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WO2016052281A1 - Composition de polissage et procédé de polissage à l'aide de celle-ci - Google Patents

Composition de polissage et procédé de polissage à l'aide de celle-ci Download PDF

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Publication number
WO2016052281A1
WO2016052281A1 PCT/JP2015/076810 JP2015076810W WO2016052281A1 WO 2016052281 A1 WO2016052281 A1 WO 2016052281A1 JP 2015076810 W JP2015076810 W JP 2015076810W WO 2016052281 A1 WO2016052281 A1 WO 2016052281A1
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WIPO (PCT)
Prior art keywords
polishing
acid
polishing composition
silica
molecular weight
Prior art date
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Ceased
Application number
PCT/JP2015/076810
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English (en)
Japanese (ja)
Inventor
幸信 吉▲崎▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2015059669A external-priority patent/JP6517555B2/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Priority to KR1020177006608A priority Critical patent/KR102444499B1/ko
Priority to CN201580053307.0A priority patent/CN107075346B/zh
Publication of WO2016052281A1 publication Critical patent/WO2016052281A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a polishing composition used in a semiconductor device manufacturing process and a polishing method using the same.
  • CMP Chemical Mechanical Polishing
  • the semiconductor circuit becomes finer, the flatness required for the unevenness of the patterned wafer becomes higher, and it is required to realize high flatness on the nano order by CMP.
  • the semiconductor wafer is made of different materials such as polycrystalline silicon forming a circuit, silicon oxide which is an insulating material, and silicon nitride which protects a silicon dioxide surface which is not part of a trench or via from damage during etching. For this reason, there is a problem that a step such as dishing occurs in which a relatively soft material that easily reacts with an abrasive such as polycrystalline silicon or silicon oxide is excessively shaved compared to surrounding silicon nitride and the like, and a step remains. is there.
  • Japanese Patent Application Laid-Open No. 2012-040671 includes many polishing objects having poor chemical reactivity such as silicon nitride.
  • a polishing composition that can be polished at a higher speed than crystalline silicon or the like and that contains colloidal silica in which an organic acid is immobilized and has a pH of 6 or less is disclosed.
  • the conventional polishing composition has a problem that the above-described dishing phenomenon cannot be sufficiently suppressed and the step cannot be sufficiently eliminated.
  • an object of the present invention is to provide a polishing composition capable of sufficiently suppressing the dishing phenomenon in the polishing process and more reliably eliminating the step difference.
  • the present invention includes a silica having an organic acid immobilized on the surface and a polyoxyalkylene group-containing compound, and the polyoxyalkylene group-containing compound has a weight average molecular weight (polyethylene) determined by gel permeation chromatography (GPC).
  • GPC gel permeation chromatography
  • a polishing composition having a molecular weight distribution (in terms of glycol) having two or more peaks and a pH of 7 or less.
  • ⁇ Polishing composition> it contains a silica having an organic acid fixed on its surface and a polyoxyalkylene group-containing compound, and the polyoxyalkylene group-containing compound is weight averaged by gel permeation chromatography (GPC).
  • GPC gel permeation chromatography
  • a polishing composition having a molecular weight distribution of molecular weight (in terms of polyethylene glycol) having two or more peaks and a pH of 7 or less is provided. According to the polishing composition of the present invention having such a configuration, it is possible to sufficiently suppress the dishing phenomenon in the polishing process and more reliably eliminate the step.
  • a polyoxyalkylene such as polyethylene glycol (PEG) is used.
  • PEG polyethylene glycol
  • a group-containing compound may be added to the polishing composition. When these compounds are used, the action of hydrogen bonding or the like acts to adsorb on the surface of the polishing object such as polycrystalline silicon, and the polishing composition protects the surface of the polishing object from the mechanical action of the abrasive grains. It has been considered that the polishing rate of an object to be polished is controlled.
  • the gap in which the compound having a larger molecular weight is adsorbed can be further increased. It is considered that a compound having a small molecular weight is further adsorbed so as to fill, and as a result, a dense protective film is formed on the surface of the object to be polished, and the function of eliminating the step is further exhibited.
  • the polishing composition of the present invention includes a material to be polished containing silicon nitride (SiN) as a polishing object and a layer containing a material different from the polishing object, such as polycrystalline silicon or tetraethyl orthosilicate (TEOS).
  • SiN silicon nitride
  • TEOS tetraethyl orthosilicate
  • the “silica having an organic acid fixed on the surface” contained in the polishing composition of the present invention is silica that is used as abrasive grains and has an organic acid chemically bonded to the surface.
  • the silica includes fumed silica and colloidal silica, and colloidal silica is particularly preferable.
  • the organic acid is not particularly limited, and examples thereof include sulfonic acid, carboxylic acid, and phosphoric acid, and sulfonic acid or carboxylic acid is preferable.
  • the surface of the “silica having an organic acid fixed on the surface” contained in the polishing composition of the present invention has an acidic group derived from the organic acid (for example, a sulfo group, a carboxyl group, a phosphoric acid group, etc.). It is fixed by a covalent bond (in some cases via a linker structure).
  • silica having an organic acid fixed on the surface a synthetic product or a commercially available product may be used. Moreover, the silica which fixed the organic acid to the surface may be used individually, and may be used in mixture of 2 or more types.
  • the method for introducing these organic acids onto the silica surface is not particularly limited. In addition to the method of introducing them into the silica surface in the state of mercapto groups or alkyl groups, and then oxidizing them into sulfonic acids or carboxylic acids, the above organic acids are used. There is a method in which a protective group is introduced into the surface of a silica in a state where the protective group is bonded to an acidic group derived from an acid, and then the protective group is eliminated.
  • the compound used when introducing the organic acid to the silica surface has at least one functional group that can be an organic acid group, and further, a functional group used for bonding with a hydroxyl group on the silica surface, hydrophobic It preferably contains a functional group introduced to control hydrophilicity, a functional group introduced to control steric bulk, and the like.
  • silica As a specific method for synthesizing silica with an organic acid immobilized on the surface, if sulfonic acid, a kind of organic acid, is immobilized on the silica surface, for example, “Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups” , ⁇ Chem. Commun. 246-247 (2003). Specifically, a silane coupling agent having a thiol group such as 3-mercaptopropyltrimethoxysilane is coupled to silica, and then the thiol group is oxidized with hydrogen peroxide, whereby the sulfonic acid is immobilized on the surface. Silica can be obtained.
  • silica having a carboxylic acid immobilized on the surface can be obtained by coupling a silane coupling agent containing a photoreactive 2-nitrobenzyl ester to silica, followed by light irradiation.
  • the average primary particle diameter of silica having an organic acid fixed on the surface in the polishing composition is preferably 5 nm or more, more preferably 7 nm or more, and further preferably 10 nm or more.
  • the average primary particle diameter of the silica having the organic acid in the polishing composition fixed on the surface is also preferably 50 nm or less, more preferably 45 nm or less, and even more preferably 40 nm or less.
  • the average primary particle diameter of silica having an organic acid fixed on the surface decreases, there is an advantage that it is possible to suppress the occurrence of scratches on the surface of the object to be polished after polishing with the polishing composition.
  • the value of the average primary particle diameter of the silica which fixed the organic acid on the surface is calculated based on the specific surface area of the silica which fixed the organic acid on the surface measured by BET method, for example.
  • the average secondary particle diameter of silica having the organic acid in the polishing composition fixed on the surface is preferably 10 nm or more, more preferably 15 nm or more, and further preferably 20 nm or more.
  • the average secondary particle diameter of the silica having the organic acid in the polishing composition fixed on the surface is also preferably 100 nm or less, more preferably 90 nm or less, and still more preferably 80 nm or less.
  • the average secondary particle diameter of the silica having the organic acid fixed on the surface becomes smaller, there is an advantage that it is possible to suppress the generation of scratches on the surface of the object to be polished after polishing with the polishing composition.
  • the value of the average secondary particle diameter of silica is calculated based on, for example, the specific surface area of silica measured by a light scattering method using laser light.
  • the content of silica having an organic acid fixed on the surface in the polishing composition is preferably 0.0005% by mass or more, more preferably 0.001% by mass or more, and further preferably 0.005% by mass or more. is there.
  • polishing rate of the object to be polished by the polishing composition increases as the content of silica having the organic acid fixed on the surface increases.
  • the content of silica having an organic acid fixed on the surface in the polishing composition is also preferably 10% by mass or less, more preferably 5% by mass or less, and further preferably 1% by mass or less.
  • the friction with the material to be polished decreases.
  • SiN silicon nitride
  • polishing target such as polycrystalline silicon or TEOS
  • silica having an organic acid fixed on the surface it is essential to use “silica having an organic acid fixed on the surface” as abrasive grains, but in some cases, silica having no organic acid fixed to the surface may be used in combination.
  • the content ratio of “silica having an organic acid fixed on the surface” in the entire abrasive grains is preferably 50% by mass or more, more preferably 80% by mass or more, and 90% by mass or more based on mass. Is more preferably 95% by mass or more, and most preferably 100% by mass.
  • the “polyoxyalkylene group-containing compound” contained in the polishing composition of the present invention is an organic compound containing a polyoxyalkylene group.
  • the “polyoxyalkylene group-containing compound” may be a compound in which a part of the functional group of the compound having a polyoxyalkylene group is substituted or polymerized. These may be used alone or in combination of two or more.
  • polyoxyalkylene group examples include a polyoxyethylene group, a polyoxypropylene group, a polyoxyalkylene group in which an oxyethylene group and an oxypropylene group are blocked or randomly bonded, the polyoxyethylene group, the polyoxypropylene group, Examples of the polyoxyalkylene group further include a group in which an oxyoxybutylene group is contained in a block or random bond.
  • Specific examples of the compound in which the terminal of the polyoxyalkylene group is a hydroxyl group include various addition amounts of polyalkylene glycol derivatives such as polyethylene glycol, polypropylene glycol, and polybutylene glycol, Pronon (registered trademark) 102, and Pronon (registered trademark) 201.
  • Block polymer represented by Pronon (registered trademark) series such as NOF Corporation, UNIOR (registered trademark) DA-400, UNIOR (registered trademark) DB-400, UNIOR (registered trademark) DB-530 Bisphenol A derivatives such as (manufactured by NOF Corporation) are listed.
  • Specific examples of the compound in which the terminal of the polyoxyalkylene group is an ether group include various polyalkylene glycol alkyl ethers such as polyethylene glycol oleyl ether and polyethylene glycol dimethyl ether.
  • Specific examples of the compound in which the terminal of the polyoxyalkylene group is an ester group include polyalkylene glycol alkyl esters such as polyethylene glycol monooctyl ester, polypropylene glycol monostearyl ester, and polypropylene glycol distearyl ester.
  • the compound in which the terminal of the polyoxyalkylene group is an allyl group include UNIOX (registered trademark) PKA-5006, UNIOR (registered trademark) PKA-5014, UNIOR (registered trademark) PKA-5017 (above, NOF Corporation). And other polyalkylene glycol allyl ethers (manufactured by Co., Ltd.).
  • Specific examples of the compound in which the end of the polyoxyalkylene group is a (meth) acrylic group include: BLEMMER (registered trademark) PP series, BLEMMER (registered trademark) PME series, BLEMMER (registered trademark) PDE series (above, NOF Corporation) And polyalkylene glycol (meth) acrylates (manufactured by company).
  • the polyoxyalkylene group-containing compound is preferably one or more selected from the group consisting of polyethylene glycol, polypropylene glycol and polybutylene glycol, and more preferably polyethylene glycol.
  • the molecular weight distribution of the weight average molecular weight (in terms of polyethylene glycol) by gel permeation chromatography (GPC) of the polyoxyalkylene group-containing compound described above has two or more peaks.
  • “having two or more peaks” means that the GPC molecular weight distribution chart of the polyoxyalkylene group-containing compound has two or more maximum values.
  • a composition satisfying the condition of “having two or more peaks” as described above can be obtained.
  • the weight average molecular weight of each peak corresponding to the two or more peaks are preferably 1.1 times or more different from each other, more preferably 1.3 times or more, and still more preferably 1.5 times or more.
  • the weight average molecular weight of the peak having the smaller weight average molecular weight is preferably 100 to 2000, more preferably 100 to 1000.
  • the weight average molecular weight of the peak having the larger weight average molecular weight is preferably 300 to 1,000,000, more preferably 300 to 100,000.
  • the weight average molecular weight of the peak having the smaller weight average molecular weight out of any two peak molecular weights selected from the three or more peaks is preferably It is 100 to 2000, more preferably 100 to 1000.
  • the weight average molecular weight of the peak having the larger weight average molecular weight is preferably 300 to 1,000,000, more preferably 300 to 100,000. is there.
  • the weight average molecular weight of the polyoxyalkylene group-containing compound can be specifically measured by the method described in Examples.
  • the lower limit of the content of the polyoxyalkylene group-containing compound in the polishing composition is preferably 0.0001% by mass or more, more preferably 0.0005% by mass or more, and 0.001% by mass or more. More preferably.
  • the upper limit of the content of the polyoxyalkylene group-containing compound in the polishing composition is preferably 30% by mass or less, more preferably 25% by mass or less, and 20% by mass or less. Further preferred. If it is such a range, it will become possible to fully exhibit the effect of this invention.
  • the polishing composition of the present invention may contain an additive.
  • the additive has at least one of a function of improving the polishing rate of the object to be polished and a function of adjusting the pH of the polishing composition of the present invention.
  • additives include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, enanthic acid, caprylic acid, pelargonic acid, capric acid, lauric acid, myristic acid, palmitic acid, margaric acid, stearin Acid, oleic acid, linoleic acid, linolenic acid, arachidonic acid, docosahexaenoic acid, eicosapentaenoic acid, lactic acid, malic acid, citric acid, benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, salicylic acid, gallic acid, melicic acid, silicic acid Cinnamic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, fumaric acid, maleic acid, aconitic acid, amino acid, anthranilic acid, nitrocarboxylic acid
  • citric acid citric acid, phosphoric acid, iminodiacetic acid, anthranilic acid, and potassium hydroxide are preferable.
  • the amount of the additive having a function of adjusting pH may be appropriately selected so as to be the pH of the polishing composition described below.
  • the effect of improving the polishing rate of the object to be polished can be exhibited even with such an added amount.
  • the addition amount is preferably 0.001% by mass or more, and more preferably 0.01% by mass or more. Moreover, when using the additive which has only the function which improves the grinding
  • the polishing composition of the present invention has a pH value of 7 or less. If the pH value is larger than 7, the surface of the object to be polished has a smaller positive charge. Therefore, the abrasive object having a negatively charged surface (silica having an organic acid fixed on the surface) is used to increase the object to be polished. It becomes difficult to polish at a speed. From the viewpoint of polishing an object to be polished with the polishing composition at a sufficient polishing rate, the pH value of the polishing composition is preferably 5 or less, more preferably 4 or less, and particularly preferably 3 or less.
  • the pH value of the polishing composition is also preferably 1 or more from the viewpoint of safety, and more preferably 1.5 or more.
  • the polishing composition of the present invention preferably contains water as a dispersion medium or a solvent. From the viewpoint of preventing the influence of impurities on the other components of the polishing composition, it is preferable to use water with a purity as high as possible. Specifically, pure water, ultrapure water, or distilled water from which foreign ions are removed through a filter after removing impurity ions with an ion exchange resin is preferable. Further, as a dispersion medium or a solvent, an organic solvent or the like may further be included for the purpose of controlling the dispersibility of other components of the polishing composition.
  • the polishing composition of the present invention further contains other components such as a complexing agent, a metal anticorrosive, an antiseptic, an antifungal agent, an oxidizing agent, a reducing agent, a surfactant, and a water-soluble polymer as necessary. May be included.
  • a complexing agent such as a metal anticorrosive, an antiseptic, an antifungal agent, an oxidizing agent, a reducing agent, a surfactant, and a water-soluble polymer as necessary. May be included.
  • a complexing agent such as a complexing agent, a metal anticorrosive, an antiseptic, an antifungal agent, an oxidizing agent, a reducing agent, a surfactant, and a water-soluble polymer as necessary. May be included.
  • the oxidizing agent, preservative, fungicide, and water-soluble polymer will be described.
  • the oxidizing agent that can be added to the polishing composition has an action of oxidizing the surface of the polishing object, and improves the polishing rate of the polishing object by the polishing composition.
  • oxidizing agents are hydrogen peroxide, sodium peroxide, barium peroxide, organic oxidizing agent, ozone water, silver (II) salt, iron (III) salt, permanganic acid, chromic acid, dichromic acid, peroxo Disulfuric acid, peroxophosphoric acid, peroxosulfuric acid, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypobromite, hypoiodous acid, chloric acid, chlorous acid, Examples include perchloric acid, bromic acid, iodic acid, periodic acid, persulfuric acid, dichloroisocyanuric acid, and salts thereof. These oxidizing agents may be used alone or in combination of two or more. Among these, hydrogen peroxide, ammonium persulfate, periodic acid, hypochlorous acid, and sodium dichloroisocyanurate are preferable.
  • the content of the oxidizing agent in the polishing composition is preferably 0.1 g / L or more, more preferably 1 g / L or more, and further preferably 3 g / L or more. As the content of the oxidizing agent increases, the polishing rate of the object to be polished by the polishing composition is further improved.
  • the content of the oxidizing agent in the polishing composition is also preferably 200 g / L or less, more preferably 100 g / L or less, and further preferably 40 g / L or less.
  • the content of the oxidizing agent decreases, the material cost of the polishing composition can be reduced, and the load on the processing of the polishing composition after polishing, that is, the waste liquid treatment can be reduced.
  • the possibility of excessive oxidation of the surface of the object to be polished by the oxidizing agent can be reduced.
  • Preservatives and fungicides examples of the antiseptic and fungicide that can be added to the polishing composition according to the present invention include 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one. And the like, isothiazoline-based preservatives such as paraoxybenzoates, and phenoxyethanol. These antiseptics and fungicides may be used alone or in combination of two or more.
  • a water-soluble polymer may be added to the polishing composition according to the present invention for the purpose of improving the hydrophilicity of the surface of the polishing object and improving the dispersion stability of the abrasive grains.
  • water-soluble polymers include hydroxymethylcellulose, hydroxyethylcellulose (HEC), hydroxypropylcellulose, hydroxyethylmethylcellulose, hydroxypropylmethylcellulose, methylcellulose, ethylcellulose, ethylhydroxyethylcellulose, carboxymethylcellulose, and other cellulose derivatives; poly (N-acylalkyleneimines) ) And the like; polyvinyl alcohol; modified (cation modified or nonionic modified) polyvinyl alcohol; polyvinyl pyrrolidone; polyvinyl caprolactam; polyoxyalkylene such as polyoxyethylene; and copolymers containing these structural units . These water-soluble polymers may be used alone or in combination of two or more.
  • the method for producing the polishing composition of the present invention is not particularly limited, and for example, silica having an organic acid fixed on the surface and a molecular weight distribution of weight average molecular weight (in terms of polyethylene glycol) by gel permeation chromatography (GPC).
  • GPC gel permeation chromatography
  • a method including a step of mixing a polyoxyalkylene group-containing compound having two or more peaks and a step of adjusting the pH to 7 or less may be employed. At this time, water and other components as required may be further stirred and mixed. Details of each component to be added are as described above.
  • the said additive can be a “step of adjusting the pH to 7 or less” in the production method.
  • the temperature at the time of mixing each component is not particularly limited, but is preferably 10 to 40 ° C., and may be heated to increase the dissolution rate.
  • the polishing object of the present invention is not particularly limited, and examples thereof include a material including a polishing object such as a nitride such as silicon nitride, an alloy such as aluminum-magnesium and silicon-germanium, or a composite material thereof.
  • a polishing object containing a silicon-containing material include single silicon and silicon compounds.
  • the single silicon include single crystal silicon, polycrystalline silicon (polysilicon, Poly-Si), and amorphous silicon.
  • Examples of the silicon compound include silicon nitride, silicon oxide, silicon carbide, and SiGe.
  • the silicon compound film includes a low dielectric constant film having a relative dielectric constant of 3 or less. Note that it is particularly preferable that the object to be polished contains polycrystalline silicon.
  • the polishing object may include a metal.
  • the metal is not particularly limited, and examples thereof include tungsten, copper, aluminum, hafnium, cobalt, nickel, titanium, tantalum, titanium, cobalt, gold, silver, platinum, palladium, rhodium, ruthenium, iridium, osmium, and germanium. Can be mentioned. These metals may be contained in the form of an alloy or a metal compound. When the polishing object contains a metal, copper is preferable. These polishing objects may be used alone or in combination of two or more. Note that the object to be polished may have a single layer structure or two or more types of multilayer structures. In the case of a multilayer structure, each layer may contain the same material or different materials.
  • the polishing object in the present invention may have the above-mentioned polishing object and a layer containing a material different from the polishing object.
  • a material different from the polishing object examples include polycrystalline silicon, single crystal silicon, tetraethyl orthosilicate (TEOS), and the like. It is done. These materials may be used alone or in combination of two or more.
  • polishing method using polishing composition the grinding
  • polishing method is provided.
  • polishing an object to be polished using the polishing composition of the present invention can be performed using an apparatus and conditions used for normal polishing.
  • General polishing apparatuses include a single-side polishing apparatus and a double-side polishing apparatus.
  • a single-side polishing machine hold the substrate using a holder called a carrier, and supply the polishing composition from above while pressing the surface plate with the polishing pad affixed to the opposite surface of the substrate to rotate the surface plate To polish one side of the material to be polished.
  • the polishing is performed by a physical action caused by friction between the polishing pad and the polishing composition and the object to be polished, and a chemical action that the polishing composition brings to the object to be polished.
  • the polishing pad a porous material such as a nonwoven fabric, polyurethane, or suede can be used without particular limitation.
  • the polishing pad is preferably processed so that the polishing liquid is accumulated.
  • the polishing conditions in the polishing method according to the present invention include polishing load, platen rotation number, carrier rotation number, flow rate of the polishing composition, and polishing time. These polishing conditions are not particularly limited.
  • the polishing load is preferably 0.1 psi to 10 psi per unit area of the substrate, more preferably 0.5 psi to 8.0 psi, Preferably, it is 1.0 psi or more and 6.0 psi or less.
  • the higher the load the higher the frictional force caused by the abrasive grains, and the higher the mechanical working force, the higher the polishing rate.
  • the platen rotation speed and the carrier rotation speed are preferably 10 to 500 rpm.
  • the supply amount of the polishing composition may be any supply amount that covers the entire substrate of the material to be polished, and may be adjusted according to conditions such as the size of the substrate.
  • the polishing composition of the present invention may be a one-component type or a multi-component type including a two-component type. Further, the polishing composition of the present invention may be prepared by diluting the stock solution of the polishing composition, for example, 10 times or more using a diluent such as water.
  • Examples 1 to 13, Comparative Examples 1 to 7 To water as a solvent, abrasive grains (colloidal silica shown in Table 1) and a polyoxyalkylene group-containing compound are added at concentrations shown in Table 1, and compounds shown in Table 1 are added as additives at concentrations shown in Table 1. The mixture was stirred and mixed to obtain a polishing composition (mixing temperature: about 25 ° C., mixing time: about 10 minutes). In addition, pH of polishing composition was adjusted with the additive 1 shown in Table 1, and was confirmed with the pH meter.
  • polishing conditions and objects to be polished are as follows.
  • Polishing machine CMP single-side polishing machine for 200 mm wafers
  • Pad Polyurethane pad Pressure: 3 psi (about 20.7 kPa)
  • Plate rotation speed 90rpm
  • Flow rate of polishing composition 130 ml / min
  • Polishing time 1 minute
  • Polishing target 200 mm wafer
  • Poly-Si, SiN, TEOS Poly-Si: manufactured by low pressure chemical vapor deposition (LPCVD) Thickness 5000 mm SiN: manufactured by low pressure chemical vapor deposition (LPCVD)
  • TEOS manufactured by physical vapor deposition (PVD) Thickness 10,000 mm
  • the polishing rate was evaluated by obtaining the film thickness before and after polishing with an optical interference film thickness measuring apparatus and dividing the difference by the polishing time.
  • an 8-inch Poly-Si pattern wafer having the following configuration is polished, and the step with the Poly-Si layer in the portion where the line and space is 0.25 ⁇ m / 0.25 ⁇ m Force microscope).
  • the measurement conditions of the weight average molecular weight of the polyoxyalkylene group-containing compound are as follows.
  • GPC device manufactured by Shimadzu Corporation Model: Prominence + ELSD detector (ELSD-LTII) Column: VP-ODS (manufactured by Shimadzu Corporation) Mobile phase A: MeOH B: 1% aqueous solution of acetic acid Flow rate: 1 ml / min Detector: ELSD temp. 40 ° C., Gain 8, N 2 GAS 350 kPa Oven temperature: 40 ° C Injection volume: 40 ⁇ l.
  • nitriding is performed in comparison with polycrystalline silicon (Poly-Si) and tetraethoxysilane (TEOS) by using the polishing compositions of Examples 1 to 13 according to the present invention. It can be seen that silicon (SiN) can be polished with high selectivity. Moreover, it turns out that generation
  • a polishing composition to which no organic compound was added (Comparative Example 1)
  • a polishing composition to which an organic compound other than the polyoxyalkylene group-containing compound was added (Comparative Examples 2 and 3)
  • a polyoxyalkylene group-containing compound In the polishing composition (Comparative Examples 4 to 6) to which only one kind is added, a highly selective polishing rate ratio cannot be obtained, and the occurrence of a step cannot be sufficiently suppressed.
  • the polishing composition of Comparative Example 7 having a pH of more than 7 the polishing rate of SiN as the object to be polished decreased and the polishing rate of Poly-Si became too high, so that the level difference could not be evaluated. .

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention concerne une composition de polissage capable de limiter de manière adéquate le phénomène de bosselage dans des étapes de polissage et, de façon plus fiable, d'éliminer des différences de niveau. La présente invention concerne une composition de polissage : qui contient de la silice sur la surface de laquelle un acide organique a été fixé, ainsi qu'un composé contenant un groupe polyoxyalkylène ; pour laquelle la répartition de masse molaire de la masse molaire moyenne en masse (calculée en tant que polyéthylène glycol) du composé contenant le groupe polyoxyalkylène, par chromatographie par perméation de gel (GPC), présente au poins deux pics ; et pour laquelle le pH n'est pas supérieur à 7.
PCT/JP2015/076810 2014-09-30 2015-09-18 Composition de polissage et procédé de polissage à l'aide de celle-ci Ceased WO2016052281A1 (fr)

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KR1020177006608A KR102444499B1 (ko) 2014-09-30 2015-09-18 연마용 조성물 및 그것을 사용한 연마 방법
CN201580053307.0A CN107075346B (zh) 2014-09-30 2015-09-18 研磨用组合物及使用其的研磨方法

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JP2014-200423 2014-09-30
JP2014200423 2014-09-30
JP2015059669A JP6517555B2 (ja) 2014-09-30 2015-03-23 研磨用組成物およびそれを用いた研磨方法
JP2015-059669 2015-03-23

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JP2021188020A (ja) * 2020-06-05 2021-12-13 株式会社フジミインコーポレーテッド アニオン変性コロイダルシリカの製造方法
TWI760252B (zh) * 2020-06-30 2022-04-01 日商Ｊｓｒ股份有限公司 研磨粒的製造方法、化學機械研磨用組成物及化學機械研磨方法

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JP2006516067A (ja) * 2002-11-13 2006-06-15 デュポン エアー プロダクツ ナノマテリアルズ エルエルシー 研磨剤組成物とそれによる研磨方法
JP2012040671A (ja) * 2010-08-23 2012-03-01 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2006516067A (ja) * 2002-11-13 2006-06-15 デュポン エアー プロダクツ ナノマテリアルズ エルエルシー 研磨剤組成物とそれによる研磨方法
JP2012040671A (ja) * 2010-08-23 2012-03-01 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021188020A (ja) * 2020-06-05 2021-12-13 株式会社フジミインコーポレーテッド アニオン変性コロイダルシリカの製造方法
JP7594864B2 (ja) 2020-06-05 2024-12-05 株式会社フジミインコーポレーテッド アニオン変性コロイダルシリカの製造方法
TWI760252B (zh) * 2020-06-30 2022-04-01 日商Ｊｓｒ股份有限公司 研磨粒的製造方法、化學機械研磨用組成物及化學機械研磨方法

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