EP3454367A4 - Module semi-conducteur - Google Patents

Module semi-conducteur Download PDF

Info

Publication number: EP3454367A4
Authority: EP; European Patent Office
Prior art keywords: semiconductor module; semiconductor; module
Prior art date: 2016-12-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP17885013.7A

Other languages

German (de)

English (en)

Other versions

EP3454367B1 (fr

EP3454367A1 (fr

Inventor

Akio Kitamura

Shinichiro Adachi

Nobuhide ARAI

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fuji Electric Co Ltd

Original Assignee

Fuji Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-12-20

Filing date

2017-11-01

Publication date

2019-07-17

2017-11-01 Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd

2019-03-13 Publication of EP3454367A1 publication Critical patent/EP3454367A1/fr

2019-07-17 Publication of EP3454367A4 publication Critical patent/EP3454367A4/fr

2021-08-25 Application granted granted Critical

2021-08-25 Publication of EP3454367B1 publication Critical patent/EP3454367B1/fr

Status Active legal-status Critical Current

2037-11-01 Anticipated expiration legal-status Critical

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Chemical & Material Sciences (AREA)
Ceramic Engineering (AREA)
Materials Engineering (AREA)
Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

EP17885013.7A 2016-12-20 2017-11-01 Module semi-conducteur Active EP3454367B1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2016246597		2016-12-20
PCT/JP2017/039642 WO2018116653A1 (fr)	2016-12-20	2017-11-01	Module semi-conducteur

Publications (3)

Publication Number	Publication Date
EP3454367A1 EP3454367A1 (fr)	2019-03-13
EP3454367A4 true EP3454367A4 (fr)	2019-07-17
EP3454367B1 EP3454367B1 (fr)	2021-08-25

Family

ID=62626211

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP17885013.7A Active EP3454367B1 (fr)	2016-12-20	2017-11-01	Module semi-conducteur

Country Status (5)

Country	Link
US (1)	US10756001B2 (fr)
EP (1)	EP3454367B1 (fr)
JP (1)	JP6645590B2 (fr)
CN (1)	CN109219880B (fr)
WO (1)	WO2018116653A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7086512B2 (ja) *	2019-07-05	2022-06-20	三菱電機株式会社	サーボアンプ
JP7459539B2 (ja) *	2020-02-07	2024-04-02	富士電機株式会社	半導体装置
JP7291290B2 (ja) *	2020-03-31	2023-06-14	マレリ株式会社	冷却装置
JP7347404B2 (ja) *	2020-11-30	2023-09-20	株式会社デンソー	電力変換装置
JP6984778B1 (ja) *	2021-05-20	2021-12-22	富士電機株式会社	冷却装置および冷却装置を備える半導体装置
JP2023023518A (ja) *	2021-08-05	2023-02-16	日本電産株式会社	液冷ジャケット、および冷却装置
JP2023154856A (ja) *	2022-04-08	2023-10-20	ニデック株式会社	液冷ジャケット、および冷却装置
JP7747596B2 (ja) *	2022-09-05	2025-10-01	フタバ産業株式会社	冷却器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20010014029A1 (en) *	2000-02-16	2001-08-16	Osamu Suzuki	Power inverter
US20120250253A1 (en) *	2010-01-08	2012-10-04	Toyota Jidosha Kabushiki Kaisha	Semiconductor module
WO2013118869A1 (fr) *	2012-02-09	2013-08-15	日産自動車株式会社	Dispositif de refroidissement de semiconducteurs
US20140091453A1 (en) *	2012-10-02	2014-04-03	Kabushiki Kaisha Toyota Jidoshokki	Cooling device and semiconductor device
WO2016194158A1 (fr) *	2015-06-03	2016-12-08	三菱電機株式会社	Refroidisseur à refroidissement par liquide, et procédé de fabrication d'ailette de radiateur dans un refroidisseur à refroidissement par liquide

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Publication number	Priority date	Publication date	Assignee	Title
JP3982180B2 (ja) *	2000-02-16	2007-09-26	株式会社日立製作所	電力変換装置
JP2002141164A (ja)	2000-10-31	2002-05-17	Miyaden Co Ltd	大電力高周波誘導加熱用トランジスタインバータ装置
JP2003188326A (ja) *	2001-12-20	2003-07-04	Hitachi Ltd	冷却装置付電気機器
JP4789813B2 (ja)	2007-01-11	2011-10-12	トヨタ自動車株式会社	半導体素子の冷却構造
JP4777264B2 (ja) *	2007-01-11	2011-09-21	株式会社ティラド	フィンタイプ液冷ヒートシンク
JP4920071B2 (ja) *	2009-11-12	2012-04-18	株式会社日本自動車部品総合研究所	半導体素子の冷却装置
JP5900506B2 (ja) *	2011-10-12	2016-04-06	富士電機株式会社	半導体モジュール用冷却器及び半導体モジュール
JP2013197483A (ja) *	2012-03-22	2013-09-30	Ihi Corp	冷却装置
JP6026808B2 (ja)	2012-08-03	2016-11-16	株式会社ティラド	積層型ヒートシンクのコア
CN104247009A (zh) *	2012-09-19	2014-12-24	富士电机株式会社	半导体装置以及半导体装置的制造方法
WO2014168913A1 (fr) *	2013-04-08	2014-10-16	Nuodb, Inc.	Système de gestion de bases de données à hibernation et éclatement de bases de données
CN105408997B (zh) *	2013-09-04	2018-05-08	三菱电机株式会社	半导体模块以及逆变器装置
JP2015073012A (ja) *	2013-10-03	2015-04-16	富士電機株式会社	半導体装置
US10214109B2 (en) *	2013-11-28	2019-02-26	Fuji Electric Co., Ltd.	Method for manufacturing cooler for semiconductor-module, cooler for semiconductor-module, semiconductor-module and electrically-driven vehicle

2017
- 2017-11-01 EP EP17885013.7A patent/EP3454367B1/fr active Active
- 2017-11-01 WO PCT/JP2017/039642 patent/WO2018116653A1/fr not_active Ceased
- 2017-11-01 CN CN201780034425.6A patent/CN109219880B/zh active Active
- 2017-11-01 JP JP2018557590A patent/JP6645590B2/ja active Active
2018
- 2018-11-28 US US16/202,093 patent/US10756001B2/en active Active

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20010014029A1 (en) *	2000-02-16	2001-08-16	Osamu Suzuki	Power inverter
US20120250253A1 (en) *	2010-01-08	2012-10-04	Toyota Jidosha Kabushiki Kaisha	Semiconductor module
WO2013118869A1 (fr) *	2012-02-09	2013-08-15	日産自動車株式会社	Dispositif de refroidissement de semiconducteurs
US20140091453A1 (en) *	2012-10-02	2014-04-03	Kabushiki Kaisha Toyota Jidoshokki	Cooling device and semiconductor device
WO2016194158A1 (fr) *	2015-06-03	2016-12-08	三菱電機株式会社	Refroidisseur à refroidissement par liquide, et procédé de fabrication d'ailette de radiateur dans un refroidisseur à refroidissement par liquide
EP3306659A1 (fr) *	2015-06-03	2018-04-11	Mitsubishi Electric Corporation	Refroidisseur à refroidissement par liquide, et procédé de fabrication d'ailette de radiateur dans un refroidisseur à refroidissement par liquide

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2018116653A1 *

Also Published As

Publication number	Publication date
EP3454367B1 (fr)	2021-08-25
CN109219880B (zh)	2022-06-14
JPWO2018116653A1 (ja)	2019-04-04
US10756001B2 (en)	2020-08-25
WO2018116653A1 (fr)	2018-06-28
JP6645590B2 (ja)	2020-02-14
CN109219880A (zh)	2019-01-15
EP3454367A1 (fr)	2019-03-13
US20190148265A1 (en)	2019-05-16

Publication	Publication Date	Title
EP3660899A4 (fr)	2020-06-03	Module semi-conducteur
EP3629379A4 (fr)	2020-12-23	Dispositif semi-conducteur à base de ga2o3
EP3107120C0 (fr)	2023-08-30	Module semi-conducteur de puissance
EP3561886A4 (fr)	2020-09-02	Dispositif semiconducteur
DK3402947T3 (da)	2021-07-12	Modultelt
EP3454367A4 (fr)	2019-07-17	Module semi-conducteur
EP3410477A4 (fr)	2019-09-11	Module à semi-conducteurs
DK3485205T3 (da)	2020-11-30	Kølemodul
DE102018212047A8 (de)	2019-08-29	Halbleitermodul
EP3576166A4 (fr)	2020-12-16	Dispositif à semiconducteur
EP3410476A4 (fr)	2019-09-11	Module à semi-conducteurs
KR102410398B9 (ko)	2023-03-23	열전모듈
EP3608972A4 (fr)	2020-12-16	Dispositif semiconducteur
DE112015002796A5 (de)	2017-03-02	Optoelektronischer Halbleiterchip
DE112017004053A5 (de)	2019-04-25	Optoelektronischer Halbleiterchip
DE112017002987A5 (de)	2019-02-21	Optoelektronisches halbleiterbauelement
EP3780099A4 (fr)	2021-05-12	Module semi-conducteur
IL263411A (en)	2018-12-31	Secured chip
EP3654385A4 (fr)	2020-11-18	Dispositif à semi-conducteurs
EP3550592A4 (fr)	2020-08-05	Substrat semiconducteur
DE102017110821A8 (de)	2018-09-13	Halbleitervorrichtung
EP3425660A4 (fr)	2019-07-31	Dispositif à semi-conducteur
EP3442033A4 (fr)	2019-05-08	Module solaire
EP3616244A4 (fr)	2021-02-17	Nanocristaux semi-conducteurs
EP3605593A4 (fr)	2020-04-08	Dispositif semiconducteur

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