WO2013118869A1 - Semiconductor cooling device - Google Patents
Semiconductor cooling device Download PDFInfo
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- WO2013118869A1 WO2013118869A1 PCT/JP2013/053061 JP2013053061W WO2013118869A1 WO 2013118869 A1 WO2013118869 A1 WO 2013118869A1 JP 2013053061 W JP2013053061 W JP 2013053061W WO 2013118869 A1 WO2013118869 A1 WO 2013118869A1
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- refrigerant passage
- fins
- refrigerant
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a semiconductor cooling device for cooling a plurality of semiconductor elements.
- cooling fins attached to the semiconductor elements are cooled by a refrigerant so that the operating semiconductor elements do not exceed an allowable temperature.
- the cooling fin protrudes in alignment with the refrigerant passage through which the refrigerant flows. The heat generated by the semiconductor element is transmitted to the fins and removed by heat exchange between the fins and the refrigerant flowing around. In this way, the semiconductor element is cooled.
- the temperature of the refrigerant flowing through the refrigerant passage rises due to heat exchange with the fins.
- the amount of heat removed from each fin becomes smaller as it goes downstream of the refrigerant passage.
- the semiconductor element located in the upstream portion of the refrigerant passage reduces the temperature by 20 degrees by heat exchange with the refrigerant, whereas the semiconductor element located in the downstream portion of the refrigerant passage is caused by heat exchange with the refrigerant.
- the phenomenon of reducing the temperature only by 10 degrees appears. In other words, the cooling capacity of the fin becomes lower in the downstream portion of the refrigerant passage. For this reason, the cooling efficiency of the semiconductor element in which the fin is located downstream of the refrigerant passage is deteriorated.
- JP4600052B issued by the Japan Patent Office in order to eliminate such variations in the cooling of the semiconductor elements due to the position of the fins in the refrigerant passage, so that all the semiconductor elements can exchange heat with the refrigerant at the same temperature. It has been proposed to form a refrigerant passage in a manifold shape.
- An object of the present invention is to uniformly cool a plurality of semiconductor elements under a simpler configuration.
- a semiconductor cooling device includes a refrigerant passage through which a refrigerant flows, a plurality of semiconductor elements disposed outside the refrigerant passage, and a refrigerant passage for transferring heat of the semiconductor elements to the refrigerant. And a mechanism for circulating the refrigerant in the refrigerant passage. Furthermore, the arrangement density or surface area of the plurality of fins is increased from the upstream side to the downstream side of the refrigerant passage.
- FIG. 1 is a longitudinal sectional view of a semiconductor cooling device according to a first embodiment of the present invention.
- FIG. 2 is a schematic exploded perspective view of the semiconductor cooling device.
- FIG. 3A and 3B are a plan view and a longitudinal sectional view of a fin provided in the semiconductor cooling device.
- FIG. 4A and 4B are a plan view and a longitudinal sectional view of a fin according to the second embodiment of the present invention.
- FIG. 5A and 5B are shown in FIGS. Fig. 4 shows a third embodiment of the invention similar to 4A and 4B.
- a semiconductor cooling device 1 according to a first embodiment of the present invention includes a water jacket 3 having a coolant passage 2 formed therein.
- a plurality of semiconductor elements 5 are arranged outside the water jacket 3.
- a large number of fins 6 are coupled to each semiconductor element 5 via the substrate 4.
- the substrate 4 constitutes a part of the wall surface of the water jacket 3.
- an inlet 2A and an outlet 2B of the refrigerant passage 2 are formed.
- a cooling water circulation device 8 including a cooling water pump and a cooling water tank for temporarily storing cooling water is connected to the inlet 2A and the outlet 2B.
- the fins 6 that protrude into the refrigerant passage 2 are formed in a columnar shape with a constant diameter, and are arranged in the refrigerant passage 2 with a constant density.
- the projecting length of the fin 6 to the refrigerant passage 2 is set so as to be shorter toward the upstream of the refrigerant passage 2 and to be longer as it goes downstream of the refrigerant passage 2.
- the refrigerant passage 2 is formed so as to maintain a uniform cross section, in other words, a constant width and depth.
- the refrigerant flowing through the refrigerant passage 2 flows down while exchanging heat with the fins 6.
- the temperature of the refrigerant rises due to heat exchange with the fins 6. Therefore, the temperature of the refrigerant increases as going downstream. As the refrigerant temperature increases, heat exchange between the refrigerant and the fins 6 is less likely to occur.
- the amount of heat removal depends on the surface area of the fins 6. The larger the surface area of the fin 6, the larger the amount of heat removal, and the heat exchange between the refrigerant and the fin 6 is promoted.
- the semiconductor cooling device 1 a decrease in the amount of heat removed from the fins 6 due to a rise in the refrigerant temperature is compensated by an increase in the length of the fins 6. As a result, the amount of heat removed from each fin 6 is averaged. Therefore, the semiconductor element 5 can be cooled under the same conditions upstream and downstream of the refrigerant passage 2, and all the semiconductor elements 5 can be uniformly cooled.
- the present invention can be easily implemented only by changing the length of the fins 6. Furthermore, since the refrigerant passage 2 itself is formed in a uniform cross section and does not require any special arrangement, the present invention can be applied to a water jacket 3 similar to a conventional semiconductor cooling device.
- FIG. 1 A second embodiment of the present invention will be described with reference to 4A and 4B.
- the configuration of the water jacket 3 is the same as that of the first embodiment.
- the arrangement density of the fins 6 is constant as in the first embodiment.
- the difference from the first embodiment is that the fins 6 have a uniform length, while their cross-sectional area is changed according to the position in the refrigerant passage 2.
- the fins 6 are formed in a cylindrical shape, and the diameter of the fins 6 is set so that the diameter of the fins 6 is small upstream of the refrigerant passage 2 and the diameter of the fins 6 increases toward the downstream of the refrigerant passage 2.
- the surface area of the fins 6 increases as the temperature decreases downstream of the refrigerant passage 2, and the amount of heat removed from the fins 6 of the refrigerant also increases. It is possible to compensate for the phenomenon that the refrigerant temperature rises and the heat removal amount decreases as it goes downstream of the refrigerant passage 2, and the heat removal amount from each fin 6 can be averaged. Therefore, also in this embodiment, the semiconductor element 5 can be cooled under the same conditions upstream and downstream of the refrigerant passage 2, and all the semiconductor elements 5 can be uniformly cooled.
- the present invention can be easily implemented only by changing the diameter of the fin 6. Further, like the first embodiment, the refrigerant passage 2 itself does not require any special arrangement. Furthermore, the present invention can also be applied to a water jacket 3 similar to a conventional semiconductor cooling device.
- the fins 6 are cylindrical, but the cross-sectional shape of the fins 6 may be any shape. In short, the cross sectional dimension of the fin 6 may be changed so that the cross sectional area of the fin 6 increases as it goes downstream of the refrigerant passage 2.
- FIG. 1 A third embodiment of the present invention will be described with reference to 5A and 5B.
- the configuration of the water jacket 3 is the same as that of the first embodiment.
- the thickness of the fin 6 is uniform as in the first embodiment.
- the difference from the first embodiment is that the fins 6 have a uniform length, while the arrangement density is changed according to the position in the refrigerant passage 2. That is, the arrangement density of the fins 6 is sparse upstream of the refrigerant passage 2, and the arrangement of the fins 6 is made closer to the downstream of the refrigerant passage 2.
- the number of fins 6 increases and the amount of heat removal per unit area increases as it goes downstream of the refrigerant passage 2.
- the phenomenon in which the amount of heat removed from the fins 6 decreases as the refrigerant temperature rises and goes downstream of the refrigerant passage 2 can be compensated thereby, and the amount of heat removed from each semiconductor element 5 can be averaged. Therefore, also in this embodiment, the semiconductor element 5 can be efficiently cooled without causing variations in position.
- the refrigerant passage 2 itself does not require any special arrangement.
- the present invention can be easily implemented only by changing the arrangement density of the fins 6.
- the present invention can also be applied to a water jacket 3 similar to a conventional semiconductor cooling device.
- the present invention increases the arrangement density or surface area of the plurality of fins 6 protruding into the refrigerant passage 2 from the upstream side to the downstream side of the refrigerant passage 2. Therefore, the heat removal amount per unit area of the refrigerant passage 2 increases toward the downstream side of the refrigerant passage 2. As a result, the temperature of the refrigerant rises as it goes downstream of the refrigerant passage 2 to compensate for the phenomenon that the amount of heat removed from the fins 6 decreases, and all the semiconductor elements 5 are uniformly cooled under equal cooling conditions. be able to.
- the refrigerant passage 2 is formed in a uniform cross section for convenience of explanation.
- the cross-sectional area of the refrigerant passage 2 is sufficiently large and the influence of changes in the diameter, length, and density of the fins 6 on the change in the flow velocity of the refrigerant is small, the refrigerant passage 2 is formed in a uniform cross section in this way. Even so, uniform cooling of all the semiconductor elements 5 can be realized.
- the cross-section of the refrigerant passage 2 should be designed so that the refrigerant flow rate is constant. Is also preferable. While making the cross section of the refrigerant passage 2 uniform, the change in the diameter, length, and density of the fins 6 and the influence of the resulting change in the flow velocity of the refrigerant on the heat removal amount are obtained by calculation or simulation. In consideration of the above, it is also preferable to determine the specifications of the fin 6 so that the final cooling efficiency is constant in order to achieve uniform cooling of the semiconductor element 5.
- the semiconductor cooling device according to the present invention can uniformly cool a plurality of semiconductor elements with a simple configuration. Therefore, a favorable effect can be expected as a semiconductor cooling device for mounting on a vehicle with a limited installation space and severe temperature change.
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Abstract
Description
この発明は、複数の半導体素子を冷却する半導体冷却装置に関する。 The present invention relates to a semiconductor cooling device for cooling a plurality of semiconductor elements.
複数の半導体素子を有する半導体機器においては、例えば稼働中の半導体素子が許容温度を超えないように、半導体素子に付設された冷却用フィンを、冷媒により冷却している。冷却用フィンは冷媒の流れる冷媒通路に整列状態で突出する。半導体素子の発熱はフィンに伝達され、フィンと周囲を流れる冷媒との熱交換により除去される。このようにして、半導体素子の冷却が行なわれる。 In a semiconductor device having a plurality of semiconductor elements, for example, cooling fins attached to the semiconductor elements are cooled by a refrigerant so that the operating semiconductor elements do not exceed an allowable temperature. The cooling fin protrudes in alignment with the refrigerant passage through which the refrigerant flows. The heat generated by the semiconductor element is transmitted to the fins and removed by heat exchange between the fins and the refrigerant flowing around. In this way, the semiconductor element is cooled.
冷媒通路を流れる冷媒の温度はフィンとの熱交換により上昇する。結果として個々のフィンからの抜熱量は、冷媒通路の下流に行くにつれて小さくなる。その結果、例えば、冷媒通路の上流部に位置する半導体素子は冷媒との熱交換により温度を２０度低下させるのに対して、冷媒通路の下流部に位置する半導体素子は冷媒との熱交換により温度を１０度しか低下させないという現象が現れる。言い換えれば、冷媒通路の下流部ほどフィンの冷却能力が低くなる。そのため、冷媒通路の下流にフィンが位置する半導体素子は冷却効率が悪くなる。 The temperature of the refrigerant flowing through the refrigerant passage rises due to heat exchange with the fins. As a result, the amount of heat removed from each fin becomes smaller as it goes downstream of the refrigerant passage. As a result, for example, the semiconductor element located in the upstream portion of the refrigerant passage reduces the temperature by 20 degrees by heat exchange with the refrigerant, whereas the semiconductor element located in the downstream portion of the refrigerant passage is caused by heat exchange with the refrigerant. The phenomenon of reducing the temperature only by 10 degrees appears. In other words, the cooling capacity of the fin becomes lower in the downstream portion of the refrigerant passage. For this reason, the cooling efficiency of the semiconductor element in which the fin is located downstream of the refrigerant passage is deteriorated.
冷媒通路内のフィンの位置に起因する半導体素子の冷却のこのようなばらつきを解消すべく、日本国特許庁が発行したＪＰ４６０００５２Ｂは、すべての半導体素子が同一温度の冷媒と熱交換できるように、冷媒通路をマニホールド状に形成することを提案している。 JP4600052B issued by the Japan Patent Office in order to eliminate such variations in the cooling of the semiconductor elements due to the position of the fins in the refrigerant passage, so that all the semiconductor elements can exchange heat with the refrigerant at the same temperature. It has been proposed to form a refrigerant passage in a manifold shape.
この従来技術によれば、すべての半導体素子の冷却を同一温度の冷媒で行なうことが可能となり、半導体素子の冷却のばらつき解消に好ましい効果が得られる。 According to this prior art, it becomes possible to cool all the semiconductor elements with the refrigerant having the same temperature, and a favorable effect can be obtained for eliminating variations in cooling of the semiconductor elements.
しかしながら、すべての半導体に個別に冷媒を供給するために、半導体素子と同数の冷媒通路が必要となる。そのため、冷却装置の通路構成が複雑化し、冷媒通路の総延長が長くなることは避けられない。 However, in order to supply the coolant individually to all semiconductors, the same number of coolant passages as the semiconductor elements are required. Therefore, the passage configuration of the cooling device is complicated, and the total extension of the refrigerant passage is unavoidable.
この発明の目的は、より簡易な構成のもとで複数の半導体素子を一様に冷却することである。 An object of the present invention is to uniformly cool a plurality of semiconductor elements under a simpler configuration.
以上の目的を達成するために、この発明による半導体冷却装置は、冷媒の流れる冷媒通路と、冷媒通路の外側に配置された複数の半導体素子と、半導体素子の熱を冷媒に伝達すべく冷媒通路の流れの中に配置された複数のフィンと、冷媒通路に冷媒を循環させる機構と、を備えている。さらに、複数のフィンの配置密度または表面積を、冷媒通路の上流から下流に向けて増大させている。 In order to achieve the above object, a semiconductor cooling device according to the present invention includes a refrigerant passage through which a refrigerant flows, a plurality of semiconductor elements disposed outside the refrigerant passage, and a refrigerant passage for transferring heat of the semiconductor elements to the refrigerant. And a mechanism for circulating the refrigerant in the refrigerant passage. Furthermore, the arrangement density or surface area of the plurality of fins is increased from the upstream side to the downstream side of the refrigerant passage.
この発明の詳細並びに他の特徴や利点は、明細書の以下の記載の中で説明されるとともに、添付された図面に示される。 DETAILED DESCRIPTION Details and other features and advantages of the present invention are described in the following description of the specification and shown in the accompanying drawings.
図面のＦＩＧＳ．１と２を参照すると、この発明の第１の実施形態による半導体冷却装置１は、内部に冷媒通路２を形成したウォータジャケット３を備える。
Figure of the drawing. 1 and 2, a
ウォータジャケット３の外側には複数の半導体素子５が配置される。各半導体素子５には基板４を介して数多くのフィン６が結合する。基板４はウォータジャケット３の壁面の一部を構成する。
A plurality of
ウォータジャケット３には冷媒通路２の入口２Ａと出口２Ｂが形成される。冷媒通路２に冷媒を循環させる手段として、冷却水ポンプや冷却水を一時的に貯留する冷却水タンクを含む冷却水循環装置８が、入口２Ａと出口２Ｂに接続される。
In the
ＦＩＧＳ．３Ａと３Ｂを参照すると、冷媒通路２内に突出するフィン６は一定の径の円柱状に形成され、冷媒通路２内に一定の密度で配置される。一方、フィン６の冷媒通路２への突出長さは、冷媒通路２の上流ほど短く、冷媒通路２の下流に行くにつれて長くなるように設定される。なお、フィン６が突出する領域において、冷媒通路２は一様な横断面、言い換えれば一定の幅と深さ、を保つように形成される。
Fig. Referring to 3A and 3B, the
フィン６の冷媒通路２への突出長さを、冷媒通路２の上流から下流に向けて徐々に長くすることは次の意味をもつ。
It is as follows to make the protrusion length of the
冷媒通路２を流れる冷媒はフィン６との熱交換を行ないつつ流下する。冷媒の温度はフィン６との熱交換により上昇する。したがって、下流に行くほど冷媒の温度は高くなる。冷媒温度が高くなるにつれて、冷媒とフィン６との熱交換が起こりにくくなる。
The refrigerant flowing through the
一方、抜熱量はフィン６の表面積に依存する。フィン６の表面積が大きいほど、抜熱量は大きくなり、冷媒とフィン６との熱交換が促進される。
On the other hand, the amount of heat removal depends on the surface area of the
つまり、この半導体冷却装置１においては、冷媒の温度上昇によるフィン６からの抜熱量の低下が、フィン６の長さの増加により補償される。結果として、各フィン６からの抜熱量が平均化される。したがって、冷媒通路２の上流と下流とで半導体素子５の冷却を同条件で行なうことができ、すべての半導体素子５を均一に冷却することができる。
That is, in the
また、この半導体冷却装置１によれば、フィン６の長さを変えるのみで、容易にこの発明を実施できる。さらに、冷媒通路２自体は一様な横断面に形成され、格別のアレンジを必要としないので、従来の半導体冷却装置と同様のウォータジャケット３にもこの発明を適用可能である。
Further, according to the
ＦＩＧＳ．４Ａと４Ｂを参照して、この発明の第２の実施形態を説明する。 Fig. A second embodiment of the present invention will be described with reference to 4A and 4B.
この実施形態においても、ウォータジャケット３の構成は第１の実施形態と同一である。フィン６の配置密度は、第１の実施形態と同様に一定である。第１の実施形態と異なるのは、フィン６を均一の長さとする一方、その断面積を冷媒通路２内の位置に応じて変化させる点である。具体的には、フィン６を円柱状に形成し、冷媒通路２の上流ではフィン６の径が細く、冷媒通路２の下流に行くにつれてフィン６の径が太くなるように、フィン６の径を設定する。
Also in this embodiment, the configuration of the
この実施形態によっても、冷媒通路２の下流に行くほど、フィン６の表面積が増大し、冷媒のフィン６からの抜熱量も増大する。冷媒通路２の下流に行くにつれて、冷媒温度が上昇し、抜熱量が低下する現象をこれにより補償し、各フィン６からの抜熱量を平均化することができる。したがって、この実施形態によっても、冷媒通路２の上流と下流とで半導体素子５の冷却を同条件で行なうことができ、すべての半導体素子５を均一に冷却することができる。
Also in this embodiment, the surface area of the
この実施形態によれば、フィン６の径を変えるのみで、容易にこの発明を実施できる。また、第１の実施形態と同様に、冷媒通路２自体は格別のアレンジを必要としない。さらに、従来の半導体冷却装置と同様のウォータジャケット３にもこの発明を適用可能である。
According to this embodiment, the present invention can be easily implemented only by changing the diameter of the
なお、この実施形態では、フィン６を円柱状としているが、フィン６の断面形状はいかなる形でも良い。要は、フィン６の断面積が冷媒通路２の下流に行くにつれて増大するようにフィン６の横断面の寸法を変化させれば良い。
In this embodiment, the
ＦＩＧＳ．５Ａと５Ｂを参照して、この発明の第３の実施形態を説明する。 Fig. A third embodiment of the present invention will be described with reference to 5A and 5B.
この実施形態においても、ウォータジャケット３の構成は第１の実施形態と同一である。フィン６の太さは第１の実施形態と同様に均一である。第１の実施形態と異なるのは、フィン６を均一の長さとすする一方、その配置密度を冷媒通路２内の位置に応じて変化させる点である。すなわち、冷媒通路２の上流では、フィン６の配置密度は疎であり、冷媒通路２の下流に行くにつれてフィン６の配置を密にする。
Also in this embodiment, the configuration of the
この実施形態によれば、冷媒通路２の下流に行くほど、フィン６の数が増加し、単位面積当たりの抜熱量が増大する。冷媒温度が上昇し、冷媒通路２の下流に行くほどフィン６からの抜熱量が低下する現象を、これにより補償して各半導体素子５からの抜熱量を平均化することができる。したがって、この実施形態においても、半導体素子５の冷却を、位置によるばらつきを生じることなく、効率的に行なうことができる。
According to this embodiment, the number of
この実施形態も第１の実施形態と同様に、冷媒通路２自体は格別のアレンジを必要としない。フィン６の配置密度を変えるのみで、容易にこの発明を実施できる。また、従来の半導体冷却装置と同様のウォータジャケット３にもこの発明を適用可能である。
In this embodiment, like the first embodiment, the
以上のように、この発明は、冷媒通路２内に突出する複数のフィン６の配置密度または表面積を冷媒通路２の上流から下流に向けて増大させている。そのため、冷媒通路２の下流ほど、冷媒通路２の単位面積当たりの抜熱量が増大する。その結果、冷媒通路２の下流に行くにつれて、冷媒温度が上昇し、フィン６からの抜熱量が低下する現象を補償して、すべての半導体素子５を等しい冷却条件のもとで均一に冷却することができる。
As described above, the present invention increases the arrangement density or surface area of the plurality of
以上の説明に関して２０１２年２月９日を出願日とする日本国における特願２０１２－２６０１７号、の内容をここに引用により合体する。 Regarding the above description, the contents of Japanese Patent Application No. 2012-26017 in Japan, filed on February 9, 2012, are incorporated herein by reference.
以上、この発明をいくつかの特定の実施例を通じて説明してきたが、この発明は上記の各実施例に限定されるものではない。当業者にとっては、クレームの技術範囲でこれらの実施例にさまざまな修正あるいは変更を加えることが可能である。 Although the present invention has been described through some specific embodiments, the present invention is not limited to the above embodiments. Those skilled in the art can make various modifications or changes to these embodiments within the scope of the claims.
以上の各実施形態では、説明の都合上、冷媒通路２を一様な横断面に形成している。冷媒通路２の断面積が十分に大きく、フィン６の径、長さ、密度の変化が冷媒の流速変化に及ぼす影響が小さい場合には、このように冷媒通路２を一様な横断面に形成しても、すべての半導体素子５の均一な冷却を実現することができる。
In each of the above embodiments, the
一方、フィン６の径、長さ、密度の変化により、冷媒通路２の冷媒の流通断面積が大きく変化する場合には、冷媒の流速が一定となるように冷媒通路の横断面を設計することも好ましい。冷媒通路２の横断面を一様とする一方で、フィン６の径、長さ、密度、の変化と、その結果生じる冷媒の流速変化が抜熱量に及ぼす影響とを計算あるいはシミュレーションにより求め、これらを総合的に考慮して、最終的な冷却効率が一定となるように、フィン６の仕様を決定することも半導体素子５の均一な冷却を実現するうえで好ましい。
On the other hand, when the flow cross-sectional area of the refrigerant in the
あるいは、冷媒通路２の下流側で冷媒の流速を意図的に増加させて下流側のフィンからの抜熱量を増やし、冷媒通路２の下流側のフィン６の冷却能力をさらに高めることも可能である。
Alternatively, it is possible to intentionally increase the flow rate of the refrigerant on the downstream side of the
以上のように、この発明による半導体冷却装置は簡易な構成のもとで複数の半導体素子を一様に冷却することができる。したがって、設置スペースが限定され、かつ温度変化の厳しい車両搭載用の半導体の冷却装置として好ましい効果を期待できる。 As described above, the semiconductor cooling device according to the present invention can uniformly cool a plurality of semiconductor elements with a simple configuration. Therefore, a favorable effect can be expected as a semiconductor cooling device for mounting on a vehicle with a limited installation space and severe temperature change.
この発明の実施例が包含する排他的性質あるいは特長は以下のようにクレームされる。 The exclusive properties or features included in the embodiments of the present invention are claimed as follows.
Claims (6)
冷媒通路の外側に配置された複数の半導体素子と；
半導体素子の熱を冷媒に伝達すべく冷媒通路の冷媒の流れの中に配置された複数のフィンと；
冷媒通路に冷媒を循環させる手段と；
を備え、
複数のフィンの配置密度または表面積が、冷媒通路の上流から下流に向けて増大する、半導体冷却装置。 A refrigerant passage through which the refrigerant flows;
A plurality of semiconductor elements disposed outside the refrigerant passage;
A plurality of fins disposed in the refrigerant flow in the refrigerant passage to transfer heat of the semiconductor element to the refrigerant;
Means for circulating the refrigerant in the refrigerant passage;
With
A semiconductor cooling device in which the arrangement density or surface area of a plurality of fins increases from upstream to downstream of the refrigerant passage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012026017A JP2013165097A (en) | 2012-02-09 | 2012-02-09 | Semiconductor cooling device |
| JP2012-026017 | 2012-02-09 |
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| WO2013118869A1 true WO2013118869A1 (en) | 2013-08-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2013/053061 Ceased WO2013118869A1 (en) | 2012-02-09 | 2013-02-08 | Semiconductor cooling device |
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| JP (1) | JP2013165097A (en) |
| WO (1) | WO2013118869A1 (en) |
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| WO2018116653A1 (en) * | 2016-12-20 | 2018-06-28 | 富士電機株式会社 | Semiconductor module |
| EP3306659A4 (en) * | 2015-06-03 | 2019-06-19 | Mitsubishi Electric Corporation | LIQUID COOLING COOLER, AND METHOD FOR MANUFACTURING RADIATOR FIN IN LIQUID COOLING COOLER |
| US20190393133A1 (en) * | 2017-03-16 | 2019-12-26 | Mitsubishi Electric Corporation | Cooling system |
| CN110864578A (en) * | 2019-12-02 | 2020-03-06 | 西安热工研究院有限公司 | Variable-section airfoil-shaped efficient heat exchange channel for supercritical carbon dioxide PCHE |
| WO2020224856A1 (en) * | 2019-05-03 | 2020-11-12 | Siemens Aktiengesellschaft | Cooling of heat sources arranged in series in a coolant flow |
| WO2021249680A1 (en) * | 2020-06-08 | 2021-12-16 | Magna powertrain gmbh & co kg | Electrical power module |
| CN115831893A (en) * | 2022-12-06 | 2023-03-21 | 扬州国扬电子有限公司 | High-efficient heat dissipation power electronic module heat abstractor |
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| CN110864578A (en) * | 2019-12-02 | 2020-03-06 | 西安热工研究院有限公司 | Variable-section airfoil-shaped efficient heat exchange channel for supercritical carbon dioxide PCHE |
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| US11965702B1 (en) * | 2022-10-21 | 2024-04-23 | Amulaire Thermal Technology, Inc. | Low pressure drop automotive liquid-cooling heat dissipation plate and enclosed automotive liquid-cooling cooler having the same |
| CN115831893A (en) * | 2022-12-06 | 2023-03-21 | 扬州国扬电子有限公司 | High-efficient heat dissipation power electronic module heat abstractor |
| US20240328726A1 (en) * | 2023-03-31 | 2024-10-03 | Champ Tech Optical (Foshan) Corporation | Cooling panel and cooling device |
| DE102023210040A1 (en) * | 2023-10-13 | 2025-04-17 | Vitesco Technologies Germany Gmbh | Power electronics cooler for cooling a power electronics device, power electronics device and inverter |
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