或约7倍大、大于或约8倍大、大于或约9倍大、大于或约10倍大或更大。在实施例中，中心通道4028可经配置以提供从远程等离子体单元4010递送的前驱物的等离子体流出物，其可经过远程等离子体单元配接器4015的通道4013、隔离器4020的隔离器通道4021、以及压力板4025的中心孔4023。
入口配接器4030也可限定一个或多个第二通道4031，其可从第一部分4029a下方延伸到第二端4027或延伸穿过第二端4027。第二通道4031可由与穿过入口配接器4030的中心轴正交的方向上的第二横截面积表征。在实施例中，第二横截面积可小于第一部分4029a的第一横截面积，并且可大于第二部分4029b的横截面积或直径。第二通道4031可延伸至在第二端4027处的从入口配接器4030的出口(exit)，并且可以为从远程等离子体单元4010交替递送的前驱物(诸如第一旁路前驱物)提供从配接器4030的外出口(egress)。例如，第二通道4031可以从沿着入口配接器4030的外表面(诸如侧面)限定的第一端口4032流体进入，其可绕过远程等离子体单元4010。第一端口4032可沿着入口配接器4030的长度在第一部分4029a处或下方，并且可经配置以提供到第二通道4031的流体通路。
第二通道4031可将前驱物递送穿过入口配接器4030并递送出第二端4027。第二通道4031可以被限定在在第一部分4029a与第二端4027之间的入口配接器4030的区域中。在实施例中，第二通道4031可能无法从中心通道4028进入。第二通道4031可经配置以维持前驱物与从远程等离子体单元4010被递送至中心通道4028中的等离子体流出物流体隔离。第一旁路前驱物可以不接触等离子体流出物，直至穿过第二端4027离开入口配接器4030。第二通道4031可包括限定在配接器4030中的一或多个通道。第二通道4031可中心定位在配接器4030内，并且可与中心通道4028相关联。例如，在实施例中，第二通道4031可与中心通道4028同心对准并限定为绕着中心通道4028。在实施例中，第二通道4031可以是部分穿过入口配接器4030的长度或垂直横截面延伸的环形或圆柱通道。在一些实施例中，第二通道4031也可以是绕着中心通道4028径向延伸的多个通道。
入口配接器4030也可限定一或多个第三通道4033，其可从第一部分4029a下方延伸到第二端4027或延伸穿过第二端4027，并且可从等分第一端口4032的平面下方延伸。第三通道4033可由在与穿过入口配接器4030的中心轴正交的方向上的第三横截面积表征。在实施例中，第三横截面积可小于第一部分4029a的横截面积，并且可大于第二部分4029b的横截面积或直径。第三横截面积也可等于或类似于如示出的第一部分4029a的横截面积或直径。例如，第三通道4033的外直径可等同于第一部分4029a的外直径，或可小于第一部分4029a的外直径。第三通道4033可在第二端4027处延伸到从入口配接器4030的出口，并且可以为从远程等离子体单元4010交替递送的前驱物(诸如第二旁路前驱物)提供从配接器4030的外出口(egress)。例如，第三通道4033可从沿着入口配接器4030的外表面(诸如侧面)限定的第二端口4034流体进入，其可绕过远程等离子体单元4010。第二端口4034可位于入口配接器4030的与第一端口4032相对的侧面或部分上。第二端口4034可沿着入口配接器4030的长度在第一部分4029a处或下方，并且可经配置以提供到第三通道4033的流体通路。在实施例中，第二端口4034也可沿着入口配接器4030的长度在第一端口4032处或下方。
第三通道4033可将第二旁路前驱物递送穿过入口配接器4030并递送出第二端4027。第三通道4033可被限定在第一部分4029a与第二端4027之间的入口配接器4030的区域中限定。在实施例中，第三通道4033可能无法从中心通道4028进入。第三通道4033可经配置以维持第二旁路前驱物与从远程等离子体单元4010被递送至中心通道4028中的等离子体流出物流体隔离，或与穿过第一端口4032被递送至第二通道4031中的第一旁路前驱物流体隔离。第二旁路前驱物可以不接触等离子体流出物或第一旁路前驱物，直至穿过第二端4027离开入口配接器4030。第三通道4033可包括被限定在配接器4030中的一个或多个通道。第三通道4033可被中心定位在配接器4030内，并且可与中心通道4028和第二通道4031相关联。例如，在实施例中，第三通道4033可绕着中心通道4028同心对准并限定，并且可绕着第二通道4031同心对准并限定。在实施例中，第三通道4033可以是部分延伸穿过入口配接器4030的长度或垂直截面的第二环形或圆柱通道。在一些实施例中，第三通道4033也可以是绕着中心通道4028径向延伸的多个通道。
扩散器4035可定位在入口配接器4030与混合歧管4040之间以维持穿过入口配接器4030递送的前驱物被流体隔离直至进入混合歧管4040。扩散器4035可由一或多个通道(诸如穿过扩散器4035限定的圆柱或环形通道)表征。在实施例中，扩散器4035可限定第一通道4036或中心通道、第二通道4037及第三通道4038。该通道可由与入口配接器4030的中心通道4028的第二部分4029b、第二通道4031、及第三通道4033类似的尺寸或直径表征。例如，每个通道可将入口配接器通道延伸到混合歧管4040。第二通道4037和第三通道4038每一个可以是绕着第一通道4036限定的环形通道，并且第一通道4036、第二通道4037和第三通道4038可在实施例中同心对准并被限定为穿过扩散器4035。
扩散器4035可附加地绕着扩散器4035限定一个或多个沟槽4039。例如，在实施例中，扩散器4035可限定第一沟槽4039a、第二沟槽4039b和第三沟槽4039c，这可允许在入口配接器4030与扩散器4035之间放置O形环或弹性构件。在实施例中，每个沟槽4039可以是在被限定为穿过扩散器4035的一个或多个通道外部径向放置的环形沟槽。第一沟槽4039a可被定位在从第一通道4036径向向外，并且可被定位在第一通道4036与第二通道4037之间。第二沟槽4039b可被定位在从第二通道4037径向向外，并且可被定位在第二通道4037与第三通道4038之间。第三沟槽4039c可被定位在从第三通道4038径向向外。每个沟槽4039的直径可大于其相关联的通道及其可被定位在径向向外的通道。沟槽可实现在入口配接器4030与扩散器4035之间的改良密封以确保前驱物在部件之间维持被流体隔离，并且不发生通道之间的泄漏。
混合歧管4040可在第一端4041处与扩散器4035耦合，并且可在第二端4042处与腔室4005耦合。混合歧管4040可在第一端4041处限定入口4043。入口4043可提供从扩散器4035的流体通路，并且入口4043可由等于或约等于与穿过扩散器4035的第三通道4038的直径的直径表征。入口4043可限定穿过混合歧管4040的通道4044的一部分，并且通道4044可由限定通道4044的轮廓的一个或多个部分构成。入口4043可以是混合歧管4040的在穿过通道4044的流动方向上的第一部分。入口4043可由一长度表征，该长度可小于混合歧管4040在流动方向上的长度的一半。入口4043的长度也可小于混合歧管4040的长度的三分之一，并且在实施例中可小于混合歧管4040的长度的四分之一。入口4043可从扩散器4035接收每种前驱物，并且可允许混合前驱物，该前驱物可维持被流体隔离，直至被递送至混合歧管4040。
入口4043可延伸到通道4044的第二部分，该第二部分可以是或包括渐缩部分4045。渐缩部分4045可从第一直径延伸到小于第一直径的第二直径，该第一直径等于或类似于入口4043的直径。在一些实施例中，第二直径可约为或小于第一直径的一半。在实施例中，渐缩部分4045可由大于或约10％、大于或约20％、大于或约30％、大于或约40％、大于或约50％、大于或约60％、大于或约70％、大于或约80％、大于或约90％、大于或约100％、大于或约150％、大于或约200％、大于或约300％或更大的渐缩百分比表征。
渐缩部分4045可过渡至通道4044的第三区域，该第三区域可以是扩口部分4046。扩口部分4046可从渐缩部分4045延伸到第二端4042处的混合歧管4040的出口。扩口部分4046可从第一直径延伸到大于第一直径的第二直径，该第一直径等于渐缩部分4045的第二直径。在一些实施例中，第二直径可约为或大于第一直径的两倍。在实施例中，扩口部分4046可由大于或约10％、大于或约20％、大于或约30％、大于或约40％、大于或约50％、大于或约60％、大于或约70％、大于或约80％、大于或约90％、大于或约100％、大于或约150％、大于或约200％、大于或约300％或更大的扩口百分比表征。
扩口部分4046可以为穿过混合歧管4040递送的前驱物提供穿过第二端4042经由出口4047的外出口(egress)。通道4044穿过混合歧管4040的部分可经配置以在将混合之前驱物提供至腔室4005中之前提供递送至混合歧管的前驱物的适当或彻底混合。与传统技术不同，通过在递送至腔室之前执行蚀刻剂或前驱物混合，本系统可提供在绕着腔室及基板分配之前具有均匀性质的蚀刻剂。以此方式，利用本技术执行的工艺可具有跨基板表面的更均匀结果。
处理腔室4005可包括以堆叠布置的数个部件。腔室堆叠可包括气盒4050、阻隔板4060、面板4070、离子抑制组件4080以及盖间隔件4090。部件可用于穿过腔室分配前驱物或一组前驱物，以向用于处理的基板提供蚀刻剂或其他前驱物的均匀递送。在实施例中，这些部件可以是堆叠板，每个板至少部分限定腔室4005的外部。
气盒4050可限定腔室入口4052。中心通道4054可被限定为穿过气盒4050以将前驱物递送至腔室4005中。入口4052可与混合歧管4040的出口4047对准。在实施例中，入口4052和/或中心通道4054可由相似直径表征。中心通道4054可延伸穿过气盒4050并且经配置以将一或多种前驱物递送至由气盒4050从上方限定的容积4057中。气盒4050可包括第一表面4053(诸如顶表面)以及与第一表面4053相对的第二表面4055(诸如气盒4050的底表面)。在实施例中，顶表面4053可以是平坦或实质上平坦的表面。加热器4048可与顶表面4053耦合。
在实施例中，加热器4048可经配置以加热腔室4005，并且可传导性加热每个盖堆叠部件。加热器4048可以是任何种类的加热器，包括流体加热器、电气加热器、微波加热器或经配置以将热传导性递送至腔室4005的其他组件。在一些实施例中，加热器4048可以是或包括以绕着气盒4050的第一表面4053的环形图案形成的电气加热器。加热器可被限定为跨气盒4050并围绕混合歧管4040。加热器可以是板加热器或电阻式组件加热器，该加热器可经配置以提供多达、约或大于约2,000W热量，并且可经配置以提供大于或约2,500W、大于或约3,000W、大于或约3,500W、大于或约4,000W、大于或约4,500W、大于或约5,000W或更多的热量。
加热器4048可经配置以产生多达、约或大于约50℃的可变腔室部件温度，并且在实施例中可经配置以产生大于或约75℃、大于或约100℃、大于或约150℃、大于或约200℃、大于或约250℃、大于或约300℃、或更高的腔室部件温度。加热器4048可经配置以将独立部件(诸如离子抑制组件4080)升高至这些温度中的任何温度，以促进处理操作，诸如退火。在一些处理操作中，基板可朝向离子抑制组件4080升高以用于退火操作，并且加热器4048可经调节以将加热器的温度传导性升高至上述任何特定温度，或在任何所述的温度内或之间的任何温度范围内。
气盒4050的第二表面4055可与阻隔板4060耦合。阻隔板4060可由一直径表征，该直径等于或相似于气盒4050的直径。阻隔板4060可限定穿过阻隔板4060的多个孔4063，仅示出该孔的样品，这可允许分配来自容积4057的前驱物(诸如蚀刻剂)，并且可开始分配前驱物穿过腔室4005，用于均匀递送至基板。尽管仅示出一些孔4063，应理解阻隔板4060可具有限定为穿过该结构的任何数量的孔4063。阻隔板4060可由在阻隔板4060的外径处升高的环形部分4065以及在阻隔板4060的外径处降低的环形部分4066表征。升高的环形部分4065可以为阻隔板4060提供结构刚性，并且在实施例中可限定容积4057的侧面或外径。阻隔板4060也可从下方限定容积4057的底部。容积4057可允许来自气盒4050的中心通道4054的前驱物在经过阻隔板4060的孔4063之前的分配。降低的环形部分4066也可以为阻隔板4060提供结构刚性，并且在实施例中可限定第二容积4058的侧面或外径。阻隔板4060也可从上方限定容积4058的顶部，而容积4058的底部可由面板4070从下方限定。
面板4070可包括第一表面4072和与第一表面4072相对的第二表面4074。面板4070可在第一表面4072处与阻隔板4060耦合，第一表面4072可接合阻隔板4060的降低的环形部分4066。面板4070可在第二表面4074的内部处限定延伸至第三容积4075的凸缘4073，第三容积4075至少部分被限定在面板4070内或由面板4070限定。例如，面板4070可限定第三容积4075的侧面或外径以及从上方限定容积4075的顶部，而离子抑制组件4080可从下方限定第三容积4075。尽管未在图8中示出，面板4070可限定穿过该面板的多个通道，诸如先前关于腔室2000所描述。
离子抑制组件4080可靠近面板4070的第二表面4074定位，并且可在第二表面4074处与面板4070耦合。离子抑制组件4080可类似于上文描述的离子抑制件2023，并且可经配置以减少离子迁移至容纳基板的腔室4005的处理区域中。尽管未在图8中示出，离子抑制组件4080可限定穿过如图6A中示出的结构的多个孔。在实施例中，气盒4050、阻隔板4060、面板4070和离子抑制组件4080可耦合在一起，并且在实施例中可直接耦合在一起。通过直接耦合部件，由加热器4048产生的热可穿过部件传导以维持特定腔室温度，可利用部件之间的较少变化维持该特定腔室温度。离子抑制组件4080也可接触盖间隔件4090，离子抑制组件4080和盖间隔件4090可一起至少部分限定在处理期间维持基板于其中的等离子体处理区域。
转到图9，示出了根据本技术的实施例的入口配接器500的仰视部分平面图。在实施例中，入口配接器5000可类似于入口配接器4030。如所示出，入口配接器可包括绕着入口配接器5000的中心轴同心对准的三个通道。应理解，在其他实施例中，入口配接器5000可包括与所示出的相比更多或更少的通道。入口配接器5000可包括中心通道5005，中心通道5005可从如先前论述的远程等离子体单元流体进入。中心通道5005可完全穿过入口配接器5000延伸。第二通道5010可绕着中心通道5005延伸，并且可以为附加地或与穿过中心通道5005的前驱物的等离子体流出物交替地递送的第一旁路前驱物提供流体通路。第二通道5010可从沿着入口配接器5000的外部限定的第一端口5012进入。第二通道5010可与中心通道5005同心对准，并且可维持第一旁路前驱物与等离子体流出物或穿过中心通道5005流动的不同前驱物流体隔离。
第三通道5015可绕着中心通道5005和第二通道5010延伸，并且可以为另外或与穿过中心通道5005的前驱物的等离子体流出物和穿过第二通道5010的第一旁路前驱物交替地递送的第二旁路前驱物提供流体通路。第三通道5015可从沿着入口配接器5000外部限定的第二端口5017进入，第二端口5017可位于入口配接器5000与第一端口5012相对的侧面上。第二端口5017以及第三通道5015可位于穿过第一端口5012的水平面下方。第三通道5015可与中心通道5005同心对准，并且可维持第二旁路前驱物与等离子体流出物或穿过中心通道5005流动的不同前驱物以及穿过第二通道5010递送的第一旁路前驱物流体隔离。
在实施例中，第二通道5010和第三通道5015可以是被限定为至少部分穿过入口配接器5000的长度的环形通道。通道也可以是绕着中心通道5005径向限定的多个通道。通过为前驱物提供三个独立路径，可利用不同容积和/或流速的前驱物，从而提供对前驱物递送和蚀刻剂产生的较高控制。可以用一种或多种载送气体递送每种前驱物，并且可在递送至与入口配接器5000流体耦合的处理腔室中之前精细调节所显影的蚀刻剂。
本发明的示例实施例的以上描述已经出于说明及描述的目的而呈现。不旨在为详尽的或将本发明限制于所描述的精确形式，并且鉴于以上教示，众多修改和变化是可能的。
在以上描述中，出于解释的目的，已经阐述数个细节来提供对本技术的各个实施例的理解。然而，对于本领域技术人员将显而易见，某些实施例可在不具有这些细节中的一些细节或在具有额外细节的情况下实践。
在已经描述了若干实施例的情况下，本领域技术人员将了解可使用各种修改、替代构造及等效物而不脱离本发明的精神。另外，尚未描述数个熟知工艺及组件以避免不必要地混淆本发明。另外，任何具体实施例的细节可能不总是存在于该实施例的变化中或可添加到其他实施例。
在提供值范围的情况下，应当理解，除非上下文另外明确指示，也具体地公开在该范围的上限与下限之间每个中间值直到下限单位的十分之一。在任何所述值或所述范围中的中间值与任何其他所述值或该所述范围中的中间值之间的每个更小范围涵盖在内。可能有所述范围中任何具体被排除在外的限值，这些较小范围的上限及下限可独立地包括在该范围内或排除于该范围外，并且任一个限值、没有一个限值或两个限值包括在更小范围中的每个范围也在本发明内涵盖。在所述范围包括限值中的一个或两个的情况下，排除任一个或两个那些所包括的限值的范围也包括在内。
如本文及所附权利要求中所使用，除非上下文另外明确指明，单数形式“一(a)”、“一(an)”及“the(该)”包括复数引用。因此，例如，提及“一种方法”包括多个此种方法，并且提及“该层”包括提及一或多层及本领域技术人员已知的等效物等等。出于清楚及理解的目的，本发明现已经详细描述。然而，将了解，某些改变及修改可在所附权利要求的范围内实践。
本文引用的所有公开、专利及专利申请案的全部内容出于所有目的以引用方式并入本文中。所有这些均不被承认为现有技术。

Claims (15)

1.一种半导体处理系统，所述系统包含：
远程等离子体区域；
处理区域，所述处理区域通过通道与所述远程等离子体区域流体耦合；以及
气体入口，所述气体入口流体耦合至所述通道，其中：
所述气体入口限定在进入所述处理区域之前不经过所述远程等离子体区域的气体的流动路径，
所述处理区域包含经配置以支撑基板的基座，
所述处理区域至少部分由侧壁和喷淋头限定，并且
所述侧壁和喷淋头镀有镍。
2.如权利要求1所述的系统，其中从所述通道到出口但不包括所述通道的所述处理区域由镀有镍的表面限定，所述出口是从所述处理区域到泵的出口。
3.如权利要求1所述的系统，所述系统进一步包含设置在所述基座的圆周上的圆环，其中所述圆环镀有镍。
4.一种蚀刻方法，所述方法包含：
在腔室的第一部分中混合等离子体流出物与气体以形成第一混合物；
在所述腔室的第二部分中使所述第一混合物流到基板；
使所述第一混合物与所述基板反应以相对于第二层选择性蚀刻第一层；
形成第二混合物，所述第二混合物包含来自所述第一混合物与所述基板反应的产物，其中：
所述腔室的所述第一部分和所述第二部分包含镀镍材料。
5.如权利要求4所述的方法，其中：
所述第一混合物在所述腔室中的从所述第一部分到所述第二部分的路径中流动，并且
所述路径由所述腔室的镀镍部件限定。
6.如权利要求4所述的方法，其中：
所述第一层是热氧化硅层，
所述第二层是硅层，并且
所述第一混合物与所述基板反应包含蚀刻小于1埃的所述第二层和大于50埃的所述第二层。
7.如权利要求4所述的方法，其中所述腔室的所述第二部分在10Torr或更低的压力下。
8.如权利要求4所述的方法，其中所述等离子体流出物包含来自使氨和含氟气体流过等离子体的流出物。
9.如权利要求8所述的方法，其中所述含氟气体包含NF3或HF。
10.如权利要求4所述的方法，其中所述等离子体流出物包含来自使氨、NF3、氩、H2、氦及HF流过等离子体的流出物。
11.如权利要求4所述的方法，进一步包含：
使所述等离子体流出物流过所述腔室的不包含镀镍材料的第三部分。
12.如权利要求4所述的方法，进一步包含：
使所述第二混合物流过所述腔室的第三部分以离开所述腔室，其中所述腔室的所述第三部分包含镀镍材料。
13.如权利要求4所述的方法，进一步包含将氟原子或氢原子吸附至所述镀镍材料上。
14.一种蚀刻方法，所述方法包含：
使包含氨和含氟气体的第一气体流过等离子体以形成等离子体流出物；
使所述等离子体流出物流过腔室的第一部分；
在腔室的第二部分中混合包含氨的第二气体与所述等离子体流出物以形成第一混合物；
在所述腔室的第三部分中使所述第一混合物流到基板；
使所述第一混合物与所述基板反应以相对于硅层选择性蚀刻氧化硅层；
形成第二混合物，所述第二混合物包含来自所述第一混合物与所述基板反应的产物；以及
使所述第二混合物流过所述腔室的第四部分以离开所述腔室，其中：
所述腔室的所述第一部分不包含镀镍材料，
所述腔室的所述第二部分、所述第三部分和所述第四部分包含镀镍材料，
所述腔室的所述第三部分在10Torr或更低的压力下，并且
使所述第一混合物与所述基板反应包含蚀刻小于1埃的所述硅层以及大于50埃的所述氧化硅层。
15.如权利要求14所述的方法，其中：
所述第一混合物在所述腔室中的从所述第二部分到所述第四部分的路径中流动，并且
所述路径由所述腔室的镀镍部件限定。
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