CN120813116A - Solar cell, method for manufacturing same, laminated cell, and photovoltaic module - Google Patents
Solar cell, method for manufacturing same, laminated cell, and photovoltaic moduleInfo
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- CN120813116A CN120813116A CN202511287324.2A CN202511287324A CN120813116A CN 120813116 A CN120813116 A CN 120813116A CN 202511287324 A CN202511287324 A CN 202511287324A CN 120813116 A CN120813116 A CN 120813116A
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Abstract
本申请涉及光伏技术领域，提供一种太阳能电池及其制造方法、叠层电池以及光伏组件，至少有利于提高太阳能电池的效率和良率。太阳能电池包括：电池本体，电池本体的第一表面包括第一区和第二区，第一区包括第一部分和第二部分，第二区包括第三部分和第四部分；第一区上包括层叠的第一隧穿层、第一掺杂层、第一玻璃层，其中第一部分上的第一玻璃层上包括第二掺杂层；第二区上包括层叠的第二隧穿层和第二掺杂层位于第二隧穿层的表面；钝化层位于第一玻璃层的表面以及第二掺杂层上；第一细栅位于第二部分的钝化层上；第一主栅位于第一部分的钝化层上；第二细栅位于第四部分的钝化层上；第二主栅位于第三部分的钝化层上。
The present application relates to the field of photovoltaic technology and provides a solar cell and a manufacturing method thereof, a laminated cell, and a photovoltaic module, which are at least conducive to improving the efficiency and yield of the solar cell. The solar cell includes: a cell body, wherein the first surface of the cell body includes a first region and a second region, the first region includes a first portion and a second portion, and the second region includes a third portion and a fourth portion; the first region includes a stacked first tunneling layer, a first doping layer, and a first glass layer, wherein the first glass layer on the first portion includes a second doping layer; the second region includes a stacked second tunneling layer and a second doping layer located on the surface of the second tunneling layer; a passivation layer is located on the surface of the first glass layer and on the second doping layer; a first fine grid is located on the passivation layer of the second portion; a first main grid is located on the passivation layer of the first portion; a second fine grid is located on the passivation layer of the fourth portion; and a second main grid is located on the passivation layer of the third portion.
Description
Technical Field
The application relates to the technical field of photovoltaics, in particular to a solar cell, a manufacturing method thereof, a laminated cell and a photovoltaic module.
Background
Currently, with the gradual depletion of fossil energy, solar cells are increasingly used as new energy alternatives. A solar cell is a device that converts solar light energy into electrical energy. The solar cell generates carriers by utilizing the photovoltaic principle, and then the carriers are led out by using the electrodes, so that the electric energy can be effectively utilized.
IBC cells (interdigitated back electrode contact cells, INTERDIGITATED BACK CONTACT) refer to a back-junction back-contact solar cell structure in which the positive and negative metal electrodes are arranged in an interdigitated fashion on the back side of the cell, with the p-n junction on the back side of the cell. Wherein the back junction refers to the p-n junction being located on the back of the cell. The IBC battery is one of photovoltaic cells with highest conversion efficiency at present, the battery takes monocrystalline silicon as a matrix, a p-n junction and a metal electrode are both positioned on the back of the battery, and the front of the battery is not shielded from light by the metal electrode, so that very high short-circuit current and conversion efficiency can be obtained.
However, in the process of preparing the IBC battery, there are many reasons for influencing the battery performance of the IBC battery, so that further improvement of the photoelectric conversion efficiency of the IBC battery is limited.
Disclosure of Invention
The embodiment of the application provides a solar cell, a manufacturing method thereof, a laminated cell and a photovoltaic module, which are at least beneficial to improving the efficiency and yield of the solar cell.
According to some embodiments of the present application, an aspect of the present application provides a solar cell comprising a cell body comprising opposing first and second surfaces, the first surface comprising first and second regions disposed at intervals, the first region comprising a first portion extending in a first direction and a plurality of second portions extending in a second direction, the second region comprising a third portion extending in the first direction and a plurality of fourth portions extending in the second direction; the solar cell comprises a cell body, a first tunneling layer, a first doping layer, a first glass layer, a second tunneling layer, a second doping layer, a passivation layer, a first thin gate, a second thin gate, a passivation layer and a second thin gate, wherein the first tunneling layer is positioned on the surface of the first tunneling layer far away from the cell body, the first doping layer is positioned on the surface of the first tunneling layer far away from the cell body, the first glass layer is positioned on the surface of the first doping layer far away from the first tunneling layer, the second tunneling layer is positioned on the surface of the second tunneling layer far away from the cell body, the first glass layer is positioned on one side of the first part far away from the first doping layer, the passivation layer is positioned on the surface of the first glass layer and one side of the second doping layer is positioned on the surface of the first part far away from the second tunneling layer, the first thin gate is positioned on the passivation layer of the second part, the first thin gate is electrically connected with the first thin gate, the first thin gate is electrically connected with the second thin gate is positioned on the passivation layer of the second thin gate.
In some embodiments, the solar cell further comprises a leakage portion, the leakage portion is made of the same material as the second doped layer, the leakage portion is located on two sides of the first doped layer on the first portion in the second direction, the leakage portion extends in the second direction, and two ends of the leakage portion are respectively in electrical contact with the second doped layer on the first portion and the second doped layer on the fourth portion.
In some embodiments, the width of the leakage portion in the first direction is less than the width of the fourth portion in the first direction.
In some embodiments, the number of the leakage portions is plural in the first direction, and a sum of widths of the plural leakage portions in the first direction is smaller than a width of any one of the fourth portions in the first direction.
In some embodiments, the sum of the widths of the leakage portions in the first direction is a first width, the width of any fourth portion in the first direction is a second width, and the ratio of the first width to the second width is 0.1-0.8.
In some embodiments, the total leakage current generated by the leakage section is less than 5A at a voltage of 3V.
In some embodiments, the first thin gate is also electrically connected to the second doped layer on the first portion.
In some embodiments, a width of the second doped layer located on the first portion in the second direction is less than or equal to a width of the first portion.
In some embodiments, the first main gate includes a main body portion extending in a first direction and a plurality of extension portions extending in a second direction, the extension portions being in electrical contact with the first thin gate, the extension portions having a width in the second direction that is greater than a width of the main body portion.
In some embodiments, the width of the body portion is less than the width of the second doped layer in the second direction, and the width of the extension is greater than the width of the second doped layer and less than or equal to the width of the first portion.
In some embodiments, the first primary grid is located on a surface of the first fine grid remote from the battery body at the juncture of the first primary grid and the first fine grid, and the second primary grid is located on a surface of the second fine grid remote from the battery body at the juncture of the second primary grid and the second fine grid.
In some embodiments, the second tunneling layer is also located on a sidewall of the first doped layer.
In some embodiments, the first region is spaced from the second surface by a distance equal to the distance of the second region from the second surface, and a spacer is further included between the first region and the second region.
In some embodiments, the first region is a greater distance from the second surface than the second region is from the first surface.
In some embodiments, the first glass layer has a thickness of 10nm to 50nm.
According to some embodiments of the present application, there is also provided a method of manufacturing a solar cell according to another aspect of the embodiments, including providing a cell body including opposing first and second surfaces, the first surface including first and second regions disposed at intervals, the first region including a first portion extending in a first direction and a plurality of second portions extending in a second direction, the second region including a third portion extending in the first direction and a plurality of fourth portions extending in the second direction; forming an initial first tunneling layer, an initial first doping layer and an initial first glass layer on the first surface in sequence, removing the initial first tunneling layer, the initial first doping layer and the initial first glass layer on the second region, and taking the initial first tunneling layer, the initial first doping layer and the initial first glass layer on the remaining first region as the first tunneling layer, the first doping layer and the first glass layer respectively; forming a second tunneling layer and a second doped layer, forming a second tunneling layer on the second region, forming an initial second doped layer on the second tunneling layer and the first glass layer, removing at least the initial second doped layer on the second portion, the remaining initial second doped layer serving as the second doped layer, forming a passivation layer on the surface of the first glass layer and on a side of the second doped layer away from the second tunneling layer, forming a first main gate and a second main gate and a first thin gate and a second thin gate, wherein the first main gate is on the passivation layer on the first portion, the second main gate is on the passivation layer on the third portion, the first thin gate is on the passivation layer on the second portion, the first thin gate is electrically connected with the first doped layer and is electrically contacted with the first main gate, the second thin gate is on the passivation layer on the fourth portion, the second thin gate is electrically connected with the second doped layer and is electrically contacted with the second main gate.
According to some embodiments of the present application, a laminated cell is further provided in another aspect of the embodiments of the present application, where the laminated cell includes a bottom cell, and the bottom cell is the solar cell in the above embodiments or the solar cell prepared by using the method for manufacturing the solar cell in the above embodiments, and the perovskite cell is located on one side of the bottom cell.
According to some embodiments of the present application, a photovoltaic module is further provided in a further aspect of the present application, which includes a solar cell in the above embodiment, or a solar cell manufactured by the method for manufacturing a solar cell in the above embodiment, or a stacked cell in the above embodiment, a connection member for connecting two adjacent solar cells, a glue film covering a surface of the solar cell, and a cover plate located on a side of the glue film away from the solar cell.
The technical scheme provided by the embodiment of the application has at least the following advantages:
In the solar cell provided by the embodiment of the application, the first tunneling layer, the first doping layer and the first glass layer are arranged on the first region of the cell body, and the second doping layer is arranged on the second region of the cell body and the first part of the first region. The film layer with special patterns is usually obtained by adopting a whole-surface deposition mode and then patterning treatment, and because the second doped layer is also positioned on the first part of the first region, the area of the patterning process can be reduced in the process of forming the second doped layer by adopting patterning process, the productivity is improved, and the manufacturing efficiency of the solar cell is improved.
If the second doped layer is formed by patterning in an etching mode of a laser film opening and humidifying method, the laser film opening area can be reduced, the unnecessary film opening laser area treatment is reduced, the processing efficiency is improved, the problem of avoiding large-area damage of laser is solved, and therefore the efficiency and the yield of the solar cell are improved. The second doped layer is positioned on the first glass layer of the first part, so that the first glass layer can be used as an isolation layer between the first doped layer and the second doped layer, and the problem of mutual electric leakage of the first doped layer and the second doped layer is avoided.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, which are not to be construed as limiting the embodiments unless specifically claimed, and in order to more clearly illustrate the embodiments of the present application or the concepts of the conventional art, the drawings which are required to be used in the embodiments will be briefly described below, it will be apparent that the drawings in the following description are merely some embodiments of the present application and that other drawings may be obtained from these drawings by those of ordinary skill in the art without undue burden.
Fig. 1 is a schematic structural diagram of a solar cell body according to a method for manufacturing a solar cell according to an embodiment of the present application;
FIG. 2 is a schematic cross-sectional view of FIG. 1 along the direction AA 1;
Fig. 3 is a schematic structural diagram of forming a first tunneling layer, a first doping layer and a first glass layer in a method for manufacturing a solar cell according to an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of FIG. 3 along the direction AA 1;
Fig. 5 is a schematic structural diagram corresponding to a step of forming a second tunneling layer and a second doping layer in a method for manufacturing a solar cell according to an embodiment of the present application;
FIG. 6 is a schematic cross-sectional view of FIG. 5 along the direction AA 1;
Fig. 7 is a schematic cross-sectional structure along the direction BB1 of fig. 5;
fig. 8 is a schematic cross-sectional view of fig. 5 along the direction CC 1;
FIG. 9 is a schematic cross-sectional view of FIG. 5 along DD 1;
Fig. 10 is a schematic structural diagram corresponding to a step of forming a passivation layer in a method for manufacturing a solar cell according to an embodiment of the present application;
FIG. 11 is a schematic cross-sectional view of FIG. 10 along the direction AA 1;
Fig. 12 is a schematic cross-sectional structure along the direction BB1 of fig. 10;
fig. 13 is a schematic cross-sectional structure along the direction CC1 of fig. 10;
FIG. 14 is a schematic cross-sectional view of FIG. 10 along DD 1;
fig. 15 is a schematic structural diagram of forming a first main gate, a second main gate, a first fine gate and a second fine gate in a method for manufacturing a solar cell according to an embodiment of the present application;
FIG. 16 is a schematic cross-sectional view of FIG. 15 along the direction AA 1;
fig. 17 is a schematic cross-sectional structure along the direction BB1 of fig. 15;
fig. 18 is a schematic cross-sectional structure along the direction CC1 of fig. 15;
Fig. 19 is a schematic cross-sectional view of fig. 15 along DD 1.
Reference numerals illustrate:
100. The battery comprises a battery body, 101, a first surface, 102, a second surface, 1011, a first region, 1012, a second region, 111, a first tunneling layer, 121, a first doping layer, 131, a first glass layer, 112, a second tunneling layer, 122, a second doping layer, 170, a leakage part, 140, a passivation layer, 161, a first main grid, 162, a second main grid, 151, a first fine grid, 152, a second fine grid, 1611, a main body part, 1612, an extension part, X, a first direction, Y, a second direction, I, a first part, II, a second part, III, a third part, IV and a fourth part.
Detailed Description
Currently, the fabrication process for preparing IBC cells requires at least two depositions and two patterning to form the interdigitated structure. The method comprises the steps of forming a first doped polysilicon layer of a first conductivity type on a substrate, performing first patterning treatment to remove part of the first doped polysilicon layer and expose the surface of the substrate, forming a second doped polysilicon layer of a second conductivity type on the substrate and the first doped polysilicon layer, and performing second patterning treatment to remove the second doped polysilicon on the first doped polysilicon layer. The two-time patterning treatment comprises laser film opening and humidification etching, the laser film opening area is large, the laser processing time is long, the productivity is low, the marking time is reduced, and the laser processing efficiency is improved, so that the method is one of the currently faced bottlenecks. In addition, as the laser pulse energy may cause dislocation and interface passivation damage to the lower film layer in the laser processing process, the laser film opening area is properly reduced, especially the treatment of unnecessary film opening laser areas is reduced, the processing efficiency is improved, and meanwhile, the problem of avoiding large-area damage of laser is also achieved, so that the efficiency and yield of the solar cell are improved.
The embodiment of the application provides a solar cell, a manufacturing method thereof, a laminated cell and a photovoltaic module, which are at least beneficial to improving the efficiency and yield of the solar cell.
In the description of embodiments of the present application, the technical terms "first," "second," and the like are used merely to distinguish between different objects and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated, a particular order or a primary or secondary relationship.
In the description of the embodiments of the present application, the meaning of "plurality" is two or more unless explicitly defined otherwise.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
In the description of the embodiments of the present application, the positional or positional relationship indicated by technical terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are based on the positional or positional relationship shown in the drawings, and are merely for convenience of description and simplification of the description, and do not indicate or imply that the apparatus or element referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the embodiments of the present application.
In the drawings corresponding to the embodiments of the present application, thicknesses and areas of layers are exaggerated for better understanding and convenience of description. When an element is referred to as being "on" or "on" another element, it can be "directly on" the other element or be present between the two elements. Conversely, when it is described that one component is formed on or provided with another component surface, then it is meant that there is no third component between the two components. Further, when it is described that one component is "substantially" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor on a partial edge of the entire surface.
In the description of embodiments of the present application, when a certain component "includes" another component, the other component is not excluded unless otherwise stated, and the other component may be further included.
The terminology used in the description of the various described embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting. As used in the description of the various embodiments described and in the appended claims, "component" is also intended to include the plural form unless the context clearly indicates otherwise.
Embodiments of the present application will be described in detail below with reference to the attached drawings. However, it will be understood by those of ordinary skill in the art that in various embodiments of the present application, numerous specific details are set forth in order to provide a thorough understanding of the present application. The claimed application may be practiced without these specific details and with various changes and modifications based on the following embodiments.
According to some embodiments of the present application, a method for manufacturing a solar cell is provided, including:
Referring to fig. 1 and 2, a battery body 100 is provided, the battery body 100 including opposite first and second surfaces 101 and 102, the first surface 101 including first and second regions 1011 and 1012 disposed at intervals, the first region 1011 including a first portion I extending in a first direction X and a plurality of second portions II extending in a second direction Y, the second region 1012 including a third portion III extending in the first direction X and a plurality of fourth portions IV extending in the second direction Y. The plurality of first regions 1011 and the plurality of second regions 1012 are alternately arranged in the second direction Y to form an interdigital arrangement.
Referring to fig. 3 and 4, the first tunneling layer 111, the first doping layer 121, and the first glass layer 131 are formed by sequentially forming an initial first tunneling layer, an initial first doping layer, and an initial first glass layer on the first surface 101, removing the initial first tunneling layer, the initial first doping layer, and the initial first glass layer on the second region 1012, and the initial first tunneling layer, the initial first doping layer, and the initial first glass layer on the remaining first region 1011 are respectively used as the first tunneling layer 111, the first doping layer 121, and the first glass layer 131.
The process of forming the initial first tunneling layer includes a thermal oxidation process or a deposition process, which may employ chemical vapor deposition, physical vapor deposition, atomic layer deposition, or the like.
The step of forming the initial first doped layer and the initial first glass layer includes forming an initial first amorphous silicon layer, and performing doping diffusion on the initial first amorphous silicon layer to convert the initial first amorphous silicon layer into the initial first doped layer and the initial first glass layer. The doping diffusion may be a boron diffusion process or a phosphorus diffusion process, and the corresponding initial first glass layer is borosilicate glass or phosphosilicate glass.
The doping element in the first doping layer is one of P type and N type, and the doping element in the second doping layer formed later is the other of P type and N type. The N-type doping element may be any one of V group elements such As phosphorus (P) element, bismuth (Bi) element, antimony (Sb) element, arsenic (As) element, etc., and the P-type doping element may be any one of III group elements such As boron (B) element, aluminum (Al) element, gallium (Ga) element, indium (In) element, etc.
The process of removing the initial first tunneling layer, the initial first doped layer and the initial first glass layer on the second region may include performing a laser film opening process on the initial first glass layer on the second region, and then removing the initial first glass layer, the initial first doped layer and the initial first glass layer by wet etching.
In the illustration, taking the surface of the first region 1011 and the surface of the second region 1012 as flush, the adjacent front projections of the first region 1011 on the first surface 101 and the front projections of the second region 1012 on the first surface 101 are spaced apart to form isolation regions, then the surface of the battery body may be exposed during the wet etching to remove the initial first doped layer and the initial first glass layer.
In other embodiments, the distance between the first region and the second surface is greater than the distance between the second region and the second surface, that is, the surfaces of the first region and the second region are staggered, the orthographic projection of the adjacent first region on the first surface and the orthographic projection of the adjacent second region on the first surface can be connected, and an isolation region is formed through the staggered height, so that the first doped layer and the second doped layer formed subsequently are isolated. Thus, in the process of removing the initial first doping layer and the initial first glass layer by wet etching, part of the thickness of the battery body is also removed.
Referring to fig. 5 to 9, a second tunneling layer 112 and a second doping layer 122 are formed, namely, the second tunneling layer 112 is formed on the second region 1012, an initial second doping layer is formed on the second tunneling layer 112 and the first glass layer 131, at least the initial second doping layer on the second portion II is removed, and the remaining initial second doping layer serves as the second doping layer 122.
In the illustration, the isolation region is formed by taking the example that the front projection of the first region 1011 on the first surface 101 and the front projection of the second region 1012 on the first surface 101 are spaced apart from each other, and the initial second doped layer of the isolation region and the second tunneling layer 112 are also removed during the process of removing the initial second doped layer on the second portion II.
In addition, taking the example that the width of the second doped layer 122 on the first portion I in the second direction Y is smaller than the width of the first portion I in the drawing, a portion of the second doped layer 122 on the first portion I is also removed in the process of removing the initial second doped layer on the second portion II. In other embodiments, the width of the second doped layer on the first portion along the second direction may be equal to the first portion.
In the illustration, the second tunneling layer 112 is formed by oxidation, so that the first glass layer 131 is not oxidized, and the second tunneling layer 112 is not formed. In other embodiments, the second tunneling layer may be formed by deposition, so that the first glass layer is further formed with the second tunneling layer, and correspondingly, the second tunneling layer is further formed between the second doped layer of the first portion and the first glass layer.
The step of forming the initial second doped layer comprises the steps of forming an initial second amorphous silicon layer, and carrying out doping diffusion on the initial second amorphous silicon layer so as to convert the initial second amorphous silicon layer into the initial second doped layer, wherein the initial second doped layer can be provided with an initial second glass layer, and the corresponding second doped layer can be provided with a second glass layer. The doping diffusion can be boron diffusion treatment or phosphorus diffusion treatment, and the corresponding initial second glass layer is borosilicate glass or phosphosilicate glass.
In some embodiments, removing the initial second doped layer on the second portion includes laser-opening the initial second doped layer and removing the initial second doped layer by wet etching.
Referring to fig. 5 and 8 in combination, in some embodiments, during the removal of the initial second doped layer, a portion of the initial second doped layer between the first portion I and the fourth portion IV may also remain as a drain portion 170, the drain portion 170 being located at both sides of the first doped layer 121 on the first portion I in the second direction Y, the drain portion 170 extending in the second direction Y, and both ends being in electrical contact with the second doped layer 122 on the first portion I and the second doped layer 122 on the fourth portion IV, respectively. Local leakage current can be formed between the second doped layer 122 on the fourth portion IV and the first doped layer 121 on the first portion I through the leakage part 170, and the risk of hot spots of the solar cell can be reduced due to the leakage of a smaller area.
In the drawing, the first doped layer 121 is in direct contact with the drain portion 170 on both sides in the second direction Y, for example. In other embodiments, the thickness of the two side wall portions of the first doped layer along the second direction may be oxidized into an ultrathin oxide layer, and the ultrathin oxide layer is located between the leakage portion and the first doped layer, and the leakage path may still be formed between the second doped layer on the fourth portion and the first doped layer on the first portion due to the tunneling characteristic of the ultrathin oxide layer.
Referring to fig. 10 to 14, a passivation layer 140 is formed in such a manner that the passivation layer 140 is located on the surface of the first glass layer 131 and on a side of the second doping layer 122 away from the second tunneling layer 112.
In the illustration, the first region 1011 is separated from the second region 1012 by a spacer, and the passivation layer 140 also covers the surface of the spacer.
If the second doped layer is further provided with a second glass layer, the passivation layer is positioned on the surface of the second glass layer far away from the second doped layer.
Referring to fig. 15 to 19, first and second main gates 161 and 162 and first and second thin gates 151 and 152 are formed, the first main gate 161 being on the passivation layer 140 of the first portion I, the second main gate 162 being on the passivation layer 140 of the third portion III, the first thin gate 151 being on the passivation layer 140 of the second portion II, the first thin gate 151 being electrically connected to the first doped layer 121 and being in electrical contact with the first main gate 161, the second thin gate 152 being on the passivation layer 140 of the fourth portion IV, the second thin gate 152 being electrically connected to the second doped layer 122 and being in electrical contact with the second main gate 162.
In some embodiments, the first main gate 161 and the second main gate 162 may be formed first, and then the first fine gate 151 and the second fine gate 152 may be formed. As such, referring to fig. 17, the second fine gate 152 may cover the top surface of the second main gate 162. The positional relationship between the first main gate 161 and the first fine gate 151 may refer to the positional relationship between the second main gate 162 and the second fine gate 152, and will not be described herein.
In other embodiments, the first and second thin gates 151 and 152 may be formed first, and then the first and second main gates 161 and 162 may be formed. Wherein referring to the first main gate 161 and the first thin gate 151 on the left side of fig. 16, the first thin gate 151 may be in electrical contact with both sidewalls of the first main gate 161 in the second direction Y, or referring to the first main gate 161 and the first thin gate 151 on the right side of fig. 15 and 16 in combination, the first main gate 161 may include a main body portion 1611 extending in the first direction X and an extension portion 1612 extending in the second direction Y, the width of the extension portion 1612 in the second direction Y being greater than the width of the main body portion 1611 in the second direction Y, both ends of the extension portion 1612 covering the top surface of the first thin gate 151 to be in electrical contact with the first thin gate 151, or the second main gate 162 being entirely located on the top surface of the first thin gate 151. The positional relationship between the second main gate 162 and the second fine gate 152 may refer to the positional relationship between the first main gate 161 and the second main gate 162, and will not be described herein.
Compared with the mode of forming the main grid and then forming the thin grid, the problem that the thin grid is broken is easily caused due to the height difference between the top surface of the main grid and the top surface of the passivation layer. Forming the thin gate first and then forming the main gate may be advantageous in reducing the problem of gate breakage due to the larger size of the main gate, less affected by the height difference, and lower likelihood of gate breakage.
In the illustration, the first fine gate 151 and the second fine gate 152 are made of a burn-through paste, so that the first fine gate 151 is electrically connected to the first doped layer 121 through the passivation layer 140, and the second fine gate 152 is electrically connected to the second doped layer 122 through the passivation layer 140. In other embodiments, the first thin gate and the second thin gate may be formed by using a laser-assisted sintering process, so that neither the first thin gate nor the second thin gate integrally penetrates the passivation layer, and the first thin gate and the second thin gate are electrically connected to the first doped layer and the second doped layer by adopting a local point contact manner, respectively.
In the method for manufacturing a solar cell according to the embodiment of the application, the first tunneling layer 111, the first doped layer 121 and the first glass layer 131 are formed on the first region 1011 of the cell body 100, and then the second doped layer 122 is formed on the second region 1012 and the first portion I of the first region 1011. The film layer with special pattern is usually obtained by adopting a whole deposition mode and then patterning, and because the second doped layer 122 is also positioned on the first part I of the first region 1011, the area of the patterning process can be reduced in the process of patterning the initial second doped layer, the productivity is improved, and the manufacturing efficiency of the solar cell is improved.
If the second doped layer 122 is formed by patterning in the etching mode of the laser film opening and humidifying method, the laser film opening area can be reduced, the unnecessary film opening laser area treatment is reduced, the processing efficiency is improved, the problem of avoiding large-area damage of laser is solved, and the efficiency and the yield of the solar cell are improved. Since the second doped layer 122 is located on the first glass layer 131 of the first portion I, the first glass layer 131 can serve as an isolation layer between the first doped layer 121 and the second doped layer 122, so as to avoid the problem of mutual leakage.
Since the second doped layer 122 on the first portion I is not electrically connected to the second doped layer 122 on the second region 1012, even if the first main gate 161 or the first thin gate 151 is electrically connected to the second doped layer 122 on the first portion I, no leakage problem is generated, and the second doped layer 122 can also serve as an electrical transmission medium between the first main gate 161 and the first thin gate 151, improving the electrical transmission efficiency of the first main gate 161 and the first thin gate 151.
According to some embodiments of the present application, another aspect of the present application provides a solar cell, which may be manufactured by using the method for manufacturing a solar cell in the foregoing embodiments. The same or corresponding parts as those of the previous embodiment may be referred to for corresponding description of the previous embodiment, and detailed description thereof will be omitted.
Referring to fig. 15 to 19, the solar cell provided by the embodiment of the present application includes a cell body 100, a first tunneling layer 111, a first doping layer 121, a first glass layer 131, a second tunneling layer 112, a second doping layer 122, a passivation layer 140, a first fine gate 151, a first main gate 161, a second fine gate 152, and a second main gate 162.
Referring to fig. 1 and 2, a battery body 100 includes opposite first and second surfaces 101 and 102, the first surface 101 including first and second regions 1011 and 1012 disposed at intervals, the first region 1011 including a first portion I extending in a first direction X and a plurality of second portions II extending in a second direction Y, and the second region 1012 including a third portion III extending in the first direction X and a plurality of fourth portions IV extending in the second direction Y. The plurality of first regions 1011 and the plurality of second regions 1012 are alternately arranged in the second direction Y to form an interdigital arrangement.
The battery body 100 may be an N-type semiconductor substrate or a P-type semiconductor substrate.
In some embodiments, the second surface 102 may have a textured surface, such as a pyramid-shaped textured surface, so that the textured structure may enhance the absorption and utilization of the incident light by the cell body 100, thereby advantageously improving the light conversion efficiency of the solar cell.
In some embodiments, the first surface 101 is a back surface, and the second surface 102 is a light receiving surface, i.e., the solar cell is a single-sided cell. In other embodiments, the first surface 101 and the second surface 102 both serve as light receiving surfaces, i.e. the solar cell is a bifacial cell.
The first tunneling layer 111 is located on the surface of the first region 1011.
The first doping layer 121 is located on the surface of the first tunneling layer 111 away from the battery body 100.
The first glass layer 131 is located on the surface of the first doped layer 121 away from the first tunneling layer 111.
The second tunneling layer 112 is located on the surface of the second region 1012.
The second doped layer 122 is located on the surface of the second tunneling layer 112 away from the battery body 100 and on the side of the first glass layer 131 on the first portion I away from the first doped layer 121.
The passivation layer 140 is located on the surface of the first glass layer 131 and on the side of the second doped layer 122 away from the second tunneling layer 112.
The first thin gate 151 is located on the passivation layer 140 of the second portion II and is electrically connected with the first doped layer 121.
The first main gate 161 is located on the passivation layer 140 of the first portion I and is in electrical contact with the first fine gate 151.
The second fine gate 152 is located on the passivation layer 140 of the fourth portion IV and is electrically connected with the second doping layer 122.
The second main gate 162 is located on the passivation layer 140 of the third portion III and is in electrical contact with the second fine gate 152.
Referring to fig. 5, 8, 13 and 18, the solar cell may further include a drain portion 170 having a material identical to that of the second doping layer 122, the drain portion 170 being located at both sides of the first doping layer 121 on the first portion I in the second direction Y, the drain portion 170 extending in the second direction Y and electrically contacting the second doping layer 122 on the first portion I and the second doping layer 122 on the fourth portion IV at both ends thereof, respectively.
In some embodiments, the width of the leakage 170 in the first direction X is less than the width of the fourth portion IV in the first direction X. Thus, the leakage current generated by the leakage portion 170 is prevented from being too large, and the efficiency of the solar cell is prevented from being reduced.
In some embodiments, the number of the leakage portions 170 is plural in the first direction X, and the sum of the widths of the plural leakage portions 170 in the first direction X is smaller than the width of any one of the fourth portions IV in the first direction X. For the second doped layer 122 on the fourth portion IV of the same second region 1012 and the first doped layer 121 on the first portion I of the same first region 1011, a local leakage current is formed therebetween by the plurality of leakage sections 170, and the sum of the widths of the plurality of leakage sections 170 in the first direction X needs to be smaller than the width of any one of the fourth portions IV in the first direction X, so that the problem of excessive leakage current can be avoided.
In some embodiments, the sum of the widths of the drain portions 170 along the first direction X is a first width, the width of any fourth portion IV along the first direction is a second width, and the ratio of the first width to the second width is 0.1 to 0.8, for example, may be specifically 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7 or 0.8. This further ensures that leakage current between the first doped layer 121 and the second doped layer 122 can reduce the risk of hot spots in the solar cell while avoiding the problem of excessive leakage current.
In some embodiments, the total leakage current generated by the leakage portion 170 is less than 5A at a voltage of 3V. That is, at a voltage of 3V, the total leakage current between the first doped layer 121 and the second doped layer 122 is less than 5A, which can reduce the risk of hot spots of the solar cell while avoiding causing a reduction in efficiency of the solar cell.
Referring to the first thin gate 151 on the right side in fig. 16, the first thin gate 151 may be further electrically connected with the second doping layer 122 on the first portion I. Since the second doped layer 122 on the first portion I is not electrically connected to the second doped layer 122 on the second region 1012, even if the first thin gate 151 is electrically connected to the second doped layer 122 on the first portion I, no leakage problem occurs, and the second doped layer 122 can serve as an electrical transmission medium between the first thin gates 151, thereby being beneficial to improving the current collection efficiency of the first thin gates 151.
Similarly, the first main gate 161 on the first portion I may be electrically connected to the second doped layer 122.
Referring to fig. 1, 3 and 5 in combination, in some embodiments, the width of the second doped layer 122 located on the first portion I in the second direction Y is less than or equal to the width of the first portion I. This can prevent the second doping layer 122 from affecting the electrical connection efficiency between the first thin gate and the first doping layer 121.
Referring to fig. 15 and 16, the first main gate 161 may include a main body portion 1611 extending in the first direction X and a plurality of extension portions 1612 extending in the second direction Y, the extension portions 1612 being in electrical contact with the first fine gate 151, and a width of the extension portions 1612 being greater than a width of the main body portion 1611 in the second direction Y. This can advantageously increase the electrical contact area between the first fine gate 151 and the first main gate 161, and avoid the problem of disconnection between the first fine gate 151 and the first main gate 161.
In some embodiments, in the second direction Y, the width of the body portion 1611 is less than the width of the second doped layer 122, and the width of the extension portion 1612 is greater than the width of the second doped layer 122 and less than or equal to the width of the first portion I. This ensures that no disconnection problem occurs between the first fine gate 151 and the first main gate 161 while saving the slurry used for the first main gate 161 as a whole.
In some embodiments, the first main grid 161 is located at a surface of the first fine grid 151 remote from the battery body 100 at a junction of the first main grid 161 and the first fine grid 151, and the second main grid 162 is located at a surface of the second fine grid 152 remote from the battery body 100 at a junction of the second main grid 162 and the second fine grid 152. That is, the thin gate and the main gate are formed in such a manner that the first thin gate 151 and the second thin gate 152 are formed first, and then the first main gate 161 and the second main gate 162 are formed. Because the size of the thin gate is smaller than that of the main gate, if the mode of forming the main gate and then forming the thin gate is adopted, the height difference between the top surface of the main gate and the top surface of the passivation layer easily causes the problem that the thin gate is broken, and the method of forming the thin gate and then forming the main gate is beneficial to reducing the problem of broken gate.
In some embodiments, if the second tunneling layer is formed by deposition, the second tunneling layer may also be located on a sidewall of the first doped layer.
In the drawings provided in this embodiment, taking an example that the distance between the first region 1011 and the second surface 102 is equal to the distance between the second region 1012 and the second surface 102, the first region 1011 and the second region 1012 are isolated by a spacer. In other embodiments, the distance between the first region and the second surface may be greater than the distance between the second region and the first surface, i.e. the surfaces of the first region and the second region are staggered, and the orthographic projection of the adjacent first region on the first surface and the orthographic projection of the adjacent second region on the first surface may be connected, so that an isolation region is formed by the staggered height, thereby isolating the first doped layer from the second doped layer.
In some embodiments, the thickness of the first glass layer 131 is 10nm to 50nm, for example, it may be 10nm, 13nm, 15nm, 18nm, 20nm, 24nm, 26nm, 28nm, 30nm, 32nm, 35nm, 38nm, 40nm, 41nm, 44nm, 47nm or 50nm.
In the solar cell provided by the embodiment of the application, the first tunneling layer 111, the first doped layer 121 and the first glass layer 131 are disposed on the first region 1011 of the cell body 100, and the second doped layer 122 is disposed on the second region 1012 of the cell body 100 and the first portion I of the first region 1011. The film layer with special pattern is usually obtained by performing patterning treatment after the whole deposition, and since the second doped layer 122 is still located on the first portion I of the first region 1011, the area of the patterning process can be reduced, the productivity can be improved, and the manufacturing efficiency of the solar cell can be improved in the process of forming the second doped layer 122 by patterning.
If the second doped layer 122 is formed by patterning in the etching mode of the laser film opening and humidifying method, the laser film opening area can be reduced, the unnecessary film opening laser area treatment is reduced, the processing efficiency is improved, the problem of avoiding large-area damage of laser is solved, and the efficiency and the yield of the solar cell are improved. Since the second doped layer 122 is located on the first glass layer 131 of the first portion I, the first glass layer 131 can serve as an isolation layer between the first doped layer 121 and the second doped layer 122, so as to avoid the problem of mutual leakage.
Since the second doped layer 122 on the first portion I is not electrically connected to the second doped layer 122 on the second region 1012, even if the first main gate 161 or the first thin gate 151 is electrically connected to the second doped layer 122 on the first portion I, no leakage problem is generated, and the second doped layer 122 can also serve as an electrical transmission medium between the first main gate 161 and the first thin gate 151, improving the electrical transmission efficiency of the first main gate 161 and the first thin gate 151.
According to some embodiments of the present application, a laminated cell is further provided in another aspect of the embodiments of the present application, where the laminated cell includes a bottom cell, and the bottom cell is the solar cell in the above embodiments or the solar cell prepared by using the method for manufacturing the solar cell in the above embodiments, and the perovskite cell is located on one side of the bottom cell.
In some embodiments, a composite layer is included between the perovskite cell and the bottom cell.
The material of the composite layer includes Transparent Conductive Oxide (TCO), metal oxide, or ultra-thin metal.
The transparent conductive oxide comprises Indium Tin Oxide (ITO) or zinc oxide, the metal oxide comprises MoO x、WOx or V 2O5, and the ultrathin metal (1 nm-2 nm) comprises gold (Au) or silver (Ag).
The perovskite top cell may include an electron transport layer, a perovskite absorbing layer, and a hole transport layer, the perovskite absorbing layer being located between the electron transport layer and the hole transport layer.
The perovskite absorption layer has a chemical general formula of ABX 3, A can be CH 3NH3 +、NH(CH3)2 +、Cs+ or Rb +, B can be Pb 2+、Sn2+ or Sr 2+, and X can be I —、Br—、Cl—.
The electron transport layer comprises tin oxide, titanium dioxide, C 60, fullerene and derivatives thereof.
The material of the hole transport layer comprises molybdenum oxide, cuprous thiocyanate, poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ], poly 3, 4-ethylenedioxythiophene, polystyrene sulfonate (PEDOT: PSS).
In some embodiments, the hole transporting layer is located between the composite layer and the perovskite absorbing layer, and the electron transporting layer is located on a side of the perovskite absorbing layer remote from the composite layer. In other embodiments, the electron transport layer is located between the composite layer and the perovskite absorber layer, and the hole transport layer is located on a side of the perovskite absorber layer remote from the composite layer.
According to some embodiments of the present application, a photovoltaic module is further provided in a further aspect of the present application, where the photovoltaic module includes a cell, which is a solar cell in the above embodiment, or a solar cell manufactured by the method for manufacturing a solar cell in the above embodiment, or a stacked cell in the above embodiment, a connection member for connecting two adjacent cell pieces, a glue film covering a surface of the cell, and a cover plate, where the cover plate is located on a side of the glue film away from the cell.
The connecting part comprises bus bars and welding strips, the welding strips are used for connecting adjacent battery pieces to form battery strings, the welding strips are used for transmitting current generated by the battery strings to the bus bars, and the bus bars are used for collecting and transmitting the current from a plurality of battery strings to the junction box, so that effective conduction of the current is ensured.
The adhesive film can be made of organic packaging adhesive films such as ethylene-vinyl acetate copolymer (EVA) adhesive film, polyethylene Octene Elastomer (POE) adhesive film or polyvinyl butyral (PVB) adhesive film.
The cover plate can be a glass cover plate, a plastic cover plate and the like with a light transmission function.
In some embodiments, the surface of the cover plate facing the adhesive film may be a concave-convex surface, so as to increase the utilization rate of incident light.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of carrying out the application and that various changes in form and details may be made therein without departing from the spirit and scope of the application. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the application, and the scope of the application should be assessed accordingly to that of the appended claims.
Claims (18)
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