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WO2011136570A3 - Appareil et procédé de fabrication de nanopoudre de silicium - Google Patents

Appareil et procédé de fabrication de nanopoudre de silicium Download PDF

Info

Publication number
WO2011136570A3
WO2011136570A3 PCT/KR2011/003110 KR2011003110W WO2011136570A3 WO 2011136570 A3 WO2011136570 A3 WO 2011136570A3 KR 2011003110 W KR2011003110 W KR 2011003110W WO 2011136570 A3 WO2011136570 A3 WO 2011136570A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
gas
manufacturing silicon
particles
silicon nanopowder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/003110
Other languages
English (en)
Korean (ko)
Other versions
WO2011136570A2 (fr
Inventor
홍순일
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEST CORP
Original Assignee
NEST CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEST CORP filed Critical NEST CORP
Publication of WO2011136570A2 publication Critical patent/WO2011136570A2/fr
Publication of WO2011136570A3 publication Critical patent/WO2011136570A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0875—Gas
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

La présente invention concerne un appareil et un procédé de fabrication de nanopoudre de silicium. La présente invention concerne un appareil et un procédé de fabrication de nanopoudre de silicium, caractérisés en ce que l'appareil comprend : un récipient de synthèse ayant un espace intérieur; une partie d'alimentation de gaz plasma permettant au gaz plasma d'être amené dans le récipient de synthèse; une antenne de plasma amenant l'énergie pour convertir le gaz plasma en plasma; une partie d'alimentation de gaz plasma permettant au gaz de procédé de silicium d'être amené dans le récipient de synthèse; un baffle ayant une pluralité d'ouvertures à travers lesquelles les particules, produites par la décomposition du gaz de procédé de silicium au moyen du plasma, passent; et un étage dans lequel un substrat, sur lequel des particules cristallines sont formées en combinant les particules passant à travers le baffle, est fixé.
PCT/KR2011/003110 2010-04-30 2011-04-27 Appareil et procédé de fabrication de nanopoudre de silicium Ceased WO2011136570A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0041089 2010-04-30
KR1020100041089A KR101240422B1 (ko) 2010-04-30 2010-04-30 실리콘 나노분말 제조장치 및 방법

Publications (2)

Publication Number Publication Date
WO2011136570A2 WO2011136570A2 (fr) 2011-11-03
WO2011136570A3 true WO2011136570A3 (fr) 2012-04-12

Family

ID=44862054

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/003110 Ceased WO2011136570A2 (fr) 2010-04-30 2011-04-27 Appareil et procédé de fabrication de nanopoudre de silicium

Country Status (2)

Country Link
KR (1) KR101240422B1 (fr)
WO (1) WO2011136570A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101320969B1 (ko) * 2012-02-08 2013-10-29 주식회사 정화나노엔지니어링 나노 입자 제조 장치
KR101436409B1 (ko) * 2013-01-11 2014-09-01 후성정공 주식회사 나노복합소재 제조용 복합 가스 제조장치
US9802826B2 (en) * 2013-11-25 2017-10-31 Korea Institute Of Energy Research Apparatus for producing silicon nanoparticle using inductive coupled plasma
CN108910889B (zh) * 2018-07-16 2020-04-28 新疆泰宇达环保科技有限公司 提高金属硅加工效率的实现方法
KR102833123B1 (ko) * 2023-02-06 2025-07-11 한국표준과학연구원 플라즈마를 이용한 나노입자 합성, 집속 및 수집 장치 및 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007262541A (ja) * 2006-03-29 2007-10-11 Ihi Corp 微結晶シリコン膜形成方法及び太陽電池
KR20090022572A (ko) * 2007-08-31 2009-03-04 최대규 다중 무선 주파수 안테나를 갖는 유도 결합 플라즈마반응기
WO2009057469A1 (fr) * 2007-10-30 2009-05-07 Nissin Electric Co., Ltd. Procédé de formation de points de silicium
US20090130337A1 (en) * 2006-10-12 2009-05-21 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007262541A (ja) * 2006-03-29 2007-10-11 Ihi Corp 微結晶シリコン膜形成方法及び太陽電池
US20090130337A1 (en) * 2006-10-12 2009-05-21 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
KR20090022572A (ko) * 2007-08-31 2009-03-04 최대규 다중 무선 주파수 안테나를 갖는 유도 결합 플라즈마반응기
WO2009057469A1 (fr) * 2007-10-30 2009-05-07 Nissin Electric Co., Ltd. Procédé de formation de points de silicium

Also Published As

Publication number Publication date
KR101240422B1 (ko) 2013-03-08
KR20110121484A (ko) 2011-11-07
WO2011136570A2 (fr) 2011-11-03

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