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WO2013118869A1 - Dispositif de refroidissement de semiconducteurs - Google Patents

Dispositif de refroidissement de semiconducteurs Download PDF

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Publication number
WO2013118869A1
WO2013118869A1 PCT/JP2013/053061 JP2013053061W WO2013118869A1 WO 2013118869 A1 WO2013118869 A1 WO 2013118869A1 JP 2013053061 W JP2013053061 W JP 2013053061W WO 2013118869 A1 WO2013118869 A1 WO 2013118869A1
Authority
WO
WIPO (PCT)
Prior art keywords
refrigerant passage
fins
refrigerant
cooling device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/053061
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English (en)
Japanese (ja)
Inventor
潤一 井上
修二 足立
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Publication of WO2013118869A1 publication Critical patent/WO2013118869A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a semiconductor cooling device for cooling a plurality of semiconductor elements.
  • cooling fins attached to the semiconductor elements are cooled by a refrigerant so that the operating semiconductor elements do not exceed an allowable temperature.
  • the cooling fin protrudes in alignment with the refrigerant passage through which the refrigerant flows. The heat generated by the semiconductor element is transmitted to the fins and removed by heat exchange between the fins and the refrigerant flowing around. In this way, the semiconductor element is cooled.
  • the temperature of the refrigerant flowing through the refrigerant passage rises due to heat exchange with the fins.
  • the amount of heat removed from each fin becomes smaller as it goes downstream of the refrigerant passage.
  • the semiconductor element located in the upstream portion of the refrigerant passage reduces the temperature by 20 degrees by heat exchange with the refrigerant, whereas the semiconductor element located in the downstream portion of the refrigerant passage is caused by heat exchange with the refrigerant.
  • the phenomenon of reducing the temperature only by 10 degrees appears. In other words, the cooling capacity of the fin becomes lower in the downstream portion of the refrigerant passage. For this reason, the cooling efficiency of the semiconductor element in which the fin is located downstream of the refrigerant passage is deteriorated.
  • JP4600052B issued by the Japan Patent Office in order to eliminate such variations in the cooling of the semiconductor elements due to the position of the fins in the refrigerant passage, so that all the semiconductor elements can exchange heat with the refrigerant at the same temperature. It has been proposed to form a refrigerant passage in a manifold shape.
  • An object of the present invention is to uniformly cool a plurality of semiconductor elements under a simpler configuration.
  • a semiconductor cooling device includes a refrigerant passage through which a refrigerant flows, a plurality of semiconductor elements disposed outside the refrigerant passage, and a refrigerant passage for transferring heat of the semiconductor elements to the refrigerant. And a mechanism for circulating the refrigerant in the refrigerant passage. Furthermore, the arrangement density or surface area of the plurality of fins is increased from the upstream side to the downstream side of the refrigerant passage.
  • FIG. 1 is a longitudinal sectional view of a semiconductor cooling device according to a first embodiment of the present invention.
  • FIG. 2 is a schematic exploded perspective view of the semiconductor cooling device.
  • FIG. 3A and 3B are a plan view and a longitudinal sectional view of a fin provided in the semiconductor cooling device.
  • FIG. 4A and 4B are a plan view and a longitudinal sectional view of a fin according to the second embodiment of the present invention.
  • FIG. 5A and 5B are shown in FIGS. Fig. 4 shows a third embodiment of the invention similar to 4A and 4B.
  • a semiconductor cooling device 1 according to a first embodiment of the present invention includes a water jacket 3 having a coolant passage 2 formed therein.
  • a plurality of semiconductor elements 5 are arranged outside the water jacket 3.
  • a large number of fins 6 are coupled to each semiconductor element 5 via the substrate 4.
  • the substrate 4 constitutes a part of the wall surface of the water jacket 3.
  • an inlet 2A and an outlet 2B of the refrigerant passage 2 are formed.
  • a cooling water circulation device 8 including a cooling water pump and a cooling water tank for temporarily storing cooling water is connected to the inlet 2A and the outlet 2B.
  • the fins 6 that protrude into the refrigerant passage 2 are formed in a columnar shape with a constant diameter, and are arranged in the refrigerant passage 2 with a constant density.
  • the projecting length of the fin 6 to the refrigerant passage 2 is set so as to be shorter toward the upstream of the refrigerant passage 2 and to be longer as it goes downstream of the refrigerant passage 2.
  • the refrigerant passage 2 is formed so as to maintain a uniform cross section, in other words, a constant width and depth.
  • the refrigerant flowing through the refrigerant passage 2 flows down while exchanging heat with the fins 6.
  • the temperature of the refrigerant rises due to heat exchange with the fins 6. Therefore, the temperature of the refrigerant increases as going downstream. As the refrigerant temperature increases, heat exchange between the refrigerant and the fins 6 is less likely to occur.
  • the amount of heat removal depends on the surface area of the fins 6. The larger the surface area of the fin 6, the larger the amount of heat removal, and the heat exchange between the refrigerant and the fin 6 is promoted.
  • the semiconductor cooling device 1 a decrease in the amount of heat removed from the fins 6 due to a rise in the refrigerant temperature is compensated by an increase in the length of the fins 6. As a result, the amount of heat removed from each fin 6 is averaged. Therefore, the semiconductor element 5 can be cooled under the same conditions upstream and downstream of the refrigerant passage 2, and all the semiconductor elements 5 can be uniformly cooled.
  • the present invention can be easily implemented only by changing the length of the fins 6. Furthermore, since the refrigerant passage 2 itself is formed in a uniform cross section and does not require any special arrangement, the present invention can be applied to a water jacket 3 similar to a conventional semiconductor cooling device.
  • FIG. 1 A second embodiment of the present invention will be described with reference to 4A and 4B.
  • the configuration of the water jacket 3 is the same as that of the first embodiment.
  • the arrangement density of the fins 6 is constant as in the first embodiment.
  • the difference from the first embodiment is that the fins 6 have a uniform length, while their cross-sectional area is changed according to the position in the refrigerant passage 2.
  • the fins 6 are formed in a cylindrical shape, and the diameter of the fins 6 is set so that the diameter of the fins 6 is small upstream of the refrigerant passage 2 and the diameter of the fins 6 increases toward the downstream of the refrigerant passage 2.
  • the surface area of the fins 6 increases as the temperature decreases downstream of the refrigerant passage 2, and the amount of heat removed from the fins 6 of the refrigerant also increases. It is possible to compensate for the phenomenon that the refrigerant temperature rises and the heat removal amount decreases as it goes downstream of the refrigerant passage 2, and the heat removal amount from each fin 6 can be averaged. Therefore, also in this embodiment, the semiconductor element 5 can be cooled under the same conditions upstream and downstream of the refrigerant passage 2, and all the semiconductor elements 5 can be uniformly cooled.
  • the present invention can be easily implemented only by changing the diameter of the fin 6. Further, like the first embodiment, the refrigerant passage 2 itself does not require any special arrangement. Furthermore, the present invention can also be applied to a water jacket 3 similar to a conventional semiconductor cooling device.
  • the fins 6 are cylindrical, but the cross-sectional shape of the fins 6 may be any shape. In short, the cross sectional dimension of the fin 6 may be changed so that the cross sectional area of the fin 6 increases as it goes downstream of the refrigerant passage 2.
  • FIG. 1 A third embodiment of the present invention will be described with reference to 5A and 5B.
  • the configuration of the water jacket 3 is the same as that of the first embodiment.
  • the thickness of the fin 6 is uniform as in the first embodiment.
  • the difference from the first embodiment is that the fins 6 have a uniform length, while the arrangement density is changed according to the position in the refrigerant passage 2. That is, the arrangement density of the fins 6 is sparse upstream of the refrigerant passage 2, and the arrangement of the fins 6 is made closer to the downstream of the refrigerant passage 2.
  • the number of fins 6 increases and the amount of heat removal per unit area increases as it goes downstream of the refrigerant passage 2.
  • the phenomenon in which the amount of heat removed from the fins 6 decreases as the refrigerant temperature rises and goes downstream of the refrigerant passage 2 can be compensated thereby, and the amount of heat removed from each semiconductor element 5 can be averaged. Therefore, also in this embodiment, the semiconductor element 5 can be efficiently cooled without causing variations in position.
  • the refrigerant passage 2 itself does not require any special arrangement.
  • the present invention can be easily implemented only by changing the arrangement density of the fins 6.
  • the present invention can also be applied to a water jacket 3 similar to a conventional semiconductor cooling device.
  • the present invention increases the arrangement density or surface area of the plurality of fins 6 protruding into the refrigerant passage 2 from the upstream side to the downstream side of the refrigerant passage 2. Therefore, the heat removal amount per unit area of the refrigerant passage 2 increases toward the downstream side of the refrigerant passage 2. As a result, the temperature of the refrigerant rises as it goes downstream of the refrigerant passage 2 to compensate for the phenomenon that the amount of heat removed from the fins 6 decreases, and all the semiconductor elements 5 are uniformly cooled under equal cooling conditions. be able to.
  • the refrigerant passage 2 is formed in a uniform cross section for convenience of explanation.
  • the cross-sectional area of the refrigerant passage 2 is sufficiently large and the influence of changes in the diameter, length, and density of the fins 6 on the change in the flow velocity of the refrigerant is small, the refrigerant passage 2 is formed in a uniform cross section in this way. Even so, uniform cooling of all the semiconductor elements 5 can be realized.
  • the cross-section of the refrigerant passage 2 should be designed so that the refrigerant flow rate is constant. Is also preferable. While making the cross section of the refrigerant passage 2 uniform, the change in the diameter, length, and density of the fins 6 and the influence of the resulting change in the flow velocity of the refrigerant on the heat removal amount are obtained by calculation or simulation. In consideration of the above, it is also preferable to determine the specifications of the fin 6 so that the final cooling efficiency is constant in order to achieve uniform cooling of the semiconductor element 5.
  • the semiconductor cooling device according to the present invention can uniformly cool a plurality of semiconductor elements with a simple configuration. Therefore, a favorable effect can be expected as a semiconductor cooling device for mounting on a vehicle with a limited installation space and severe temperature change.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un dispositif de refroidissement de semiconducteurs, comprenant un passage d'agent de refroidissement au travers duquel s'écoule un agent de refroidissement, de multiples éléments semiconducteurs disposés en dehors du passage d'agent de refroidissement, de multiples ailettes faisant saillie à l'intérieur du passage d'agent de refroidissement de façon à transmettre à l'agent de refroidissement de la chaleur des éléments semiconducteurs, et un mécanisme de mise en circulation de l'agent de refroidissement dans le passage d'agent de refroidissement. Dans cette configuration, la densité d'implantation ou l'aire de surface des ailettes augmente de l'amont vers l'aval dans le passage d'agent de refroidissement. De cette manière, la réduction de la chaleur absorbée à partir des ailettes causée par l'élévation en température de l'agent de refroidissement est compensée, et il est possible de refroidir uniformément les éléments semiconducteurs.
PCT/JP2013/053061 2012-02-09 2013-02-08 Dispositif de refroidissement de semiconducteurs Ceased WO2013118869A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012026017A JP2013165097A (ja) 2012-02-09 2012-02-09 半導体冷却装置
JP2012-026017 2012-02-09

Publications (1)

Publication Number Publication Date
WO2013118869A1 true WO2013118869A1 (fr) 2013-08-15

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WO (1) WO2013118869A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018116653A1 (fr) * 2016-12-20 2018-06-28 富士電機株式会社 Module semi-conducteur
EP3306659A4 (fr) * 2015-06-03 2019-06-19 Mitsubishi Electric Corporation Refroidisseur à refroidissement par liquide, et procédé de fabrication d'ailette de radiateur dans un refroidisseur à refroidissement par liquide
US20190393133A1 (en) * 2017-03-16 2019-12-26 Mitsubishi Electric Corporation Cooling system
CN110864578A (zh) * 2019-12-02 2020-03-06 西安热工研究院有限公司 一种用于超临界二氧化碳pche的变截面机翼型高效换热通道
WO2020224856A1 (fr) * 2019-05-03 2020-11-12 Siemens Aktiengesellschaft Refroidissement de sources de chaleur disposées en série dans un flux de fluide de refroidissement
WO2021249680A1 (fr) * 2020-06-08 2021-12-16 Magna powertrain gmbh & co kg Module d'énergie électrique
CN115831893A (zh) * 2022-12-06 2023-03-21 扬州国扬电子有限公司 一种高效散热电力电子模块散热装置
US11965702B1 (en) * 2022-10-21 2024-04-23 Amulaire Thermal Technology, Inc. Low pressure drop automotive liquid-cooling heat dissipation plate and enclosed automotive liquid-cooling cooler having the same
US20240328726A1 (en) * 2023-03-31 2024-10-03 Champ Tech Optical (Foshan) Corporation Cooling panel and cooling device
DE102023210040A1 (de) * 2023-10-13 2025-04-17 Vitesco Technologies Germany Gmbh Leistungselektronik-Kühler zur Kühlung einer Leistungselektronikvorrichtung, Leistungselektronikvorrichtung und Inverter

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016039202A (ja) * 2014-08-06 2016-03-22 スズキ株式会社 インバータ装置
JP6651828B2 (ja) * 2015-12-11 2020-02-19 富士電機株式会社 冷却器及びパワー半導体モジュール
JP7675582B2 (ja) * 2021-07-12 2025-05-13 ニデック株式会社 放熱部材
KR102712734B1 (ko) * 2022-05-19 2024-10-04 동양피스톤 주식회사 파워 모듈 냉각 장치
TWI811045B (zh) * 2022-07-29 2023-08-01 艾姆勒科技股份有限公司 具有不等表面積鰭片組的車用水冷散熱板、以及具有其的封閉式車用水冷散熱器
WO2024241581A1 (fr) * 2023-05-25 2024-11-28 日立Astemo株式会社 Refroidisseur et dispositif semi-conducteur

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JPS63138799A (ja) * 1986-11-28 1988-06-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 回路モジュールの浸漬冷却装置
JP2003324173A (ja) * 2002-05-02 2003-11-14 Nissan Motor Co Ltd 半導体素子の冷却装置
JP2010153785A (ja) * 2008-11-28 2010-07-08 Fuji Electric Systems Co Ltd 半導体冷却装置
JP2012069892A (ja) * 2010-09-27 2012-04-05 Denso Corp 半導体冷却器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63138799A (ja) * 1986-11-28 1988-06-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 回路モジュールの浸漬冷却装置
JP2003324173A (ja) * 2002-05-02 2003-11-14 Nissan Motor Co Ltd 半導体素子の冷却装置
JP2010153785A (ja) * 2008-11-28 2010-07-08 Fuji Electric Systems Co Ltd 半導体冷却装置
JP2012069892A (ja) * 2010-09-27 2012-04-05 Denso Corp 半導体冷却器

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3306659A4 (fr) * 2015-06-03 2019-06-19 Mitsubishi Electric Corporation Refroidisseur à refroidissement par liquide, et procédé de fabrication d'ailette de radiateur dans un refroidisseur à refroidissement par liquide
US11003227B2 (en) 2015-06-03 2021-05-11 Mitsubishi Electric Corporation Liquid-type cooling apparatus and manufacturing method for heat radiation fin in liquid-type cooling apparatus
CN109219880B (zh) * 2016-12-20 2022-06-14 富士电机株式会社 半导体模块
JPWO2018116653A1 (ja) * 2016-12-20 2019-04-04 富士電機株式会社 半導体モジュール
EP3454367A4 (fr) * 2016-12-20 2019-07-17 Fuji Electric Co., Ltd. Module semi-conducteur
WO2018116653A1 (fr) * 2016-12-20 2018-06-28 富士電機株式会社 Module semi-conducteur
CN109219880A (zh) * 2016-12-20 2019-01-15 富士电机株式会社 半导体模块
US10756001B2 (en) 2016-12-20 2020-08-25 Fuji Electric Co., Ltd. Semiconductor module
US10847441B2 (en) * 2017-03-16 2020-11-24 Mitsubishi Electric Corporation Cooling system
US20190393133A1 (en) * 2017-03-16 2019-12-26 Mitsubishi Electric Corporation Cooling system
WO2020224856A1 (fr) * 2019-05-03 2020-11-12 Siemens Aktiengesellschaft Refroidissement de sources de chaleur disposées en série dans un flux de fluide de refroidissement
CN110864578A (zh) * 2019-12-02 2020-03-06 西安热工研究院有限公司 一种用于超临界二氧化碳pche的变截面机翼型高效换热通道
WO2021249680A1 (fr) * 2020-06-08 2021-12-16 Magna powertrain gmbh & co kg Module d'énergie électrique
US11965702B1 (en) * 2022-10-21 2024-04-23 Amulaire Thermal Technology, Inc. Low pressure drop automotive liquid-cooling heat dissipation plate and enclosed automotive liquid-cooling cooler having the same
CN115831893A (zh) * 2022-12-06 2023-03-21 扬州国扬电子有限公司 一种高效散热电力电子模块散热装置
US20240328726A1 (en) * 2023-03-31 2024-10-03 Champ Tech Optical (Foshan) Corporation Cooling panel and cooling device
DE102023210040A1 (de) * 2023-10-13 2025-04-17 Vitesco Technologies Germany Gmbh Leistungselektronik-Kühler zur Kühlung einer Leistungselektronikvorrichtung, Leistungselektronikvorrichtung und Inverter
WO2025078156A1 (fr) * 2023-10-13 2025-04-17 Schaeffler Technologies AG & Co. KG Refroidisseur d'électronique de puissance destiné à refroidir un dispositif d'électronique de puissance, dispositif d'électronique de puissance et onduleur

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