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WO2013039349A2 - Cellule solaire et son procédé de fabrication - Google Patents

Cellule solaire et son procédé de fabrication Download PDF

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Publication number
WO2013039349A2
WO2013039349A2 PCT/KR2012/007370 KR2012007370W WO2013039349A2 WO 2013039349 A2 WO2013039349 A2 WO 2013039349A2 KR 2012007370 W KR2012007370 W KR 2012007370W WO 2013039349 A2 WO2013039349 A2 WO 2013039349A2
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WO
WIPO (PCT)
Prior art keywords
nano
solar cell
alloy
metal
light absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/007370
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English (en)
Other versions
WO2013039349A3 (fr
Inventor
Chin Woo Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of WO2013039349A2 publication Critical patent/WO2013039349A2/fr
Publication of WO2013039349A3 publication Critical patent/WO2013039349A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/45—Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the embodiment relates to a solar cell and a method of fabricating the same.
  • a CIGS-based solar cell which is a PN hetero junction apparatus having a substrate structure including a glass substrate, a metallic back electrode layer, a P type CIGS-based light absorbing layer, a high resistance buffer layer, and an N type window layer, has been extensively used.
  • the embodiment provides a solar cell which has improved photoelectric conversion efficiency and durability.
  • a solar cell including a back electrode layer on a support substrate; a light absorbing layer on the back electrode layer; nano-alloy protrusions formed on the light absorbing layer, and including a first metal and a second metal; and a front electrode covering the light absorbing layer and the nano-alloy protrusions.
  • a method for fabricating a solar cell including the steps of forming a back electrode layer on a support substrate; forming a light absorbing layer on the back electrode layer; forming nano-alloy protrusions on the light absorbing layer; and forming a front electrode layer on the light absorbing layer and the nano-alloy protrusions.
  • nano-alloy protrusions are provided between a light absorbing layer and a front electrode layer.
  • the nano-alloy protrusions can change a path of light incident from the sun to the solar cell. That is, the nano-alloy protrusions can reduce the amount of the incident light reflected from the front electrode layer and can induce the incident light to the light absorbing layer. Accordingly, an amount of light induced into the light absorbing layer is increased so that the solar cell may have improved photoelectric conversion efficiency. That is, the solar cell according to the embodiment can efficiently absorb light incident from solar energy so that the photoelectric conversion efficiency can be improved.
  • the nano-alloy protrusions may include a metallic material having excellent electric properties. Accordingly, electric conductivity and photoelectric conversion efficiency in the solar cell including the nano-alloy protrusions can be improved as compared with a solar cell including only a front electrode layer according to the related art. Moreover, formation of the front electrode layer is easily and a deposited thickness of the front electrode layer can be reduced by laminating the nano-alloy protrusions on the light absorbing layer.
  • nano-alloy protrusions can be improved as compared with that of metal protrusions. Accordingly, the durability of the solar cell including the nano-alloy protrusions can be improved.
  • FIGS. 1 to 3 are sectional views showing a section of a solar cell according to the embodiment.
  • FIGS. 4 to 8 are sectional views showing a method of fabricating a solar cell according to the embodiment.
  • nano-alloy protrusion refers to at least one region having a size less than about 500 nm, for example, about 100 nm, about 50 nm, about 10 nm, or about 5 nm or a structure having a specified size.
  • the “nano-alloy protrusion” includes a nano-wire, a nano-rod, a nano-dot, a quantum dot, and a nano-particle.
  • a “nano-alloy protrusion” according to one embodiment may be substantially homogenous or heterogeneous (for instance, hetero structure) in terms of material characteristics.
  • FIGS. 1 to 3 are sectional views showing a section of a solar cell according to the embodiment.
  • the solar cell includes a support substrate 100, a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, nano-alloy protrusions 600, and a front electrode layer 700.
  • the support substrate 100 has a plate shape and supports the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, the high-resistance buffer layer 500, the nano-alloy protrusions 600, and the front electrode layer 700.
  • the support substrate 100 may be transparent, and may be rigid or flexible.
  • the support substrate 100 may be an insulator.
  • the support substrate 100 may be a glass substrate, a plastic substrate or a metal substrate.
  • the support substrate 100 may be a soda lime glass substrate.
  • the support substrate 100 may include a ceramic substrate including alumina, stainless steel, or polymer having a flexible property.
  • the back electrode layer 200 is provided on the support substrate 100.
  • the back electrode layer 200 is a conductive layer.
  • the back electrode layer 200 may include one selected from the group consisting of molybdenum (Mo), gold (Au), aluminum (Al), chrome (Cr), tungsten (W), and copper (Cu).
  • Mo molybdenum
  • Au gold
  • Al aluminum
  • Cr chrome
  • W tungsten
  • Cu copper
  • the Mo since the molybdenum (Mo) makes a less thermal expansion coefficient with the support substrate 100 when comparing with other elements, the Mo represents a superior adhesive property to prevent the delamination phenomenon and generally satisfies characteristics required in the back electrode layer 200.
  • the back electrode layer 200 may include two or more layers. In this case, respective layers may be formed by the same metal or different metals.
  • the light absorbing layer 300 is provided on the back electrode layer 200.
  • the light absorbing layer 300 includes a group I-III-VI compound.
  • the light absorbing layer 300 may have the CIGSS (Cu(IN,Ga)(Se,S)2) crystal structure, the CISS (Cu(IN)(Se,S)2) crystal structure or the CGSS (Cu(Ga)(Se,S)2) crystal structure.
  • the buffer layer 400 is provided on the light absorbing layer 300.
  • the buffer layer 400 may include CdS, ZnS, InXSY or InXSeYZn(O, OH).
  • the buffer layer 400 may have a thickness in the range of about 50 nm to about 150 nm.
  • the energy bandgap of the buffer layer 400 may be in the range of about 2.2eV to about 2.4eV.
  • the high resistance buffer layer 500 is provided on the buffer layer 400.
  • the high resistance buffer layer 500 includes i-ZnO which is not doped with impurities.
  • the energy bandgap of the high resistance buffer layer 500 may be in the range of about 3.1eV to about 3.3eV.
  • the high resistance buffer layer 500 may be omitted.
  • the nano-alloy protrusions 600 are provided on the light absorbing layer 300.
  • the nano-alloy protrusions 600 may be provided between the light absorbing layer 300 and the front electrode layer 700.
  • the nano-alloy protrusions 600 may directly make contact with the high resistance buffer layer on the light absorbing layer 300.
  • the nano-alloy protrusions 600 may include a metallic material having excellent electric properties. Accordingly, electric conductivity and photoelectric conversion efficiency in the solar cell according to the embodiment can be improved as compared with a solar cell including only a front electrode layer according to the related art.
  • the nano-alloy protrusions 600 may improve the photoelectric conversion efficiency and reduce a thickness of the front electrode layer 700. That is, the nano-alloy protrusions 600 having excellent electric conductivity may be used as an electrode so that the front electrode layer 700 may have a thinner thickness.
  • the nano-alloy protrusions 600 include a first metal and a second metal.
  • the first metal may include zinc (Zn), silver (Ag), gold (Au), palladium (Pd), platinum (Pt), calcium (Ca), chrome (Cr), iron (Fe), Nickel (Ni), copper (Cu), molybdenum (Mo), ruthenium (Ru), titanium (Ti), or tungsten (W).
  • the second metal may include a group III element.
  • the second metal may include boron (B), aluminum (Al), gallium (Ga), indium (In), or thallium (TI).
  • the nano-alloy protrusions 600 may be a zinc-aluminum alloy.
  • the nano-alloy protrusions 600 and the front electrode layer 700 may include at least identical metal.
  • the nano-alloy protrusions 600 may include a zinc (Zn)-aluminum (Al) alloy and the front electrode layer 700 may include aluminum (Al) doped zinc oxide (AZO). That is, each of the nano-alloy protrusions 600 and the front electrode layer 700 may include zinc (Zn) in common, but the embodiment is not limited thereto.
  • the nano-alloy protrusions 600 may include various forms such as nano-dot (see, FIG. 1), nano-wire, nano-rod, nano-tube, and nano-roughness (FIG. 3).
  • the nano-alloy protrusions 600 may be optionally arranged.
  • the nano-alloy protrusions may be regularly aligned or irregularly arranged.
  • nano-rod used in the specification includes a nano-structure having a main axis longer than one axis of a nano-rod section.
  • the nano-alloy protrusions 600 may have the aspect ratio of about 1.5 to about 10, but the embodiment is not limited thereto.
  • the “nano-wire” includes a longer nano-rod, for example, a nano-structure having the aspect ratio greater than 10.
  • the nano-alloy protrusions may be spaced apart from each other.
  • the nano-alloy protrusions 600 may be structures which are integrally connected to each other as illustrated in FIG. 3.
  • the nano-alloy protrusions 600 may be a nano-roughness structure.
  • the nano-alloy protrusions 600 may change a path of light incident from the sun to the solar cell. That is, the nano-alloy protrusions 600 may reduce the amount of incident light reflected from the front electrode layer 700 and induce the reflected light to the light absorbing layer 300. Accordingly, an amount of the light induced into the light absorbing layer 300 is increased and accordingly the solar cell may have improved photoelectric conversion efficiency. That is, the solar cell according to the embodiment may have improved photoelectric conversion efficiency by efficiently absorbing light incident from solar energy by the nano-alloy protrusions 600.
  • the deposition rate of the front electrode layer 700 can be increased so that the front electrode layer 700 can be easily formed.
  • the front electrode layer 70 may be provided on the light absorbing layer 300.
  • the front electrode layer 700 may directly make contact with the high resistance buffer layer 50 on the light absorbing layer 300.
  • the front electrode layer 700 may cover the high resistance buffer layer 500 and the nano-alloy protrusions 600.
  • the front electrode layer 700 may include a transparent conductive material.
  • the front electrode layer 700 may have the characteristics of an N type semiconductor.
  • the front electrode layer 700 forms an N type semiconductor with the buffer layer 30 to make PN junction with the light absorbing layer 400 serving as a P type semiconductor layer.
  • the front electrode layer 700 may include aluminum (Al) doped zinc oxide (AZO).
  • the front electrode layer 700 may have a thickness in the range of about 100 nm to about 500 nm. In detail, the front electrode layer 700 may have a thickness in the range of about 100 nm to about 300 nm. The thickness of the front electrode layer 700 may be reduced by providing the nano-alloy protrusions 600 on the high resistance buffer layer 500.
  • FIGS. 4 to 8 are sectional views showing a method of fabricating a solar cell according to the embodiment. A description of the method of fabricating the solar cell will be based on the foregoing description of the solar cell. The foregoing description of the solar cell may be incorporated herein by reference.
  • the back electrode layer 200 may be formed on the support substrate 100.
  • the back electrode layer 200 may be deposited using molybdenum (Mo).
  • Mo molybdenum
  • the back electrode layer 200 may be formed by physical vapor deposition (PVD) or a plating method.
  • An additional layer such as a diffusion barrier layer may be interposed between the support substrate 100 and the back electrode layer 200.
  • the light absorbing player 300 may be formed on the back electrode layer 200.
  • the light absorbing layer 300 is formed by a method of forming a CIGSS (Cu(IN,Ga)(Se,S)2) light absorbing layer 300 while simultaneously or separately evaporating copper (Cu), indium (In), gallium (Ga), and Selenium (Se) and a method of performing a solemnization process after formation of a metal precursor layer.
  • CIGSS Cu(IN,Ga)(Se,S)2
  • the metal precursor layer is formed on the back electrode 200 by performing a sputtering process using a copper (Cu) target, an indium (In) target, and a gallium (Ga) target.
  • the metal precursor layer is subject to the selenization process so that the CIGSS (Cu(IN,Ga)(Se,S)2) light absorbing layer 300 is formed.
  • a sputtering process using the copper target, the indium target, and the gallium target and the solemnization process may be simultaneously performed.
  • a CIS or CIG light absorbing layer 300 may be formed by sputtering process using only the copper target and the indium target or only the copper target or the gallium target and the solemnization process.
  • a buffer layer 40 and a high resistance buffer layer 500 are sequentially formed on the light absorbing layer 300.
  • the buffer layer 400 may be formed by depositing cadmium sulfide on the light absorbing layer 30 through chemical bath deposition (CBD).
  • CBD chemical bath deposition
  • zinc oxide is deposited on the buffer layer 400 through a sputtering process and then the high resistance buffer layer 500 on the deposited zinc oxide.
  • the nano-alloy protrusions 600 are formed on the light absorbing layer 300.
  • the nano-alloy protrusions 600 may directly make contact with the high resistance buffer layer 500 on the light absorbing layer 300.
  • the nano-alloy protrusions 600 may be formed by various processes.
  • the nano-alloy protrusions 600 may be fabricated through electroplating, a roll to roll process, a sol-gel process, vacuum evaporation, spray pyrolysis, or a combination thereof.
  • the zinc-aluminum alloy protrusions 700 may be fabricated by vacuum plating of forming zinc-aluminum alloy under vacuum by simultaneously evaporating a zinc source and an aluminum source under vacuum.
  • the zinc source and the aluminum source may use two independent evaporation sources and the vacuum plating may be performed in a vacuum chamber at pressure of about 10-5 Torr.
  • the zinc-alloy protrusions 700 may be formed by an electrolytic plating process.
  • an aqueous zinc nitride solution Zn(NO3)2?xH2O having zinc may be used as a first precursor solution.
  • the aqueous zinc nitride solution may use zinc nitrate hexahydrate.
  • An aqueous aluminum nitride solution Al(NO3)3?xH2O may be used as the second precursor solution.
  • a working electrode and a counter electrode of the working electrode are immersed in the mixing precursor solution.
  • the working electrode may use a composite substrate including the back electrode 200 and the light absorbing layer 300 sequentially provided on the substrate 100.
  • a zinc-aluminum alloy may be formed by applying a voltage the electrodes.
  • the zinc-aluminum alloy may have various shapes other than a shape of a thin film by a bonding force between aluminum and zinc.
  • the zinc-aluminum alloy may include various shapes such as nano-dot, nano-wire, nano-rod, nano-tube, or nano-roughness, but the embodiment is not limited thereto.
  • the front electrode layer 700 is formed on the high resistance buffer layer 500.
  • the front electrode layer 700 covers the high resistance buffer layer 500 and the nano-alloy protrusion 600 on the high resistance buffer layer 500.
  • a transparent conductive material is laminated on the high resistance buffer layer 500.
  • the transparent conductive material may include aluminum (Al) or boron (B) doped zinc oxide.
  • a process of forming the front electrode layer 600 may be performed at a temperature in the range of a room temperature to 300°C.
  • any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire. Une cellule solaire comprend une couche électrode arrière sur un substrat de support; une couche absorbant la lumière sur la couche électrode arrière; des parties saillantes de nano-alliages formées sur la couche absorbant la lumière et comprenant un premier et un second métal; et une électrode avant recouvrant la couche absorbant la lumière et les parties saillantes de nano-alliages.
PCT/KR2012/007370 2011-09-16 2012-09-14 Cellule solaire et son procédé de fabrication Ceased WO2013039349A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110093676A KR20130030122A (ko) 2011-09-16 2011-09-16 태양전지 및 이의 제조방법
KR10-2011-0093676 2011-09-16

Publications (2)

Publication Number Publication Date
WO2013039349A2 true WO2013039349A2 (fr) 2013-03-21
WO2013039349A3 WO2013039349A3 (fr) 2013-05-10

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WO (1) WO2013039349A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456802A (zh) * 2013-09-04 2013-12-18 南开大学 一种用于聚酰亚胺衬底铜铟镓硒薄膜太阳能电池的背电极
CN114759101A (zh) * 2020-12-29 2022-07-15 隆基绿能科技股份有限公司 一种热载流子太阳能电池及光伏组件

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2277045A4 (fr) 2008-04-14 2012-09-19 Bandgap Eng Inc Procédé de fabrication de réseaux de nanofils
CN105047730A (zh) * 2015-06-29 2015-11-11 柳州蚊敌香业有限公司 一种用于聚酰亚胺衬底铜铟镓硒薄膜太阳能电池的背电极

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100009249A (ko) * 2008-07-18 2010-01-27 삼성전자주식회사 태양 전지 및 그 제조 방법
KR100988206B1 (ko) * 2008-12-12 2010-10-18 한양대학교 산학협력단 탄소 나노튜브 복합재료를 이용한 태양 전지 및 그 제조방법
KR101558589B1 (ko) * 2009-06-30 2015-10-07 엘지이노텍 주식회사 태양전지의 제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456802A (zh) * 2013-09-04 2013-12-18 南开大学 一种用于聚酰亚胺衬底铜铟镓硒薄膜太阳能电池的背电极
CN114759101A (zh) * 2020-12-29 2022-07-15 隆基绿能科技股份有限公司 一种热载流子太阳能电池及光伏组件
CN114759101B (zh) * 2020-12-29 2023-08-01 隆基绿能科技股份有限公司 一种热载流子太阳能电池及光伏组件

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WO2013039349A3 (fr) 2013-05-10
KR20130030122A (ko) 2013-03-26

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