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WO2016047714A1 - Composition de polissage - Google Patents

Composition de polissage Download PDF

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Publication number
WO2016047714A1
WO2016047714A1 PCT/JP2015/076987 JP2015076987W WO2016047714A1 WO 2016047714 A1 WO2016047714 A1 WO 2016047714A1 JP 2015076987 W JP2015076987 W JP 2015076987W WO 2016047714 A1 WO2016047714 A1 WO 2016047714A1
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WO
WIPO (PCT)
Prior art keywords
acid
polishing
polishing composition
organic compound
less
Prior art date
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PCT/JP2015/076987
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English (en)
Japanese (ja)
Inventor
章太 鈴木
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Fujimi Inc
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Fujimi Inc
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Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Priority to JP2016550372A priority Critical patent/JP6557243B2/ja
Publication of WO2016047714A1 publication Critical patent/WO2016047714A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a polishing composition used in a semiconductor device manufacturing process and a polishing method using the same.
  • CMP chemical mechanical polishing
  • CMP has been applied to each process in semiconductor manufacturing, and one aspect thereof is, for example, application to a gate formation process in transistor fabrication.
  • a Si-containing material such as silicon, polycrystalline silicon (polysilicon), or silicon nitride (silicon nitride) may be polished.
  • the polishing rate of each Si-containing material is set to some extent. There is a need to control.
  • Patent Document 2 a technique for polishing polysilicon with an acidic abrasive containing acid, abrasive grains and the like is disclosed.
  • an object of the present invention is to provide a polishing composition capable of sufficiently controlling the polishing rate of the Si-containing material.
  • A can solve the above-mentioned problems by providing a polishing composition represented by an electron-attracting group and having a pH of more than 7.5.
  • a polishing composition capable of sufficiently controlling the polishing rate of a Si-containing material can be provided.
  • X to Y indicating a range means “X or more and Y or less”.
  • operations and physical properties are measured under conditions of room temperature (20 to 25 ° C.) / Relative humidity 40 to 50% RH.
  • the present invention contains a pH adjuster and an organic compound, and the organic compound is represented by the following formula (1):
  • A is a polishing composition represented by: an electron withdrawing group and having a pH of more than 7.5.
  • the polishing rate of the Si-containing material can be sufficiently controlled. Although the detailed reason for such an effect is unclear, it is presumed to be due to the following mechanism.
  • the polishing composition of the present invention contains an organic compound, and the organic compound is represented by the following formula (1):
  • A is an electron withdrawing group.
  • the organic compound of the present invention essentially has a nitro group (—NO 2 ).
  • the nitro group (—NO 2 ) usually functions as an electron withdrawing group, but “A” in the organic compound of the present invention is such that the nitro group (—NO 2 ) and the surface of the Si-containing material are electrons. It is considered that the polishing rate of Si-containing materials typified by silicon and polysilicon can be suppressed to an appropriate level by interacting and producing a synergistic effect.
  • the polishing composition of the present invention contains a pH adjuster and is set so that the pH exceeds 7.5.
  • the pH is 7.5 or less, the surface of the Si-containing material becomes hydrophobic, and thus surface defects occur.
  • the polishing rate becomes too low, and the throughput may deteriorate.
  • the above mechanism is based on speculation, and the present invention is not limited to the above mechanism.
  • organic compound of the present invention has the following formula (1):
  • A is an electron withdrawing group.
  • the A is not particularly limited as long as it is a monovalent group having an electron-withdrawing, -OH, -F, -Cl, -Br , -I, -CF 3, -CCl 3, -CBr 3, - CN, —COR, —CON (R) 2 , —SO 2 R, —P ( ⁇ O) (OR) 2 , —CO 2 R, —C (O) R, —COSR, etc.
  • R is each independently —H, —OH, —CH 3 or —C 2 H 5 .
  • the electron withdrawing group may be in the form of a salt such as sodium salt, potassium salt or ammonium salt.
  • substitution position of A From the nitro group, it may be ortho, meta or para.
  • the organic compound is nitrophenol, nitrobenzoic acid, nitrobenzenesulfonic acid or nitrophenylphosphonic acid.
  • the organic compound is bonded to the Si-containing material and has a technical effect of more effectively controlling the polishing rate of the Si-containing material.
  • the polishing composition of the present invention has a pH of more than 7.5. If the pH is 7.5 or less, the surface of the Si-containing material becomes hydrophobic, and surface defects such as adhesion of organic substances may occur. In addition, the polishing rate becomes too low, and the throughput may deteriorate.
  • the pH of the polishing composition of the present invention may be more than 7.5, but is preferably 8 or more, more preferably 9 or more.
  • a high polishing rate also referred to as “polishing rate” in the present specification
  • the polishing rate may be too high. In particular, when it is 2000 ⁇ / min or more, there is a possibility of leading to device failure.
  • the polishing composition of the present invention contains a specific organic compound, there is an advantage that the polishing rate can be suppressed in a region / environment where such a high polishing rate is maintained. .
  • the upper limit of the pH is not particularly limited, but is less than 14, preferably 12 or less, more preferably 11 or less. By setting it as such an upper limit, handling of polishing composition becomes easy.
  • pH adjuster may be either inorganic compounds or organic compounds, but are preferably alkaline (base), alkali metal hydroxides or salts thereof, alkaline earth metals Or a salt thereof, quaternary ammonium hydroxide or a salt thereof, ammonia, an amine and the like.
  • alkali metal include potassium and sodium.
  • Specific examples of the salt include carbonate, hydrogen carbonate, sulfate, acetate, and the like.
  • Specific examples of the quaternary ammonium include tetramethylammonium, tetraethylammonium, tetrabutylammonium and the like.
  • Examples of the quaternary ammonium hydroxide compound include quaternary ammonium hydroxide or a salt thereof, and specific examples include tetramethylammonium hydroxide, tetraethylammonium hydroxide, and tetrabutylammonium hydroxide.
  • amines include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- ( ⁇ -aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, anhydrous piperazine Piperazine hexahydrate, 1- (2-aminoethyl) piperazine, N-methylpiperazine, guanidine and the like. These bases may be used individually by 1 type, and may be used in combination of 2 or more type.
  • ammonia, ammonium salts, alkali metal hydroxides, alkali metal salts, quaternary ammonium hydroxide compounds, and amines are preferable. More preferably, ammonia, potassium compound, sodium hydroxide, potassium hydroxide, quaternary ammonium hydroxide compound, ammonium bicarbonate, ammonium carbonate, sodium bicarbonate, and sodium carbonate are applied. Moreover, it is more preferable that the polishing composition contains a potassium compound as a base from the viewpoint of preventing metal contamination. Examples of the potassium compound include potassium hydroxide or salt, and specific examples include potassium hydroxide, potassium carbonate, potassium hydrogen carbonate, potassium sulfate, potassium acetate, potassium chloride and the like.
  • an acid pH adjuster may be used as appropriate.
  • the acid include inorganic acids such as sulfuric acid, nitric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid and phosphoric acid; Formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid N-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, Examples thereof include carboxylic acids such as tartaric acid, citric acid and
  • the polishing composition of the present invention preferably contains abrasive grains.
  • the abrasive used may be any of inorganic particles, organic particles, and organic-inorganic composite particles.
  • the inorganic particles include particles made of metal oxides such as silica, alumina, ceria, titania, silicon nitride particles, silicon carbide particles, and boron nitride particles.
  • Specific examples of the organic particles include polymethyl methacrylate (PMMA) particles.
  • PMMA polymethyl methacrylate
  • silica is preferable, and colloidal silica is particularly preferable from the viewpoint of suppressing generation of polishing flaws.
  • ⁇ Abrasive grains may be surface-modified.
  • Such surface-modified abrasive grains are obtained, for example, by mixing a metal such as aluminum, titanium or zirconium or an oxide thereof with the abrasive grains and doping the surface of the abrasive grains or fixing an organic acid. Can do.
  • colloidal silica having an organic acid immobilized thereon is particularly preferred.
  • the organic acid is immobilized on the surface of the colloidal silica contained in the polishing composition, for example, by chemically bonding a functional group of the organic acid to the surface of the colloidal silica. If the colloidal silica and the organic acid are simply allowed to coexist, the organic acid is not fixed to the colloidal silica.
  • sulfonic acid which is a kind of organic acid
  • colloidal silica For immobilizing sulfonic acid, which is a kind of organic acid, on colloidal silica, see, for example, “Sulphonic acid-functionalized silica through quantitative oxide of thiol groups”, Chem. Commun. 246-247 (2003).
  • a silane coupling agent having a thiol group such as 3-mercaptopropyltrimethoxysilane is coupled to colloidal silica and then oxidized with hydrogen peroxide to fix the sulfonic acid on the surface.
  • the colloidal silica thus obtained can be obtained.
  • colloidal silica for example, “Novel Silane Coupling Agents, Containing, Photo 28, 2-Nitrobenzyl Ester for GasotropyCarboxySepoxyGlass. 229 (2000).
  • colloidal silica having a carboxylic acid immobilized on the surface can be obtained by irradiating light after coupling a silane coupling agent containing a photoreactive 2-nitrobenzyl ester to colloidal silica. .
  • the abrasive grains in the polishing composition are not limited to true spheres, and preferably have a certain aspect ratio.
  • the upper limit of the aspect ratio is preferably less than 1.4, more preferably 1.3 or less, and even more preferably 1.25 or less. Within such a range, the surface roughness caused by the shape of the abrasive grains can be made favorable. There is also a technical effect that the polishing rate of the Si-containing material can be controlled more appropriately.
  • the aspect ratio is an average of values obtained by dividing the length of the longest side of the smallest rectangle circumscribing the image of the abrasive grains by a scanning electron microscope by the length of the shorter side of the same rectangle, It can be obtained using general image analysis software. In the examples, it was obtained using Mac-view manufactured by Mountec.
  • the lower limit of the average primary particle diameter of the abrasive grains in the polishing composition is preferably 5 nm or more, more preferably 7 nm or more, further preferably 10 nm or more, and still more preferably 20 nm or more. Yes, particularly preferably 25 nm or more.
  • the upper limit of the average primary particle diameter of the abrasive grains is preferably 200 nm or less, more preferably 150 nm or less, further preferably 100 nm or less, still more preferably 70 nm or less, and further preferably 50 nm or less. It is particularly preferred.
  • the polishing rate of the object to be polished by the polishing composition can be controlled more appropriately, and dishing occurs on the surface of the object to be polished after polishing with the polishing composition. It can be suppressed more.
  • the average primary particle diameter of the abrasive grains is calculated based on, for example, the specific surface area of the abrasive grains measured by the BET method.
  • the lower limit of the average secondary particle diameter of the abrasive grains in the polishing composition is preferably 25 nm or more, more preferably 30 nm or more, further preferably 35 nm or more, and preferably 40 nm or more. Even more preferably, it is particularly preferably 50 nm or more.
  • the upper limit of the average secondary particle diameter of the abrasive grains is preferably 300 nm or less, more preferably 260 nm or less, further preferably 220 nm or less, still more preferably 150 nm or less, and more preferably 100 nm or less. Particularly preferred. Within such a range, the polishing rate of the polishing object by the polishing composition can be controlled more appropriately, and surface defects occur on the surface of the polishing object after polishing with the polishing composition. Can be further suppressed.
  • the secondary particles referred to here are particles formed by association of abrasive grains in the polishing composition, and the average secondary particle diameter of the secondary particles is measured by, for example, a dynamic light scattering method. be able to.
  • the particle diameter D90 when the cumulative particle weight reaches 90% of the total particle weight from the fine particle side and 10 of the total particle weight of all the particles. % The lower limit of the ratio D90 / D10 with respect to the particle diameter D10 is preferably 1.3 or more, more preferably 1.4 or more, and even more preferably 1.5 or more. preferable.
  • the particle diameter D90 and the total particle weight of all particles when the cumulative particle weight reaches 90% of the total particle weight from the fine particle side are not particularly limited, but is preferably 5.0 or less, more preferably 3.0 or less, and 2.2 The following is even more preferable.
  • the polishing rate of the object to be polished can be controlled more appropriately, and the occurrence of surface defects on the surface of the object to be polished after polishing with the polishing composition can be further suppressed. it can.
  • the lower limit of the content of the abrasive grains in the polishing composition is preferably 0.005% by mass or more, more preferably 0.05% by mass or more, and 0.5% by mass or more. More preferably, it is more preferably 1% by mass or more, and particularly preferably 3% by mass or more. When the lower limit is such, the polishing rate is improved.
  • the upper limit of the content of the abrasive grains in the polishing composition is preferably 50% by mass or less, more preferably 30% by mass or less, and further preferably 20% by mass or less, 15 More preferably, it is more preferably 10% by mass or less.
  • the cost of the polishing composition can be suppressed, and the occurrence of surface defects on the surface of the object to be polished after polishing using the polishing composition can be further suppressed.
  • the polishing composition of the present invention may further contain other components such as an oxidant, a complexing agent, a surfactant, a water-soluble polymer, a metal anticorrosive, a fungicide, and a preservative, as necessary.
  • an oxidant such as an oxidant, a complexing agent, a surfactant, a water-soluble polymer, a metal anticorrosive, a fungicide, and a preservative, as necessary.
  • oxidizing agent examples include hydrogen peroxide, peracetic acid, percarbonate, urea peroxide, perchloric acid; persulfates such as sodium persulfate, potassium persulfate, and ammonium persulfate. These oxidizing agents may be used alone or in combination of two or more. Among them, persulfate and hydrogen peroxide are preferable, and hydrogen peroxide is particularly preferable.
  • the lower limit of the content (concentration) of the oxidizing agent in the polishing composition is preferably 0.01% by mass or more, and more preferably 0.05% by mass or more. By setting the lower limit in this way, there is an advantage that the polishing rate by the polishing composition is improved.
  • the upper limit of content (concentration) of the oxidizing agent in polishing composition is 10 mass% or less, More preferably, it is 5 mass% or less. By setting the upper limit in this way, the material cost of the polishing composition can be suppressed, and in addition, there is an advantage that the load of the treatment of the polishing composition after polishing use, that is, the waste liquid treatment can be reduced. . In addition, there is an advantage that excessive oxidation of the surface of the object to be polished by the oxidizing agent hardly occurs.
  • the complexing agent has an action of chemically etching the surface of the object to be polished, and improves the polishing rate of the object to be polished by the polishing composition.
  • complexing agents examples include inorganic acids or salts thereof, organic acids or salts thereof, nitrile compounds, amino acids, and chelating agents. These complexing agents may be used alone or in admixture of two or more.
  • the complexing agent may be a commercially available product or a synthetic product.
  • inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, carbonic acid, boric acid, tetrafluoroboric acid, hypophosphorous acid, phosphorous acid, phosphoric acid, pyrophosphoric acid, and the like.
  • organic acid examples include, for example, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, monovalent carboxylic acids such as n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, lactic acid, glycolic acid, glyceric acid, benzoic acid, salicylic acid; oxalic acid, malonic acid, succinic acid, Examples thereof include carboxylic acids such as glutaric acid, gluconic acid, adipic acid, pimelic acid, maleic acid, phthalic acid, fumaric acid, malic acid, tartaric acid and citric acid. Also, sulfonic acids such as methanesulfonic acid, ethanes,
  • a salt of the inorganic acid or the organic acid may be used.
  • a salt of a weak acid and a strong base a salt of a strong acid and a weak base, or a salt of a weak acid and a weak base
  • a pH buffering action can be expected.
  • salts include, for example, potassium chloride, sodium sulfate, potassium nitrate, potassium carbonate, potassium tetrafluoroborate, potassium pyrophosphate, potassium oxalate, trisodium citrate, (+)-potassium tartrate, hexafluoro A potassium phosphate etc. are mentioned.
  • nitrile compounds include acetonitrile, aminoacetonitrile, propionitrile, butyronitrile, isobutyronitrile, benzonitrile, glutaronitrile, methoxyacetonitrile, and the like.
  • amino acids include glycine, ⁇ -alanine, ⁇ -alanine, N-methylglycine, N, N-dimethylglycine, 2-aminobutyric acid, norvaline, valine, leucine, norleucine, isoleucine, phenylalanine, proline, sarcosine, Ornithine, lysine, taurine, serine, threonine, homoserine, tyrosine, bicine, tricine, 3,5-diiodo-tyrosine, ⁇ - (3,4-dihydroxyphenyl) -alanine, thyroxine, 4-hydroxy-proline, cysteine, methionine , Ethionine, lanthionine, cystathionine, cystine, cysteic acid, aspartic acid, glutamic acid, S- (carboxymethyl) -cysteine, 4-aminobutyric acid, asparagine, glutamine,
  • chelating agents include nitrilotriacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetraacetic acid, N, N, N-trimethylenephosphonic acid, ethylenediamine-N, N, N ′, N′-tetramethylenesulfonic acid, transcyclohexane Diamine tetraacetic acid, 1,2-diaminopropanetetraacetic acid, glycol ether diamine tetraacetic acid, ethylenediamine orthohydroxyphenylacetic acid, ethylenediamine disuccinic acid (SS form), N- (2-carboxylateethyl) -L-aspartic acid, ⁇ -Alanine diacetate, 2-phosphonobutane-1,2,4-tricarboxylic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, N, N'-bis (2-hydroxybenzyl) ethylenediamine-N, N'-diace
  • At least one selected from the group consisting of an inorganic acid or a salt thereof, a carboxylic acid or a salt thereof, and a nitrile compound is preferable, from the viewpoint of stability of a complex structure with a metal compound contained in a polishing object.
  • An inorganic acid or a salt thereof is more preferable.
  • the lower limit of the content (concentration) of the complexing agent in the polishing composition is not particularly limited because it exhibits an effect even in a small amount, but is preferably 0.001 g / L or more, more preferably 1 g / L or more. By setting such a lower limit, the polishing rate is improved.
  • the upper limit of the content (concentration) of the complexing agent in the polishing composition of the present invention is preferably 20 g / L or less, more preferably 15 g / L or less. By setting it as such an upper limit, melt
  • a surfactant may be contained in the polishing composition.
  • the surfactant improves the cleaning efficiency after polishing by imparting hydrophilicity to the polished surface after polishing, and can prevent the adhesion of dirt.
  • the surfactant may be any of an anionic surfactant, a cationic surfactant, an amphoteric surfactant, and a nonionic surfactant.
  • anionic surfactant examples include polyoxyethylene alkyl ether acetic acid, polyoxyethylene alkyl sulfate ester, alkyl sulfate ester, polyoxyethylene alkyl sulfate, alkyl sulfate, alkylbenzene sulfonic acid, alkyl phosphate ester, polyoxyethylene ester Ethylene alkyl phosphate ester, polyoxyethylene sulfosuccinic acid, alkyl sulfosuccinic acid, alkyl naphthalene sulfonic acid, alkyl diphenyl ether disulfonic acid, salts thereof and the like are included.
  • cationic surfactant examples include alkyltrimethylammonium salt, alkyldimethylammonium salt, alkylbenzyldimethylammonium salt, alkylamine salt and the like.
  • amphoteric surfactants include alkyl betaines and alkyl amine oxides.
  • specific examples of the nonionic surfactant include polyoxyethylene alkyl ether, polyoxyalkylene alkyl ether, sorbitan fatty acid ester, glycerin fatty acid ester, polyoxyethylene fatty acid ester, polyoxyethylene alkylamine, alkyl alkanolamide, and the like. It is. One of these surfactants may be used alone, or two or more thereof may be used in combination.
  • the content of the surfactant in the polishing composition is preferably 0.0001 g / L or more, more preferably 0.001 g / L or more. By setting it as such a lower limit, the cleaning efficiency after polishing is further improved.
  • the content of the surfactant in the polishing composition is preferably 10 g / L or less, more preferably 1 g / L or less. By setting it as such a lower limit, the residual amount of the surfactant on the polished surface is reduced, and the cleaning efficiency is further improved.
  • Water-soluble polymer Specific examples of the water-soluble polymer include, for example, polystyrene sulfonate, polyisoprene sulfonate, polyacrylate, polymaleic acid, polyitaconic acid, polyvinyl acetate, polyvinyl alcohol, polyglycerin, polyvinyl pyrrolidone, and isoprene sulfonic acid.
  • acrylic acid copolymer polyvinylpyrrolidone polyacrylic acid copolymer, polyvinylpyrrolidone vinyl acetate copolymer, salt of naphthalene sulfonic acid formalin condensate, diallylamine hydrochloride sulfur dioxide copolymer, carboxymethylcellulose, carboxymethylcellulose Examples include salts, hydroxyethyl cellulose, hydroxypropyl cellulose, pullulan, chitosan, and chitosan salts.
  • a water-soluble polymer When a water-soluble polymer is added to the polishing composition, the surface roughness of the polishing object after polishing using the polishing composition is further reduced.
  • One of these water-soluble polymers may be used alone, or two or more thereof may be used in combination.
  • the content of the water-soluble polymer in the polishing composition is preferably 0.0001 g / L or more, more preferably 0.001 g / L or more. By setting it as such a lower limit, the surface roughness of the polishing surface by the polishing composition is further reduced.
  • the content of the water-soluble polymer in the polishing composition is preferably 10 g / L or less, more preferably 1 g / L or less. By setting such an upper limit, the remaining amount of the water-soluble polymer on the polishing surface is reduced, and the cleaning efficiency is further improved.
  • Preservatives and fungicides examples include 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one. And the like, and isothiazoline preservatives such as paraoxybenzoic acid esters and phenoxyethanol. These antiseptics and fungicides may be used alone or in combination of two or more.
  • a dispersion medium or a solvent for dispersing or dissolving each component can be usually used.
  • the dispersion medium or solvent an organic solvent and water are conceivable, and among them, water is preferably included. From the viewpoint of inhibiting the action of other components, water containing as little impurities as possible is preferable. Specifically, pure water, ultrapure water, or distilled water from which foreign ions are removed through a filter after removing impurity ions with an ion exchange resin is preferable.
  • the above-described method for producing a polishing composition can be obtained by stirring and mixing each component constituting the polishing composition of the present invention and, if necessary, other components in a dispersion medium or a solvent. it can.
  • the temperature at the time of mixing each component is not particularly limited, but is preferably 10 to 40 ° C., and may be heated to increase the dissolution rate. Further, the mixing time is not particularly limited.
  • the polishing composition of the present invention is suitable for polishing an object to be polished having a layer containing a Si-containing material.
  • the Si-containing material include silicon, simple silicon, and silicon compounds.
  • Examples of the single silicon include single crystal silicon, polycrystalline silicon (polysilicon), and amorphous silicon.
  • the silicon compound examples include silicon nitride, silicon oxide, silicon oxide, silicon carbide, and silicon nitride.
  • the silicon compound film includes a low dielectric constant film having a relative dielectric constant of 3 or less.
  • single crystal silicon or polycrystalline silicon is used.
  • a polishing apparatus As a polishing apparatus, a general holder having a polishing surface plate on which a holder for holding a substrate having a polishing object and a motor capable of changing the number of rotations are attached and a polishing pad (polishing cloth) can be attached A polishing apparatus can be used.
  • polishing pad a general nonwoven fabric, polyurethane, porous fluororesin, or the like can be used without particular limitation. It is preferable that the polishing pad is grooved so that the polishing composition accumulates.
  • the polishing conditions are not particularly limited.
  • the rotation speed of the polishing platen and the carrier rotation speed are preferably independently 10 to 500 rpm, and the pressure applied to the substrate having the object to be polished (polishing pressure) is 0. 1 to 10 psi is preferred.
  • the method of supplying the polishing composition to the polishing pad is not particularly limited, and for example, a method of continuously supplying with a pump or the like is employed. Although the supply amount is not limited, it is preferable that the surface of the polishing pad is always covered with the polishing composition of the present invention.
  • the substrate After completion of polishing, the substrate is washed in running water, and water droplets adhering to the substrate are removed by drying with a spin dryer or the like, and dried to obtain a substrate having a layer containing Si material.
  • a preferable polishing rate when polishing with the polishing composition of the present invention is preferably 1000 kg / min or more and less than 2000 kg / min, more preferably 1500 to 1980 kg / min, and further preferably 1850 to 1950 kg. / Min.
  • a polishing composition was prepared by mixing abrasive grains, a pH adjuster and an organic compound in ultrapure water with the composition shown in Table 1 below (mixing temperature: about 25 ° C., mixing time: about 10 minutes). .
  • the pH of the polishing composition (liquid temperature: 25 ° C.) was confirmed by a pH meter (manufactured by Horiba, Ltd., model number: LAQUA). “-” In Table 1 indicates that it was not added.
  • polishing performance evaluation Using the obtained polishing composition, the polishing rate when the silicon substrate was polished under the following polishing conditions was measured.
  • Polishing machine Single-side CMP polishing machine (ENGIS; manufactured by Engis Japan Ltd.) Polishing pad: Polyurethane pad Pressure: 3.0 psi (20.7 kPa) Plate rotation speed: 60rpm Carrier rotation speed: 60rpm Flow rate of polishing composition: 100 ml / min Polishing time: 120 sec The polishing rate was calculated by the following formula.
  • the film thickness was evaluated by calculating with a light interference type film thickness measuring device (model number: Lambda Ace, manufactured by Dainippon Screen Mfg. Co., Ltd.) and dividing the difference by the polishing time.
  • a light interference type film thickness measuring device model number: Lambda Ace, manufactured by Dainippon Screen Mfg. Co., Ltd.
  • the polishing composition has a pH of more than 7.5 and contains a specific organic compound. Because of such a configuration, it is possible to keep the polishing rate to 2000 kg / min or less while maintaining a high polishing rate.
  • the polishing rate is 2000 kg / min or more. At such a high polishing rate, there is a risk of device failure.
  • Comparative Example 2 using a polishing composition containing a specific organic compound but having a pH of 7.5 or less the polishing rate is less than 1000 kg / min. At such a low polishing rate, the throughput may be deteriorated.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

[Problème] le but de la présente invention est de proposer une composition de polissage qui peut suffisamment de réguler la vitesse de polissage d'un matériau contenant du Si. [Solution] l'invention concerne une composition de polissage qui contient un agent d'ajustement du pH et un composé organique, le composé organique étant représenté par la formule (1), à condition qu'a est un groupe attracteur d'électrons. Le pH de la composition de polissage est de préférence neutre.
PCT/JP2015/076987 2014-09-26 2015-09-24 Composition de polissage Ceased WO2016047714A1 (fr)

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JP2018145261A (ja) * 2017-03-02 2018-09-20 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨用組成物の製造方法
JP2019059921A (ja) * 2017-09-26 2019-04-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

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JP7599502B2 (ja) * 2020-10-09 2024-12-13 花王株式会社 シリコン基板用研磨液組成物

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JPH1012584A (ja) * 1996-06-27 1998-01-16 Mitsubishi Chem Corp 基体の表面処理方法及びそれに用いる有機錯化剤含有アンモニア水溶液
JP2000299320A (ja) * 1999-04-15 2000-10-24 Hitachi Ltd 配線形成方法
JP2001342454A (ja) * 2000-06-01 2001-12-14 Hitachi Ltd 研磨剤、研磨方法及び半導体装置の製造方法
US20050090109A1 (en) * 2003-10-23 2005-04-28 Carter Melvin K. CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers

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JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
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WO2012032466A1 (fr) * 2010-09-08 2012-03-15 Basf Se Compositions de polissage aqueuses contenant des dioxydes de diazénium n-substitués et/ou des sels d'oxyde de n'-hydroxy-diazénium

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JPH1012584A (ja) * 1996-06-27 1998-01-16 Mitsubishi Chem Corp 基体の表面処理方法及びそれに用いる有機錯化剤含有アンモニア水溶液
JP2000299320A (ja) * 1999-04-15 2000-10-24 Hitachi Ltd 配線形成方法
JP2001342454A (ja) * 2000-06-01 2001-12-14 Hitachi Ltd 研磨剤、研磨方法及び半導体装置の製造方法
US20050090109A1 (en) * 2003-10-23 2005-04-28 Carter Melvin K. CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018145261A (ja) * 2017-03-02 2018-09-20 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨用組成物の製造方法
JP2019059921A (ja) * 2017-09-26 2019-04-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
JP7133401B2 (ja) 2017-09-26 2022-09-08 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

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TW201619344A (zh) 2016-06-01
JP6557243B2 (ja) 2019-08-07
TWI672368B (zh) 2019-09-21

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