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WO2016068711A3 - Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions - Google Patents

Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions Download PDF

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Publication number
WO2016068711A3
WO2016068711A3 PCT/NL2015/050759 NL2015050759W WO2016068711A3 WO 2016068711 A3 WO2016068711 A3 WO 2016068711A3 NL 2015050759 W NL2015050759 W NL 2015050759W WO 2016068711 A3 WO2016068711 A3 WO 2016068711A3
Authority
WO
WIPO (PCT)
Prior art keywords
back side
solar cells
situ doped
side contacted
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/NL2015/050759
Other languages
French (fr)
Other versions
WO2016068711A4 (en
WO2016068711A2 (en
Inventor
Guangtao YANG
Andrea INGENITO
Olindo ISABELLA
Miroslav Zeman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universiteit Delft
Original Assignee
Technische Universiteit Delft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universiteit Delft filed Critical Technische Universiteit Delft
Publication of WO2016068711A2 publication Critical patent/WO2016068711A2/en
Publication of WO2016068711A3 publication Critical patent/WO2016068711A3/en
Publication of WO2016068711A4 publication Critical patent/WO2016068711A4/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

The present invention is in the field of a process for making back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon oxide regions and optionally in-situ doped silicon regions, and back side contacted solar cells. A solar cell, or photovoltaic (PV) cell, is an electrical device that converts energy of light, typically sun light (hence "solar"), directly into electricity by the so-called photovoltaic effect. The solar cell may be considered a photoelectric cell, having electrical characteristics, such as current, voltage, resistance, and fill factor, which vary when exposed to light and which vary from type of cell to type.
PCT/NL2015/050759 2014-10-31 2015-10-30 Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions Ceased WO2016068711A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2013722A NL2013722B1 (en) 2014-10-31 2014-10-31 Back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon and/or silicon oxide regions.
NL2013722 2014-10-31

Publications (3)

Publication Number Publication Date
WO2016068711A2 WO2016068711A2 (en) 2016-05-06
WO2016068711A3 true WO2016068711A3 (en) 2016-06-23
WO2016068711A4 WO2016068711A4 (en) 2016-08-11

Family

ID=52146631

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2015/050759 Ceased WO2016068711A2 (en) 2014-10-31 2015-10-30 Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions

Country Status (2)

Country Link
NL (1) NL2013722B1 (en)
WO (1) WO2016068711A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106684160A (en) * 2016-12-30 2017-05-17 中国科学院微电子研究所 Back-junction back-contact solar cell
NL2019634B1 (en) * 2017-09-27 2019-04-03 Univ Delft Tech Solar cells with transparent contacts based on poly-silicon-oxide
WO2019163786A1 (en) * 2018-02-23 2019-08-29 株式会社カネカ Method for producing solar cell
CN111742416B (en) * 2018-02-23 2024-03-19 株式会社钟化 Solar cell manufacturing method
CN108666377A (en) * 2018-07-11 2018-10-16 泰州隆基乐叶光伏科技有限公司 A kind of p-type back contact solar cell and its preparation method
CN108807565B (en) * 2018-07-13 2024-04-16 苏州太阳井新能源有限公司 Passivation contact electrode structure, solar cell applicable to passivation contact electrode structure and manufacturing method of passivation contact electrode structure
CN110911505B (en) * 2019-12-19 2025-02-07 通威太阳能(眉山)有限公司 Heterojunction solar cell and method for manufacturing the same
CN114725225A (en) * 2021-01-06 2022-07-08 浙江爱旭太阳能科技有限公司 Efficient P-type IBC battery and preparation method thereof
CN114068729B (en) * 2021-11-23 2025-08-01 浙江爱旭太阳能科技有限公司 Double-sided back contact solar cell and back structure thereof
CN114256385B (en) * 2021-12-22 2024-01-09 韩华新能源（启东）有限公司 TBC back contact solar cell and preparation method thereof
CN114447161A (en) * 2022-01-27 2022-05-06 浙江兴芯半导体有限公司 Manufacturing method of POLO-IBC battery
CN114649425B (en) * 2022-05-20 2022-08-26 正泰新能科技有限公司 TopCon crystalline silicon solar cell and preparation method thereof
CN116110996A (en) * 2022-10-28 2023-05-12 天合光能股份有限公司 Solar cell and its preparation method
CN116110978B (en) * 2023-02-08 2024-05-28 浙江晶科能源有限公司 Solar cell, preparation method thereof and photovoltaic module
CN116093192B (en) * 2023-04-10 2023-06-20 福建金石能源有限公司 A kind of combined passivation back contact battery with high current density and preparation method thereof
CN117153950B (en) * 2023-10-19 2024-10-22 无锡松煜科技有限公司 Low-temperature boron activation method
CN118198187B (en) * 2024-03-18 2025-10-31 天合光能股份有限公司 Back contact solar cell and preparation method thereof
CN120813116A (en) * 2025-09-09 2025-10-17 浙江晶科能源有限公司 Solar cell, method for manufacturing same, laminated cell, and photovoltaic module

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2239788A1 (en) * 2008-01-30 2010-10-13 Kyocera Corporation Solar battery element and solar battery element manufacturing method
CN103346211A (en) * 2013-06-26 2013-10-09 英利集团有限公司 Back contact solar battery and preparing method thereof
WO2013172056A1 (en) * 2012-05-14 2013-11-21 三菱電機株式会社 Photoelectric conversion device, method for manufacturing same, and photoelectric conversion module
US20140096819A1 (en) * 2011-05-27 2014-04-10 REC Modules Pte., Ltd. Solar cell and method for producing same
US20140166095A1 (en) * 2012-12-19 2014-06-19 Paul Loscutoff Hybrid emitter all back contact solar cell
EP2797124A1 (en) * 2013-04-23 2014-10-29 LG Electronics, Inc. Solar cell and method for manufacturing the same
EP2822041A1 (en) * 2013-07-05 2015-01-07 LG Electronics, Inc. Solar cell and method for manufacturing the same
EP2879189A2 (en) * 2013-11-28 2015-06-03 LG Electronics Inc. Solar cell and method of manufacturing the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2239788A1 (en) * 2008-01-30 2010-10-13 Kyocera Corporation Solar battery element and solar battery element manufacturing method
US20140096819A1 (en) * 2011-05-27 2014-04-10 REC Modules Pte., Ltd. Solar cell and method for producing same
WO2013172056A1 (en) * 2012-05-14 2013-11-21 三菱電機株式会社 Photoelectric conversion device, method for manufacturing same, and photoelectric conversion module
US20150007867A1 (en) * 2012-05-14 2015-01-08 Mitsubishi Electric Corporation Photoelectric conversion device, manufacturing method thereof, and photoelectric conversion module
US20140166095A1 (en) * 2012-12-19 2014-06-19 Paul Loscutoff Hybrid emitter all back contact solar cell
EP2797124A1 (en) * 2013-04-23 2014-10-29 LG Electronics, Inc. Solar cell and method for manufacturing the same
CN103346211A (en) * 2013-06-26 2013-10-09 英利集团有限公司 Back contact solar battery and preparing method thereof
EP2822041A1 (en) * 2013-07-05 2015-01-07 LG Electronics, Inc. Solar cell and method for manufacturing the same
EP2879189A2 (en) * 2013-11-28 2015-06-03 LG Electronics Inc. Solar cell and method of manufacturing the same

Also Published As

Publication number Publication date
WO2016068711A4 (en) 2016-08-11
WO2016068711A2 (en) 2016-05-06
NL2013722B1 (en) 2016-10-04

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