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WO2013039349A3 - Cellule solaire et son procédé de fabrication - Google Patents

Cellule solaire et son procédé de fabrication Download PDF

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Publication number
WO2013039349A3
WO2013039349A3 PCT/KR2012/007370 KR2012007370W WO2013039349A3 WO 2013039349 A3 WO2013039349 A3 WO 2013039349A3 KR 2012007370 W KR2012007370 W KR 2012007370W WO 2013039349 A3 WO2013039349 A3 WO 2013039349A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
fabricating
same
light absorbing
absorbing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/007370
Other languages
English (en)
Other versions
WO2013039349A2 (fr
Inventor
Chin Woo Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of WO2013039349A2 publication Critical patent/WO2013039349A2/fr
Publication of WO2013039349A3 publication Critical patent/WO2013039349A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/45—Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire. Une cellule solaire comprend une couche électrode arrière sur un substrat de support; une couche absorbant la lumière sur la couche électrode arrière; des parties saillantes de nano-alliages formées sur la couche absorbant la lumière et comprenant un premier et un second métal; et une électrode avant recouvrant la couche absorbant la lumière et les parties saillantes de nano-alliages.
PCT/KR2012/007370 2011-09-16 2012-09-14 Cellule solaire et son procédé de fabrication Ceased WO2013039349A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110093676A KR20130030122A (ko) 2011-09-16 2011-09-16 태양전지 및 이의 제조방법
KR10-2011-0093676 2011-09-16

Publications (2)

Publication Number Publication Date
WO2013039349A2 WO2013039349A2 (fr) 2013-03-21
WO2013039349A3 true WO2013039349A3 (fr) 2013-05-10

Family

ID=47883890

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/007370 Ceased WO2013039349A2 (fr) 2011-09-16 2012-09-14 Cellule solaire et son procédé de fabrication

Country Status (2)

Country Link
KR (1) KR20130030122A (fr)
WO (1) WO2013039349A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105047730A (zh) * 2015-06-29 2015-11-11 柳州蚊敌香业有限公司 一种用于聚酰亚胺衬底铜铟镓硒薄膜太阳能电池的背电极

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2277045A4 (fr) 2008-04-14 2012-09-19 Bandgap Eng Inc Procédé de fabrication de réseaux de nanofils
CN103456802B (zh) * 2013-09-04 2015-09-09 南开大学 一种用于聚酰亚胺衬底铜铟镓硒薄膜太阳能电池的背电极
CN114759101B (zh) * 2020-12-29 2023-08-01 隆基绿能科技股份有限公司 一种热载流子太阳能电池及光伏组件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100009249A (ko) * 2008-07-18 2010-01-27 삼성전자주식회사 태양 전지 및 그 제조 방법
KR20100068019A (ko) * 2008-12-12 2010-06-22 한양대학교 산학협력단 탄소 나노튜브 복합재료를 이용한 태양 전지 및 그 제조방법
KR20110001734A (ko) * 2009-06-30 2011-01-06 엘지이노텍 주식회사 태양전지의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100009249A (ko) * 2008-07-18 2010-01-27 삼성전자주식회사 태양 전지 및 그 제조 방법
KR20100068019A (ko) * 2008-12-12 2010-06-22 한양대학교 산학협력단 탄소 나노튜브 복합재료를 이용한 태양 전지 및 그 제조방법
KR20110001734A (ko) * 2009-06-30 2011-01-06 엘지이노텍 주식회사 태양전지의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105047730A (zh) * 2015-06-29 2015-11-11 柳州蚊敌香业有限公司 一种用于聚酰亚胺衬底铜铟镓硒薄膜太阳能电池的背电极

Also Published As

Publication number Publication date
WO2013039349A2 (fr) 2013-03-21
KR20130030122A (ko) 2013-03-26

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