[go: up one dir, main page]

WO2013042966A1 - Cellule solaire et son procédé de fabrication - Google Patents

Cellule solaire et son procédé de fabrication Download PDF

Info

Publication number
WO2013042966A1
WO2013042966A1 PCT/KR2012/007558 KR2012007558W WO2013042966A1 WO 2013042966 A1 WO2013042966 A1 WO 2013042966A1 KR 2012007558 W KR2012007558 W KR 2012007558W WO 2013042966 A1 WO2013042966 A1 WO 2013042966A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
light absorbing
electrode layer
absorbing layer
alloy electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/007558
Other languages
English (en)
Inventor
Chin Woo Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of WO2013042966A1 publication Critical patent/WO2013042966A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the embodiment relates to a solar cell and a method of fabricating the same.
  • a solar cell is spotlighted as a pollution-free energy source for solving the future energy problem because it rarely causes environmental pollution and has the semi-permanent life span and there exists infinite resources for the solar cell.
  • Solar cells may be defined as devices to convert light energy into electric energy by using a photovoltaic effect of generating electrons when light is incident onto a P-N junction diode.
  • the solar cell may be classified into a silicon solar cell, a compound semiconductor solar cell mainly including a group I-III-VI compound or a group III-V compound, a dye-sensitized solar cell, and an organic solar cell according to materials constituting the junction diode.
  • a solar cell made from CIGS (CuInGaSe), which is one of group I-III-VI Chalcopyrite-based compound semiconductors, represents superior light absorption, higher photoelectric conversion efficiency with a thin thickness, and superior electro-optic stability, so the CIGS solar cell is spotlighted as a substitute for a conventional silicon solar cell.
  • the CIGS solar cell can be fabricated by sequentially forming a back electrode layer, a light absorbing layer, a buffer layer and a front electrode layer on a glass substrate.
  • the substrate can be prepared by using various materials, such as soda lime glass, stainless steel and polyimide (PI).
  • Molybdenum (Mo) is mainly used as a material for the back electrode layer because the Mo has the low specific resistance and thermal expansion coefficient similar to that of the glass substrate.
  • the light absorbing layer is a P type semiconductor layer and mainly includes CuInSe2 or Cu(InxGa1-x)Se2, which is obtained by replacing a part of In with Ga.
  • the light absorbing layer can be formed through various processes, such as an evaporation process, a sputtering process, a selenization process or an electroplating process.
  • the buffer layer is disposed between the light absorbing layer and the front electrode layer, which represent great difference in lattice coefficient and energy bandgap, to form a superior junction therebetween.
  • the buffer layer mainly includes cadmium sulfide (CdS) prepared through chemical bath deposition (CBD).
  • the front electrode layer is an N type semiconductor layer and forms a PN junction with respect to the light absorbing layer together with the buffer layer.
  • the front electrode layer since the front electrode layer serves as a transparent electrode at a front surface of the solar cell, the front electrode layer mainly includes aluminum-doped zinc oxide (AZO) having the superior light transmittance and electric conductivity.
  • AZO aluminum-doped zinc oxide
  • the embodiment provides a solar cell which can represent improved efficiency and be easily fabricated.
  • a solar cell including an alloy electrode layer provided on a support substrate and including a group I element, a light absorbing layer provided on the alloy electrode layer and representing a high composition with respect to the group I element as the light absorbing layer approaches the alloy electrode layer, and a front electrode layer on the light absorbing layer.
  • a method of fabricating a solar cell which includes forming an alloy electrode layer provided on a support substrate and including a group I element and a first material, forming a first light absorbing layer on the alloy electrode layer, forming a second light absorbing layer by performing heat treatment with respect to the alloy electrode layer and the first light absorbing layer, and forming a front electrode layer on the light absorbing layer.
  • the light absorbing layer can be easily formed.
  • the group I elements constituting the alloy electrode layer are spread into the preliminary light absorbing layer through the heat treatment, thereby easily forming the light absorbing layer including group I-III-VI compounds.
  • the processes can be easily controlled.
  • the light absorbing layer of the solar cell can represent different compositions of group I elements according to locations.
  • the solar cell formed through the method of fabricating the solar cell according to the embodiment can include a light absorbing layer having lower bandgap energy toward the alloy electrode layer.
  • the light absorbing layer can effectively convert the solar light into the electrical energy, and the solar cell according to the embodiment can represent improved efficiency.
  • the alloy electrode layer of the solar cell according to the embodiment includes group I elements. Since the alloy electrode layer includes the group I elements such as copper (Cu), the alloy electrode layer can represent lower resistance, so that the solar cell can represent improved efficiency.
  • the group I elements are provided in the form of the alloy instead of metal, thereby preventing group I-VI impurities, which may be caused in the fabrication process of the solar cell, from being produced.
  • FIGS. 1 and 2 are sectional views showing a solar cell according to embodiments
  • FIGS. 3 and 4 are graphs showing the compositions of group I elements constituting the solar cell according to the embodiments.
  • FIGS. 5 and 9 are sectional views showing a method of fabricating the solar cell according to the embodiment.
  • FIGS. 1 and 2 are sectional views showing a solar cell according to embodiments.
  • the solar cell according to the embodiment includes a support substrate 100, an alloy electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high-resistance buffer layer 500, and a front electrode layer 600.
  • the support substrate 100 has a plate shape, and supports the stepped portion 110, the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, the high-resistance buffer layer 500 and the front electrode layer 600.
  • the support substrate 100 may be transparent and may be rigid or flexible.
  • the support substrate 100 may include an insulator.
  • the support substrate 100 may include a glass substrate, a plastic substrate, or a metallic substrate.
  • the support substrate 100 may include a soda lime glass substrate.
  • the support substrate 100 may include a ceramic substrate including alumina, stainless steel, or polymer representing flexibility.
  • the alloy electrode layer 200 is provided on the support substrate 100.
  • the alloy electrode layer 200 serves as a back electrode layer of the solar cell.
  • the ally electrode layer 200 may have a thickness of about 1 ⁇ m to about 3 ⁇ m.
  • the alloy electrode layer 200 may include group I elements.
  • the group I elements of the alloy electrode layer 200 are spread onto the light absorbing layer 300 in the process of fabricating the solar cell. However, as shown in FIG. 3, a part of the group I elements may remain in the alloy electrode layer 200 without being spread. Alternatively, when all of the group I elements are spread onto the light absorbing layer 300 in the process of fabricating the solar cell, the alloy electrode layer 200 may not include the group I elements as shown in FIG. 4, but the embodiments are not limited thereto.
  • the group I elements may include a material selected from the group consisting of copper (Cu), silver (Ag), gold (Au), and the combination thereof.
  • the group I elements may include only group I elements, the alloy of the group I elements, or the compound of the group I elements.
  • the group I elements may include copper (Cu) or silver (Ag), but the embodiments are not limited thereto.
  • the alloy electrode layer 200 additionally includes a first material.
  • the first material is generally used for an electrode in the art, the first material is available without the specific limitation.
  • the first material may include a material selected from the group consisting of molybdenum (Mo), nickel (Ni), aluminum (Al), chrome (Cr), tungsten (W), palladium (Pd), platinum (Pt), cobalt (Co), tin (Sn), lead (Pb), zinc (Zn), iron (Fe), iridium (Ir), osmium (Os), rhodium (Rh), and the combination thereof.
  • the first material may include both of metal and alloys.
  • the first material may include molybdenum (Mo). Since molybdenum (Mo) represents a thermal expansion coefficient less than that of the support substrate 100, the molybdenum (Mo) can prevent delamination due to a superior adhesion property, and can wholly satisfy the required characteristics.
  • the alloy electrode layer 200 includes the group I elements in the form of the alloy instead of metal. Accordingly, the alloy electrode layer 200 can reduce the reaction between the group I elements and another material, which may occur in the process of fabricating the solar cell. In other words, the alloy electrode layer 200 includes the group I elements in the form of the alloy to represent improved chemical durability. For example, when the back electrode layer includes only the group I elements or only the compound of the group I elements, the group I elements cause side reaction in the process of forming the light absorbing layer 300, so that group I-VI impurities may be produced.
  • the group I-VI impurities may include CuxSey compounds.
  • the light absorbing layer 300 is provided on the alloy electrode layer 200.
  • the light absorbing layer 300 includes group I elements.
  • the group I elements constituting the light absorbing layer 300 may be the same as materials constituting the alloy electrode layer 200.
  • the group I elements constituting the light absorbing layer 300 may be the group I elements spread into the light absorbing layer 300 from the alloy electrode layer 200 in the process of fabricating the solar cell.
  • the light absorbing layer 300 includes group I elements, group III elements, and group VI elements.
  • the light absorbing layer 300 may include group I-III-VI compounds.
  • the light absorbing layer 300 may be made of group I-III-VI compounds.
  • the group I-III-VI compounds include copper-indium-gallium-selenide-based compounds, copper-indium-selenide compounds, copper-gallium-selenide-based compounds, copper-indium-gallium-sulfide-based compounds, copper-indium-sulfide-based compounds, copper-gallium-sulfide-based compounds, copper-indium-gallium-selenium-sulfide-based compounds, silver-indium-gallium-selenide-based compounds, silver-indium-selenide-based compounds, silver-gallium-selenide-based compounds, silver-indium-gallium-selenide-based compounds, silver-indium-gallium-sulfide-based compounds, silver-indium-sulfide-based compounds, silver-gallium-sulfide-based compounds, or silver-indium-gallium-selenium-sulfide-based compounds.
  • the composition of the group I elements constituting the light absorbing layer 300 may be varied depending on the positions of the light absorbing layer 300. In more detail, the composition of the group I elements constituting the light absorbing layer 300 may be more increased as the light absorbing layer 300 approaches the alloy electrode layer 200. In addition, the composition of the group I elements constituting the light absorbing layer 300 may be reduced as the light absorbing layer 300 is farther away from the alloy electrode layer 200.
  • the light absorbing layer 300 includes group I elements representing a lower composition as the height of the light absorbing layer 300 is increased from the support substrate 100.
  • the light absorbing layer 300 may include group I elements representing a higher composition as the height of the light absorbing layer 300 is reduced.
  • the light absorbing layer 300 may include a first region 310 adjacent to the alloy electrode layer 200 and a second region 320 placed on the first region 310.
  • the first region 310 may be provided on the alloy electrode layer 200.
  • the second region 320 may be provided on the first region 210.
  • the first region 310 may include group I-III-VI compounds representing the higher composition with respect to the group I elements
  • the second region 320 may include group I-III-VI compounds representing the lower composition with respect to the group I elements when comparing with that of the first region 310.
  • FIGS. 2 to 4 and the detailed description disclose that the first and second regions 310 and 320 constituting the light absorbing layer 300 are separately formed from each other, the embodiments are not limited thereto.
  • the embodiments include the light absorbing layer 300 representing different compositions for the group I elements between a portion adjacent to the alloy electrode layer 200 and a portion adjacent to the front electrode layer 600 even if the boundary between the first and second regions 310 and 320 is e not clearly defined.
  • the group I elements of the light absorbing layer 300 may represent the highest composition at the interfacial surface between the alloy electrode layer 200 and the light absorbing layer 300.
  • the group I-III-VI compounds of the uppermost surface of the light absorbing layer 300 represent the lowest composition with respect to the group I elements.
  • the alloy electrode layer 200 may include a copper-molybdenum alloy layer
  • the light absorbing layer 300 may include copper-group III-VI-based compounds, copper-indium-gallium-selenide-based compounds, copper-indium-selenide-based compounds, copper-gallium-selenide-based compounds, copper-indium-gallium-sulfide-based compounds, copper-indium-sulfide-based compounds, copper-gallium-sulfide-based compounds, or copper-indium-gallium-selenium-sulfide-based compounds.
  • the copper-group III-VI compounds may be expressed through following formulas.
  • X, Y, and Z are greater than zero and smaller than 2.
  • the light absorbing layer 300 includes copper-group III-VI-based compounds having a higher X value as the light absorbing layer 300 approaches the alloy electrode layer 200.
  • the light absorbing layer 300 includes group copper-III-VI-based compounds having a lower X value as the light absorbing layer 300 is farther away from the alloy electrode layer 200.
  • the X value A at the interfacial surface between the alloy electrode layer 200 and the light absorbing layer 300 may be in the range of about 0.9 to about 1.5.
  • the X value B at the interfacial surface between the light absorbing layer 300 and the buffer layer 400 may be in the range of about 0.5 to about 0.95.
  • the light absorbing layer 300 may include copper-group III-VI-based compounds representing the highest composition with respect to copper at the interfacial surface with the alloy electrode layer 200.
  • the light absorbing layer 300 may include copper-III-VI-based compounds representing the lowest composition with respect to copper at the interfacial surface with the buffer layer 400.
  • the buffer layer 400 is provided on the light absorbing layer 300.
  • the buffer layer 400 includes CdS, ZnS, InXSY, and InXSeYZn (O, OH).
  • the thickness of the buffer layer 400 may be in the range of about 50 nm to about 150 nm, and the energy bandgap of the buffer layer 400 may be in the range of about 2.2 eV to about 2.4 eV.
  • the high resistance buffer layer 500 is provided on the buffer layer 400.
  • the high resistance buffer layer 500 includes i-ZnO which is not doped with impurities.
  • the high-resistance buffer layer 500 may have the energy bandgap in the range of about 3.1eV to about 3.3eV.
  • the high-resistance buffer layer 500 can be omitted.
  • the front electrode layer 600 may be provided on the light absorbing layer 300.
  • the front electrode layer 600 may directly make contact with the high-resistance buffer layer 500 formed on the light absorbing layer 300.
  • the front electrode layer 600 may include a transparent conductive material.
  • the front electrode layer 600 may have the characteristics of an N type semiconductor.
  • the front electrode layer 600 forms an N type semiconductor together with the buffer layer 400 to make a PN junction together with the light absorbing layer 300 serving as a P type semiconductor layer.
  • the front electrode layer 600 may include aluminum-doped zinc oxide (AZO).
  • the front electrode layer 600 may have a thickness in the range of about 100 nm to about 500 nm.
  • FIGS. 5 and 9 are sectional views showing a method of fabricating the solar cell according to the embodiment.
  • the description of the method of fabricating the solar cell according to the present embodiment will be made by making reference to the above description of the solar cell.
  • the above description of the solar cell may be incorporated in the description of the method of fabricating the solar cell according to the present embodiment.
  • the alloy electrode layer 200 including group I elements and a first material is formed on the support substrate 100.
  • the alloy electrode layer 200 may be formed through a physical vapor deposition scheme, a chemical vapor deposition (CVD) scheme, or an atomic layer deposition (ALD) scheme.
  • the alloy electrode layer may be formed through a sputtering process, an electroplating process, a roll-to-roll process, a sol-gel process, or a vacuum evaporation process.
  • the ratio of the group I elements of the alloy electrode layer to the first material is about 0.5 to 1 to about 4:1 according to one embodiment, but the disclosure is not limited thereto.
  • the light absorbing layer 300 is formed on the alloy electrode layer 200.
  • the light absorbing layer 300 may be formed through the steps of forming the first light absorbing layer 310 on the alloy electrode layer 200, and forming the second light absorbing layer 320 by performing heat treatment with respect to the alloy electrode layer 200 and the first light absorbing layer 310.
  • the first light absorbing layer 310 is formed on the alloy electrode layer 200.
  • the first light absorbing layer 310 may serve as a preliminary light absorbing layer 310 used to form the light absorbing layer (or the second light absorbing layer).
  • the first light absorbing layer 310 may include group III elements or group VI elements. In more detail, the first light absorbing layer 310 may include only group III elements. Alternatively, the first light absorbing layer may include group III elements and group VI elements.
  • the first light absorbing layer 310 may include a single layer including group III-VI-based compounds.
  • the first light absorbing layer 310 may include indium-selenide-based compounds, indium-gallium-selenide-based compounds, gallium-selenide-based compounds, indium-sulfide-based compounds, indium-gallium-sulfide-based compounds, gallium-sulfide-based compounds, or indium-gallium-selenium-sulfide-based compounds.
  • the first light absorbing layer 310 may be deposited through a sputtering process.
  • the first light absorbing layer 310 may be formed through the sputtering process using a sputtering target including group III-VI compounds.
  • the first light absorbing layer 310 may be formed through a co-evaporation scheme to simultaneously evaporate and deposit group III elements and group VI elements.
  • the first light absorbing layer 310 may be formed by printing a paste including group III-VI compounds on the alloy electrode layer 200.
  • the first light absorbing layer 310 may be formed by spraying a solution including group III-VI compounds on the ally electrode layer 200.
  • the first light absorbing layer 310 may include only group III elements instead of group VI elements.
  • the first light absorbing layer 310 may include group III elements or compounds including group III elements.
  • the first light absorbing layer 310 may include indium and/or gallium, or may include indium oxide or gallium oxide.
  • the first light absorbing layer 310 may include an indium oxide layer and a gallium oxide layer.
  • the alloy electrode layer 200 and the first light absorbing layer 310 are subject to a heat treatment process.
  • the heat treatment process is performed at the temperature of about 400°C to about 650°C for about 5 minutes to about 60 minutes, but the embodiments are not limited thereto.
  • the group I elements constituting the alloy electrode layer 200 are spread into the first light absorbing layer 310.
  • the first material constituting the alloy electrode layer 200 may be partially spread into the first light absorbing layer 310.
  • the group I elements may be spread faster than that of the first material. Accordingly, the group I elements may be more easily spread into the first light absorbing layer 310 than the first material.
  • the group I elements constituting the alloy electrode layer 200 may react with the group III-VI compounds constituting the first light absorbing layer 310 due to the spread, thereby forming the group I-III-VI compounds.
  • the second light absorbing layer (or light absorbing layer 300) including group I-III-VI compounds is formed on the alloy electrode layer 200.
  • the heat treatment process may be performed at the atmosphere of group VI elements.
  • the first light absorbing layer 310 may include group III elements instead of group VI elements.
  • the first light absorbing layer 310 and the alloy electrode layer 200 are the heat treatment at the atmosphere of group VI elements such as selenium, so that the light absorbing layer may be formed on the alloy electrode layer 200.
  • group I elements constituting the alloy electrode layer 200, the group III elements constituting the first light absorbing layer 310, and the group VI elements around the first light absorbing layer 310 react with each other, thereby forming group I-III-VI compounds, and forming the light absorbing layer 300.
  • the buffer layer 400 and the high resistance buffer layer 500 are formed on the light absorbing layer 300.
  • the buffer layer 400 may be formed by depositing CdS on the light absorbing layer 300 through a chemical bath deposition (CBD) scheme.
  • CBD chemical bath deposition
  • zinc oxide is deposited on the buffer layer 400 through the sputtering process, thereby forming the high resistance buffer layer 500.
  • the front electrode layer 600 is formed on the high resistance buffer layer 500.
  • a transparent conductive material is deposited on the high resistance buffer layer 500.
  • the transparent conductive material may include zinc oxide doped with aluminum (Al) or boron (B).
  • Al aluminum
  • B boron
  • any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire. La cellule solaire selon l'invention comprend une couche électrode en alliage appliquée sur un substrat support et comprenant un élément du groupe I du tableau périodique, une couche d'absorption de lumière disposée sur la couche électrode en alliage et ayant une composition élevée en élément du groupe I à proximité de la couche électrode en alliage, ainsi qu'une couche électrode avant disposée sur la couche d'absorption de lumière.
PCT/KR2012/007558 2011-09-20 2012-09-20 Cellule solaire et son procédé de fabrication Ceased WO2013042966A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110094487A KR101273179B1 (ko) 2011-09-20 2011-09-20 태양전지 및 이의 제조방법
KR10-2011-0094487 2011-09-20

Publications (1)

Publication Number Publication Date
WO2013042966A1 true WO2013042966A1 (fr) 2013-03-28

Family

ID=47914629

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/007558 Ceased WO2013042966A1 (fr) 2011-09-20 2012-09-20 Cellule solaire et son procédé de fabrication

Country Status (2)

Country Link
KR (1) KR101273179B1 (fr)
WO (1) WO2013042966A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9478684B2 (en) 2013-08-01 2016-10-25 Lg Chem, Ltd. Three-layer core-shell nanoparticles for manufacturing solar cell light absorption layer and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224953A (ja) * 1997-12-02 1999-08-17 Ricoh Co Ltd 光起電力装置及びその製造方法
JP2010232608A (ja) * 2009-03-30 2010-10-14 Honda Motor Co Ltd カルコパイライト型太陽電池の製造方法
KR101060180B1 (ko) * 2008-11-25 2011-08-29 한국광기술원 태양전지의 흡수층 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7235736B1 (en) * 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells
KR101153435B1 (ko) * 2008-06-17 2012-06-07 가부시키가이샤 아루박 태양전지 및 그 제조 방법
KR20110013009A (ko) * 2009-07-31 2011-02-09 엘지전자 주식회사 복수의 배면전극층을 가지는 박막 태양전지 및 그의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224953A (ja) * 1997-12-02 1999-08-17 Ricoh Co Ltd 光起電力装置及びその製造方法
KR101060180B1 (ko) * 2008-11-25 2011-08-29 한국광기술원 태양전지의 흡수층 제조방법
JP2010232608A (ja) * 2009-03-30 2010-10-14 Honda Motor Co Ltd カルコパイライト型太陽電池の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9478684B2 (en) 2013-08-01 2016-10-25 Lg Chem, Ltd. Three-layer core-shell nanoparticles for manufacturing solar cell light absorption layer and method of manufacturing the same
TWI588015B (zh) * 2013-08-01 2017-06-21 Ｌｇ化學股份有限公司 用於製造太陽能電池的光吸收層之三層核殼型奈米粒子及彼之製法

Also Published As

Publication number Publication date
KR101273179B1 (ko) 2013-06-17
KR20130030904A (ko) 2013-03-28

Similar Documents

Publication Publication Date Title
WO2013066030A1 (fr) Cellule solaire et son procédé de préparation
WO2013042967A1 (fr) Cellule solaire et son procédé de fabrication
WO2013058540A1 (fr) Appareil de cellule solaire et procédé de fabrication de celui-ci
WO2013069998A1 (fr) Cellule solaire et son procédé de fabrication
WO2012102470A1 (fr) Appareil à pile solaire et son procédé de fabrication
WO2012046935A1 (fr) Cellule solaire
WO2013062298A1 (fr) Cellule solaire et procédé de fabrication de celle-ci
WO2013151313A1 (fr) Appareil à cellules solaires et son procédé de fabrication
WO2013147517A1 (fr) Cellule solaire et procédé de fabrication de celle-ci
WO2013085228A1 (fr) Module de cellules solaires et son procédé de fabrication
WO2013069997A1 (fr) Cellule solaire et son procédé de fabrication
WO2013055005A1 (fr) Cellule solaire et son procédé de préparation
WO2013055008A1 (fr) Cellule solaire et module de cellule solaire
WO2013085372A1 (fr) Module de photopile et son procédé de fabrication
WO2013058459A1 (fr) Module de photopile et son procédé de préparation
WO2013051854A2 (fr) Cellule solaire et module de cellules solaires utilisant celle-ci
WO2013058521A1 (fr) Cellule solaire et procédé de fabrication de celle-ci
WO2012102453A1 (fr) Cellule solaire et procédé de fabrication de celle-ci
WO2013081344A1 (fr) Module de cellules solaires et son procédé de fabrication
WO2013042966A1 (fr) Cellule solaire et son procédé de fabrication
WO2013058611A1 (fr) Cellule solaire et procédé de fabrication de celle-ci
WO2012102452A1 (fr) Cellule solaire et procédé de fabrication
WO2013019000A2 (fr) Cellule solaire et module de cellule solaire qui utilise cette dernière
WO2013094936A1 (fr) Cellule solaire et son procédé de fabrication
WO2013081346A1 (fr) Module de cellules solaires et son procédé de fabrication

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12834389

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12834389

Country of ref document: EP

Kind code of ref document: A1