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WO2011136570A3 - Apparatus and method for manufacturing silicon nanopowder - Google Patents

Apparatus and method for manufacturing silicon nanopowder Download PDF

Info

Publication number
WO2011136570A3
WO2011136570A3 PCT/KR2011/003110 KR2011003110W WO2011136570A3 WO 2011136570 A3 WO2011136570 A3 WO 2011136570A3 KR 2011003110 W KR2011003110 W KR 2011003110W WO 2011136570 A3 WO2011136570 A3 WO 2011136570A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
gas
manufacturing silicon
particles
silicon nanopowder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/003110
Other languages
French (fr)
Korean (ko)
Other versions
WO2011136570A2 (en
Inventor
홍순일
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEST CORP
Original Assignee
NEST CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEST CORP filed Critical NEST CORP
Publication of WO2011136570A2 publication Critical patent/WO2011136570A2/en
Publication of WO2011136570A3 publication Critical patent/WO2011136570A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0875—Gas
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

The present invention relates to an apparatus and method for manufacturing silicon nanopowder. The present invention relates to an apparatus and method for manufacturing silicon nanopowder, characterized in that the apparatus comprises: a synthesis container having a space therein; a plasma-gas-feeding part enabling plasma gas to be fed into the synthesis container; a plasma antenna supplying power in order to convert plasma gas into plasma; a plasma-gas-feeding part enabling silicon process gas to be fed into the synthesis container; a baffle having a plurality of apertures through which particles, produced by the decomposition of the silicon process gas by means of the plasma, pass; and a stage in which a substrate, on which crystalline particles are formed by combining the particles passing through the baffle, is fixed.
PCT/KR2011/003110 2010-04-30 2011-04-27 Apparatus and method for manufacturing silicon nanopowder Ceased WO2011136570A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0041089 2010-04-30
KR1020100041089A KR101240422B1 (en) 2010-04-30 2010-04-30 Method and Apparatus for Manufacturing Nano-sized Silicon Powder

Publications (2)

Publication Number Publication Date
WO2011136570A2 WO2011136570A2 (en) 2011-11-03
WO2011136570A3 true WO2011136570A3 (en) 2012-04-12

Family

ID=44862054

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/003110 Ceased WO2011136570A2 (en) 2010-04-30 2011-04-27 Apparatus and method for manufacturing silicon nanopowder

Country Status (2)

Country Link
KR (1) KR101240422B1 (en)
WO (1) WO2011136570A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101320969B1 (en) * 2012-02-08 2013-10-29 주식회사 정화나노엔지니어링 Apparatus for manufacturing nano-sized powder
KR101436409B1 (en) * 2013-01-11 2014-09-01 후성정공 주식회사 Composite Gas Generator for Nano-composit Materials
US9802826B2 (en) * 2013-11-25 2017-10-31 Korea Institute Of Energy Research Apparatus for producing silicon nanoparticle using inductive coupled plasma
CN108910889B (en) * 2018-07-16 2020-04-28 新疆泰宇达环保科技有限公司 Implementation method for improving metal silicon processing efficiency
KR102833123B1 (en) * 2023-02-06 2025-07-11 한국표준과학연구원 Apparatus and Method of synthesizing, focusing and collecting nanoparticles using plasma

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007262541A (en) * 2006-03-29 2007-10-11 Ihi Corp Microcrystalline silicon film forming method and solar cell
KR20090022572A (en) * 2007-08-31 2009-03-04 최대규 Inductively Coupled Plasma Reactor with Multiple Radio Frequency Antennas
WO2009057469A1 (en) * 2007-10-30 2009-05-07 Nissin Electric Co., Ltd. Method for forming silicon dots
US20090130337A1 (en) * 2006-10-12 2009-05-21 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007262541A (en) * 2006-03-29 2007-10-11 Ihi Corp Microcrystalline silicon film forming method and solar cell
US20090130337A1 (en) * 2006-10-12 2009-05-21 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
KR20090022572A (en) * 2007-08-31 2009-03-04 최대규 Inductively Coupled Plasma Reactor with Multiple Radio Frequency Antennas
WO2009057469A1 (en) * 2007-10-30 2009-05-07 Nissin Electric Co., Ltd. Method for forming silicon dots

Also Published As

Publication number Publication date
KR101240422B1 (en) 2013-03-08
KR20110121484A (en) 2011-11-07
WO2011136570A2 (en) 2011-11-03

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